TWI771920B - An apparatus for detecting internal defects in an electronic component and method thereof - Google Patents
An apparatus for detecting internal defects in an electronic component and method thereof Download PDFInfo
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- TWI771920B TWI771920B TW110106043A TW110106043A TWI771920B TW I771920 B TWI771920 B TW I771920B TW 110106043 A TW110106043 A TW 110106043A TW 110106043 A TW110106043 A TW 110106043A TW I771920 B TWI771920 B TW I771920B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8812—Diffuse illumination, e.g. "sky"
- G01N2021/8816—Diffuse illumination, e.g. "sky" by using multiple sources, e.g. LEDs
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8854—Grading and classifying of flaws
- G01N2021/8867—Grading and classifying of flaws using sequentially two or more inspection runs, e.g. coarse and fine, or detecting then analysing
- G01N2021/887—Grading and classifying of flaws using sequentially two or more inspection runs, e.g. coarse and fine, or detecting then analysing the measurements made in two or more directions, angles, positions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
Abstract
Description
本發明涉及一種用於檢測電子元件中的內部缺陷的裝置和方法，該裝置和方法包括：面向所述電子元件的第一表面的成像單元，其中所述第一表面包括所述電子元件的凸出側；至少一個紅外線光源，其能夠照亮由雷射開槽製程引起的內部缺陷，例如所述電子元件的微裂紋或內部裂紋；所述紅外線光源和所述電子元件相對於它們各自的水平面傾斜0°至90°的角度。 The present invention relates to an apparatus and method for detecting internal defects in an electronic component, the apparatus and method comprising: an imaging unit facing a first surface of the electronic component, wherein the first surface comprises convex surfaces of the electronic component exit side; at least one infrared light source capable of illuminating internal defects caused by the laser grooving process, such as micro-cracks or internal cracks of the electronic component; the infrared light source and the electronic component with respect to their respective horizontal planes Tilt at an angle of 0° to 90°.
晶圓切割是任何半導體積體電路(IC)生產基地的重要製程，它是將單個半導體晶粒與晶圓分開的切割製程，因此可以透過機械切割製程或雷射開槽製程來完成該切割製程。眾所周知，與使用刀片的傳統機械鋸切製程相比，雷射開槽技術是最先進的技術。儘管如此，雷射開槽製程會引起半導體晶粒的微裂紋或內部裂紋，並導致低產能。半導體晶粒的側壁紅外線(IR)檢查無法檢查由雷射開槽引起的內部缺陷，而紅外線表面檢查將難以識別背景和缺陷之間的灰度差值。 Wafer dicing is an important process for any semiconductor integrated circuit (IC) production base, it is a dicing process that separates individual semiconductor dies from wafers, so the dicing process can be done by either a mechanical dicing process or a laser grooving process . Laser grooving is known to be the most advanced technology compared to traditional mechanical sawing processes using blades. Nonetheless, the laser grooving process can cause micro-cracks or internal cracks in the semiconductor die and result in low yields. Sidewall infrared (IR) inspection of semiconductor dies cannot detect internal defects caused by laser grooving, while infrared surface inspection will have difficulty identifying grayscale differences between background and defects.
Kvung Beom Kim於KR101234603B1公開了一種使用拉曼散射進行表面缺陷檢查的裝置。被檢體表面缺陷的檢查裝置包括：被檢體安裝於其上的安放部；一光源單元，其投射拉曼雷射光至被檢體；一光檢測 器，用於檢測被檢體散射的散射光；以及用以判斷是否存在缺陷以及缺陷的類型的一缺陷判斷單元，其電性連接到光檢測器，並從檢測到的散射光測量拉曼光譜和拉曼位移量，並將測得的拉曼位移量與為每種缺陷類型預先設定的多個判斷缺陷的拉曼位移量進行比較。此發明還提供一種使用拉曼散射檢查樣本表面缺陷的方法。但是，KR101234603B1存在一些限制，因為它僅用於表面缺陷檢查，並且不能檢測半導體器件內部缺陷的存在與否。 Kvung Beom Kim disclosed an apparatus for surface defect inspection using Raman scattering in KR101234603B1. An inspection device for surface defects of an object to be inspected includes: a mounting portion on which the object to be inspected is mounted; a light source unit that projects Raman laser light to the object to be inspected; a light detection a detector for detecting scattered light scattered by the object to be inspected; and a defect judgment unit for judging whether a defect exists and the type of the defect, which is electrically connected to the photodetector and measures the Raman spectrum from the detected scattered light and Raman shifts, and compare the measured Raman shifts with the Raman shifts of multiple judgment defects preset for each defect type. The invention also provides a method of inspecting surface defects of a sample using Raman scattering. However, KR101234603B1 has some limitations as it is only used for surface defect inspection and cannot detect the presence or absence of internal defects in semiconductor devices.
除了KR101234603B1以外，Wack等人於US6818459B2中公開了一種判斷宏觀缺陷是否存在的方法和系統。該系統可以包括被配置為支撐樣本並耦合到測量裝置的一平臺。該測量裝置可以包括一照明系統和一檢測系統。該照明系統和該檢測系統可以被配置為使得系統可以被配置為判斷樣本的多種特性。例如，該系統可以被配置為判斷樣本的多種性質，包括但不限於樣本的宏觀缺陷和覆蓋物的存在。以這種方式，測量裝置可以執行多種光學和/或非光學計量和/或檢查技術。該方法遇到了與KR101234603B1一樣的一些缺點，因為該系統和方法用於確定宏觀缺陷的存在，但不包含內部缺陷(例如微裂紋)。 In addition to KR101234603B1, Wack et al in US6818459B2 disclose a method and system for judging the presence or absence of macroscopic defects. The system can include a platform configured to support the sample and coupled to the measurement device. The measuring device may include an illumination system and a detection system. The illumination system and the detection system can be configured such that the system can be configured to determine various characteristics of the sample. For example, the system can be configured to determine a variety of properties of the sample, including but not limited to macroscopic defects and the presence of coverings in the sample. In this way, the measurement device can perform a variety of optical and/or non-optical metrology and/or inspection techniques. This method suffers from some of the same drawbacks as KR101234603B1 because the system and method are used to determine the presence of macroscopic defects, but not internal defects (eg, microcracks).
因此，有利的是，透過具有用於檢測電子元件的內部缺陷(諸如微裂紋或內部裂紋)的裝置和方法來減輕缺點，該裝置和方法透過以不同角度的紅外線燈光投射，以及以不同角度的照相機位置朝向該電子元件，來檢測該電子元件，從而至少一個紅外線光源和該電子元件相對於它們各自的水平面傾斜到0°至90°的角度。 Therefore, it would be advantageous to alleviate the disadvantages by having an apparatus and method for detecting internal defects in electronic components, such as micro-cracks or internal cracks, which transmits infrared light at different angles, and at different angles The camera is positioned towards the electronic component to detect the electronic component so that the at least one infrared light source and the electronic component are inclined to an angle of 0° to 90° with respect to their respective horizontal planes.
因此，本發明的主要目的是提供一種，透過以不同角度的紅外線燈光投射以及不同角度的攝像頭位置朝向電子元件，來實現用於檢測電子元件中的微裂紋或內部裂紋內部缺陷的裝置和方法。 Therefore, the main purpose of the present invention is to provide a device and method for detecting micro-cracks or internal cracks in electronic components by projecting infrared light at different angles and facing the electronic components with different angles of camera positions.
本發明的又一個目的是提供一種用於檢測電子元件中的內部缺陷的裝置和方法，其中該裝置和方法能夠拍攝內部缺陷的圖像，且此圖像具有最少的雜訊。 Yet another object of the present invention is to provide an apparatus and method for detecting internal defects in electronic components, wherein the apparatus and method are capable of capturing images of internal defects with minimal noise.
本發明的又一個目的是提供一種用於檢測電子元件中的內部缺陷的裝置和方法，藉此該裝置和方法能夠提高生產能力。 Yet another object of the present invention is to provide an apparatus and method for detecting internal defects in electronic components, whereby the apparatus and method can increase the productivity.
本發明的又一個目的是提供一種用於檢測電子元件中的內部缺陷的裝置和方法，其中該方法能夠更精確和更準確無誤地檢測和檢查微裂紋。 Yet another object of the present invention is to provide an apparatus and method for detecting internal defects in electronic components, wherein the method enables more precise and more accurate detection and inspection of micro-cracks.
透過理解以下對本發明的詳細描述或在實踐中採用本發明，本發明的其他目的將變得顯而易見。 Other objects of the present invention will become apparent upon understanding the following detailed description of the invention or by employing the invention in practice.
根據本發明的較佳實施例，提供了以下內容：一種用於檢測電子元件中的內部缺陷的裝置包括：一成像單元，面對該電子元件的第一表面，其中該第一表面包括該電子元件的凸出側；至少一個紅外線光源；其特徵在於：該紅外線光源被定位成使得該紅外線光源能夠照亮由雷射開槽製程引起的該電子元件的內部缺陷；以及 該紅外線光源和該電子元件相對於它們各自的水平面傾斜0°至90°的角度。 According to a preferred embodiment of the present invention, there is provided the following: an apparatus for detecting internal defects in an electronic component comprising: an imaging unit facing a first surface of the electronic component, wherein the first surface includes the electronic component The convex side of the component; at least one infrared light source; characterized in that: the infrared light source is positioned so that the infrared light source can illuminate internal defects of the electronic component caused by the laser grooving process; and The infrared light source and the electronic components are inclined by an angle of 0° to 90° with respect to their respective horizontal planes.
在本發明的另一個實施例中，提供一種用於檢測電子元件中的內部缺陷的方法(2)，包括以下步驟：(i)將該電子元件從一旋轉台站傳送到一檢查站；(ii)在該電子元件沿X軸方向移動時，透過一成像單元配合至少一個紅外線光源，檢查該電子元件的第一側壁；(iii)使該電子元件沿該電子元件的平面旋轉，並在該電子元件旋轉後，透過該成像單元檢查該電子元件的第二側壁；(iv)重複該步驟(iii)，使該電子元件沿該電子元件的該平面旋轉，並在該電子元件旋轉後，透過該成像單元檢查該電子元件的該第二側壁，藉此檢查該電子元件的四個側壁；(v)將該電子元件沿X軸方向移至一待機位置；以及(vi)將該電子元件送回該旋轉台站；其特徵在於：該紅外線光源被定位成使得該紅外線光源能夠照亮由雷射開槽製程引起的該電子元件的內部缺陷；以及該紅外線光源和該電子元件相對於它們各自的水平面傾斜0°至90°的角度。 In another embodiment of the present invention, there is provided a method (2) for detecting internal defects in electronic components, comprising the steps of: (i) transferring the electronic components from a rotating station to an inspection station; ( ii) When the electronic component moves along the X-axis direction, use an imaging unit with at least one infrared light source to inspect the first sidewall of the electronic component; After the electronic component is rotated, inspect the second side wall of the electronic component through the imaging unit; (iv) repeat the step (iii) to rotate the electronic component along the plane of the electronic component, and after the electronic component is rotated, pass through The imaging unit inspects the second side wall of the electronic component, thereby inspecting the four side walls of the electronic component; (v) moving the electronic component to a standby position in the X-axis direction; and (vi) sending the electronic component back to the rotary station; characterized in that: the infrared light source is positioned so that the infrared light source can illuminate internal defects of the electronic component caused by the laser grooving process; and the infrared light source and the electronic component are relative to their respective The horizontal plane is inclined at an angle of 0° to 90°.
1:裝置 1: Device
101:電子元件 101: Electronic Components
102:成像單元 102: Imaging unit
103:紅外線光源 103: Infrared light source
105:紅外線光源 105: Infrared light source
106:第一表面 106: First Surface
107:嵌入式紅外線光源 107: Embedded infrared light source
108:內部缺陷 108: Internal Defects
109:第二表面 109: Second Surface
111:側壁 111: Sidewall
112:旋轉台站 112: Rotary Station
113:檢查站 113: Checkpoint
ECHP:水平面 ECHP: horizontal plane
LSHP:水平面 LSHP: horizontal plane
X°,Y°:傾斜角 X°,Y°: Inclination angle
在結合附圖研究了詳細說明之後，將發現本發明的其他的方面及其優點： 圖1A為本發明的示例性圖，其中成像單元面向該電子元件的第一表面，而紅外線光源面向該電子元件的第二表面；圖1B為本發明的另一示例性圖，其中成像單元面向該電子元件的第一表，而該紅外線光源位於該電子元件的一個側壁處；圖1C為本發明的另一示例圖，其中該成像單元面向該電子元件的第一表面，而其中一個紅外線光源面向該電子元件的第二表面，而另一個紅外線光源位於該電子元件的一個側壁上；圖1D為本發明的另一示例性示圖，其中該成像單元嵌設有嵌入式紅外線光源；圖2呈現本發明檢測電子元件中的內部缺陷的示例性方法流程；及圖3為本發明的示例性圖，其展示在檢查站檢測電子元件中的內部缺陷。 Other aspects and advantages of the present invention will be discovered after studying the detailed description in conjunction with the accompanying drawings: 1A is an exemplary view of the present invention, wherein the imaging unit faces the first surface of the electronic component, and the infrared light source faces the second surface of the electronic component; FIG. 1B is another exemplary view of the present invention, wherein the imaging unit faces the second surface The first table of the electronic component, and the infrared light source is located at a side wall of the electronic component; FIG. 1C is another exemplary diagram of the present invention, wherein the imaging unit faces the first surface of the electronic component, and one of the infrared light sources Facing the second surface of the electronic component, and another infrared light source is located on a side wall of the electronic component; FIG. 1D is another exemplary view of the present invention, wherein the imaging unit is embedded with an embedded infrared light source; FIG. 2 An exemplary method flow of the present invention for detecting internal defects in electronic components is presented; and FIG. 3 is an exemplary diagram of the present invention showing detection of internal defects in electronic components at an inspection station.
在下面的詳細描述中，闡述了許多具體細節以便提供對本發明的透徹理解。但是，本領域普通技術人員應能理解，可以在沒有這些具體細節的情況下實踐本發明。在其他情況下，沒有詳細描述眾所周知的方法，過程和/或元件，以免使本發明不清楚。 In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, one of ordinary skill in the art will understand that the present invention may be practiced without these specific details. In other instances, well-known methods, procedures and/or elements have not been described in detail so as not to obscure the present invention.
從下面對本發明的實施例的描述中將更清楚地理解本發明，這些實施例僅以參考附圖的方式展現，這些附圖不是按比例繪製的。 The invention will be more clearly understood from the following description of embodiments of the invention, which are presented by way of reference only to the accompanying drawings, which are not drawn to scale.
如在本公開和本文的所附申請專利範圍中所使用的，單數形式的“一個”，“一種”和“該”包括複數指示物，除非上下文清楚地指示或另外指出。 As used in this disclosure and the appended claims herein, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise or dictates otherwise.
在本說明書的整個公開和申請專利範圍中，單詞“包括”和該單詞的變體，諸如“包括”和“包括”，意指“包括但不限於”，並且不意圖排除例如其他元件，整數或步驟。“示例性”是指“的示例”，並且不意圖傳達優選或理想實施例的指示，“例如”不是限制性的，而是用於說明目的。 Throughout the disclosure and patentability of this specification, the word "include" and variations of the word, such as "include" and "include", mean "including but not limited to" and are not intended to exclude, for example, other elements, integers or steps. "Exemplary" means "an example of," and is not intended to convey an indication of a preferred or ideal embodiment, and "such as" is not limiting, but is used for purposes of illustration.
通常，本發明要求保護一種用於檢測電子元件(101)中的內部缺陷(108)的裝置(1)，該裝置(1)包括：面向該電子元件(101)的第一表面(106)的一成像單元(102)，以拍攝該內部缺陷(108)的圖像，其中該第一表面(106)包括該電子元件(101)的凸出側；至少一個紅外線光源(103、105)，其被定位成使該紅外線光源(103、105)能夠照亮由雷射開槽製程引起的該電子元件(101)的內部缺陷(108)的配置；該紅外線光源(103、105)和該電子元件(101)相對於它們各自的水平面(LSHP，ECHP)傾斜0°至90°的角度。成像單元(102)和紅外線光源(103、105)的不同構造或設置將在圖1A至圖1D中描述。 Generally, the invention claims a device (1) for detecting internal defects (108) in an electronic component (101), the device (1) comprising: a first surface (106) facing the electronic component (101) an imaging unit (102) to take images of the internal defect (108), wherein the first surface (106) includes the protruding side of the electronic component (101); at least one infrared light source (103, 105), which An arrangement positioned to enable the infrared light source (103, 105) to illuminate internal defects (108) of the electronic component (101) caused by a laser grooving process; the infrared light source (103, 105) and the electronic component (101) are inclined by an angle of 0° to 90° relative to their respective horizontal planes (LSHP, ECHP). Different configurations or arrangements of imaging unit (102) and infrared light sources (103, 105) will be described in Figures 1A-1D.
參考圖1A，其為檢測電子元件(101)中的內部缺陷(108)，諸如微裂紋或內部裂紋，的示例性示圖，其中該內部缺陷(108)可以在整個電子元件(101)中發生。該成像單元(102)面對該電子元件(101)的第一表面(106)，藉此該電子元件(101)相對於其水平面(ECHP)傾斜0°至90°的角度(傾斜角X°)。該紅外線光源(103)面向該電子元件(101)的第二表面(109)。該第一表面(106)包括該電子元件(101)的凸出側，而該第二表面(109)是指該電子元件(101)的背側。或者，該紅外線光 源(105)可以相對於該紅外線光源(105)的水平面(LSHP)，以0°至90°的傾斜角Y°定位在該電子元件(101)的一個側壁(111)上，如圖1B所示。 Referring to FIG. 1A , which is an exemplary diagram of detecting internal defects ( 108 ), such as micro-cracks or internal cracks, in electronic components ( 101 ), which may occur throughout the electronic components ( 101 ) . The imaging unit (102) faces the first surface (106) of the electronic component (101), whereby the electronic component (101) is inclined by an angle of 0° to 90° with respect to its horizontal plane (ECHP) (tilt angle X° ). The infrared light source (103) faces the second surface (109) of the electronic component (101). The first surface (106) includes the convex side of the electronic component (101), while the second surface (109) refers to the backside of the electronic component (101). Alternatively, the infrared light The source (105) may be positioned on a side wall (111) of the electronic component (101) at an inclination angle Y° of 0° to 90° with respect to the horizontal plane (LSHP) of the infrared light source (105), as shown in FIG. 1B . Show.
現在請參考圖1C，其展示了該成像單元(102)和紅外線光源(103、105)的另一種設置。在這種設置下，該成像單元(102)面對該電子元件(101)的第一表面(106)，並且該電子元件(101)相對於其水平面(ECHP)傾斜0°至90°的角度(傾斜角X°)。將有兩個紅外線光源(103、105)，其中一個紅外線光源(103)面向該電子元件(101)的第二表面(109)，而第二個紅外線光源(105)位於該電子元件(101)的一個側壁(111)且相對於該紅外線光源(105)的水平面(LSHP)具有0°至90°的傾斜角Y°。可選地，該成像單元(102)包括嵌入式紅外線光源(107)，藉此該成像單元(102)與該嵌入式紅外線光源(107)一起作為一體操作。具有該嵌入式紅外光源(107)的該成像單元(102)設置在該電子元件(101)的第二表面(109)上，且該嵌入式紅外線光源(107)能夠照亮由雷射開槽製程引起的內部缺陷，而該成像單元(102)能夠拍攝內部缺陷的更清晰圖像，如圖1D所示。 Referring now to Figure 1C, another arrangement of the imaging unit (102) and infrared light sources (103, 105) is shown. In this arrangement, the imaging unit (102) faces the first surface (106) of the electronic component (101), and the electronic component (101) is inclined at an angle of 0° to 90° with respect to its horizontal plane (ECHP) (tilt angle X°). There will be two infrared light sources (103, 105), of which one infrared light source (103) faces the second surface (109) of the electronic component (101) and the second infrared light source (105) is located on the electronic component (101) One side wall (111) of the infrared light source (105) has an inclination angle Y° of 0° to 90° with respect to the horizontal plane (LSHP) of the infrared light source (105). Optionally, the imaging unit (102) includes an embedded infrared light source (107), whereby the imaging unit (102) operates together with the embedded infrared light source (107) as one body. The imaging unit (102) with the embedded infrared light source (107) is disposed on the second surface (109) of the electronic component (101), and the embedded infrared light source (107) is capable of illuminating a slot slotted by a laser process-induced internal defects, and the imaging unit (102) is able to capture a clearer image of the internal defects, as shown in FIG. 1D.
如圖2和圖3所示，其展示了用於在檢查站(113)處檢測電子元件(101)中的內部缺陷(108)的示例性方法和裝置。首先，(i)將電子元件(101)從旋轉台站(112)轉移到檢查站(113)(201)；接著，(ii)在該電子元件(101)沿X軸方向做直線線性移動時，透過一成像單元(102)結合至少一個紅外線光源(103、105)，檢查該電子元件(101)的第一側壁(203)；然後，(iii)沿該電子元件(101)的平面旋轉該電子 元件(101)，並在該電子元件(101)旋轉之後，透過該成像單元(102)檢查該電子元件(101)的第二側壁(205)。 As shown in Figures 2 and 3, an exemplary method and apparatus for detecting internal defects (108) in electronic components (101) at an inspection station (113) is shown. First, (i) the electronic component (101) is transferred from the rotary station (112) to the inspection station (113) (201); then, (ii) when the electronic component (101) is linearly moved along the X-axis direction , through an imaging unit (102) combined with at least one infrared light source (103, 105) to inspect the first side wall (203) of the electronic component (101); then, (iii) rotating the electronic component (101) along the plane electronic component (101), and after the electronic component (101) is rotated, the second side wall (205) of the electronic component (101) is inspected through the imaging unit (102).
重複執行該步驟(iii)(沿該電子元件(101)的平面旋轉該電子元件(101)，並在該電子元件(101)旋轉之後，透過該成像單元(102)檢查該電子元件(101)的第二側壁(205))，以進行該電子元件(101)的四個側壁的檢查(207)；該電子元件(101)沿X軸方向轉移到一待機位置(209)。最後，該電子元件(101)被傳送回該旋轉台站(112)(211)。最重要的是，該紅外線光源(103、105)能夠照亮由雷射開槽製程引起的內部缺陷(108)，例如該電子元件(101)的微裂紋和內部裂紋；並且，該紅外線光源(103、105)和該電子元件(101)相對於它們各自的水平面(LSHP，ECHP)傾斜0°至90°的角度(如傾斜角X°)。此外，該方法(1)還包括以下步驟：如果需要縫合圖像，則在步驟(v)將該電子元件(101)沿著X軸方向轉移到待機位置(209)之後，使該電子元件(101)沿Y軸方向移動(線性運動)。 Repeat the step (iii) (rotate the electronic component (101) along the plane of the electronic component (101), and after the electronic component (101) is rotated, inspect the electronic component (101) through the imaging unit (102) The second side wall (205) of the electronic component (101) is inspected (207) of the four side walls of the electronic component (101); the electronic component (101) is transferred to a standby position (209) along the X-axis direction. Finally, the electronic components (101) are transferred back to the rotary station (112) (211). Most importantly, the infrared light source (103, 105) is capable of illuminating internal defects (108) caused by the laser grooving process, such as microcracks and internal cracks of the electronic component (101); and, the infrared light source (108) 103, 105) and the electronic component (101) are inclined by an angle of 0° to 90° (eg an inclination angle X°) with respect to their respective horizontal planes (LSHP, ECHP). In addition, the method (1) further includes the following steps: if the image needs to be stitched, after step (v) transferring the electronic component (101) to the standby position (209) along the X-axis direction, making the electronic component (101) ( 101) Move in the Y-axis direction (linear motion).
透過讓燈光投射的角度不同，例如其中一個紅外線光源(103)位於電子元件(101)的第二表面(109)之下，和/或另一個紅外線光源(105)位於該電子元件(101)的一側壁(111)且相對於該紅外線光源(105)的水平面(LSHP)具有0°至90°的傾斜角，可以在最小雜訊的情況下檢測和檢查內部缺陷或微裂紋，因為與常規檢查系統相比，該成像單元(102)可以拍攝到更清晰的圖像。本發明透過使用反射和折射原理來聚集由成像單元(102)拍攝的圖像來獲得顯著結果。 By making the light projected from different angles, for example, one of the infrared light sources (103) is located under the second surface (109) of the electronic component (101), and/or the other infrared light source (105) is located on the electronic component (101). A side wall (111) and with an inclination angle of 0° to 90° with respect to the horizontal plane (LSHP) of the infrared light source (105), it is possible to detect and inspect internal defects or micro-cracks with minimal noise, since it is different from conventional inspection Compared with the system, the imaging unit (102) can capture clearer images. The present invention achieves remarkable results by using the principles of reflection and refraction to gather the images captured by the imaging unit (102).
1:裝置 1: Device
101:電子元件 101: Electronic Components
102:成像單元 102: Imaging unit
103:紅外線光源 103: Infrared light source
105:紅外線光源 105: Infrared light source
106:第一表面 106: First Surface
109:第二表面 109: Second Surface
111:側壁 111: Sidewall
ECHP:水平面 ECHP: horizontal plane
LSHP:水平面 LSHP: horizontal plane
X°,Y°:傾斜角 X°,Y°: Inclination angle
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| TW200702656A (en) * | 2005-05-25 | 2007-01-16 | Olympus Corp | Surface defect inspection apparatus |
| TW201110363A (en) * | 2009-04-20 | 2011-03-16 | Intego Gmbh | Method for detecting flaws in a thin wafer for a solar element and device for carrying out said method |
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| TW200702656A (en) * | 2005-05-25 | 2007-01-16 | Olympus Corp | Surface defect inspection apparatus |
| TW201110363A (en) * | 2009-04-20 | 2011-03-16 | Intego Gmbh | Method for detecting flaws in a thin wafer for a solar element and device for carrying out said method |
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