201110363 六、發明說明： 【發明所屬之技術領域】 此發明乃有關於用於太陽能元件之薄晶片的瑕疵偵測流 程以及進行該流程的裝置。 【先前技術】 要生產太％能模組，必須從所謂的鎊模，例如多晶石夕，通 常是以切割的方式生產晶片。這種晶片是加工為成品太陽能元 件的最基本元件，如太陽能電池或數個太陽能電池結合而成的 太陽能模組。 晶片的尺寸非常薄，厚度不超過500 um，有部分還不及 200um，而侧面直徑約為數公分到3〇公分。 製造太陽賴組的聰巾’未加玉的晶#會在數個流程步 驟中’例如極化、塗層和打Hp，加工成太陽能電池的成品，太 陽能電池再連結成太陽能模組。 除了未加工晶片和太陽能電池本身遺失產生的損害以 外’如果在生產過程中，晶片發生破裂情形，後續產生°的損宝 大都是來自成品設備中的殘留、其他晶片或太陽能電池的損害 或設備暫時的中止。 如果能夠及早在產程中發現這些可能造成破裂的晶片， 並篩選出來，就能避免這些損害的發生。 後期會發生破裂情形的晶片，在產程更早階段大都會出 現微小裂縫。這些小裂縫初_不會馬上造成晶片的破裂， 械負荷的生產步驟中’报有可能就會使晶 =出現破裂的情形’因此謹慎地將出現微小裂縫晶片筛選出 來’可以大大地提升生產收益。 201110363 在單一結晶和多晶晶片上進行小裂縫的辨認，有很多不 同的方法，但全部都有其缺點。例如使用超音波方式，可能 會有機械性刺激會產生破裂。同樣地，把折彎測試整合於生 產線也是缺點多多。以紅外線直接對晶片進行橫面光學透射 的方法，不能使用於太陽能電池，因為生產過程中施加的壓 力膏是不具透光性的。此外，進行多晶晶片橫向透視時，很 難分辨那是小裂縫還是多晶體的晶界。 太樣能電池和太陽能模組的生產流程是一連串連續性的 量產自動化流程，因此，晶片的檢驗應該要整合到自動化的 生產流程中，動作也應該盡可能越快越好。 由此可見，此發明的任務在於，盡可能開發出一種可以 簡單進行，同時不會破壞材料的檢驗方法，來檢測瑕疵的位 置，如小裂縫等，且該檢驗的進行不會受到位於多晶組織的 晶界結構影響。 【發明内容】 根據此發明的流程完成了這項任務。這項流程的設計是， 使用光學傳輸流程來進行檢測’同時從側面對晶片進行光照透 射。所謂從侧面進行光線透射係指，光線經由窄侧邊進入晶 片，並在晶片裡面，兩個平行對立的寬邊面之間橫向伸展。由 於晶片的厚度非常小，一般小於500 um，或甚至2〇〇 um以下， 且同時晶片侧面寬度大都有好幾公分，或甚至大於1〇 cm。這 個包括了光源和光學照相機的測量系統光學軸的平行平面裝 置，測試起來並不是那麼有保障。為了更確保光線可以穿透晶 片，因此進而設計將晶片排列於一環境媒介中，此環境媒介的 4 201110363 折射率小於單-晶片的折射心且折射率低得好，例如至少 減少約三分之一。藉此得以確保，當晶片組非呈現平行平面軸 心裝置時，當光線進入晶片的角度有些傾斜時，由於全反射的 緣故，晶片内的光線會在從對面窄邊面離開晶片之前，會多次 反射在環賴介的界面上。這種_全反射來達到光線引導的 效果也同樣使用在光纖產品上。 這種配置的立基點在於，事實上，特別是雖然在持續性 的「線上」流程監控上，光學軸的平行平面裝置一般而言是 不可能的，但是如果能夠確保，透過在環境媒介界面上的全 反射，鲍夠將光線（全部）進行反射，如此一來光線橫向整 個晶片長度的透射就變得有可能了。這裡所·晶片一般意 指位於每-種生產階段的晶片，包括了未加工的晶片、半加 工或要生產成太陽能電池的晶片，以及已經黏上電帶（用來 連接數個太陽能電池的電子連接帶）的太陽能電池。 由於光線側邊透視的緣故，晶片上的瑕疵，尤其是小裂 縫，但其他形式的瑕疵，如材料污染產生的雜質等，可以完全 被檢測出來，a為光線t在有瑕_地方被魏。不同於垂直 式的光線透設方式，橫式的光線透射方式，味不會將晶片的 瑕疵與多晶體的晶界混淆。在側邊光線透射下，小裂縫很容易 被檢視出來，因為小裂縫是在材料中真實的韻情形，裂縫從 寬邊面延制另_頭的寬邊面，當絲穿縫時，無法再與 寬邊面保持平行’韻乎無法穿透裂缝處’衫晶的晶界至少 201110363 還有物料的連結，當光線透射時，只會稍稍減弱光線的強度。 當光線垂直透射寬邊面時，不同多晶體之間的對比強烈地取決 於表面處理（尤其是光滑的表面），因此產生傳送畫面的結構， 這些結構相較於瑕疵處，顯得明顯許多。 進行光線透射方式時，一般會對光線波長進行調整，尤 其時紅外線波長要大於8〇〇 nm，一般會調整在8〇〇至5〇〇〇 nm 之間。光線會先設定好光線投射的方向，一般採用排列呈直 線狀或矩狀的IR LED燈或IR雷射燈當作光源。 晶片一般為多晶矽晶片，折射率約為3. 5。因此，折射率 約為1的空氣，很適合作為環境媒介。一般而言，這裡所謂的 折射率是指整體折射指數的實際比重而言。 依據這樣的配置，來自光源的光線通過晶片，在排列於晶 片後方的光圈的輔助之下，光線強度減弱，藉此避免晝面加工 產物的發生。由於早一晶片的厚度很小，所以有部分光線可能 不經過晶片，就直接打在照相機上。這裡使用的照相機一般是 设有數個感應元件的數位照相機。因為由於晶片側邊較長延 伸，只有少數光線會穿透晶片，因此照相機必須調整為高感度 功能。然而，這樣的高感度在光線直接打在照相機上時，可能 會產生畫面加工產物，尤其是可能會出現所謂「blooming」的 情況’也就是說晝面會出現白色線條。 一般而言’要避免這種畫面加工產物，可以將晶片窄邊面 倾斜對著從光源處投射進來的光線，使得投射進來和從晶片離 6 201110363 開的光線呈現錯置交錯的排列，使得非垂直進來的光線透過兩 邊界面上的光折射原理’進來和出去的光線以交錯排列方式移 動。於是透過這樣的方式’便使得在邊上的照相機也呈現交錯 排列’於是就不會直接接受到光源來的光線。這裡所謂的交錯 排列指的是，照相機的感應面與光源的光線呈現位移交錯的排 列。 晶片傾斜方向加上在晶片和照相機之間装設光圈的方 式，具有其優點。這裡的光圈也可以蓋住晶片的窄邊面，以確 保透射的光線可以達到照相機處。 為了能夠正確地偵測出晶片内部瑕疵處，各界偏愛的方法 就是至少從兩個不同的方向，以光線透射晶片，特別是從兩個 彼此呈現合適角度的方向。 為了能夠有效律地對大量晶片進行檢驗評估，於是設計將 數個晶片組成-組，可同時進行數個晶片的檢驗。數個晶片的 光線透射藉由侧邊傳送的方式首度成功’因為—般傳統設計的 傳送方式’例如侧對⑼進行寬邊_光_視，是不可能 的’就這-點而言，現在這種m:域魏完成快速、b 有效律、又安全的測試，同時對材料又不會造成損害。 一般而言，光線大輕現直線狀制，㈣片f尤其是晶 片組則類似被連雜線狀_。這時單—晶片或數個晶片Z 成的晶片組進行檢測’ _以（列狀）照相機接收畫面，^ 再以合適陳《魏_畫面組合成_個2D _體圖。除此 7 201110363 之外’如果還有來自第二個光賴射方向的資訊時，那應該就 要採用能夠產生3D畫面的軟體。 一般而言，這裡大都使用列狀照相機，指的是感應元件並 排成列狀賴相機。如果是使用平面照相機，則也可以將感應 元件排列成矩行。 如果要將這個檢測動作快速地整合到即時產線流程中，可 以將晶片掃過光源處，為了達到檢驗目的，可以將直線排列的 光源垂直瞄準，也就是說以晶片組的縱向方向排列。 整體而言’這個檢測是對晶片進行連續性的檢測，且將檢 測裝置自動結合在生產輸送帶流程中，有時候還要多次連續地 翻轉晶片或晶片組90度。 連續性檢測流程中也包括安裝適當分析評估軟體的分析儀 器，進行晝面自動化分析，如果在自動化分析過程中發現瑕疵 處，儀器就會產生瑕疵訊號》瑕疵訊號是光學或聲音訊號，但 也可以以報告資訊中的附註來表現。 這個方式可以檢測未加工晶片、半成品或成品的太陽能電 池。這裡所謂的未加工晶片指的是離開鑄模後的晶片，成品太 陽能電池則是加工過（酸化、p-n二極化或抗反射塗層）以及 打印的晶片，這些晶片則已經附有必要的電子接通和電路等。 側邊光線透射的方式則也可以對成品太陽能電池進行檢測，因 為過去，晶片寬邊面由於有打印，光線透視的方式是不可行的。 【實施方式】 8 201110363 圖1和圖2顯示-錄測裝置，設計來在光線透射過程 中，檢測極端薄的檢體，找尋瑕疵處。特別是在生產流程中， 這個檢測裝置是專Η帛來整合職續產程巾’斯自動化「線 上」檢測。晶圓片2用來作為檢體’是使職太陽能元件，如 太陽能電池或由數個太陽能電池組合而成的太陽能模組等。被檢 測的晶圓片2，其厚度少於200 um。所謂薄的檢體，其厚度一般 而言都少於5GG um。每-個晶片是由兩個平行對立的寬^邊如 以及一個連結寬面邊的窄面邊2b框住（請參考圖3)。 檢測裝置1包含了-個光源4，特別是紅外線光源。這個光 源以特定的投射方向，向光學轴5投射出光線，光源4的另一頭 裝設有-台數位照相機6。光源4和照械6最好都是以直線狀 排列。也就是說’要使用列狀照相機來作為這裡所需的照相機 6，這種照相機會有數個感應元件並排排列。光源4和照相機6 以個控制器8連結。控制器8的功能在於操控光源斗和照相機 6 ’以及也對從照相機6傳送過來的畫面訊號進行分析。因此 ’控制器8同時也作為分析評估裝置。但控制和 也可以是分開的。 衣直 it’檢測裝置1還包括了一個載架1〇,可以放置晶圓片2。 这個載架10最好是可以旋轉的。此外，這個載架10在輸送裝置， 如輸送帶難助下，可__觀裝置上。也可以在 12本體上建構一個載架，那晶圓片2就直接放置在輸送帶^上。 在呈現的圖解中，置於載架1〇上方的晶片組 單一晶圓片2_合而成。晶片組16和_6之== -個光118。細18的擺放位置可峨止絲直接打在昭相機 6上。展示_中’錢的位置在沿著檢職置光學軸$的光= 束上，光學轴5是由光源放射出來的光線形成的，這些光線投射 9 201110363 方向與照相機6的感應麵成直角。 ， 如圖1的圖解，晶片組16之於光學軸2〇有些傾斜，也就是 說晶片組橫向軸和光學軸5有些扭轉，所以光線有些傾斜，並非 以直角的角度投射到窄邊面2b。因此，光線在進出晶片時都會 折射，而從晶片出去的光線侧邊偏離光學軸5 ,投射到照相機6 上。投射在晶圓片2上方’沿著光學轴5延伸的部分光線會被光 圈18吸收。可以透過輸送方向光線的扭轉來達到這樣扭曲的限 向。圖2的側面圖中，由於這樣的扭曲，晶片組16的角變成垂 直的直線。 單一 aa圓片2侧面光線透射的原理以圖3來說明：由於晶圓 片2的厚度很薄’但侧面延伸相對地變得很大，因此在現實中， 如果要讓絲軸透射平行平面的晶圓片2，將檢測整合在連續性 過程中’必須大費周章不可^而且晶片（例如呈現打印好的太陽 能電池狀態）由於重量或内應力的緣故，可能會很脊曲，因此直 ，性的光線穿透晶#是不可朗。因此，光線會以某種角度進入 S曰圓片2 ’然後由於晶㈣2厚度㈣，所以光線會打到兩個寬 :2a的其巾之—。晶圓# 2外面的環麟介被選巾_因在於， 舍^率小於晶圓片2的折射率n2°藉此，晶圓片2内的光線 儿王反射在界面上’然後投射到對Φ的窄©.邊上2b。因此晶 圓片2的作用類似光纖。 果瑕疯處疋小裂縫，在出現小裂縫的地方會出現吸附以 及/或擴散現象，光學上即·亮/黑暗分布來呈現。 ，4顯不的疋晶片組16的圖面，其中一片晶圓片2，有損 4·曰u 1^裂縫2〇 ’它的走向在檢測中被識別出來。為了產 生晶片組16 (圖4b 丨m 、固4b，c)兩側的側面圖，必須從兩側成90度的 °接收畫面’ g此晶片組16旋轉成90度，並且經過照相機 201110363 位置兩次。除了_到有損傷的晶圓片 位置進行定位。照相機6可 卜也此對小裂縫的 堂絲細μ 精確地進仃位置分析，因此可以 面中呈現片2 °兩個緊鄰晶圓片2之間的界面在畫 中呈現…色線條，圖解中，晶片組16中 片2的部分位置出現小裂縫的痕跡。、咐置’有個曰曰圓 從圖解中，我們可以看見呈直線 狀照相機6，如此-來，曰曙九，原4以及列 線狀被綱：Λ 的所有晶圓片2都能呈直 相機 6 接_。 :的知瞄過程中進行檢測，同時照相機也進行連續性照面拍 攝。圖4呈現的晝面顯示控制器8將照相機 =2D重建。嶋中_，晶版16軸雌送裝置上中= =掃=，檢職置丨的光學零件可峨簡單的触 可以處理光學零件。 光源4和照相機6採垂直定位以外，也可以做水平的定位， 而照相機除了列狀照相機6以外，也可以使用平面照相機。 這裡展示的檢财式除了整個晶片組以外，也可以對單一 晶圓片2進行檢測。在進行檢測過程中，晶圓片2或晶片組16 =畫面最好是以呈90度’如果要拍攝另一個方向的晝面，最好 安排另-個光源以及第二台照相機。整體來看，檢測裝置裡要 有兩個檢測站。 除了圖1展示將光源4和照相機6擺設在彼此對立的位置 外’原則上也可峨其他絲和晝面接㈣鋪，也就是說我 們也可以設計光源4、晶圓片2和照相機6在不同的位置，例 如負責接收暗場晝面的照相機6就可以和光源4成9〇度的位置 排列。同時也能設計兩台照相機，以不同的入射角對準晶圓片 2 ’例如-20度和+ 20度，透過這樣的安排，不必旋轉晶片，也 11 201110363 能蒐集到可以接收到空間資訊。 整個檢測過程是全自動的，並由控制器8來控制。自動控 制也包括可選擇性或搭配晶片組16自動傳送、載架1〇自動旋 轉以及畫面自動分析和有損害晶片檢測的自動挑出。 展示有照相機6的圖5a- 5c進行晶片組16的畫面捕捉和 編輯有更進一步說明，圖解中顯示多數個（大於1〇〇)由晶片 組16組成的元件，以水平方向彼此堆疊，圖解中就是這個175 個元件（圖5a，5b的晶圓片2和圖5c的太陽能電池），常見尺 寸在圖示中有標明，元件的長/寬約156mm，整個晶片組16高 度約35mm。 圖5a顯示晶圓片2組成的晶片組16，其中許多晶圓片2 出現雜質22，也就是不被預期的雜質或異物，被含蓋在晶圓片 的物料中’造成瑕疵。這些雜質在黑色領域的輔助下，很容易 被辨識出來。雜質22可能會以不同的型態出現，它們可能只會 出現在一個或少數晶片中，但也可能出現在所有晶片中。 圖5b同樣也顯示晶圓片2組成的晶片組16的側面畫面， 有些晶圓片2出現小裂縫20。下圖顯示放大的圖面，畫面中水 平黑色線條就是晶圓片2中的小裂縫20，在放大圖面的下圖 中’我們可以看見3個受損晶圓片2。 圖5c和圖5b —樣，顯示晶片組16的侧面畫面。上圖看見 的垂直黑色線條就是電池的銅排，也就是電池的通電裝置。透 過下圖放大的圖示，可以很清楚地看出’利用這裡說明的檢測 方式，不管是成品/打印/塗層的太陽能電池都能輕易地辨識出 瑕庇20，22的位置。在放大的圖示中，可以看見有一個太陽能 電池出現小裂縫2〇。這個小裂縫20的高度大約和太陽能電池 的厚度相仿，一般約為200 um ° 12 201110363 利用這裡描述在光線透視中進行側邊檢測方式可 下不同的測試情況： "" 以實現以 -單-晶片的檢測，尤其是在晶片生產線尾端的未加工 太陽能電池生產線的來料檢驗等，單—晶圓片2會在二 產線的輸送帶12上進行檢驗。 又 晶片2組成的晶 晶圓片2組合成 一在生產線輸送帶的起端和終端對（未加工） 片組進行檢驗，進行這種檢驗時，是將數個 一個晶片組16。 -對已經做成半成品或成品鴻__單—晶片進行檢驗。 這個檢測可以在太陽能電池的生產線上進行，也可以在生產 太陽能模組生產線的起端或在組裝，也就是電子串連太陽能 電池的生產線過程中進行’也就是將這些争連的太陽能電池 放在太陽能模組載架根基上之前。 一單一晶圓片2組成的晶片組16的檢驗，這些單一晶片已經 被加工成半成品或成品太陽能電池。 相較於垂直式的光線透視檢驗方法，這裡描述的侧邊光線 透視檢驗法擁有以下的優點： 一大大提高物料通過量，也就是說，利用檢測裝置每時間單位 可以檢測更多的單一晶片，特別是因為可以同時檢驗晶片組 16内的數個單一晶圓片2，因此物料通過量約提高1〇個係 數。 一利用這個檢測方式’連半成品或成品（打印）太陽能電池也 可以被檢測。 一比較能夠區分小裂縫和多晶的晶界。 【圖式簡單說明】 圖1 :檢測裝置的簡單俯視圖 13 201110363 圖2:圖1檢測裝置的側面圖 圖3:光照侧邊傳送的簡圖說明 圖4 a-c :照相機從兩邊接收的晶片組的晝面，以及有瑕 疵晶片的簡圖說明 圖5a :晶片組侧面被接收到的晝面，其中幾個晶片出現雜 質。 圖5b .晶片組侧面被接收到的晝面’其中幾個晶片出現小 裂縫。 圖5c :太陽能電池組側面被接收到的 能電池出現小裂縫。 【主要元件符號說明】 1檢測裝置 2晶片 2’有損傷的晶片 2b窄邊面 4光源 5光學軸 6照相機 8控制器 10载架 12輸送帶 14輸送裝 16晶片組 18光圈 20小裂縫 Μ雜皙 nl環境媒介的折射率 π2晶片的折射率 2a寬邊面201110363 VI. Description of the Invention: [Technical Field of the Invention] This invention relates to a flaw detection process for a thin wafer for a solar element and a device for performing the same. [Prior Art] To produce a too high energy module, it is necessary to produce a wafer in a cutting manner from a so-called pound mold, such as polycrystalline stone. This type of wafer is the most basic component of a finished solar component, such as a solar cell or a combination of several solar cells. The size of the wafer is very thin, the thickness is no more than 500 um, some are less than 200um, and the side diameter is about several centimeters to 3 centimeters. The Sunglasses that make the Sun Lai Group 'un-added jade crystals' will be processed into solar cell products in several process steps, such as polarization, coating and Hp, and the solar cells will be connected into solar modules. In addition to the damage caused by the unprocessed wafer and the solar cell itself, 'if the wafer breaks during the production process, the damage generated by the subsequent generation is mostly from the residual of the finished equipment, damage to other wafers or solar cells or temporary equipment. The suspension. If these chips, which may cause cracking, can be found early in the labor process and screened out, these damages can be avoided. In the later stage of the wafer, a crack will occur, and micro cracks will appear in the early stages of the labor process. These small cracks will not cause the wafer to rupture immediately. In the production step of the mechanical load, it is possible to cause the crystal to crack. Therefore, carefully screening the micro-crack wafers can greatly improve production. income. 201110363 There are many different methods for identifying small cracks on single crystal and polycrystalline wafers, but all have their drawbacks. For example, using the ultrasonic method, there may be mechanical stimuli that may cause cracking. Similarly, integrating bend testing into the production line is also a disadvantage. The method of directly transmissive optical transmission of the wafer by infrared rays cannot be used for a solar cell because the pressure paste applied during the production process is not translucent. In addition, when performing lateral fluoroscopy of a polycrystalline wafer, it is difficult to distinguish whether it is a small crack or a crystal grain boundary. The production process of the battery and solar modules is a series of continuous automated production processes. Therefore, wafer inspection should be integrated into the automated production process, and the actions should be as fast as possible. It can be seen that the task of the invention is to develop an inspection method which can be carried out as simple as possible without damaging the material, to detect the position of the crucible, such as a small crack, etc., and the inspection is carried out without being subjected to polycrystalline The influence of the grain boundary structure of the structure. SUMMARY OF THE INVENTION This task is accomplished in accordance with the flow of the invention. This process is designed to use an optical transmission process for inspection while simultaneously illuminating the wafer from the side. Light transmission from the side means that light enters the wafer through the narrow sides and extends laterally between the two parallel opposing broad sides in the wafer. Since the thickness of the wafer is very small, it is generally less than 500 um, or even less than 2 um, and at the same time the width of the side of the wafer is several centimeters, or even more than 1 〇 cm. This parallel plane device, which includes the optical axis of the measurement system of the light source and optical camera, is not as secure as it is tested. In order to ensure that the light can penetrate the wafer, the wafer is further designed to be arranged in an environmental medium. The refractive index of the environmental medium of 4 201110363 is smaller than that of the single-wafer and the refractive index is low, for example, at least about three-thirds. One. Thereby, it is ensured that when the wafer set does not exhibit a parallel plane axis device, when the angle of light entering the wafer is somewhat inclined, due to total reflection, the light in the wafer will be more before leaving the wafer from the opposite narrow side. The secondary reflection is on the interface of the ring. This effect of _ total reflection to achieve light guidance is also used in fiber optic products. The basis of this configuration is that, in fact, especially in the continuous "online" process monitoring, the parallel plane device of the optical axis is generally impossible, but if it can be ensured, through the environmental media interface The total reflection, Bao enough to reflect the light (all), so that the transmission of light across the length of the wafer becomes possible. Here, a wafer generally means a wafer at each stage of production, including unprocessed wafers, semi-processed or wafers to be produced into solar cells, and electronic tapes that have been bonded (for connecting several solar cells) Connect the solar cell with the strap). Due to the side view of the light, the flaws on the wafer, especially the small cracks, but other forms of flaws, such as impurities caused by material contamination, can be completely detected, and a is the light t is in the 瑕_ place. Unlike the vertical light transmissive method, the horizontal light transmission mode does not confuse the defect of the wafer with the grain boundary of the polycrystal. In the side light transmission, small cracks are easy to be inspected, because small cracks are the real rhyme in the material, and the cracks extend from the wide side to the wide side of the other head. When the silk is seamed, it can no longer be Parallel to the wide side surface 'The rhyme can't penetrate the crack.' The crystal grain boundary of the shirt crystal is at least 201110363. There is also a material connection. When the light is transmitted, the light intensity will be slightly weakened. When the light is transmitted vertically across the broad side, the contrast between the different polycrystals is strongly dependent on the surface treatment (especially the smooth surface), thus creating a structure that conveys the picture, which is much more pronounced than the crotch. When the light transmission mode is used, the wavelength of the light is generally adjusted. In particular, the infrared wavelength is greater than 8 〇〇 nm, and is generally adjusted between 8 〇〇 and 5 〇〇〇 nm. The light will first set the direction in which the light is projected. Generally, an IR LED or an IR laser that is arranged in a straight or rectangular shape is used as the light source. 5。 The wafer is generally a polycrystalline germanium wafer, a refractive index of about 3.5. Therefore, air having a refractive index of about 1 is suitable as an environmental medium. In general, the so-called refractive index herein refers to the actual specific gravity of the overall refractive index. According to such a configuration, light from the light source passes through the wafer, and the light intensity is weakened with the aid of the aperture arranged behind the wafer, thereby preventing the occurrence of the kneading process product. Since the thickness of the wafer is small as early as possible, some of the light may hit the camera directly without going through the wafer. The camera used herein is generally a digital camera provided with a plurality of sensing elements. Because only a small amount of light can penetrate the wafer due to the long extension of the sides of the wafer, the camera must be adjusted to a high sensitivity function. However, such a high sensitivity may result in a picture processing product when the light is directly hit on the camera, and in particular, there may be a case of so-called "blooming", that is, a white line appears on the face. In general, to avoid this kind of picture processing product, the narrow side of the wafer can be tilted against the light projected from the light source, so that the light projected into and out of the wafer from the 201110363 is staggered and staggered. The incoming light passes through the principle of light refraction on both boundary surfaces. The incoming and outgoing rays move in a staggered arrangement. Thus, in this way, the cameras on the sides are also arranged in a staggered manner, so that the light from the light source is not directly received. The so-called staggered arrangement here means that the sensing surface of the camera and the light source of the light source are arranged in a staggered arrangement. The tilt direction of the wafer plus the way in which the aperture is placed between the wafer and the camera has its advantages. The aperture here also covers the narrow side of the wafer to ensure that the transmitted light reaches the camera. In order to be able to correctly detect the flaws inside the wafer, the preferred method is to transmit the light through the light from at least two different directions, especially from two directions that are at an appropriate angle to each other. In order to be able to test and evaluate a large number of wafers effectively, a number of wafers are grouped into groups, and several wafers can be inspected simultaneously. The transmission of light from several wafers is the first to succeed by means of side-sending 'because of the traditionally designed transmission method' such as side-to-side (9) wide-side _light_view, it is impossible 'in terms of this point, Now this m: domain Wei completes the fast, b-effective, and safe test, and does not cause damage to the material. In general, the light is light and light in a straight line, and (4) the sheet f, especially the wafer group, is similarly entangled. At this time, the wafer group formed by the single-wafer or a plurality of wafers Z is detected by the (column) camera receiving picture, and then the appropriate image is combined into a 2D_body image. In addition to this 7 201110363 'If there is information from the second direction of light, then it should use software that can produce 3D pictures. In general, most of the columns here use a column camera, which refers to the sensing elements arranged in a row. If a flat camera is used, the sensing elements can also be arranged in a rectangular line. If this detection action is to be quickly integrated into the real-time production process, the wafer can be swept through the source. For inspection purposes, the linearly aligned sources can be aimed vertically, that is, in the longitudinal direction of the wafer set. Overall, this test is a continuous inspection of the wafer and automatically incorporates the inspection device into the production conveyor process, sometimes repeatedly flipping the wafer or wafer set 90 degrees multiple times. The continuity inspection process also includes the analysis instrument for installing the appropriate analysis and evaluation software, and the automatic analysis of the kneading surface. If the defect is found during the automated analysis, the instrument will generate a signal. The signal is an optical or audio signal, but it can also Expressed as a note in the report information. This method can detect unprocessed wafers, semi-finished products or finished solar cells. The so-called unprocessed wafer here refers to the wafer after leaving the mold, and the finished solar cell is processed (acidified, pn-polarized or anti-reflective coating) and printed wafers, which have been attached with the necessary electronic connections. Tonghe circuit, etc. The side light transmission method can also detect the finished solar cell, because in the past, the wide side of the wafer was not feasible due to the printing. [Embodiment] 8 201110363 Figures 1 and 2 show a recording device designed to detect extremely thin specimens during light transmission and to find defects. Especially in the production process, this inspection device is dedicated to the integration of the continuous production of the towel "S Automation" on-line inspection. The wafer 2 is used as a sample body, which is a solar module such as a solar cell or a solar module composed of a plurality of solar cells. The wafer 2 being inspected has a thickness of less than 200 um. The so-called thin specimens generally have a thickness of less than 5 GG um. Each wafer is framed by two parallel opposing width edges, such as a narrow side edge 2b connecting the wide sides (see Figure 3). The detection device 1 comprises a light source 4, in particular an infrared light source. This light source projects light to the optical axis 5 in a specific projection direction, and the other end of the light source 4 is provided with a digital camera 6. Preferably, the light source 4 and the illumination device 6 are arranged in a straight line. That is to say, a column camera is used as the camera 6 required here, and such a camera has a plurality of sensing elements arranged side by side. The light source 4 and the camera 6 are connected by a controller 8. The function of the controller 8 is to manipulate the light source bucket and the camera 6' and also to analyze the screen signals transmitted from the camera 6. Therefore, the controller 8 also serves as an analysis and evaluation device. But the control sum can also be separate. The clothing it's detecting device 1 further includes a carrier 1 to which the wafer 2 can be placed. This carrier 10 is preferably rotatable. In addition, the carrier 10 can be viewed on a conveyor such as a conveyor belt. It is also possible to construct a carrier on the body 12, and the wafer 2 is placed directly on the conveyor belt. In the illustrated illustration, a wafer set of single wafers placed above the carrier 1 is combined. == - a light 118 of the chip sets 16 and _6. The position of the thin 18 can be directly hit on the camera 6 by the wire. The position of the display _ middle 'money is on the light = beam along the optical axis of the job placement, the optical axis 5 is formed by the light emitted by the light source, and the ray projection 9 201110363 direction is at right angles to the sensing surface of the camera 6. As illustrated in Fig. 1, the optical axis 2 of the wafer set 16 is somewhat inclined, that is, the transverse axis of the wafer set and the optical axis 5 are somewhat twisted, so that the light is slightly inclined and is not projected at a right angle to the narrow side face 2b. Therefore, the light is refracted as it enters and exits the wafer, and the side of the light exiting the wafer is deflected from the optical axis 5 and projected onto the camera 6. Part of the light projected across the wafer 2 along the optical axis 5 is absorbed by the aperture 18. This twisting direction can be achieved by twisting the light in the conveying direction. In the side view of Fig. 2, due to such distortion, the corners of the wafer group 16 become a straight line. The principle of light transmission on the side of a single aa wafer 2 is illustrated in Figure 3: since the thickness of the wafer 2 is very thin, but the lateral extension becomes relatively large, in reality, if the filament is to be transmitted through a parallel plane Wafer 2, integration of inspection into the continuity process 'must be too expensive and the wafer (for example, the state of the printed solar cell) may be very curved due to weight or internal stress, so straight, sex The light penetrates the crystal # is not lenient. Therefore, the light enters the S曰 disc 2' at an angle and then due to the thickness of the crystal (4) 2 (four), the light will hit two widths: 2a of its towel. The outer ring of the wafer #2 is selected as the towel _ because the yield is less than the refractive index n2 of the wafer 2, whereby the light rays in the wafer 2 are reflected at the interface' and then projected to the pair The narrowness of Φ ©. 2b on the side. Therefore, the wafer 2 functions like an optical fiber. If there is a small crack in the madness, there will be adsorption and/or diffusion in the place where small cracks appear, and the optically bright/dark distribution will appear. 4, the picture of the chip group 16 is shown, one of the wafers 2, which is damaged 4·曰u 1^crack 2〇' its orientation is recognized in the detection. In order to generate side views on both sides of the wafer set 16 (Fig. 4b 丨m, solid 4b, c), it is necessary to receive the picture at 90 degrees from both sides. This wafer set 16 is rotated to 90 degrees and passes through the camera 201110363. Times. In addition to _ to the location of the damaged wafer location. The camera 6 can also accurately analyze the position of the small cracks, so that the surface can be presented in the form of 2 ° two adjacent to the wafer 2 in the picture ... color lines, in the diagram At the partial position of the sheet 2 in the wafer set 16, traces of small cracks appear. From the illustration, we can see that the linear camera 6 is so straight, and that all the wafers 2 can be straight. Camera 6 is connected to _. : The detection is performed during the aiming process, and the camera also performs continuous face-to-face shooting. The facet display controller 8 presented in Figure 4 reconstructs the camera = 2D.嶋中_, the crystal plate 16-axis female delivery device on the = = scan =, the optical components of the inspector can be used to handle optical parts with a simple touch. The light source 4 and the camera 6 can be positioned horizontally in addition to the vertical positioning, and the camera can use a flat camera in addition to the column camera 6. The checkout model shown here can also detect a single wafer 2 in addition to the entire wafer set. During the inspection process, the wafer 2 or the wafer set 16 = the picture is preferably at 90 degrees. If the face of the other direction is to be taken, it is preferable to arrange another light source and a second camera. Overall, there are two inspection stations in the inspection device. In addition to Figure 1 showing that the light source 4 and the camera 6 are placed at opposite positions from each other, in principle, other wires and facets can be connected (four), that is, we can also design the light source 4, the wafer 2 and the camera 6 differently. The position, for example, the camera 6 responsible for receiving the dark field face can be arranged at a position of 9 degrees with the light source 4. At the same time, two cameras can be designed to align the wafers 2' at different angles of incidence, such as -20 degrees and +20 degrees. With this arrangement, it is not necessary to rotate the wafer, and 11 201110363 can collect spatial information. The entire inspection process is fully automated and controlled by controller 8. Automatic control also includes automatic picking that can be selectively or in conjunction with wafer set 16 auto-transfer, carrier auto-rotation, and automatic image analysis and damage to wafer inspection. Figures 5a-5c showing the camera 6 for further screen capture and editing of the wafer set 16 are further illustrated, in which a plurality of (greater than 1 〇〇) elements consisting of the wafer set 16 are stacked in a horizontal direction, in the illustration This is the 175 component (wafer 2 of Figures 5a, 5b and the solar cell of Figure 5c), the common dimensions are indicated in the drawing, the length/width of the component is about 156 mm, and the height of the entire wafer set 16 is about 35 mm. Figure 5a shows a wafer set 16 of wafers 2 in which a plurality of wafers 2 exhibit impurities 22, i.e., undesired impurities or foreign matter, which are caused by defects in the material contained in the wafer. These impurities are easily identified with the aid of the black field. Impurities 22 may appear in different types, they may only appear in one or a few wafers, but may also be present in all wafers. Figure 5b also shows a side view of the wafer set 16 of wafers 2, with some of the wafers 2 having small cracks 20. The figure below shows an enlarged view. The horizontal black line in the picture is the small crack 20 in the wafer 2. In the lower view of the enlarged view, we can see three damaged wafers 2. 5c and 5b, a side view of the wafer set 16 is shown. The vertical black line seen in the above picture is the copper bar of the battery, which is the battery's energizing device. As can be seen clearly by the enlarged view in the figure below, the position of the shelter 20, 22 can be easily identified by the finished/printed/coated solar cell using the detection method described here. In the enlarged illustration, it can be seen that there is a small crack in the solar cell. The height of this small crack 20 is approximately the same as the thickness of the solar cell, generally about 200 um ° 12 201110363. The side detection method described in the ray perspective can be used to test different situations: "" - Wafer inspection, especially for incoming inspection of unprocessed solar cell production lines at the end of the wafer production line, the wafer-to-wafer 2 is inspected on the conveyor belt 12 of the second production line. Further, the wafers 2 composed of the wafers 2 are combined to be inspected at the beginning of the line conveyor and the pair of terminal (unprocessed) sheets. When this inspection is performed, a plurality of wafer groups 16 are formed. - Examine the wafers that have been made into semi-finished or finished products. This test can be carried out on the production line of solar cells, or at the beginning of the production of solar module production lines or in the assembly process, that is, the production line of electronic series solar cells, that is, placing these controversial solar cells Before the solar module carrier is based on the foundation. Inspection of a wafer set 16 consisting of a single wafer 2, these single wafers have been processed into semi-finished or finished solar cells. Compared to the vertical fluoroscopy method, the side ray fluoroscopy method described herein has the following advantages: One greatly increases the throughput of the material, that is, the detection device can detect more single wafers per time unit, In particular, since a plurality of individual wafers 2 within the wafer set 16 can be simultaneously inspected, the throughput of the material is increased by about one factor. A semi-finished or finished (printed) solar cell can also be detected using this test method. A comparison can be made to distinguish between small cracks and polycrystalline grain boundaries. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1: Simple top view of the detecting device 13 201110363 Fig. 2: Side view of the detecting device of Fig. 1 Fig. 3: Schematic illustration of the transmission of the light side. Fig. 4 ac: 晶片 of the chip set received by the camera from both sides FIG. 5a is a schematic view of the wafer, and the side of the wafer set is received, and several of the wafers are contaminated. Fig. 5b. The face of the wafer set is received by the facet' where several cracks appear in several wafers. Figure 5c: Small cracks in the battery that is received on the side of the solar cell. [Description of main components] 1 detection device 2 wafer 2' damaged wafer 2b narrow side surface 4 light source 5 optical axis 6 camera 8 controller 10 carrier 12 conveyor belt 14 transport pack 16 wafer set 18 aperture 20 small crack noisy皙nl environmental medium refractive index π2 wafer refractive index 2a wide side