CN116539525A - Device and method for inspecting internal defects of electronic component - Google Patents
Device and method for inspecting internal defects of electronic component Download PDFInfo
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- CN116539525A CN116539525A CN202211447175.8A CN202211447175A CN116539525A CN 116539525 A CN116539525 A CN 116539525A CN 202211447175 A CN202211447175 A CN 202211447175A CN 116539525 A CN116539525 A CN 116539525A
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- 230000007547 defect Effects 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000007689 inspection Methods 0.000 claims description 14
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 3
- 238000010330 laser marking Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 13
- 238000010586 diagram Methods 0.000 description 5
- 101100510671 Rattus norvegicus Lnpep gene Proteins 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004378 air conditioning Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8809—Adjustment for highlighting flaws
Abstract
The invention relates to a device (1) and a method (2) for inspecting internal defects of an electronic component (101), comprising: an image capturing unit (102), the electronic device (101) being located within a field of view (FOV) of the image capturing unit (102); and at least one infrared light source (104, 106, 107); wherein the image capturing unit (102) and the infrared light source (104, 106, 107) are arranged at an angle of 0 to 360 degrees to the respective horizontal plane (ICHP, IRHP), whereby the infrared light source (104, 106, 107) is capable of illuminating at least one internal defect (108) of the electronic component (101); and the electronic component (101) is arranged at an angle of 0 degrees to its horizontal plane (ECHP).
Description
Technical Field
The invention relates to a device and a method for checking internal defects of an electronic element, comprising the following steps: an image capturing unit, the electronic device being located in the field of view of the image capturing unit; and at least one infrared light source; wherein the image capturing unit and the infrared light source are disposed at an angle of 0 to 360 degrees with respect to the respective horizontal planes, so that the infrared light source can illuminate at least one internal defect of the electronic component, and the electronic component is disposed at an angle of 0 degrees with respect to the horizontal plane thereof.
Background
Die backside chipping is a failure mechanism where chipping occurs along the edges of the die backside after sawing the wafer. Thus, the back side of the die will have rough edges due to small notches that physically break and fall off from many places on the back side edge. This evidence, indirectly, suggests that the sawing operation is very stressed and may subsequently lead to die cracking. Improper placement of the device may inadvertently force down on the die and sever a portion thereof. Therefore, signs of backside chipping after sawing of the wafer must be resolved quickly.
Nikoonahad et al US5883710a discloses a high sensitivity and high throughput surface inspection system that directs a focused beam of light at a complementary angle of incidence (grazing angle) to a surface to be inspected. A relative motion is induced between the beam and the surface such that the beam scans a scan path that covers substantially the entire surface and light scattered along the path is collected for detecting anomalies. The scan path includes a plurality of arrays of linear scan path segments. The focused beam irradiates a surface area between 5-15 microns wide, and the system is capable of inspecting more than about 40 wafers 150 mm in diameter (6 inch wafers), more than about 20 wafers 200 mm in diameter (8 inch wafers), or more than about 10 wafers 300 mm in diameter (12 inch wafers) per hour. However, US5883710a is directed to surface defect inspection, and the present invention is to detect the presence or absence of internal defects in a semiconductor device. In addition, the present invention can identify and distinguish between surface defects and internal defects.
Further, john s.batch discloses a system and method for inspecting the surface of a semiconductor wafer in US 4740708A. The system and method are directed to determining that particulate contaminants on a surface have been substantially removed during the fabrication of integrated circuits. The wafer is advanced in a first direction and optically scanned in a second direction perpendicular to the first direction to record the intensity of light normally reflected from the wafer surface according to the position on the scan line. The high intensity reflection indicates a smooth plane suitable for inspection of particles therein by integrating hemispheres and a plurality of photosensors. The weak reflection indicates undulating and patterned areas that are detrimental to particle inspection of the wafer surface. The second scan is laterally offset to compensate for the movement of the wafer in order to rescan the same line as the first scan. During the second scan, the light sensor in the integrating sphere is turned on and off at the appropriate checkpoint determined by the first scan. This approach also limits US5883710a because the system and method cannot check and detect the presence of internal defects, such as microcracks.
Therefore, if an apparatus and method for inspecting internal defects of an electronic device can inspect the electronic device using infrared illumination projections of different angles, and have the image capturing unit oriented toward the electronic device at different angles, it would be advantageous to alleviate these defects, the image capturing unit and the infrared light source being tilted at angles of 0 to 360 degrees with respect to the respective horizontal planes.
Disclosure of Invention
It is therefore a primary object of the present invention to provide an apparatus and method for inspecting an electronic component for internal defects, which are capable of distinguishing between surface defects and internal defects.
It is another object of the present invention to provide an apparatus and method for inspecting internal defects of electronic components, which can generate a significant contrast between defective areas and non-defective areas for image processing.
It is still another object of the present invention to provide an apparatus and method for inspecting internal defects of an electronic component, which can reduce an override rate.
It is still another object of the present invention to provide an apparatus and method for inspecting internal defects of electronic components, wherein the method can improve throughput.
Other further objects of the invention will become apparent upon an understanding of the following detailed description of the invention or upon use of the invention in practice.
The following is a detailed description of the preferred embodiments according to the present invention:
an apparatus for inspecting an internal defect of an electronic component, comprising:
an image capturing unit, the electronic device being located in the field of view of the image capturing unit; and
at least one infrared light source;
the image capturing unit and the infrared light source are inclined at an angle of 0 to 360 degrees with respect to the respective horizontal planes, so that the infrared light source can illuminate at least one internal defect of the electronic component; and is also provided with
The angle of the electronic component with respect to its horizontal plane is 0 degrees.
In another embodiment of the present invention, there is provided:
a method of inspecting an electronic component for internal defects, comprising the steps of:
(i) Transferring the electronic component from a first station to an inspection station;
(ii) Checking the first side of the electronic device through an image capturing unit matched with at least one infrared light source;
(iii) Rotating the image capturing unit and the infrared light source along their respective horizontal planes, and inspecting the second side of the electronic device through the image capturing unit after the infrared light source and the image capturing unit rotate;
(iv) Repeating step (iii) to rotate the image capturing unit and the Infrared (IR) light source along their respective horizontal planes, and after the rotation of the IR light source and the image capturing unit, inspecting the second side of the electronic device by the image capturing unit to inspect the four sides of the electronic device; and
(v) Transferring the electronic component to a second station;
the image capturing unit and the infrared light source are tilted at an angle of 0 to 360 degrees with respect to the respective horizontal planes, so that the infrared light source is capable of illuminating at least one internal defect of the electronic component, the internal defect being caused by the cutting and assembling process; and
the angle of the electronic component with respect to its horizontal plane is 0 degrees.
Drawings
Other aspects of the invention and advantages thereof will be appreciated upon study of the detailed description taken in conjunction with the accompanying drawings, wherein:
FIG. 1-A shows an exemplary schematic view of the present invention, wherein the image capturing unit and the infrared light source face the first surface of the electronic device, and the infrared light source is positioned on a sidewall of the electronic device;
FIG. 1-B shows a schematic view of the present invention, wherein the image capturing unit and the infrared light source face the first surface of the electronic device, and the infrared light source is located on the other side wall of the electronic device;
FIG. 1-C shows another schematic diagram of the present invention, in which the image capturing unit and the infrared light source face the first surface of the electronic device, and a mirror faces the second surface of the electronic device;
FIG. 1-D shows another schematic diagram of the present invention, wherein the image capturing unit is embedded with an embedded infrared light source facing the first surface of the electronic device, and a reflecting mirror facing the second surface of the electronic device;
FIG. 1-E shows another schematic view of the present invention, wherein an image capturing unit and an infrared light source face a first surface of the electronic device, one of the infrared light sources is located at a front view of the electronic device, the other two infrared light sources are located on a left side wall and a right side wall of the electronic device, respectively, and a reflecting mirror faces a second surface of the electronic device;
FIG. 2 is a flow chart of a method for detecting internal defects in an electronic component according to the present invention;
fig. 3-a shows a schematic diagram of the present invention for detecting surface defects of an electronic component.
FIG. 3-B is another schematic diagram of the present invention for inspecting electronic components for surface defects; a kind of electronic device with high-pressure air-conditioning system
Fig. 3-C shows a schematic diagram of a high-magnification microscopic image of the surface defect of the detection electronic component of the present invention.
Detailed Description
In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the invention. However, it will be understood by those of ordinary skill in the art that the present invention may be practiced without these specific details. In other instances, well-known methods, procedures and/or components have not been described in detail so as not to obscure the present invention.
The invention will be more clearly understood from the following description of embodiments, given by way of example only with reference to the accompanying drawings, which are not drawn to scale.
As used in this disclosure and the claims appended hereto, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise.
Throughout the disclosure and claims of this specification, the word "comprise" and variations of the word, such as "comprises" and "comprising", means "including but not limited to", and is not intended to exclude, for example, other elements, integers or steps. "exemplary" means "exemplary" and is not intended to convey an indication of a preferred or ideal embodiment, such as "is not used in a limiting sense, but for explanatory purposes.
The invention claims a device (1) for inspecting an internal defect of an electronic component (101), comprising an image capturing unit (102), wherein the electronic component (101) is located in a field of view of the image capturing unit (102), and the image capturing unit (102) faces a first surface (114) of the electronic component (101) to capture an image of the internal defect (108). The device further comprises at least one infrared light source (104, 106, 107), wherein the image capturing unit (102) and the infrared light source (104, 106, 107) are tilted at an angle of 0 to 360 degrees with respect to the respective horizontal plane (ICHP, IRHP) (e.g. the tilt angle (x°) of the image capturing unit (102) with respect to the horizontal plane (ICHP) and the tilt angle (y°) of the infrared light source (104, 106, 107) with respect to the horizontal plane (IRHP)), whereby the infrared light source (104, 106, 107) is capable of illuminating at least one internal defect (108) of the electronic component (101). By having this arrangement, different layers of the electronic component (101) can be inspected and detected. The electronic component (101) is arranged at an angle of 0 degrees to its horizontal plane (ECHP). The different placement and configuration of the image capturing unit (102) and the infrared light sources (104, 106, 107) are shown in fig. 1-a to 1-E.
Reference is made to fig. 1-a and 1-B, which are schematic illustrations of detecting internal defects (108), such as microcracks or internal cracks, in an electronic component (101). The image capturing unit (102) and the infrared light source (104, 106, 107) face a first surface (114) of the electronic component (101), wherein the image capturing unit (102) and the infrared light source (104, 106, 107) are tilted at an angle of 0 to 360 degrees with respect to a respective horizontal plane (ICHP, IRHP), whereby the infrared light source (104, 106, 107) is capable of illuminating at least one internal defect (108) of the electronic component (101). The electronic component (101) is at an angle of 0 degrees to its horizontal plane (ECHP). The infrared light source (104, 106, 107) comprises a front side infrared light source (104), a side infrared light source (106, 107) or a combination thereof. The side infrared light source (106, 107) may be located on the right side of the electronic component (101) as shown in fig. 1-a, or may be located on the left side of the electronic component (101) as shown in fig. 1-B. The first surface (114) refers to the backside of the electronic component (101), while the second surface (116) comprises the bump side of the electronic component (101).
Referring to fig. 1-C, another configuration of the image capturing unit (102) and the front side infrared light source (104) together with a mirror (118) and at least one back side infrared light source (110) is shown. In this configuration, the image capturing unit (102) and the front-side infrared light source (104) face the first surface (114) of the electronic component (101) and are tilted at an angle of 0 to 360 degrees with respect to the respective horizontal planes (ICHP, irap). Furthermore, the reflector (118) and the backside infrared light source (110) face the second surface (116) of the electronic component (101), and the reflector (118) is parallel to the electronic component (101) and located between the electronic component (101) and the backside infrared light source (110). The backside infrared light source (110) is tilted from 0 to 360 degrees relative to its horizontal plane (BSHP). The mirror (118) serves as a noise filtering means to obtain better quality images for infrared inspection processing. Alternatively, an embedded front side infrared light source (112) is embedded into the image capture unit (102), whereby the image capture unit (102) and the embedded front side infrared light source (112) operate together as a single unit, as shown in fig. 1-D.
Referring to fig. 1-E, another configuration of the present invention is schematically shown. A front side infrared light source (104) and an image capturing unit (102) face a first surface (114) of the electronic component (101), and a mirror (118) faces a second surface (116) of the electronic component (101). In addition, one side infrared light source (106) is located on the right side of the electronic component (101), and the other side infrared light source (107) is located on the left side of the electronic component (101). The front side infrared light source (104), the image capturing unit (102) and the side infrared light sources (106, 107) are tilted at an angle of 0 to 360 degrees with respect to the respective horizontal planes (ICHP, irap).
Referring to fig. 2, a method (2) of inspecting an electronic component (101) for internal defects according to the present invention is shown. (i) Transferring the electronic component (101) from a first station to an inspection station (step 201); (ii) The image capturing unit (102) then checks a first side of the electronic component (101) together with at least one infrared light source (104, 106, 107) (step 203); (iii) Rotating the image capturing unit (102) and the infrared light source (104, 106, 107) along their respective horizontal planes, and inspecting the second side of the electronic component (101) through the image capturing unit (102) after the rotation of the infrared light source (104, 106, 107) and the image capturing unit (102) (step 205); repeating step (iii), i.e. rotating the image capturing unit (102) and the infrared light source (104, 106, 107) along their respective horizontal planes, and after the rotation of the infrared light source (104, 106, 107) and the image capturing unit (102), inspecting the second side of the electronic component (101) through the image capturing unit (102) to inspect the four sides of the electronic component (101) (step 207); and (v) transferring the electronic component (101) to a second station (step 209). The image capturing unit (102) and the infrared light source (104, 106, 107) are tilted at an angle of 0 to 360 degrees with respect to the respective horizontal plane (ICHP, IRHP), whereby the infrared light source (104, 106, 107) is capable of illuminating at least one internal defect (108) of the electronic component (101), and the electronic component (101) is tilted at an angle of 0 degrees with respect to its horizontal plane (ICHP). Internal defects (108) are caused by the cutting and assembly process. The infrared light source (104, 106, 107) comprises a front side infrared light source (104), a side infrared light source (106, 107) or a combination thereof.
In addition, the method (2) further comprises the step of picking up the electronic component (101) by a pick-and-place module and subsequently placing the electronic component (101) at the inspection station for internal defect inspection, before (i) transferring the electronic component (101) from the first station to the inspection station (step 201). The first station may be a pick-and-place station, a laser marking station, a test station, or the like. The second station includes a roll of tape, a tray, a visual inspection station, and the like. The step of filtering noise of the electronic component (101) through a mirror (118) is optionally included in the method (2).
Referring to fig. 3-a, there is shown an image sample (3A) of the present invention when a surface defect is detected using the apparatus (1) and the arrangement described above. The image shows a contrast of the upper white line, which represents a surface defect, i.e. chipping (301) of the back side of the die. Fig. 3-B presents another image sample of the present invention for detecting surface defects, while fig. 3-C shows a high magnification microscopic image that does not produce a deeper contrast on the upper white line. Referring to fig. 3-a and 3-B, the image sample produced by the device (1) is capable of producing significant contrast for image processing and is then capable of distinguishing between surface defects and internal defects. Therefore, the false-killing rate of the electronic component (101) can be reduced.
Reference numerals illustrate:
1: device and method for controlling the same
101: electronic component
102: image capturing unit
104: front side infrared light source
106: side infrared light source
107: side infrared light source
110: backside infrared light source
112: front side infrared light source
114: a first surface
116: a second surface
118: reflecting mirror
2: method of
3A: image sample
301: die backside chipping
BSHP: horizontal plane
IRHP: horizontal plane
ICHP: horizontal plane
X DEG: inclination angle
Y DEG: inclination angle
Claims (12)
1. An apparatus (1) for inspecting an electronic component (101) for internal defects, comprising:
an image capturing unit (102), the electronic device (101) being located within a field of view of the image capturing unit (102); and
at least one infrared light source (104, 106, 107);
the method is characterized in that:
the image capturing unit (102) and the infrared light source (104, 106, 107) are arranged at an angle of 0 to 360 degrees to the respective horizontal plane (ICHP, IRHP), whereby the infrared light source (104, 106, 107) is capable of illuminating at least one internal defect (108) of the electronic component (101); and
the electronic component (101) is arranged at an angle of 0 degrees to its horizontal plane (ECHP).
2. The device (1) for inspecting an internal defect of an electronic component (101) according to claim 1, wherein the infrared light source (104, 106, 107) comprises a front side infrared light source (104), a side infrared light source (106, 107) or a combination thereof.
3. The device (1) for inspecting an internal defect of an electronic component (101) according to claim 1, wherein the device (1) further comprises at least one back-side infrared light source (110), the back-side infrared light source (110) being tilted at an angle of 0 to 360 degrees with respect to its horizontal plane (BSHP).
4. The apparatus (1) for inspecting an internal defect of an electronic device (101) according to claim 1 or 2, wherein the image capturing unit (102) comprises an embedded front-side infrared light source (112) or an external front-side infrared light source (104).
5. The apparatus (1) for inspecting an internal defect of an electronic component (101) according to claim 1, wherein the electronic component (101) comprises a first surface (114) and a second surface (116), the first surface (114) comprising the backside of the electronic component (101) and the second surface (116) comprising the bump side of the electronic component (101).
6. The device (1) for inspecting an internal defect of an electronic component (101) according to claim 1 or 2, wherein the device (1) further comprises a mirror (118), the mirror (118) facing the second surface (116) of the electronic component (101) and being parallel to the electronic component (101).
7. A method (2) of inspecting an electronic component (101) for internal defects, comprising the steps of:
(i) Transferring the electronic component (101) from a first station to an inspection station;
(ii) Inspecting the first side of the electronic component (101) through an image capturing unit (102) in combination with at least one infrared light source (104, 106, 107);
(iii) Rotating the image capturing unit (102) and the infrared light source (104, 106, 107) along their respective horizontal planes, and inspecting the second side of the electronic component (101) through the image capturing unit (102) after the rotation of the infrared light source (104, 106, 107) and the image capturing unit (102);
repeating the step (iii) to inspect four sides of the electronic component (101); and
(v) Transferring the electronic component (101) to a second station;
the method is characterized in that:
the image capturing unit (102) and the infrared light source (104, 106, 107) are tilted at an angle of 0 to 360 degrees with respect to the respective horizontal plane (ICHP, IRHP), whereby the infrared light source (104, 106, 107) is capable of illuminating at least one internal defect (108) of the electronic component (101), which internal defect is caused by the cutting and assembly process; and
the electronic component (101) is at an angle of 0 degrees to its horizontal plane (ECHP).
8. The method (2) of inspecting an electronic component (101) for internal defects according to claim 7, wherein the method (2) further comprises the step of picking up the electronic component (101) through a pick-and-place module and subsequently placing the electronic component (101) at the inspection station for internal defect inspection prior to the step (i).
9. The method (2) of inspecting an electronic component (101) for internal defects according to claim 7, wherein the first station comprises a pick-and-place station, a laser marking station, or a testing station.
10. A method (2) of inspecting an electronic component (101) for internal defects according to claim 7, wherein the second station comprises a tape, tray or vision inspection station.
11. The method (2) of inspecting an electronic component (101) for internal defects according to claim 7, wherein the method (2) further comprises the step of filtering noise of the electronic component (101) through a mirror (118).
12. The method (2) of inspecting an electronic component (101) for internal defects according to claim 7, wherein the infrared light source (104, 106, 107) comprises a front side infrared light source (104), a side infrared light source (106, 107), or a combination thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211447175.8A CN116539525A (en) | 2022-11-18 | 2022-11-18 | Device and method for inspecting internal defects of electronic component |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211447175.8A CN116539525A (en) | 2022-11-18 | 2022-11-18 | Device and method for inspecting internal defects of electronic component |
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| CN116539525A true CN116539525A (en) | 2023-08-04 |
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| CN202211447175.8A Pending CN116539525A (en) | 2022-11-18 | 2022-11-18 | Device and method for inspecting internal defects of electronic component |
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| TW202144768A (en) * | 2020-05-20 | 2021-12-01 | 馬來西亞商正齊科技有限公司 | An apparatus for detecting internal defects in an electronic component and method thereof |
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2022
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| US4740708A (en) * | 1987-01-06 | 1988-04-26 | International Business Machines Corporation | Semiconductor wafer surface inspection apparatus and method |
| US5883710A (en) * | 1994-12-08 | 1999-03-16 | Kla-Tencor Corporation | Scanning system for inspecting anomalies on surfaces |
| JP2004246171A (en) * | 2003-02-14 | 2004-09-02 | Asahi Glass Co Ltd | Defect detection method and device of transparent plate |
| CN101127315A (en) * | 2006-08-14 | 2008-02-20 | 雅马哈株式会社 | Method and apparatus for inspection of wafer and semiconductor device |
| US8643833B1 (en) * | 2012-08-31 | 2014-02-04 | National Applied Research Laboratories | System for inspecting surface defects of a specimen and a method thereof |
| JP2015040835A (en) * | 2013-08-23 | 2015-03-02 | 旭硝子株式会社 | Defect inspection device and defect inspection method for transparent tabular body |
| TW202144768A (en) * | 2020-05-20 | 2021-12-01 | 馬來西亞商正齊科技有限公司 | An apparatus for detecting internal defects in an electronic component and method thereof |
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