CN1167342A - Silicon semiconductor diode chip of all tangent plane junction glass passivation and making method - Google Patents
Silicon semiconductor diode chip of all tangent plane junction glass passivation and making method Download PDFInfo
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- CN1167342A CN1167342A CN 96107992 CN96107992A CN1167342A CN 1167342 A CN1167342 A CN 1167342A CN 96107992 CN96107992 CN 96107992 CN 96107992 A CN96107992 A CN 96107992A CN 1167342 A CN1167342 A CN 1167342A
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Abstract
The present invention relates to a silicon semiconductor diode chip whose p-N junction section possesses passive glass package. It is characterized by that the whole P-N junction section of the semiconductor chip is covered with passive glass package layer, in which for every chip, an individual glass package body is prepared, and individually sintered, so that the whole section of the P-N junction is packaged with passive glass, so as to can easily obtain the good forward and reverse electric characteristics and higher reliability, and can be favourable for secondary processing and forming. Besides, said invention also provides a method for making said silicon semiconductor diode chip.
Description
The present invention relates to a kind of silicon semiconductor diode chip and manufacture method thereof.Relate in particular to a kind of Si semiconductor rectifier diode chip and manufacture method thereof of the P-N of having knot omniplance glass book jacket.This P-N knot omniplance book jacket silicon semiconductor diode chip uses the rectifier diode silicon wafer of making by the standard diffusion technology, through being cut into independent diode chip for backlight unit, after cut surface carried out chemistry erosion mill and oxidation processes, adhere to the agent of passivation glass book jacket, and burn till glass book jacket film and make.
Industrial quarters one reaches the purpose of making semiconductor rectifier diode to adopting most economical effective standard diffusion technology by the mode of making the rectifier diode disk earlier.The general method that adopts is on the two sides of the single crystal wafer of low concentration impurity, spreads pentad impurity (as phosphorus, arsenic etc.) and triad impurity (as boron, aluminium etc.) respectively, to make the disk that tool P-N knot reaches the positive and negative electrode face of low surface resistivity.Suitably form metal film (as nickel, aluminium etc.) in the surface at disk afterwards, be used for being connected with electric lead piece with ohmic contact.Different metal films is applicable to the welding processing of different modes respectively, and for example nickel or nickeline, nickel gold plated film are applicable to the plumbous class wlding of tin of soft soldering processing, and the aluminium plated film is applicable to the aluminium welding processing of hard solder mode.
Silicon wafer according to required rectifier diode chip specification, is cut into the chip of a certain size and shape, and cut surface carried out chemistry erosion grind, to remove mechanical injuries and the pollution that cutting is caused.Form silicon dioxide film on the silicon crystal surface, to obtain good reverse electrical characteristic.To the P-N tie region on the cut surface of handling and near carry out the passivation book jacket, promptly finish the processing of chip part.
To the book jacket of the exposed tangent plane of diode chip for backlight unit P-N knot, mainly contain three kinds of designs and processing method now:
1. connect the mode that the semi-finished product finished are processed with electric lead piece soft soldering structure: the diode disk is cut into chip, with chip and the welding of electric lead piece, become the semi-finished product that are welded into, carry out the chemical treatment of chip section again and carry out the passivation book jacket with the agent of resin type book jacket.All belong to this mode as the electrode wafer rectifier diode chip bag (Sand-wich Cell Construction) of Westinghouse Electric's early development, axial lead plastic mo(u)lding encapsulation (Axial LeadPlastic Molded Package) etc.This mode belongs to more traditional manufacture method.
2. glass book jacket type diode: Fig. 1. show the flow chart of this glass book jacket type diode fabricating method.This General Electric Apparatus Co.(U.S.A.) that is designed to develops, and has obtained patent.The disk (101) of P-N knot diffusion is finished in preparation, and disk is done plated film processing (102), will plate the rectifier diode disk of aluminium film, mode such as cuts with the sandblast mill, is cut into the truncated cone chip.Be main mixed liquor with hydrofluoric acid and nitric acid again, under low temperature, carry out chemistry erosion mill, and form silicon dioxide film (103) in wafer surface.Chip through chemical treatment is finished welds with electric lead piece, makes semi-finished product (104).If the electrode that uses the material of matched coefficients of thermal expansion such as tungsten or molybdenum to make is a wlding with the aluminium film then, does hard solder and connect; And generally use the electric lead piece of copper, and then can use copper, silver, phosphorus alloy wlding, be connected do hard solder with electrode.Carry out the secondary chemical treatment (105) of chip tangent plane afterwards, and be coated with passivation glass book jacket agent (106), reburn and form the book jacket layer, promptly finish the making (107) of glass book jacket type diode.This mode be with glass as passivation and book jacket material, belong to advanced traditional method for making.
3. ditch shape P-N ties hemisection surface glass book jacket type diode chip for backlight unit: Fig. 2 shows the manufacture method flow chart of hemisection surface glass book jacket type diode chip for backlight unit.As shown in the figure, the Si semiconductor disk (201) of P-N type diffusion is finished in preparation, disk is done (202) after the oxidation processes, again with photoresist coating disk (203).To develop and to clean the photoresist (204) of removing each chip edge part, and there is the zone of photoresist to carry out selective local chemical etching (205) to uncoated, form P and worn groove, the P-N knot is showed out, single chip is in the semi-finished product of hemisection form, and a plurality of chip base portions still link to each other and are the disk form, carries out Passivation Treatment and glass book jacket (206) at the exposed position of P-N knot face of this hemisection type disk, sintered glass (207) is finished the book jacket processing of chip hemisection face.At electrode surface metal-coated membrane (208) and with chip separation cuts (209), make glass book jacket rectifier diode chip at last.This mode is generally called glass book jacket sheet (Glass Passivated Pellet), is called for short GPP.Because of in manufacturing process, only partly imposing the passivation glass book jacket, so also can be described as " ditch shape P-N knot tangent plane glass book jacket type " chip at P-N knot ditch shape tangent plane.Fig. 3 represents to make through the GPP method vertical section structural representation of chip.
GPP has better secondary operations applicability, and therefore widely various rectifier diode component manufacturers adopts.Rectifier bridge etc. for example.In addition, this chip of the also many employings of small outline diode (SmallOutline diode is called for short SOD) rectifier diode encapsulates through secondary operations and makes.
As everyone knows,, and can make and meet general purpose chip, thereby become the best manufacture method at present, but its shortcoming is still many with book jacket silicon rectifying diode chip because of the GPP cost is not high.
For example, because the GPP tangent plane is the hemisection form of P face opening, thereby the corner cut of its P-N knot face belongs to negative corner cut type.This structure is applying under the situation of revers voltage, and the depletion region of formation can cause the expansion of the reverse electric field in tangent plane edge place.In design, must keep enough big depletion region space.Consequently must use the larger area chip, its forward bearing power could be suitable with the chip made from vertical incision method or positive angle patterning method.So will improve the cost of manufacture of chip.In fact, the one ampere of square chip that uses general GPP method to make, P face area is 38mil * 38mil, and N face area is 55mil * 55mil, and its effective area is (38 * 38)/(55 * 55), is about 47%.
Simultaneously, the chip that the GPP method is made also has the shortcoming that is difficult for obtaining the higher reverse withstand voltage properties.
In addition, use the GPP method, need repeatedly be coated with photoresist, develop and go the program of photoresist, development to disk, and can't utilize traditional cutting technique that chip is cut, cause the equipment needed thereby costliness, the operating cost height, so that its manufacturing cost is also high.For example, after groove processing (205) is finished, when the groove position is imposed book jacket vitrifying agent (206), more feasible mode is the line of cut of each chip chamber in the coat trench with photoresist, and apply the agent of glass book jacket in the trench portions of uncoated photoresist, afterwards, remove photoresist so that cut.In addition, in the technical process of electrode surface metal-coated membrane (209), the best way also is to cover the groove position with photoresist.For making high performance GPP chip, need carry out repeatedly photoresist coating process.
At last, the chip of making in this way, when separation cuts, the mechanical damage of hanking glass-film unavoidably forms microcrack and causes stress to be concentrated.This can become very serious job failure source in use.Though through making great efforts for many years, to the improvement of the above shortcoming, effect is still very limited.
The object of the present invention is to provide a kind of silicon semiconductor diode chip of novelty, this chip has the exposed P-N knot omniplance of the book jacket to the P electrode surface from the N electrode surface.
The present invention also aims to provide a kind of manufacture method of silicon semiconductor diode chip of novelty, under the prerequisite of silicon semiconductor diode being carried out whole P-N knot omniplance book jackets, still can save chip area, reduce production costs.
Another object of the present invention also is to provide a kind of manufacture method that book jacket P-N ties the silicon semiconductor diode chip of omniplance that has of simplification, and silicon semiconductor diode is carried out the omniplance book jacket, can obtain good electric property.
The Si semiconductor rectifier diode chip that purpose of the present invention especially is to provide a kind of P-N knot omniplance passivation glass book jacket can use simple inexpensive equipment, produces in enormous quantities; Utilize raw material with low cost, simple process steps is made the product that multiple metallic electrode face and performance are higher than prior art.
Silicon semiconductor diode chip and manufacture method thereof according to disclosed P-N knot omniplance passivation glass book jacket, can use passivation glass book jacket layer, covering in whole tangent planes of chip P-N knot, and each chip is prepared an independent glass book jacket layer body, independent sintering, avoid the damage of the glass book jacket layer that caused when the separation cuts as GPP method chip, and can obtain higher reverse electric property.The present invention also provides the method for the silicon semiconductor diode chip of this novel structure of a kind of a large amount of manufacturings.
Silicon semiconductor diode chip with P-N knot omniplance passivation glass book jacket of the present invention, its tangent plane can be a tangent angle, can help the raising of counter withstand voltage performance and the reduction of leakage current.
By following explanation, can be more clearly visible above-mentioned and other purpose of the present invention and advantage with reference to accompanying drawing.
Fig. 1 shows the technological process of traditional glass book jacket type diode chip for backlight unit.
Fig. 2 shows the technological process of ditch shape P-N knot tangent plane glass book jacket type diode chip for backlight unit (GPP).
Fig. 3 shows the structural representation of the vertical section of the chip of making through the GPP method.
Fig. 4 shows the structural representation of vertical section that the present invention has the silicon semiconductor diode chip of P-N knot omniplance passivation glass book jacket.
Fig. 5 shows the technological process that the present invention has the silicon semiconductor diode chip of P-N knot omniplance passivation glass book jacket.
Fig. 6 shows the outside drawing at the embodiment material object of the present invention of 40 times of the viewed amplifications of microscopically.
Silicon semiconductor diode chip with P-N knot omniplance passivation glass book jacket of the present invention is according to existing technology, has finished the semiconductor rectifier diode disk of pentavalent and triad diffusion.Disk is after cutting, and its tangent plane is in the full cut-out form to the P face from the N face.Chip after the cutting on the full section of chip, is promptly being executed the agent of passivation glass book jacket from the N face on the full section to the P face, and is being heat-treated again through chemistry erosion mill and oxidation processes, makes glass book jacket agent cover layer sintering, can obtain.Have ohmic contact, the metal coating that is used for linking to each other with electrical fitting can have multiple choices, as aluminium, nickel, silver and gold etc.Metal film can be plated on two electrode surfaces of disk before chip cutting, also can plate after chip book jacket glass is made again.
Fig. 4 promptly represents the vertical section structural representation of the silicon semiconductor diode chip with P-N knot omniplance passivation glass book jacket made by the method for the invention.As shown in the figure, the tangent plane of described chip is in the full cut-out form to the P face from the N face, and whole P-N knot face is the passivation glass body institute book jacket of an independent sintering.
Fig. 5 represents the technological process of the silicon semiconductor diode chip of the P-N of having knot omniplance passivation glass book jacket of the present invention.According to Fig. 2 the manufacture method with silicon semiconductor diode chip of whole P-N knot face passivation glass book jackets of the present invention is described below.
At first, use existing processes earlier, prepare a rectifier diode disk (501) of finishing the diffusion of P-N knot, again this rectifier diode disk is carried out positive and negative electrode plated film processing (502).Wherein the metal coating of positive and negative electrode face can be the aluminium plated film, and nickel, silver coating or golden secondary film coating are to adapt to different needs.
To finishing the disk of metallization plated film, make chip (503) with suitable methods such as sandblast cutting or chemical etchings.Chip can cut into truncated cone, fillet square cone or fillet hexagon taper type, and other suitable shapes.Its frustum bottom is the P electrode surface.The cutting of non-tangent angle is applicable to the present invention too.
Again the chip that cuts is carried out chemistry erosion mill and oxidation processes (504).On using, if the chip of chromium-nickel-silver coating, then carry out alkali electroless erosion mill as the erosion grinding agent, and form silicon dioxide film at tangent plane with 10% the potassium hydroxide aqueous solution that boils.
After chip carried out chemistry erosion mill and oxidation processes, prepare a kind of 500 degree Celsius fully the hot plastic type adhesive (Binder) of burn off allocate the passivation glass powder, the adjustment (505) of formation book jacket layer.With locator chip is located,, impose passivation glass mediation paste (506) the whole tangent plane position of each independent chip P-N knot.Apply the mode that glass is adjusted, can utilize existing thermoplastics type's glue injection molding technology,, cast out a glass adjustment type spare at the whole peripheral tangent plane of each chip.Do burn off and vitrifying and burn till heat treatment (507), form passivation glass book jacket layer.So just, finished the making of the Si semiconductor rectifier diode chip of the P-N of having knot omniplance passivation glass book jacket of the present invention.
In the present invention, the book jacket layer of chip can cover the whole P-N knot tangent plane in chip, and each chip is prepared an independent glass book jacket layer body.In embodiment of the present invention, impose on the passivation glass book jacket agent at P-N knot tangent plane position, can be the blending paste of passivation glass powder and water or carrying agent (Vehicle Agent), or other suitable materials.
The chip of making through said method can be through follow-up detection, classification, encapsulation and make the commercial size product.Its profile can be disc, truncated cone, fillet square cone, fillet hexagon taper type or other suitable shapes.The finished product of finishing has slick and sly glass book jacket layer, helps following process, as automatic feed, locator location etc.
Chip after book jacket glass burns till, its whole P-N knot tangent plane is one deck passivation glass institute book jacket.Through microscopic examination, this glassy layer has no mechanical damage, does not have unfilled corner and microcrack.Fig. 6 is illustrated in the outside drawing in kind with Si semiconductor rectifier diode chip of omniplance passivation glass book jacket of the present invention of 40 times of the viewed amplifications of microscopically.
Silicon semiconductor diode chip of the present invention, whole P-N knot tangent plane be all with the passivation glass book jacket, and its tangent plane is in the full dissengaged positions to the P face from the N face, has splendid electrical characteristic and mechanical property.
In manufacturing process, owing to be to whole P-N knot tangent plane coating passivation glass, so the direction of P or N does not influence its making on the chip, is fit to produce in enormous quantities.And the described method of the embodiment of the invention is fit in enormous quantities the manufacturing.Other similar approach are also applicable to the present invention.
Silicon semiconductor diode chip with omniplance book jacket of the present invention, its tangent plane can be made into tangent angle, helps the raising of counter withstand voltage performance and the reduction of leakage current.Actual measurement shows, diode chip for backlight unit of the present invention to the raising of counter withstand voltage performance and the reduction of leakage current, has significant effect.Its reverse electrical characteristic is as shown in table 1.Show in the table that all more than 1200V, mean value is 1400V to the counter withstand voltage of all samples.
Diode chip for backlight unit of the present invention is because of using glass book jacket layer, and is independent sintered part, therefore can avoid the mechanical damage and the microcrack that use the GPP method to be caused.Has stress-retained few one big advantage simultaneously.
Table 1
| Test piece number (Test pc No.) | Revers voltage value (V) | Test piece number (Test pc No.) | Revers voltage value (V) |
| ????1 | ????1200 | ???11 | ????1450 |
| ????2 ????3 ????4 ????5 ????6 ????7 ????8 ????9 ????10 | ????1450 ????1600 ????1600 ????1250 ????1400 ????1450 ????1450 ????1300 ????1300 | ????12 ????13 ????14 ????15 ????16 ????17 ????18 ????19 ????20 | ????1250 ????1450 ????1300 ????1400 ????1600 ????1300 ????1450 ????1200 ????1600 |
Silicon semiconductor diode chip with omniplance book jacket of the present invention, because manufacture method is greatly simplified than prior art, can use simple inexpensive equipment to produce in a large number, be enough to reduce cost, make multiple metallic electrode surface and more existing more high performance product.Because of it has smooth glass book jacket layer,, also convenient especially as automatic feed, locator location etc. for following process.
Method of the present invention and the chip component of making, simple in structure owing to only comprise the metal film of chip itself, book jacket glass and necessity, can be widely used in various types of rectifier diodes and rectifier diode assembly, for example rectifier bridge etc.
It more than is explanation to the embodiment of silicon semiconductor diode chip with omniplance passivation glass book jacket of the present invention and manufacture method thereof, those skilled in the art are not difficult by above-mentioned explanation, understand spirit of the present invention, and derive different variations in view of the above.But only otherwise break away from spirit of the present invention, all within claim of the present invention.
Claims (10)
1. semiconductor diode chip assembly comprises:
One silicon semiconductor diode chip; And
One passivation glass book jacket spare; It is characterized in that:
The periphery of this semiconductor diode chip be from the N electrode surface to the P electrode surface, contain P-N knot aspect, be complete dissengaged positions; And
This passivation glass book jacket spare is covered in the whole of this semiconductor diode chip periphery.
2. semiconductor diode chip assembly as claimed in claim 1, its chips be shaped as truncated cone, square cone or hexagon taper type.
3. semiconductor diode chip assembly as claimed in claim 1, wherein the angle of the section of this chip and its N type layer is about 90 °.
4. semiconductor diode chip assembly as claimed in claim 1 also contains a metal coating and the metal coating at the N electrode surface at the P electrode surface.
5. semiconductor diode chip assembly as claimed in claim 4, the plated film of its chips P face or N face can be aluminium plated film, nickel, silver or golden secondary film coating.
6. method of making the semiconductor diode chip comprises:
The semiconductor diode disk size according to need of finishing the diffusion of P-N knot is cut into single chip, makes its P type layer, P-N knot and N type layer be exposed to the otch section;
The P-N knot omniplance of erosion mill process chip makes it be fit to carry out book jacket;
Coat the agent of passivation glass book jacket at its P-N knot omniplance position; And
Sintering processes is carried out in this glass book jacket agent, form book jacket spare;
It is characterized in that: this glass book jacket spare is formed at the whole of the exposed P-N knot of chip and section.
7. method as claimed in claim 6, its chips be shaped as truncated cone, square cone or hexagon taper type.
8. method as claimed in claim 6, the angle of the cut surface of its chips and chip N type layer is about 90 °.
9. method as claimed in claim 6, the P face and the N face that also are included in chip respectively form a metal coating.
10. method as claimed in claim 9, wherein the plated film of this P face or N face can be aluminium plated film, nickel, silver or golden secondary film coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN96107992A CN1074168C (en) | 1996-06-05 | 1996-06-05 | Silicon semiconductor diode chip of all tangent plane junction glass passivation and making method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN96107992A CN1074168C (en) | 1996-06-05 | 1996-06-05 | Silicon semiconductor diode chip of all tangent plane junction glass passivation and making method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1167342A true CN1167342A (en) | 1997-12-10 |
| CN1074168C CN1074168C (en) | 2001-10-31 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN96107992A Expired - Fee Related CN1074168C (en) | 1996-06-05 | 1996-06-05 | Silicon semiconductor diode chip of all tangent plane junction glass passivation and making method |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102800586A (en) * | 2012-08-28 | 2012-11-28 | 绍兴文理学院 | Design process for chip-type power diode |
| US8507306B2 (en) | 2009-09-28 | 2013-08-13 | Analog Devices, Inc. | Reduced stiction MEMS device with exposed silicon carbide |
| CN104201102A (en) * | 2014-08-28 | 2014-12-10 | 苏州启澜功率电子有限公司 | Fast recovery diode FRD chip and production process for same |
| CN104241122A (en) * | 2014-09-29 | 2014-12-24 | 广安市嘉乐电子科技有限公司 | Production method for sheet silicon-particle rectifier diodes |
| US9029179B2 (en) | 2012-06-28 | 2015-05-12 | Analog Devices, Inc. | MEMS device with improved charge elimination and methods of producing same |
| US9045328B2 (en) | 2011-12-20 | 2015-06-02 | Analog Devices, Inc. | Method for wafer-level surface micromachining to reduce stiction |
| CN104835894A (en) * | 2014-02-12 | 2015-08-12 | 智威科技股份有限公司 | Semiconductor diode chip and manufacturing method thereof |
| CN110890283A (en) * | 2019-11-29 | 2020-03-17 | 扬州杰利半导体有限公司 | Improved method for passivating diode glass |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102881587B (en) * | 2012-10-17 | 2015-03-25 | 如皋市大昌电子有限公司 | Laminated diode manufacturing process and chip sieve tray thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS535971A (en) * | 1976-07-06 | 1978-01-19 | Mitsubishi Electric Corp | Semiconductor device |
| US4168960A (en) * | 1978-04-18 | 1979-09-25 | Westinghouse Electric Corp. | Method of making a glass encapsulated diode |
-
1996
- 1996-06-05 CN CN96107992A patent/CN1074168C/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8507306B2 (en) | 2009-09-28 | 2013-08-13 | Analog Devices, Inc. | Reduced stiction MEMS device with exposed silicon carbide |
| US9045328B2 (en) | 2011-12-20 | 2015-06-02 | Analog Devices, Inc. | Method for wafer-level surface micromachining to reduce stiction |
| US9029179B2 (en) | 2012-06-28 | 2015-05-12 | Analog Devices, Inc. | MEMS device with improved charge elimination and methods of producing same |
| CN102800586A (en) * | 2012-08-28 | 2012-11-28 | 绍兴文理学院 | Design process for chip-type power diode |
| CN102800586B (en) * | 2012-08-28 | 2015-07-15 | 绍兴文理学院 | Design process for chip-type power diode |
| CN104835894A (en) * | 2014-02-12 | 2015-08-12 | 智威科技股份有限公司 | Semiconductor diode chip and manufacturing method thereof |
| CN104835894B (en) * | 2014-02-12 | 2017-11-07 | 智威科技股份有限公司 | Semiconductor diode chip and manufacturing method thereof |
| CN104201102A (en) * | 2014-08-28 | 2014-12-10 | 苏州启澜功率电子有限公司 | Fast recovery diode FRD chip and production process for same |
| CN104201102B (en) * | 2014-08-28 | 2017-12-12 | 苏州启澜功率电子有限公司 | A kind of fast recovery diode FRD chips and its manufacture craft |
| CN104241122A (en) * | 2014-09-29 | 2014-12-24 | 广安市嘉乐电子科技有限公司 | Production method for sheet silicon-particle rectifier diodes |
| CN104241122B (en) * | 2014-09-29 | 2017-05-10 | 广安市嘉乐电子科技有限公司 | Production method for sheet silicon-particle rectifier diodes |
| CN110890283A (en) * | 2019-11-29 | 2020-03-17 | 扬州杰利半导体有限公司 | Improved method for passivating diode glass |
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| Publication number | Publication date |
|---|---|
| CN1074168C (en) | 2001-10-31 |
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