CN116722061A - 一种电压控制的宽光谱锗硅探测器及其控制方法 - Google Patents
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Abstract
本发明公开了一种电压控制的宽光谱锗硅探测器及其控制方法，所述锗硅探测器包括自下而上依次设有的半导体衬底、P型重掺杂硅层、I型非掺杂本征硅层、N型重掺杂硅层、非掺杂本征锗层、P型重掺杂锗层，所述P型重掺杂硅层上设有与P型重掺杂硅层相连的金属接触电极一，所述P型重掺杂锗层上设有与P型重掺杂锗层相连的金属接触电极二，所述锗硅探测器在器件有源区形成PINIP型整体掺杂结构。将宽光谱光源垂直入射锗硅探测器根据入射波长光源不同被锗材料或硅材料吸收光子，通过控制锗硅探测器外部施加电压选择硅‑PIN光电探测器结构或者锗‑PIN光电探测器结构来实现电压控制的宽光谱探测，拓宽锗硅探测器应用领域。
Description
技术领域
本发明涉及光电探测器技术领域，特别涉及一种电压控制的宽光谱锗硅探测器及其控制方法。
背景技术
光电探测器是大多数光电子集成系统中作为接收信号端最为关键的部件。现如今，光通信、自动驾驶领域、医疗诊断等应用的快速发展不断刺激光电探测领域的需求，具体表现不仅是探测器在灵敏度及高速响应方面，还在探测器对宽光谱响应的能力。在现有的成熟应用中，光通信、增强成像、遥感、计量、农业、制药等都需要可见光及近红外光谱范围内的探测。然而传统设计的锗硅探测器由于锗的直接带隙是0.8 eV，只能有效的吸收1.1μm以上的光辐射，制约了硅基光电器件对于1.1μm以下的可见光波段的发展。且现有的硅基光电探测器主要进行单波段光谱探测，探测范围有限。
发明内容
本发明的目的在于提供一种电压控制的宽光谱锗硅探测器及其控制方法，以克服现有技术中的不足。
为实现上述目的，本发明提供如下技术方案：
本发明公开了一种电压控制的宽光谱锗硅探测器及其控制方法，所述锗硅探测器包括自下而上依次设有的半导体衬底、P型重掺杂硅层、I型非掺杂本征硅层、N型重掺杂硅层、非掺杂本征锗层、P型重掺杂锗层，所述P型重掺杂硅层上设有与P型重掺杂硅层相连的金属接触电极一，所述P型重掺杂锗层上设有与P型重掺杂锗层相连的金属接触电极二，所述锗硅探测器在器件有源区形成PINIP型整体掺杂结构。
作为优选的，所述P型重掺杂硅层相连的金属接触电极一与所述P型重掺杂锗层相连的金属接触电极二构成一组电极，通过控制电极外部施加电压选择使用硅-PIN光电探测器或锗-PIN光电探测器。
作为优选的，所述P型掺杂掺杂离子为B3+，所述N型掺杂掺杂离子为P5+或As5+。
作为优选的，所述锗硅探测在半导体衬底上制作，所述半导体衬底为硅、锗或SOI。
作为优选的，所述PINIP型整体掺杂结构中，P型重掺杂区与I型本征区之间存在P型轻掺杂区。
作为优选的，所述PINIP型整体掺杂结构中，N型重掺杂区与I型本征区之间存在N型轻掺杂区。
作为优选的，所述金属电极一和金属电极二的材料为Al、Cu或Au。
本发明公开了一种基于上述锗硅探测器的光谱范围控制方法，通过控制施加给金属电极的电压，切换使用硅-PIN光电探测器和锗-PIN光电探测器，根据硅材料和锗材料吸收光谱能量的范围，实现所述锗硅探测器可探测的光谱范围的切换。
本发明的有益效果：本发明一种电压控制的宽光谱锗硅探测器及其控制方法，将宽光谱光源垂直入射锗硅探测器根据入射波长光源不同被锗材料或硅材料吸收光子，通过控制锗硅探测器外部施加电压选择硅-PIN光电探测器结构或者锗-PIN光电探测器结构来实现电压控制的宽光谱探测，拓宽锗硅探测器应用领域。
附图说明
图1为本发明实施例的剖面结构示意图；
图2为本发明实施例的俯视结构示意图；
图3为本发明实施例实现电压控制的宽光谱探测原理图；
图4为本发明实施例实现电压控制的宽光谱探测效果图
图中：1-半导体衬底，2- P型重掺杂硅层，3-金属接触电极一，4-I型非掺杂本征硅层，5-N型重掺杂硅层，6-非掺杂本征锗层，7-P型重掺杂锗层，8-金属接触电极二。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明了，下面通过附图及实施例，对本发明进行进一步详细说明。但是应该理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限制本发明的范围。此外，在以下说明中，省略了对公知结构和技术的描述，以避免不必要地混淆本发明的概念。
在本实施例中，提供了一种电压控制的宽光谱锗硅探测器，所述锗硅探测器工作于400-1600 nm宽光谱波段，涵盖可见光及红外双波段探测器。如图1、图2所示，所述锗硅探测器包括自下而上依次设有的半导体衬底1、P型重掺杂硅层2、I型非掺杂本征硅层4、N型重掺杂硅层5、非掺杂本征锗层6、P型重掺杂锗层7，所述P型重掺杂硅层2上设有与P型重掺杂硅层2相连的金属接触电极一3，所述P型重掺杂锗层7上设有与P型重掺杂锗层7相连的金属接触电极二8，所述锗硅探测器在器件有源区形成PINIP型整体掺杂结构。
进一步地，所述P型重掺杂硅层2相连的金属接触电极一3与所述P型重掺杂锗层7相连的金属接触电极二8构成一组电极，通过控制电极外部施加电压选择使用硅-PIN光电探测器或锗-PIN光电探测器。
进一步地，所述P型掺杂掺杂离子为B3+，所述N型掺杂掺杂离子为P5+或As5+。
进一步地，所述锗硅探测在半导体衬底1上制作，所述半导体衬底1为硅、锗或SOI
进一步地，所述宽光谱锗硅探测器在器件有源区形成PINIP型整体掺杂结构，P型重掺杂区与I型本征区之间可以存在P型轻掺杂区。
进一步地，所述宽光谱锗硅探测在半导体衬底1上制作，所述宽光谱锗硅探测器在器件有源区形成PINIP型整体掺杂结构，N型重掺杂区与I型本征区之间可以存在N型轻掺杂区。
进一步地，所述金属电极一和金属电极二的材料为Al、Cu或Au。
本发明实施例还提供了一种基于上述锗硅探测器的光谱范围控制方法，通过控制施加给金属电极的电压，切换使用硅-PIN光电探测器和锗-PIN光电探测器，根据硅材料和锗材料吸收光谱能量的范围，实现所述锗硅探测器可探测的光谱范围的切换。
如图3电路原理图所示，光源垂直入射进入锗硅探测器中，由于硅材料带隙宽度为1.1 eV，锗材料带隙宽度为0.66 eV，可以分别吸收400-1200nm及1000-1600nm的光谱能量。通过控制电极外部施加电压来选择使用硅-PIN光电探测器或锗-PIN光电探测器来实现电压控制的宽光谱探测，拓宽锗硅探测器应用领域。如图4电压控制的宽光谱探测器响应度效果图所示，当施加电压选择硅-PIN光电结构时，宽光谱锗硅探测器可以探测400-1200 nm光谱范围内的光源；当施加电压选择锗-PIN光电结构时，宽光谱锗硅探测器可以探测1000-1600 nm光谱范围内的光源。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换或改进等，均应包含在本发明的保护范围之内。
Claims (8)
1.一种电压控制的宽光谱锗硅探测器，其特征在于：所述锗硅探测器包括自下而上依次设有的半导体衬底、P型重掺杂硅层、I型非掺杂本征硅层、N型重掺杂硅层、非掺杂本征锗层、P型重掺杂锗层，所述P型重掺杂硅层上设有与P型重掺杂硅层相连的金属接触电极一，所述P型重掺杂锗层上设有与P型重掺杂锗层相连的金属接触电极二，所述锗硅探测器在器件有源区形成PINIP型整体掺杂结构。
2.如权利要求1所述的一种电压控制的宽光谱锗硅探测器，其特征在于：所述P型重掺杂硅层相连的金属接触电极一与所述P型重掺杂锗层相连的金属接触电极二构成一组电极，通过控制电极外部施加电压选择使用硅-PIN光电探测器或锗-PIN光电探测器。
3.如权利要求1所述的一种电压控制的宽光谱锗硅探测器，其特征在于：所述P型掺杂掺杂离子为B3+，所述N型掺杂掺杂离子为P5+或As5+。
4.如权利要求1所述的一种电压控制的宽光谱锗硅探测器，其特征在于：所述锗硅探测在半导体衬底上制作，所述半导体衬底为硅、锗或SOI。
5.如权利要求1所述的一种电压控制的宽光谱锗硅探测器，其特征在于：所述PINIP型整体掺杂结构中，P型重掺杂区与I型本征区之间存在P型轻掺杂区。
6.如权利要求1所述的一种电压控制的宽光谱锗硅探测器，其特征在于：所述PINIP型整体掺杂结构中，N型重掺杂区与I型本征区之间存在N型轻掺杂区。
7.如权利要求1所述的一种电压控制的宽光谱锗硅探测器，其特征在于：所述金属电极一和金属电极二的材料为Al、Cu或Au。
8.一种基于权利要求1-7任一项所述的锗硅探测器的光谱范围控制方法，其特征在于：通过控制施加给金属电极的电压，切换使用硅-PIN光电探测器和锗-PIN光电探测器，根据硅材料和锗材料吸收光谱能量的范围，实现所述锗硅探测器可探测的光谱范围的切换。
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| CN106531822A (zh) * | 2016-11-29 | 2017-03-22 | 电子科技大学 | 一种光电探测器 |
| CN210136887U (zh) * | 2019-07-08 | 2020-03-10 | 上海新微技术研发中心有限公司 | 一种波导型光电探测器 |
| CN112201723A (zh) * | 2019-07-08 | 2021-01-08 | 上海新微技术研发中心有限公司 | 一种波导型光电探测器及其制备方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106531822A (zh) * | 2016-11-29 | 2017-03-22 | 电子科技大学 | 一种光电探测器 |
| CN210136887U (zh) * | 2019-07-08 | 2020-03-10 | 上海新微技术研发中心有限公司 | 一种波导型光电探测器 |
| CN112201723A (zh) * | 2019-07-08 | 2021-01-08 | 上海新微技术研发中心有限公司 | 一种波导型光电探测器及其制备方法 |
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