CN116711078A - 固态成像装置和电子设备 - Google Patents

固态成像装置和电子设备 Download PDF

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Publication number
CN116711078A
CN116711078A CN202280010842.8A CN202280010842A CN116711078A CN 116711078 A CN116711078 A CN 116711078A CN 202280010842 A CN202280010842 A CN 202280010842A CN 116711078 A CN116711078 A CN 116711078A
Authority
CN
China
Prior art keywords
wiring
substrate
state imaging
solid
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN202280010842.8A
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English (en)
Chinese (zh)
Inventor
福井大伸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN116711078A publication Critical patent/CN116711078A/zh
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202280010842.8A 2021-01-26 2022-01-12 固态成像装置和电子设备 Withdrawn CN116711078A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-010285 2021-01-26
JP2021010285 2021-01-26
PCT/JP2022/000668 WO2022163346A1 (ja) 2021-01-26 2022-01-12 固体撮像装置及び電子機器

Publications (1)

Publication Number Publication Date
CN116711078A true CN116711078A (zh) 2023-09-05

Family

ID=82653328

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280010842.8A Withdrawn CN116711078A (zh) 2021-01-26 2022-01-12 固态成像装置和电子设备

Country Status (4)

Country Link
US (1) US20240395835A1 (https=)
JP (1) JPWO2022163346A1 (https=)
CN (1) CN116711078A (https=)
WO (1) WO2022163346A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120836203A (zh) * 2023-04-07 2025-10-24 索尼半导体解决方案公司 光检测装置
WO2026014286A1 (ja) * 2024-07-08 2026-01-15 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5489705B2 (ja) * 2009-12-26 2014-05-14 キヤノン株式会社 固体撮像装置および撮像システム
US11961865B2 (en) * 2016-02-09 2024-04-16 Sony Group Corporation Semiconductor device, method of manufacturing a semiconductor device, solid-state imaging device, and electronic apparatus
JP6949557B2 (ja) * 2017-05-25 2021-10-13 キヤノン株式会社 撮像装置、撮像システム、移動体
TWI846699B (zh) * 2018-06-15 2024-07-01 日商索尼股份有限公司 固體攝像元件、固體攝像裝置、電子機器及固體攝像元件之製造方法
JP2021192395A (ja) * 2018-08-29 2021-12-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
US11521998B2 (en) * 2018-09-18 2022-12-06 Sony Semiconductor Solutions Corporation Solid-state imaging device and imaging device
JP2020096225A (ja) * 2018-12-10 2020-06-18 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び電子機器
EP3896723B1 (en) * 2018-12-13 2026-04-08 Sony Semiconductor Solutions Corporation Solid-state imaging element and video recording device
JP7475331B2 (ja) * 2019-03-29 2024-04-26 ソニーセミコンダクタソリューションズ株式会社 撮像装置
US11658202B2 (en) * 2020-05-15 2023-05-23 Omnivision Technologies, Inc. Dual row select pixel for fast pixel binning

Also Published As

Publication number Publication date
JPWO2022163346A1 (https=) 2022-08-04
WO2022163346A1 (ja) 2022-08-04
US20240395835A1 (en) 2024-11-28

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Application publication date: 20230905