JPWO2022163346A1 - - Google Patents
Info
- Publication number
- JPWO2022163346A1 JPWO2022163346A1 JP2022578212A JP2022578212A JPWO2022163346A1 JP WO2022163346 A1 JPWO2022163346 A1 JP WO2022163346A1 JP 2022578212 A JP2022578212 A JP 2022578212A JP 2022578212 A JP2022578212 A JP 2022578212A JP WO2022163346 A1 JPWO2022163346 A1 JP WO2022163346A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021010285 | 2021-01-26 | ||
| PCT/JP2022/000668 WO2022163346A1 (ja) | 2021-01-26 | 2022-01-12 | 固体撮像装置及び電子機器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2022163346A1 true JPWO2022163346A1 (https=) | 2022-08-04 |
Family
ID=82653328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022578212A Abandoned JPWO2022163346A1 (https=) | 2021-01-26 | 2022-01-12 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240395835A1 (https=) |
| JP (1) | JPWO2022163346A1 (https=) |
| CN (1) | CN116711078A (https=) |
| WO (1) | WO2022163346A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN120836203A (zh) * | 2023-04-07 | 2025-10-24 | 索尼半导体解决方案公司 | 光检测装置 |
| WO2026014286A1 (ja) * | 2024-07-08 | 2026-01-15 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び電子機器 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5489705B2 (ja) * | 2009-12-26 | 2014-05-14 | キヤノン株式会社 | 固体撮像装置および撮像システム |
| US11961865B2 (en) * | 2016-02-09 | 2024-04-16 | Sony Group Corporation | Semiconductor device, method of manufacturing a semiconductor device, solid-state imaging device, and electronic apparatus |
| JP6949557B2 (ja) * | 2017-05-25 | 2021-10-13 | キヤノン株式会社 | 撮像装置、撮像システム、移動体 |
| TWI846699B (zh) * | 2018-06-15 | 2024-07-01 | 日商索尼股份有限公司 | 固體攝像元件、固體攝像裝置、電子機器及固體攝像元件之製造方法 |
| JP2021192395A (ja) * | 2018-08-29 | 2021-12-16 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子 |
| US11521998B2 (en) * | 2018-09-18 | 2022-12-06 | Sony Semiconductor Solutions Corporation | Solid-state imaging device and imaging device |
| JP2020096225A (ja) * | 2018-12-10 | 2020-06-18 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及び電子機器 |
| EP3896723B1 (en) * | 2018-12-13 | 2026-04-08 | Sony Semiconductor Solutions Corporation | Solid-state imaging element and video recording device |
| JP7475331B2 (ja) * | 2019-03-29 | 2024-04-26 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
| US11658202B2 (en) * | 2020-05-15 | 2023-05-23 | Omnivision Technologies, Inc. | Dual row select pixel for fast pixel binning |
-
2022
- 2022-01-12 JP JP2022578212A patent/JPWO2022163346A1/ja not_active Abandoned
- 2022-01-12 CN CN202280010842.8A patent/CN116711078A/zh not_active Withdrawn
- 2022-01-12 WO PCT/JP2022/000668 patent/WO2022163346A1/ja not_active Ceased
- 2022-01-12 US US18/261,615 patent/US20240395835A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022163346A1 (ja) | 2022-08-04 |
| US20240395835A1 (en) | 2024-11-28 |
| CN116711078A (zh) | 2023-09-05 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20241206 |
|
| A762 | Written abandonment of application |
Free format text: JAPANESE INTERMEDIATE CODE: A762 Effective date: 20250418 |