CN116705689A - 用于选择性预清洁的快速响应基座组件 - Google Patents

用于选择性预清洁的快速响应基座组件 Download PDF

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CN116705689A
CN116705689A CN202310728550.4A CN202310728550A CN116705689A CN 116705689 A CN116705689 A CN 116705689A CN 202310728550 A CN202310728550 A CN 202310728550A CN 116705689 A CN116705689 A CN 116705689A
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substrate support
plate
support pedestal
substrate
gas distribution
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劳拉•哈夫雷查克
柴塔尼亚·A·普拉萨德
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Applied Materials Inc
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Abstract

本公开内容的实施方式大体涉及一种改良的基板支撑基座组件。在一个实施方式中，基板支撑基座组件包括轴。基板支撑基座组件进一步包括基板支撑基座，所述基板支撑基座机械耦接至轴。基板支撑基座包括基板支撑板，所述基板支撑板以陶瓷材料涂布于顶表面。

Description

用于选择性预清洁的快速响应基座组件
本申请是申请日为2019年1月23日申请的申请号为201980011975.5，并且发明名称为“用于选择性预清洁的快速响应基座组件”的发明专利申请的分案申请。
技术领域
本公开内容的实施方式大体涉及在预清洁腔室中使用的基座(pedestal)。
背景技术
集成电路形成于硅和其他半导体基板中以及形成于硅和其他半导体基板上。在单晶硅的情况中，基板藉由从熔融硅浴中生长出锭块(ingot)，且接着将固化的锭块锯切成多个基板而制成。外延硅层可接着形成于单晶硅基板上，以形成可为掺杂或未掺杂的不含缺陷的硅层。诸如晶体管之类的半导体装置可由外延硅层制造。所形成的外延硅层的电气特性通常比单晶硅基板的特性更佳。
当暴露于典型的基板制造设备周围条件时，单晶硅和外延硅层的表面易受污染影响。举例而言，归因于在基板处理设备中基板的处置和/或暴露于周围环境，在沉积外延层之前可能在单晶硅表面上形成原生氧化层。此外，在周围环境中诸如碳和氧之类的外来污染物可沉积在单晶表面上。在单晶硅表面上存在的原生氧化层或污染物不利地影响后续形成于单晶表面上的外延层的品质。因此，意图对基板预清洁，以便在基板上生长外延层之前移除表面氧化物和其他污染物。
传统的预清洁处理通常在具有基板支撑基座的独立真空处理腔室中执行。在其上支撑基板的基座的顶板由陶瓷制成，以避免由基板与金属表面接触所造成的金属污染。因为陶瓷板为热的不良导体，所以与基板接触的基座的顶部表面的温度控制是困难的，且稳定基板温度所需的时间可极其长，这可能不期望地增加基板处理时间，并增加处理基板的费用。此外，某些处理将在两个或更多个温度之间循环基板温度，且此稳定时间的影响可能会重复多次。
因此，本领域中需要用于在预清洁腔室中使用的改良的基板支撑基座。
发明内容
本文描述一种基板支撑基座组件。在一个实施方式中，基板支撑基座组件包括轴(shaft)和耦接至轴的基板支撑基座。基板支撑基座包括铝基板支撑板，铝基板支撑板具有以陶瓷材料涂布的顶表面。基板支撑基座组件亦可包括背侧气体通道，这些背侧气体通道可用于进一步改善基板支撑基座的顶表面与基板之间的耦接。
本文描述一种适于从基板的表面移除污染物的处理腔室。在一个实施方式中，处理腔室包括腔室主体、设置于腔室主体上的盖组件、和至少部分地设置于腔室主体内的基板支撑基座组件。基板支撑基座组件包括轴和耦接至轴的基板支撑基座。基板支撑基座包括铝基板支撑板，铝基板支撑板具有以陶瓷材料涂布的顶表面。基板支撑基座组件亦可包括背侧气体通道，这些背侧气体通道可用于进一步改善基板支撑基座的顶表面与基板之间的耦接。
本文描述一种基板支撑基座组件。在一个实施方式中，基板支撑基座组件包括铝基板支撑板，铝基板支撑板具有以陶瓷材料涂布的顶表面、和底表面。基板支撑板包括具有第一直径的第一子板、和焊接至第一子板的底表面的第二子板。第二子板具有大于第一直径的第二直径，以便外绕第二子板的周边形成唇部。基板支撑板包括多个真空通路，此多个真空通路延伸通过基板支撑板，且从基板支撑板的顶表面和底表面上离开。
基板支撑板进一步包括气体分配板，所述气体分配板焊接至基板支撑板的底表面，气体分配板包括与真空吸附通路(vacuum chucking passage)对齐的多个通路，这些真空吸附通路从基板支撑板的底表面至顶表面穿过基板支撑板。气体分配板进一步包括与基板支撑板的真空通路对齐的多个气体通路。
基板支撑板进一步包括底板，所述底板焊接至气体分配板的底表面。底板包括具有第一直径的第一子板、和焊接至第一子板的底表面的第二子板。第二子板具有大于第一直径的第二直径，以便围绕第二子板的周边形成唇部。底板具有形成于其中的多个冷却通道，用于接收通过轴而输送的冷却剂流体。
基板支撑板进一步包括盖板(cap plate)，所述盖板耦接至底板，且将形成于底板中的冷却通道密封。
附图说明
如以上简要概述且以下更详细讨论的本公开内容的实施方式，可藉由参照附图中描绘的本公开内容的图示实施方式来理解。然而，应理解附图仅图示本公开内容的典型实施方式，且因此不应视为对其范围的限制，因为本公开内容可允许其他同等效果的实施方式。
图1是根据本公开内容的一个实施方式的预清洁腔室的截面图。
图2是根据一个实施方式的基板支撑基座的截面图。
图3是图2的基板支撑基座的透视图。
图4是利用传统基板支撑基座的基板在腔室中经历温度循环的时间对温度的图形，以及利用图2和图3的基板支撑基座的基板在腔室中经历温度循环的温度图形。
为了便于理解，已尽可能地使用相同的元件符号代表各图中共有的相同元件。各图并非按照比例绘制，且为了清楚而可简化。预期一个实施方式的元件和特征可有利地并入其他实施方式中而无需进一步说明。
具体实施方式
在半导体基板处理中，使用预清洁处理从半导体基板的表面移除氧化物。清洁处理可包括在预清洁腔室内执行的等离子体处理。预清洁腔室包括腔室主体、盖组件和支撑组件。支撑组件包括其上放置基板的基板支撑基座。基板支撑基座和基板可通过致动器在腔室主体内垂直地移动，致动器抬升基板支撑基座的轴。可抬升基板支撑基座至靠近盖组件的位置，从而升高经处理的基板的温度。接着将基板从抬升的位置下降离开，以促进对基板的冷却。此加热和冷却可重多个循环。
为了促进基板的快速加热和冷却，基板支撑基座本质上全部由金属板制成，以强化有效的热传递。基板支撑基座包括基板支撑板，在顶表面以诸如陶瓷之类的非金属材料涂布，而避免基板的金属污染。与全部以陶瓷制成的相关领域的基板支撑板相比较，在基板支撑板上的薄的涂层显著降低加热和冷却基板所需的时间。基板支撑基座进一步包括焊接在一起的具有各种功能的数个下层金属板，以进一步强化且提升通过基座的良好热传导。
图1为适于从基板的表面移除诸如氧化物之类的污染物的预清洁处理腔室100的截面图。可适于执行还原处理的示例性处理腔室包括SiconiTM处理腔室，可购自美国加州圣克拉拉市的应用材料公司(Applied Materials，Inc.)。来自其他制造商的腔室亦可适于从本文所披露的发明获益。
处理腔室100可特别适用于执行热或基于等离子体的清洁处理、和/或等离子体辅助干式蚀刻处理。处理腔室100包括腔室主体112、盖组件114和基座组件116。盖组件114设置于腔室主体112的上端，且基座组件116至少部分地设置于腔室主体112内。真空系统可用于从处理腔室100移除气体。真空系统包括真空泵118，真空泵118耦接至设置于腔室主体112中的真空端口121。处理腔室100还包括控制器102，控制器102用于控制处理腔室100内的处理。
盖组件114包括多个堆叠的部件，配置成提供前驱物气体和/或等离子体至处理腔室100内的处理区域122。第一板120耦接至第二板140。第三板144耦接至第二板140。盖组件114可连接至远程等离子体源124，以生成等离子体副产物，所述等离子体副产物接着穿过盖组件114的其余部分。远程等离子体源124耦接至气源152(或在缺乏移除等离子体源124时，气源152直接耦接至盖组件114)。气源152可包括氦气、氩气或激发成等离子体而提供至盖组件114的其他惰性气体。在替代实施方式中，气源152可包括待活化用于与处理腔室100中的基板反应的处理气体。
基座组件116包括在处理期间将基板110支撑于其上的基板支撑基座132。基板支撑基座132通过轴136耦接至致动器134，轴136延伸通过形成于腔室主体112底部的中央定位的开口。致动器134可通过波纹管(未示出)柔性密封至腔室主体112，而避免在轴136周围的真空泄漏。致动器134允许基板支撑基座132在腔室主体112内于一个或更多个处理位置之间、和释放或传送位置之间垂直移动。传送位置在形成于腔室主体112的侧壁中的狭缝阀的开口略微下方，以允许基板110机器式地传送进入及离开处理腔室100。
在某些处理操作中，基板110可藉由举降销与顶表面隔开，以执行额外的热处理操作，诸如执行退火步骤。可降低基板110以将基板放置为与基板支撑基座132直接接触，从而促进基板110的冷却。
图2为基板支撑基座132的详细截面图。基板支撑基座132包括基板支撑板200、气体分配板206、底板208和盖板214。尽管以下描述基板支撑板200、气体分配板206、底板208和盖板214为分开的单独板，预期板200、206、208、214的任一者或更多者可制成为单一一体部件，例如通过消失模铸造法(1ost foam casting)或3D打印。
基板支撑板200包括用于在处理期间将基板110支撑于其上的顶表面202、侧表面203和底表面205。基板支撑板200具有介于0.1英寸至0.75英寸之间的厚度。基板支撑板200通常由具有良好热传导性的材料制成，诸如金属，例如铝。
基板支撑板200可包括具有第一直径的第一子板220a和具有大于第一直径的第二直径的第二子板220b，以便围绕第二子板220b的周边形成唇部221。子板220a、220b可焊接在一起以确保良好的热传递。或者，基板支撑板200可具有一体的构造。第一直径实质上等于或略小于基板110的直径。第二直径大于第一直径，且可选地足够支撑环绕基板110的处理环(未示出)。
基板支撑板200的顶表面202界定基座132的基板支撑表面。顶表面202被陶瓷涂层204覆盖，以避免基板110的金属污染。适合的陶瓷涂层包括氧化铝、氮化铝、二氧化硅、硅、氧化钇、YAG或其他非金属涂布材料。涂层204具有在50微米至1000微米的范围内的厚度。基板110被配置成在处理期间真空吸附设置于顶表面202上的涂层204。陶瓷涂层204并未存在于侧表面203和唇部221上。
基板支撑板200包括多个真空通路250。真空通路250延伸通过基板支撑板200，在顶表面202和底表面205上离开。通过真空通路250施加真空，以将基板110固定至顶表面202。预期真空通路250可以不同的路径通过基板支撑板200，且提供相同的功能。真空通道亦可连接至诸如Ar、He或N2之类的气源，以在基板110背后提供背侧净化，将处理气体保持远离基板110的背部，或提供背侧气体，以增加基座132与基板110之间的热传导。
气体分配板206设置于基板支撑板200下方。气体分配板206具有顶表面207、侧表面209和底表面211。气体分配板206的顶表面207机械耦接至基板支撑板200的底表面205。气体分配板206由热传导材料制成，例如金属，诸如铝。
为了进一步促进接合的板200、206之间的热传递，将气体分配板206的顶表面207焊接至基板支撑板200的底表面205。陶瓷涂层204并未存在于侧表面209上，以促进基座132进一步的热响应。气体分配板206具有在0.1英寸至0.75英寸的范围内的厚度。气体分配板206进一步包括与基板支撑板200的真空通路250对齐的多个气体通路213，使得施加至通路213的真空有效地提供至顶表面202。真空通路250耦接至通过轴136而布线的真空线(未示出)。
底板208设置于气体分配板206下方，且相对于支撑板200夹住气体分配板206。底板208具有顶表面215、侧表面217和底表面219。底板208的顶表面215机械耦接至气体分配板206的底表面211。底板208具有在0.1英寸至0.75英寸的范围内的厚度。底板208由热传导材料制成，例如金属，诸如铝。为了进一步促进接合的板206、208之间的热传递，将底板208的顶表面215焊接至气体分配板206的底表面211。
底板208可包括具有第一直径的第一子板226a和具有大于第一直径的第二直径的第二子板226b，以便围绕第二子板226b的周边形成唇部227。陶瓷涂层204并未存在于侧表面217或唇部227上，以促进基座与周围环境的良好热传递。
气体分配板206的直径可等于第二子板220a的直径，以使气体分配板206的外周与基板支撑板200对齐。气体分配板206的直径可等于第一子板226a的直径，以使气体分配板206的外周与底板208对齐。底板208具有形成于其中的多个冷却通道210，用于接收冷却剂流体以通过冷却通道210来冷却基板110。冷却剂流体可流动通过通道210而与底板208的材料直接接触，或通过设置于通道210中的导管。
基板支撑基座132进一步包括盖板214，盖板214机械耦接至底板208且位于底板208下面，用于将通道210密封在底板208内。盖板214具有顶表面222和侧表面223。盖板214具有在0.1英寸至0.75英寸的范围内的厚度。盖板214可由热传导材料制成，例如金属，诸如铝。盖板214的直径可等于第二子板226a的直径，以使底板208的外周与盖板214对齐。为了进一步促进接合的板208、214之间的热传递，将盖板214的顶表面222焊接至底板208的底表面219。陶瓷涂层204并未存在于侧表面223上，以促进基座与周围环境的良好热传递。
流体供应导管216和流体返回导管218通过轴136而设置。流体供应导管216耦接至形成于热底板208中的通道210的入口端口(未示出)，同时流体返回导管218耦接至形成于热底板208中的通道210的出口端口(未示出)。经由导管216、218提供的流体循环通过底板208的冷却通道212，以提供对基座132的有效温度控制。
基板支撑基座132亦可含有类似于气体分配板206的额外气体分配板(未示出)。这些额外气体分配板可连接至诸如Ar、He或N2之类的气源，以向基座132上的其他位置提供净化流。举例而言，可并入额外气体分配板以于基板110的边缘处提供净化流。气体分配板206或额外气体分配板可被划分成多个区域，以对基板支撑基座132的不同区域提供不同的净化流或真空设定点。
图3为图2的基板支撑基座132的透视图。基板支撑基座132的顶表面202通常包括多个接触点310，在处理期间基板放置于这些接触点310上。举例而言，接触点310可与基板支撑板200一体地形成，且以陶瓷涂层204共形地涂布。接触点310亦可由涂布材料在平坦金属表面上形成。在一个实施方式中，接触点310围绕基座132的顶表面202的中心点312(即，基座132的中心线或中心轴)布置成同心圆。另外地或替代地，接触点310可布置成方位对称的图案，以确保基板的均匀处理。接触点310可为台面(mesa)、突起(protrusion)或凸块(bump)的形式。接触点310提供小的接触表面积，以避免基板直接接触全部的顶表面202。在一个实施方式中，接触点310为设置于基座132的顶表面202上的蓝宝石球。
基座132的顶表面202可进一步具有与径向分配通道332互连的多个同心气体分配通道330，用于从气体分配板206通过气体分配板206中的通路250接收净化气体(如图2中所示)。
图4为利用传统冷却基座的设置于处理腔室中的基板110的时间对温度的图形402，相对于利用图2和图3的基板支撑基座132的用于处理腔室(诸如腔室100)的基板110的温度的图形406。如图4中所示，图形402在约58摄氏度的尖峰和约42摄氏度的凹谷(lowertrough)具有相对一致的温度。再者，图形406所观察到的温度相对于图形402具有明显的向上漂移。图形406具有于约60摄氏度开始的尖峰(显著比图形402的尖峰更热)，且在数个循环上向上漂移至约63摄氏度，说明了基板支撑基座132相对于传统基座具有非常稳健且可重复的温度控制。因此，基板支撑基座132比传统基座更可信赖地加热和冷却。
尽管以上针对本公开内容的实施方式，但是可在不背离本公开内容的基本范围的情况下，设计出本公开内容的其他和进一步的实施方式。

Claims (10)

1.一种基板支撑基座组件，包括：
轴；
基板支撑基座，所述基板支撑基座耦接至所述轴，所述基板支撑基座包括铝基板支撑板，所述铝基板支撑板包括：
穿过所述铝基板支撑板设置的垂直通路；和
以陶瓷材料涂布的顶表面；
多个同心气体分配通道；和
多个径向分配通道，其中所述多个同心气体分配通道耦接至所述多个径向分配通道，以使从所述垂直通路中流出的气体从中流过，并且其中所述陶瓷材料设置在所述多个同心气体分配通道和所述多个径向分配通道上方。
2.如权利要求1所述的基板支撑基座组件，其中所述陶瓷材料为氧化铝。
3.如权利要求1所述的基板支撑基座组件，其中所述基板支撑板的侧面并未以所述陶瓷材料涂布。
4.如权利要求1所述的基板支撑基座组件，其中所述基板支撑基座进一步包括：
气体分配板，所述气体分配板焊接至所述基板支撑板的底表面，所述气体分配板包括与真空吸附通路对齐的多个通路，所述真空吸附通路从所述底表面通过所述基板支撑板至所述顶表面。
5.如权利要求4所述的基板支撑基座组件，其中所述基板支撑基座进一步包括：
底板，所述底板焊接至所述气体分配板的底部，所述底板具有形成于其中的多个冷却通道，用于接收通过所述轴而输送的冷却剂流体。
6.如权利要求5所述的基板支撑基座组件，其中所述基板支撑基座进一步包括：
盖板，所述盖板耦接至所述底板，且将形成于所述底板中的所述冷却通道密封。
7.如权利要求5所述的基板支撑基座组件，其中所述气体分配板和所述底板由铝制成。
8.如权利要求4所述的基板支撑基座组件，其中在所述基板支撑基座中存在额外气体分配板，以向所述基板支撑基座的边缘提供净化流。
9.一种适于从基板的表面移除污染物的处理腔室，包括：
腔室主体；
盖组件，所述盖组件设置于所述腔室主体上；和
基板支撑基座组件，所述基板支撑基座组件至少部分地设置于所述腔室主体内，其中所述基座组件包括在处理期间将基板支撑于其上的基板支撑基座，所述基板支撑基座包括：
轴；和
铝基板支撑板，所述铝基板支撑板机械耦接至所述轴并且包括：
穿过所述铝基板支撑板设置的垂直通路；和
以陶瓷材料涂布的顶表面；
多个同心气体分配通道；和
多个径向分配通道，其中所述多个同心气体分配通道耦接至所述多个径向分配通道，以使从所述垂直通路中流出的气体从中流过，并且其中所述陶瓷材料设置在所述多个同心气体分配通道和所述多个径向分配通道上方。
10.如权利要求9所述的处理腔室，其中所述陶瓷材料为氧化铝。
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TW201946184A (zh) 2019-12-01
KR20200118902A (ko) 2020-10-16
KR20230101950A (ko) 2023-07-06
WO2019173002A1 (en) 2019-09-12
CN111684580B (zh) 2023-07-07
US20190272982A1 (en) 2019-09-05
US11515130B2 (en) 2022-11-29
KR102550680B1 (ko) 2023-07-04
US20230086640A1 (en) 2023-03-23
US11990321B2 (en) 2024-05-21

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