CN116661236A - Pattern correction method and system and preparation method of photomask - Google Patents
Pattern correction method and system and preparation method of photomask Download PDFInfo
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- 238000012937 correction Methods 0.000 title claims abstract description 297
- 238000000034 method Methods 0.000 title claims abstract description 68
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
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- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The application relates to a pattern correction method and system and a preparation method of a photomask. The graph correction method comprises the following steps: obtaining a design graph, wherein the design graph comprises a plurality of graphs to be corrected which are distributed at intervals; performing optical proximity correction on the design graph to obtain a plurality of initial correction graphs which are distributed at intervals; obtaining a correction area violating the minimum rule of the mask plate in the initial correction graph, and removing the correction area; setting a strip pattern on the side edge of the initial correction pattern based on the correction area; and merging the strip pattern with the initial correction pattern to obtain the target pattern. The pattern correction method can improve the convergence degree and accuracy of the pattern, ensure the accuracy of photoetching and further ensure the performance of products.
Description
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to a pattern correction method and system and a preparation method of a photomask.
Background
The photolithography process is an important step in the semiconductor device fabrication process; the photolithography process uses exposure and development to transfer the pattern on the photomask to the photoresist layer. However, in the photolithography process, when the pattern on the mask is transferred to the photoresist layer through exposure and development, due to the imperfections and diffraction effects of the optical system, the pattern on the photoresist layer and the pattern on the photomask deviate, and when a product is formed based on the pattern on the photoresist, the performance of the product is affected.
OPC (Optical Proximity Correction ) is a commonly used correction method at present, in order to prevent a pattern from shorting or breaking during OPC, the line width and the pitch of the pattern are usually detected according to a set minimum dimension rule value (Mask Rule Constraints, MRC) (including a line width value and a pitch value), however, the introduction of MRC has a great influence on the convergence degree of OPC, so that the accuracy of correction is affected, and an error is caused to be great, so that the performance of a product is affected.
Disclosure of Invention
Based on this, it is necessary to provide a pattern correction method and system, and a photomask manufacturing method for solving the above problems.
In order to achieve the above object, in one aspect, the present application provides a graphic correction method, including:
obtaining a design graph, wherein the design graph comprises a plurality of graphs to be corrected which are distributed at intervals;
performing optical proximity correction on the design graph to obtain a plurality of initial correction graphs which are distributed at intervals;
acquiring a correction area which violates a minimum rule of a mask plate in the initial correction graph, and removing the correction area;
setting a strip pattern on the side edge of the initial correction pattern based on the correction area;
and merging the strip pattern with the initial correction pattern to obtain a target pattern.
In one embodiment, the obtaining the corrected region of the initial corrected graph, which violates the minimum rule of the mask plate, includes:
and detecting the minimum rule of the mask plate for the initial correction pattern, and determining the area which does not accord with the minimum rule of the mask plate as the correction area.
In one embodiment, the correction area is located between adjacent ones of the initial correction patterns; the step of setting the bar graph on the side of the initial correction graph based on the correction area comprises the following steps:
setting a preset length value based on the convergence degree;
obtaining the length of the strip pattern and the width of the strip pattern based on the preset length value, the length of the correction area and the width of the correction area;
and setting the position of the strip pattern based on the preset length value and the length of the correction area.
In one embodiment, the obtaining the length of the stripe pattern and the width of the stripe pattern based on the preset length value, the length of the correction area, and the width of the correction area includes:
if the length of the correction area is smaller than the preset length value, setting the length of the strip-shaped pattern to be the same as the length of the correction area, wherein the width of the strip-shaped pattern is X times the width of the correction area;
if the length of the correction area is greater than or equal to the preset length value, setting the length of the strip-shaped pattern to be Y times the length of the correction area, and setting the width of the strip-shaped pattern to be X times the width of the correction area, wherein X=0.1-5, and Y=0.2-0.8.
In one embodiment, an end of the initial correction pattern, where the correction area is provided, is denoted as a correction end; the setting the position of the bar graph based on the preset length value and the length of the correction area includes:
if the length of the correction area is smaller than the preset length value, the strip-shaped pattern is arranged on one side adjacent to the correction end;
and if the length of the correction area is greater than or equal to the preset length value, the strip-shaped patterns are arranged on two sides adjacent to the correction end.
In one embodiment, when the length of the correction area is smaller than the preset length value, an end, close to the correction end, of the bar pattern has a preset distance from the correction end, and a distance between an end, far away from the correction end, of the bar pattern and the correction end is a sum of the length of the bar pattern and the preset distance.
In one embodiment, the preset distance is equal to the width of the correction area.
In a second aspect, the present application also provides a graphic correction system, including:
the device comprises an acquisition module, a correction module and a correction module, wherein the acquisition module is used for acquiring a design graph, and the design graph comprises a plurality of graphs to be corrected which are distributed at intervals;
the optical proximity correction module is connected with the acquisition module and used for carrying out optical proximity correction on the design pattern so as to obtain a plurality of initial correction patterns which are distributed at intervals;
the mask rule checking module is connected with the optical proximity correction module and is used for acquiring a correction area which violates the minimum rule of the mask plate in the initial correction pattern and removing the correction area;
the pattern correction module is connected with the mask rule checking module and is used for setting a strip pattern on the side edge of the initial correction pattern based on the correction area; and merging the strip pattern with the initial correction pattern to obtain a target pattern.
In one embodiment, the pattern correction system further includes a stripe pattern setting module connected to the mask rule inspection module and the pattern correction module for setting a preset length value based on a convergence degree; obtaining the length of the strip pattern and the width of the strip pattern based on the preset length value, the length of the correction area and the width of the correction area; and setting the position of the bar pattern based on the preset length value and the length of the correction area.
In a third aspect, the present application further provides a method for preparing a photomask, including:
obtaining the target pattern by using the pattern correction method as described in the first aspect;
and transferring the target pattern to a transparent substrate to obtain the photomask.
The pattern correction method and system and the preparation method of the photomask have the following beneficial effects:
the pattern correction method of the application obtains an initial correction pattern by carrying out optical proximity effect correction on a design pattern in a photolithography process, removes a region of the correction pattern which violates a minimum rule of a mask, and repairs a strip pattern arranged on the side edge of the correction pattern through the removed region to obtain a new target pattern. The method is used for correcting the design graph, and the unexpected effects of the application are as follows: the convergence and accuracy of the graph can be improved, the accuracy of photoetching is ensured, and the performance of the product is further ensured.
According to the pattern correction system, the optical proximity correction module corrects the design pattern in the photoetching process to obtain an initial correction pattern, the mask rule inspection module removes the area of the correction pattern which violates the minimum rule of the mask plate, and the pattern correction module repairs the strip pattern arranged on the side edge of the correction pattern based on the removed area to obtain a new target pattern. The system is used for correcting the design graph, and the unexpected effects of the application are as follows: not only can the convergence degree and the accuracy of the graph be improved and the photoetching accuracy be ensured, but also the performance of the product is further ensured.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments or the conventional techniques of the present application, the drawings required for the descriptions of the embodiments or the conventional techniques will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to the drawings without inventive effort for those skilled in the art.
FIG. 1 is a flow chart of a method for graphic correction provided in one embodiment;
FIG. 2 is a flowchart of a method for providing a bar pattern on a side of an initial corrected pattern based on a correction area in a pattern correction method according to an embodiment;
FIG. 3 is a schematic diagram of an initial corrected pattern after obtaining a corrected region that violates a reticle minimum rule in the pattern correction method provided in one embodiment;
FIG. 4 is a schematic diagram of a graph correction method according to an embodiment after a bar graph is set on a side of the initial corrected graph based on the correction region;
FIG. 5 is a schematic diagram of an initial corrected pattern after obtaining a corrected region that violates a reticle minimum rule in a pattern correction method provided in another embodiment;
FIG. 6 is a schematic diagram of a graph correction method according to another embodiment after a bar graph is disposed on a side of the initial corrected graph based on the correction region;
FIG. 7 is a block diagram of a graphics-modifying system according to yet another embodiment;
fig. 8 is a flowchart of a method for manufacturing a photomask according to still another embodiment.
Reference numerals illustrate:
10. initial correction of the graph; 11. a target pattern; 12. a correction area; 13. a bar pattern;
20. an acquisition module; 21. an optical proximity correction module; 22. a mask rule checking module; 23. a pattern correction module; 24. and a strip pattern setting module.
Detailed Description
In order that the application may be readily understood, a more complete description of the application will be rendered by reference to the appended drawings. Preferred embodiments of the present application are shown in the drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present application, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. Also, as used herein, the term "and/or" includes any and all combinations of the associated listed items.
The photolithography process is an important step in the semiconductor device fabrication process; the photolithography process uses exposure and development to transfer the pattern on the photomask to the photoresist layer. However, in the photolithography process, when the pattern on the mask is transferred to the photoresist layer through exposure and development, due to the imperfections and diffraction effects of the optical system, the pattern on the photoresist layer and the pattern on the photomask deviate, and when a product is formed based on the pattern on the photoresist, the performance of the product is affected.
OPC is a common correction method, and in order to prevent shorting or breaking of patterns during OPC, line widths and pitches of patterns are generally detected according to minimum dimension rule values (Mask Rule Constraints, MRC) (including line width values and pitch values) of masks that are set to meet requirements. However, the introduction of MRC has a large influence on the convergence degree of OPC, and in particular Mask minimum space (mask pattern minimum size) in MRC has a large influence on the convergence degree of OPC, thereby affecting the accuracy of correction, resulting in a large error, thereby affecting the performance of the product.
Another method for preventing the pattern from shorting or breaking during OPC is Fix method, i.e. MRC is not limited or a more relaxed MRC is set during OPC, and the offending mask is removed after OPC. However, this method can increase the final EPE (edge placement error) of the reticle, resulting in non-convergence, i.e., can have a large impact on the convergence of OPC, thereby affecting the accuracy of correction, resulting in a large error, thereby affecting the performance of the product.
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
Based on this, it is necessary to provide a pattern correction method and system, and a photomask manufacturing method for solving the above problems.
Referring to fig. 1, the present application provides a method for correcting a pattern, which includes the following steps:
s101: obtaining a design graph, wherein the design graph comprises a plurality of graphs to be corrected which are distributed at intervals;
s102: performing optical proximity correction on the design graph to obtain a plurality of initial correction graphs which are distributed at intervals;
s103: obtaining a correction area violating the minimum rule of the mask plate in the initial correction graph, and removing the correction area;
s104: setting a strip pattern on the side edge of the initial correction pattern based on the correction area;
s105: and merging the strip pattern with the initial correction pattern to obtain the target pattern.
According to the pattern correction method in the embodiment, the initial correction pattern is obtained by correcting the optical proximity effect of the design pattern in the photolithography process, the area of the correction pattern violating the minimum rule of the mask is removed, and the strip pattern is arranged on the side edge of the correction pattern through the removed area, so that a new target pattern is obtained. By using the method to correct the design graph, the convergence and accuracy of the graph can be improved, the accuracy of photoetching is ensured, and the performance of the product is further ensured.
In step S101, please refer to step S101 in fig. 1, a design pattern is obtained, wherein the design pattern includes a plurality of patterns to be corrected arranged at intervals.
As an example, the design pattern is a pattern designed in the reticle design process, and the shape of the designed pattern to be corrected may be set according to actual process requirements, for example, the pattern to be corrected may be rectangular, circular, oval, or the like. In this embodiment, the shape of the pattern to be corrected may be rectangular as an example; of course, in other embodiments, the specific shape of the pattern to be corrected is not limited thereto.
In step S102, referring to step S102 in fig. 1 and fig. 3 and 5, optical proximity correction is performed on the design pattern to obtain a plurality of initial correction patterns 10 arranged at intervals.
Specifically, optical proximity correction (Optical Proximity Correction, OPC) is a lithographic resolution enhancement technique, and OPC is mainly used in the production process of semiconductor devices. In the photolithography process, a pattern on a reticle is projected on a photoresist by an exposure system, and the pattern on the photoresist and the pattern on the reticle are not completely identical due to imperfections and diffraction effects of an optical system. These distortions, if not corrected, may have a significant impact on the performance of the product produced. OPC is to correct the pattern on the mask plate by using a calculation method, so that the pattern projected on the photoresist meets the design requirement as much as possible.
It should be noted that, in fig. 3 and fig. 5, only two initial correction patterns 10 with rectangular shapes are illustrated, and in an actual embodiment, the shapes and the number of the initial correction patterns 10 may be set according to actual needs, and are not limited to those in fig. 3 and fig. 5.
The design pattern is an initial pattern used for forming a mask pattern in the mask, and the initial correction pattern is a pattern obtained by correcting the initial pattern.
In step S103, please refer to step S103 in fig. 1 and fig. 3 to 6, a correction region 12 violating the minimum rule of the mask in the initial correction pattern 10 is obtained, and the correction region 12 is removed.
As an example, obtaining a correction region 12 in the initial correction pattern 10 that violates a reticle minimum rule may include: the initial corrected pattern 10 is subjected to mask minimum rule detection, and a region which does not conform to the mask minimum rule is defined as a corrected region 12.
The minimum mask rule refers to a design rule that specifies a minimum line width, a minimum line pitch, and the like of a design pattern. The specific method of mask minimum rule detection for the initial corrected pattern 10 is known to those skilled in the art and will not be described in detail herein.
As an example, the correction region 12 may be removed by correcting the initial correction pattern 10; the pattern after removing the correction area 12 can be referred to fig. 4 and 5.
As an example, the correction areas 12 are located at the ends of the initial correction patterns 10, and in particular, the correction areas 12 are located between adjacent initial correction patterns 10.
In step S104, referring to step S104 in fig. 1 and fig. 3 to 6, a bar pattern 13 is disposed on the side of the initial correction pattern 10 based on the correction area 12.
As an example, referring to fig. 2, in step S104, disposing the bar patterns 13 on the side of the initial correction pattern 10 based on the correction region 12 may include the following steps:
s201: setting a preset length value based on the convergence degree;
s202: obtaining the length of the bar graph 13 and the width of the bar graph 13 based on the preset length value, the length of the correction area 12 and the width of the correction area 12;
s203: the position of the bar pattern 13 is set based on the preset length value and the length of the correction area 12.
As an example, in step S201, a method of setting the preset length value based on the convergence degree is known to those skilled in the art, and will not be described here.
In one example, in step S202, based on the preset length value, the length of the correction area 12, and the width of the correction area 12, obtaining the length of the bar pattern 13 and the width of the bar pattern 13 may include: if the length of the correction area 12 is smaller than the preset length value, setting the length of the bar pattern 13 to be the same as the length of the correction area 12, wherein the width of the bar pattern 13 is X times of the width of the correction area 12, and x=0.1-5; specifically, X may be 0.1, 0.5, 1, 2, 3, 4, 5, or the like.
Specifically, referring to fig. 3 and 4, if the length of the correction area 12 is smaller than the preset length value, the length of the bar pattern 13 is the same as the length of the correction area 12, and is denoted as L; the width of the correction area 12 is denoted as H, and the width of the stripe pattern 13 is denoted as x×h. It should be noted that, the specific values of L and H may be set according to the length and width of the area of the initial correction pattern 10 that violates the minimum rule of the mask, and the L and H values of different initial correction patterns 10 may be different, which is not limited by the specific values.
In another example, in step S202, based on the preset length value, the length of the correction area 12, and the width of the correction area 12, obtaining the length of the bar pattern 13 and the width of the bar pattern 13 may include: if the length of the corrected region 12 is greater than or equal to the preset length value, setting the length of the bar pattern 13 to be Y times the length of the corrected region 12, and setting the width of the bar pattern 13 to be X times the width of the corrected region 12, wherein X=0.1-5, and Y=0.2-0.8; specifically, X may be 0.1, 0.5, 1, 2, 3, 4, or 5, etc., and Y may be 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, or 0.8, etc.
Specifically, referring to fig. 5 and 6, if the length of the correction area 12 is greater than or equal to the preset length value, the length of the correction area 12 is denoted as L, and the width of the correction area 12 is denoted as H, the length of the bar pattern 13 is denoted as y×l; the width of the bar pattern 13 is denoted as X H. It should be noted that, the specific values of L and H may be set according to the length and width of the area of the initial correction pattern 10 that violates the minimum rule of the mask, and the L and H values of different initial correction patterns 10 may be different, which is not limited by the specific values.
As an example, the end of the initial correction pattern 10 where the correction region 12 is provided is denoted as the correction end; in step S203, setting the position of the bar pattern 13 based on the preset length value and the length of the correction area 12 may include:
if the length of the correction area 12 is smaller than the preset length value, the bar pattern 13 is arranged on the side adjacent to the correction end, as shown in fig. 4; if the length of the correction area 12 is smaller than the preset length value, setting a strip pattern 13 on one side of the initial correction pattern 10 adjacent to the correction end;
if the length of the correction area 12 is greater than or equal to the preset length value, the bar patterns 13 are disposed on two sides adjacent to the correction end, as shown in fig. 6; if the length of the correction area 12 is greater than or equal to the preset length value, the bar patterns 13 are disposed on both sides of the initial correction pattern 10 adjacent to the correction end.
As an example, referring to fig. 4, when the length of the correction area is smaller than the preset length value, the end of the bar pattern 13 adjacent to the correction end has a preset distance from the correction end, and the distance between the end of the bar pattern 13 far from the correction end and the correction end is the sum of the length of the bar pattern 13 and the preset distance.
For example, referring to fig. 3 and 4, the predetermined distance may be equal to the width of the correction area, i.e., when the width of the correction area is denoted as H, the predetermined distance is also denoted as H.
In step S105, referring to step S105 in fig. 1 and fig. 4 and 6, the bar pattern 13 is combined with the initial correction pattern 10 to obtain the target pattern 11.
As an example, the bar pattern 13 may be combined with the initial correction pattern 10 by any conventional method that can achieve pattern combination to obtain the target pattern 11, which is not limited herein.
After the bar pattern 13 is combined with the initial correction pattern 10 to obtain the target pattern 11, both the initial correction pattern 10 and the bar pattern 13 in fig. 4 and 6 disappear, and only the target pattern 11 in fig. 4 and 6 is left, and the initial correction pattern 10 and the bar pattern 13 are purposely illustrated in fig. 4 and 6 for ease of understanding.
The target pattern 11 is a pattern for photolithography in the photomask after the photomask is formed.
In another embodiment, referring to fig. 7, an embodiment of the present application further provides a graphic correction system, including:
the acquisition module 20 is used for acquiring a design graph, wherein the design graph comprises a plurality of graphs to be corrected which are distributed at intervals;
the optical proximity correction module 21 is connected with the acquisition module 20, and is used for performing optical proximity correction on the design pattern to obtain a plurality of initial correction patterns which are distributed at intervals;
the mask rule checking module 22, the mask rule checking module 22 is connected with the optical proximity correction module 21, and is used for obtaining a correction area violating the minimum rule of the mask plate in the initial correction pattern and removing the correction area;
the pattern correction module 23, the pattern correction module 23 is connected with the mask rule inspection module 22, and is used for setting a strip pattern on the side edge of the initial correction pattern based on the correction area; and merging the strip pattern with the initial correction pattern to obtain the target pattern.
As an example, the pattern correction system may further include a stripe pattern setting module 24, where the stripe pattern setting module 24 is connected to both the mask rule checking module 22 and the pattern correction module 23, and is configured to set a preset length value based on the convergence degree; obtaining the length of the bar pattern and the width of the bar pattern based on the preset length value, the length of the correction area and the width of the correction area; and setting the position of the bar pattern based on the preset length value and the length of the correction area.
In the pattern correction system, the optical proximity correction module 21 corrects the design pattern in the process of lithography to obtain an initial correction pattern, the mask rule inspection module 22 removes the area of the correction pattern violating the minimum rule of the mask, and the pattern correction module 23 repairs the strip pattern on the side of the correction pattern based on the removed area to obtain a new target pattern. The system is used for correcting the design graph, so that the convergence degree and accuracy of the graph can be improved, the accuracy of photoetching is ensured, and the performance of a product is further ensured.
The respective modules in the above-described updating system of the target image may be implemented in whole or in part by software, hardware, and combinations thereof. The above modules may be embedded in hardware or may be independent of a processor in the computer device, or may be stored in software in a memory in the computer device, so that the processor may call and execute operations corresponding to the above modules.
It will be appreciated by those skilled in the art that the structure shown in FIG. 7 is merely a block diagram of some of the structures associated with the present inventive arrangements and is not limiting of the computer device to which the present inventive arrangements may be applied, and that a particular computer device may include more or fewer components than shown, or may combine some of the components, or have a different arrangement of components.
In yet another embodiment, as shown in fig. 8, a method for preparing a photomask is provided, which may include the following steps:
s301: obtaining a target graph by adopting the graph correction method in the embodiment;
s302: and transferring the target pattern onto a transparent substrate to obtain the photomask.
In step S301, please refer to step S301 in fig. 8 in combination with fig. 1 to 6, and the target pattern is obtained by using the pattern correction method in the above embodiment.
As an example, the target pattern may be obtained in step S301 by using the pattern correction method in the embodiment corresponding to fig. 1 to 6.
In step S302, referring to step S302 in fig. 8, a target pattern is transferred onto a transparent substrate to obtain a photomask.
As an example, the transparent substrate may include, but is not limited to, a glass substrate.
As an example, an opaque metal layer, such as a chromium layer or the like, may be plated on the transparent substrate; and then, patterning the metal layer through etching and other processes, so that the target pattern can be transferred to the transparent substrate, and the photomask is obtained.
In the preparation method of the photomask, in the preparation process of the photomask, the optical proximity effect correction is carried out on the design pattern in the process of the photomask to obtain an initial correction pattern, then the area of the correction pattern which violates the minimum rule of the photomask is removed, the strip pattern is arranged on the side edge of the correction pattern through the removed area to repair the strip pattern, so that a new target pattern is obtained, and then the target pattern is moved to the transparent substrate. The photomask obtained by the method can ensure the accuracy of the photoetching technology and further ensure the performance of photoetching products.
The pattern correction method of the application obtains an initial correction pattern by carrying out optical proximity effect correction on a design pattern in a photolithography process, removes a region of the correction pattern which violates a minimum rule of a mask, and repairs a strip pattern arranged on the side edge of the correction pattern through the removed region to obtain a new target pattern. The method is used for correcting the design graph, and the unexpected effects of the application are as follows: the convergence and accuracy of the graph can be improved, the accuracy of photoetching is ensured, and the performance of the product is further ensured.
According to the pattern correction system, the optical proximity correction module corrects the design pattern in the photoetching process to obtain an initial correction pattern, the mask rule inspection module removes the area of the correction pattern which violates the minimum rule of the mask plate, and the pattern correction module repairs the strip pattern arranged on the side edge of the correction pattern based on the removed area to obtain a new target pattern. The system is used for correcting the design graph, and the unexpected effects of the application are as follows: not only can the convergence degree and the accuracy of the graph be improved and the photoetching accuracy be ensured, but also the performance of the product is further ensured.
Those skilled in the art will appreciate that implementing all or part of the above described methods may be accomplished by way of a computer program stored on a non-transitory computer readable storage medium, which when executed, may comprise the steps of the embodiments of the methods described above. Any reference to memory, database, or other medium used in embodiments provided herein may include at least one of non-volatile and volatile memory. The nonvolatile Memory may include Read-Only Memory (ROM), magnetic tape, floppy disk, flash Memory, optical Memory, high density embedded nonvolatile Memory, resistive random access Memory (ReRAM), magnetic random access Memory (MagnetoresistiveRandom Access Memory, MRAM), ferroelectric Memory (Ferroelectric Random Access Memory, FRAM), phase change Memory (Phase Change Memory, PCM), graphene Memory, and the like. Volatile memory can include Random access memory (Random AccessMemory, RAM) or external cache memory, and the like. By way of illustration, and not limitation, RAM can be in the form of a variety of forms, such as static random access memory (Static Random Access Memory, SRAM) or dynamic random access memory (Dynamic Random Access Memory, DRAM), and the like. The databases referred to in the embodiments provided herein may include at least one of a relational database and a non-relational database. The non-relational database may include, but is not limited to, a blockchain-based distributed database, and the like. The processor referred to in the embodiments provided in the present application may be a general-purpose processor, a central processing unit, a graphics processor, a digital signal processor, a programmable logic unit, a data processing logic unit based on quantum computing, or the like, but is not limited thereto.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features of the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the claims. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.
Claims (10)
1. A pattern correction method, comprising:
obtaining a design graph, wherein the design graph comprises a plurality of graphs to be corrected which are distributed at intervals;
performing optical proximity correction on the design graph to obtain a plurality of initial correction graphs which are distributed at intervals;
acquiring a correction area which violates a minimum rule of a mask plate in the initial correction graph, and removing the correction area;
setting a strip pattern on the side edge of the initial correction pattern based on the correction area;
and merging the strip pattern with the initial correction pattern to obtain a target pattern.
2. The pattern correction method according to claim 1, characterized in that: the obtaining the correction area of the initial correction pattern, which violates the minimum rule of the mask plate, comprises the following steps:
and detecting the minimum rule of the mask plate for the initial correction pattern, and determining the area which does not accord with the minimum rule of the mask plate as the correction area.
3. The pattern correction method according to claim 1, characterized in that: the correction area is positioned between adjacent initial correction patterns; the step of setting the bar graph on the side of the initial correction graph based on the correction area comprises the following steps:
setting a preset length value based on the convergence degree;
obtaining the length of the strip pattern and the width of the strip pattern based on the preset length value, the length of the correction area and the width of the correction area;
and setting the position of the strip pattern based on the preset length value and the length of the correction area.
4. A pattern correction method according to claim 3, characterized in that: the obtaining the length of the bar pattern and the width of the bar pattern based on the preset length value, the length of the correction area and the width of the correction area includes:
if the length of the correction area is smaller than the preset length value, setting the length of the strip-shaped pattern to be the same as the length of the correction area, wherein the width of the strip-shaped pattern is X times the width of the correction area;
if the length of the correction area is greater than or equal to the preset length value, setting the length of the strip-shaped pattern to be Y times the length of the correction area, and setting the width of the strip-shaped pattern to be X times the width of the correction area, wherein X=0.1-5, and Y=0.2-0.8.
5. The pattern correction method according to claim 4, characterized in that: the end of the initial correction graph, where the correction area is arranged, is recorded as a correction end; the setting the position of the bar graph based on the preset length value and the length of the correction area includes:
if the length of the correction area is smaller than the preset length value, the strip-shaped pattern is arranged on one side adjacent to the correction end;
and if the length of the correction area is greater than or equal to the preset length value, the strip-shaped patterns are arranged on two sides adjacent to the correction end.
6. The pattern correction method according to claim 5, characterized in that: when the length of the correction area is smaller than the preset length value, one end, close to the correction end, of the bar-shaped graph is a preset distance from the correction end, and the distance between one end, far away from the correction end, of the bar-shaped graph and the correction end is the sum of the length of the bar-shaped graph and the preset distance.
7. The pattern correction method according to claim 6, characterized in that: the preset distance is equal to the width of the correction area.
8. A graphics correction system, comprising:
the device comprises an acquisition module, a correction module and a correction module, wherein the acquisition module is used for acquiring a design graph, and the design graph comprises a plurality of graphs to be corrected which are distributed at intervals;
the optical proximity correction module is connected with the acquisition module and used for carrying out optical proximity correction on the design pattern so as to obtain a plurality of initial correction patterns which are distributed at intervals;
the mask rule checking module is connected with the optical proximity correction module and is used for acquiring a correction area which violates the minimum rule of the mask plate in the initial correction pattern and removing the correction area;
the pattern correction module is connected with the mask rule checking module and is used for setting a strip pattern on the side edge of the initial correction pattern based on the correction area; and merging the strip pattern with the initial correction pattern to obtain a target pattern.
9. The graphics-modifying system of claim 8, wherein: the mask rule checking module is connected with the pattern correction module and used for setting a preset length value based on convergence; obtaining the length of the strip pattern and the width of the strip pattern based on the preset length value, the length of the correction area and the width of the correction area; and setting the position of the bar pattern based on the preset length value and the length of the correction area.
10. The preparation method of the photomask plate is characterized by comprising the following steps:
obtaining the target pattern using the pattern correction method according to any one of claims 1 to 7;
and transferring the target pattern to a transparent substrate to obtain the photomask.
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