CN115047707A - Optical proximity correction method and system, mask, equipment and storage medium - Google Patents

Abstract

An optical proximity correction method and system, a mask, a device and a storage medium, the optical proximity correction method comprising: providing a design pattern, including a plurality of main patterns, at least some adjacent main patterns are formed with concave corners; Based on design rules and mask writing rules, a corner additional graphic is generated in the main graphic corresponding to the vertex of the concave corner; based on the target graphic, optical proximity effect correction is performed on the design graphic to obtain a corrected graphic; The modified pattern is subjected to lithography simulation, and it is judged whether the edge placement error corresponding to each concave corner in the modified pattern satisfies the preset standard; when the edge placement error corresponding to the concave corner does not meet the preset standard, the A trimming process is performed on the modified graphics, for trimming and removing the corner additional graphics corresponding to the concave corners from the modified graphics. Embodiments of the present invention are beneficial to reduce edge placement errors at concave corners.

Description

Optical proximity correction method and system, mask, device and storage medium

technical field

Embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular, to an optical proximity correction method and system, a mask, a device, and a storage medium.

Background technique

In order to realize the transfer of the pattern from the mask to the surface of the silicon wafer, an exposure step, a development step performed after the exposure step, and an etching step after the development step are usually required. In the exposure step, light is irradiated onto the silicon wafer coated with photoresist through the light-transmitting area in the mask, and the photoresist undergoes a chemical reaction under the irradiation of light; Depending on the degree of dissolution of the photoresist to the developer, a photolithographic pattern is formed to realize the transfer of the pattern from the mask to the photoresist; in the etching step, the photoresist pattern formed based on the photoresist layer The silicon wafer is etched, and the pattern of the mask is further transferred to the silicon wafer.

However, as the size of the device shrinks, after the photolithography process, the difference between the pattern on the chip surface and the original mask pattern also increases, especially the corner caused by the Optical Proximity Effect (OPE). Corner rounding and line end shortening are typically observed phenomena.

In order to prevent the pattern on the chip from being inconsistent with the mask pattern caused by the optical proximity effect, the current solution is usually to perform optical proximity correction (OPC) on the mask pattern, and then perform pattern transfer according to the corrected mask pattern. . In the OPC correction program, a mask size check (MaskManufacturing Rule Check) is usually required to ensure the final pattern convergence and mask manufacturing accuracy.

However, the effect of optical proximity correction still needs to be improved at present.

SUMMARY OF THE INVENTION

The problem solved by the embodiments of the present invention is to provide an optical proximity correction method and system, a reticle, a device and a storage medium to reduce edge placement errors at concave corners.

In order to solve the above problem, an embodiment of the present invention provides an optical proximity correction method, which includes: providing a design pattern, including a plurality of main patterns, and at least some adjacent main patterns are formed with concave corners; A stencil writing rule, generating a corner additional graphic in the main graphic corresponding to the vertex of the concave corner; based on the target graphic, performing optical proximity effect correction on the design graphic to obtain a corrected graphic; Perform lithography simulation to determine whether the edge placement errors corresponding to the concave corners in the corrected graphics meet the preset standard; when the edge placement errors corresponding to the concave corners do not meet the preset standard, trim the corrected graphics. processing, for trimming and removing the corner additional graphics corresponding to the concave corners from the modified graphics.

Correspondingly, an embodiment of the present invention also provides an optical proximity correction system, including: a providing unit for providing a design graphic, including a plurality of main graphics, at least some adjacent main graphics are formed with concave corners; corner additional graphics The generating unit is used for generating corner additional graphics in the main graphics corresponding to the vertices of the concave corners based on the design rules and the mask writing rules; the optical proximity effect correction unit is used for modifying the design based on the target graphics Performing optical proximity effect correction on the graphic to obtain a corrected graphic; a judging unit for performing lithography simulation on the corrected graphic, and judging whether the edge placement error corresponding to each concave corner in the corrected graphic meets a preset standard; A trimming unit, configured to trim and remove corner additional graphics corresponding to the concave corner from the corrected graphics when the edge placement error corresponding to the concave corner does not meet a preset standard.

Correspondingly, an embodiment of the present invention further provides a mask including a pattern obtained by using the optical proximity correction method provided by the embodiment of the present invention.

Correspondingly, an embodiment of the present invention further provides a device including at least one memory and at least one processor, wherein the memory stores one or more computer instructions, wherein the one or more computer instructions are executed by the processor Execute to implement the optical proximity correction method provided by the embodiment of the present invention.

Correspondingly, the embodiments of the present invention further provide a storage medium, where the storage medium stores one or more computer instructions, and the one or more computer instructions are used to implement the optical proximity correction method provided by the embodiments of the present invention.

Compared with the prior art, the technical solutions of the embodiments of the present invention have the following advantages:

The optical proximity correction method provided by the embodiment of the present invention generates corner additional graphics in the main graphics corresponding to the vertices of the concave corners based on design rules and mask writing rules; Lithography simulation, judging whether the edge placement error corresponding to each concave corner in the corrected pattern meets the preset standard, and when it does not meet the preset standard, trimming the corrected pattern is used for extracting from the corrected pattern. The corner additional graphics corresponding to the concave corners are trimmed and removed from the graphics, so that after trimming and removing the additional graphics, a graphics opposite to the light transmission characteristic of the main graphics is formed in the modified graphics, and accordingly , in this embodiment of the present invention, for the concave corner vertices whose edge placement error does not meet the preset standard, a figure opposite to the light transmission characteristic of the main figure is set, which is beneficial to improve the light intensity distribution near the concave corner, and further improve the light intensity distribution at the concave corner. The problem of corner rounding is reduced, the edge placement error (EPE) near the concave corner is reduced, and the matching degree of the mask pattern formed on the wafer and the target pattern is improved.

Description of drawings

1 is a flowchart of an optical proximity correction method;

Fig. 2 is the corresponding schematic diagram of step s1 in Fig. 1;

Fig. 3 is the corresponding schematic diagram of step s2 in Fig. 1;

Fig. 4 is the corresponding schematic diagram of step s3 in Fig. 1;

Fig. 5 is the corresponding schematic diagram of step s4 in Fig. 1;

Fig. 6 is a partial enlarged view of Fig. 5 at the position of the dotted frame;

7 is a flowchart of an embodiment of an optical proximity correction method of the present invention;

Fig. 8 is the corresponding schematic diagram of step S1 in Fig. 7;

Fig. 9 is the corresponding schematic diagram of step S2 in Fig. 7;

Fig. 10 is the corresponding schematic diagram of step S3 in Fig. 7;

Fig. 11 is the corresponding schematic diagram of step S5 in Fig. 7;

Fig. 12 is a schematic diagram corresponding to step S7 in Fig. 7;

Fig. 13 is the corresponding schematic diagram of step S8 in Fig. 7;

Fig. 14 is a partial enlarged view at position A in Fig. 13;

Fig. 15 is a partial enlarged view at position B in Fig. 13;

16 is a functional block diagram of an embodiment of an optical proximity correction system of the present invention;

FIG. 17 is a hardware structure diagram of an embodiment of a device provided by the present invention.

Detailed ways

It can be known from the background art that the effect of optical proximity correction needs to be improved at present. Now combined with an optical proximity correction method to analyze the reasons why the effect of optical proximity correction needs to be improved. FIG. 1 is a flowchart of an optical proximity correction method. 2 to 6, the schematic diagrams corresponding to each step in the optical proximity correction method are shown, and the optical proximity correction method includes:

Referring to FIG. 2 , step s1 : providing a design graphic 10 , the design graphic 10 includes a plurality of rectangular graphics 20 , and the corners of adjacent rectangular graphics 20 are opposite to each other and have a single point of intersection (as shown by the dotted circle in FIG. 2 ). Wherein, the design pattern 10 is used to form a cutting layer pattern, and the cutting layer pattern is used to cut off the fin portion 30 along the extending direction of the fin portion 30, and the fin portion 30 extends in the lateral direction (as shown in the x direction in FIG. 2 ). , and are arranged at intervals along the longitudinal direction (as shown in the y direction in FIG. 2 ), and the lateral direction is perpendicular to the longitudinal direction.

Referring to FIG. 3 , step s2 : performing an etching bias compensation process on the design pattern 10 to obtain an etching compensation pattern 40 .

Referring to FIG. 4 , step s3 : taking the etching compensation pattern 40 as a target pattern (Target), performing optical proximity effect (OPC) correction processing on the etching compensation pattern 40 to obtain a corrected pattern 45 .

Referring to FIG. 5 , step s4 : perform optical proximity effect verification on the corrected pattern 45 to obtain a simulated exposure pattern 60 , and calculate the edge placement error (EPE) between the simulated exposure pattern 60 and the target pattern.

In the semiconductor field, in the process of optical proximity effect correction processing, at the inner corner of the pattern, part of the edge of the inner corner is usually pushed inward to improve the exposure light intensity near the inner corner. The distribution of , and then improve the corner rounding (Corner Rounding).

However, as shown in FIG. 2 , since the corners of the adjacent rectangular patterns 20 are opposite to each other and only have a single point of intersection (as shown in the dotted circle in FIG. 2 ), as shown in FIG. 3 , even if the etching compensation deviation is processed at Extend the edge of the design pattern 10 outward by a certain distance along the lateral direction (as shown in the x direction in FIG. 3 ), and at the position close to the single point of intersection, the lateral overlap width between the edges of two adjacent rectangular figures 20 The RL is still small, as shown in FIG. 4 , in the process of performing the optical proximity effect correction processing on the etching compensation pattern 40 , there is not enough space at the position close to the single point to move the edge of the pattern toward the edge of the pattern. Introduced, it is easy to form a single point of intersection at the opposite corner between adjacent graphics (as shown in the dotted circle in Figure 4), and the effect of optical proximity effect correction is not good.

Correspondingly, as shown in FIG. 5, in the simulated exposure pattern 60, at the position near the single point where the adjacent patterns intersect, the problem of corner rounding is serious, resulting in a large edge placement error EPE of the simulated exposure pattern 60 ( As shown in Figure 6). The simulated exposure pattern 60 is used to cut off the fins 30 along the extending direction of the fins 30. The edge placement error EPE of the simulated exposure pattern 60 is relatively large. Correspondingly, after the fin cutting process, the line ends of the fins 30 are The shrinkage problem is serious, and the edge placement error EPE will be enlarged after the etching process, which further aggravates the line end shortening problem of the fins 30 .

In the semiconductor process, after the fin cutting process is performed, a gate structure that spans the fin 30 and covers part of the top and part of the sidewall of the fin 30 is usually formed. The line end of the fin 30 is retracted. Seriously, correspondingly, in the process of forming the gate structure, at the position close to the line end of the fin 30 , it is easy to cause the gate structure to hardly cover part of the top and sidewall of the fin 30 , which leads to the difficulty of covering part of the top and sidewall of the fin 30 , which leads to Device failure at line end location.

In order to solve the technical problem, embodiments of the present invention provide an optical proximity correction method. Referring to FIG. 7 , a flowchart of an embodiment of the optical proximity correction method of the present invention is shown.

As an example, the optical proximity correction method described in this embodiment includes the following basic steps:

Step S1: providing design graphics, including a plurality of main graphics, at least some adjacent main graphics are formed with concave corners;

Step S3: based on design rules and mask writing rules, generate corner additional graphics in the main graphics corresponding to the vertices of the concave corners;

Step S5: based on the target graphic, perform optical proximity effect correction on the design graphic to obtain a modified graphic;

Step S6: performing lithography simulation on the corrected pattern, and judging whether the edge placement error corresponding to each concave corner in the corrected pattern satisfies a preset standard;

Step S7: when the edge placement error corresponding to the concave corner does not meet the preset standard, trimming the modified graphic is used for trimming and removing the corner additional corresponding to the concave corner from the modified graphic. graphics.

The optical proximity correction method further includes step S2: after providing the design graphic, generating a corner additional graphic in the main graphic corresponding to the vertex of the concave corner, and before performing the optical proximity effect correction on the design graphic, correcting the design graphic. The design pattern is subjected to etching deviation compensation, and the design pattern after the etching deviation compensation is performed is used as the target pattern.

The optical proximity correction method further includes step S4 : providing auxiliary graphics around the main graphics after performing the etching deviation compensation processing on the design graphics and before performing the optical proximity effect correction processing.

The optical proximity correction method further includes: Step S8: when the edge placement error corresponding to the concave corner meets a preset standard, perform optical proximity effect verification on the corrected graphic; When the edge placement error does not meet the preset standard, after trimming the modified graphics, perform optical proximity effect verification on the trimmed graphics after trimming.

In the optical proximity correction method provided by the embodiment of the present invention, based on the design rules and the mask writing rules, the corner additional graphics are generated in the main graphics corresponding to the vertices of the concave corners; Perform lithography simulation to determine whether the edge placement errors corresponding to the concave corners in the corrected graphics meet a preset standard, and when the preset standard is not met, trim the corrected graphics for extracting from the corrected graphics. The corner additional graphics corresponding to the concave corners are trimmed and removed from the rear graphics, so that after trimming and removal of the corner additional graphics corresponding to the concave corners, a light transmission characteristic opposite to that of the main graphics is formed in the modified graphics Correspondingly, in the embodiment of the present invention, for the concave corner vertices whose edge placement error does not meet the preset standard, a graphic opposite to the light transmission characteristic of the main graphic is set, which is beneficial to improve the light intensity distribution near the concave corner, and further The corner rounding problem at the concave corner is improved, the edge placement error near the concave corner is reduced, and the matching degree between the mask pattern formed on the wafer and the target pattern is improved.

In order to make the above objects, features and advantages of the embodiments of the present invention more clearly understood, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

Referring to FIG. 8 , step S1 is performed: providing a design pattern 100 , including a plurality of main patterns 110 , and concave corners are formed between at least some adjacent main patterns 110 .

After the optical proximity correction is performed on the design pattern 100, the obtained pattern is used to make a mask, so that a photolithography process is performed by using the mask to form a corresponding mask pattern on the wafer.

In the design pattern 100, concave corners are formed between at least part of the adjacent main patterns 110. In the semiconductor field, the correction of the optical proximity effect of the position of the corner is more difficult. The graphic 100 is designed to perform OPC, so as to significantly improve the effect of OPC.

In this embodiment, in the design pattern 100, at the concave corners, the corners of adjacent main patterns 110 are opposite to each other and have a single point (Single Point) that intersects. In the semiconductor field, due to Mask Making Constraints (MRC), it is difficult to correct the optical proximity effect of a design pattern with a single point corner. The single-point design pattern 100 is subjected to optical proximity correction, which is beneficial to significantly improve the effect of optical proximity correction.

In this embodiment, the design pattern 100 is used to form a cutting layer pattern, and the cutting layer pattern is used to cut the layer to be cut along the first direction, and the layer to be cut is along the first direction (as shown in FIG. 8 ). shown in the X direction in the middle) and are arranged at intervals along the second direction (shown in the Y direction in FIG. 8 ), the first direction is perpendicular to the second direction.

The layer to be cut is a target layer to be cut, and the layer to be cut includes the fins 120 , gates or metal interconnect lines. Wherein, the fin portion 120 is used to form a fin field effect transistor; the gate can be a dummy gate or a device gate.

In this embodiment, the layer to be cut is the fin 120 as an example for description. Accordingly, the design pattern 100 is used to form a mask for a fin cut process.

In this embodiment, the main graphic 110 is a rectangular graphic. The design pattern 100 includes a plurality of rectangular patterns 110, which is friendly to the mask manufacturing process and correction of optical proximity effect, and the result is controllable.

In this embodiment, the main graphic 110 is a rectangular graphic, the main graphic 110 includes a first side 111 and a second side 112 that intersect and the intersection point is a concave corner vertex, the first side is along the first direction, and the second side is In the second direction, the main graphic 110 further includes a third side 113 parallel to the second side 112 .

Referring to FIG. 9 , step S2 : performing etching deviation compensation on the design pattern 100 , and the design pattern 100 after the etching deviation compensation is used as a target pattern (Target). Etching offset compensation is performed on the design pattern 100 for compensating the critical dimension of the design pattern 100 based on the etching offset.

After the photolithography process and the etching process are performed, the critical dimension of the pattern formed on the wafer deviates from the critical dimension of the design pattern 100 . The deviation that may be generated by the etching process is pre-compensated into the design pattern 100, thereby improving the matching degree between the pattern formed on the wafer and the design pattern 100 after the photolithography and etching processes are performed

In this embodiment, the step of performing the etching deviation compensation process on the design pattern 100 includes: moving the edge of the design pattern 100 outward along a direction perpendicular to the edge of the design pattern 100 by a preset distance, so as to adjust the design pattern 100 A line width is added to the edge of the pattern 100 to compensate for the etch offset.

In this embodiment, the etching offset can be obtained from experimental data.

Referring to FIG. 10, step S3: based on the design rule (Design Rule) and the mask writing rule (MaskWriting Rule), generate a corner additional graphic (signed corner accessional layer, sCAL) in the main graphic 110 corresponding to the vertex of the concave corner )130.

In the field of semiconductors, it is very difficult to correct the optical proximity effect at the concave corners. By first generating the corner additional graphics 130 in the main graphics 110 corresponding to the vertices of the concave corners, the optical proximity effect correction is performed on the design graphics later to obtain the correction. After the modified graphics, when the edge placement error corresponding to the concave corners of the modified graphics does not meet the preset standard, the modified graphics can be trimmed to remove the corresponding corner additional graphics 130 from the modified graphics to improve the edge placement accordingly. The error does not meet the light intensity distribution near the concave corners of the preset standard, thereby improving the corner rounding problem at the concave corners and reducing the edge placement error.

In this embodiment, the corner additional graphics 130 are rectangular graphics. The rectangular pattern is beneficial to improve the friendliness of mask making.

In this embodiment, in the step of generating the corner additional pattern 130, the line width of the corner additional pattern 130 is greater than or equal to the minimum line width of the mask writing rule, and less than or equal to the resolution of the photolithography process.

The line width of the corner additional graphics 130 is greater than or equal to the minimum line width of the mask writing rule, so that when the corrected graphics is trimmed and the corresponding corner additional graphics 130 are trimmed and removed from the corrected graphics, the remaining correction The back pattern is highly friendly to mask writing, and the pattern corresponding to the corner additional pattern 130 can be made in the mask, thereby improving the light intensity distribution during exposure.

In addition, the line width of the additional corner pattern 130 is smaller than the resolution of the photolithography process, thereby preventing the pattern of the additional corner pattern 130 from being formed on the wafer during photolithography, thereby preventing the formation of the pattern on the wafer. produce adverse effects.

In this embodiment, in the step of generating the corner additional graphic 130, along the first direction, the distance from the geometric center of the corner additional graphic 130 to the second side is a first distance Lx, and the first distance Lx A distance is greater than or equal to the minimum line width min_MRC_CD of the mask writing rule.

In the process of mask writing, the smaller the line width, the greater the difference and error of mask writing. Therefore, by making the first distance greater than or equal to min_MRC_CD, the mask writing is improved. The friendliness of the reticle reduces the probability of errors in mask writing.

Similarly, in the step of generating the additional corner graphics 130, along the first direction, the distance from the geometric center of the corner additional graphics 130 to the third side 113 is greater than or equal to the mask writing Enter the minimum line width min_MRC_CD of the rule to improve the friendliness of mask writing.

In this embodiment, along the second direction, the distance from the geometric center of the corner additional graphic 130 to the first side 111 is a second distance Ly, and the second distance Ly is greater than or equal to the first side 111 The distance to the adjacent layer to be cut.

In the process of integrated circuit design, in the design rule, for a pattern with concave corners, the distance between the concave corner and the adjacent layer to be cut has a minimum limit L0, therefore, by making the second distance Ly greater than or equal to the first The distance from the edge 111 to the adjacent layer to be cut, so as to meet the requirements of the design rule.

Moreover, the second distance Ly is less than or equal to the sum of the distance L0 from the first side 111 to the adjacent layer to be cut along the second direction and the pitch (Pitch) P of the layer to be cut.

In this embodiment, when the problem of corner rounding occurs during exposure, the to-be-cut layer adjacent to the concave corner is subject to corner rounding compared with the to-be-cut layer not adjacent to the concave corner The impact of the problem is more significant. The edge placement error of the exposed pattern at the position of the layer to be cut adjacent to the concave corner is large. When using the exposed pattern to cut the layer to be cut, the edge adjacent to the concave corner is placed The problem of wire end retraction of the layer to be cut is more serious, therefore, the second distance Ly is less than or equal to the sum of L0 and P, thereby significantly improving the problem of wire end retraction at the position of the layer to be cut adjacent to the concave corner .

Step S4 : after the etching deviation compensation process is performed on the design pattern 100 , an auxiliary pattern (not shown) is provided around the main pattern 110 .

In this embodiment, the main pattern 110 is an exposable pattern, and the auxiliary pattern is a non-exposed pattern. Scattering bars are arranged around the main pattern 110, which is beneficial to improve the light intensity contrast and reduce the edge placement error (Edge Placement Error, EPE). ), and it is also beneficial to increase the depth of focus, thereby improving the lithography process window. Specifically, the auxiliary graphic is a Scattering Bar (SB).

Referring to FIG. 11 , step S5 : based on the target graphic, perform optical proximity effect correction on the design graphic 100 to obtain a modified graphic 200 . The optical proximity effect correction processing is used to adjust the outline of the design pattern 100 to alleviate the problem of graphic distortion caused by the optical proximity effect. The modified pattern 200 is used to make a mask.

Specifically, taking the design pattern 100 after the etching deviation compensation process as the target pattern, the optical proximity effect correction is performed on the design pattern 100 after the etching deviation process.

In this embodiment, the target pattern (Target) refers to the target pattern after exposure, which is used as a reference for the edge placement error of the exposure pattern obtained by lithography simulation.

In this embodiment, a model-based optical proximity effect correction (Model-based OPC) is used to perform the optical proximity effect correction processing as an example for description. In other embodiments, the optical proximity correction processing based on empirical rules (Rule-based OPC), or the optical proximity correction based on a mixture of model-based and empirical rules can also be used to perform the optical proximity correction processing. In other embodiments, other suitable optical proximity effect correction methods may also be selected.

In this embodiment, the performing the optical proximity effect correction process includes: performing a division process on the edge of the design pattern 100 to obtain a plurality of segments; performing a lithography simulation step for correcting based on the optical proximity effect model, perform lithography simulation on the design pattern 100 to obtain a simulated exposure pattern; perform a calculation step for comparing the simulated exposure pattern with the target pattern to obtain the edge placement error EPE corresponding to the simulated exposure pattern; perform an adjustment step , used to adjust the position of the line segment based on the edge placement error EPE; the lithography simulation steps, calculation steps and adjustment steps performed once constitute a correction cycle, and iterative processing of multiple correction cycles is performed until the design is consistent with the design. The edge placement error of the simulated exposure pattern corresponding to the pattern 100 is within a preset threshold range.

Iterative processing of multiple correction cycles is performed until the edge placement error corresponding to the design pattern 100 converges and meets the requirements of the preset threshold range.

Step S6: Perform lithography simulation on the modified pattern 200 to determine whether the edge placement error EPE corresponding to each concave corner in the modified pattern 200 meets a preset standard.

In the field of semiconductors, it is difficult to correct the optical proximity effect at the position of the concave corner. After the optical proximity effect correction process, it is determined whether the edge placement error EPE corresponding to each concave corner in the corrected pattern 200 satisfies the preset The standard is used to facilitate subsequent adjustments to the graphics near the concave corners where the edge placement error does not meet the preset standard, thereby helping to significantly improve the effect of optical proximity correction.

In particular, in this embodiment, in the design pattern 100, at the concave corners, the corners of the adjacent main patterns 110 are opposite to each other, and have a single point (Single Point) that intersects. In the field of semiconductors, due to Mask Making Constraints (MRC), it is more difficult to correct the optical proximity effect of a design pattern with a single point corner, which is near the corner near the single point. The probability that the edge placement error does not meet the preset standard is relatively large, which is beneficial to perform optical proximity correction for the design pattern 100 with intersecting single points, which is beneficial to significantly improve the effect of optical proximity effect correction and improve the efficiency of optical proximity correction. .

In this embodiment, the design pattern 100 is used to form a cutting layer pattern, and the cutting layer pattern is used to cut the to-be-cut layer along the first direction, and accordingly, determine the edge of the concave corner along the second direction Whether the corresponding edge placement error satisfies the preset standard, so as to ensure that after the layer to be cut is cut by the cutting layer pattern, the problem of the retraction of the line end of the layer to be cut can be improved.

Referring to FIG. 12 , step S7 : when the edge placement error corresponding to the concave corner does not meet the preset standard, trimming processing is performed on the modified graphic 200 for trimming and removing the concave corner from the modified graphic 200 . Corresponding to the corner additional graphics 130 .

In this embodiment, it is judged whether the edge placement errors corresponding to the concave corners in the revised figure 200 satisfy the preset standard, and when the pre-set standard is not satisfied, the revised figure 200 is trimmed, so that the revised figure 200 can be trimmed from the revised figure 200. In 200, the corner additional graphics 130 corresponding to the concave corners are trimmed and removed, so that after the additional graphics 130 are trimmed and removed, the modified graphics 200 are formed in the modified graphics 200 with the opposite light transmittance characteristics of the main graphics 110, Correspondingly, in this embodiment, for the concave corner vertices whose edge placement error does not meet the preset standard, a figure opposite to the light transmittance characteristic of the main figure 110 is set, which is beneficial to improve the light intensity distribution near the concave corner, thereby improving the concave corner. Corner rounding problems at the corners, reducing edge placement errors near concave corners, and improving the matching of the mask pattern formed on the wafer with the target pattern.

In this embodiment, the design pattern 100 is used to form a cutting layer pattern, and the cutting layer pattern is used to cut the to-be-cut layer along the first direction, and the to-be-cut layer is the fin 120 . By improving the corner rounding problem at the concave corner and reducing the edge placement error near the concave corner, it is beneficial to improve the line end retraction problem of the fin 120 after the fin cutting process using the cutting mask layer.

In the semiconductor manufacturing process, after the fin cutting process is performed, a gate across the fin 120 is usually formed, and the gate covers part of the top and part of the sidewall of the fin 120. In this embodiment, after the fin cutting process is performed, the fin is The line end retraction problem of the 120 has been significantly improved. Accordingly, in the subsequent process of forming the gate, it is beneficial to ensure that the relative positional relationship between the gate and the fin 120 can meet the design requirements, and the gate can span the fin. At least part of the fins 120 can be exposed on both sides of the gate, thereby helping to prevent device failures at the ends of the fins 120, improving the process yield and improving the performance of the semiconductor structure.

Step S8: When the edge placement error corresponding to the concave corner meets the preset standard, perform optical proximity effect verification (OPC Verification) on the corrected graphic; or, when the edge placement error corresponding to the concave corner does not satisfy In the preset standard, after trimming the modified graphic 200, the optical proximity effect verification is performed on the trimmed graphic 200 after trimming.

Optical Proximity Verification is used to verify the effect of optical proximity correction processing. Specifically, the optical proximity effect verification is used to verify the edge placement error corresponding to the corrected pattern 200 .

As shown in FIG. 13 , it can be seen from the foregoing description that after trimming the corrected image 200 , it is beneficial to improve the light intensity distribution near the corner of a single point during exposure, and to improve the corner circle near the corner of a single point. Therefore, the edge placement error (EPE) between the simulated exposure pattern 220 and the target pattern 210 is reduced, and the matching degree between the mask pattern formed on the wafer and the target pattern 210 is improved.

Specifically, as shown in FIG. 14 and FIG. 15 , the partial enlarged views of FIG. 13 at position A and position B are respectively shown. In the figure, the outline of the simulated exposure pattern 220 in this embodiment is represented by a solid line and represented by a dotted line. The contour of the exposure pattern is simulated in the prior art. It can be seen from the figure that, compared with the prior art, the simulated exposure pattern 220 of this embodiment has a smaller edge placement error EPE near the corner, which is beneficial to improve the line end retraction of the layer to be cut.

In addition, in this embodiment, before the corner additional pattern 130 is provided, the design pattern 100 is also subjected to etching deviation compensation processing. Therefore, after the optical proximity effect correction processing is performed, the corrected pattern 200 is used to form a mask subsequently. The matching degree between the formed mask pattern and the target pattern 210 is high. Correspondingly, after the etching process is performed by using the mask pattern, the matching degree between the pattern formed on the wafer and the design pattern 100 is high.

Correspondingly, the present invention also provides an optical proximity correction system. 16 is a functional block diagram of an embodiment of the optical proximity correction system of the present invention.

In this embodiment, the optical proximity correction system 50 includes: a providing unit 501 for providing design graphics, including a plurality of main graphics, at least some adjacent main graphics are formed with concave corners; corner additional graphics generating unit 503 , for generating corner additional graphics in the main graphics corresponding to the vertices of the concave corners based on design rules and mask writing rules; the optical proximity effect correction unit 505 is used for modifying the design graphics based on the target graphics Performing optical proximity effect correction to obtain a corrected figure; the judging unit 506 is used to perform lithography simulation on the corrected figure, and judge whether the edge placement error corresponding to each concave corner in the corrected figure meets a preset standard; The trimming unit 507 is configured to trim and remove the corner additional graphics corresponding to the concave corner from the corrected graphics when the edge placement error corresponding to the concave corner does not meet a preset standard.

The corner additional graphics generation unit 503 is used to generate the corner additional graphics in the main graphics corresponding to the vertices of the concave corners based on the design rules and the mask writing rules; the judgment unit 506 is used for the modified graphics Perform a lithography simulation to determine whether the edge placement error corresponding to each concave corner in the corrected figure meets the preset standard; the trimming unit 507 is used for when the edge placement error corresponding to the concave corner does not meet the preset standard. , the additional graphics corresponding to the concave corners are trimmed and removed from the corrected graphics, so as to form a graphics opposite to the light transmission characteristics of the main graphics in the corrected graphics. The concave corner vertices that meet the preset standard, set the figure opposite to the light transmission characteristic of the main figure, which is beneficial to improve the light intensity distribution near the concave corner, thereby improving the corner rounding problem at the concave corner and reducing the close to the concave corner. Edge placement errors at the corners improve the matching of the mask pattern formed on the wafer to the target pattern.

The design pattern provided by the providing unit 501 is used to obtain a pattern for making a mask after optical proximity correction, so that a photolithography process is performed using the mask to form a corresponding mask pattern on the wafer.

In the design pattern, concave corners are formed between at least part of the adjacent main patterns. In the semiconductor field, the correction of the optical proximity effect of the position of the corner is more difficult. This embodiment is directed to the design pattern with concave corners. Perform optical proximity correction, which is beneficial to significantly improve the effect of optical proximity correction.

In this embodiment, in the design graphics, at the concave corners, the corners of adjacent main graphics are opposite to each other and have a single point of intersection. In the semiconductor field, due to the mask manufacturability rule (MRC), it is difficult to correct the optical proximity effect of the design pattern with a single point corner. Therefore, in this embodiment, the Designing graphics for optical proximity correction is beneficial to significantly improve the effect of optical proximity correction.

In this embodiment, the design pattern is used to form a cutting layer pattern, the cutting layer pattern is used to cut the to-be-cut layer along the first direction, the to-be-cut layer extends along the first direction and is arranged at intervals along the second direction , the first direction is perpendicular to the second direction.

The layer to be cut is the target layer to be cut, and the layer to be cut includes fins, gates or metal interconnect lines. Wherein, the fin is used to form a fin field effect transistor; the gate can be a dummy gate or a device gate.

In this embodiment, the layer to be cut is taken as an example of fins for description. Correspondingly, the design pattern is used to form a mask for the fin cutting process.

In this embodiment, the main graphic is a rectangular graphic. The design pattern includes a plurality of rectangular patterns, so that it is friendly to the mask manufacturing process and correction of optical proximity effect, and the result is controllable.

In this embodiment, the main graphic is a rectangular graphic, the main graphic includes a first side and a second side that intersect and the intersection point is the vertex of the concave corner, the first side is along the first direction, and the first side is along the first direction. The two sides are along the second direction, and the main graphic further includes a third side parallel to the second side.

In this embodiment, the optical proximity correction system 50 further includes: an etching deviation compensation unit 502, which is used for performing etching deviation compensation on the design pattern, and is also used for compensating the design pattern after etching deviation compensation. It is output to the optical proximity effect correction unit as the target pattern.

The etching offset compensation unit 502 is used for compensating the critical dimension of the design pattern based on the etching offset. After the photolithography process and the etching process are performed, the critical dimension of the pattern formed on the wafer is deviated from the critical dimension of the design pattern. By performing the etching deviation compensation process on the design pattern, the photolithography process and the etching process The possible deviation is pre-compensated into the design pattern, thereby improving the matching degree between the pattern formed on the wafer and the design pattern after the photolithography and etching process

In this embodiment, the etching deviation compensation unit 502 is configured to move the edge of the design pattern outward by a preset distance along a direction perpendicular to the edge of the design pattern, so as to add a line width to the edge of the design pattern to Compensate for etch offset.

The corner additional graphics generation unit 503 is configured to generate a corner additional graphics in the main graphics corresponding to the vertices of the concave corners based on the design rules and the mask writing rules.

In the field of semiconductors, it is very difficult to correct the optical proximity effect at the concave corners. The corner additional graphics generating unit 503 generates additional corner graphics in the main graphics corresponding to the vertices of the concave corners, so that the optical proximity effect correcting unit 505 can correct the design graphics. After optical proximity effect correction is performed, after the corrected figure is obtained, when the judgment unit 506 judges that the edge placement error corresponding to the concave corner of the corrected figure does not meet the preset standard, the trimming unit 507 can perform a trimming process on the corrected figure, so as to obtain the corrected figure from the corrected figure. Post-pattern trimming removes the corresponding corner additional graphics, correspondingly improves the light intensity distribution near the concave corner whose edge placement error does not meet the preset standard, thereby improving the corner rounding problem at the concave corner and reducing the edge placement error.

In this embodiment, the corner additional graphics are rectangular graphics. The rectangular pattern is beneficial to improve the friendliness of mask making.

In this embodiment, the line width of the corner additional pattern is greater than or equal to the minimum line width of the mask writing rule, and less than or equal to the resolution of the photolithography process.

The line width of the corner additional graphics is greater than or equal to the minimum line width of the mask writing rule, so that the trimming unit 507 trims the corrected graphics, and after trimming and removing the corresponding corner additional graphics from the corrected graphics, the remaining modified graphics The back graphics are highly friendly to mask writing, and graphics corresponding to the corner additional graphics can be made in the mask, thereby improving the light intensity distribution during exposure.

In addition, the line width of the corner additional pattern is smaller than the resolution of the lithography process, thereby preventing the pattern of the corner additional pattern from being formed on the wafer during lithography, thereby preventing the pattern formed on the wafer from being defective. influences.

In this embodiment, along the first direction, the distance from the geometric center of the corner additional graphic to the second side is a first distance Lx, and the first distance is greater than or equal to the minimum mask writing rule Line width min_MRC_CD.

In the process of mask writing, when the line width is smaller, the difference and error of mask writing are also greater. Therefore, by making the first distance greater than or equal to min_MRC_CD, the mask writing is improved. The friendliness of input and the probability of errors in mask writing are reduced.

Likewise, in the step of generating the corner additional graphics, along the first direction, the distance from the geometric center to the third edge is greater than or equal to the minimum line width min_MRC_CD of the mask writing rule.

In this embodiment, along the second direction, the distance from the geometric center of the corner additional figure to the first side is a second distance Ly, and the second distance Ly is greater than or equal to the distance from the first side to the adjacent layer to be cut .

In the process of integrated circuit design, in the design rule, for a pattern with concave corners, the distance between the concave corner and the adjacent layer to be cut has a minimum limit L0, therefore, by making the second distance Ly greater than or equal to The distance from the first edge to the adjacent layer to be cut, in order to meet the requirements of the design rules.

In addition, the second distance Ly is less than or equal to the sum of the distance L0 from the first edge to the adjacent layer to be cut along the second direction and the pitch (Pitch) P of the layer to be cut.

In this embodiment, when the problem of corner rounding occurs during exposure, the to-be-cut layer adjacent to the concave corner is subject to corner rounding compared with the to-be-cut layer not adjacent to the concave corner The impact of the problem is more significant. The edge placement error of the exposed pattern at the position of the layer to be cut adjacent to the concave corner is large. When using the exposed pattern to cut the layer to be cut, the edge adjacent to the concave corner is placed The problem of wire end retraction of the layer to be cut is more serious, therefore, the second distance Ly is less than or equal to the sum of L0 and P, thereby significantly improving the problem of wire end retraction at the position of the layer to be cut adjacent to the concave corner .

In this embodiment, the optical proximity correction system 50 further includes: an auxiliary graphic adding unit 504 for providing an auxiliary graphic around the main graphic of the design graphic output by the etching deviation compensation unit 502, and for adding the auxiliary graphic and main graphics are output to the optical proximity effect correction unit 505 .

In this embodiment, the main pattern is an exposable pattern, and the auxiliary pattern is a non-exposed pattern. Scattering bars are arranged around the main pattern, which is beneficial to improve the light intensity contrast, reduce the edge placement error (EPE), and also It is beneficial to increase the depth of focus, thereby improving the photolithography process window. Specifically, the auxiliary graphics are scattering bars.

The optical proximity effect correction unit 505 is used to adjust the outline of the design graphic to alleviate the problem of graphic distortion caused by the optical proximity effect. The corrected pattern is used to make a mask.

Specifically, taking the design pattern output by the etching deviation compensation unit 502 as the target pattern, the optical proximity effect correction is performed on the design pattern output by the etching deviation compensation unit 502 .

In this embodiment, the target pattern (Target) refers to the target pattern after exposure, which is used as a reference for the edge placement error of the exposure pattern obtained by lithography simulation.

In this embodiment, the optical proximity effect correction unit 505 is used as an example for model-based optical proximity correction (Model-based OPC) as an example for description. In other embodiments, the optical proximity effect correction unit may also be an empirical rule-based optical proximity effect correction (Rule-based OPC), or a mixture of model-based and empirical rule-based optical proximity correction. In other embodiments, the optical proximity effect correction unit may also select other suitable optical proximity effect correction methods.

In this embodiment, the optical proximity effect correction unit 505 is configured to divide the edge of the design pattern to obtain a plurality of line segments, and then perform lithography simulation on the design pattern based on the optical proximity correction model to obtain a simulated exposure pattern, Then, it is used to compare the simulated exposure pattern with the target pattern to obtain the edge placement error EPE corresponding to the simulated exposure pattern, and to adjust the position of the line segment based on the edge placement error EPE.

The optical proximity effect correction unit 505 performs cyclic iterations of multiple lithography simulations, calculating edge placement errors, and adjusting line segment positions until the edge placement errors of the simulated exposure pattern corresponding to the design pattern are within a preset threshold range.

The determining unit 506 is configured to perform lithography simulation on the modified pattern, and determine whether the edge placement error corresponding to each concave corner in the corrected pattern meets a preset standard.

In the field of semiconductors, it is more difficult to correct the optical proximity effect at the position of the concave corner. The trimming unit 507 adjusts the graphics near the concave corners where the edge placement error does not meet the preset standard, thereby significantly improving the effect of OPC.

In particular, in this embodiment, in the design graphics, at the concave corners, the corners of adjacent main graphics are opposite to each other and have a single point of intersection. In the semiconductor field, due to the limitations of the reticle manufacturability rules, it is difficult to correct the optical proximity effect of the design pattern with a single point corner, and the edge placement error near the corner near the single point does not meet the predetermined requirements. The probability of setting a standard is high, which is beneficial to perform optical proximity correction for a design pattern with intersecting single points, which is beneficial to significantly improve the effect of optical proximity effect correction and improve the efficiency of optical proximity correction.

In this embodiment, the design pattern is used to form a cutting layer pattern, and the cutting layer pattern is used to cut the layer to be cut along the first direction. Correspondingly, the judging unit 506 is used to judge that the concave corner is along the second direction Whether the edge placement error corresponding to the edge of the parameter satisfies the preset standard, so as to ensure that the line end retraction problem of the to-be-cut layer can be improved after the to-be-cut layer is cut by the cutting layer pattern.

The trimming unit 507 is configured to trim and remove the corner additional graphics corresponding to the concave corner from the corrected graphics when the edge placement error corresponding to the concave corner does not meet a preset standard.

The trimming unit 507 is configured to trim and remove the corner additional graphics corresponding to the concave corners from the modified graphics, so that after trimming and removing the additional graphics, a transparent image with the main graphics is formed in the modified graphics. Graphics with opposite light characteristics. Correspondingly, in this embodiment, for the concave corner vertices whose edge placement error does not meet the preset standard, a graphic opposite to the light transmission characteristic of the main graphic is set, which is beneficial to improve the light intensity distribution near the concave corner. , thereby improving the corner rounding problem at the concave corner, reducing the edge placement error near the concave corner, and improving the matching degree between the mask pattern formed on the wafer and the target pattern.

In this embodiment, the design pattern is used to form a cutting layer pattern, and the cutting layer pattern is used to cut the to-be-cut layer along the first direction, and the to-be-cut layer is a fin. By improving the corner rounding problem at the concave corner and reducing the edge placement error near the concave corner, it is beneficial to improve the line end retraction problem of the fin after the fin cutting process using the cutting mask layer.

In the semiconductor manufacturing process, after the fin cutting process is performed, a gate across the fin is usually formed, and the gate covers part of the top and part of the sidewall of the fin. In this embodiment, the lines of the fin after the fin cutting process are formed. The problem of end retraction has been significantly improved. Correspondingly, in the subsequent process of forming the gate, it is beneficial to ensure that the relative positional relationship between the gate and the fin can meet the design requirements, the gate can span the fin and the The two sides of the gate can also expose at least part of the fin, which is beneficial to prevent device failure at the end of the fin, improve the process yield, and improve the performance of the semiconductor structure.

In this embodiment, the optical proximity correction system 50 further includes: an optical proximity effect correction verification unit 508, configured to perform optical correction on the corrected graphic when the edge placement error corresponding to the concave corner meets a preset standard Proximity effect verification, or, for performing optical proximity effect verification on the corrected graphics output by the trimming unit 507 .

The optical proximity effect verification unit 508 is used to verify the effect of the optical proximity effect correction processing. Specifically, the optical proximity effect verification unit 508 is used to verify the edge placement error corresponding to the corrected graphics.

It can be seen from the foregoing description that after trimming the corrected image, it is beneficial to improve the light intensity distribution at the corner near a single point during exposure, and to improve the corner rounding problem at the corner near a single point, which is conducive to reducing the Small edge placement error between the simulated exposure pattern and the target pattern improves the matching between the mask pattern formed on the wafer and the target pattern.

Correspondingly, the present invention also provides a mask, comprising: a pattern obtained by using the optical proximity correction method provided by the embodiment of the present invention.

It can be seen from the foregoing embodiments that, in the embodiment of the present invention, for the concave corner vertices whose edge placement error does not meet the preset standard, a figure with an opposite light transmission characteristic to that of the main figure is set. During exposure, it is beneficial to improve the light intensity distribution near the concave corner, thereby improving the corner rounding problem at the concave corner, reducing the edge placement error near the concave corner, and improving the mask formed on the wafer. How well the graph matches the target graph.

The embodiment of the present invention also provides a device, which can implement the optical proximity correction method provided by the embodiment of the present invention by using the above-mentioned graphic design method in the form of a loading program. An optional hardware structure of the terminal device provided in this embodiment of the present invention may be as shown in FIG. 17 , including: at least one processor 01 , at least one communication interface 02 , at least one memory 03 , and at least one communication bus 04 .

In this embodiment, the number of the processor 01 , the communication interface 02 , the memory 03 , and the communication bus 04 is at least one, and the processor 01 , the communication interface 02 , and the memory 03 communicate with each other through the communication bus 04 . The communication interface 02 may be an interface of a communication module for network communication, such as an interface of a GSM module. The processor 01 may be a central processing unit (CPU), or a specific integrated circuit (Application Specific Integrated Circuit, ASIC), or one or more integrated circuits configured to implement the embodiments of the present invention. The memory 03 may include high-speed RAM memory, and may also include non-volatile memory (non-volatile memory, NVM), such as at least one disk memory. The memory 03 stores one or more computer instructions, and the one or more computer instructions are executed by the processor 01 to implement the optical proximity correction method provided by the embodiment of the present invention.

It should be noted that the above-mentioned terminal device may also include other devices (not shown) that may not be necessary for the disclosure of the embodiments of the present invention; since these other devices may not be necessary for understanding the disclosure of the embodiments of the present invention, This embodiment of the present invention does not introduce them one by one.

An embodiment of the present invention further provides a storage medium, where the storage medium stores one or more computer instructions, where the one or more computer instructions are used to implement the optical proximity correction method provided by the embodiment of the present invention.

Embodiments of the present invention may be implemented by various means such as hardware, firmware, software, or a combination thereof. In a hardware configuration, the method according to the exemplary embodiment of the present invention may be implemented by one or more application specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices ( PLD), field programmable gate array (FPGA), processors, controllers, microcontrollers, microprocessors, etc. In a firmware or software configuration, the embodiments of the present invention may be implemented in the form of modules, procedures, functions, and the like. Software codes may be stored in a memory unit and executed by a processor. The memory unit is located inside or outside the processor and can transmit and receive data to and from the processor via various known means.

Although the present invention is disclosed above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be based on the scope defined by the claims.

Claims (17)

1. an optical proximity correction method, is characterized in that, comprises: providing design graphics, including a plurality of main graphics, and at least some adjacent main graphics are formed with concave corners; generating corner additional graphics in the main graphics corresponding to the vertices of the concave corners based on design rules and mask writing rules; Based on the target graphic, perform optical proximity effect correction on the design graphic to obtain a corrected graphic; Perform a lithography simulation on the corrected pattern, and determine whether the edge placement error corresponding to each concave corner in the corrected pattern satisfies a preset standard; When the edge placement error corresponding to the concave corner does not meet the preset standard, trimming processing is performed on the corrected graphic, for trimming and removing the corner additional graphic corresponding to the concave corner from the corrected graphic. 2. optical proximity correction method as claimed in claim 1 is characterized in that, described optical proximity correction method also comprises: after providing the design figure, in the main figure corresponding to the vertex of the concave corner, generate the corner additional figure and Before the optical proximity effect correction is performed on the design pattern, etching deviation compensation is performed on the design pattern, and the design pattern after the etching deviation compensation is performed is used as the target pattern. 3. The optical proximity correction method according to claim 1, wherein the optical proximity correction method further comprises: when the corresponding edge placement error at the concave corner meets a preset standard, performing a step on the corrected graph. Optical proximity effect verification; or, when the edge placement error corresponding to the concave corner does not meet the preset standard, after trimming the modified graphic, perform optical proximity on the trimmed modified graphic Effect verification. 4. The optical proximity correction method according to claim 2, wherein the optical proximity correction method further comprises: after performing etching deviation compensation processing on the design pattern, before performing the optical proximity effect correction processing , providing auxiliary graphics around the main graphics. 5 . The optical proximity correction method according to claim 1 , wherein the additional figure at the corner is a rectangular figure. 6 . 6 . The optical proximity correction method according to claim 1 , wherein the design pattern is used to form a cutting layer pattern, and the cutting layer pattern is used to cut the layer to be cut along the first direction, and the layer to be cut is used to cut the layer to be cut. 7 . It extends along a first direction and is spaced apart along a second direction, and the first direction is perpendicular to the second direction. 7. The optical proximity correction method according to claim 6, wherein the main figure is a rectangular figure, and the main figure comprises a first side and a second side that intersect and the point of intersection is the vertex of the concave corner, and the the first edge is along the first direction, and the second edge is along the second direction; In the step of generating the corner additional graphics, along the first direction, the distance from the geometric center of the corner additional graphics to the second side is a first distance, and the first distance is greater than or equal to the mask Minimum line width for writing rules; along the second direction, the distance from the geometric center of the corner additional graphic to the first side is a second distance, and the second distance is greater than or equal to the distance from the first side to the adjacent layer to be cut, and less than or equal to the sum of the distance from the first edge to the adjacent layer to be cut along the second direction and the pitch of the layer to be cut. 8. optical proximity correction method as claimed in claim 7, is characterized in that, described main figure also comprises the third side parallel with described second side; In the step of generating described corner additional figure, along described In the first direction, the distance from the geometric center to the third edge is greater than or equal to the minimum line width of the mask writing rule. 9 . The optical proximity correction method of claim 6 , wherein the layer to be cut is a fin, a gate or a metal line. 10 . 10. optical proximity correction method as claimed in claim 1 is characterized in that, in the step of generating described corner additional graphics, the line width of described corner additional graphics is greater than or equal to the minimum line width of mask writing rule, And less than or equal to the resolution of the lithography process. 11. An optical proximity correction system, characterized in that, comprising: a providing unit for providing design graphics, including a plurality of main graphics, and concave corners are formed between at least some adjacent main graphics; a corner additional graphics generation unit for generating corner additional graphics in the main graphics corresponding to the vertices of the concave corners based on design rules and mask writing rules; an optical proximity effect correction unit, configured to perform optical proximity effect correction on the design graphic based on the target graphic to obtain a corrected graphic; a judging unit, configured to perform lithography simulation on the revised figure, and judge whether the edge placement error corresponding to each concave corner in the revised figure satisfies a preset standard; A trimming unit, configured to trim and remove corner additional graphics corresponding to the concave corner from the corrected graphics when the edge placement error corresponding to the concave corner does not meet a preset standard. 12. The optical proximity correction system according to claim 11 , wherein the optical proximity correction system further comprises: an etching deviation compensation unit, which is used to perform etching deviation compensation on the design pattern, and is also used to The design pattern after etching deviation compensation is output to the optical proximity effect correction unit as a target pattern. 13. The optical proximity correction system according to claim 11 or 12, wherein the optical proximity correction system further comprises: an optical proximity effect correction verification unit for placing errors at the edges corresponding to the concave corners When the preset standard is met, the optical proximity effect verification is performed on the corrected graphic, or used for performing optical proximity effect verification on the corrected graphic output by the trimming unit. 14. optical proximity correction system as claimed in claim 12, is characterized in that, described optical proximity correction system also comprises: auxiliary figure adding unit, is used for the main figure of the design figure outputted by described etching deviation compensation unit Auxiliary graphics are provided, and are further used for outputting the auxiliary graphics and the main graphics to the optical proximity effect correction unit. 15. A mask, comprising: a pattern obtained by the optical proximity correction method according to any one of claims 1-10. 16. An apparatus comprising at least one memory and at least one processor, the memory storing one or more computer instructions, wherein the one or more computer instructions are executed by the processor to implement The optical proximity correction method according to any one of claims 1-10. 17. A storage medium, wherein the storage medium stores one or more computer instructions, and the one or more computer instructions are used to implement the optical proximity correction according to any one of claims 1-10 method.

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