CN115047707A

CN115047707A - Optical proximity correction method and system, mask, equipment and storage medium

Info

Publication number: CN115047707A
Application number: CN202110254872.0A
Authority: CN
Inventors: 王良; 张迎春
Original assignee: Semiconductor Manufacturing International Shanghai Corp; Semiconductor Manufacturing International Beijing Corp
Current assignee: Semiconductor Manufacturing International Shanghai Corp; Semiconductor Manufacturing International Beijing Corp
Priority date: 2021-03-09
Filing date: 2021-03-09
Publication date: 2022-09-13

Abstract

An optical proximity correction method and system, a mask, a device and a storage medium are provided, the optical proximity correction method comprises the following steps: providing a design pattern comprising a plurality of main patterns, wherein concave corners are formed between at least part of adjacent main patterns; generating a corner additional graph in the main graph corresponding to the vertex of the concave corner based on a design rule and a mask writing rule; based on the target graph, carrying out optical proximity effect correction on the design graph to obtain a corrected graph; photoetching simulation is carried out on the corrected graph, and whether edge placement errors corresponding to the concave corners in the corrected graph meet preset standards or not is judged; and when the edge placement error corresponding to the concave corner does not meet the preset standard, trimming the corrected graph to trim and remove the corner additional graph corresponding to the concave corner from the corrected graph. The embodiment of the invention is beneficial to reducing the edge placement error at the concave corner.

Description

Optical proximity correction method and system, mask, equipment and storage medium

Technical Field

The embodiment of the invention relates to the field of semiconductor manufacturing, in particular to an optical proximity correction method and system, a mask, equipment and a storage medium.

Background

In order to transfer the pattern from the reticle to the surface of the silicon wafer, an exposure step, a development step performed after the exposure step, and an etching step performed after the development step are generally required. In the exposure step, light irradiates on a silicon wafer coated with photoresist through a light-transmitting area in a mask plate, and the photoresist undergoes a chemical reaction under the irradiation of the light; in the developing step, photoetching patterns are formed by utilizing the different dissolution degrees of photosensitive and non-photosensitive photoresist to a developer, so that the patterns are transferred from a mask to the photoresist; in the etching step, the silicon wafer is etched based on the photoetching pattern formed by the photoetching adhesive layer, and the pattern of the mask is further transferred to the silicon wafer.

However, as the size of the device is gradually reduced, the difference between the pattern on the chip surface and the original mask pattern is increased after the photolithography process, and especially corner rounding (corner rounding) and line end shortening (line end shortening) caused by Optical Proximity Effect (OPE) are typically observed.

In order to avoid the inconsistency between the pattern on the chip and the mask pattern caused by the optical proximity effect, the conventional solution usually performs Optical Proximity Correction (OPC) on the mask pattern, and then performs pattern transfer according to the corrected mask pattern. In the OPC correction procedure, Mask Manufacturing Rule Check (Mask Manufacturing Rule Check) is usually performed to ensure the final pattern convergence and the Mask Manufacturing accuracy.

However, the effect of optical proximity correction still needs to be improved.

Disclosure of Invention

The embodiment of the invention provides an optical proximity correction method and system, a mask, equipment and a storage medium, and aims to reduce edge placement errors at concave corners.

To solve the above problem, an embodiment of the present invention provides an optical proximity correction method, including: providing a design pattern comprising a plurality of main patterns, wherein concave corners are formed between at least part of adjacent main patterns; generating a corner additional graph in the main graph corresponding to the vertex of the concave corner based on a design rule and a mask writing rule; based on the target graph, carrying out optical proximity effect correction on the design graph to obtain a corrected graph; photoetching simulation is carried out on the corrected graph, and whether edge placement errors corresponding to the concave corners in the corrected graph meet preset standards or not is judged; and when the edge placement error corresponding to the concave corner does not meet the preset standard, trimming the corrected graph to trim and remove the corner additional graph corresponding to the concave corner from the corrected graph.

Accordingly, an embodiment of the present invention further provides an optical proximity correction system, including: a providing unit for providing a design pattern including a plurality of main patterns, at least some of which have concave corners formed therebetween; a corner additional figure generating unit for generating a corner additional figure in the main figure corresponding to the vertex of the concave corner based on a design rule and a mask writing rule; the optical proximity effect correction unit is used for carrying out optical proximity effect correction on the design graph based on the target graph to obtain a corrected graph; the judging unit is used for carrying out photoetching simulation on the corrected graph and judging whether edge placement errors corresponding to the concave corners in the corrected graph meet preset standards or not; a trimming unit for trimming and removing the corner additional figure corresponding to the concave corner from the corrected figure when the edge placement error corresponding to the concave corner does not satisfy a preset standard.

Correspondingly, the embodiment of the invention also provides a mask plate which comprises a graph obtained by using the optical proximity correction method provided by the embodiment of the invention.

Accordingly, an apparatus is also provided in an embodiment of the present invention, which includes at least one memory and at least one processor, where the memory stores one or more computer instructions, and the one or more computer instructions are executed by the processor to implement the optical proximity correction method provided in an embodiment of the present invention.

Accordingly, the embodiment of the present invention further provides a storage medium, where the storage medium stores one or more computer instructions for implementing the optical proximity correction method provided by the embodiment of the present invention.

Compared with the prior art, the technical scheme of the embodiment of the invention has the following advantages:

according to the optical proximity correction method provided by the embodiment of the invention, based on a design rule and a mask writing rule, a corner additional graph is generated in a main graph corresponding to the vertex of a concave corner; after obtaining the corrected graph, carrying out photoetching simulation on the corrected graph, judging whether edge placement errors corresponding to concave corners in the corrected graph meet preset standards, and when the edge placement errors do not meet the preset standards, carrying out trimming processing on the corrected graph, so as to trim and remove the corner additional graph corresponding to the concave corners from the corrected graph, thereby forming a graph with the light transmission characteristic opposite to that of the main graph in the corrected graph after trimming and removing the additional graph, correspondingly, aiming at the concave corner vertexes with the edge placement errors not meeting the preset standards, the embodiment of the invention sets the graph with the light transmission characteristic opposite to that of the main graph, is beneficial to improving the light intensity distribution close to the concave corners, further improving the corner rounding problem at the concave corners and reducing the Edge Placement Errors (EPE) close to the concave corners, the matching degree of the mask pattern formed on the wafer and the target pattern is improved.

Drawings

FIG. 1 is a flow chart of a method of optical proximity correction;

FIG. 2 is a schematic diagram corresponding to step s1 in FIG. 1;

FIG. 3 is a schematic diagram corresponding to step s2 in FIG. 1;

FIG. 4 is a schematic diagram corresponding to step s3 in FIG. 1;

FIG. 5 is a schematic diagram corresponding to step s4 in FIG. 1;

FIG. 6 is an enlarged partial view of FIG. 5 at the location of the dashed box;

FIG. 7 is a flowchart of an embodiment of a method for optical proximity correction of the present invention;

FIG. 8 is a schematic diagram corresponding to step S1 in FIG. 7;

fig. 9 is a schematic diagram corresponding to step S2 in fig. 7;

FIG. 10 is a schematic diagram corresponding to step S3 in FIG. 7;

FIG. 11 is a schematic diagram corresponding to step S5 in FIG. 7;

fig. 12 is a schematic view corresponding to step S7 in fig. 7;

fig. 13 is a schematic view corresponding to step S8 in fig. 7;

FIG. 14 is an enlarged view of a portion of FIG. 13 at position A;

FIG. 15 is an enlarged partial view at position B in FIG. 13;

FIG. 16 is a functional block diagram of one embodiment of an optical proximity correction system of the present invention;

fig. 17 is a hardware configuration diagram of an embodiment of the apparatus provided by the present invention.

Detailed Description

As is known in the art, the effect of optical proximity correction is currently to be improved. The reason why the effect of optical proximity correction is to be improved is analyzed in conjunction with an optical proximity correction method. FIG. 1 is a flow chart of a method of optical proximity correction. With combined reference to fig. 2 to 6, schematic diagrams corresponding to steps in the optical proximity correction method are shown, the optical proximity correction method including:

referring to fig. 2, step s 1: a design 10 is provided, the design 10 including a plurality of rectangular patterns 20, corners of adjacent rectangular patterns 20 being opposite and having a single point of intersection (as indicated by the dashed circle in fig. 2). The design pattern 10 is used to form a cutting layer pattern, the cutting layer pattern is used to cut off the fin portion 30 along an extending direction of the fin portion 30, the fin portion 30 extends along a transverse direction (as shown in an x direction in fig. 2) and is arranged at intervals along a longitudinal direction (as shown in a y direction in fig. 2), and the transverse direction is perpendicular to the longitudinal direction.

Referring to fig. 3, step s 2: and (3) carrying out etching deviation (Etch Bias) compensation processing on the design pattern 10 to obtain an etching compensation pattern 40.

Referring to fig. 4, step s 3: and taking the etching compensation pattern 40 as a Target pattern (Target), and carrying out Optical Proximity Correction (OPC) on the etching compensation pattern 40 to obtain a corrected pattern 45.

Referring to fig. 5, step s 4: the corrected pattern 45 is subjected to optical proximity effect verification to obtain a simulated exposure pattern 60, and an Edge Placement Error (EPE) between the simulated exposure pattern 60 and the target pattern is calculated.

In the semiconductor field, during the optical proximity correction process, at the Inner corners (Inner Corner) of the pattern, partial edges of the Inner corners are usually pushed inward to improve the distribution of light intensity near the positions of the Inner corners during exposure, thereby improving the problem of Corner Rounding (Inner Rounding).

However, as shown in fig. 2, since the corners of the adjacent rectangular patterns 20 are opposite to each other and have only intersecting single points (as shown in the dashed circles in fig. 2), even if the etching compensation deviation processing expands the edges of the design pattern 10 in the lateral direction (as shown in the x direction in fig. 3) by a certain distance, as shown in fig. 3, the lateral overlapping width RL between the edges of the adjacent two rectangular patterns 20 is still small at the position close to the intersecting single points, as shown in fig. 4, during the optical proximity effect correction processing performed on the etching compensation pattern 40, the edge of the pattern is pushed inward at the position close to the single point, and the intersecting single points (as shown in the dashed circles in fig. 4) are easily formed at the opposite corners between the adjacent patterns, and the optical proximity effect correction is not good.

Accordingly, as shown in fig. 5, in the simulated exposure pattern 60, the problem of corner rounding is severe near the single point position of intersection between adjacent patterns, resulting in a large edge placement error EPE of the simulated exposure pattern 60 (as shown in fig. 6). The simulated exposure pattern 60 is used for cutting off the fin portion 30 in the extending direction of the fin portion 30, the edge placement error EPE of the simulated exposure pattern 60 is large, accordingly, after the fin cutting process is performed, the line end retracting problem of the fin portion 30 is serious, and the edge placement error EPE is also enlarged after the etching process is performed, so that the line end retracting problem of the fin portion 30 is further aggravated.

In a semiconductor process, after a fin cutting process is performed, a gate structure crossing the fin 30 and covering a portion of the top and a portion of the sidewall of the fin 30 is also usually formed, and a line end retraction problem of the fin 30 is serious, and accordingly, in the process of forming the gate structure, at a line end position close to the fin 30, it is easy to cause that the gate structure is difficult to cover a portion of the top and the sidewall of the fin 30, and further cause device failure at the line end position close to the fin 30.

To solve the above technical problem, an embodiment of the present invention provides an optical proximity correction method. Referring to FIG. 7, a flow chart of an embodiment of the optical proximity correction method of the present invention is shown.

As an example, the optical proximity correction method according to the present embodiment includes the following basic steps:

step S1: providing a design pattern comprising a plurality of main patterns, wherein concave corners are formed between at least part of adjacent main patterns;

step S3: generating a corner additional graph in the main graph corresponding to the vertex of the concave corner based on a design rule and a mask writing rule;

step S5: based on the target graph, carrying out optical proximity effect correction on the design graph to obtain a corrected graph;

step S6: photoetching simulation is carried out on the corrected graph, and whether edge placement errors corresponding to the concave corners in the corrected graph meet preset standards or not is judged;

step S7: and when the edge placement error corresponding to the concave corner does not meet the preset standard, trimming the corrected graph to trim and remove the corner additional graph corresponding to the concave corner from the corrected graph.

The optical proximity correction method further includes step S2: after providing a design pattern, generating a corner additional pattern in a main pattern corresponding to a vertex of a concave corner, and before performing optical proximity effect correction on the design pattern, performing etching deviation compensation on the design pattern, wherein the design pattern after performing etching deviation compensation is used as the target pattern.

The optical proximity correction method further includes step S4: after the etching deviation compensation processing is carried out on the design pattern and before the optical proximity effect correction processing is carried out, auxiliary patterns are provided around the main pattern.

The optical proximity correction method further comprises: step S8: when the edge placement error corresponding to the concave corner meets a preset standard, carrying out optical proximity effect verification on the corrected graph; or when the edge placement error corresponding to the concave corner does not meet a preset standard, performing optical proximity effect verification on the corrected graph after trimming processing on the corrected graph.

In the optical proximity correction method provided by the embodiment of the invention, based on a design rule and a mask writing rule, a corner additional graph is generated in a main graph corresponding to the vertex of a concave corner; after obtaining the corrected graph, carrying out photoetching simulation on the corrected graph, judging whether edge placement errors corresponding to concave corners in the corrected graph meet preset standards, and when the edge placement errors do not meet the preset standards, carrying out trimming processing on the corrected graph, so as to trim and remove corner additional graphs corresponding to the concave corners from the corrected graph, thereby forming graphs opposite to the light transmission characteristic of the main graph in the corrected graph after trimming and removing the corner additional graphs corresponding to the concave corners, correspondingly, aiming at concave corner vertexes with the edge placement errors not meeting the preset standards, setting graphs opposite to the light transmission characteristic of the main graph, and being beneficial to improving the light intensity distribution close to the concave corners, further improving the corner rounding problem at the concave corners and reducing the edge placement errors close to the concave corners, the matching degree of the mask pattern formed on the wafer and the target pattern is improved.

In order to make the aforementioned objects, features and advantages of the embodiments of the present invention comprehensible, specific embodiments accompanied with figures are described in detail below.

Referring to fig. 8, step S1 is performed: a design pattern 100 is provided, which includes a plurality of main patterns 110, and Concave corners (Concave corner) are formed between at least some adjacent main patterns 110.

After the optical proximity correction is performed on the design pattern 100, the obtained pattern is used for manufacturing a mask, so that a photolithography process is performed using the mask to form a corresponding mask pattern on a wafer.

In the design pattern 100, concave corners are formed between at least some of the main patterns 110 adjacent to each other, and in the semiconductor field, the difficulty of correcting the optical proximity effect at the corners is large, and this embodiment performs optical proximity correction on the design pattern 100 having concave corners, thereby being beneficial to significantly improving the optical proximity correction effect.

In this embodiment, in the design pattern 100, corners of adjacent main patterns 110 are opposite to each other at the concave corner, and have a Single Point (Single Point) of intersection. In the semiconductor field, the difficulty of correcting the optical proximity effect of the design pattern with single-point corners is large due to Mask manufacturing Constraints (MRC), and therefore, in this embodiment, the optical proximity correction is performed on the design pattern 100 with intersecting single points, which is beneficial to significantly improve the effect of correcting the optical proximity effect.

In this embodiment, the design pattern 100 is used to form a cutting layer pattern, the cutting layer pattern is used to cut off a layer to be cut along a first direction, the layer to be cut extends along the first direction (as shown in an X direction in fig. 8) and is arranged at intervals along a second direction (as shown in a Y direction in fig. 8), and the first direction is perpendicular to the second direction.

The layer to be cut is a target layer to be cut, and the layer to be cut comprises a fin portion 120, a grid or a metal interconnection line. Wherein the fin 120 is used to form a fin field effect transistor; the gate may be a dummy gate or a device gate.

In this embodiment, the layer to be cut is taken as the fin portion 120 as an example for explanation. Accordingly, the design pattern 100 is used to form a mask for a Fin Cut (Fin Cut) process.

In this embodiment, the main pattern 110 is a rectangular pattern. The design pattern 100 includes a plurality of rectangular patterns 110, so that it is friendly to a reticle manufacturing process and optical proximity correction, and the result is controllable.

In this embodiment, the main pattern 110 is a rectangular pattern, the main pattern 110 includes a first side 111 and a second side 112 intersecting each other and having a concave corner vertex at an intersection point, the first side is along the first direction, the second side is along the second direction, and the main pattern 110 further includes a third side 113 parallel to the second side 112.

Referring to fig. 9 in combination, step S2: and carrying out etching deviation compensation on the design graph 100, wherein the design graph 100 after the etching deviation compensation is used as a Target graph (Target). And compensating the etching deviation of the design graph 100, and compensating the critical dimension of the design graph 100 based on the etching offset.

After the photoetching process and the etching process are carried out, the critical dimension of the graph formed on the wafer has deviation from the critical dimension of the design graph 100, the deviation possibly generated by the photoetching process and the etching process is compensated into the design graph 100 in advance by carrying out etching deviation compensation processing on the design graph 100, and then the matching degree between the graph formed on the wafer and the design graph 100 after the photoetching process and the etching process are carried out is improved

In this embodiment, the step of performing etching deviation compensation processing on the design pattern 100 includes: the edge of the design pattern 100 is moved outward by a predetermined distance along a direction perpendicular to the edge of the design pattern 100, so that a line width is added to the edge of the design pattern 100 to compensate for the etching offset.

In this embodiment, the etching offset may be obtained from experimental data.

Referring to fig. 10, step S3: based on a Design Rule (Design Rule) and a Mask Writing Rule (Mask Writing Rule), a corner attachment (slcl) 130 is generated in the main pattern 110 corresponding to the vertex of the concave corner.

In the semiconductor field, the difficulty of correcting the optical proximity effect at the concave corner is high, and the corner additional graph 130 is generated in the main graph 110 corresponding to the vertex of the concave corner first, so that the optical proximity effect correction is performed on the subsequent design graph, after the corrected graph is obtained, when the edge placement error corresponding to the concave corner of the corrected graph does not meet the preset standard, the corrected graph can be trimmed, so that the corresponding corner additional graph 130 is trimmed and removed from the corrected graph, the light intensity distribution near the concave corner where the edge placement error does not meet the preset standard is correspondingly improved, the corner rounding problem at the concave corner is further improved, and the edge placement error is reduced.

In this embodiment, the corner additional pattern 130 is a rectangular pattern. The rectangular pattern is beneficial to improving the friendliness of mask manufacturing.

In this embodiment, in the step of generating the corner additional pattern 130, the line width of the corner additional pattern 130 is greater than or equal to the minimum line width of the mask writing rule, and is less than or equal to the resolution of the photolithography process.

The line width of the corner additional pattern 130 is greater than or equal to the minimum line width of the mask writing rule, so that after trimming processing is performed on the corrected pattern, and the corresponding corner additional pattern 130 is trimmed and removed from the corrected pattern, the remaining corrected pattern is highly friendly to the mask writing, the pattern corresponding to the corner additional pattern 130 can be manufactured in the mask, and the effect of improving the light intensity distribution during exposure can be achieved.

In addition, the line width of the corner additional pattern 130 is smaller than the resolution of the photolithography process, so that the corner additional pattern 130 is prevented from being formed on the wafer during photolithography, and thus, the pattern formed on the wafer is prevented from being adversely affected.

In this embodiment, in the step of generating the corner additional pattern 130, along the first direction, a distance from a geometric center of the corner additional pattern 130 to the second edge is a first distance Lx, and the first distance is greater than or equal to a minimum line width min _ MRC _ CD of a mask writing rule.

In the process of writing in the mask, the smaller the line width is, the larger the difference and error of writing in the mask are, so that the friendliness of writing in the mask is improved and the probability of generating errors in writing in the mask is reduced by making the first distance greater than or equal to min _ MRC _ CD.

Likewise, in the step of generating the corner additional pattern 130, along the first direction, a distance from a geometric center of the corner additional pattern 130 to the third side 113 is greater than or equal to the minimum line width min _ MRC _ CD of the reticle writing rule, so as to improve the friendliness of reticle writing.

In this embodiment, along the second direction, a distance from a geometric center of the corner additional pattern 130 to the first edge 111 is a second distance Ly, and the second distance Ly is greater than or equal to a distance from the first edge 111 to an adjacent layer to be cut.

In the process of designing the integrated circuit, in the design rule, for the pattern with the concave corner, the distance between the concave corner and the adjacent layer to be cut has the minimum limit L0, so that the requirement of the design rule can be met by making the second distance Ly greater than or equal to the distance from the first edge 111 to the adjacent layer to be cut.

And the second distance Ly is less than or equal to the sum of the distance L0 from the first edge 111 to the adjacent layer to be cut in the second direction and the Pitch (Pitch) P of the layer to be cut.

In this embodiment, when the problem of corner rounding is caused during exposure, the layer to be cut adjacent to the concave corner is more significantly affected by the problem of corner rounding than the layer to be cut not adjacent to the concave corner, the edge placement error of the exposed pattern at the position of the layer to be cut adjacent to the concave corner is larger, and when the layer to be cut is cut by using the exposed pattern, the problem of line end retraction at the layer to be cut adjacent to the concave corner is more serious, and therefore, the second distance Ly is less than or equal to the sum of L0 and P, thereby significantly improving the problem of line end retraction at the position of the layer to be cut adjacent to the concave corner.

Step S4: after the etching deviation compensation process is performed on the design pattern 100, an auxiliary pattern (not shown) is provided around the main pattern 110.

In this embodiment, the main pattern 110 is an exposable pattern, the auxiliary pattern is an unexposed pattern, and scattering bars are arranged around the main pattern 110, which is beneficial to improving light intensity contrast, reducing Edge Placement Error (EPE), and is also beneficial to improving focal depth, thereby improving a photolithography process window. Specifically, the auxiliary pattern is a Scattering Bar (SB).

Referring to fig. 11, step S5: based on the target pattern, the optical proximity effect correction is performed on the design pattern 100 to obtain a corrected pattern 200. The optical proximity correction process is used to adjust the profile of the design pattern 100 to alleviate the pattern distortion problem caused by optical proximity effect. The corrected pattern 200 is used for manufacturing a mask.

Specifically, the design pattern 100 subjected to the etching deviation compensation processing is taken as the target pattern, and the optical proximity effect correction is performed on the design pattern 100 subjected to the etching deviation compensation processing.

In this embodiment, the Target pattern (Target) refers to: and carrying out the exposed target pattern to be used as a reference standard of the edge placement error of the exposed pattern obtained by photoetching simulation.

In this embodiment, the optical proximity correction process is performed by using Model-based optical proximity correction (Model-based OPC) as an example. In other embodiments, the optical proximity correction process may also be performed using Rule-based optical proximity correction (Rule-based OPC), or based on a mixture of models and Rule-based optical proximity correction. In other embodiments, other suitable optical proximity correction methods may be used.

In this embodiment, the performing the optical proximity correction process includes: performing segmentation (segmentation) processing on the edges of the design graph 100 to obtain a plurality of segments (segments); performing a lithography simulation step for performing a lithography simulation on the design pattern 100 based on the optical proximity correction model to obtain a simulated exposure pattern; executing a calculation step, namely comparing the simulated exposure graph with the target graph to obtain an Edge Placement Error (EPE) corresponding to the simulated exposure graph; executing an adjusting step for adjusting the position of the line segment based on the edge placement error EPE; the lithography simulation step, the calculation step and the adjustment step which are executed once form a correction loop, and iterative processing of the correction loop is performed for a plurality of times until the edge placement error of the simulated exposure pattern corresponding to the design pattern 100 is within a preset threshold range.

And performing iterative processing of a plurality of correction loops until the edge placement error corresponding to the design graph 100 is converged to meet the requirement of a preset threshold range.

Step S6: and carrying out photoetching simulation on the corrected graph 200, and judging whether edge placement errors EPE corresponding to the concave corners in the corrected graph 200 meet preset standards.

In the semiconductor field, the difficulty of optical proximity effect correction at the concave corner is high, and after the optical proximity effect correction processing, whether the edge placement error EPE corresponding to each concave corner in the corrected graph 200 meets the preset standard is judged, so that the graph near the concave corner where the edge placement error does not meet the preset standard is adjusted subsequently, and the optical proximity correction effect is improved remarkably.

Particularly, in the present embodiment, in the design pattern 100, corners of adjacent main patterns 110 are opposite to each other at the concave corner, and have a Single Point (Single Point) of intersection. In the semiconductor field, due to Mask manufacturing Constraints (MRC), the difficulty of correcting the optical proximity effect of the design pattern with a single point corner is large, and the probability that the edge placement error near the corner near the single point does not meet the preset standard is large, so that the optical proximity correction is favorably performed on the design pattern 100 with the intersected single point, the effect of correcting the optical proximity effect is favorably and remarkably improved, and the efficiency of the optical proximity correction is improved.

In this embodiment, the design pattern 100 is used to form a cutting layer pattern, the cutting layer pattern is used to cut off the layer to be cut along the first direction, and accordingly, it is determined whether an edge placement error corresponding to an edge of the concave corner along the second direction meets a preset standard, so as to ensure that after the layer to be cut is cut off by using the cutting layer pattern, the line end retraction problem of the layer to be cut can be improved.

Referring to fig. 12, step S7: when the edge placement error corresponding to the concave corner does not satisfy the preset standard, performing a trimming process on the modified graph 200 for trimming the corner additional graph 130 corresponding to the concave corner from the modified graph 200.

In this embodiment, it is determined whether the edge placement error corresponding to each of the concave corners in the corrected graph 200 meets a predetermined criterion, and when the edge placement error does not meet the predetermined criterion, the modified graphic 200 is subjected to a trimming process for trimming the corner additional graphic 130 corresponding to the concave corner from the modified graphic 200, so that after the trimming of the additional graphic 130, a pattern with a light transmission characteristic opposite to that of the main pattern 110 is formed in the modified pattern 200, and accordingly, in the present embodiment, for the vertex of the concave corner where the edge placement error does not meet the preset standard, a pattern with a light transmission characteristic opposite to that of the main pattern 110 is provided, which is beneficial to improving the light intensity distribution near the concave corner, thereby improving the corner rounding problem at the concave corner, reducing the edge placement error close to the concave corner, and improving the matching degree of the mask pattern formed on the wafer and the target pattern.

In this embodiment, the design pattern 100 is used to form a cutting layer pattern, the cutting layer pattern is used to cut off a layer to be cut along a first direction, and the layer to be cut is the fin portion 120. By improving the corner rounding problem at the concave corner and reducing the edge placement error near the concave corner, the line end retraction problem of the fin portion 120 after the fin cutting process is performed by using the cutting mask layer is facilitated to be improved.

In a semiconductor manufacturing process, after a fin cutting process is performed, a gate crossing the fin portion 120 is usually formed, and the gate covers part of the top and part of the side wall of the fin portion 120, in this embodiment, the problem of line end retraction of the fin portion 120 after the fin cutting process is performed is significantly improved, and accordingly, in a subsequent gate forming process, it is beneficial to ensure that a relative position relationship between the gate and the fin portion 120 can meet design requirements, the gate can cross the fin portion 120, and at least part of the fin portion 120 can be exposed at two sides of the gate, so that device failure at the tail end of the fin portion 120 is prevented, the manufacturing yield is improved, and the performance of a semiconductor structure is improved.

Step S8: when the edge placement error corresponding to the concave corner meets a preset standard, carrying out optical proximity effect Verification (OPC Verification) on the corrected graph; or, when the edge placement error corresponding to the concave corner does not satisfy a preset standard, after the trimming process is performed on the corrected graph 200, the optical proximity effect verification is performed on the corrected graph 200 after the trimming process is performed.

Optical proximity effect verification is used to verify the effect of the optical proximity effect correction process. Specifically, optical proximity verification is used to verify the edge placement error corresponding to the corrected pattern 200.

As shown in fig. 13, it can be seen from the above description that after trimming the corrected pattern 200, it is beneficial to improve the light intensity distribution at the corner near the single point during exposure, improve the corner rounding problem at the corner near the single point, further beneficial to reduce the Edge Placement Error (EPE) between the simulated exposure pattern 220 and the target pattern 210, and improve the matching degree between the mask pattern formed on the wafer and the target pattern 210.

Specifically, as shown in fig. 14 and 15, which show partial enlarged views of fig. 13 at positions a and B, respectively, the outline of the simulated exposure pattern 220 in the present embodiment is indicated by a solid line, and the outline of the simulated exposure pattern in the related art is indicated by a dotted line. As can be seen from the figure, compared with the prior art, the simulated exposure pattern 220 of the present embodiment has a smaller edge placement error EPE near the corner, which is beneficial to improving the line end retraction problem of the layer to be cut.

In addition, in this embodiment, before the corner additional pattern 130 is provided, the etching deviation compensation process is further performed on the design pattern 100, so that after the optical proximity effect correction process is performed, a mask pattern is formed subsequently by using the corrected pattern 200, the matching degree between the formed mask pattern and the target pattern 210 is high, and accordingly, after the etching process is performed by using the mask pattern, the matching degree between the pattern formed on the wafer and the design pattern 100 is high.

Correspondingly, the invention also provides an optical proximity correction system. FIG. 16 is a functional block diagram of an embodiment of an optical proximity correction system of the present invention.

In this embodiment, the optical proximity correction system 50 includes: a providing unit 501, configured to provide a design pattern, including a plurality of main patterns, where concave corners are formed between at least some of the adjacent main patterns; a corner additional pattern generating unit 503 for generating a corner additional pattern in the main pattern corresponding to the vertex of the concave corner based on the design rule and the mask writing rule; an optical proximity effect correction unit 505, configured to perform optical proximity effect correction on the design pattern based on the target pattern, so as to obtain a corrected pattern; a determining unit 506, configured to perform lithography simulation on the corrected graph, and determine whether edge placement errors corresponding to the concave corners in the corrected graph meet a preset standard; a trimming unit 507 for trimming and removing the corner additional figure corresponding to the concave corner from the corrected figure when the edge placement error corresponding to the concave corner does not satisfy a preset standard.

A corner additional pattern generating unit 503 for generating a corner additional pattern in the main pattern corresponding to the vertex of the concave corner based on a design rule and a mask writing rule; a determining unit 506, configured to perform lithography simulation on the corrected graph, and determine whether edge placement errors corresponding to the concave corners in the corrected graph meet a preset standard; a trimming unit 507, configured to trim and remove the additional pattern corresponding to the concave corner from the corrected pattern when the edge placement error corresponding to the concave corner does not meet a preset standard, so as to form a pattern opposite to the light transmission characteristic of the main pattern in the corrected pattern, and accordingly, for a vertex of the concave corner where the edge placement error does not meet the preset standard, set a pattern opposite to the light transmission characteristic of the main pattern, which is beneficial to improving the light intensity distribution near the concave corner, thereby improving the corner rounding problem at the concave corner, reducing the edge placement error near the concave corner, and improving the matching degree between the mask pattern formed on the wafer and the target pattern.

The design pattern provided by the providing unit 501 is used for obtaining a pattern for manufacturing a mask after optical proximity correction, so that a photolithography process is performed by using the mask to form a corresponding mask pattern on a wafer.

In the design pattern, concave corners are formed between at least part of the adjacent main patterns, and in the semiconductor field, the difficulty of correcting the optical proximity effect at the corners is higher.

In this embodiment, in the design pattern, corners of adjacent main patterns are opposite to each other at the concave corner, and have intersecting single points. In the semiconductor field, because the difficulty of correcting the optical proximity effect of the design pattern with single-point corners is high due to mask manufacturability rule restriction (MRC), in this embodiment, the optical proximity correction is performed on the design pattern with intersecting single points, which is beneficial to significantly improving the effect of correcting the optical proximity effect.

In this embodiment, the design pattern is used to form a cutting layer pattern, the cutting layer pattern is used to cut off the layer to be cut along a first direction, the layer to be cut extends along the first direction and is arranged at intervals along a second direction, and the first direction is perpendicular to the second direction.

The layer to be cut is a target layer to be cut, and comprises a fin part, a grid or a metal interconnection line. The fin part is used for forming a fin field effect transistor; the gate may be a dummy gate or a device gate.

In this embodiment, the layer to be cut is taken as a fin portion as an example for explanation. Accordingly, the design pattern is used to form a mask for the fin-cutting process.

In this embodiment, the main pattern is a rectangular pattern. The design pattern comprises a plurality of rectangular patterns, so that the design pattern is friendly to mask manufacturing process and optical proximity effect correction, and the result is controllable.

In this embodiment, the main pattern is a rectangular pattern, the main pattern includes a first edge and a second edge that intersect and intersect as the concave corner vertex, the first edge is in the first direction, the second edge is in the second direction, the main pattern further includes a third edge that is parallel to the second edge.

In this embodiment, the optical proximity correction system 50 further includes: an etching deviation compensation unit 502, configured to perform etching deviation compensation on the design pattern, and further configured to output the design pattern subjected to etching deviation compensation as a target pattern to an optical proximity effect correction unit.

The etching deviation compensation unit 502 is used for compensating the critical dimension of the design pattern based on the etching offset. After the photoetching process and the etching process are carried out, the key size of the graph formed on the wafer has deviation from the key size of the designed graph, the deviation possibly generated by the photoetching process and the etching process is compensated into the designed graph in advance by carrying out etching deviation compensation processing on the designed graph, and then the matching degree between the graph formed on the wafer and the designed graph after the photoetching process and the etching process is improved

In this embodiment, the etching deviation compensation unit 502 is configured to move the edge of the design pattern by a preset distance along a direction perpendicular to the edge of the design pattern, so as to add a line width to the edge of the design pattern, so as to compensate the etching offset.

A corner additional pattern generating unit 503 for generating a corner additional pattern in the main pattern corresponding to the vertex of the concave corner based on the design rule and the mask writing rule.

In the semiconductor field, the difficulty of optical proximity correction at the concave corner is high, and the corner additional graph is generated in the main graph corresponding to the vertex of the concave corner by the corner additional graph generating unit 503, so that after the optical proximity correction unit 505 performs optical proximity correction on the design graph to obtain the corrected graph, and when the judging unit 506 judges that the edge placement error corresponding to the concave corner of the corrected graph does not meet the preset standard, the trimming unit 507 can trim the corrected graph to trim and remove the corresponding corner additional graph from the corrected graph, so as to correspondingly improve the light intensity distribution near the concave corner where the edge placement error does not meet the preset standard, further improve the corner rounding problem at the concave corner, and reduce the edge placement error.

In this embodiment, the corner additional pattern is a rectangular pattern. The rectangular pattern is beneficial to improving the friendliness of mask manufacturing.

In this embodiment, the line width of the corner additional pattern is greater than or equal to the minimum line width of the mask writing rule, and is less than or equal to the resolution of the photolithography process.

The line width of the corner additional pattern is greater than or equal to the minimum line width of the mask writing rule, so that the trimming unit 507 trims the corrected pattern, after the corresponding corner additional pattern is trimmed and removed from the corrected pattern, the remaining corrected pattern is highly friendly to the writing of the mask, the pattern corresponding to the corner additional pattern can be manufactured in the mask, and the effect of improving the light intensity distribution during exposure can be achieved.

And the line width of the corner additional graph is smaller than the resolution of the photoetching process, so that the graph of the corner additional graph is prevented from being formed on the wafer during photoetching, and the graph formed on the wafer is prevented from being adversely affected.

In this embodiment, along the first direction, a distance from a geometric center of the corner additional pattern to the second edge is a first distance Lx, and the first distance is greater than or equal to a minimum line width min _ MRC _ CD of a mask writing rule.

In the process of writing in the mask, when the line width is smaller, the difference and the error of writing in the mask are larger, so that the first distance is greater than or equal to min _ MRC _ CD, the friendliness of writing in the mask is improved, and the probability of generating the error of writing in the mask is reduced.

Likewise, in the step of generating the corner additional pattern, the distance from the geometric center to the third edge along the first direction is greater than or equal to the minimum line width min _ MRC _ CD of the mask writing rule.

In this embodiment, along the second direction, a distance from a geometric center of the corner additional pattern to the first edge is a second distance Ly, and the second distance Ly is greater than or equal to a distance from the first edge to an adjacent layer to be cut.

In the process of designing the integrated circuit, in the design rule, for the pattern with the concave corner, the distance between the concave corner and the adjacent layer to be cut has the minimum limit L0, so that the requirement of the design rule is met by making the second distance Ly be greater than or equal to the distance from the first edge to the adjacent layer to be cut.

And the second distance Ly is less than or equal to the sum of the distance L0 from the first edge to the adjacent layer to be cut along the second direction and the Pitch P of the layer to be cut (Pitch).

In this embodiment, when a problem of corner rounding is generated during exposure, the layer to be cut adjacent to the concave corner is more significantly affected by the problem of corner rounding than the layer to be cut not adjacent to the concave corner, an edge placement error of the exposed pattern at the position of the layer to be cut adjacent to the concave corner is larger, and when the layer to be cut is cut by using the exposed pattern, a problem of line end retraction at the position of the layer to be cut adjacent to the concave corner is more serious, so that the second distance Ly is less than or equal to the sum of L0 and P, thereby significantly improving the problem of line end retraction at the position of the layer to be cut adjacent to the concave corner.

In this embodiment, the optical proximity correction system 50 further includes: an auxiliary pattern adding unit 504 for providing an auxiliary pattern around the main pattern of the design pattern output from the etching deviation compensation unit 502, and for outputting the auxiliary pattern and the main pattern to the optical proximity effect correction unit 505.

In this embodiment, the main pattern is an exposable pattern, the auxiliary pattern is a non-exposable pattern, and scattering bars are arranged around the main pattern, so that the improvement of light intensity contrast and Edge Placement Error (EPE) are facilitated, and the improvement of the focal depth is facilitated, thereby improving the window of the photoetching process. Specifically, the auxiliary pattern is a scattering bar.

The optical proximity correction unit 505 is used to adjust the contour of the design pattern to alleviate the pattern distortion problem caused by optical proximity effect. And the corrected graph is used for manufacturing a mask.

Specifically, the optical proximity effect correction is performed on the design pattern output by the etching deviation compensation unit 502 by taking the design pattern output by the etching deviation compensation unit 502 as the target pattern.

In this embodiment, the optical proximity correction unit 505 is taken as a Model-based optical proximity correction (Model-based OPC) as an example for explanation. In other embodiments, the optical proximity correction unit may also be an empirical Rule-based optical proximity correction (Rule-based OPC), or a model-based and empirical Rule-based optical proximity correction. In other embodiments, the optical proximity correction unit may also select other suitable optical proximity correction methods.

In this embodiment, the optical proximity effect correction unit 505 is configured to segment an edge of the design pattern to obtain a plurality of line segments, perform lithography simulation on the design pattern based on an optical proximity correction model to obtain a simulated exposure pattern, compare the simulated exposure pattern with the target pattern to obtain an edge placement error EPE corresponding to the simulated exposure pattern, and adjust positions of the line segments based on the edge placement error EPE.

The optical proximity effect correction unit 505 performs multiple iterations of lithography simulation, calculating an edge placement error, and adjusting line segment positions until the edge placement error of the simulated exposure pattern corresponding to the design pattern is within a preset threshold range.

A determining unit 506, configured to perform lithography simulation on the corrected graph, and determine whether edge placement errors corresponding to the concave corners in the corrected graph meet a preset standard.

In the semiconductor field, the difficulty of correcting the optical proximity effect at the concave corner is large, and the determining unit 506 determines the edge placement error EPE corresponding to each concave corner in the corrected graph output by the optical proximity effect correcting unit 505, so that the trimming unit 507 adjusts the graph near the concave corner where the edge placement error does not meet the preset standard, thereby significantly improving the optical proximity correction effect.

In particular, in the present embodiment, in the design pattern, corners of adjacent main patterns are opposite to each other at the concave corner, and have a single point of intersection. In the semiconductor field, due to the limitation of mask manufacturability rules, the difficulty of correcting the optical proximity effect of the design graph with single-point corners is higher, and the probability that the edge placement error near the corners close to the single points does not meet the preset standard is higher, so that the optical proximity correction is favorably carried out on the design graph with crossed single points, the optical proximity correction effect is favorably remarkably improved, and the optical proximity correction efficiency is improved.

In this embodiment, the design pattern is used to form a cutting layer pattern, the cutting layer pattern is used to cut off the layer to be cut along the first direction, and correspondingly, the determining unit 506 is configured to determine whether the edge placement error corresponding to the edge of the concave corner along the second direction meets the preset standard, so as to ensure that the retraction problem of the line end of the layer to be cut can be improved after the layer to be cut is cut off by using the cutting layer pattern.

A trimming unit 507 for trimming and removing the corner additional figure corresponding to the concave corner from the modified figure when the edge placement error corresponding to the concave corner does not satisfy a preset standard.

The trimming unit 507 is configured to trim and remove the corner additional pattern corresponding to the concave corner from the modified pattern, so that after the additional pattern is trimmed and removed, a pattern with a light transmittance opposite to that of the main pattern is formed in the modified pattern, and accordingly, in this embodiment, for a concave corner vertex whose edge placement error does not meet a preset standard, a pattern with a light transmittance opposite to that of the main pattern is provided, which is beneficial to improving light intensity distribution near the concave corner, thereby improving a corner rounding problem at the concave corner, reducing an edge placement error near the concave corner, and improving a matching degree between a mask pattern formed on a wafer and a target pattern.

In this embodiment, the design pattern is used to form a cutting layer pattern, the cutting layer pattern is used to cut off the layer to be cut along the first direction, and the layer to be cut is a fin portion. The problem of line end retraction of the fin part after the fin cutting process is carried out by utilizing the cutting mask layer is favorably solved by improving the problem of corner rounding at the concave corner and reducing the edge placement error close to the concave corner.

In the semiconductor manufacturing process, after the fin cutting process is carried out, a grid electrode crossing the fin part is usually formed, and the grid electrode covers part of the top and part of the side wall of the fin part.

In this embodiment, the optical proximity correction system 50 further includes: an optical proximity correction verification unit 508, configured to perform optical proximity correction on the corrected graph when the edge placement error corresponding to the concave corner meets a preset criterion, or perform optical proximity correction on the corrected graph output by the trimming unit 507.

The optical proximity effect verification unit 508 is used to verify the effect of the optical proximity effect correction process. Specifically, the optical proximity effect verification unit 508 is used for verifying the edge placement error corresponding to the corrected pattern.

From the above description, after the trimming process is performed on the corrected pattern, it is beneficial to improving the light intensity distribution at the corner near the single point during the exposure and improving the corner rounding problem at the corner near the single point, so as to reduce the edge placement error between the simulated exposure pattern and the target pattern, and improve the matching degree between the mask pattern formed on the wafer and the target pattern.

Correspondingly, the invention also provides a mask plate, which comprises: the graph obtained by the optical proximity correction method provided by the embodiment of the invention.

As can be seen from the foregoing embodiments, in the embodiments of the present invention, a pattern having a light transmission characteristic opposite to that of the main pattern is disposed on the vertex of the concave corner where the edge placement error does not meet the predetermined standard, and accordingly, when the mask of the embodiments of the present invention is used for exposure, the mask is beneficial to improving the light intensity distribution near the concave corner, thereby improving the corner rounding problem at the concave corner, reducing the edge placement error near the concave corner, and improving the matching degree between the mask pattern formed on the wafer and the target pattern.

The embodiment of the invention also provides equipment which can realize the optical proximity correction method provided by the embodiment of the invention by loading the above graphic design method in a program form. An optional hardware structure of the terminal device provided in the embodiment of the present invention may be as shown in fig. 17, and includes: at least one processor 01, at least one communication interface 02, at least one memory 03 and at least one communication bus 04.

In this embodiment, the number of the processor 01, the communication interface 02, the memory 03, and the communication bus 04 is at least one, and the processor 01, the communication interface 02, and the memory 03 complete mutual communication through the communication bus 04. The communication interface 02 may be an interface of a communication module for performing network communication, such as an interface of a GSM module. Processor 01 may be a central processing unit CPU, or an Application Specific Integrated Circuit (ASIC), or one or more Integrated circuits configured to implement an embodiment of the present invention. The memory 03 may comprise a high-speed RAM memory, and may further include a non-volatile memory (NVM), such as at least one disk memory. The memory 03 stores one or more computer instructions, which are executed by the processor 01 to implement the optical proximity correction method provided by the embodiment of the present invention.

It should be noted that the above terminal device may further include other devices (not shown) that may not be necessary for the disclosure of the embodiment of the present invention; these other components may not be necessary to understand the disclosure of embodiments of the present invention, which are not individually described herein.

Embodiments of the present invention also provide a storage medium, where one or more computer instructions are stored, where the one or more computer instructions are used to implement the optical proximity correction method provided by the embodiments of the present invention.

Embodiments of the invention may be implemented by various means, such as hardware, firmware, software, or a combination thereof. In a hardware configuration, the method according to the exemplary embodiment of the present invention may be implemented by one or more Application Specific Integrated Circuits (ASICs), Digital Signal Processors (DSPs), Digital Signal Processing Devices (DSPDs), Programmable Logic Devices (PLDs), Field Programmable Gate Arrays (FPGAs), processors, controllers, micro-controllers, microprocessors, and the like. In a firmware or software configuration, embodiments of the present invention may be implemented in the form of modules, procedures, functions, and the like. The software codes may be stored in memory units and executed by processors. The memory unit is located inside or outside the processor, and may transmit and receive data to and from the processor via various known means.

Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected by one skilled in the art without departing from the spirit and scope of the invention, as defined in the appended claims.

Claims

1. An optical proximity correction method, comprising:

providing a design pattern comprising a plurality of main patterns, wherein concave corners are formed between at least part of adjacent main patterns;

generating a corner additional graph in the main graph corresponding to the vertex of the concave corner based on a design rule and a mask writing rule;

based on the target graph, carrying out optical proximity effect correction on the design graph to obtain a corrected graph;

photoetching simulation is carried out on the corrected graph, and whether edge placement errors corresponding to the concave corners in the corrected graph meet preset standards or not is judged;

and when the edge placement error corresponding to the concave corner does not meet the preset standard, trimming the corrected graph to trim and remove the corner additional graph corresponding to the concave corner from the corrected graph.

2. The optical proximity correction method of claim 1, further comprising: after providing a design graph, generating a corner additional graph in a main graph corresponding to the vertex of a concave corner, and performing etching deviation compensation on the design graph before performing optical proximity effect correction on the design graph, wherein the design graph after the etching deviation compensation is used as the target graph.

3. The optical proximity correction method of claim 1, further comprising: when the edge placement error corresponding to the concave corner meets a preset standard, carrying out optical proximity effect verification on the corrected graph; or when the edge placement error corresponding to the concave corner does not meet a preset standard, performing optical proximity effect verification on the corrected graph after trimming processing after trimming the corrected graph.

4. The optical proximity correction method of claim 2, further comprising: providing an auxiliary pattern around the main pattern after the etching deviation compensation process is performed on the design pattern and before the optical proximity correction process is performed.

5. The method for optical proximity correction according to claim 1, wherein the corner additional pattern is a rectangular pattern.

6. The method for optical proximity correction according to claim 1, wherein the design pattern is used to form a cutting layer pattern for cutting off the layer to be cut in a first direction, the layer to be cut extending in the first direction and being spaced apart in a second direction, and the first direction is perpendicular to the second direction.

7. The method of optical proximity correction according to claim 6, wherein the primary pattern is a rectangular pattern comprising first and second edges that intersect and whose point of intersection is the vertex of the concave corner, the first edge being along the first direction and the second edge being along the second direction;

in the step of generating the corner additional graph, along the first direction, the distance from the geometric center of the corner additional graph to the second edge is a first distance, and the first distance is greater than or equal to the minimum line width of a mask plate writing rule;

and the distance from the geometric center of the corner additional figure to the first edge along the second direction is a second distance, and the second distance is greater than or equal to the distance from the first edge to the adjacent layer to be cut and is less than or equal to the sum of the distance from the first edge to the adjacent layer to be cut and the pitch of the layer to be cut along the second direction.

8. The optical proximity correction method of claim 7, wherein the primary pattern further includes a third side parallel to the second side; in the step of generating the corner additional graph, along the first direction, the distance from the geometric center to the third edge is greater than or equal to the minimum line width of the mask writing rule.

9. The method of claim 6, wherein the layer to be cut is a fin, a gate, or a metal line.

10. The method for correcting optical proximity of claim 1, wherein in the step of generating the corner additional pattern, a line width of the corner additional pattern is greater than or equal to a minimum line width of a mask writing rule and less than or equal to a resolution of a photolithography process.

11. An optical proximity correction system, comprising:

a providing unit for providing a design pattern including a plurality of main patterns, at least some of which have concave corners formed therebetween;

a corner additional figure generating unit for generating a corner additional figure in the main figure corresponding to the vertex of the concave corner based on a design rule and a mask writing rule;

the optical proximity effect correction unit is used for carrying out optical proximity effect correction on the design graph based on the target graph to obtain a corrected graph;

the judging unit is used for carrying out photoetching simulation on the corrected graph and judging whether edge placement errors corresponding to the concave corners in the corrected graph meet preset standards or not;

a trimming unit for trimming and removing the corner additional figure corresponding to the concave corner from the corrected figure when the edge placement error corresponding to the concave corner does not satisfy a preset standard.

12. The optical proximity correction system of claim 11, further comprising: and the etching deviation compensation unit is used for performing etching deviation compensation on the design graph and outputting the design graph subjected to etching deviation compensation to the optical proximity effect correction unit as a target graph.

13. The optical proximity correction system of claim 11 or 12, further comprising: and the optical proximity effect correction and verification unit is used for carrying out optical proximity effect verification on the corrected graph when the edge placement error corresponding to the concave corner meets a preset standard, or carrying out optical proximity effect verification on the corrected graph output by the trimming unit.

14. The optical proximity correction system of claim 12, further comprising: and an auxiliary pattern adding unit for providing an auxiliary pattern around the main pattern of the design pattern output from the etching deviation compensation unit and outputting the auxiliary pattern and the main pattern to the optical proximity effect correction unit.

15. A reticle, comprising: a pattern obtained by the optical proximity correction method of any one of claims 1-10.

16. An apparatus comprising at least one memory and at least one processor, the memory storing one or more computer instructions, wherein the one or more computer instructions are executed by the processor to implement the optical proximity correction method of any one of claims 1-10.

17. A storage medium having stored thereon one or more computer instructions for implementing the optical proximity correction method of any one of claims 1-10.