CN116107154B - Mask data generation method, device, equipment and medium - Google Patents
Mask data generation method, device, equipment and medium Download PDFInfo
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- CN116107154B CN116107154B CN202310391524.7A CN202310391524A CN116107154B CN 116107154 B CN116107154 B CN 116107154B CN 202310391524 A CN202310391524 A CN 202310391524A CN 116107154 B CN116107154 B CN 116107154B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/30—Computing systems specially adapted for manufacturing
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Abstract
The disclosure relates to a method, a device, equipment and a medium for generating mask data, wherein the method for generating mask data comprises the following steps: determining auxiliary graphic data based on the initial graphic data of the semiconductor structure; combining the initial graphic data and the auxiliary graphic data to obtain combined data; extracting data from the combined data to determine initial layer pattern data corresponding to each layer of the semiconductor structure; performing optical proximity effect correction on the first layer of pattern data to obtain first corrected pattern data; and determining target layer graphic data corresponding to each layer based on the first correction graphic data. The method has the advantages that the auxiliary graph data are contained in the initial layer-specific graph data of at least part of the layers, so that the increase of workload and the increase of inspection steps caused by the generation of corresponding auxiliary graph data after the separation of the graph data of each layer are avoided, the operation error rate is reduced, the operation amount and the work flow are reduced, and the mask data generation efficiency and accuracy are improved.
Description
Technical Field
The disclosure relates to the technical field of semiconductors, and in particular relates to a mask data generation method, device, equipment and medium.
Background
Because of the imperfections and diffraction effects of the optical system, optical proximity correction of the pattern data of the reticle is required, which can lead to slits in a partial region of the reticle, thereby causing defects in the pattern of the semiconductor structure when the semiconductor structure is exposed through the reticle.
In order to solve the above problems, after the mask pattern data corresponding to the semiconductor structure is separated, auxiliary pattern data is added to the mask pattern data corresponding to the layer where the pattern defect is generated due to the optical proximity correction, and the slit problem is solved by the auxiliary pattern data.
Disclosure of Invention
In order to overcome the problems in the related art, the present disclosure provides a method, an apparatus, a device, and a medium for generating mask data.
According to a first aspect of an embodiment of the present disclosure, there is provided a mask data generating method for generating data required for manufacturing a mask, the mask being used for manufacturing a semiconductor structure, the mask data generating method including:
Determining auxiliary graph data based on the initial graph data of the semiconductor structure, wherein the auxiliary graph data is used for defining a preset area in the initial graph;
combining the initial graphic data and the auxiliary graphic data to obtain combined data;
extracting data from the combined data to determine initial layer pattern data corresponding to each layer of the semiconductor structure, wherein at least part of the initial layer pattern data comprises the auxiliary pattern data;
performing optical proximity effect correction on at least part of first layer pattern data in the initial layer pattern data to obtain first corrected pattern data, wherein a corrected area is an area except for the preset area in the initial pattern corresponding to the first layer pattern data;
and determining target layer pattern data corresponding to each layer based on the first correction pattern data, wherein the target layer pattern data is used as mask pattern data, and the mask pattern data is used for generating mask pattern.
In some embodiments of the present disclosure, the semiconductor structure includes a plurality of chip regions and scribe line regions between adjacent chip regions, each of the chip regions and the scribe line regions including a guard ring region for providing a guard ring;
The determining auxiliary graphic data based on the initial graphic data of the semiconductor structure includes:
acquiring chip size data corresponding to the chip area or guard ring size data corresponding to the guard ring area in the initial graphic data;
and determining the auxiliary graph data according to the chip size data or the guard ring size data so that the preset area can cover the chip area and/or the guard ring area of the cutting channel area.
In some embodiments of the present disclosure, the performing data extraction on the merged data to determine initial layer graphics data corresponding to each layer of the semiconductor structure includes:
and extracting the graphic data corresponding to each layer from the initial graphic data, and forming the initial layer graphic data corresponding to each layer by using the graphic data corresponding to each layer and the auxiliary graphic data.
In some embodiments of the present disclosure, the reticle data generating method further includes:
marking a first preset mark on at least part of the initial layer pattern data, wherein the first preset mark is used for indicating that the initial layer pattern data needs to be subjected to optical proximity effect correction, and a correction area is an area except for the preset area in the initial pattern corresponding to the first layer pattern data;
The optical proximity effect correction is performed on the first layer of the initial layer of the image data to obtain first corrected image data, including:
determining the initial layer figure data with the first preset mark as the first layer figure data;
and carrying out optical proximity effect correction on the first layer of pattern data, wherein a correction area is an area except the preset area in the initial pattern corresponding to the first layer of pattern data, and the first correction pattern data is obtained.
In some embodiments of the present disclosure, the reticle data generating method further includes:
performing optical proximity effect correction on second layer pattern data in at least part of the initial layer pattern data to obtain second corrected pattern data, wherein a correction area is an initial pattern corresponding to the second layer pattern data;
the determining, based on the first corrected graphics data, target layer graphics data corresponding to each layer includes:
and determining each piece of initial layer pattern data, the first correction pattern data and the second correction pattern data which are not subjected to optical proximity effect correction as target layer pattern data corresponding to each layer, wherein the target layer pattern data is used as the mask plate data.
In some embodiments of the present disclosure, the reticle data generating method further includes:
and marking a second preset mark for the auxiliary graphic data in the initial layer of graphic data, wherein the second preset mark is used for representing that the auxiliary graphic data is non-production data.
In some embodiments of the present disclosure, the target layer hierarchical graphical data is GDS format data.
According to a second aspect of the embodiments of the present disclosure, there is provided a reticle data generating device, including:
a first determination module configured to determine auxiliary graphic data based on initial graphic data of the semiconductor structure, the auxiliary graphic data defining a preset region in the initial graphic;
the merging module is configured to merge the initial graphic data and the auxiliary graphic data to obtain merged data;
the extraction module is configured to perform data extraction on the combined data, and determine initial layer graphics data corresponding to each layer of the semiconductor structure, wherein at least part of the initial layer graphics data comprises the auxiliary graphics data;
The first correction module is configured to perform optical proximity effect correction on at least part of first layer pattern data in the initial layer pattern data to obtain first correction pattern data, wherein a correction area is an area except for the preset area in the initial pattern corresponding to the first layer pattern data;
the second determining module is configured to determine target layer pattern data corresponding to each layer based on the first correction pattern data, wherein the target layer pattern data is used as mask pattern data, and the mask pattern data is used for generating mask pattern.
According to a third aspect of embodiments of the present disclosure, there is provided a reticle data generating apparatus, including:
a processor;
a memory for storing processor-executable instructions;
wherein the processor is configured to perform:
determining auxiliary graphic data based on initial graphic data of the semiconductor structure, wherein the auxiliary graphic data is used for defining a preset area in the initial graphic;
combining the initial graphic data and the auxiliary graphic data to obtain combined data;
Extracting data from the combined data to determine initial layer pattern data corresponding to each layer of the semiconductor structure, wherein at least part of the initial layer pattern data comprises the auxiliary pattern data;
performing optical proximity effect correction on at least part of first layer pattern data in the initial layer pattern data to obtain first corrected pattern data, wherein a corrected area is an area except for the preset area in the initial pattern corresponding to the first layer pattern data;
and determining target layer pattern data corresponding to each layer based on the first correction pattern data, wherein the target layer pattern data is used as mask pattern data, and the mask pattern data is used for generating mask pattern.
According to a fourth aspect of embodiments of the present disclosure, there is provided a non-transitory computer-readable storage medium, which when executed by a processor of a reticle data generating device, causes the reticle data generating device to perform:
determining auxiliary graphic data based on initial graphic data of the semiconductor structure, wherein the auxiliary graphic data is used for defining a preset area in the initial graphic;
Combining the initial graphic data and the auxiliary graphic data to obtain combined data;
extracting data from the combined data to determine initial layer pattern data corresponding to each layer of the semiconductor structure, wherein at least part of the initial layer pattern data comprises the auxiliary pattern data;
performing optical proximity effect correction on at least part of first layer pattern data in the initial layer pattern data to obtain first corrected pattern data, wherein a corrected area is an area except for the preset area in the initial pattern corresponding to the first layer pattern data;
and determining target layer pattern data corresponding to each layer based on the first correction pattern data, wherein the target layer pattern data is used as mask pattern data, and the mask pattern data is used for generating mask pattern.
The technical scheme provided by the embodiment of the disclosure can comprise the following beneficial effects: the auxiliary graphic data is automatically generated based on the initial graphic data of the semiconductor structure, and the auxiliary graphic data is generated before the initial layer graphic data corresponding to each layer is extracted, so that the auxiliary graphic data is carried in the extracted initial layer graphic data of at least part of the layers, the workload increase and the checking step increase caused by respectively generating the corresponding auxiliary graphic data after the separation of the image data of each layer are avoided, the operation error rate is reduced, the operation amount and the work flow are reduced, and the mask data generation efficiency and accuracy are improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
FIG. 1 is a flowchart illustrating a reticle data generation method according to an example embodiment.
Fig. 2 is a top view of a semiconductor structure shown in accordance with an exemplary embodiment.
Fig. 3 is a partial schematic diagram of a semiconductor structure shown in accordance with an exemplary embodiment.
FIG. 4 is a block diagram illustrating a reticle data generating device according to an example embodiment.
FIG. 5 is a block diagram of a reticle data generating device, according to an example embodiment.
Fig. 6 is a schematic diagram of a reticle pattern.
FIG. 7 is a schematic diagram of a mask pattern after optical proximity correction.
Fig. 8 is a partial schematic diagram illustrating a semiconductor structure having a preset range a according to an exemplary embodiment.
Fig. 9 is a partial schematic view of a semiconductor structure having a preset range B, according to another exemplary embodiment.
Fig. 10 is a partial schematic view of a semiconductor structure having a preset range C, according to another exemplary embodiment.
Fig. 11 is a partial schematic view showing a semiconductor structure having a preset range D according to another exemplary embodiment.
In the figure:
10-a first determination module; a 20-merge module; 30-an extraction module; 40-a first correction module; 50-a second determination module; 60-chip area; 70-cutting lane area; 80-guard ring region; 801-a first guard ring region; 802-a second guard ring region; 81-guard rings; 811-a first guard ring; 812-a second guard ring; 100-a computer device; a 101-processor; 102-memory.
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the invention.
In the related art, when a designed pattern is transferred onto a photoresist through a mask plate to make a semiconductor structure have a special pattern, the pattern on the photoresist and the pattern on the mask are not completely consistent due to the incompleteness and diffraction effect of an optical system, optical proximity effect correction (Optical Proximity Correction, OPC) is required to be performed on the pattern data of the mask plate, fig. 6 and fig. 7 are schematic diagrams before and after optical proximity effect correction is performed on the pattern data of the mask plate, and a slit defect exists between a chip area 60 and a scribe line area 70 due to the mask plate manufactured after data conversion of the corrected pattern data in a photomask factory, so that the product yield is affected.
To solve the above problem, the auxiliary pattern data is generally generated according to the size of the chip area 60 to determine the area of the partial layer where the optical proximity correction is not performed, so that the edges of the chip area 60 and the scribe line area 70 after correction extend to the same complete connection area, thereby avoiding the occurrence of slit defects. However, in the existing mask data generating method, since the semiconductor structure has a plurality of layers, and each layer is subjected to photolithography, a corresponding mask is required to be manufactured, each mask has a specific mask pattern, therefore, each layer of separation and extraction is required to be performed on the initial pattern data of the semiconductor structure, then the auxiliary pattern data are manually calculated and generated according to the extracted pattern data of each layer, and are manually added into the corresponding initial pattern data one by one, and finally the mask data for generating the mask pattern is obtained by performing optical proximity effect correction on the initial pattern data of each layer under the limiting effect of the auxiliary pattern data, and each layer of mask data corresponds to one layer of mask.
The data processing process has large operation amount, and operation is performed on the basis of the data after the layering separation, so that operation result errors and operation errors are easy to cause. In addition, in order to avoid the influence of the operation on the arrangement of other marks in each separated layer, an additional inspection step is needed to inspect the other marks, thereby influencing the working efficiency.
Based on this, the exemplary embodiment of the disclosure provides a mask data generating method, which automatically generates auxiliary graphic data based on initial graphic data of a semiconductor structure, and generates the auxiliary graphic data before extracting initial layer graphic data corresponding to each layer, so that the extracted initial layer graphic data of at least part of layers has auxiliary graphic data, thereby avoiding the increase of workload and the increase of inspection steps caused by respectively generating corresponding auxiliary graphic data after separating the image data of each layer, reducing the operation error rate, reducing the operation amount and the workflow, and improving the mask data generating efficiency and accuracy.
In an exemplary embodiment, referring to fig. 1, there is provided a reticle data generating method, including:
s100, determining auxiliary graph data based on initial graph data of the semiconductor structure, wherein the auxiliary graph data is used for defining a preset area in the initial graph.
In step S100, the initial pattern data of the semiconductor structure may be, for example, all data for defining the semiconductor structure or data other than the inside of the chip in the semiconductor structure, and the auxiliary pattern data may be determined according to the initial pattern data of the semiconductor structure, where the auxiliary pattern data is used to define a preset region in the semiconductor structure, and may include, for example, a position, a size, and the like of the preset region in the semiconductor structure.
And S200, merging the initial graphic data and the auxiliary graphic data to obtain merged data.
In step S200, the initial pattern data and the auxiliary pattern data are combined to obtain combined data, i.e. the combined data includes all of the initial pattern data for defining the semiconductor structure or the auxiliary pattern data for defining the semiconductor structure except for the inside of the chip, and the auxiliary pattern data for defining a specific preset area in the semiconductor structure.
S300, extracting data from the combined data to determine initial layer pattern data corresponding to each layer of the semiconductor structure, wherein at least part of the initial layer pattern data comprises auxiliary pattern data.
In step S300, the merged data is separated, and the initial layer pattern data corresponding to each layer of the semiconductor structure is extracted, and since the merged data includes the initial pattern data and the auxiliary pattern data, the initial layer pattern data may include the initial pattern data corresponding to the layer and the auxiliary pattern data capable of defining a predetermined region range in the layer. The auxiliary graphic data may be included in at least part of the initial layer graphic data, for example, all of the initial layer graphic data may include the auxiliary graphic data, or part of the initial layer graphic data may include the auxiliary graphic data.
S400, performing optical proximity effect correction on first layer pattern data in at least part of initial layer pattern data to obtain first corrected pattern data, wherein the corrected area is an area except a preset area in the initial pattern corresponding to the first layer pattern data.
In step S400, the first layered graphic data includes auxiliary graphic data, and the optical proximity effect correction is performed on the first layered graphic data by defining a preset area in the auxiliary graphic data, where the corrected area is an area except the preset area in the initial graphic corresponding to the first layered graphic data.
S500, determining target layer pattern data corresponding to each layer based on the first correction pattern data, wherein the target layer pattern data is used as mask pattern data, and the mask pattern data is used for generating mask pattern.
In step S500, the first layer of graphics data is subjected to optical proximity correction to obtain first corrected graphics data, where the first corrected graphics data of the layer subjected to optical proximity correction is the target layer of graphics data corresponding to the layer, and the target layer of graphics data is the generated mask data, and the mask data can be used to generate a mask graphics, and can be submitted to a photomask factory for data conversion and mask production.
The merging data comprises initial image data and auxiliary image data for defining a semiconductor structure, the merging data is separated according to the characteristics of a multi-layer structure of the semiconductor structure, the initial layer image data corresponding to each layer can be extracted, the first layer image data is the initial layer image data corresponding to the layer which needs to be subjected to optical proximity effect correction in all the initial layer image data and possibly has slit problems after correction.
In the embodiment, the auxiliary graphic data is automatically generated based on the initial graphic data of the semiconductor structure, and the auxiliary graphic data is generated before the initial layer graphic data corresponding to each layer is extracted, so that the auxiliary graphic data is carried in the extracted initial layer graphic data of at least part of the layers, the increase of the workload and the increase of the checking steps caused by respectively generating the corresponding auxiliary graphic data after the separation of the image data of each layer are avoided, the operation error rate is reduced, the operation amount and the work flow are reduced, and the mask data generation efficiency and the accuracy are improved.
In one embodiment, referring to fig. 2 and 3, the semiconductor structure includes a plurality of chip regions 60 and scribe line regions 70 between adjacent chip regions 60, each of the chip regions 60 and the scribe line regions 70 including a guard ring region 80 for providing a guard ring 81.
Before the semiconductor structure is fabricated on the wafer, the wafer needs to be laid out to divide the wafer into a plurality of chip regions 60 and scribe line regions 70 between the chip regions 60, the chip regions 60 are used for subsequently forming a plurality of chips in the semiconductor structure, and the scribe line regions 70 are used as dicing regions for dicing the chip regions 60 at the packaging stage after the semiconductor structure is fabricated. Guard ring 81 is used to protect chip region 60 during dicing, prevent dicing from damaging the chip and prevent static electricity generated during dicing from affecting semiconductor devices in chip region 60. The guard ring region 80 is disposed in an annular region where the chip region 60 intersects the dicing street region 70, and the guard ring region 80 includes a first guard ring region 801 located in the chip region 60 and a second guard ring region 802 located in the dicing street region 70, as shown with reference to fig. 3, the first guard ring region 801 and the second guard ring region 802 being separated by a dashed line in fig. 3, which is also the boundary between the chip region 60 and the dicing street region 70.
Accordingly, guard ring 81 includes a first guard ring 811 in first guard ring region 801 and a second guard ring 812 in second guard ring region 802. The number of the first protection rings 811 in the same first protection ring region 801 may be one or plural, and when the number of the first protection rings 811 is plural, the plurality of the first protection rings 811 are sequentially arranged from inside to outside. The number of the second guard rings 812 in the same second guard ring area 802 may be one or more, and when there are a plurality of the second guard rings 812, the plurality of second guard rings are sequentially arranged from inside to outside.
Determining auxiliary graphics data based on the initial graphics data of the semiconductor structure, comprising:
s110, acquiring chip size data corresponding to the chip area or guard ring size data corresponding to the guard ring area in the initial graph data.
In step S110, chip size data corresponding to the chip region 60 or guard ring size data corresponding to the guard ring region 80 in the initial pattern data is acquired, and the chip size data and the guard ring size data may be, for example, data information for defining the number, size, position, shape, etc. of the chip region 60 and the guard ring region 80, and the area range corresponding to the chip region 60 or the guard ring region 80 in the semiconductor structure may be determined by the chip size data or the guard ring size data.
And S120, determining auxiliary graphic data according to the chip size data or the guard ring size data so that the preset area can cover the chip area and/or the guard ring area of the cutting channel area.
In step S120, since the area range corresponding to the chip area 60 or the guard ring area 80 in the semiconductor structure can be determined according to the chip size data or the guard ring size data, the auxiliary pattern data for defining the predetermined area can be determined according to the chip size data or the guard ring size data, and the range of the predetermined area can be defined according to the auxiliary pattern data determined according to the chip size data or the guard ring size data.
For example, the preset area can cover the second guard ring area 802 of the scribe line area 70, and the outer contour of the preset area may coincide with the outer contour of the second guard ring area 802, or as shown in fig. 8, the outer contour of the preset area represented by the area a is located outside the second guard ring area 802. Alternatively, the preset region may cover the first guard ring region 801 in the chip region 60 and the second guard ring region 802 in the scribe line region 70, and the outer contour of the preset region may overlap with the outer contour of the region formed by the first guard ring region 801 and the second guard ring region 802, or the outer contour of the preset region represented by the region B may be located outside the region formed by the first guard ring region 801 and the second guard ring region 802, as shown in fig. 9.
In this embodiment, the preset area covers the guard ring area 80 provided with the guard ring 81, so that the preset area defined by the auxiliary graphic data is the connection area between the chip area 60 and the scribe line area 70, which is a pre-requisite condition for solving the slit problem without performing optical proximity effect correction in the subsequent area, and the automatic generation of the auxiliary graphic data is realized by determining the chip size data or the guard ring size data to the preset range, thereby reducing the huge workload caused by manual calculation, avoiding the problems of misoperation and the like possibly caused by manually adding data, and improving the mask data generation efficiency and accuracy.
In addition, the preset area may cover all or a part of the first guard ring area 801. Illustratively, as shown in fig. 10, four corners of the first protection ring 811 are chamfered, and the shape of the preset area represented by the C area is adapted to the shape of the first protection ring 811, that is, the outer contour and the inner contour of the shape of the preset area are chamfered at the four corners. As shown in fig. 11, the outer contour and the inner contour of the shape of the preset area represented by the D area may be set at right angles at four corners, and a part of the first protection ring 811 may not be covered by the preset area, so that the outer contour of the shape of the preset area may be located outside all the first protection rings 811.
In one embodiment, the data extraction of the combined data to determine initial layer pattern data corresponding to each layer of the semiconductor structure includes: and extracting the graphic data corresponding to each layer from the initial graphic data, and forming the initial layer graphic data corresponding to each layer by using the graphic data corresponding to each layer and the auxiliary graphic data.
The semiconductor structure comprises a plurality of layers, the manufacturing of each layer is required to be carried out corresponding pattern design to form specific structures such as contact holes, metal wires and the like, the plurality of layers of the corresponding semiconductor structure can extract the pattern data of each layer from the initial pattern data of the combined data, and the auxiliary pattern data used for defining the preset area is the same in the preset area defined by each layer, so that the pattern data corresponding to each layer can be respectively formed into initial layer pattern data corresponding to each layer with the auxiliary pattern data.
In this embodiment, by extracting the data of the combined data, the initial layer graphics data obtained by layer separation and extraction can have graphics data corresponding to each layer and auxiliary graphics data for defining a preset area. In the prior art, the initial layer data is generally directly extracted, only the graphic data corresponding to each layer can be obtained after the layer separation and extraction, and the operation and addition of the auxiliary graphic data are required to be respectively carried out on the graphic data corresponding to each layer after the separation. According to the embodiment, the operation and addition of auxiliary graphic data are not needed to be carried out on each separated layer, the problems of error rate increase, possible misoperation and the like caused by operation on the separated layers are avoided, and the mask generation efficiency and accuracy are improved.
In one embodiment, the mask data generating method further includes:
s600, marking a first preset mark on at least part of the initial layer pattern data, wherein the first preset mark is used for indicating that the initial layer pattern data needs to be subjected to optical proximity effect correction, and the correction area is an area except a preset area in the initial pattern corresponding to the first layer pattern data.
In step S600, the partial initial layer pattern data refers to the initial layer pattern data corresponding to the layer that needs to be subjected to optical proximity correction and may have a slit problem after correction, and the partial initial layer pattern data is marked with a first preset mark to indicate that the initial layer pattern data needs to be subjected to optical proximity correction, and no optical proximity correction is performed in a preset area during the correction process.
In this embodiment, the first preset identifier is marked on at least part of the initial layer pattern data, so that the first preset identifier can be identified when the optical proximity effect correction is performed subsequently, the optical proximity effect correction is performed on the initial layer pattern data with the first preset identifier, the optical proximity effect correction is not performed in a preset area in the correction process, the limitation of the identification and correction conditions of the initial layer pattern data required to be subjected to the optical proximity effect correction is realized, the pre-requisite condition that the optical proximity effect correction is not performed in the subsequent preset area to solve the slit problem is provided, the output of unnecessary data after the separation layer data is extracted is reduced, and the mask generation efficiency and accuracy are improved.
In one embodiment, performing optical proximity effect correction on first layer pattern data in at least part of initial layer pattern data to obtain first corrected pattern data includes:
s410, determining the initial layer pattern data with the first preset mark as first layer pattern data.
In step S410, the initial layer pattern data with the first preset identifier is determined as first layer pattern data, that is, the first layer pattern data is the initial layer pattern data corresponding to the layer that needs to be corrected for optical proximity effect and may have a slit problem after correction in all the initial layer pattern data.
S420, performing optical proximity effect correction on the first layer of pattern data, wherein the correction area is an area except a preset area in the initial pattern corresponding to the first layer of pattern data, and obtaining the first correction pattern data.
In step S420, the optical proximity effect correction is performed on the first layered pattern data with the first preset mark, and the optical proximity effect correction is not performed in the preset area to reserve the connection area between the chip area 60 and the scribe line area 70 in the initial pattern corresponding to the first layered pattern data, so as to avoid the generation of the slit between the chip area 60 and the scribe line area 70.
In this embodiment, the initial layer pattern data with the first preset identifier is determined as the first layer pattern data, so as to implement the marking function of the first preset identifier, so that at least part of the initial layer pattern data can be identified as the first layer pattern data, and special correction of the first layer pattern data is implemented through correction instructions of the first preset identifier and the auxiliary pattern data, thereby avoiding the generation of error data and the increase of operation amount caused by performing optical proximity effect correction on other initial layers without the first preset identifier, ensuring the accurate output of the first correction pattern data, and improving the mask generation efficiency and accuracy.
In one embodiment, the mask data generating method further includes:
s700, optical proximity effect correction is carried out on second layer pattern data in at least part of initial layer pattern data, second correction pattern data is obtained, and the correction area is an initial pattern corresponding to the second layer pattern data.
The second layer pattern data in the partial initial layer pattern data refers to the initial layer pattern data corresponding to the layer which needs to be subjected to optical proximity effect correction and has no slit problem after correction in all the initial layer pattern data, so that the second layer pattern data also needs to be subjected to optical proximity effect correction, but the correction area of the second layer pattern data does not need to be further limited, and the final result is second correction pattern data.
In this embodiment, in addition to the first layer of graphics data, a part of initial layer of graphics data needs to be subjected to optical proximity effect correction, and the setting of step S700 realizes the identification and correction of the part of initial layer of graphics data, and ensures that the correction area is the whole range of the corresponding initial graphics, so that the finally obtained second correction graphics data and first correction graphics data can be respectively used as the correction results of the second layer of graphics data and the first layer of graphics data, thereby improving the efficiency and accuracy of mask data generation.
In one embodiment, determining target layer graphics data corresponding to each layer based on the first corrected graphics data includes: and determining the initial layer pattern data, the first correction pattern data and the second correction pattern data which are not subjected to optical proximity effect correction as target layer pattern data corresponding to each layer, wherein the target layer pattern data is used as mask data.
The first correction pattern data is obtained after optical proximity effect correction is carried out on first layer pattern data in the initial layer pattern data, the second correction pattern data is obtained after optical proximity effect correction is carried out on second layer pattern data in the initial layer pattern data, therefore, all layers forming a semiconductor structure are formed by the initial layer pattern data which is not subjected to optical proximity effect correction, the first correction pattern data and the layers corresponding to the second correction pattern data together, and finally determined target layer pattern data is finally outputted mask pattern data of all layers.
In this embodiment, by determining each initial layer of graphics data, first corrected graphics data, and second corrected graphics data, which are not subjected to optical proximity correction, as the target layer of graphics data corresponding to each layer, each layer of target layer of graphics data is final graphics data generated correspondingly after judging and classifying according to whether each layer is required to be subjected to optical proximity correction and limiting correction conditions, thereby ensuring the integrity and accuracy of mask data generation.
In one embodiment, the mask data generating method further includes:
s800, marking a second preset mark for auxiliary graphic data in the graphic data of each initial layer, wherein the second preset mark is used for representing that the auxiliary graphic data is non-production data.
The second preset mark is used for representing the auxiliary graph data and is only used as non-production data defining a preset area range so as to limit the correction range of the first layer of graph data, and the auxiliary graph data is not grabbed by a photomask factory when the photomask factory receives the mask data for conversion and subsequent mask manufacturing production.
In this embodiment, the second preset identifier is marked on the auxiliary graphic data, so that the auxiliary graphic data in the generated final mask data can be identified and not captured by a photomask factory, and the auxiliary graphic data is only used as auxiliary data for limiting the optical proximity effect correction area to solve the slit problem, thereby avoiding the interference of the auxiliary graphic data on the mask manufacturing production process and improving the efficiency and accuracy of subsequent data conversion and mask manufacturing production.
In one embodiment, the target layer hierarchical graphics data is GDS format data.
The GDS (Graphic Data Stream, graphic data stream file) is mainly composed in the form of a module structure, and each module may also include a plurality of module parameters of multiple layers besides a plurality of geometric figures called pixels. After the target layer pattern data in the GDS format is output to a photomask manufacturer, the photomask manufacturer can convert the data in the GDS format into data in a production-level electron beam exposure system (Manufacturing Electron-Beam Exposure System, MEBES) format for mask manufacturing, wherein the pattern defined by the pattern data in the GDS format is opposite to the pattern defined by the pattern data in the MEBES format.
In an exemplary embodiment, referring to fig. 4, there is provided a reticle data generating device including a first determining module 10, a merging module 20, an extracting module 30, a first correcting module 40, and a second determining module 50, the first determining module 10 being configured to determine auxiliary graphic data based on initial graphic data of a semiconductor structure, the auxiliary graphic data being used to define a preset region in the initial graphic; the merging module 20 is configured to merge the initial graphics data and the auxiliary graphics data to obtain merged data; the extraction module 30 is configured to perform data extraction on the combined data, and determine initial layer pattern data corresponding to each layer of the semiconductor structure, wherein at least part of the initial layer pattern data includes auxiliary pattern data; the first correction module 40 is configured to perform optical proximity effect correction on the first layer of the at least part of the initial layer of the image data to obtain first corrected image data, where the corrected area is an area except a preset area in the initial image corresponding to the first layer of the image data; the second determining module 50 is configured to determine, based on the first corrected graphics data, target layer graphics data corresponding to each layer, the target layer graphics data being mask data, the mask data being used to generate a mask graphics.
In this embodiment, the first determining module 10 automatically generates the auxiliary graphics data based on the initial graphics data of the semiconductor structure, and before the extracting module 30 extracts the initial layer graphics data corresponding to each layer, the first determining module 10 causes the auxiliary graphics data to be included in the initial layer graphics data of the partial layer extracted by the extracting module 30, thereby avoiding the increase of workload and the increase of inspection steps caused by generating the corresponding auxiliary graphics data after separating the layer graphics data, reducing the operation error rate, reducing the operation amount and the workflow, and improving the mask data generation efficiency and accuracy.
In one embodiment, the mask data generating device further includes: the first marking module is configured to mark at least part of the initial layer pattern data with a first preset mark, wherein the first preset mark is used for indicating that the initial layer pattern data needs to be subjected to optical proximity effect correction, and the correction area is an area except for a preset area in the initial pattern corresponding to the first layer pattern data.
In this embodiment, the first mark module marks the first preset mark on at least part of the initial layer pattern data, so that the first preset mark can be identified when the optical proximity effect correction is performed subsequently, the optical proximity effect correction is performed on the initial layer pattern data with the first preset mark, and the optical proximity effect correction is not performed in the preset area in the correction process, so that the limitation of the identification and correction conditions of the initial layer pattern data which needs to be subjected to the optical proximity effect correction is realized, the pre-requisite condition that the optical proximity effect correction is not performed in the subsequent preset area to solve the slit problem is provided, the output of unnecessary data after the separation layer extracts the data is reduced, and the mask generation efficiency and accuracy are improved.
In one embodiment, the mask data generating device further includes: and the second correction module is configured to perform optical proximity effect correction on the second layer pattern data in at least part of the initial layer pattern data to obtain second correction pattern data, wherein the correction area is an initial pattern corresponding to the second layer pattern data.
In this embodiment, in addition to the first layer of graphics data, a part of initial layer of graphics data needs to be subjected to optical proximity effect correction, and the second correction module is configured to identify and correct the part of initial layer of graphics data, and ensure that the correction area is the whole range of the corresponding initial graphics, so that the finally obtained second correction graphics data and first correction graphics data can be respectively used as correction results of the second layer of graphics data and the first layer of graphics data, thereby improving efficiency and accuracy of mask data generation.
In one embodiment, the mask data generating device further includes: and the second marking module is configured to mark a second preset mark on the auxiliary graphic data in the graphic data of each initial layer, wherein the second preset mark is used for representing that the auxiliary graphic data is non-production data.
In this embodiment, the second preset identifier is marked on the auxiliary graphic data by the second marking module, so that the auxiliary graphic data in the generated final mask data can be identified and not captured by a photomask factory, and the auxiliary graphic data is only used as auxiliary data for limiting an optical proximity effect correction area to solve the slit problem, thereby avoiding the interference of the auxiliary graphic data on the mask manufacturing production process and improving the efficiency and accuracy of subsequent data conversion and mask manufacturing production.
Fig. 5 is a block diagram of a reticle data generating device, i.e., computer device 100, according to an example embodiment. For example, the computer device 100 may be provided as a terminal device. Referring to fig. 5, the computer device 100 includes a processor 101, and the number of the processor 101 may be set to one or more as needed. Computer device 100 also includes a memory 102 for storing instructions, such as application programs, executable by processor 101. The number of memories 102 may be set to one or more as desired. Which may store one or more applications. The processor 101 is configured to execute instructions to perform the above-described method.
It will be apparent to those skilled in the art that embodiments of the present disclosure may be provided as a method, apparatus (device), or computer program product. Accordingly, the present disclosure may take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the present disclosure may take the form of a computer program product embodied on one or more computer-usable storage media having computer-usable program code embodied therein. Computer storage media includes volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information such as computer readable instructions, data structures, program modules or other data, including, but not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, digital Versatile Disk (DVD) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium which can be used to store the desired information and which can be accessed by a computer. Furthermore, it is well known to those skilled in the art that communication media typically embodies computer readable instructions, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media.
In one exemplary embodiment, a non-transitory computer readable storage medium is provided, such as memory 102, comprising instructions executable by processor 101 of computer device 100 to perform the above-described method. For example, the non-transitory computer readable storage medium may be ROM, random Access Memory (RAM), CD-ROM, magnetic tape, floppy disk, optical data storage device, etc.
The instructions in the storage medium, when executed by the processor of the reticle data generating device, cause the reticle data generating device to perform:
determining auxiliary graphic data based on the initial graphic data of the semiconductor structure, wherein the auxiliary graphic data is used for defining a preset area in the initial graphic;
combining the initial graphic data and the auxiliary graphic data to obtain combined data;
extracting data from the combined data to determine initial layer pattern data corresponding to each layer of the semiconductor structure, wherein at least part of the initial layer pattern data comprises auxiliary pattern data;
performing optical proximity effect correction on first layer pattern data in at least part of initial layer pattern data to obtain first corrected pattern data, wherein a correction area is an area except a preset area in an initial pattern corresponding to the first layer pattern data;
And determining target layer pattern data corresponding to each layer based on the first correction pattern data, wherein the target layer pattern data is used as mask pattern data, and the mask pattern data is used for generating mask pattern.
The present disclosure is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (devices) and computer program products according to embodiments of the disclosure. It will be understood that each flow and/or block of the flowchart illustrations and/or block diagrams, and combinations of flows and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
In this disclosure, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising … …" does not exclude the presence of additional identical elements in an article or apparatus that comprises the element.
Claims (9)
1. The utility model provides a mask version data generation method for the data that the production mask version needs, the mask version is used for making semiconductor structure, its characterized in that, mask version data generation method includes:
Determining auxiliary graph data based on the initial graph data of the semiconductor structure, wherein the auxiliary graph data is used for defining a preset area in the initial graph;
combining the initial graphic data and the auxiliary graphic data to obtain combined data;
extracting data from the combined data to determine initial layer pattern data corresponding to each layer of the semiconductor structure, wherein at least part of the initial layer pattern data comprises the auxiliary pattern data;
performing optical proximity effect correction on at least part of first layer pattern data in the initial layer pattern data to obtain first corrected pattern data, wherein a corrected area is an area except for the preset area in the initial pattern corresponding to the first layer pattern data;
determining target layer pattern data corresponding to each layer based on the first correction pattern data, wherein the target layer pattern data is used as mask pattern data, and the mask pattern data is used for generating mask pattern;
the semiconductor structure comprises a plurality of chip areas and cutting channel areas between adjacent chip areas, wherein the chip areas and the cutting channel areas comprise protection ring areas for arranging protection rings;
The determining auxiliary graphic data based on the initial graphic data of the semiconductor structure includes:
acquiring chip size data corresponding to the chip area or guard ring size data corresponding to the guard ring area in the initial graphic data;
and determining the auxiliary graph data according to the chip size data or the guard ring size data so that the preset area can cover the chip area and/or the guard ring area of the cutting channel area.
2. The method for generating mask data according to claim 1, wherein the performing data extraction on the merged data to determine initial layer graphics data corresponding to each layer of the semiconductor structure includes:
and extracting the graphic data corresponding to each layer from the initial graphic data, and forming the initial layer graphic data corresponding to each layer by using the graphic data corresponding to each layer and the auxiliary graphic data.
3. The reticle data generation method according to claim 2, wherein the reticle data generation method further comprises:
marking a first preset mark on at least part of the initial layer pattern data, wherein the first preset mark is used for indicating that the initial layer pattern data needs to be subjected to optical proximity effect correction, and a correction area is an area except for the preset area in the initial pattern corresponding to the first layer pattern data;
The optical proximity effect correction is performed on the first layer of the initial layer of the image data to obtain first corrected image data, including:
determining the initial layer figure data with the first preset mark as the first layer figure data;
and carrying out optical proximity effect correction on the first layer of pattern data, wherein a correction area is an area except the preset area in the initial pattern corresponding to the first layer of pattern data, and the first correction pattern data is obtained.
4. The reticle data generation method of claim 1, further comprising:
performing optical proximity effect correction on second layer pattern data in at least part of the initial layer pattern data to obtain second corrected pattern data, wherein a correction area is an initial pattern corresponding to the second layer pattern data;
the determining, based on the first corrected graphics data, target layer graphics data corresponding to each layer includes:
and determining each piece of initial layer pattern data, the first correction pattern data and the second correction pattern data which are not subjected to optical proximity effect correction as target layer pattern data corresponding to each layer, wherein the target layer pattern data is used as the mask plate data.
5. The reticle data generation method of claim 1, further comprising:
and marking a second preset mark for the auxiliary graphic data in the initial layer of graphic data, wherein the second preset mark is used for representing that the auxiliary graphic data is non-production data.
6. The method according to any one of claims 1 to 5, wherein the target layer-specific graphic data is GDS format data.
7. The utility model provides a mask version data generation device which characterized in that, mask version data generation device includes:
a first determination module configured to determine auxiliary graphic data based on initial graphic data of the semiconductor structure, the auxiliary graphic data defining a preset region in the initial graphic;
the merging module is configured to merge the initial graphic data and the auxiliary graphic data to obtain merged data;
the extraction module is configured to perform data extraction on the combined data, and determine initial layer graphics data corresponding to each layer of the semiconductor structure, wherein at least part of the initial layer graphics data comprises the auxiliary graphics data;
The first correction module is configured to perform optical proximity effect correction on at least part of first layer pattern data in the initial layer pattern data to obtain first correction pattern data, wherein a correction area is an area except for the preset area in the initial pattern corresponding to the first layer pattern data;
the second determining module is configured to determine target layer pattern data corresponding to each layer based on the first correction pattern data, wherein the target layer pattern data is used as mask pattern data, and the mask pattern data is used for generating mask pattern;
the semiconductor structure comprises a plurality of chip areas and cutting channel areas between adjacent chip areas, wherein the chip areas and the cutting channel areas comprise protection ring areas for arranging protection rings;
the determining auxiliary graphic data based on the initial graphic data of the semiconductor structure includes:
acquiring chip size data corresponding to the chip area or guard ring size data corresponding to the guard ring area in the initial graphic data;
and determining the auxiliary graph data according to the chip size data or the guard ring size data so that the preset area can cover the chip area and/or the guard ring area of the cutting channel area.
8. A reticle data generating device, characterized in that the reticle data generating device comprises:
a processor;
a memory for storing processor-executable instructions;
wherein the processor is configured to perform:
determining auxiliary graphic data based on initial graphic data of the semiconductor structure, wherein the auxiliary graphic data is used for defining a preset area in the initial graphic;
combining the initial graphic data and the auxiliary graphic data to obtain combined data;
extracting data from the combined data to determine initial layer pattern data corresponding to each layer of the semiconductor structure, wherein at least part of the initial layer pattern data comprises the auxiliary pattern data;
performing optical proximity effect correction on at least part of first layer pattern data in the initial layer pattern data to obtain first corrected pattern data, wherein a corrected area is an area except for the preset area in the initial pattern corresponding to the first layer pattern data;
determining target layer pattern data corresponding to each layer based on the first correction pattern data, wherein the target layer pattern data is used as mask pattern data, and the mask pattern data is used for generating mask pattern;
The semiconductor structure comprises a plurality of chip areas and cutting channel areas between adjacent chip areas, wherein the chip areas and the cutting channel areas comprise protection ring areas for arranging protection rings;
the determining auxiliary graphic data based on the initial graphic data of the semiconductor structure includes:
acquiring chip size data corresponding to the chip area or guard ring size data corresponding to the guard ring area in the initial graphic data;
and determining the auxiliary graph data according to the chip size data or the guard ring size data so that the preset area can cover the chip area and/or the guard ring area of the cutting channel area.
9. A non-transitory computer-readable storage medium, wherein instructions in the storage medium, when executed by a processor of a reticle data generating device, cause the reticle data generating device to perform:
determining auxiliary graphic data based on initial graphic data of the semiconductor structure, wherein the auxiliary graphic data is used for defining a preset area in the initial graphic;
combining the initial graphic data and the auxiliary graphic data to obtain combined data;
Extracting data from the combined data to determine initial layer pattern data corresponding to each layer of the semiconductor structure, wherein at least part of the initial layer pattern data comprises the auxiliary pattern data;
performing optical proximity effect correction on at least part of first layer pattern data in the initial layer pattern data to obtain first corrected pattern data, wherein a corrected area is an area except for the preset area in the initial pattern corresponding to the first layer pattern data;
determining target layer pattern data corresponding to each layer based on the first correction pattern data, wherein the target layer pattern data is used as mask pattern data, and the mask pattern data is used for generating mask pattern;
the semiconductor structure comprises a plurality of chip areas and cutting channel areas between adjacent chip areas, wherein the chip areas and the cutting channel areas comprise protection ring areas for arranging protection rings;
the determining auxiliary graphic data based on the initial graphic data of the semiconductor structure includes:
acquiring chip size data corresponding to the chip area or guard ring size data corresponding to the guard ring area in the initial graphic data;
And determining the auxiliary graph data according to the chip size data or the guard ring size data so that the preset area can cover the chip area and/or the guard ring area of the cutting channel area.
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