CN117348333B - Mask, optical proximity correction method and device and electronic equipment - Google Patents
Mask, optical proximity correction method and device and electronic equipment Download PDFInfo
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- CN117348333B CN117348333B CN202311648783.XA CN202311648783A CN117348333B CN 117348333 B CN117348333 B CN 117348333B CN 202311648783 A CN202311648783 A CN 202311648783A CN 117348333 B CN117348333 B CN 117348333B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
Abstract
The invention provides a mask, an optical proximity correction method, an optical proximity correction device and electronic equipment, which are applied to the technical field of semiconductors. Specifically, initial optical proximity correction of a first movement amount is performed on a line endpoint graph in a test layout for a plurality of times until an edge position error of the line endpoint graph is smaller than a first threshold value, then a new evaluation function is introduced, namely a concave area is constructed based on a first simulation graph and a target graph of the line endpoint graph, then a line edge of a pinch problem of the line endpoint graph is screened out by utilizing the relation between the area of the concave graph and a second threshold value, and line edge displacement adjustment of a second movement amount is performed on the line edge, so that the probability of 'open circuit' (pinch) of a semiconductor structure formed by the line endpoint graph on a mask on a silicon wafer can be effectively reduced within the total number of times of reducing or maximally executing preset correction iterations, and further the accuracy and efficiency of OPC correction are improved.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing technologies, and in particular, to a mask, an optical proximity correction method, an optical proximity correction device, and an electronic device.
Background
At present, after a model-based optical proximity correction (Optical Proximity Correction, abbreviated as OPC) method is widely applied, the general optical proximity effect can be well compensated, so that the pattern on the chip can be finally close to the size and shape of the target pattern as much as possible. The OPC correction method based on the model is to simulate the photoetching patterns of different patterns under specific conditions so as to compensate the pattern distortion caused by the optical proximity effect, and continuously correct and simulate the patterns to obtain the corrected patterns which can be closest to the target patterns.
Specifically, for the line endpoint graph included in the layout, the OPC correction method mainly executed in the industry at present is to set a plurality of cutting points on each line edge of the line endpoint graph, then perform a plurality of line edge displacement adjustment on a plurality of line edges included in the line endpoint graph, and after each time the plurality of line edges included in the line endpoint graph are moved according to a preset first movement amount, respectively calculate edge position errors of a simulation graph and a target graph of the line endpoint graph after each movement, and the next first movement amount of the line edge is determined according to the edge position errors calculated after the last displacement of the line edge until the preset total iteration number is reached.
However, due to unreasonable arrangement of the dividing points or the fact that the arrangement of the dividing points cannot take into account all positions of the line endpoint patterns, when the line endpoint patterns on the mask corrected by the existing OPC correction method form corresponding structures on the silicon wafer, the problem that the line edge is broken (pinch) due to the fact that the line width between two line segments of the line edge is smaller than a target design value often occurs.
Disclosure of Invention
The invention aims to provide a mask, an optical proximity correction method, an optical proximity correction device and electronic equipment, which can effectively reduce the probability of 'open circuit' (pin) of a semiconductor structure formed by a line endpoint pattern on a mask on a silicon wafer, thereby improving the accuracy and efficiency of OPC correction and finally realizing the purpose of reducing the risk of a semiconductor photoetching process.
In order to solve the above technical problems, the present invention provides an optical proximity correction method, which specifically includes: determining a test layout corresponding to a prefabricated layout and a target graph of a line endpoint graph contained in the test layout, wherein the line endpoint graph is a closed graph formed by a plurality of line edges.
And carrying out initial optical proximity correction of at least one line edge by a first movement amount for the line end point graph until the edge placement error of the line end point graph is smaller than a first threshold value.
And screening a concave area of the first simulation pattern compared with the target pattern according to the target pattern of the line endpoint pattern and the first simulation pattern after the initial optical proximity correction is executed at least once, and calculating the area of the concave area.
And if the area of the concave region is not smaller than a second threshold value, performing target optical proximity correction of at least one second movement amount on the line edge corresponding to the concave region on the line endpoint graph until the preset total correction iteration times are reached or the area of the concave region is smaller than the second threshold value.
Further, the line edge may be formed by two line segments, and a distance between the two line segments is a line width of the line endpoint graph.
For the line endpoint graph, the step of performing initial optical proximity correction of at least one first movement amount for at least one line edge may specifically include:
and determining an initial value of the first movement amount, and adjusting the line width between two line segments included in the line edge of the line endpoint graph by taking the initial value as the current value of the first movement amount to finish the initial optical proximity correction of the line edge.
And determining a simulation graph of the line endpoint graph after the initial optical proximity correction is executed, and calculating the current edge position error of the simulation graph and the target graph.
Comparing the current edge position error with the first threshold, if the current edge position error is not smaller than the first threshold, taking the current edge position error as an input of a preset first movement amount calculation formula, taking an output of the preset first movement amount calculation formula as an initial value of a first movement amount of the line edge for executing the next initial optical proximity correction, and returning to execute the step of taking the initial value as a current value of the first movement amount to adjust the line width between two line segments included in the line edge of the line endpoint graph until the edge placement error of the line endpoint graph is smaller than the first threshold.
Further, the preset first movement amount calculation formula may specifically be:
wherein the saidFor the i-th execution of the first shift amount at the initial optical proximity correction, theIn order to complete the calculation of the edge position error after the i-1 th initial optical proximity correction, i is the number of times of executing the initial optical proximity correction, the value of i is 1, 2, 3, …, n, d1 is an adjustable parameter, and the value range of d1 is as follows: 0.5 to 0.9.
Further, the step of screening the concave area according to the target graph of the line endpoint graph and the first simulation graph may specifically include:
and a plurality of cutting points are respectively arranged on each line edge of the line endpoint graph, and the cutting points are correspondingly arranged on the corresponding positions of the first simulation graph and the target graph.
And aligning the first simulation graph with the target graph through the segmentation point, traversing the aligned first simulation graph and target graph, and screening out line edges and adjacent segmentation points of which the line width between two line segments on the first simulation graph is smaller than the line width between two line segments of the target graph at the same position.
And the closed area surrounded by the adjacent dividing points, the screened line edges and the intersection points of the line edges and the target graph is the concave area.
Further, the step of performing the target optical proximity correction of the second movement amount at least once on the line edge corresponding to the concave area on the line endpoint graph may specifically include:
and determining the edge position error of the line endpoint graph after the initial optical proximity correction is executed last time.
Substituting the edge position error and the area of the concave area into a preset second movement amount calculation formula to obtain a second movement amount of the line edge corresponding to the line end point graph for executing the current target optical proximity correction.
Determining a simulation graph of the line endpoint graph after the current target optical proximity correction is executed, taking the simulation graph as the first simulation graph, returning to execute the step of screening out a concave area of the first simulation graph compared with the target graph, and calculating the area of the concave area until the preset total correction iteration times are reached or the area of the concave area is smaller than the second threshold value.
Further, the preset second movement amount calculation formula may specifically be:
wherein the saidA second movement amount for executing the target optical proximity correction for the j th time, wherein j is the number of times of executing the target optical proximity correction, the j has values of i, i+1, i+2, … and n, j is the total number of preset correction iterations, and ∈>Is the area of the recessed area, said +.>For the first movement calculated after the last said initial optical correction has been performed, said +. >In order to form the segment length of the line segment corresponding to the adjacent segmentation point of the concave area on the target graph, the D is an adjustable parameter, and the value range of the D is as follows: 0.1 to 1.
Further, the optical proximity correction method provided in the embodiment of the present invention may further include:
if the area of the concave area is smaller than a second threshold value, judging whether the sum of the initial target optical proximity correction and the target optical proximity correction executed by the test layout reaches the preset total correction iteration times, and if so, taking the line endpoint graph after the final target optical proximity correction is executed as a plate making graph of a mask.
In a second aspect, based on the optical proximity correction method described above, the present invention further provides an optical proximity correction apparatus, which may specifically include: the manufacturing module is used for customizing a test layout corresponding to the prefabricated layout and a target graph of a line endpoint graph contained on the test layout, wherein the line endpoint graph is a closed graph formed by a plurality of line edges.
And the initial optical proximity correction module is used for carrying out initial optical proximity correction of at least one line edge by at least one first movement amount according to the line end point graph until the edge placement error of the line end point graph is smaller than a first threshold value.
And the area calculation module is used for screening out a concave area of the first simulation graph compared with the target graph according to the target graph of the line endpoint graph and the first simulation graph after the initial optical proximity correction is executed at least once, and calculating the area of the concave area.
And the target optical proximity correction module is used for executing target optical proximity correction of at least one second movement amount on the line edge corresponding to the line endpoint graph of the concave region if the area of the concave region is not smaller than a second threshold value until the preset correction iteration times are reached or the area of the concave region is smaller than the second threshold value.
In a third aspect, based on the optical proximity correction method described above, the embodiment of the present invention further provides a mask, which is characterized in that the mask is made based on the mask layout pattern obtained by the optical proximity correction method described above.
In a fourth aspect, based on the optical proximity correction method described above, the present invention further provides an electronic device, including a processor, a communication interface, a memory, and a communication bus, where the processor, the communication interface, and the memory complete communication with each other through the communication bus.
And a memory for storing a computer program.
And the processor is used for realizing the steps of the optical proximity correction method when executing the program stored in the memory.
Compared with the prior art, the technical scheme provided by the invention has at least one of the following beneficial effects:
the invention provides an optical proximity correction method, a device and an electronic device, which firstly carry out initial optical proximity correction of a plurality of first movement amounts on line endpoint patterns in a test layout until the edge position error of the line endpoint patterns is smaller than a first threshold value, then, a new evaluation function is introduced, namely, a concave area is constructed based on a first simulation pattern and a target pattern of the line endpoint patterns, then, the relation between the area of the concave pattern and a second threshold value is utilized to screen out the line edge of the line endpoint patterns with the pinch problem, and the line edge of the second movement amounts is shifted and adjusted, thereby obtaining unexpected effects that: the optical proximity correction of the two movement amounts is sequentially executed within the preset total number of correction iterations, and the target optical proximity correction of the second movement amount is determined based on a concave area surrounded by line edges of broken line end point patterns, so that the probability of broken line (pin) of a semiconductor structure formed by the line end point patterns on a mask plate on a silicon wafer can be effectively reduced, the precision and the efficiency of OPC correction are improved, and the risk of a semiconductor photoetching process is reduced.
In addition, the optical correction method provided by the invention also provides a specific mode for judging that the line edge is subjected to the ping break and a calculation formula of the second movement amount for the target optical proximity correction of the second movement amount of the line end point graph.
Drawings
FIG. 1 is a flow chart of an OPC correction method mainly used in the industry at present for line end point graphics included in a layout.
Fig. 2 is a schematic diagram of a structure in which the simulation pattern of the line end point pattern obtained after the prior art lithography simulation shown in fig. 1 has a problem of "open circuit" (pin) compared with the target pattern.
Fig. 3 is a flowchart of an optical proximity correction method according to an embodiment of the invention.
Fig. 4 is a schematic partial structure diagram of a recess region formed on a first dummy pattern and a target pattern of a line end pattern by using the method shown in fig. 3 according to an embodiment of the present invention.
Fig. 5 is a schematic structural diagram of an optical proximity correction device according to an embodiment of the invention.
Detailed Description
The mask, the optical proximity correction method, the optical proximity correction device and the electronic equipment provided by the invention are further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than as described herein, and therefore the present invention is not limited to the specific embodiments disclosed below.
As used in this application and in the claims, the terms "a," "an," "the," and/or "the" are not specific to the singular, but may include the plural, unless the context clearly dictates otherwise. In general, the terms "comprises" and "comprising" merely indicate that the steps and elements are explicitly identified, and they do not constitute an exclusive list, as other steps or elements may be included in a method or apparatus. In describing embodiments of the present invention in detail, the cross-sectional view of the device structure is not partially exaggerated to a general scale for convenience of explanation, and the schematic drawings are only examples and should not limit the scope of the present invention herein. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
Referring to fig. 1, fig. 1 is a flow chart of an OPC correction method mainly used in the industry at present for line endpoint graphics included in a layout.
As shown in fig. 1, in the conventional OPC correction method, when performing OPC correction on a line endpoint pattern on a mask, one or more line edges of the line endpoint pattern are moved (may be understood as being stretched) according to a preset line edge movement amount (generally referred to as a first movement amount in the embodiment of the present invention), so as to implement a first OPC correction on the line endpoint pattern by moving a line width between two line edges of the line endpoint pattern, then performing a photolithography simulation on the line endpoint pattern after performing the OPC correction to obtain a simulation pattern, then calculating a current Edge Position Error (EPE) of the line endpoint pattern by combining the simulation pattern and a target pattern of the line endpoint pattern, then multiplying the current edge position error by an adjustable parameter to obtain a line edge movement amount of the next OPC correction on the line endpoint pattern, and performing a second OPC correction on the line endpoint pattern, until a total number of times of OPC corrections performed on the line endpoint pattern reaches a preset total number of iterations.
However, due to unreasonable arrangement of the dividing points or the fact that the arrangement of the dividing points cannot take into account all positions of the line endpoint patterns, when the line endpoint patterns on the mask corrected by the existing OPC correction method form corresponding structures on the silicon wafer, the problem that a line edge is broken (pin) due to the fact that the line width between two line segments of the line edge is smaller than a target design value often occurs, as shown in fig. 2.
Therefore, how to eliminate or avoid the problem that the line width between two line segments of a line end point graph is smaller than the "open" of the line edge caused by the fact that the line width between two line segments of the line edge is smaller than the target design value relative to the target graph in the actual exposure process in the conventional OPC modifying method is not possible to avoid the unreasonable setting of the dividing points or the system defect that the setting of the dividing points cannot take into account all positions of the line end point graph, has become a technical problem which needs to be solved by those skilled in the art.
Therefore, after the line edge shift adjustment of the first movement amount is performed on the line endpoint graph based on the existing OPC correction method, a new evaluation function is introduced, namely, a concave area is constructed based on the first simulation graph and the target graph of the line endpoint graph, then the line edge of the line endpoint graph, which is possibly subjected to the pinch problem, is screened out by utilizing the relation between the area of the concave graph and the second threshold value, and the line edge shift adjustment of the second movement amount is performed on the line endpoint graph, so that the probability of 'open circuit' (pinch) of a semiconductor structure formed on a silicon wafer by the line endpoint graph on a mask plate is effectively reduced, the accuracy and the efficiency of OPC correction are improved, and the aim of reducing the risk of a semiconductor photoetching process is finally achieved.
In order to distinguish between the line edge shift adjustment of the first shift amount and the line edge shift adjustment of the second shift amount performed on the line end point pattern, the line edge shift adjustment of the first shift amount performed on the line end point pattern is referred to as initial optical proximity correction, and the line edge shift adjustment of the second shift amount performed on the line end point pattern is referred to as target optical proximity correction.
Referring to fig. 3, fig. 3 is a schematic flow chart of an optical proximity correction method according to an embodiment of the present invention, and as shown in fig. 3, the optical proximity correction method according to the embodiment of the present invention may specifically include the following steps:
step S301, determining a test layout corresponding to the prefabricated layout and a target graph of the line endpoint graph contained on the test layout.
In this embodiment, the corresponding test layout may be determined according to the pre-fabricated layout. The test layout may include a plurality of line endpoint patterns, where the line endpoint patterns are usually closed patterns formed by a plurality of line edges, and each line edge may be divided into 2 line segments according to the line shape actually constructed by the line endpoint patterns, as shown in fig. 2, the line endpoint patterns may include line edges 1, 2, 3 and 4, and the line edge 4 may be specifically divided into two line segments 4a and 4b. As an example, all line edges where the ping break problem occurs in the embodiment of the present invention are combined by two line segments.
In addition, the target graph of the line endpoint graph is a graph corresponding to the line endpoint graph when the line width of the line endpoint graph is a target design value.
Step S302, performing initial optical proximity correction of at least one first movement amount on at least one line edge for the line end point pattern until an edge placement error of the line end point pattern is smaller than a first threshold.
In this embodiment, after the line endpoint pattern in the test layout is obtained in the step S301, the line edge shift adjustment of the first movement amount is performed on the line endpoint pattern for a plurality of times, that is, the initial optical proximity correction, and after the line endpoint pattern reaches a certain requirement after the initial optical proximity correction of the first movement amount for a plurality of times, the target optical proximity correction process in the following steps S303 and S304 may be performed.
As a preferred example, the embodiment of the present invention provides an implementation manner of performing initial optical proximity correction of multiple first movement amounts on one or more line edges of a certain line endpoint graph on the test layout, which specifically includes the following steps:
firstly, determining an initial value of the first movement amount, and adjusting the line width between two line segments included in a line edge of the line endpoint graph by taking the initial value as a current value of the first movement amount to finish the initial optical proximity correction of the line edge.
And secondly, determining a simulation graph of the line endpoint graph after the initial optical proximity correction is executed, and calculating the edge position error of the simulation graph and the target graph.
And finally, comparing the current edge position error with the first threshold, if the current edge position error is not smaller than the first threshold, taking the current edge position error as input of a preset first movement amount calculation formula, taking output of the preset first movement amount calculation formula as an initial value of a first movement amount of the initial optical proximity correction performed next time by the line edge, and returning to execute the step of taking the initial value as a current value of the first movement amount to adjust the line width between two line segments included by the line edge of the line endpoint graph until the edge placement error of the line endpoint graph is smaller than the first threshold.
In general, in the process of performing OPC correction on each line endpoint pattern in the test layout, a preset total number of correction iterations is set in advance, and in this embodiment, the preset total number of correction iterations is the sum of the number of initial optical proximity corrections performed on the line endpoint pattern and the number of target optical proximity corrections, so the optical proximity correction method provided in the embodiment of the present invention is different from the prior art in that: in the prior art, after the line endpoint graph performs initial optical proximity correction with a plurality of first movement amounts (the preset total correction iteration times are not reached at this time), although the edge position error at this time is smaller than the first threshold value, the line endpoint graph still needs to perform initial optical proximity correction with a plurality of first movement amounts until the preset total correction iteration times are reached, and after the edge position error after the plurality of initial optical proximity correction is smaller than the first threshold value, the line edge with the pinch problem is screened, and the line edge with a second movement amount is further shifted, namely the target optical proximity correction.
Obviously, the optical proximity correction method provided by the embodiment of the invention not only can effectively reduce the probability of breaking a semiconductor structure formed by a line endpoint pattern on a mask on a silicon wafer, but also can improve the accuracy and efficiency of OPC correction.
As a preferable example, the preset first movement amount calculation formula is:
（1）
wherein the saidFor the i-th execution of the first shift amount at the initial optical proximity correction, theIn order to complete the calculation of the edge position error after the i-1 th initial optical proximity correction, i is the number of times of executing the initial optical proximity correction, the value of i is 1, 2, 3, …, n, d1 is an adjustable parameter, and the value range of d1 is as follows: 0.5 to 0.9.
Step S303, screening out a concave area of the first simulation pattern compared with the target pattern according to the target pattern of the line endpoint pattern and the first simulation pattern after the initial optical proximity correction is executed at least once, and calculating the area of the concave area.
In this embodiment, after the line endpoint pattern on the test layout is executed for multiple times with the initial optical proximity correction, the line endpoint pattern may be subjected to lithography simulation based on the layout pattern of the last (last) initial optical proximity correction executed by the line endpoint pattern, so as to obtain a first simulation pattern of the line endpoint pattern, determine a line edge of the line endpoint pattern, where a pin open circuit may occur, based on the first simulation pattern and the target pattern, and then enclose a concave area with the target pattern based on the line edge (located on the first simulation pattern), thereby implementing the purpose of using the constructed concave area to characterize the specific position of the line endpoint pattern, where the pin open circuit problem may occur. Thereafter, the shift adjustment is performed using the second movement amount set forth in the embodiment of the present invention.
As a preferred example, the embodiment of the present invention provides a step of screening the concave area according to the target pattern of the line endpoint pattern and the first simulation pattern, including:
firstly, a plurality of cutting points are respectively arranged on each line edge of the line endpoint graph, and the cutting points are correspondingly arranged on the corresponding positions of the first simulation graph and the target graph.
Secondly, aligning the first simulation graph with the target graph through the dividing points, traversing the aligned first simulation graph and target graph, and screening out line edges and adjacent dividing points, wherein the line width between two line segments on the first simulation graph is smaller than the line width between two line segments of the target graph at the same position.
And then, the closed area surrounded by the adjacent dividing points, the screened line edges and the intersection points of the line edges and the target graph is the concave area.
Referring to fig. 4, fig. 4 is a schematic diagram of a partial structure of a recess Area formed on a first simulation pattern of a line endpoint pattern and a target pattern by using the method described in fig. 3 according to an embodiment of the present invention, in the embodiment of the present invention, when the recess Area is constructed, a plurality of cut-off points are first required to be respectively set on each line edge of the line endpoint pattern on the test layout, and the set cut-off points will not disappear in the process of photoetching simulation of the line endpoint pattern and drawing the target pattern, so that in the process of aligning the first simulation pattern S1 of the line endpoint pattern and the target pattern S2 thereof, the cut-off points at corresponding positions on the first simulation pattern S1 and the target pattern S2 are overlapped one by one, as shown in fig. 4, and then, line edges where the line width of the first simulation pattern S1 is smaller than the line width of the target pattern S2 (where pin occurs) are found, and the Area of the first simulation pattern is subtracted from the Area of the first simulation pattern at the line edges, i.e. the recess Area.
Step S304, if the area of the concave area is not smaller than the second threshold, performing at least one second movement amount of the target optical proximity correction on the line edge corresponding to the concave area on the line end point graph until the total number of preset correction iterations is reached or the area of the concave area is smaller than the second threshold.
In this embodiment, if the area of the concave area is calculated to be not smaller than the second threshold, it may be determined that the edge position error of the line endpoint pattern after the initial optical proximity correction is performed last time; then substituting the edge position error and the Area of the concave Area into the preset second movement amount calculation formula to obtain a second movement amount for executing the current target optical proximity correction on the line edge corresponding to the line endpoint graph; then determining a simulation graph of the line endpoint graph after the current target optical proximity correction is executed, taking the simulation graph as the first simulation graph, and returning to execute the step of screening out a concave area of the first simulation graph compared with the target graph and calculating the area of the concave area until the total number of preset correction iterations is reached or the area of the concave area is smaller than the second threshold value; if the area of the concave area is smaller than a second threshold value, judging whether the sum of the initial target optical proximity correction and the target optical proximity correction executed by the test layout reaches the preset total correction iteration times, and if so, taking the line endpoint graph after the final target optical proximity correction is executed as a plate making graph of a mask.
As a preferable example, the preset second movement amount calculation formula is:
（2）
wherein the saidFor the j-th execution of the second movement amount of the target optical proximity correction, j is the number of execution times of the target optical proximity correction, the j has the values of i, i+1, i+2, …, n is the total number of preset correction iterations, and ∈j is the total number of preset correction iterations->Area of the recessed regionSaid->For the first movement calculated after the last said initial optical correction has been performed, said +.>In order to form the segment length of the line segment corresponding to the adjacent segmentation point of the concave area on the target graph, the D is an adjustable parameter, and the value range of the D is as follows: 0.1 to 1.
Based on the above-mentioned optical proximity correction method, the present embodiment further provides an optical proximity correction device, and referring to fig. 5, fig. 5 is a schematic structural diagram of an optical proximity correction device according to an embodiment of the present invention, where the device includes:
the manufacturing module 510 is configured to determine a test layout corresponding to the prefabricated layout and a target graphic of a line endpoint graphic included in the test layout, where the line endpoint graphic is a closed graphic composed of a plurality of line edges.
The initial optical proximity correction module 520 is configured to perform initial optical proximity correction of at least one line edge by at least one first movement amount for the line end point pattern until an edge placement error of the line end point pattern is less than a first threshold.
The area calculation module 530 is configured to screen a concave area of the first simulation pattern compared with the target pattern according to the target pattern of the line endpoint pattern and the first simulation pattern after the initial optical proximity correction is performed at least once, and calculate an area of the concave area.
And the target optical proximity correction module 540 is configured to execute target optical proximity correction of at least one second movement amount on the line edge corresponding to the line end point pattern of the concave region if the area of the concave region is not less than a second threshold value, until a preset correction iteration number is reached or the area of the concave region is less than the second threshold value.
In summary, the initial optical proximity correction of the first movement amount is performed on the line endpoint pattern in the test layout for multiple times until the edge position error of the line endpoint pattern is smaller than the first threshold value, then a new evaluation function is introduced, namely, a concave area is constructed based on the first simulation pattern and the target pattern of the line endpoint pattern, and then the relation between the area of the concave pattern and the second threshold value is utilized to screen out the line edge of the pinch problem of the line endpoint pattern, and the line edge of the second movement amount is subjected to line edge displacement adjustment, so that unexpected effects are obtained: the optical proximity correction of the two movement amounts is sequentially executed within the preset total number of correction iterations, and the target optical proximity correction of the second movement amount is determined based on a concave area surrounded by line edges of broken line end point patterns, so that the probability of broken line (pin) of a semiconductor structure formed by the line end point patterns on a mask plate on a silicon wafer can be effectively reduced, the precision and the efficiency of OPC correction are improved, and the risk of a semiconductor photoetching process is reduced.
In addition, the optical correction method provided by the invention also provides a specific mode for judging that the line edge is subjected to the ping break and a calculation formula of the second movement amount for the target optical proximity correction of the second movement amount of the line end point graph.
The embodiment of the invention also provides an electronic device, which comprises a processor, a communication interface, a memory and a communication bus, wherein the processor, the communication interface and the memory are communicated with each other through the communication bus,
a memory for storing a computer program;
and the processor is used for realizing the optical proximity correction method provided by the embodiment of the invention when executing the program stored in the memory.
In addition, other implementations of the optical proximity correction method implemented by the processor executing the program stored in the memory are the same as those mentioned in the foregoing method embodiment, and will not be described herein again.
The communication bus mentioned by the control terminal may be a peripheral component interconnect standard (Peripheral Component Interconnect, PCI) bus or an extended industry standard architecture (Extended Industry Standard Architecture, EISA) bus, etc. The communication bus may be classified as an address bus, a data bus, a control bus, or the like. For ease of illustration, the figures are shown with only one bold line, but not with only one bus or one type of bus.
The communication interface is used for communication between the electronic device and other devices.
The Memory may include random access Memory (Random Access Memory, RAM) or may include Non-Volatile Memory (NVM), such as at least one disk Memory. Optionally, the memory may also be at least one memory device located remotely from the aforementioned processor.
The processor may be a general-purpose processor, including a central processing unit (Central Processing Unit, CPU), a network processor (Network Processor, NP), etc.; but also digital signal processors (Digital Signal Processing, DSP), application specific integrated circuits (Application Specific Integrated Circuit, ASIC), field programmable gate arrays (Field-Programmable Gate Array, FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components.
In yet another embodiment of the present invention, a computer readable storage medium is provided, in which instructions are stored, which when executed on a computer, cause the computer to perform the optical proximity correction method according to any one of the above embodiments.
In the above embodiments, it may be implemented in whole or in part by software, hardware, firmware, or any combination thereof. When implemented in software, may be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When loaded and executed on a computer, produces a flow or function in accordance with embodiments of the present invention, in whole or in part. The computer may be a general purpose computer, a special purpose computer, a computer network, or other programmable apparatus. The computer instructions may be stored in or transmitted from one computer-readable storage medium to another, for example, by wired (e.g., coaxial cable, optical fiber, digital Subscriber Line (DSL)), or wireless (e.g., infrared, wireless, microwave, etc.). The computer readable storage medium may be any available medium that can be accessed by a computer or a data storage device such as a server, data center, etc. that contains an integration of one or more available media. The usable medium may be a magnetic medium (e.g., floppy Disk, hard Disk, magnetic tape), an optical medium (e.g., DVD), or a semiconductor medium (e.g., solid State Disk (SSD)), etc.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
In this specification, each embodiment is described in a related manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment mainly describes differences from other embodiments. In particular, for apparatus, electronic devices, and computer-readable storage medium embodiments, the description is relatively simple, as it is substantially similar to method embodiments, with reference to portions of the description of method embodiments being relevant.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.
Claims (7)
1. An optical proximity correction method, comprising:
determining a test layout corresponding to a prefabricated layout and a target graph of a line endpoint graph contained in the test layout, wherein the line endpoint graph is a closed graph formed by a plurality of line edges;
performing initial optical proximity correction of at least one line edge by a first movement amount for the line end point graph until the edge placement error of the line end point graph is smaller than a first threshold;
screening a concave area of the first simulation graph compared with the target graph according to the target graph of the line endpoint graph and the first simulation graph after the initial optical proximity correction is executed at least once, and calculating the area of the concave area;
if the area of the concave area is not smaller than a second threshold value, performing target optical proximity correction of at least one second movement amount on the line edge corresponding to the concave area on the line endpoint graph until the preset total correction iteration times are reached or the area of the concave area is smaller than the second threshold value;
Specifically, the step of screening the concave area according to the target graph of the line endpoint graph and the first simulation graph includes:
a plurality of cutting points are respectively arranged on each line edge of the line endpoint graph, and the cutting points are correspondingly arranged on the corresponding positions of the first simulation graph and the target graph; aligning the first simulation graph with the target graph through the segmentation point, traversing the aligned first simulation graph and target graph, and screening out line edges and adjacent segmentation points, wherein the line width between two line segments on the first simulation graph is smaller than the line width between two line segments of the target graph at the same position; the closed area surrounded by the adjacent cutting points, the screened line edges and the intersection points of the line edges and the target graph is the concave area;
and the step of performing the target optical proximity correction of at least one second movement amount on the line edge corresponding to the concave region on the line endpoint graph comprises the following steps:
determining the edge position error of the line endpoint graph after the initial optical proximity correction is executed for the last time; substituting the edge position error and the area of the concave area into a preset second movement amount calculation formula to obtain a second movement amount of the line edge corresponding to the line endpoint graph for executing the current target optical proximity correction; determining a simulation graph of the line endpoint graph after the current target optical proximity correction is executed, taking the simulation graph as the first simulation graph, returning to execute the step of screening out a concave area of the first simulation graph compared with the target graph, and calculating the area of the concave area until the preset total correction iteration number is reached or the area of the concave area is smaller than the second threshold value, wherein the preset second movement amount calculation formula is as follows:
Wherein the saidA second movement amount for executing the target optical proximity correction for the j th time, wherein j is the number of times of executing the target optical proximity correction, the j has values of i, i+1, i+2, … and n, j is the total number of preset correction iterations, and ∈>Is the area of the recessed area, said +.>For the first movement calculated after the last said initial optical correction has been performed, said +.>In order to form the segment length of the line segment corresponding to the adjacent segmentation point of the concave area on the target graph, the D is an adjustable parameter, and the value range of the D is as follows: 0.1 to 1.
2. The optical proximity correction method of claim 1, wherein the line edge is composed of two line segments, and a distance between the two line segments is a line width of the line endpoint graph;
for the line endpoint graph, performing initial optical proximity correction of at least one first movement amount for at least one line edge, including:
determining an initial value of the first movement amount, and adjusting the line width between two line segments included in the line edge of the line endpoint graph by taking the initial value as the current value of the first movement amount to finish the initial optical proximity correction of the line edge;
Determining a simulation graph of the line endpoint graph after the initial optical proximity correction is executed, and calculating the current edge position error of the simulation graph and the target graph;
comparing the current edge position error with the first threshold, if the current edge position error is not smaller than the first threshold, taking the current edge position error as an input of a preset first movement amount calculation formula, taking an output of the preset first movement amount calculation formula as an initial value of a first movement amount of the line edge for executing the next initial optical proximity correction, and returning to execute the step of taking the initial value as a current value of the first movement amount to adjust the line width between two line segments included in the line edge of the line endpoint graph until the edge placement error of the line endpoint graph is smaller than the first threshold.
3. The optical proximity correction method of claim 2, wherein the preset first shift amount calculation formula is:
Mask1(i)=-EPE(i-1)×d1
the Mask1 (i) is a first movement amount when the initial optical proximity correction is executed for the ith time, the EPE (i-1) is an edge position error calculated after the initial optical proximity correction is executed for the ith-1 time, i is the number of times of executing the initial optical proximity correction, the value of i is 1, 2, 3, …, n, d1 is an adjustable parameter, and the value range of d1 is: 0.5 to 0.9.
4. The optical proximity correction method of claim 1, further comprising:
if the area of the concave area is smaller than a second threshold value, judging whether the sum of the times of the initial optical proximity correction and the target optical proximity correction executed by the test layout reaches the preset total number of correction iterations, and if so, taking the line endpoint graph after the last execution of the target optical proximity correction as a plate making graph of a mask.
5. An optical proximity correction device, comprising:
the manufacturing module is used for determining a test layout corresponding to the prefabricated layout and a target graph of a line endpoint graph contained on the test layout, wherein the line endpoint graph is a closed graph formed by a plurality of line edges;
the initial optical proximity correction module is used for carrying out initial optical proximity correction of at least one line edge by at least one first movement amount according to the line end point graph until the edge placement error of the line end point graph is smaller than a first threshold value;
the area calculation module is used for screening a concave area of the first simulation graph compared with the target graph according to the target graph of the line endpoint graph and the first simulation graph after the initial optical proximity correction is executed at least once, and calculating the area of the concave area;
The target optical proximity correction module is used for executing target optical proximity correction of at least one second movement amount on the line edge corresponding to the line endpoint graph of the concave region if the area of the concave region is not smaller than a second threshold value until the preset correction iteration number is reached or the area of the concave region is smaller than the second threshold value;
specifically, the area calculation module is specifically configured to:
a plurality of cutting points are respectively arranged on each line edge of the line endpoint graph, and the cutting points are correspondingly arranged on the corresponding positions of the first simulation graph and the target graph; aligning the first simulation graph with the target graph through the segmentation point, traversing the aligned first simulation graph and target graph, and screening out line edges and adjacent segmentation points, wherein the line width between two line segments on the first simulation graph is smaller than the line width between two line segments of the target graph at the same position; the closed area surrounded by the adjacent cutting points, the screened line edges and the intersection points of the line edges and the target graph is the concave area;
The target optical proximity correction module is specifically configured to:
determining the edge position error of the line endpoint graph after the initial optical proximity correction is executed for the last time; substituting the edge position error and the area of the concave area into a preset second movement amount calculation formula to obtain a second movement amount of the line edge corresponding to the line endpoint graph for executing the current target optical proximity correction; determining a simulation graph of the line endpoint graph after the current target optical proximity correction is executed, taking the simulation graph as the first simulation graph, returning to execute the step of screening out a concave area of the first simulation graph compared with the target graph, and calculating the area of the concave area until the preset total correction iteration number is reached or the area of the concave area is smaller than the second threshold value, wherein the preset second movement amount calculation formula is as follows:
wherein the saidA second movement amount for executing the target optical proximity correction for the j th time, wherein j is the number of times of executing the target optical proximity correction, the j has values of i, i+1, i+2, … and n, j is the total number of preset correction iterations, and ∈ >Is the area of the recessed area, said +.>For the first movement calculated after the last said initial optical correction has been performed, said +.>In order to form the segment length of the line segment corresponding to the adjacent segmentation point of the concave area on the target graph, the D is an adjustable parameter, and the value range of the D is as follows: 0.1 to 1.
6. A mask is characterized in that the mask is made based on a mask layout graph obtained by the optical proximity correction method according to any one of claims 1-4.
7. The electronic equipment is characterized by comprising a processor, a communication interface, a memory and a communication bus, wherein the processor, the communication interface and the memory are communicated with each other through the communication bus;
a memory for storing a computer program;
a processor for implementing the optical proximity correction method of any one of claims 1-4 when executing a program stored on a memory.
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101334586A (en) * | 2007-06-26 | 2008-12-31 | 东部高科股份有限公司 | Method of manufacturing mask for semiconductor device |
| CN101349863A (en) * | 2008-08-19 | 2009-01-21 | 浙江大学 | Method for correcting optical approach effect of polygon rim dynamic cutting by configuration sampling |
| CN105159026A (en) * | 2015-07-29 | 2015-12-16 | 上海华力微电子有限公司 | Optical proximity correction validation method of gate region |
| CN108073047A (en) * | 2016-11-15 | 2018-05-25 | 无锡华润上华科技有限公司 | Method for correcting optical approach effect and system |
| US10310372B1 (en) * | 2017-02-27 | 2019-06-04 | Cadence Design Systems, Inc. | Full-chip hierarchical inverse lithography |
| CN110456617A (en) * | 2019-08-26 | 2019-11-15 | 上海华力集成电路制造有限公司 | Optical proximity effect modification method and its update the system |
| CN115480441A (en) * | 2021-05-31 | 2022-12-16 | 无锡华润上华科技有限公司 | Optical proximity correction method, mask, readable storage medium and computer device |
| CN115509081A (en) * | 2021-06-22 | 2022-12-23 | 无锡华润上华科技有限公司 | Optical proximity correction method, mask and readable storage medium |
| WO2023115611A1 (en) * | 2021-12-23 | 2023-06-29 | 中国科学院光电技术研究所 | Level set algorithm based reverse optical proximity effect correction method for super-resolution lithography |
| CN116482930A (en) * | 2023-04-28 | 2023-07-25 | 上海华力微电子有限公司 | OPC correction method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7043712B2 (en) * | 2003-09-09 | 2006-05-09 | International Business Machines Corporation | Method for adaptive segment refinement in optical proximity correction |
| US8494996B2 (en) * | 2010-06-23 | 2013-07-23 | International Business Machines Corporation | Creation and revision of network object graph topology for a network performance management system |
-
2023
- 2023-12-05 CN CN202311648783.XA patent/CN117348333B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101334586A (en) * | 2007-06-26 | 2008-12-31 | 东部高科股份有限公司 | Method of manufacturing mask for semiconductor device |
| CN101349863A (en) * | 2008-08-19 | 2009-01-21 | 浙江大学 | Method for correcting optical approach effect of polygon rim dynamic cutting by configuration sampling |
| CN105159026A (en) * | 2015-07-29 | 2015-12-16 | 上海华力微电子有限公司 | Optical proximity correction validation method of gate region |
| CN108073047A (en) * | 2016-11-15 | 2018-05-25 | 无锡华润上华科技有限公司 | Method for correcting optical approach effect and system |
| US10310372B1 (en) * | 2017-02-27 | 2019-06-04 | Cadence Design Systems, Inc. | Full-chip hierarchical inverse lithography |
| CN110456617A (en) * | 2019-08-26 | 2019-11-15 | 上海华力集成电路制造有限公司 | Optical proximity effect modification method and its update the system |
| CN115480441A (en) * | 2021-05-31 | 2022-12-16 | 无锡华润上华科技有限公司 | Optical proximity correction method, mask, readable storage medium and computer device |
| CN115509081A (en) * | 2021-06-22 | 2022-12-23 | 无锡华润上华科技有限公司 | Optical proximity correction method, mask and readable storage medium |
| WO2023115611A1 (en) * | 2021-12-23 | 2023-06-29 | 中国科学院光电技术研究所 | Level set algorithm based reverse optical proximity effect correction method for super-resolution lithography |
| CN116482930A (en) * | 2023-04-28 | 2023-07-25 | 上海华力微电子有限公司 | OPC correction method |
Non-Patent Citations (1)
| Title |
|---|
| 光学邻近效应矫正(OPC)技术及其应用;蔡懿慈等;中国科学(E辑:信息科学);20071215;第37卷(第12期);全文 * |
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