CN112904662B - Auxiliary graph adding method and device and test layout - Google Patents
Auxiliary graph adding method and device and test layout Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 114
- 238000012360 testing method Methods 0.000 title claims abstract description 69
- 230000008569 process Effects 0.000 claims abstract description 58
- 238000001259 photo etching Methods 0.000 claims abstract description 28
- 238000001459 lithography Methods 0.000 claims description 14
- 230000003247 decreasing effect Effects 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 abstract description 9
- 238000012937 correction Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000004891 communication Methods 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 6
- 238000003860 storage Methods 0.000 description 5
- 238000004590 computer program Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
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Abstract
The invention provides an auxiliary graph adding method, an auxiliary graph adding device and a test layout, and is applied to the technical field of semiconductors. According to the auxiliary graph adding method provided by the invention, the corner area formed by the peripheral areas of two adjacent main graphs which are arranged in a staggered mode is determined, then the corner area to be processed, which is required to be added with the L-shaped auxiliary graph provided by the invention, is identified in the corner area, and the L-shaped auxiliary graph is added in the corner area to be processed, so that the problem that in the prior art, because the auxiliary graph needs to be added to each main graph in the corner area, a plurality of added auxiliary graphs conflict and the main graph process window is low is solved. Therefore, the adding method of the auxiliary graph improves the photoetching process window of the layout, improves the accuracy in the OPC correction process and effectively improves the product yield.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an auxiliary graph adding method and device and a test layout.
Background
With the development of the semiconductor industry, requirements for performance and energy consumption of chips are more and more demanding, and in order to obtain chips with smaller area, higher performance and lower energy consumption, the size of each pattern on the chip and the distance between the patterns need to be further reduced, and the reduction of the distance can cause the design distance between some patterns on the layout to be smaller than the optical wavelength. Therefore, the layout needs to be corrected before the layout is imprinted on the reticle, so as to prevent Optical Proximity Effect (OPE) from being generated in the photolithography process, and avoid the distortion of the pattern caused by the inconsistency between the pattern imprinted on the chip and the design.
A technique for correcting the layout in order to avoid the Optical proximity effect is an Optical Proximity Correction (OPC) technique. Sub-resolution assist Feature (SRAF) is an OPC scheme that is widely used. Specifically, the fine patterns are added around the sparse patterns in the integrated circuit design layout, so that the sparse patterns look like dense patterns in an optical perspective, the fine patterns must be smaller than the resolution of a photoetching machine, and the patterns only scatter light and cannot be transferred onto a photoresist during exposure, so that the patterns are called sub-resolution auxiliary patterns (SRAF) or Scattering bars (Scattering bars). In the SRAF technology, the sub-resolution auxiliary graph is added near the main graph of the layout, so that the isolated graph and the sparse graph have the characteristic of a dense graph, the light intensity distribution is improved, and the imaging quality is improved. The line width of the sub-resolution auxiliary graph is small, and the light intensity value of diffracted light at the sub-resolution auxiliary graph is smaller than the photosensitive threshold value of photoresist on a substrate (such as a silicon wafer), so that the sub-resolution auxiliary graph cannot be imaged, and after the sub-resolution auxiliary graph is added in a layout, the graph of the original line can be formed on the substrate. The layout is corrected by the SRAF technology, so that the pattern resolution of the photoetching process can be effectively improved, the process window is enlarged, and the product yield is improved.
Currently, the auxiliary pattern adding method includes a rule-based adding method, a model-based adding method, an inverse lithography calculation-based adding method, and the like. The auxiliary patterns added based on the rules have certain constraint conditions, so that the auxiliary patterns added on the periphery of part of the main patterns are unreasonably distributed, the layout photoetching process window is too low, and the yield of the whole chip is influenced. For example, for a layout containing a plurality of main patterns each in a regular quadrangle, the existing method for adding auxiliary patterns based on rules is to add at least one auxiliary pattern with a constant width and position between any two edges of two adjacent main patterns.
However, since the peripheral region between two adjacent main patterns in the layout may constitute a structural region of a special shape, such as a corner region, a sector region, etc., if the conventional rule-based auxiliary pattern adding method is used, the sub-resolution auxiliary patterns added for a plurality of main patterns in such a special region have an intersection with each other, are likely to collide with each other, and cannot be simply merged. In order to solve this problem, it is a conventional practice to delete part of the auxiliary graphics in the special area according to a certain adjustment rule. However, the existing method for simply deleting part of the auxiliary patterns in the special area can cause the addition of the auxiliary patterns in the area to be incomplete, thereby reducing the photoetching process window of the main patterns and the layout and influencing the product yield.
Disclosure of Invention
The invention aims to provide an auxiliary graph adding method and device and a test layout so as to improve the process window of the layout and increase the stability of a product.
In a first aspect, to solve the above technical problem, the present invention provides an auxiliary graph adding method, including:
determining a test layout corresponding to a prefabricated layout, wherein the test layout is provided with a plurality of main patterns, and at least two adjacent main patterns in the test layout are arranged in a staggered manner to form a corresponding corner region;
identifying corner regions needing to be added with first auxiliary patterns from all corner regions of the test layout as corner regions to be processed;
and adding an L-shaped first auxiliary graph in each corner area to be processed, wherein after the first auxiliary graph is added, the simulated photoetching process window of each main graph forming the corner area to be processed can reach a preset target value.
Optionally, the method for adding the auxiliary graphic may further include:
after the test layout corresponding to the prefabricated layout is determined and before all corner regions needing to be added with the auxiliary patterns in the test layout are determined, adding a second auxiliary pattern in a linear or grating type at the periphery of the corresponding main pattern in the test layout according to a preset auxiliary pattern adding rule;
identifying corner regions with incomplete addition of second auxiliary patterns from all corner regions of the test layout, and using the corner regions as corner regions needing to be added with first auxiliary patterns to obtain the corner regions to be processed; and the number of the first and second groups,
replacing the incomplete second auxiliary graph with the first auxiliary graph in each corner region to be processed to add the first auxiliary graph in an L shape in each corner region to be processed.
Optionally, for each corner region to be processed, the line width of each added first auxiliary pattern is greater than the line width of the corresponding complete second auxiliary pattern, and the distance from the first auxiliary pattern to each main pattern forming the corner region to be processed is equal to or less than the distance from the original incomplete second auxiliary pattern in the corner region to be processed to each main pattern forming the corner region to be processed.
Optionally, the distance from the first auxiliary pattern added in each corner region to the main pattern forming the corner region to be processed may be the same.
Optionally, the step of adding the first auxiliary pattern in an L shape in each corner region to be processed may include:
adding a first auxiliary graph with an initial width in each corner area to be processed;
judging whether the simulated photoetching process windows of the main patterns forming each corner area to be processed can reach a preset target value after the first auxiliary patterns with the initial width are added, and judging whether each added first auxiliary pattern has exposure risk;
if the simulated photoetching process window of any main pattern forming a certain corner region to be processed does not meet a preset target value and/or the first auxiliary pattern added in the corner region to be processed has exposure risk, increasing or decreasing the width of the first auxiliary pattern added in the corner region to be processed until the simulated photoetching process window of each main pattern forming the corner region to be processed meets the preset target value and the first auxiliary pattern added in the corner region to be processed has no exposure risk.
In a second aspect, based on the auxiliary graphic adding method, the present invention further provides an auxiliary graphic adding apparatus, including:
the device comprises a test layout determining module, a pre-manufacturing module and a processing module, wherein the test layout determining module is used for determining a test layout corresponding to a pre-manufactured layout, the test layout is provided with a plurality of main patterns, and at least two adjacent main patterns in the test layout are arranged in a staggered manner to form a corresponding corner area;
the first corner region to be processed determining module is used for identifying corner regions needing to be added with first auxiliary patterns from all corner regions of the test layout as corner regions to be processed;
and the first auxiliary graph adding module is used for adding an L-shaped first auxiliary graph in each corner area to be processed, and after the first auxiliary graph is added, the simulated photoetching process window of each main graph forming the corner area to be processed can reach a preset target value.
Optionally, the adding device may further include:
the second auxiliary graph adding module is used for adding a second auxiliary graph which is linear or grating on the periphery of the corresponding main graph in the test layout according to a preset auxiliary graph adding rule after the test layout corresponding to the prefabricated layout is determined and before all the corner regions needing to be added with the auxiliary graphs in the test layout are determined;
a second corner region to be processed determining module, configured to identify a corner region where a second auxiliary pattern is added incompletely from all corner regions of the test layout, where the corner region where a first auxiliary pattern needs to be added is used to obtain the corner region to be processed; and replacing the incomplete second auxiliary graph with the first auxiliary graph in each corner region to be processed so as to add the first auxiliary graph in an L shape in each corner region to be processed.
Optionally, the first auxiliary graphics adding module may include:
a first adding unit, configured to add a first auxiliary pattern having an initial width in each of the corner regions to be processed;
a judging unit, configured to judge whether a simulated lithography process window of each main pattern forming each corner region to be processed reaches a preset target value after the first auxiliary pattern with the initial width is added, and judge whether each added first auxiliary pattern has an exposure risk;
a second adding unit, configured to increase or decrease the width of the first auxiliary pattern added in the corner region to be processed, if the simulated lithography process window of any one of the main patterns forming a certain corner region to be processed does not meet a preset target value and/or the first auxiliary pattern added in the corner region to be processed has an exposure risk, until the simulated lithography process window of each main pattern forming the corner region to be processed meets the preset target value and the first auxiliary pattern added in the corner region to be processed has no exposure risk.
In a third aspect, based on the above method for adding an auxiliary pattern, the present invention further provides a test layout, including:
the main patterns are arranged in a staggered mode to form corresponding corner regions;
a plurality of second auxiliary graphs which are linear or grating and are arranged at the periphery of the corresponding main graph;
and the addition of the first auxiliary pattern can enable the simulated photoetching process window of each main pattern forming the corner region to reach a preset target value.
Optionally, the line width of the first auxiliary pattern is greater than the line width of the second auxiliary pattern, and for the corner region where the first auxiliary pattern is disposed, the distance from the first auxiliary pattern to each of the main patterns forming the corner region is the same.
In a fourth aspect, based on the above auxiliary graph adding method, the present invention further provides an electronic device, including a processor, a communication interface, a memory and a communication bus, where the processor, the communication interface, and the memory complete mutual communication through the communication bus;
a memory for storing a computer program;
and a processor for implementing the steps of the auxiliary graphics adding method as described above when executing the program stored in the memory.
Compared with the prior art, the technical scheme provided by the invention has at least one of the following beneficial effects:
the invention provides an auxiliary graph adding method and device and a test layout. According to the auxiliary graph adding method provided by the invention, the corner area formed by the peripheral areas of two adjacent main graphs which are arranged in a staggered mode is determined, then the corner area to be processed, which is required to be added with the L-shaped auxiliary graph provided by the invention, is identified in the corner area, and the L-shaped auxiliary graph is added in the corner area to be processed, so that the problem that in the prior art, because the auxiliary graph needs to be added to each main graph in the corner area, a plurality of added auxiliary graphs conflict and the main graph process window is low is solved. Therefore, the adding method of the auxiliary graph improves the photoetching process window of the layout, improves the accuracy in the OPC correction process and effectively improves the product yield.
Drawings
Fig. 1 is a flowchart illustrating an auxiliary pattern adding method according to an embodiment of the present invention.
Fig. 2 is a schematic layout diagram of a plurality of main patterns in a test layout provided in an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of adding a first auxiliary pattern to the corner region to be processed in the test layout corresponding to fig. 2.
Fig. 4 is a schematic structural diagram of an auxiliary pattern adding apparatus according to an embodiment of the present invention.
Detailed Description
The following describes in more detail embodiments of the present invention with reference to the schematic drawings. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
As described in the background art, currently, the auxiliary pattern adding method includes a rule-based adding method, a model-based adding method, an inverse lithography calculation-based adding method, and the like. The auxiliary patterns added based on the rules have certain constraint conditions, so that the auxiliary patterns added on the periphery of part of the main patterns are unreasonably distributed, the layout photoetching process window is too low, and the yield of the whole chip is influenced. For example, for a layout containing a plurality of main patterns each in a regular quadrangle, the existing method for adding auxiliary patterns based on rules is to add at least one auxiliary pattern with a constant width and position between any two edges of two adjacent main patterns.
However, since the peripheral region between two adjacent main patterns in the layout may constitute a structural region of a special shape, such as a corner region, a sector region, etc., if the conventional rule-based auxiliary pattern adding method is used, the sub-resolution auxiliary patterns added for a plurality of main patterns in such a special region have an intersection with each other, are likely to collide with each other, and cannot be simply merged. In order to solve this problem, it is a conventional practice to delete part of the auxiliary graphics in the special area according to a certain adjustment rule. However, the existing method for simply deleting part of the auxiliary patterns in the special area can cause the addition of the auxiliary patterns in the area to be incomplete, thereby reducing the photoetching process window of the main patterns and the layout and influencing the product yield.
Therefore, the invention provides an auxiliary graph adding method and device and a test layout so as to improve the process window of the layout and increase the stability of a product.
The method for adding the auxiliary graphics provided by the present invention is first described below.
Referring to fig. 1, fig. 1 is a schematic flow chart of an auxiliary graph adding method according to an embodiment of the present invention, where the method includes the following steps:
step S100, determining a test layout corresponding to the prefabricated layout, wherein the test layout is provided with a plurality of main patterns, and at least two adjacent main patterns in the test layout are arranged in a staggered manner to form a corresponding corner area.
In this embodiment, the corresponding test layout may be determined according to the pre-fabricated layout to verify whether the lithography process window of each main pattern in the pre-fabricated layout meets the design requirement, and if not, OPC correction may be performed in time, so as to effectively improve the lithography process window of the layout and improve the yield of products. The test layout can comprise a plurality of main patterns, part of adjacent two main patterns can be arranged in a staggered mode, and part of adjacent two main patterns can be arranged in an aligned mode. Illustratively, as shown in fig. 2, main pattern 1 and main pattern 3 are two adjacent main patterns arranged in a staggered manner, main pattern 2 and main pattern 4 are two adjacent main patterns arranged in a staggered manner, and main pattern 2 and main pattern 3 are two adjacent main patterns arranged in an aligned manner. Therefore, when the corner region to be processed is determined as in step S200 below, the peripheral region of the main pattern 1 corresponding to the left side of the main pattern 3 is the corner region to be processed.
And S200, identifying corner regions needing to be added with the first auxiliary graph from all corner regions of the test layout as corner regions to be processed.
The first auxiliary graph is a polygon with at least two sides, and each side has a certain width. For example, in an embodiment of the present invention, the first auxiliary pattern may be an L-shaped auxiliary pattern, and in other embodiments, the first auxiliary pattern may also be an L-shaped auxiliary pattern, such as a hook-shaped auxiliary pattern, a 7-shaped auxiliary pattern, and the like, which is not limited in this respect.
In this embodiment, after the test layout is determined, any two adjacent main patterns (a first main pattern and a second main pattern) may be selected, and whether the projection of the first main pattern and the projection of the second main pattern in the horizontal direction coincide with the projection of the first main pattern in the vertical direction is determined; if the projection of the first main pattern and the projection of the second main pattern in the horizontal direction are not coincident with the projection of the second main pattern in the vertical direction, defining the peripheral area of the two adjacent main patterns as the corner area corresponding to the main patterns. Then, screening out all corner regions in the test layout by the method, then determining whether the simulated photoetching process window of the main graph corresponding to each corner region meets a preset target value, and taking the corner region corresponding to the main graph which does not meet the preset target value as a corner region to be processed.
Optionally, before determining the corner region to be processed according to step S200, the main pattern in the test layout may be added with the auxiliary pattern for one time, and then the corner region to be processed is determined according to the method provided by the present invention. Specifically, the step of determining the corner region to be processed after the auxiliary pattern is added once to the main pattern in the test layout provided by the present invention may be as follows:
firstly, after a test layout corresponding to a pre-manufactured layout is determined and before all corner regions needing to be added with auxiliary graphics in the test layout are determined, adding a second auxiliary graphic in a linear or grating type at the periphery of the corresponding main graphic in the test layout according to a preset auxiliary graphic adding rule;
secondly, identifying corner regions with incomplete addition of second auxiliary patterns from all corner regions of the test layout, and using the corner regions as corner regions needing to be added with first auxiliary patterns to obtain the corner regions to be processed;
finally, in each corner region to be processed, replacing the incomplete second auxiliary graph with the first auxiliary graph so as to add the first auxiliary graph in an L shape in each corner region to be processed.
In this embodiment, because the arrangement of the plurality of main patterns in the test layout is not regular, and thus the two adjacent main patterns are arranged in a staggered manner, for the main patterns arranged in a staggered manner, the second auxiliary patterns added at the periphery of the main patterns may have the problems of overlapping and conflict. However, the second auxiliary patterns added to the periphery of the main pattern in the staggered arrangement adjusted according to the prior art are incomplete, so that the photolithography process window is reduced.
For such cases, the improved method provided by the invention is as follows: firstly, identifying corner regions with incomplete addition of second auxiliary patterns from all corner regions of the test layout, and using the corner regions as corner regions needing to be added with first auxiliary patterns to obtain the corner regions to be processed; then, in each corner region to be processed, replacing the incomplete second auxiliary graph with the first auxiliary graph so as to add the first auxiliary graph in an L shape in each corner region to be processed.
Further, for each corner region to be processed, the line width of each added first auxiliary pattern may be greater than the line width of the corresponding complete second auxiliary pattern, and the distance from the first auxiliary pattern to each main pattern forming the corner region to be processed is equal to or less than the distance from the original incomplete second auxiliary pattern in the corner region to be processed to each main pattern forming the corner region to be processed.
Optionally, the distance from the first auxiliary pattern added in each corner region to the main pattern forming the corner region to be processed is the same.
It should be noted that, in the step of adding the corresponding auxiliary graphics in the corresponding auxiliary graphics adding region according to the preset auxiliary graphics adding rule, different types of auxiliary graphics including different shapes and/or different placement directions of the auxiliary graphics may be added at the auxiliary peripheries of the different main graphics.
Step S300, adding an L-shaped first auxiliary graph in each corner region to be processed, wherein after the first auxiliary graph is added, the simulated photoetching process window of each main graph forming the corner region to be processed can reach a preset target value.
In this embodiment, after the corner regions to be processed in the test layout are determined through step S200, a first auxiliary pattern with an L-shaped pattern shape may be added to each of the corner regions to be processed. Illustratively, two sides of the first auxiliary pattern having a certain width of the L-shape may be respectively parallel to two main patterns forming the corner region to be processed, as shown in fig. 3 as a first auxiliary pattern 5.
Specifically, in the embodiment of the present invention, an implementation manner is provided that can determine the width of the first auxiliary pattern added in the corner region, specifically as follows:
firstly, adding a first auxiliary graph with an initial width in each corner area to be processed;
then, after the first auxiliary graph with the initial width is added, judging whether the simulated photoetching process windows of the main graphs forming each corner area to be processed can reach a preset target value or not, and judging whether each added first auxiliary graph has exposure risk or not;
then, if the simulated photoetching process window of any main pattern forming a certain corner region to be processed does not meet a preset target value and/or the first auxiliary pattern added in the corner region to be processed has exposure risk, the width of the first auxiliary pattern added in the corner region to be processed is increased or decreased until the simulated photoetching process window of each main pattern forming the corner region to be processed meets the preset target value and the first auxiliary pattern added in the corner region to be processed has no exposure risk.
In this embodiment, a first auxiliary pattern with an initial width may be added in each corner region to be processed, and then, after the first auxiliary pattern with the initial width is determined to be added, whether the simulated photolithography process window of each main pattern in each corner region to be processed can reach a preset target value, and whether the simulated light intensity value of each added first auxiliary pattern is greater than the light intensity value of the preset auxiliary pattern that can be exposed and developed is determined. If the photolithography process window of the main pattern does not meet the preset target value and/or the simulated light intensity value of the first auxiliary pattern with the initial width is greater than the light intensity value of the auxiliary pattern capable of being exposed and developed, increasing or decreasing the initial width of the first auxiliary pattern until a suitable first auxiliary pattern is found for each main pattern corresponding to the corner region and the suitable first auxiliary pattern is added to the position, with the minimum distance from each main pattern, in the corner region, as shown in d in fig. 3.
In the embodiment of the invention, the corner region formed by the peripheral regions of two adjacent main patterns arranged in a staggered manner is determined, then the corner region to be processed, to which the L-shaped auxiliary pattern provided by the invention needs to be added, is identified in the corner region, and the L-shaped auxiliary pattern is added in the corner region to be processed, so that the problem that in the prior art, because the auxiliary pattern needs to be added to each main pattern in the corner region, a plurality of added auxiliary patterns conflict with each other, and the main pattern process window is low is solved. Therefore, the adding method of the auxiliary graph improves the photoetching process window of the layout, improves the accuracy in the OPC correction process and effectively improves the product yield.
Based on the above-mentioned method for adding an auxiliary pattern, an apparatus for adding an auxiliary pattern is further provided in this embodiment, specifically referring to fig. 4, where fig. 4 is a schematic structural diagram of the apparatus for adding an auxiliary pattern in an embodiment of the present invention, the apparatus includes:
the test layout determining module 410 is configured to determine a test layout corresponding to a prefabricated layout, where the test layout has a plurality of main patterns, and at least two adjacent main patterns in the test layout are arranged in a staggered manner to form a corresponding corner region;
a first corner region to be processed determining module 420, configured to identify, from all corner regions of the test layout, a corner region to be added with a first auxiliary pattern, as a corner region to be processed;
the first auxiliary pattern adding module 430 is configured to add an L-shaped first auxiliary pattern in each corner region to be processed, and after the first auxiliary pattern is added, the simulated lithography process window of each main pattern forming the corner region to be processed can reach a preset target value.
Optionally, the adding device may further include:
the second auxiliary graph adding module is used for adding a second auxiliary graph which is linear or grating on the periphery of the corresponding main graph in the test layout according to a preset auxiliary graph adding rule after the test layout corresponding to the prefabricated layout is determined and before all the corner regions needing to be added with the auxiliary graphs in the test layout are determined;
a second corner region to be processed determining module, configured to identify a corner region where a second auxiliary pattern is added incompletely from all corner regions of the test layout, where the corner region where a first auxiliary pattern needs to be added is used to obtain the corner region to be processed; and replacing the incomplete second auxiliary graph with the first auxiliary graph in each corner region to be processed so as to add the first auxiliary graph in an L shape in each corner region to be processed.
Optionally, the first auxiliary graphics adding module may include:
a first adding unit, configured to add a first auxiliary pattern having an initial width in each of the corner regions to be processed;
a judging unit, configured to judge whether a simulated lithography process window of each main pattern forming each corner region to be processed reaches a preset target value after the first auxiliary pattern with the initial width is added, and judge whether each added first auxiliary pattern has an exposure risk;
a second adding unit, configured to increase or decrease the width of the first auxiliary pattern added in the corner region to be processed, if the simulated lithography process window of any one of the main patterns forming a certain corner region to be processed does not meet a preset target value and/or the first auxiliary pattern added in the corner region to be processed has an exposure risk, until the simulated lithography process window of each main pattern forming the corner region to be processed meets the preset target value and the first auxiliary pattern added in the corner region to be processed has no exposure risk.
In addition, based on the auxiliary graph adding rule, the invention also provides a test layout, which comprises the following steps:
the main patterns are arranged in a staggered mode to form corresponding corner regions;
a plurality of second auxiliary graphs which are linear or grating and are arranged at the periphery of the corresponding main graph;
and the addition of the first auxiliary pattern can enable the simulated photoetching process window of each main pattern forming the corner region to reach a preset target value.
Optionally, the line width of the first auxiliary pattern is greater than the line width of the second auxiliary pattern, and for the corner region where the first auxiliary pattern is disposed, the distance from the first auxiliary pattern to each of the main patterns forming the corner region is the same.
In summary, in the method for adding an auxiliary pattern provided by the present invention, a corner region formed by peripheral regions of two adjacent main patterns arranged in a staggered manner is determined, then a corner region to be processed to which an L-shaped auxiliary pattern provided by the present invention needs to be added is identified in the corner region, and an L-shaped auxiliary pattern is added in the corner region to be processed, so that a problem that a main pattern process window is low due to conflicts among a plurality of added auxiliary patterns caused by the need to add an auxiliary pattern to each main pattern in the corner region in the prior art is avoided. Therefore, the adding method of the auxiliary graph improves the photoetching process window of the layout, improves the accuracy in the OPC correction process and effectively improves the product yield.
The embodiment of the invention also provides electronic equipment which comprises a processor, a communication interface, a memory and a communication bus, wherein the processor, the communication interface and the memory complete mutual communication through the communication bus,
a memory for storing a computer program;
and the processor is used for realizing the auxiliary graph adding method provided by the embodiment of the invention when executing the program stored in the memory.
In addition, other implementation manners of the auxiliary graph adding method implemented by the processor executing the program stored in the memory are the same as the implementation manners mentioned in the foregoing method embodiment section, and are not described again here.
The communication bus mentioned above for the control terminal may be a Peripheral Component Interconnect (PCI) bus, an Extended Industry Standard Architecture (EISA) bus, or the like. The communication bus may be divided into an address bus, a data bus, a control bus, etc. For ease of illustration, only one thick line is shown, but this does not mean that there is only one bus or one type of bus.
The communication interface is used for communication between the electronic equipment and other equipment.
The Memory may include a Random Access Memory (RAM) or a Non-Volatile Memory (NVM), such as at least one disk Memory. Optionally, the memory may also be at least one memory device located remotely from the processor.
The Processor may be a general-purpose Processor, including a Central Processing Unit (CPU), a Network Processor (NP), and the like; but also Digital Signal Processors (DSPs), Application Specific Integrated Circuits (ASICs), Field Programmable Gate Arrays (FPGAs) or other Programmable logic devices, discrete Gate or transistor logic devices, discrete hardware components.
In another embodiment of the present invention, there is also provided a computer-readable storage medium having stored therein instructions, which when run on a computer, cause the computer to execute the method for adding an auxiliary graphic as described in any of the above embodiments.
In the above embodiments, the implementation may be wholly or partially realized by software, hardware, firmware, or any combination thereof. When implemented in software, may be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When loaded and executed on a computer, cause the processes or functions described in accordance with the embodiments of the invention to occur, in whole or in part. The computer may be a general purpose computer, a special purpose computer, a network of computers, or other programmable device. The computer instructions may be stored in a computer readable storage medium or transmitted from one computer readable storage medium to another, for example, from one website site, computer, server, or data center to another website site, computer, server, or data center via wired (e.g., coaxial cable, fiber optic, Digital Subscriber Line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.). The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device, such as a server, a data center, etc., that incorporates one or more of the available media. The usable medium may be a magnetic medium (e.g., floppy Disk, hard Disk, magnetic tape), an optical medium (e.g., DVD), or a semiconductor medium (e.g., Solid State Disk (SSD)), among others.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
All the embodiments in the present specification are described in a related manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, as for the apparatus, the electronic device, and the computer-readable storage medium embodiments, since they are substantially similar to the method embodiments, the description is relatively simple, and in relation to the description, reference may be made to some portions of the description of the method embodiments.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.
Claims (8)
1. An auxiliary graphic adding method, comprising:
determining a test layout corresponding to a prefabricated layout, wherein the test layout is provided with a plurality of main patterns, and at least two adjacent main patterns in the test layout are arranged in a staggered manner to form a corresponding corner region;
adding a second auxiliary graph in a linear type or a grating type at the periphery of the corresponding main graph in the test layout according to a preset auxiliary graph adding rule;
identifying corner regions with incomplete addition of the second auxiliary pattern from all corner regions of the test layout as corner regions to be processed, to which the first auxiliary pattern needs to be added;
and replacing the incomplete second auxiliary graph with an L-shaped first auxiliary graph in each corner area to be processed, wherein after the first auxiliary graph is added, the simulated photoetching process window of each main graph forming the corner area to be processed can reach a preset target value.
2. The adding method as claimed in claim 1, wherein for each corner region to be processed, the line width of each added first auxiliary pattern is greater than the line width of the corresponding complete second auxiliary pattern, and the distance from the first auxiliary pattern to each main pattern forming the corner region to be processed is equal to or less than the distance from the incomplete second auxiliary pattern originally in the corner region to each main pattern forming the corner region to be processed.
3. The auxiliary pattern as claimed in claim 2, wherein the first auxiliary pattern added in each corner region to be processed has the same distance to each of the main patterns forming the corner region to be processed.
4. The adding method according to any one of claims 1 to 3, wherein the step of replacing the incomplete second auxiliary pattern with the L-shaped first auxiliary pattern in each of the corner regions to be processed comprises:
adding a first auxiliary graph with an initial width in each corner area to be processed;
judging whether the simulated photoetching process windows of the main patterns forming each corner area to be processed can reach a preset target value after the first auxiliary patterns with the initial width are added, and judging whether each added first auxiliary pattern has exposure risk;
if the simulated photoetching process window of any main pattern forming a certain corner region to be processed does not meet a preset target value and/or the first auxiliary pattern added in the corner region to be processed has exposure risk, increasing or decreasing the width of the first auxiliary pattern added in the corner region to be processed until the simulated photoetching process window of each main pattern forming the corner region to be processed meets the preset target value and the first auxiliary pattern added in the corner region to be processed has no exposure risk.
5. An auxiliary graphic adding apparatus, comprising:
the device comprises a test layout determining module, a pre-manufacturing module and a processing module, wherein the test layout determining module is used for determining a test layout corresponding to a pre-manufactured layout, the test layout is provided with a plurality of main patterns, and at least two adjacent main patterns in the test layout are arranged in a staggered manner to form a corresponding corner area;
the second auxiliary graph adding module is used for adding a linear or grating type second auxiliary graph on the periphery of the corresponding main graph in the test layout according to a preset auxiliary graph adding rule;
the first corner region to be processed determining module is used for identifying the corner region with incomplete addition of the second auxiliary graph from all corner regions of the test layout as the corner region to be processed to which the first auxiliary graph needs to be added;
and the first auxiliary graph adding module is used for replacing the incomplete second auxiliary graph with an L-shaped first auxiliary graph in each corner area to be processed, and after the first auxiliary graph is added, the simulated photoetching process window of each main graph forming the corner area to be processed can reach a preset target value.
6. The adding apparatus of claim 5, wherein the first auxiliary graphics adding module comprises:
a first adding unit, configured to add a first auxiliary pattern having an initial width in each of the corner regions to be processed;
a judging unit, configured to judge whether a simulated lithography process window of each main pattern forming each corner region to be processed reaches a preset target value after the first auxiliary pattern with the initial width is added, and judge whether each added first auxiliary pattern has an exposure risk;
a second adding unit, configured to increase or decrease the width of the first auxiliary pattern added in the corner region to be processed, if the simulated lithography process window of any one of the main patterns forming a certain corner region to be processed does not meet a preset target value and/or the first auxiliary pattern added in the corner region to be processed has an exposure risk, until the simulated lithography process window of each main pattern forming the corner region to be processed meets the preset target value and the first auxiliary pattern added in the corner region to be processed has no exposure risk.
7. A test layout, comprising:
the main patterns are arranged in a staggered mode to form corresponding corner regions;
a plurality of second auxiliary graphs which are linear or grating and are arranged at the periphery of the corresponding main graph;
and the addition of the first auxiliary pattern can enable the simulated photoetching process window of each main pattern forming the corner region to reach a preset target value.
8. The test layout according to claim 7, wherein a line width of the first auxiliary pattern is larger than a line width of the second auxiliary pattern, and a distance from the first auxiliary pattern to each of the main patterns forming the corner regions is the same for the corner regions where the first auxiliary pattern is disposed.
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| CN114722766A (en) * | 2022-04-15 | 2022-07-08 | 长鑫存储技术有限公司 | Design method, design apparatus and computer-readable storage medium for integrated circuit |
| CN115048900B (en) * | 2022-08-15 | 2022-11-29 | 墨研计算科学（南京）有限公司 | Corner filling method and device for integrated circuit layout and computer equipment |
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