CN115933304A - Optical proximity effect correction method and device, electronic equipment and storage medium - Google Patents
Optical proximity effect correction method and device, electronic equipment and storage medium Download PDFInfo
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Abstract
The application provides an optical proximity effect correction method and device, an electronic device and a storage medium. The method comprises the following steps: segmenting the unfixed sides of the target through hole graph according to a preset segmentation value and the known segmentation side length to obtain a plurality of segmentation sides; screening out target subsection edges meeting the distance condition from the plurality of subsection edges; and when the error between the simulated graph and the target through hole graph is in a preset range, finishing the correction. The method can solve the problems of how to make the error between the finally obtained simulation result and the target graph smaller and improve the correction precision of the OPC.
Description
Technical Field
The present application relates to microelectronic layout data optical correction technologies, and in particular, to an optical proximity effect correction method and apparatus, an electronic device, and a storage medium.
Background
In the fabrication of deep submicron integrated circuits, model-based Optical Proximity Correction (OPC) has been widely applied in photolithography processes of different levels. Especially starting from the 180nm technology node, where the minimum line width on the device is smaller than the exposure wavelength, OPC becomes indispensable and becomes a critical step in the mask pattern processing.
However, in the actual correction process, due to the limitation of mask manufacturing capability, the OPC correction pattern segments must reach a certain size, which affects the OPC correction accuracy, especially in the case of complicated pattern structure. In addition, a reasonable number of OPC iterations must be employed in view of the publication period, which also affects the accuracy of the final result. Although OPC software can adjust the layout automatically and continuously according to the error between the simulation result and the target graph, under the condition of high graph density, the layout is more difficult to correct due to the interaction between graphs, and the imaging result of the adjacent graph can be influenced by the local slight change of each graph, so that the situation that part of graphs or graph parts cannot reach the target still exists though repeated iteration processing.
How to make the error between the finally obtained simulation result and the target pattern smaller and improve the correction accuracy of OPC still needs to be considered.
Disclosure of Invention
The application provides an optical proximity effect correction method and device, an electronic device and a storage medium, which are used for solving the problems of how to make the error between a finally obtained simulation result and a target graph smaller and improve the correction precision of OPC.
In one aspect, the present application provides a method for correcting an optical proximity effect, including:
the method comprises the steps of obtaining a target through hole graph, segmenting a non-fixed side of the target through hole graph according to a preset segmentation value and a known segmentation side length to obtain a plurality of segmentation sides, wherein the target through hole graph is rectangular in shape and comprises a fixed side and a non-fixed side;
screening out target subsection edges which meet distance conditions from the plurality of subsection edges, wherein the distance conditions at least comprise the following two conditions: the first condition is that in a plane graph formed by the target through hole graph and the sub-resolution auxiliary graph, the distance between the target through hole graph and each graph adjacent to each other in two mutually perpendicular directions is smaller than a first preset distance; the second condition is that the distance between the segmented edge and the projection graph is smaller than a second preset distance, and the projection graph comprises a projection graph of a sub-resolution auxiliary graph;
and carrying out optical proximity effect correction based on the target segmented edge to obtain a simulated graph, and finishing correction when the error between the simulated graph and the target through hole graph is within a preset range.
In one embodiment, the first preset distance and the second preset distance are both determined according to the length of a segment edge;
the first preset distance is greater than the length of the segmented edge, and the second preset distance is less than the length of the segmented edge.
In one embodiment, the obtaining of the simulated graph after the optical proximity correction based on the target segment edge includes:
acquiring the moving direction and the moving distance of a target segmented edge;
moving the target segmented edge according to the moving direction and the moving distance;
and carrying out optical proximity effect correction based on the moved target segmented edge to obtain a simulation graph.
In one embodiment, the obtaining the moving direction and the moving distance of the target segment edge includes:
taking the direction which is vertical to the target segmentation side and faces the outer part of the target through hole pattern as a moving direction;
and determining the moving distance according to the length of the target segmentation edge and a preset mask rule value.
In one embodiment, the determining the moving distance according to the length of the target segment edge and a preset mask rule value includes:
acquiring the ratio of the length of the target segmentation edge to a preset mask rule value;
and rounding the ratio to obtain the moving distance.
In one embodiment, the obtaining the simulation graph after performing the optical proximity correction based on the moved target segment edge includes:
and correcting the modified graph formed based on the moved target segment edges based on the optical proximity effect correction model to obtain a simulated graph.
In one embodiment, the method further comprises:
and when the error between the simulation graph and the target through hole graph is out of a preset range, returning to the step of executing, and screening out the target segmentation edges meeting the distance condition from the plurality of segmentation edges until the error between the simulation graph and the target through hole graph is in the preset range, and finishing correction.
In another aspect, the present application provides an optical proximity correction apparatus, including:
the device comprises an acquisition module, a segmentation module and a display module, wherein the acquisition module is used for acquiring a target through hole pattern, segmenting a non-fixed side of the target through hole pattern according to a preset segmentation value and a known segmentation side length to obtain a plurality of segmentation sides, the target through hole pattern is rectangular in shape and comprises a fixed side and a non-fixed side;
the screening module is used for screening out the target segmented edges meeting the distance conditions from the plurality of segmented edges, and the distance conditions at least comprise the following two conditions: the first condition is that in a plane graph formed by the target through hole graph and the sub-resolution auxiliary graph, the distance between the target through hole graph and each graph adjacent to each other in two mutually perpendicular directions is smaller than a first preset distance; the second condition is that the distance between the segmented edge and the projection graph is smaller than a second preset distance, and the projection graph comprises a projection graph of a sub-resolution auxiliary graph;
and the correction module is used for obtaining a simulation graph after optical proximity effect correction is carried out on the basis of the target segmentation edge, and finishing correction when the error between the simulation graph and the target through hole graph is within a preset range.
In another aspect, the present application provides an electronic device comprising: a processor, and a memory communicatively coupled to the processor;
the memory stores computer-executable instructions;
the processor executes computer-executable instructions stored by the memory to implement the optical proximity correction method according to the first aspect.
In another aspect, the present application provides a computer-readable storage medium having stored therein computer-executable instructions, which when executed, cause a computer to perform the optical proximity correction method according to the first aspect.
In summary, embodiments of the present disclosure provide a method for correcting optical proximity effect, which first obtains a target via pattern, i.e., a pattern to be simulated by a target. And segmenting the non-fixed edge of the target through hole graph according to a preset segmentation value and the known segmentation edge length to obtain a plurality of segmentation edges. Screening out the target segmentation edges meeting the distance condition from the plurality of segmentation edges, wherein the distance condition at least comprises the following two conditions: the first condition is that in a plane graph formed by the target through hole graph and the sub-resolution auxiliary graph, the distance between the target through hole graph and each graph adjacent to each other in two mutually perpendicular directions is smaller than a first preset distance; the second condition is that the distance between the segment edge and the projected pattern is smaller than a second preset distance, and the projected pattern comprises a projected pattern of the sub-resolution auxiliary pattern. And finally, carrying out optical proximity effect correction based on the target segmentation edge to obtain a simulated graph, and finishing correction when the error between the simulated graph and the target through hole graph is within a preset range.
By the method provided by the embodiment of the application, partial segmented edges needing to be processed can be screened out before the OPC is formally carried out, and the OPC is carried out based on the segmented edges needing to be processed, so that errors caused by the overall movement of the graph edges are reduced. Due to the optical proximity effect, the error between the finally obtained simulation pattern and the target through hole pattern is smaller. Therefore, the method provided by the embodiment of the application can reduce the error between the finally obtained simulation result and the target graph, improve the correction precision of the OPC, further improve the process window, reduce the process risk and improve the performance and the product yield of the finally produced circuit.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure.
FIG. 1 is a schematic diagram illustrating an error between a simulation result and a target pattern after OPC correction according to the prior art provided by the present application;
FIG. 2 is a schematic diagram illustrating another error between a simulation result and a target pattern after OPC correction according to the prior art provided by the present application;
FIG. 3 is a schematic diagram illustrating an application scenario of the optical proximity correction method provided in the present application;
FIG. 4 is a flowchart illustrating a method for optical proximity correction according to an embodiment of the present disclosure;
FIG. 5 is a schematic diagram illustrating a segment of a non-stationary edge of a target via pattern in a method for optical proximity correction according to an embodiment of the present application;
FIG. 6 is a schematic illustration of screening target segment edges in a target via pattern according to an embodiment of the present application;
FIG. 7 is a schematic diagram of an error between a simulated pattern and a target via pattern provided by an embodiment of the present application;
FIG. 8 is another schematic error diagram between a simulated pattern and a target via pattern provided by an embodiment of the present application;
FIG. 9 is a schematic diagram of an optical proximity correction apparatus according to an embodiment of the present application;
fig. 10 is a schematic diagram of an electronic device provided in an embodiment of the present application.
With the foregoing drawings in mind, certain embodiments of the disclosure have been shown and described in more detail below. These drawings and written description are not intended to limit the scope of the disclosed concepts in any way, but rather to illustrate the concepts of the disclosure to those skilled in the art by reference to specific embodiments.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the exemplary embodiments below are not intended to represent all implementations consistent with the present disclosure. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the disclosure, as detailed in the appended claims.
In the description of the present application, it is to be understood that the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or as implying that the number of indicated technical features is indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In the fabrication of deep submicron integrated circuits, model-based Optical Proximity Correction (OPC) has been widely applied in photolithography processes of different levels. Especially starting from the 180nm technology node, where the minimum line width on the device is smaller than the exposure wavelength, OPC becomes indispensable and becomes a critical step in the mask pattern processing.
However, in the actual correction process, due to the limitation of mask manufacturing capability, the OPC correction pattern segments must reach a certain size, which affects the OPC correction accuracy, especially in the case of complicated pattern structure. In addition, a reasonable number of OPC iterations must be employed in view of the publication period, which also affects the accuracy of the final result. Although OPC software can adjust the layout automatically and continuously according to the error between the simulation result and the target graph, under the condition of high graph density, the layout is more difficult to correct due to the interaction between graphs, and the imaging result of the adjacent graph can be influenced by the local slight change of each graph, so that the situation that part of graphs or graph parts cannot reach the target still exists though repeated iteration processing.
Referring to fig. 1 and 2, fig. 2 is a partially enlarged view of fig. 1. The error between the simulation result (i.e., the simulation pattern, the irregular pattern in fig. 1) and the target pattern (the rectangular pattern in fig. 1) was 4.1nm, and the error between the simulation pattern and the target pattern was very large.
Based on the above, the present application provides an optical proximity correction method, an optical proximity correction device, an electronic apparatus, and a storage medium. The optical proximity effect correction method comprises the following steps: the method comprises the steps of obtaining a target through hole graph, segmenting the non-fixed side of the target through hole graph according to a preset segmentation value and the known segmentation side length to obtain a plurality of segmentation sides, wherein the target through hole graph is rectangular in shape and comprises a fixed side and a non-fixed side. Screening out the target subsection edge which meets the distance condition from the plurality of subsection edges, wherein the distance condition at least comprises the following two conditions: the first condition is that in a plane graph formed by the target through hole graph and the sub-resolution auxiliary graph, the distance between the target through hole graph and each graph adjacent to each other in two mutually perpendicular directions is smaller than a first preset distance; the second condition is that the distance between the segment edge and the projected pattern is smaller than a second preset distance, and the projected pattern includes a projected pattern of the sub-resolution auxiliary pattern. And finally, carrying out optical proximity effect correction based on the target segmented edge to obtain a simulated graph, and finishing correction when the error between the simulated graph and the target through hole graph is within a preset range.
By screening out part of the segmented edges to be processed and then carrying out OPC correction based on the segmented edges to be processed, the error caused by the integral movement of the graph edges is reduced. Due to the optical proximity effect, the error between the finally obtained simulation pattern and the target through hole pattern is smaller. Therefore, the correction precision of OPC can be improved, the process window is further improved, the process risk is reduced, and the performance and the product yield of the finally produced circuit are improved.
The optical proximity effect correction method provided by the application is applied to electronic equipment, such as a computer, a server used in a laboratory and the like. Fig. 3 is an application schematic diagram of the optical proximity correction method provided in the present application, in which the electronic device obtains a target via pattern, and segments a non-fixed edge of the target via pattern according to a preset segmentation value and a known segmentation edge length to obtain a plurality of segmentation edges. And screening out the target subsection edges which meet the distance condition from the plurality of subsection edges. And finally, carrying out optical proximity effect correction based on the target segmented edge to obtain a simulated graph, and finishing correction when the error between the simulated graph and the target through hole graph is within a preset range.
Referring to fig. 4, an embodiment of the present application provides a method for correcting an optical proximity effect, including:
s410, obtaining a target through hole graph, segmenting the non-fixed side of the target through hole graph according to a preset segmentation value and the known segmentation side length to obtain a plurality of segmentation sides, wherein the target through hole graph is rectangular in shape and comprises a fixed side and a non-fixed side.
In consideration of mask blank manufacturing analysis capability and an application range of OPC model accuracy, the short side (line end portion ) of a rectangular via pattern is not generally segmented in OPC processing. Note that the segment edge length (segment) is known before segmenting the rectangular via pattern. The line end part of the rectangular through hole graph can only obtain one segmentation side after being segmented, and the length of the segmented residual side is smaller than the known length (segment) of the segmentation side. Therefore, the line end portion in the rectangular via pattern is not segmented, and is also referred to as a fixed edge. The side of the rectangular via pattern that can satisfy N number of segmentation to obtain N number of segmented sides (N is a natural number greater than 1, for example, two segmented sides can be obtained after two times of segmentation, and three segmented sides can be obtained after three times of segmentation) is called as a non-fixed side.
In general, the short side of the rectangular via pattern is a line end portion, which is a fixed side and is not segmented, and the long side portion is a non-fixed side and is segmented. Thus, after the target via pattern is obtained, the target via pattern has a rectangular shape including a fixed side (short side) and a non-fixed side (long side).
After the target through hole graph is obtained, the worker sets a preset segmentation value according to the current node and the actual environmental factors, and then inputs the preset segmentation value to the electronic equipment. The electronic device segments the non-fixed edge of the target via pattern according to a preset segment value and a known segment edge length (segment) to obtain a plurality of segment edges.
As shown in fig. 5, if the preset segmentation value is 3, the unfixed sides (long sides) of the target via pattern are segmented to obtain 3 segmented sides with equal length, and one target via pattern corresponds to 6 segmented sides. If a mask plate has a plurality of target through hole patterns, the unfixed edge of each target through hole pattern is segmented, as shown in fig. 5, 12 segmented edges can be obtained by corresponding two target through hole patterns.
S420, screening out target segmented edges meeting the distance condition from the plurality of segmented edges, wherein the distance condition at least comprises the following two conditions: the first condition is that in a plane graph formed by the target through hole graph and the sub-resolution auxiliary graph, the distance between the target through hole graph and each graph adjacent to each other in two mutually perpendicular directions is smaller than a first preset distance; the second condition is that the distance between the segment edge and the projected pattern is smaller than a second preset distance, and the projected pattern includes a projected pattern of the sub-resolution auxiliary pattern.
The method is characterized in that a plurality of fine patterns are added around a sparse pattern in an integrated circuit design layout, so that the sparse pattern looks like a dense pattern in an optical angle, the fine patterns must be smaller than the resolution of a photoetching machine, and the patterns only scatter light and cannot be transferred to a photoresist during exposure, so that the patterns are called sub-resolution auxiliary patterns or scattering bars.
As shown in fig. 6, a sub-resolution auxiliary pattern is arranged around the target via pattern. In order to reduce errors caused by graph movement, a plurality of segment edges need to be screened by setting a distance condition so as to screen out the segment edge with the smallest influence after movement.
Specifically, the distance condition includes at least two conditions.
The first condition is that, in a plane pattern composed of the target via pattern and the sub-resolution auxiliary pattern, a distance between the target via pattern and each pattern adjacent to each other in two mutually perpendicular directions is smaller than a first preset distance. As shown in fig. 6, how to determine whether a segment edge is a target segment edge is described by taking a segment edge ab as an example. For the segmented side ab, the distance between the target through hole pattern A and the adjacent target through hole pattern B and the sub-resolution auxiliary patterns C, D and E is smaller than a first preset distance. The first preset distance is determined according to the length of the segmentation edge, and the first preset distance is larger than the length of the segmentation edge. Optionally, the first preset distance is 2length of segment, segment represents the length of the segment edge, and 2length of segment represents twice the length of the segment edge. That is, the first condition is that space <2length of segment, which represents the distance between the target via hole pattern and each pattern adjacent in two directions perpendicular to each other.
The second condition is that a distance between the segment edge and the projected pattern is smaller than a second preset distance, and the projected pattern includes a projected pattern of the sub-resolution auxiliary pattern. The projection pattern refers to all patterns projected on the target through hole pattern, and is obtained by projecting the patterns placed on the mask plate where the target through hole pattern is located, wherein the patterns placed on the mask plate where the target through hole pattern is located comprise the sub-resolution auxiliary patterns and other patterns.
The second preset distance is also determined according to the length of the segmented edge, and the second preset distance is smaller than the length of the segmented edge. Optionally, the second predetermined distance is 0.25length of segment, and the second condition is that projection _ length <0.25 length of segment, and projection _ length represents the length of the projection pattern projected onto the segment edge.
If the segment edge ab satisfies space <2length of segment and project _ length <0.25 length of segment, then the segment edge ab is determined to be the target segment edge.
In one example, segment =48, space =77.5, project _length =1nm, and the target segment edge includes the segment edge ab and the segment edge cd shown in fig. 6.
When the target segment edge is screened, the screening can be realized through the DRC script.
S430, obtaining a simulated pattern after optical proximity effect correction based on the target segmented edge, and finishing correction when the error between the simulated pattern and the target through hole pattern is within a preset range.
When the optical proximity effect correction is performed based on the target segment edge, the target segment edge needs to be moved first, and then the OPC correction is performed based on the moved target segment edge. Specifically, the moving direction and the moving distance of the target segment edge are obtained, and the target segment edge is moved according to the moving direction and the moving distance. And then carrying out optical proximity effect correction based on the moved target segment edge to obtain a simulation graph.
Optionally, the direction perpendicular to the target segment edge and toward the outside of the target through hole pattern is the moving direction. As shown in fig. 6, the moving direction of the target segment side ab is the direction 1 shown in fig. 6, and the moving direction of the target segment side cd is the direction 2 shown in fig. 6.
Optionally, the moving distance is determined according to the length of the target segment edge and a preset mask rule value. Namely, the ratio between the length of the target segment edge and the preset mask rule value is obtained, and then rounding processing is performed on the ratio to obtain the moving distance. The moving distance is round (segment/MRC), where round is the meaning of rounding and MRC is the value of the mask rule.
For example, segment =48, mrc =18, the ratio of the length of the target segment edge to the preset mask rule value is equal to 2.67nm, and the moving distance is equal to 2nm. I.e. the target segment edges are shifted by 2nm in the direction of movement.
And finally, correcting the modified graph formed based on the moved target segmented edge based on the optical proximity effect correction model to obtain a simulated graph.
As shown in fig. 7 and 8, when the target segment edge is selected and shifted by 2nm, the error between the dummy pattern and the target via pattern is 2nm due to the optical proximity effect. Compared with the error of 4.1nm in the prior art, the method provided by the embodiment can greatly reduce the OPC correction error.
And finishing the correction when the error between the simulation graph and the target through hole graph is within a preset range. The preset range can be set according to the node and actual factors.
In an alternative embodiment, when the error between the simulation pattern and the target via pattern is outside the preset range, the method returns to step S420 until the correction is completed when the error between the simulation pattern and the target via pattern is within the preset range. Or when the returned execution times reach the preset times and the correction is not finished, ending the execution and displaying the failure.
In summary, the present embodiment provides a method for correcting optical proximity effect, which first obtains a target via pattern, i.e. a pattern to be simulated by a target. And segmenting the unfixed sides of the target through hole graph according to a preset segmentation value and the known segmentation side length to obtain a plurality of segmentation sides. Screening out the target subsection edge which meets the distance condition from the plurality of subsection edges, wherein the distance condition at least comprises the following two conditions: the first condition is that in a plane graph formed by the target through hole graph and the sub-resolution auxiliary graph, the distance between the target through hole graph and each graph adjacent to each other in two mutually perpendicular directions is smaller than a first preset distance; the second condition is that a distance between the segment edge and the projected pattern is smaller than a second preset distance, and the projected pattern includes a projected pattern of the sub-resolution auxiliary pattern. And finally, carrying out optical proximity effect correction based on the target segmented edge to obtain a simulated graph, and finishing correction when the error between the simulated graph and the target through hole graph is within a preset range.
By the method provided by the embodiment of the application, partial segmented edges needing to be processed can be screened out before the OPC is formally carried out, and the OPC is carried out based on the segmented edges needing to be processed, so that errors caused by the overall movement of the graph edges are reduced. Due to the optical proximity effect, the error between the finally obtained simulation pattern and the target through hole pattern is smaller. Therefore, the method provided by the embodiment of the application can reduce the error between the finally obtained simulation result and the target graph, improve the correction precision of the OPC, further improve the process window, reduce the process risk and improve the performance and the product yield of the finally produced circuit.
Referring to fig. 9, an embodiment of the present application further provides an optical proximity correction apparatus 10, including:
the obtaining module 11 is configured to obtain a target through hole pattern, and segment a non-fixed edge of the target through hole pattern according to a preset segmentation value and a known segmentation edge length to obtain a plurality of segmentation edges, where the target through hole pattern is rectangular and includes a fixed edge and a non-fixed edge.
The screening module 12 is configured to screen out a target segment edge that meets a distance condition among the plurality of segment edges, where the distance condition at least includes the following two conditions: the first condition is that in a plane graph formed by the target through hole graph and the sub-resolution auxiliary graph, the distance between the target through hole graph and each graph adjacent to each other in two mutually perpendicular directions is smaller than a first preset distance; the second condition is that the distance between the segment edge and the projected pattern is smaller than a second preset distance, and the projected pattern includes a projected pattern of the sub-resolution auxiliary pattern.
And the correction module 13 is configured to obtain a simulated pattern after performing optical proximity effect correction based on the target segment edge, and when an error between the simulated pattern and the target through hole pattern is within a preset range, complete the correction.
The length of each segmented side is equal, and the first preset distance and the second preset distance are determined according to the length of the segmented side. The first preset distance is greater than the length of the segment edge, and the second preset distance is less than the length of the segment edge.
The correction module 13 is specifically configured to obtain a moving direction and a moving distance of the target segment edge; moving the target segment edge according to the moving direction and the moving distance; and carrying out optical proximity effect correction based on the moved target segmented edge to obtain a simulation graph.
The correction module 13 is specifically configured to use a direction perpendicular to the target segment side and facing the outside of the target via pattern as a moving direction; and determining the moving distance according to the length of the target segmentation edge and a preset mask rule value.
The correction module 13 is specifically configured to obtain a ratio between a length of a target segment edge and a preset mask rule value; and rounding the ratio to obtain the moving distance.
The correction module 13 is specifically configured to correct a modified graph formed based on the moved target segment edge based on the optical proximity effect correction model, so as to obtain a simulated graph.
The correcting module 13 is further configured to, when the error between the simulation pattern and the target via pattern is outside the preset range, return to the step of executing the step of screening out the target segment sides that meet the distance condition from among the multiple segment sides, until the error between the simulation pattern and the target via pattern is within the preset range, complete the correction.
Referring to fig. 10, an embodiment of the present application further provides an electronic device 20, which includes a processor 21 and a memory 22 communicatively connected to the processor 21. The memory 22 stores computer-executable instructions, and the processor 21 executes the computer-executable instructions stored in the memory 22 to implement the optical proximity correction method provided in any one of the above embodiments.
The present application also provides a computer-readable storage medium having stored therein computer-executable instructions, which when executed, cause a processor to execute the computer-executable instructions for implementing the optical proximity correction method provided by any one of the above embodiments.
The present application also provides a computer program product comprising a computer program which, when executed by a processor, implements the optical proximity correction method as provided in any of the above embodiments.
The computer-readable storage medium may be a Read Only Memory (ROM), a Programmable Read Only Memory (PROM), an Erasable Programmable Read Only Memory (EPROM), an Electrically Erasable Programmable Read Only Memory (EEPROM), a magnetic Random Access Memory (FRAM), a Flash Memory (Flash Memory), a magnetic surface Memory, an optical Disc, or a Compact Disc Read-Only Memory (CD-ROM). And may be various electronic devices such as mobile phones, computers, tablet devices, personal digital assistants, etc., including one or any combination of the above-mentioned memories.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising a component of' 8230; \8230;" does not exclude the presence of another like element in a process, method, article, or apparatus that comprises the element.
The above-mentioned serial numbers of the embodiments of the present application are merely for description and do not represent the merits of the embodiments.
Through the above description of the embodiments, those skilled in the art will clearly understand that the method of the above embodiments can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware, but in many cases, the former is a better implementation manner. Based on such understanding, the technical solutions of the present application may be embodied in the form of a software product, which is stored in a storage medium (such as ROM/RAM, magnetic disk, optical disk) and includes instructions for enabling a terminal device (such as a mobile phone, a computer, a server, an air conditioner, or a network device) to execute the method described in the embodiments of the present application.
The present application is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the application. It will be understood that each flow and/or block of the flowchart illustrations and/or block diagrams, and combinations of flows and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
The above description is only a preferred embodiment of the present application, and not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes, which are made by the contents of the specification and the drawings of the present application, or which are directly or indirectly applied to other related technical fields, are included in the scope of the present application.
Claims (10)
1. An optical proximity correction method, comprising:
the method comprises the steps of obtaining a target through hole graph, segmenting a non-fixed side of the target through hole graph according to a preset segmentation value and the known segmentation side length to obtain a plurality of segmentation sides, wherein the target through hole graph is rectangular in shape and comprises a fixed side and a non-fixed side;
screening out the target segmentation edges meeting the distance condition from the plurality of segmentation edges, wherein the distance condition at least comprises the following two conditions: the first condition is that in a plane graph formed by the target through hole graph and the sub-resolution auxiliary graph, the distance between the target through hole graph and each graph adjacent to each other in two mutually perpendicular directions is smaller than a first preset distance; the second condition is that the distance between the segmented edge and the projection graph is smaller than a second preset distance, and the projection graph comprises a projection graph of a sub-resolution auxiliary graph;
and carrying out optical proximity effect correction based on the target segmented edge to obtain a simulated graph, and finishing correction when the error between the simulated graph and the target through hole graph is within a preset range.
2. The method according to claim 1, wherein the first preset distance and the second preset distance are both determined according to the length of a segment edge;
the first preset distance is greater than the length of the segmented edge, and the second preset distance is less than the length of the segmented edge.
3. The method of claim 2, wherein the obtaining the simulated image after the optical proximity correction based on the target segment edge comprises:
acquiring the moving direction and the moving distance of a target segmented edge;
moving the target segmented edge according to the moving direction and the moving distance;
and carrying out optical proximity effect correction based on the moved target segmented edge to obtain a simulation graph.
4. The method of claim 3, wherein the obtaining the moving direction and the moving distance of the target segment edge comprises:
taking the direction which is vertical to the target segmentation side and faces the outer part of the target through hole pattern as a moving direction;
and determining the moving distance according to the length of the target segmentation edge and a preset mask rule value.
5. The method of claim 4, wherein determining the moving distance according to the length of the target segment edge and a preset mask rule value comprises:
obtaining the ratio of the length of the target segmentation edge to a preset mask rule value;
and rounding the ratio to obtain the moving distance.
6. The method according to any one of claims 3-5, wherein the obtaining of the simulated image after the optical proximity correction based on the moved target segment edge comprises:
and correcting the modified graph formed based on the moved target segmented edge based on the optical proximity effect correction model to obtain a simulated graph.
7. The method of claim 1, further comprising:
and when the error between the simulation graph and the target through hole graph is out of a preset range, returning to the step of executing the step of screening out the target subsection sides meeting the distance condition from the plurality of subsection sides until the error between the simulation graph and the target through hole graph is in the preset range, and finishing correction.
8. An optical proximity correction device, comprising:
the device comprises an acquisition module, a segmentation module and a display module, wherein the acquisition module is used for acquiring a target through hole pattern and segmenting a non-fixed side of the target through hole pattern according to a preset segmentation value and a known segmentation side length to obtain a plurality of segmentation sides, the target through hole pattern is rectangular, and the target through hole pattern comprises a fixed side and a non-fixed side;
the screening module is used for screening out the target segmented edges meeting the distance conditions from the plurality of segmented edges, and the distance conditions at least comprise the following two conditions: the first condition is that in a plane graph formed by the target through hole graph and the sub-resolution auxiliary graph, the distance between the target through hole graph and each graph adjacent to each other in two mutually perpendicular directions is smaller than a first preset distance; the second condition is that the distance between the segmented edge and the projection graph is smaller than a second preset distance, and the projection graph comprises a projection graph of a sub-resolution auxiliary graph;
and the correction module is used for obtaining a simulated graph after optical proximity effect correction is carried out on the basis of the target segmentation edge, and finishing correction when the error between the simulated graph and the target through hole graph is within a preset range.
9. An electronic device, comprising: a processor, and a memory communicatively coupled to the processor;
the memory stores computer-executable instructions;
the processor executes computer-executable instructions stored by the memory to implement the optical proximity correction method of any one of claims 1 to 7.
10. A computer-readable storage medium having computer-executable instructions stored therein, which when executed, cause a computer to perform the optical proximity correction method of any one of claims 1-7.
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| CN117311080B (en) * | 2023-11-24 | 2024-02-27 | 全芯智造技术有限公司 | Method, device and medium for splitting layout pattern |
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