CN116655968A - Method for improving performance of friction nano generator - Google Patents
Method for improving performance of friction nano generator Download PDFInfo
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- CN116655968A CN116655968A CN202310586088.9A CN202310586088A CN116655968A CN 116655968 A CN116655968 A CN 116655968A CN 202310586088 A CN202310586088 A CN 202310586088A CN 116655968 A CN116655968 A CN 116655968A
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- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000004205 dimethyl polysiloxane Substances 0.000 claims abstract description 164
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims abstract description 164
- 238000004132 cross linking Methods 0.000 claims abstract description 41
- -1 polydimethylsiloxane Polymers 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 23
- 239000000806 elastomer Substances 0.000 claims abstract description 18
- 229920001971 elastomer Polymers 0.000 claims abstract description 18
- 239000002994 raw material Substances 0.000 claims abstract description 6
- 238000011056 performance test Methods 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 103
- 229910052710 silicon Inorganic materials 0.000 claims description 103
- 239000010703 silicon Substances 0.000 claims description 103
- 229920002120 photoresistant polymer Polymers 0.000 claims description 35
- 239000000243 solution Substances 0.000 claims description 24
- 239000011259 mixed solution Substances 0.000 claims description 20
- 238000004528 spin coating Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 8
- 238000002791 soaking Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 7
- 238000009849 vacuum degassing Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000003491 array Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 238000002444 silanisation Methods 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 230000000295 complement effect Effects 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000005051 trimethylchlorosilane Substances 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 9
- 238000005457 optimization Methods 0.000 abstract description 5
- 238000002474 experimental method Methods 0.000 abstract description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 abstract 10
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 abstract 7
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 abstract 7
- 238000002360 preparation method Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 241000252506 Characiformes Species 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000001566 impedance spectroscopy Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000006884 silylation reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/04—Friction generators
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2383/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
- C08J2383/04—Polysiloxanes
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
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- Manufacture Of Macromolecular Shaped Articles (AREA)
Abstract
The invention relates to a method for improving the performance of a friction nano generator, which is realized by adopting polydimethylsiloxane PDMS films with different crosslinking ratios, wherein the PDMS films adopt polydimethylsiloxane PDMS elastomer and curing agent as raw materials, and the crosslinking ratio of the polydimethylsiloxane PDMS elastomer to the curing agent is 5:1-25:1, the generator comprises an upper substrate, a contact electrode, a textured PDMS film, a back electrode and a lower substrate, and the upper substrate, the contact electrode, the textured PDMS film, the back electrode and the lower substrate are assembled together in sequence, and performance test is performed. Experiments on the generator show that the open-circuit voltage of the generator can be increased by 116.23% through PDMS films with different crosslinking ratios, so that the simple, efficient and low-cost material optimization method is worth widely popularizing.
Description
Technical Field
The invention belongs to the technical field of material modification, and particularly relates to a method for improving performance of a friction nano generator.
Background
In recent years, a friction nano generator TENG is a new energy technology based on contact electrification and electrostatic induction, and is widely applied to some small electronic products, and the working mechanism of the friction nano generator TENG is derived from the friction electrification effect, namely, when two materials with different friction electric polarities are contacted and separated, charge transfer and potential difference are generated. However, the low electrification performance of TENG is a key reason for restricting the wide application of TENG. In the aspect of improving the performance of TENG, material optimization is an important means for improving the performance of TENG, but the current material optimization method is concentrated on the aspects of high dielectric particle filling and the like, but the high dielectric particle filling has the technical problems of complex process, long time consumption and the like, and is not beneficial to large-scale production, so that a method for improving the performance of a friction generator with simple and convenient process needs to be researched, and the current technical problems are solved.
Disclosure of Invention
In order to overcome the above-mentioned problems in the prior art, the present invention provides a method for improving the performance of a friction nano-generator, which is used for solving the above-mentioned problems in the prior art.
The method for improving the performance of the friction nano generator is realized by adjusting the crosslinking ratio of a Polydimethylsiloxane (PDMS) film, wherein the PDMS film adopts a Polydimethylsiloxane (PDMS) elastomer and a curing agent as raw materials, and the crosslinking ratio of the Polydimethylsiloxane (PDMS) elastomer to the curing agent is 5:1-25: the generator comprises an upper substrate, a contact electrode, a textured PDMS film, a back electrode and a lower substrate, wherein the upper substrate, the contact electrode, the textured PDMS film, the back electrode and the lower substrate are assembled together in sequence, and performance test is performed.
In the aspects and any possible implementation manner described above, there is further provided an implementation manner, the preparation method of the PDMS film includes the following steps:
s1, hydrophobization treatment: silanization treatment is carried out on the textured silicon template for standby;
s2, preparing a PDMS mixed solution: mixing and stirring Polydimethylsiloxane (PDMS) and a curing agent according to a mass ratio of 5-25:1, and carrying out vacuum degassing treatment to obtain a PDMS mixed solution;
s3, spin coating and curing: dripping the PDMS mixed solution on the surface of a standby silicon template, spin-coating, heating the spin-coated silicon template at constant temperature for a period of time, and forming a cured PDMS film on the silicon template;
s4, film uncovering: and cooling the silicon template after constant temperature heating to room temperature, and separating the solidified PDMS film from the silicon template to obtain the polydimethylsiloxane PDMS film.
In aspects and any one of the possible implementations described above, there is further provided an implementation, the hydrophobizing treatment includes immersing the silicon template in a solution of trimethylchlorosilane for 5-15min, then washing the silicon template with ethanol and deionized water, respectively, and finally drying the silicon template with nitrogen.
Aspects and any one of the possible implementations as described above, further provide an implementation, where the vacuum degassing in S2 is: and (3) mixing and stirring the polydimethylsiloxane PDMS and the curing agent to form a solution, placing the solution into a vacuum dryer, and vacuum-treating the solution for 20-40min under the pressure of-0.05-0.2 Mpa to remove bubbles in the solution and form a PDMS mixed solution.
The aspects and any possible implementation manner as described above further provide an implementation manner, S3, spin coating and curing, including spin coating by using a spin coater, setting a rotation speed of 50-150rpm, and rotating for 5-15s to uniformly spread the PDMS mixed solution; setting the rotation speed at 200-300rpm, rotating for 50-70s to make PDMS mixed solution uniformly spin-coated on the silicon template, and finally placing the silicon template spin-coated with PDMS mixed solution on a constant temperature heating table at 50-150 ℃ for heating and curing for 10-30min.
In aspects and any possible implementation manner described above, there is further provided an implementation manner, where the diameter of the silicon template is 4 inches, and the surface is provided with a rectangular groove texture, and the groove texture includes 12 texture arrays, and each array size is 20 x 20mm.
In aspects and any one of the possible implementations described above, there is further provided an implementation, the silicon template is manufactured by a method including the steps of:
(1) And (3) designing a silicon template surface texture array: processing 12 texture arrays on a 4 inch silicon wafer, the array size being 20 x 20mm;
(2) Pretreatment: soaking and ultrasonic cleaning the silicon wafer before processing to remove impurities on the surface of the silicon wafer;
(3) Plating photoresist: dehydrating and baking the silicon wafer, spin-coating a tackifier on the surface of the silicon wafer, cooling to room temperature, and then dripping photoresist on the surface of the silicon wafer and baking;
(4) Exposing and developing the photoresist: fixing the baked silicon wafer on a tray of a photoetching machine, performing contact exposure on the photoresist by adopting ultraviolet rays, then soaking the photoresist in a positive photoresist developing solution until the photoresist in an exposure area is completely dissolved, cleaning and baking the silicon wafer after exposure and development are finished, and removing developing solution and moisture;
(5) Etching a silicon wafer: etching the silicon wafer by taking the photoresist as a mask;
(6) Removing the photoresist: and soaking, cleaning and spin-drying the etched silicon wafer to obtain the silicon template with rectangular groove textures.
In aspects and any possible implementation manner described above, there is further provided an implementation manner, wherein a mass ratio of the polydimethylsiloxane PDMS to the curing agent is 5:1, 10:1, 15:1, 20:1, or 25:1.
In aspects and any one of the possible implementations described above, there is further provided an implementation in which the polydimethylsiloxane PDMS film surface is provided with a rectangular groove texture, complementary to the rectangular groove texture of the silicon template.
In aspects and any one of the possible implementations described above, there is further provided an implementation in which the rectangular groove texture of the polydimethylsiloxane PDMS film includes alternating protrusions and grooves.
The beneficial effects of the invention are that
Compared with the prior art, the invention has the following beneficial effects:
the method for improving the performance of the friction nano generator is realized by adjusting the crosslinking ratio of a Polydimethylsiloxane (PDMS) film, wherein the PDMS film adopts a Polydimethylsiloxane (PDMS) elastomer and a curing agent as raw materials, and the crosslinking ratio of the Polydimethylsiloxane (PDMS) elastomer to the curing agent is 5:1-25: the generator comprises an upper substrate, a contact electrode, a PDMS film, a back electrode and a lower substrate, wherein the upper substrate, the contact electrode, the textured PDMS film, the back electrode and the lower substrate are assembled together in sequence, and performance test is performed. Under the same stress, the PDMS film with low crosslinking ratio has smaller strain and higher relative dielectric constant under different test frequencies. According to the invention, the electrification performance of the generator TENG is improved by reducing the crosslinking ratio (mixing ratio of the PDMS elastomer and the curing agent) of Polydimethylsiloxane (PDMS), and experiments show that when the PDMS film prepared by using the crosslinking ratio is used for TENG, the open-circuit voltage of the TENG can be improved, and especially, the PDMS film obtained by using the low crosslinking ratio (5:1) is used as a medium layer of the friction nano generator, so that the open-circuit voltage of the TENG can be improved by 116.23%, and therefore, the simple, efficient and low-cost material optimization method is worth widely popularizing.
Drawings
FIG. 1 is a schematic view of a vacuum degassing process according to the present invention;
FIG. 2 is a schematic diagram of a stress-strain curve of a PDMS film according to the present invention;
FIG. 3 is a graph showing the relative dielectric curves of PDMS films according to the present invention at different crosslinking ratios;
FIG. 4 is a schematic view of rectangular groove texture of PDMS film according to the present invention;
FIG. 5 is a schematic diagram of the friction nano-generator according to the present invention;
FIG. 6 is a schematic graph of the electrification performance of the friction nano-generator of the present invention with different crosslinking ratios;
FIG. 7 is a schematic illustration of the performance of a friction nano-generator of the present invention with different textured protrusion widths;
FIG. 8 is a graphical illustration of the performance of the friction nano-generator of the present invention with different textured groove widths.
Detailed Description
For a better understanding of the present invention, the present disclosure includes, but is not limited to, the following detailed description, and similar techniques and methods should be considered as falling within the scope of the present protection. In order to make the technical problems, technical solutions and advantages to be solved more apparent, the following detailed description will be given with reference to the accompanying drawings and specific embodiments.
It should be understood that the described embodiments of the invention are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The terminology used in the embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in this application and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
The method for improving the performance of the friction nano generator is realized by adjusting the crosslinking ratio of a Polydimethylsiloxane (PDMS) film, wherein the PDMS film adopts a Polydimethylsiloxane (PDMS) elastomer and a curing agent as raw materials, and the crosslinking ratio of the PDMS to the curing agent is 5:1-25: the generator comprises an upper substrate, a contact electrode, a textured PDMS film, a back electrode and a lower substrate, wherein the upper substrate, the contact electrode, the textured PDMS film, the back electrode and the lower substrate are assembled together in sequence, and performance test is performed.
Preferably, the preparation method of the PDMS film comprises the following steps:
s1, hydrophobization treatment: carrying out silanization treatment on the silicon template for standby;
s2, preparing a PDMS mixed solution: mixing and stirring Polydimethylsiloxane (PDMS) and a curing agent according to a mass ratio of 5-25:1, and carrying out vacuum degassing treatment to obtain a PDMS mixed solution;
s3, spin coating and curing: dripping the PDMS mixed solution on the surface of a standby silicon template, spin-coating, heating the spin-coated silicon template at constant temperature for a period of time, and forming a cured PDMS film on the silicon template;
s4, film uncovering: and cooling the silicon template after constant temperature heating to room temperature, and separating the solidified PDMS film from the silicon template to obtain the polydimethylsiloxane PDMS film.
The preparation process comprises the following steps:
1) Hydrophobization treatment: the method comprises the steps of carrying out silanization treatment on a textured silicon template, firstly soaking the silicon template in a trimethylchlorosilane solution for 5-15min, preferably 10min, then respectively adopting ethanol and deionized water to clean the silicon template, and finally drying the silicon template by nitrogen.
2) Preparing PDMS mixed solution: PDMS elastomer and curing agent are mixed according to a certain proportion, the mixing proportion is 5:1-25:1, and the mixture is stirred for 1-10min by a glass rod, and the preferable time is 5min, so that the two components are fully and uniformly mixed. Preferably, the mass ratio of the polydimethylsiloxane PDMS elastomer to the curing agent is specifically 5-9:1, 11-15:1, 15-20:1 or 20-25:1, and the mass ratio is 5: at a low crosslinking ratio, the film has the highest dielectric constant and reduced strain, and as the crosslinking ratio increases, the film is more deformable and the dielectric constant decreases. Preferably, the mass ratio of the polydimethylsiloxane PDMS elastomer to the curing agent is 5:1, 10:1, 15:1, 20:1 or 25:1.
3) Vacuum degassing: the prepared PDMS solution is placed in a vacuum dryer, the pressure is set to be-0.1 MPa, the vacuum treatment is carried out for 20-40min, the preferred time is 30min, and bubbles in the PDMS solution are removed, as shown in figure 1.
4) Spin coating and curing PDMS: the PDMS solution was dropped onto a 4 inch silicon template surface and spin coated using a spin coater. Firstly, setting the rotating speed to be 50-150rpm, rotating for 5-15s, preferably 100rpm, rotating for 10s, and uniformly opening the PDMS solution; the rotation speed is set to 200-300rpm, and the rotation speed is set to 50-70s, preferably 250rpm, and 60s, so that the PDMS solution is uniformly covered on the silicon template. The PDMS-coated silicon template is then heated and cured for 10-30min at a constant temperature of 50-150 ℃, preferably 125 ℃ for 20min.
5) Film uncovering: after the wafer cooled to room temperature, the edges of the PDMS film and the silicon template were scratched with a blade to release the stress in the film. The cured PDMS film was then slowly peeled off the silicon template to obtain a PDMS film.
Pouring the PDMS mixed solution on a silicon template with a texture structure, preparing a film, and stripping to prepare the PDMS film complementary with the texture of the pattern of the silicon template, wherein the PDMS film has a rectangular groove texture.
The silicon template adopted in the step 1) has a diameter of 4 inches, rectangular groove textures are processed on the surface, and standard photoetching, deep reactive ion etching and other processing methods are used, and the preparation method comprises the following steps:
(1) And (3) designing a silicon template surface texture array: processing 12 texture arrays on a 4-inch silicon wafer, wherein the array size is 20 x 20mm, so as to manufacture a contact exposure silicon template corresponding to the texture size of the groove;
(2) Pretreatment: before processing, the silicon wafer is soaked and cleaned for 5-15min, preferably 10min, by using Piranha solution, namely a mixed solution of sulfuric acid and hydrogen peroxide in a volume ratio of 4:1. And then the silicon wafer is ultrasonically cleaned by deionized water for 1-5min, preferably 3min. And spin-drying the silicon wafer on a spin-drying machine to remove impurities on the surface of the silicon wafer. Then the processing procedures of plating photoresist, exposing, developing, etching and removing the photoresist are carried out.
(3) Plating photoresist: the silicon wafer is dehydrated and baked at 100-200 ℃, preferably 150 ℃, and simultaneously hexamethyldisilimide tackifier is spin-coated on the surface of the silicon wafer to ensure good adhesion between the photoresist and the silicon wafer. After the silicon wafer is cooled to room temperature, the photoresist MEGPOSIT SPR 700 is dripped on the surface of the silicon wafer, and spin coating is carried out for 40-80S, preferably 60S, at the rotating speed of 1500-2500r/min, preferably 2000r/min by a spin coater, so that the photoresist is uniformly distributed on the surface of the silicon wafer. And finally, placing the silicon wafer with the photoresist in an oven at 80-100 ℃, preferably 90 ℃ for baking for 5-15min, preferably 10min, so as to remove the moisture in the photoresist.
(4) Exposing and developing the photoresist: the method comprises the steps of fixing a silicon wafer on a tray of a photoetching machine, transferring a pattern on the mask plate to the silicon wafer by using the shape light transmission of the mask plate for manufacturing the silicon wafer, and etching to prepare textured silicon, namely, performing contact exposure on photoresist MEGPOSIT SPR 700 by ultraviolet rays through the mask plate. The photoresist is irradiated on the silicon wafer by ultraviolet rays transmitted between the mask plates, then the photoresist is soaked in a MICROSIT MF CD-26 development type positive photoresist developing solution, and the silicon wafer is taken out and observed until the photoresist in an exposure area is completely dissolved every 4-10s, preferably 5 s. After the exposure and development are finished, the silicon wafer is cleaned by deionized water for 1-5min, preferably 3min, and then the silicon wafer is spin-dried. Finally, the developed wafer is baked in an oven at 80-100deg.C, preferably 90deg.C, for 30min to remove residual developer and moisture.
(5) Etching a silicon wafer: the silicon wafer is etched by using the photoresist as a mask and adopting a deep reactive ion etching technology, wherein the depth is 1-10 mu m, preferably 5 mu m.
(6) Removing the photoresist: soaking the silicon wafer in Piranha solution for 5-15min, preferably 10min to remove photoresist, then cleaning the silicon wafer in deionized water for 1-5min, preferably 3min, and spin-drying to obtain the silicon template with rectangular groove texture.
Preferably, the resulting silicon template is subjected to a silylation treatment prior to use to improve its hydrophilic character. The silanization treatment can enable alkyl to replace-Si-OH groups, so that the adhesion force between the prepared PDMS film and a silicon template substrate is reduced, and the complete PDMS film is conveniently obtained.
As shown in fig. 2, the specific crosslinking ratio of the PDMS elastomer and the curing agent used in the present invention is 5:1. 10: 1. 15: 1. 20: 1. and 25:1, the stress-strain curve of the PDMS film is different along with the different crosslinking ratios, and the crosslinking ratio is 25:1, the strain of the PDMS film increases with the increase of stress, and the strain of the PDMS film with a low crosslinking ratio is smaller with the same stress value, and the strain of the PDMS film increases with the increase of the crosslinking ratio, namely, the crosslinking ratio is 5:1, the strain of the PDMS film is minimum, and the strain of the PDMS film gradually becomes larger along with the increase of the crosslinking ratio, and the crosslinking ratio is 25: at 1, the strain of the PDMS film was maximum.
As shown in fig. 3, the dielectric properties of PDMS films with different crosslinking ratios were measured by broadband dielectric and impedance spectroscopy to obtain the relative dielectric constants of the PDMS films with different crosslinking ratios, which were exemplified by low frequency (hz=100), at a crosslinking ratio of 5: the relative dielectric constant of the PDMS film prepared in the step 1 is more than 3.8; at a crosslinking ratio of 10: the relative dielectric constant of the PDMS film prepared in the step 1 is 3.6-3.7; at a crosslinking ratio of 15:1 and 20: the relative dielectric constant of the PDMS film prepared in the step 1 is 3.5-3.6; at a crosslinking ratio of 25: the relative dielectric constant of the PDMS film prepared in the step 1 is 3.45-3.5. Thus, it can be seen that the crosslinking ratio of 5 to 25 using the present invention: the relative dielectric constant of the PDMS film obtained by the method 1 is higher than that of the PDMS film prepared by the prior art, and the electrification performance of the generator is improved.
The PDMS film obtained by the preparation method of the present invention has rectangular groove texture, and as mentioned above, the rectangular groove texture is related to the silicon template with rectangular groove texture, and is complementary with the pattern texture of the rectangular groove texture on the silicon template. As shown in fig. 4, the micro-nano structure of the rectangular groove texture of the PDMS film comprises protrusions and grooves which are alternately arranged, and the mask plate with the rectangular groove texture of different sizes is obtained by adopting the method for preparing the mask plate, so that the PDMS film with the rectangular groove texture of different sizes is prepared by adopting the mask plate with the rectangular groove texture of different sizes, and the PDMS film with the rectangular groove texture of different sizes is obtained, wherein the width of the texture protrusions of the PDMS film is wb, the width of the grooves is wG, the height of the texture is ht, the widths wG and wb of the protrusions are 5 μm-15 μm, the height of the texture is ht is 5 μm, the interface contact behavior of the generator TENG is influenced by the textures of different sizes, the electrification performance of the generator TENG is further influenced, and the surface texture of the PDMS film obtained under different crosslinking ratios can further enhance the electrification performance of the friction nano generator. As shown in fig. 7, the performance of the friction nano generator can be adjusted by adopting PDMS films with different texture protrusion widths, the open circuit voltage of the friction nano generator is gradually increased along with the increase of the texture protrusion width, for example, when the protrusion width wb is 15 μm, the open circuit voltage output by the generator TENG is maximum and is 35.95V, compared with the generator TENG based on the film with smooth surface in the prior art, the open circuit voltage value is improved by 95.06%, and similarly, the groove width of the texture has similar influence on the performance of the friction nano generator, as shown in fig. 8, when the groove width wG is 5 μm, the open circuit voltage output by the TENG is maximum and is approximately 40V, when the groove width wG is wider, for example, when the groove width wG is 10 μm and 15 μm, the open circuit voltage output by the TENG is smaller than that when the groove width wG is 5 μm. The actual contact area between the friction nano generator interfaces is reduced along with the increase of the groove width, the electrification performance of the TENG is reduced along with the increase of the groove width, the open circuit voltage of the TENG reaches the maximum at the groove width of 5 mu m, the open circuit voltage is 40.06V, and the open circuit voltage is 117.36% higher than that of a smooth surface.
The friction nano generator of the invention, as shown in fig. 5, comprises alternately from top to bottom: the invention provides an upper substrate, a contact electrode, a textured PDMS film prepared by the method, a back electrode and a lower substrate. The upper substrate material and the lower substrate material are polymethyl methacrylate (PMMA), the contact electrode material and the back electrode material are copper foils, the PDMS film is used as a dielectric film, and the sizes of the copper foil electrode and the PDMS dielectric film are 20mm by 20mm. The upper substrate, the contact electrode, the PDMS film prepared by the invention, the back electrode and the lower substrate are assembled together from bottom to bottom, so that the friction nano generator has the structure that: PMMA supports the lower substrate-back copper electrode-modified textured dielectric PDMS film-contact copper electrode-PMMA fixes the upper substrate.
As shown in fig. 6, the generator of the present invention was tested to find that the TENG open circuit voltage was reduced as the crosslinking ratio used in the preparation of the PDMS films was increased based on TENG electrification properties when PDMS films of different crosslinking ratios were used. Wherein, when the crosslinking ratio is 5:1, the open circuit voltage of the TENG output is maximum and is 32.43V. With the increase of the crosslinking ratio, the rigidity of the PDMS film prepared correspondingly is gradually reduced, and the actual contact area of the TENG interface is increased; and as the crosslinking ratio increases, the dielectric constant of the PDMS film gradually decreases, so that the TENG capacitance becomes smaller, the charge density of the TENG surface decreases, and the open circuit voltage of the TENG output decreases. According to the invention, the crosslinking ratio of the PDMS elastomer serving as the raw material for preparing the PDMS film and the curing agent is changed, so that when the PDMS film is used for a generator, the TENG open-circuit voltage of the generator can be increased by 116.23%, and therefore, the simple, efficient and low-cost material optimization method is worth widely popularizing.
While the foregoing description illustrates and describes the preferred embodiments of the present invention, it is to be understood that the invention is not limited to the forms disclosed herein, but is not to be construed as limited to other embodiments, and is capable of numerous other combinations, modifications and environments and is capable of changes or modifications within the scope of the inventive concept as expressed herein, either as a result of the foregoing teachings or as a result of the knowledge or technology of the relevant art. And that modifications and variations which do not depart from the spirit and scope of the invention are intended to be within the scope of the appended claims.
Claims (10)
1. The method for improving the performance of the friction nano generator is characterized by adopting polydimethylsiloxane PDMS films with different crosslinking ratios, wherein the PDMS films adopt the raw materials of polydimethylsiloxane PDMS elastomer and curing agent, and the crosslinking ratio of the polydimethylsiloxane PDMS elastomer to the curing agent is 5:1-25:1, the generator comprises an upper substrate, a contact electrode, a textured PDMS film, a back electrode and a lower substrate, and the upper substrate, the contact electrode, the textured PDMS film, the back electrode and the lower substrate are assembled together in sequence, and performance test is performed.
2. The method for improving performance of a friction nano-generator according to claim 1, wherein the method for preparing the PDMS film comprises the steps of:
s1, hydrophobization treatment: silanization treatment is carried out on the textured silicon template for standby;
s2, preparing a PDMS mixed solution: the polydimethylsiloxane PDMS elastomer and the curing agent are mixed according to the mass ratio of 5: mixing and stirring in a ratio of 1-25:1, and carrying out vacuum degassing treatment to obtain a PDMS mixed solution;
s3, spin coating and curing: dripping the PDMS mixed solution on the surface of a standby silicon template, spin-coating, heating the spin-coated silicon template at constant temperature for a period of time, and forming a cured PDMS film on the silicon template;
s4, film uncovering: and cooling the silicon template after constant temperature heating to room temperature, and separating the solidified PDMS film from the silicon template to obtain the polydimethylsiloxane PDMS film.
3. The method for improving the performance of a friction nano-generator according to claim 2, wherein the hydrophobization treatment comprises immersing the silicon template in a solution of trimethylchlorosilane for 5-15min, then washing the silicon template with ethanol and deionized water, respectively, and finally drying the silicon template with nitrogen.
4. The method of improving performance of a friction nano-generator according to claim 2, wherein the vacuum degassing treatment in S2 comprises: and (3) mixing and stirring the Polydimethylsiloxane (PDMS) elastomer and the curing agent to form a solution, placing the solution into a vacuum dryer, and vacuum-treating the solution for 20-40min under the pressure of-0.05-0.2 Mpa to remove bubbles in the solution and form a PDMS mixed solution.
5. The method for improving the performance of the friction nano generator according to claim 2, wherein the spin coating and curing in the step S3 comprises spin coating by using a spin coater, setting the rotating speed to be 50-150rpm, and rotating for 5-15S to uniformly spread the PDMS mixed solution; setting the rotation speed at 200-300rpm, rotating for 50-70s to make PDMS mixed solution uniformly spin-coated on the silicon template, and finally placing the silicon template spin-coated with PDMS mixed solution on a constant temperature heating table at 50-150 ℃ for heating and curing for 10-30min.
6. The method of improving performance of a friction nano-generator according to claim 2, wherein the silicon template is 4 inches in diameter and is provided with a rectangular groove texture on the surface, the groove texture comprising 12 texture arrays each having a size of 20 x 20mm.
7. The method of improving performance of a friction nano generator according to claim 6, wherein the silicon template is made by a method comprising the steps of:
(1) And (3) designing a silicon template surface texture array: processing 12 texture arrays on a 4 inch silicon wafer, the array size being 20 x 20mm;
(2) Pretreatment: soaking and ultrasonic cleaning the silicon wafer before processing to remove impurities on the surface of the silicon wafer;
(3) Plating photoresist: dehydrating and baking the silicon wafer, spin-coating a tackifier on the surface of the silicon wafer, cooling to room temperature, and then dripping photoresist on the surface of the silicon wafer and baking;
(4) Exposing and developing the photoresist: fixing the baked silicon wafer on a tray of a photoetching machine, performing contact exposure on the photoresist by adopting ultraviolet rays, then soaking the photoresist in a positive photoresist developing solution until the photoresist in an exposure area is completely dissolved, cleaning and baking the silicon wafer after exposure and development are finished, and removing developing solution and moisture;
(5) Etching a silicon wafer: etching the silicon wafer by taking the photoresist as a mask;
(6) Removing the photoresist: and soaking, cleaning and spin-drying the etched silicon wafer to obtain the silicon template with rectangular groove textures.
8. The method of claim 1, wherein the mass ratio of polydimethylsiloxane PDMS elastomer to curing agent is 5:1, 10:1, 15:1, 20:1, or 25:1.
9. The method of claim 7, wherein the polydimethylsiloxane PDMS film surface is provided with rectangular groove texture complementary to the rectangular groove texture of the silicon template.
10. The method of claim 9, wherein the rectangular groove texture of the polydimethylsiloxane PDMS film comprises alternating protrusions and grooves.
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| CN102009947A (en) * | 2010-09-30 | 2011-04-13 | 中国科学院宁波材料技术与工程研究所 | Machining method of regular micro-nano texture gold surface with excellent nanotribology expression |
| WO2017078301A1 (en) * | 2015-11-05 | 2017-05-11 | 고려대학교 산학협력단 | Method of preparing triboelectric film with intagliated, embossed or dual embossed pattern, triboelectric film prepared thereby, and high-performance triboelectric nanogenerator comprising same |
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