CN116633286A - Power amplification module and device - Google Patents
Power amplification module and device Download PDFInfo
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- CN116633286A CN116633286A CN202310565149.3A CN202310565149A CN116633286A CN 116633286 A CN116633286 A CN 116633286A CN 202310565149 A CN202310565149 A CN 202310565149A CN 116633286 A CN116633286 A CN 116633286A
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- 230000003321 amplification Effects 0.000 title claims abstract description 40
- 238000003199 nucleic acid amplification method Methods 0.000 title claims abstract description 40
- 239000003990 capacitor Substances 0.000 claims abstract description 98
- 230000005669 field effect Effects 0.000 claims abstract description 53
- 238000001914 filtration Methods 0.000 claims description 12
- 239000003381 stabilizer Substances 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 abstract description 2
- 230000000903 blocking effect Effects 0.000 description 10
- 230000009286 beneficial effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The present application relates to the field of radio frequency technologies, and in particular, to a power amplification module and a device. The first impedance matching circuit and the second impedance matching circuit are arranged at the input end and the output end of the field effect tube, so that the impedance matching problem between the circuit and the field effect tube can be improved, the expansion of a passband is facilitated, and the support of cross-frequency bands is realized; and the transmitting power and the stability of the power amplifier circuit are improved through three capacitors which are arranged between the two drain electrodes of the field effect transistor in parallel.
Description
Technical Field
The present application relates to the field of radio frequency technologies, and in particular, to a power amplification module and a device.
Background
At present, common power amplification products comprise 1-3MHz, 3-10MHz, 10-35MHz and the like, and the power amplification products support narrow frequency bands, so that the product has higher transmitting power and better stability. When a user needs a power amplification product to support a wider working frequency band, for example, a working frequency band of 1-35 MHz, at this time, because the working frequency band spans multiple frequency bands (medium wave 300kHz-3MHz, short wave 3MHz-30MHz and ultrashort wave 30MHz-300 MHz) at the same time, the problem of circuit impedance matching exists, and the transmitting power and stability of the product are affected.
In this regard, a plurality of power amplifier circuits are generally adopted for integration, that is, a set of power amplifier circuit is designed for each frequency band separately, so that the problems of impedance matching, frequency multiplication limitation and the like are solved, but at the same time, the problem of increased product cost is also brought.
Disclosure of Invention
In order to solve the problem of how to use a set of power amplification circuits (namely, ensuring the constant cost of products), realize cross-frequency-band support and improve the transmitting power and circuit stability of power amplification products, the application provides a power amplification module and a device.
In a first aspect, the present application provides a power amplification module, which adopts the following technical scheme:
the power amplification module comprises a first impedance matching circuit, a field effect transistor and a second impedance matching circuit which are sequentially connected; the radio frequency input signal is transmitted to the field effect transistor after being subjected to impedance conversion treatment by the first impedance matching circuit, is transmitted to the second impedance matching circuit after being amplified by the field effect transistor, and is subjected to impedance conversion treatment by the second impedance matching circuit to obtain a radio frequency output signal; the second impedance matching circuit comprises a second impedance converter and a second matching sub-circuit, the second matching sub-circuit comprises a first capacitor, a second capacitor and a third capacitor, and the first capacitor, the second capacitor and the third capacitor are connected in parallel between two drain electrodes of the field effect transistor; two input ends of the second impedance converter are connected with two drain electrodes of the field effect transistor one by one;
the power amplification module further comprises a feedback circuit; the feedback circuit comprises a first RC sub-circuit and a second RC sub-circuit, wherein the first RC sub-circuit is connected in series between one group of grid electrodes and drain electrodes of the field effect transistor, and the second RC sub-circuit is connected in series between the other group of grid electrodes and drain electrodes of the field effect transistor; and the source electrode of the field effect transistor is grounded.
By adopting the technical scheme, the first impedance matching circuit and the second impedance matching circuit are arranged at the input and output ends of the field effect tube, so that the impedance matching problem between the circuit and the field effect tube can be improved, the expansion of the passband is facilitated, and the support of the cross-frequency band is realized; and three capacitors are arranged between the two drains of the field effect transistor in parallel, and the three capacitors are utilized to realize multistage voltage division, so that the circuit temperature is reduced, and the transmitting power and the stability of the power amplifier circuit are improved.
Optionally, the field effect transistor includes a radio frequency power transistor BLF189XRA.
By adopting the technical scheme, the radio frequency power transistor BLF189XRA has higher transmitting power and high-frequency band support, thereby being beneficial to realizing cross-frequency band support.
Optionally, the power amplification module supports a working frequency range of 1 MHz-35 MHz.
Optionally, the power amplification module further includes an output tuning circuit, where the output tuning circuit includes a fourth capacitor, one end of the fourth capacitor is connected to the output end of the second impedance transformer, and the other end of the fourth capacitor is grounded.
By adopting the technical scheme, the output tuning circuit is utilized to tune the output amplified signal of the second impedance converter, thereby being beneficial to improving the signal output effect.
Optionally, the power amplification module further includes a first matching sub-circuit; the first matching sub-circuit comprises a fifth capacitor, a sixth capacitor, a seventh capacitor and an eighth capacitor; the fifth capacitor and the sixth capacitor are connected in parallel to one drain electrode of the field effect transistor; the seventh capacitor and the eighth capacitor are connected in parallel to the other drain electrode of the field effect transistor; and the other ends of the fifth capacitor, the sixth capacitor, the seventh capacitor and the eighth capacitor are grounded.
By adopting the technical scheme, the multistage pull-down (at least two capacitors) are respectively arranged on the two drain electrodes of the field effect transistor, and each capacitor can adopt a relatively smaller capacitance value to improve the withstand voltage of the matching sub-circuit, thereby being beneficial to improving the stability of the power amplifier circuit.
Optionally, the power amplification module further comprises a power supply circuit; the power supply circuit comprises a direct current power supply, a filtering sub-circuit and a biasing sub-circuit; after the direct-current power supply is processed by the filtering sub-circuit, providing required voltage for the drain electrode of the field effect transistor; and the direct current power supply is processed by the bias sub-circuit to provide a required bias current for the grid electrode of the field effect transistor.
By adopting the technical scheme, the filter sub-circuit and the bias sub-circuit are arranged to process the direct current power supply, and then the power amplifier circuit is provided with the required voltage and bias current.
Optionally, the filtering sub-circuit includes 4 non-polar capacitors and 1 polar capacitor connected in parallel with the dc power supply, one end of the 4 non-polar capacitors is connected with the dc power supply through a first inductor, and the other end of the 4 non-polar capacitors is grounded; the positive poles of the 1 polar capacitors are connected with the direct current power supply through the first inductor, and the negative poles of the 1 polar capacitors are grounded.
By adopting the technical scheme, the set 4 nonpolar capacitors are utilized to carry out multistage filtering, so that high-frequency filtering is realized; the polar capacitor is utilized to filter the low-frequency signal of the power supply, so that the fluctuation of the power supply signal can be restrained, and the stability of the power supply is improved.
Optionally, the bias sub-circuit comprises a voltage stabilizer, an adjustable resistor and a fixed resistor which are sequentially connected in series; the input end of the voltage stabilizer is connected with the direct current power supply, the output end of the voltage stabilizer is connected with the adjustable resistor, and the required bias current is provided for the grid electrode of the field effect transistor by adjusting the resistance value of the adjustable resistor.
By adopting the technical scheme, the power stability can be improved by using the voltage stabilizer, and the adjustable resistor can better meet the bias current required by the field effect transistor.
Optionally, the power amplification module further includes a blocking circuit, the blocking circuit includes a second inductor and a ninth capacitor, a blocking input signal is connected with the negative electrode of the fixed resistor through the second inductor, one end of the ninth capacitor is connected with the blocking input signal, and the other end of the ninth capacitor is grounded.
Through adopting above-mentioned technical scheme, the form of locking circuit adoption inductance+electric capacity, inductance can pull down voltage signal to 0, realizes completely locking, and the effect of locking is better (because there is residual voltage in the diode, can't block completely) for the locking form of diode+electric capacity that the conventionality adopted.
In a second aspect, the present application provides a power amplifying device, which adopts the following technical scheme:
a power amplifying device comprising the power amplifying module according to any one of claims 1 to 9.
In summary, the application has at least the following beneficial technical effects:
1. the impedance matching problem between the circuit and the field effect transistor can be improved through the first impedance matching circuit and the second impedance matching circuit which are arranged at the input end and the output end of the field effect transistor; and the three capacitors arranged between the two drains of the field effect transistor in parallel are beneficial to improving the transmitting power and the stability of the power amplifier circuit.
Blf189xra has higher transmit power and high band support, thereby facilitating cross-band support.
Drawings
FIG. 1 is a block diagram of a power amplifier module in an embodiment of the application;
FIG. 2 is a circuit diagram of a power amplifying module according to an embodiment of the present application;
fig. 3 is a block diagram of a power amplifying device according to an embodiment of the present application.
Detailed Description
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
The embodiment of the application discloses a power amplification module, referring to fig. 1, which comprises a first impedance matching circuit 10, a field effect transistor 20 and a second impedance matching circuit 30, wherein a radio frequency input signal is subjected to impedance conversion through the first impedance matching circuit 10 so as to realize matching with the impedance of the field effect transistor 20; and then transmitted to the field effect tube 20 for power amplification treatment, and the amplified power is output to the second impedance matching circuit 30, and the output impedance of the field effect tube 20 is matched by the second impedance matching circuit 30. Therefore, the impedance matching problem of the field effect transistor 20 and the power amplifier circuit is solved to a certain extent, the expansion of the passband is facilitated, and the cross-band support is realized.
In order to better realize impedance matching between the output of the field effect transistor and the circuit, the second impedance matching circuit 30 not only includes the second impedance transformer 32 for realizing impedance transformation, but also includes a second matching sub-circuit 31 between the second impedance transformer 32 and the output end of the field effect transistor 20 for improving the impedance matching effect of the second impedance transformer 32.
Specifically, the second matching sub-circuit 31 is composed of three capacitors connected in parallel between the two drains of the field effect transistor 20. Three capacitors arranged between two drains of the field effect transistor in parallel are utilized to realize multistage voltage division, thereby being beneficial to reducing the circuit temperature and further being beneficial to improving the transmitting power and the stability of the power amplifier circuit
In the embodiment of the application, the field effect transistor 20 is a radio frequency power transistor BLF189XRA, and has higher transmitting power and high-frequency band support, so that the working frequency band of 1 MHz-35 MHz can be realized, and the frequency band range is expanded.
The rf power transistor BLF189XRA has two gates, two drains and a source, wherein the first impedance matching circuit 10 is formed by an input impedance converter 11, the input of the input impedance converter 11 being connected to the rf input signal and the output being connected to the gate of the rf power transistor BLF189XRA.
Specifically, the input impedance converter 11 includes two output pins, which are respectively connected to two gates of the rf power transistor BLF189XRA, that is, one output pin of the input impedance converter 11 is connected to one gate of the rf power transistor BLF189XRA, and the other output pin of the input impedance converter 11 is connected to the other gate of the rf power transistor BLF189XRA.
After the radio frequency input signal is subjected to impedance conversion by the input impedance converter 11, the radio frequency input signal is output to the radio frequency power transistor BLF189XRA for amplification treatment, then impedance matching is improved by an impedance matching circuit (namely a second matching sub-circuit 31) connected in parallel between drain electrodes, two drain electrode outputs are respectively connected with two input ends of the second impedance converter 32, output impedance is matched by the second impedance converter 32, the problem of circuit impedance matching of a cross-band power amplification product is solved, and the transmitting power and circuit stability of the power amplification product are improved.
In the embodiment of the present application, a feedback circuit is further disposed between the gate and the drain of the field effect transistor 20. Specifically, the feedback circuit includes two branches, namely a first RC sub-circuit 41 and a second RC sub-circuit 42. Two RC sub-circuits are respectively arranged between two groups of grid electrodes and drain electrodes of the field effect transistor 20, so that the low-frequency gain of the field effect transistor is improved.
Specifically, the rf power transistor BLF189XRA includes a gate 1, a gate 2, a drain 1, and a drain 2, wherein a first RC sub-circuit 41 is connected in series between the drain 1 and the gate 1, and a second RC sub-circuit 42 is connected in series between the drain 2 and the gate 2. By arranging the feedback circuit, the problems of poor frequency response, large fluctuation and the like of the low-frequency input of the radio-frequency power transistor BLF189XRA are solved, and the wider frequency band is widened.
In the example of the application, the source of the rf power transistor BLF189XRA is grounded.
In an alternative embodiment of the present application, the power amplification module further includes a power circuit to provide the required voltage and current to the fet 20. With continued reference to fig. 1, the power supply circuit includes a dc power supply 51, a filter sub-circuit 52, and a bias sub-circuit 53; the dc power supply 51 provides a required voltage to the drain of the fet 20 after being processed by the filter sub-circuit 52; the dc power supply 51 provides the required bias current to the gate of the fet 20 after processing by the bias subcircuit 53.
In an alternative embodiment of the present application, the DC power supply 51 may be flexibly selected according to practical requirements, for example, dc+ V, DC +48v.
The filter sub-circuit 52 and the bias sub-circuit 53 can flexibly set specific circuit structures according to actual requirements, for example, the filter sub-circuit 52 can only perform filter processing on the dc power supply 51, and can meet the drain voltage requirement of the fet 20. Similarly, the bias sub-circuit 52 can divide the voltage of the dc power supply 51 to meet the bias current requirement of the gate of the fet 20. The embodiments of the present application are not limited in this regard.
It should be understood that the specific component signals and parameters of the power amplification module may be flexibly selected according to the specific performance parameters of the power amplification module, which will not be described herein.
For a better understanding of the technical solution of the present application, the following describes the power amplifying module in detail with reference to a specific circuit diagram, please refer to fig. 2:
one input pin of the input impedance converter T1 is connected with a radio frequency input signal, and the other input pin is grounded; the two output pins are connected with two gates of the radio frequency power transistor BLF189XRA in a one-to-one correspondence manner so as to transmit the radio frequency signal after impedance transformation to the radio frequency power transistor BLF189XRA.
The rf power transistor BLF189XRA is configured to process the rf signal and transmit the processed rf signal to the output impedance transformer T2 through two drains, and the two drains of the rf power transistor BLF189XRA are connected to two input pins of the output impedance transformer T2.
One output pin of the output impedance converter T2 is grounded, and the other output pin is used for outputting the processed radio frequency signal.
In an alternative embodiment of the application, the input impedance transformer T1 has an input/output coil turns ratio of 2:1 and an impedance ratio of 4:1; the turns ratio of the input coil and the output coil of the output impedance converter T2 is 3:1, and the impedance ratio is 9:1. The method can be flexibly selected according to actual requirements.
The other output pin of the output impedance converter T2 is also provided with an output tuning circuit in parallel, so that the impedance conversion and the output tuning circuit are mutually tuned to perform signal output so as to better match the output impedance. The output tuning circuit comprises a capacitor C23, one end of the capacitor C23 is connected with a corresponding output pin of the output impedance converter T2, and the other end of the capacitor C23 is grounded.
A group of RC feedback circuits including R7 and C21 and R8 and C22 are respectively arranged in series between two groups of grid drains of the radio frequency power transistor BLF189XRA so as to solve the problems of poor frequency response and large fluctuation of low-frequency input of the radio frequency power transistor BLF189XRA.
Two parallel capacitors including C17, C18, C19 and C20 are respectively connected to two drains of the radio frequency power transistor BLF189XRA, and the other ends of the four capacitors are grounded. The multistage pull-down (at least two capacitors) are respectively arranged on the two drain electrodes of the field effect transistor, so that each capacitor can adopt a relatively smaller capacitance value to improve the withstand voltage of the matching sub-circuit, and the stability of the power amplifier circuit is further improved.
And a group of RC circuits comprising C24, R9, C25 and R10 are respectively connected in parallel on the two groups of feedback circuits so as to improve the low-frequency self-excitation of the radio frequency power transistor BLF189XRA and improve the circuit stability.
The +48V DC power supply is processed by the filter sub-circuit to provide the required voltage to the drain of the RF power transistor BLF189XRA. The filter sub-circuit comprises 4 nonpolar capacitors and 1 polar capacitor, wherein the 4 nonpolar capacitors are connected in parallel with the direct current power supply, one end of each of the 4 nonpolar capacitors (comprising C9, C10, C11 and C12) is connected with the direct current power supply through an inductor L2, and the other ends of the 4 nonpolar capacitors are grounded; the set 4 nonpolar capacitors are utilized to carry out multistage filtering, so that high-frequency filtering is realized; the positive electrode of the polar capacitor (namely C13) is connected with a direct current power supply through an inductor L2, the negative electrode of the polar capacitor is grounded, and the polar capacitor is utilized to filter low-frequency signals of the power supply; therefore, the fluctuation of the power supply signal can be restrained, and the stability of the power supply can be improved.
The +48V DC power supply, after being processed by the bias subcircuit, provides the required bias current for the gate of the RF power transistor BLF189XRA.
The bias sub-circuit comprises a voltage stabilizer 78M05, an adjustable resistor R4 and a fixed resistor (comprising R3) which are sequentially connected in series; the input end of the voltage stabilizer 78M05 is connected with a direct current power supply, so that the stability of the power supply is improved, and the fluctuation of the power supply is reduced; the output of the voltage regulator 78M05 is connected to an adjustable resistor R4. The gate of the rf power transistor BLF189XRA is provided with the desired bias current by adjusting the resistance of the adjustable resistor R4.
The power amplification module further comprises a blocking circuit, the blocking circuit comprises an inductor L1 and a capacitor C3, and a blocking input signal is connected with the cathode of the fixed resistor R3 through the inductor L1; one end of the capacitor C3 is connected with the blocking input signal, and the other end is grounded. The inductor L1 can pull down the voltage signal to 0, so that complete blocking is realized, and the blocking effect is better.
In an alternative embodiment of the application, a polar capacitor C8, a capacitor C7, a resistor R5 and a resistor R6 are connected in parallel between the +48V direct current power supply and the bias subcircuit; the capacitor C8 is used for filtering low frequency of the power supply, and the capacitor C7 is used for filtering high frequency of the power supply; r5 and R6 are used to divide the dc voltage of 48V to 24V, thereby meeting the safe voltage requirement (not higher than 36V) of the voltage regulator 78M 05.
In an alternative embodiment of the present application, the power amplification module further includes capacitors C1, C2, C4, and C5, which are multistage filter capacitors of the bias sub-circuit 53, and may be configured such that the capacitor C1 is used to filter high frequencies, the capacitor C2 is used to filter low frequencies, the capacitor C4 is used to filter low frequencies, and the capacitor C5 is used to filter high frequencies, so as to implement multistage filtering; thereby suppressing the bias voltage fluctuation and causing the problem of power jitter.
The power amplifying device provided by the application can realize cross-frequency band support, and compared with the conventional multi-set power amplifying circuit integration, the circuit structure of the scheme is simpler and the cost is lower; meanwhile, the circuit of the scheme has higher stability, can be widely applied in the field of power amplification, and is particularly suitable for products such as AM shortwave emission, radio frequency power sources, annular accelerators, radio frequency power sources and the like.
Based on the same design concept, the embodiment also discloses a power amplifying device.
Referring to fig. 3, the power amplifying device includes the power amplifying module described above, and the power amplifying device can be applied to products such as an AM short wave transmitter, a radio frequency power source, a ring accelerator, a radio frequency power source, and the like.
The foregoing embodiments are only used to describe the technical solution of the present application in detail, but the descriptions of the foregoing embodiments are only used to help understand the method and the core idea of the present application, and should not be construed as limiting the present application. Variations or alternatives, which are easily conceivable by those skilled in the art, are included in the scope of the present application.
Claims (10)
1. The power amplification module is characterized by comprising a first impedance matching circuit, a field effect transistor and a second impedance matching circuit which are sequentially connected; the radio frequency input signal is transmitted to the field effect transistor after being subjected to impedance conversion treatment by the first impedance matching circuit, is transmitted to the second impedance matching circuit after being amplified by the field effect transistor, and is subjected to impedance conversion treatment by the second impedance matching circuit to obtain a radio frequency output signal; the second impedance matching circuit comprises a second impedance converter and a second matching sub-circuit, the second matching sub-circuit comprises a first capacitor, a second capacitor and a third capacitor, and the first capacitor, the second capacitor and the third capacitor are connected in parallel between two drain electrodes of the field effect transistor; two input ends of the second impedance converter are connected with two drain electrodes of the field effect transistor one by one;
the power amplification module further comprises a feedback circuit; the feedback circuit comprises a first RC sub-circuit and a second RC sub-circuit, wherein the first RC sub-circuit is connected in series between one group of grid electrodes and drain electrodes of the field effect transistor, and the second RC sub-circuit is connected in series between the other group of grid electrodes and drain electrodes of the field effect transistor; and the source electrode of the field effect transistor is grounded.
2. The power amplification module of claim 1, wherein the field effect transistor comprises a radio frequency power transistor BLF189XRA.
3. The power amplification module of claim 1, wherein the power amplification module supports an operating frequency range of 1MHz to 35MHz.
4. The power amplification module of claim 1, further comprising an output tuning circuit comprising a fourth capacitor, one end of the fourth capacitor being connected to the output of the second impedance transformer, the other end of the fourth capacitor being grounded.
5. The power amplification module of claim 1, further comprising a first matching sub-circuit; the first matching sub-circuit comprises a fifth capacitor, a sixth capacitor, a seventh capacitor and an eighth capacitor; the fifth capacitor and the sixth capacitor are connected in parallel to one drain electrode of the field effect transistor; the seventh capacitor and the eighth capacitor are connected in parallel to the other drain electrode of the field effect transistor; and the other ends of the fifth capacitor, the sixth capacitor, the seventh capacitor and the eighth capacitor are grounded.
6. The power amplification module of claim 1, further comprising a power circuit; the power supply circuit comprises a direct current power supply, a filtering sub-circuit and a biasing sub-circuit; after the direct-current power supply is processed by the filtering sub-circuit, providing required voltage for the drain electrode of the field effect transistor; and the direct current power supply is processed by the bias sub-circuit to provide a required bias current for the grid electrode of the field effect transistor.
7. The power amplification module of claim 6, wherein the filter sub-circuit comprises 4 non-polar capacitors and 1 polar capacitor connected in parallel with the dc power supply, one end of the 4 non-polar capacitors is connected with the dc power supply through a first inductor, and the other end of the 4 non-polar capacitors is grounded; the positive poles of the 1 polar capacitors are connected with the direct current power supply through the first inductor, and the negative poles of the 1 polar capacitors are grounded.
8. The power amplification module of claim 6, wherein the bias subcircuit comprises a voltage regulator, an adjustable resistor, and a fixed resistor in series in sequence; the input end of the voltage stabilizer is connected with the direct current power supply, the output end of the voltage stabilizer is connected with the adjustable resistor, and the required bias current is provided for the grid electrode of the field effect transistor by adjusting the resistance value of the adjustable resistor.
9. The power amplification module of claim 8, further comprising a lockout circuit comprising a second inductor and a ninth capacitor, a lockout input signal coupled to a negative electrode of the fixed resistor via the second inductor, one end of the ninth capacitor coupled to the lockout input signal, and the other end of the ninth capacitor coupled to ground.
10. A power amplifying device, characterized in that it comprises a power amplifying module according to any of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310565149.3A CN116633286A (en) | 2023-05-18 | 2023-05-18 | Power amplification module and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310565149.3A CN116633286A (en) | 2023-05-18 | 2023-05-18 | Power amplification module and device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116633286A true CN116633286A (en) | 2023-08-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310565149.3A Pending CN116633286A (en) | 2023-05-18 | 2023-05-18 | Power amplification module and device |
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| Country | Link |
|---|---|
| CN (1) | CN116633286A (en) |
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2023
- 2023-05-18 CN CN202310565149.3A patent/CN116633286A/en active Pending
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