CN116575095A - Cathode-anode independent wafer electroplating equipment - Google Patents
Cathode-anode independent wafer electroplating equipment Download PDFInfo
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- CN116575095A CN116575095A CN202310628393.XA CN202310628393A CN116575095A CN 116575095 A CN116575095 A CN 116575095A CN 202310628393 A CN202310628393 A CN 202310628393A CN 116575095 A CN116575095 A CN 116575095A
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- 238000009713 electroplating Methods 0.000 title claims abstract description 54
- 239000012528 membrane Substances 0.000 claims abstract description 34
- 150000002500 ions Chemical class 0.000 claims abstract description 33
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 32
- 239000007788 liquid Substances 0.000 claims abstract description 27
- 238000000926 separation method Methods 0.000 claims abstract description 20
- 238000007747 plating Methods 0.000 claims description 40
- 230000000712 assembly Effects 0.000 claims description 8
- 238000000429 assembly Methods 0.000 claims description 8
- 239000003814 drug Substances 0.000 claims description 7
- 102000004310 Ion Channels Human genes 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 4
- 230000009471 action Effects 0.000 claims description 3
- UUWCBFKLGFQDME-UHFFFAOYSA-N platinum titanium Chemical compound [Ti].[Pt] UUWCBFKLGFQDME-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 4
- 238000005192 partition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
- C25D17/12—Shape or form
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The application discloses wafer electroplating equipment with independent cathodes and anodes, which comprises an electroplating tank containing electroplating liquid, an electroplating tank formed with an electroplating cavity, a separation assembly and an anode assembly, wherein the electroplating tank is provided with an open mouth from the top; the separation component is inserted into the electroplating cavity and separates the electroplating cavity into an anode cavity sealed from the circumferential direction and a cathode cavity communicated with the opening, and comprises an ion membrane, a first grating plate and a second grating plate which are respectively arranged on two opposite sides of the ion membrane, wherein a plurality of first grating holes and a plurality of second grating holes are correspondingly formed on the first grating plate and the second grating plate; the anode component comprises a circulating pipeline communicated with the anode cavity and a conductive column inserted in the anode cavity and communicated with the positive electrode of the power supply. The application can maintain the content of metal ions in the whole anode cavity, thereby ensuring the stable supply of the metal ions in the whole electroplating process and effectively improving the electroplating quality; meanwhile, the consumption of the anode plate can be saved, and the production cost is effectively reduced.
Description
Technical Field
The application belongs to the technical field of semiconductor processing, and particularly relates to wafer electroplating equipment with independent anode and cathode.
Background
Wafer refers to a silicon wafer used for manufacturing silicon semiconductor circuits, the original material of which is silicon. The high-purity polycrystalline silicon is dissolved and then doped with silicon crystal seed, and then slowly pulled out to form cylindrical monocrystalline silicon. The silicon crystal bar is ground, polished and sliced to form a silicon wafer. Further, a conductive metal layer is electroplated on the wafer, and the conductive metal layer is processed to form the conductive circuit.
At present, a wafer electroplating device generally comprises an electroplating tank for placing electroplating solution, a wafer carrier for fixing a wafer, an anode plate and an electric component, wherein the wafer carrier and the anode plate are respectively inserted into the electroplating solution in the electroplating tank, and the electric component is respectively connected with the wafer and the anode plate, so that the wafer in the electroplating tank is a cathode and the anode plate is an anode, and electrolytic reaction is generated in the electroplating tank, and thus metal ions in the electroplating solution can be gradually adhered to the surface of the wafer along with the progress of the electrolytic reaction to form an electroplated layer.
However, in the actual plating process, the existing plating apparatus has the following drawbacks:
1. the anode plate adopted is gradually consumed and thinned along with the progress of the electrolytic reaction, so that the problem of unstable metal ion supply is easy to occur, and the quality of a later-stage coating is poor;
2. the anode plate needs to be replaced when not completely consumed, so that waste is caused, and the cost is high.
Disclosure of Invention
The application aims to solve the technical problem of overcoming the defects of the prior art and providing brand-new wafer electroplating equipment with independent anode and cathode.
In order to solve the technical problems, the application adopts the following technical scheme:
a wafer electroplating device with independent anode and cathode comprises an electroplating tank with an electroplating cavity, a separation component and an anode component, wherein the electroplating tank is provided with an opening from the top; the separation component is inserted into the electroplating cavity and separates the electroplating cavity into an anode cavity which is sealed in the circumferential direction and a cathode cavity which is communicated with the opening, and the separation component comprises an ion membrane, a first grating plate and a second grating plate which are respectively arranged on two opposite sides of the ion membrane, wherein a plurality of first grating holes and a plurality of second grating holes are correspondingly formed on the first grating plate and the second grating plate, and metal ion channels are formed among the plurality of first grating holes, the ion membrane and the plurality of second grating holes; the wafer carrier loaded with the wafer passes through the open mouth from top to bottom and is inserted into the cathode cavity, the wafer carrier is communicated with the negative electrode of the power supply, the anode component comprises a circulating pipeline communicated with the anode cavity and a conductive column inserted into the anode cavity and communicated with the positive electrode of the power supply, wherein the liquid medicine containing metal ions circularly flows in the circulating pipeline and the anode cavity, the conductive column is immersed in the liquid medicine, and under the action of current, the metal ions enter the cathode cavity from the anode cavity through a metal ion channel and are plated on the surface of the wafer.
Preferably, the first grating plate and the second grating plate are fixedly connected, and the ion membrane is pressed between the first grating plate and the second grating plate. Here, the surface of the ion membrane can be kept flat, so that the trafficability of corresponding metal ions can be improved.
Preferably, the first grating plate is located at one side of the ion membrane close to the anode cavity, the second grating plate is located at one side of the ion membrane close to the cathode cavity, the first grating holes and the second grating holes are all elongated through holes extending up and down, and the first grating holes and the second grating holes are respectively arranged at intervals side by side, wherein the width of each first grating hole is larger than that of each second grating hole. In this case, the gate holes narrowed stepwise prevent the metal ions from being diffused by the influence of the current distribution unevenness during the passage.
Preferably, the first grating plate, the second grating plate and the ion membrane are all round, and the central lines of the first grating plate, the second grating plate and the ion membrane are overlapped.
Preferably, the diameters of the first grating plate, the second grating plate and the ion membrane are d1, d2 and d3 in sequence, wherein d1 is more than d3 and less than or equal to d2; and/or the metal ion passing area formed by the first grating plate is s1, and the metal ion passing area formed by the second grating plate is s2, wherein s1=s2. Here, through the reasonable size relation among the first grating plate, the second grating plate and the ion membrane, the movement of metal ions is effectively limited, so that the stability of the electroplating process is improved.
Preferably, the electroplating cavity is a rectangular cavity, two groups of separation assemblies are arranged, an anode cavity is formed between the two groups of separation assemblies and two opposite side walls of the electroplating cavity respectively, and the cathode cavity is positioned between the two groups of separation assemblies. The plating method is applicable to a wafer carrier having wafers mounted on both surfaces thereof, and can simultaneously plate two wafers.
Preferably, the electroplating bath comprises a bath body with an open top and bath plates respectively connected to two opposite sides of the bath body, wherein an electroplating cavity is formed between the bath body and the two bath plates, each bath plate is inwards sunken and forms an anode bath, and each group of separation components is connected to the notch of the corresponding anode bath in a sealing way. The structure is simple, and the installation and the implementation are convenient.
Specifically, the top of the anode tank is arranged in an upward protruding mode, the bottom of the anode tank is arranged in a downward protruding mode, and the circulating pipeline comprises a liquid inlet pipeline which is formed on the tank plate and communicated with the bottom of the anode tank and a liquid outlet pipeline which is formed on the tank plate and communicated with the top of the anode tank. Here, by the protrusions at the top and bottom of the anode tank, stability of the chemical liquid when entering and exiting the anode cavity can be ensured.
Preferably, the anode assembly further comprises an insoluble anode plate disposed within the anode cavity and in communication with the conductive post. Here, the conductive current in the anode cavity is uniformly distributed by the cooperation of the conductive column and the insoluble anode plate.
Specifically, the anode plate adopts a platinum titanium net, and the surface of the anode plate is arranged at intervals with the cavity wall of the anode cavity. Ensure that the anode plate can be fully immersed in the liquid medicine containing metal ions.
Due to the implementation of the technical scheme, compared with the prior art, the application has the following advantages:
the wafer electroplating equipment in the prior art has the defects that the plating layer forming effect is poor due to unstable metal ion supply along with the consumption of a soluble anode plate and the cost is high due to large anode plate consumption; meanwhile, the consumption of the anode plate can be saved, and the production cost is effectively reduced.
Drawings
FIG. 1 is a schematic view of a wafer and wafer carrier of the present application;
FIG. 2 is a schematic diagram of a wafer plating apparatus (not shown in the plating bath) according to embodiment 1 of the present application;
FIG. 3 is an exploded view of FIG. 2;
FIG. 4 is a schematic view of the slot plate of FIG. 3;
FIG. 5 is a schematic top view of FIG. 4;
FIG. 6 is a schematic cross-sectional view of A-A of FIG. 5;
FIG. 7 is a schematic view in section B-B of FIG. 5;
FIG. 8 is an exploded view of the partition assembly of FIG. 3;
fig. 9 is a schematic exploded view (partially omitted) of a wafer plating apparatus according to embodiment 2 of the present application;
wherein: J. a wafer carrier; y, wafer;
1. plating bath; 10. a tank body; 11. a trough plate; 110. an anode groove; q, electroplating cavity; q 1, anode cavity; q2, cathode cavity; k1, opening; k2, a liquid inlet;
2. a partition assembly; 20. an ionic membrane; 21. a first grating plate; 211. a first grid hole; 22. a second grating plate; 222. a second grid hole;
3. an anode assembly; 30. a circulation pipe; 300. a liquid inlet pipe; 301. a liquid outlet pipe; 31. a conductive post; 32. an anode plate.
Detailed Description
In order that the above objects, features and advantages of the application will be readily understood, a more particular description of the application will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. The present application may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the application, whereby the application is not limited to the specific embodiments disclosed below.
In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present application, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present application, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
It will be understood that when an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.
Example 1
As shown in fig. 1 to 8, a wafer Y is fixed on each of the front and rear sides of a wafer carrier J in the present embodiment, and the wafer plating apparatus in the present embodiment is used for simultaneously performing copper plating on the surface to be plated on the wafer Y on the front and rear sides of the wafer carrier J, where the wafer carrier J has a connection end for connecting with a power cathode. The wafer plating apparatus of the present embodiment includes a plating cell containing a plating solution, a plating tank 1 formed with a plating chamber q, a partition member 2, and an anode member 3.
In particular, the plating cell may be any conventional configuration of plating cell for supplying a plating solution into the plating chamber q.
In this example, the plating tank 1 forms an opening k 1 from the top and a liquid inlet k2 for plating liquid from the bottom, and during plating, the plating tank 1 is inserted into the plating tank, and the plating liquid overflows into the plating tank from the opening k 1 to form a circulation after entering the plating chamber q from the plating tank through the liquid inlet k 2.
Specifically, the plating tank 1 includes a tank body 10 having an opening k 1 formed from the top and a liquid inlet k2 formed from the bottom, and tank plates 11 respectively connected to opposite sides of the tank body 10, wherein a rectangular plating chamber q is formed between the tank body 10 and the two tank plates 11, and an inner wall of each tank plate 11 is recessed and an anode tank 110 is formed.
In this example, the separation component 2 is inserted into the electroplating cavity q and separates the electroplating cavity q into a cathode cavity q2 which is sealed from the circumferential direction and is respectively communicated with the opening k 1 and the liquid inlet k2, specifically, the separation component 2 has two groups and is correspondingly and hermetically connected at the notch of each anode groove 110, wherein the anode cavity q 1 is formed between each group of separation components 2 and the corresponding anode groove 110, and the cathode cavity q2 is positioned between the two groups of separation components 2.
Each group of the separation assemblies 2 comprises an ion membrane 20, a first grating plate 21 and a second grating plate 22 respectively arranged on two opposite sides of the ion membrane 20, wherein a plurality of first grating holes 211 and a plurality of second grating holes 222 are correspondingly formed on the first grating plate 21 and the second grating plate 22, and metal ion channels are formed among the plurality of first grating holes 211, the ion membrane 20 and the plurality of second grating holes 222.
Meanwhile, the first grating plate 21, the ion membrane 20 and the second grating plate 22 are serially connected and fixed in a dependent manner through bolt pieces, the ion membrane 20 is pressed between the first grating plate 21 and the second grating plate 22, the first grating plate 21 is positioned at one side of the ion membrane 20 close to the anode cavity q 1, and the second grating plate 22 is positioned at one side of the ion membrane 20 close to the cathode cavity q 2; the first grating plate 21, the second grating plate 22 and the ion membrane 20 are all round, the central lines of the first grating plate 21, the second grating plate 22 and the ion membrane 20 are overlapped, the diameters of the first grating plate 21, the second grating plate 22 and the ion membrane 20 are d1, d2 and d3 in sequence, wherein d1 is less than d3 and less than or equal to d2, the metal ion passing area formed by the first grating plate 21 is s1, and the metal ion passing area formed by the second grating plate 22 is s2, wherein s1=s2.
Further, the first grid holes 211 and the second grid holes 222 are elongated through holes extending up and down, and the first grid holes 211 and the second grid holes 222 are respectively arranged at intervals side by side, wherein the width of each first grid hole 211 is larger than the width of each second grid hole 222.
In this example, the anode assembly 3 includes a circulation pipe 30 connected to the anode cavity q 1, a conductive post 31 inserted into the anode cavity q 1 and connected to the positive electrode of the power supply, and during electroplating, the wafer carrier J loaded with the wafer Y passes through the opening k 1 from top to bottom and is inserted into the cathode cavity q2, and the wafer carrier J is connected to the negative electrode of the power supply, the chemical solution containing metal ions circulates in the circulation pipe 30 and the anode cavity q 1 through the operation of an external chemical solution tank and a pump, the conductive post 31 is immersed in the chemical solution, and under the action of current, the metal ions enter the cathode cavity q2 from the anode cavity q 1 through a metal ion channel and are plated on the surface of the wafer Y.
Specifically, the anode tank 110 has a top portion protruding upward and a bottom portion protruding downward, and the circulation duct 30 includes a liquid inlet duct 300 formed on the tank plate 11 and communicating with the bottom portion of the anode tank 110, and a liquid outlet duct 301 formed on the tank plate 11 and communicating with the top portion of the anode tank 110.
In addition, the embodiment further includes a stirring plate driven by a motor to reciprocate up and down in the cathode cavity q2, which is a conventional technical means and will not be described herein.
In summary, the present embodiment has the following advantages:
1. the content of metal ions in the whole anode cavity can be maintained through the circulating flow of the liquid medicine containing the metal ions, so that the stable supply of the metal ions in the whole electroplating process is ensured, and the electroplating quality is effectively improved; meanwhile, the consumption of anode plate additives can be saved, and the production cost is effectively reduced;
2. through the grid holes narrowed step by step, the edge effect generated by diffusion caused by uneven current distribution when metal ions pass is avoided, so that the whole electric field distribution is influenced;
3. through reasonable size relations among the first grating plate, the second grating plate and the ion membrane, effective limitation is formed on movement of metal ions, so that stability and consistency of an electroplating process are improved;
4. through protruding at the top and the bottom of the anode tank, the stability of the liquid medicine entering and discharging the anode cavity can be ensured.
Example 2
As shown in fig. 9, the wafer plating apparatus of this embodiment has substantially the same structure as that of embodiment 1, and differs from this embodiment in that:
the anode assembly 3 of the present embodiment further includes an insoluble anode plate 32 disposed within the anode cavity q 1 and in communication with the conductive post 31.
Specifically, the anode plate 32 is a platinum titanium mesh, and the surface of the anode plate 32 is spaced from the wall of the anode cavity q 1.
The present application has been described in detail with the purpose of enabling those skilled in the art to understand the contents of the present application and to implement the same, but not to limit the scope of the present application, and all equivalent changes or modifications made according to the spirit of the present application should be included in the scope of the present application.
Claims (10)
1. A wafer electroplating device with independent anode and cathode is characterized in that: the electroplating device comprises an electroplating tank containing electroplating liquid, an electroplating tank with an electroplating cavity, a separation assembly and an anode assembly, wherein the electroplating tank is provided with an opening from the top; the separation component is inserted in the electroplating cavity and separates the electroplating cavity into an anode cavity which is sealed in the circumferential direction and a cathode cavity which is communicated with the opening, and comprises an ion membrane, a first grating plate and a second grating plate which are respectively arranged on two opposite sides of the ion membrane, wherein a plurality of first grating holes and a plurality of second grating holes are correspondingly formed on the first grating plate and the second grating plate, and metal ion channels are formed among the plurality of first grating holes, the ion membrane and the plurality of second grating holes; the wafer carrier loaded with the wafer passes through the open mouth from top to bottom and is inserted into the cathode cavity, the wafer carrier is communicated with the negative electrode of the power supply, the anode assembly comprises a circulating pipeline communicated with the anode cavity, and a conductive column inserted into the anode cavity and communicated with the positive electrode of the power supply, wherein the liquid medicine containing the metal ions circularly flows in the circulating pipeline and the anode cavity, the conductive column is immersed in the liquid medicine, and under the action of current, the metal ions enter the cathode cavity from the anode cavity through the metal ion channel and are plated on the surface of the wafer.
2. The anode-cathode independent wafer plating apparatus according to claim 1, wherein: the first grating plate is fixedly connected with the second grating plate, and the ion membrane is pressed between the first grating plate and the second grating plate.
3. The anode-cathode independent wafer plating apparatus according to claim 1 or 2, wherein: the first grating plate is located on one side of the ion membrane, which is close to the anode cavity, the second grating plate is located on one side of the ion membrane, which is close to the cathode cavity, the first grating holes and the second grating holes are all elongated through holes extending up and down, and a plurality of the first grating holes and a plurality of the second grating holes are arranged at intervals side by side respectively, wherein the width of each first grating hole is larger than that of each second grating hole.
4. A cathode and anode independent wafer plating apparatus according to claim 3, wherein: the first grating plate, the second grating plate and the ion membrane are all round, and the central lines of the first grating plate, the second grating plate and the ion membrane are overlapped.
5. The anode-cathode independent wafer plating apparatus according to claim 4, wherein: the diameters of the first grating plate, the second grating plate and the ion membrane are d1, d2 and d3 in sequence, wherein d1 is more than d3 and less than or equal to d2; and/or the metal ion passing area formed by the first grating plate is s1, and the metal ion passing area formed by the second grating plate is s2, wherein s1=s2.
6. The anode-cathode independent wafer plating apparatus according to claim 1, wherein: the electroplating cavity is a rectangular cavity, two groups of separation assemblies are arranged, the anode cavity is formed between the two groups of separation assemblies and the opposite side walls of the electroplating cavity respectively, and the cathode cavity is positioned between the two groups of separation assemblies.
7. The anode-cathode independent wafer plating apparatus according to claim 6, wherein: the electroplating bath comprises a bath body with an open top and bath plates respectively connected to two opposite sides of the bath body, wherein an electroplating cavity is formed between the bath body and the two bath plates, each bath plate is inwards sunken and forms an anode bath, and each group of separation assemblies are hermetically connected to the corresponding notch of the anode bath.
8. The anode-cathode independent wafer plating apparatus according to claim 7, wherein: the top of the anode tank is arranged in an upward protruding mode, the bottom of the anode tank is arranged in a downward protruding mode, and the circulating pipeline comprises a liquid inlet pipeline and a liquid outlet pipeline, wherein the liquid inlet pipeline is formed on the tank plate and communicated with the bottom of the anode tank, and the liquid outlet pipeline is formed on the tank plate and communicated with the top of the anode tank.
9. The anode-cathode independent wafer plating apparatus according to claim 1, wherein: the anode assembly further includes an insoluble anode plate disposed within the anode cavity and in communication with the conductive post.
10. The anode-cathode independent wafer plating apparatus according to claim 9, wherein: the anode plate adopts a platinum titanium net, and the surface of the anode plate is arranged at intervals with the cavity wall of the anode cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310628393.XA CN116575095A (en) | 2023-05-31 | 2023-05-31 | Cathode-anode independent wafer electroplating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310628393.XA CN116575095A (en) | 2023-05-31 | 2023-05-31 | Cathode-anode independent wafer electroplating equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116575095A true CN116575095A (en) | 2023-08-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310628393.XA Pending CN116575095A (en) | 2023-05-31 | 2023-05-31 | Cathode-anode independent wafer electroplating equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116575095A (en) |
-
2023
- 2023-05-31 CN CN202310628393.XA patent/CN116575095A/en active Pending
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