CN220872403U - Double-wafer electroplating test device - Google Patents

Abstract

The utility model relates to a double-wafer electroplating test device, which comprises a test tank, a wafer carrier for loading wafers, an anode plate carrier for loading anode plates and a stirring unit, wherein the test tank is opened from the top and forms an anode and cathode inserting port, the wafer carrier and the anode plate carrier are respectively inserted into the test tank from the corresponding inserting ports, the front side surface and the rear side surface of the wafer carrier respectively form wafer loading areas, and each loading area is loaded with a single wafer; the anode plate carriers are arranged at the front side and the rear side of the wafer carrier respectively; the stirring unit comprises a stirring body and a driving component for driving the stirring body to reciprocate up and down. According to the utility model, on one hand, two wafers can be subjected to electroplating test synchronously, so that the test efficiency is effectively improved; on the other hand, the vibration of the wafer, which is influenced by the surge of the electroplating liquid, can be effectively restrained, the abrasion is reduced, the service life is prolonged, meanwhile, the distribution of the electric lines between the wafer and the anode plate is improved, and the even distribution of the thickness of the plating layer is ensured.

Description

Double-wafer electroplating test device

Technical Field

The utility model belongs to the field of semiconductor equipment, and particularly relates to a double-wafer electroplating test device.

Background

Wafer refers to a silicon wafer used for manufacturing silicon semiconductor circuits, the original material of which is silicon. The high-purity polycrystalline silicon is dissolved and then doped with silicon crystal seed, and then slowly pulled out to form cylindrical monocrystalline silicon. The silicon crystal bar is ground, polished and sliced to form a silicon wafer. Further, in advanced packaging technology for wafers, important process flows include: the method comprises the steps of gluing, exposing, developing, baking, electroplating, photoresist removing and cleaning, namely, firstly, coating a layer of photoresist on a wafer, carrying out chemical reaction on the photoresist after exposure, then transferring a required fine pattern from a mask plate to the wafer through development, and finally, plating a required metal on a metal medium layer of the wafer by using the electrochemical reaction to form a metal wire.

At present, before a wafer is formally put into electroplating production, a wafer electroplating test is generally required to be performed by using an electroplating test device to test whether each electroplating condition can meet the production requirement. The conventional wafer plating test apparatus generally includes a test tank for containing a plating solution, a wafer carrier and an anode plate carrier inserted in the test tank, respectively, and an agitation plate for agitating the plating solution near the wafer carrier to uniformly distribute metal ions, wherein the wafer carrier and the anode plate carrier are respectively energized to form a cathode and an anode, respectively, thereby starting a plating test.

However, during the actual test, the following drawbacks exist:

1. The wafer carrier is generally freely suspended at the top and the lower part of the test groove from the upper part and immersed in the electroplating liquid, and the surging electroplating liquid easily causes the wafer carrier to shake along with the movement of the stirring plate near the wafer carrier, so that the abrasion of a matching surface between the upper part of the wafer carrier and the test groove is increased, the service life is reduced, and defects such as uneven thickness distribution of a plating layer on the surface of the wafer are easy to occur under the working condition that the wafer shakes continuously;

2. the existing test device can only carry out electroplating test on a single wafer and has low efficiency.

Disclosure of utility model

The utility model aims to overcome the defects of the prior art and provide an improved double-wafer electroplating test device.

In order to solve the technical problems, the utility model adopts the following technical scheme:

the double-wafer electroplating test device comprises a test tank containing electroplating liquid, a wafer carrier for loading wafers, an anode plate carrier for loading anode plates and a stirring unit, wherein the test tank is opened from the top and forms an anode and cathode inserting port, the wafer carrier and the anode plate carrier are respectively inserted into the test tank from the corresponding inserting ports, the front side surface and the rear side surface of the wafer carrier respectively form wafer loading areas, and each loading area is loaded with a single wafer; the anode plate carriers are arranged at the front side and the rear side of the wafer carrier respectively; the stirring unit comprises a stirring body and a driving part for driving the stirring body to reciprocate up and down, wherein the stirring body is provided with a groove extending downwards from the top, the wafer carrier is inserted in the groove from top to bottom, and in the up-and-down reciprocation of the stirring body, the groove limits the wafer carrier to shake around. In other words, the lower part of the wafer carrier is always inserted into the groove during the up-and-down reciprocation of the stirring body.

Preferably, the stirring body comprises two stirring plates and a connecting module, wherein the two stirring plates are arranged on the front side and the rear side of the wafer carrier and are used for limiting the front and rear shaking of the wafer carrier, the connecting module is connected between the corresponding side edges of the two stirring plates and is used for limiting the left and right shaking of the wafer carrier, and a groove is formed between the two stirring plates and the connecting module; the driving part is connected with the connecting module. The structure is simple, and the installation and the implementation are convenient.

Specifically, each stirring plate is arranged in parallel with the corresponding side surface of the wafer carrier, and a plurality of through holes which are distributed at intervals up and down are formed in the middle of each stirring plate, wherein each through hole is a strip-shaped hole which extends horizontally. Here, while agitating the plating liquid, the passability of metal ions can be ensured.

Preferably, the inner side of each stirring plate is respectively provided with a plurality of limiting columns, and the plurality of limiting columns on each stirring plate are divided into two limiting column groups, and in orthographic projection in the direction of the center line of the wafer, the two limiting column groups are positioned at the left side and the right side of the wafer.

Specifically, a plurality of spacing posts on two stirring boards are arranged in a front-back symmetry manner. Here, the front and rear sides of the wafer carrier are balanced in stress, so that the problem of deformation is avoided.

Further, each limit column is vertically and fixedly connected to the corresponding stirring plate from one end, and the other end is tangentially arranged with the corresponding side surface of the wafer carrier. Here, reduce spacing post and wafer carrier's area of contact, reduce wearing and tearing, increase of service life.

Preferably, the connecting module is U-shaped, and each stirring plate is fixedly connected with the connecting module from the left side, the right side and the bottom side.

Specifically, a plurality of rollers which are vertically distributed at intervals are respectively arranged on the inner walls of the left side and the right side of the connecting module, wherein each roller correspondingly abuts against the left side and the right side of the wafer carrier and rolls up and down relative to the wafer carrier.

Preferably, the anode plate carrier comprises a carrier body which is inwards sunken from one side and is provided with an anode tank, a baffle plate which is fixed on the carrier body and covers the anode tank, and an ion membrane which is tiled on the inner side of the baffle plate, wherein a plurality of ion through holes are distributed on the baffle plate in a region corresponding to the anode plate. Here, the concentration of impurities in the electroplating solution is reduced, and the quality of the plating layer is improved.

Specifically, the anode plate is an insoluble anode. Here, the metal ion supply is stable.

Due to the implementation of the technical scheme, compared with the prior art, the utility model has the following advantages:

In the wafer electroplating test in the prior art, the defects of plating defects and low test efficiency are caused by shaking of the wafer under the surge of the electroplating liquid, the structure of the test device is designed integrally, various defects and defects in the prior art are skillfully solved, after the test device is adopted, two wafers and an anode plate are correspondingly loaded on respective carriers and are inserted into a test groove through corresponding insertion ports, in the electroplating process, the wafer carriers are inserted into grooves of a stirring body, and in the up-and-down movement of the stirring body, the shaking of the wafer carriers to the periphery is limited by the grooves, so that compared with the prior art, the test device disclosed by the utility model can be used for carrying out the electroplating test on two wafers synchronously and effectively improving the test efficiency; on the other hand, the vibration of the wafer, which is influenced by the surge of the electroplating liquid, can be effectively restrained, the abrasion is reduced, the service life is prolonged, meanwhile, the distribution of the electric lines between the wafer and the anode plate is improved, and the even distribution of the thickness of the plating layer is ensured.

Drawings

The utility model will now be described in further detail with reference to the accompanying drawings and specific examples:

FIG. 1 is a schematic perspective view of a dual wafer plating test apparatus according to the present utility model;

FIG. 2 is a schematic exploded view of a dual wafer plating test apparatus according to the present utility model;

FIG. 3 is a schematic front view (partially omitted) of a dual wafer plating test apparatus according to the present utility model;

FIG. 4 is a schematic cross-sectional view of A-A of FIG. 3;

In the accompanying drawings: 1. a test tank; 10. a tank body; 11. a slot cover;

2. A wafer carrier;

3. An anode plate carrier; 30. a carrier body; c1, an anode groove; 31. a baffle; 310. an ion through hole;

4. A stirring unit; 40. a stirring body; 400. a stirring plate; k. a through hole; z, a limit column; 401. a connection module; g. a roller; c2, grooves; 41. a driving member.

Detailed Description

In order that the above objects, features and advantages of the application will be readily understood, a more particular description of the application will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. The present application may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the application, whereby the application is not limited to the specific embodiments disclosed below.

In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present application.

Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.

In the present application, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.

In the present application, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.

It will be understood that when an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.

As shown in fig. 1 to 4, the double wafer plating test apparatus of the present embodiment includes a test tank 1, a wafer carrier 2 for loading wafers, an anode plate carrier 3 for loading anode plates, and a stirring unit 4.

Specifically, the test tank 1 comprises a cuboid tank body 10 extending up and down, and a tank cover 11 covering the top of the tank body 1, wherein the tank body 10 is filled with electroplating solution, two anode plug-in ports arranged side by side at intervals and an anode plug-in port arranged between the two cathode plug-in ports are formed in the tank cover 11, and the wafer carrier 2 and the two anode plate carriers 3 vertically penetrate through the cathode plug-in ports and the anode plug-in ports respectively and extend into the tank body 10.

In this example, the front and rear sides of the wafer carrier 2 form wafer loading areas, respectively, and each loading area is loaded with a single wafer. The wafer carrier 2 may be of any conventional construction. The two anode plate carriers 3 are respectively positioned at the front side and the rear side of the wafer carrier 2, and perform an electroplating process with the corresponding wafers.

Each anode plate carrier 3 comprises a carrier body 30 which is recessed inwards from one side and is provided with an anode tank c1, a baffle plate 31 which is fixed on the carrier body 30 and covers the anode tank c1, and an ion membrane which is tiled on the inner side of the baffle plate 31, wherein a plurality of ion through holes 310 are distributed in the area of the baffle plate 31 corresponding to the anode plate; the ionic membrane only allows metal ions required by electroplating to pass through, and is the prior art. In some embodiments, the anode plate is an insoluble anode.

In this example, the stirring unit 4 includes a stirring body 40 and a driving member 41 for driving the stirring body 40 to reciprocate up and down, wherein the stirring body 40 is formed with a groove c2 extending downward from the top, the wafer carrier 2 is inserted into the groove c2 from top to bottom, and the groove c2 restricts the wafer carrier 2 from rocking around during the up and down reciprocation of the stirring body 40. In other words, the lower portion of the wafer carrier 2 is always inserted into the groove c2 during the up-and-down reciprocation of the stirring body 40.

Specifically, the stirring body 40 includes two stirring plates 400 disposed on the front side and the rear side of the wafer carrier 2 and used for limiting the back-and-forth shaking of the wafer carrier 2, and a connection module 401 connected between the corresponding sides of the two stirring plates 400 and used for limiting the left-and-right shaking of the wafer carrier 2, wherein a groove c2 is formed between the two stirring plates 400 and the connection module 401; the driving part 41 is connected to the connection module 401.

Each stirring plate 400 is arranged in parallel with the corresponding side surface of the wafer carrier 2, and a plurality of through holes k which are distributed vertically at intervals are formed in the middle of each stirring plate 400, wherein each through hole k is a horizontally extending long strip-shaped hole, and the length of each through hole k is larger than the diameter of a wafer; the inner side of each stirring plate 400 is respectively provided with a plurality of limit columns z, the limit columns z on each stirring plate 400 are divided into two limit column groups, and in orthographic projection in the direction of the center line of the wafer, the two limit column groups are positioned at the left side and the right side of the wafer; the plurality of limit posts z on the two stirring plates 400 are symmetrically arranged front and back; each limit column z is vertically and fixedly connected to the corresponding stirring plate 400 from one end, and the other end is tangential to the corresponding side surface of the wafer carrier 2. In order not to interfere with the contour of the wafer carrier 2 and also in order to bring the stirring plate 400 closer to the wafer to enhance the stirring effect, the stirring plate 400 protrudes from the middle region where the through hole k is formed toward the wafer carrier 2.

The connecting modules 401 are U-shaped, and each stirring plate 400 is fixedly connected with the connecting modules 401 from the left side, the right side and the bottom side; a plurality of rollers g are respectively arranged on the inner walls of the left side and the right side of the connecting module 401 at intervals up and down, wherein each roller g correspondingly abuts against the left side and the right side of the wafer carrier 2 and rolls up and down relative to the wafer carrier 2.

In addition, the driving part 41 is fixed on the slot cover 11 in parallel, and the driving part 41 adopts a linear motor.

In summary, after the test device is adopted, two wafers and anode plates are correspondingly loaded on the respective carriers and are inserted into the test groove through the corresponding insertion ports, in the electroplating process, the wafer carriers are inserted into the grooves of the stirring body, and the grooves limit the wafer carriers to swing around in the up-and-down motion of the stirring body, so that compared with the prior art, the test device disclosed by the utility model can be used for synchronously carrying out electroplating tests on the two wafers, and the test efficiency is effectively improved; on the other hand, the vibration of the wafer, which is influenced by the surge of the electroplating liquid, can be effectively inhibited, the abrasion is reduced, the service life is prolonged, meanwhile, the distribution of the electric lines between the wafer and the anode plate is improved, and the even distribution of the thickness of the plating layer is ensured; in the third aspect, through the arrangement of the stirring plate, the limiting columns and the wafer carrier, the front side and the rear side of the wafer carrier are balanced in stress, so that the problem of deformation is avoided; in the fourth aspect, the structure is simple, and the installation and implementation are convenient.

The present utility model has been described in detail with the purpose of enabling those skilled in the art to understand the contents of the present utility model and to implement the same, but not to limit the scope of the present utility model, and all equivalent changes or modifications made according to the spirit of the present utility model should be included in the scope of the present utility model.

Claims (10)

1. The utility model provides a double wafer electroplate test device, its includes the test tank that holds plating solution, is used for loading the wafer carrier, is used for loading the anode plate carrier, the stirring unit of anode plate, wherein the test tank is opened from the top and form the cartridge mouth of positive pole and negative pole, wafer carrier and anode plate carrier are respectively from corresponding the cartridge mouth inserts the test tank, its characterized in that: the front side surface and the rear side surface of the wafer carrier respectively form wafer loading areas, and each loading area is loaded with a single wafer; the anode plate carriers are arranged at the front side and the rear side of the wafer carrier respectively; the stirring unit comprises a stirring body and a driving part for driving the stirring body to reciprocate up and down, wherein the stirring body is provided with a groove extending downwards from the top, the wafer carrier is inserted in the groove from top to bottom, and in the up-and-down reciprocation of the stirring body, the groove limits the wafer carrier to shake around.

2. The dual wafer plating test apparatus according to claim 1, wherein: the stirring body comprises two stirring plates and a connecting module, wherein the two stirring plates are arranged on the front side and the rear side of the wafer carrier and are used for limiting the front-back shaking of the wafer carrier, the connecting module is connected between the corresponding side edges of the two stirring plates and is used for limiting the left-right shaking of the wafer carrier, and the grooves are formed between the two stirring plates and the connecting module; the driving part is connected with the connecting module.

3. The dual wafer plating test apparatus according to claim 2, wherein: each stirring plate is arranged in parallel with the corresponding side surface of the wafer carrier, and a plurality of through holes which are distributed at intervals up and down are formed in the middle of each stirring plate, wherein each through hole is a strip-shaped hole which extends horizontally.

4. The dual wafer plating test apparatus according to claim 3, wherein: the inner side of each stirring plate is provided with a plurality of limiting columns respectively, the limiting columns on each stirring plate are divided into two limiting column groups, and in orthographic projection in the direction of the center line of the wafer, the two limiting column groups are positioned on the left side and the right side of the wafer.

5. The dual wafer plating test apparatus according to claim 4, wherein: the limiting columns on the two stirring plates are arranged symmetrically front and back.

6. The dual wafer plating test apparatus according to claim 4 or 5, wherein: each limit column is vertically and fixedly connected to the corresponding stirring plate from one end, and the other end of each limit column is tangential to the corresponding side surface of the wafer carrier.

7. The dual wafer plating test apparatus according to claim 2, wherein: the connecting module is U-shaped, and each stirring plate is fixedly connected with the connecting module from the left side, the right side and the bottom side.

8. The dual wafer plating test apparatus according to claim 7, wherein: and a plurality of rollers which are vertically distributed at intervals are respectively arranged on the inner walls of the left side and the right side of the connecting module, wherein each roller correspondingly props against the left side and the right side of the wafer carrier and is vertically arranged in a rolling way relative to the wafer carrier.

9. The dual wafer plating test apparatus according to claim 1, wherein: the anode plate carrier comprises a carrier body which is inwards sunken from one side and is provided with an anode tank, a baffle plate which is fixed on the carrier body and covers the anode tank, and an ion membrane which is tiled on the inner side of the baffle plate, wherein a plurality of ion through holes are distributed in the area of the baffle plate corresponding to the anode plate.

10. The dual wafer plating test apparatus according to claim 9, wherein: the anode plate is an insoluble anode.