CN116568862A - 陈化处理腔室的方法 - Google Patents

陈化处理腔室的方法 Download PDF

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Publication number
CN116568862A
CN116568862A CN202180082511.0A CN202180082511A CN116568862A CN 116568862 A CN116568862 A CN 116568862A CN 202180082511 A CN202180082511 A CN 202180082511A CN 116568862 A CN116568862 A CN 116568862A
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CN
China
Prior art keywords
precursor gas
aged
carbon
power
depositing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180082511.0A
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English (en)
Chinese (zh)
Inventor
V·V·哈桑
B·库玛
A·K·辛格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN116568862A publication Critical patent/CN116568862A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
CN202180082511.0A 2020-10-21 2021-10-14 陈化处理腔室的方法 Pending CN116568862A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/075,801 US11996273B2 (en) 2020-10-21 2020-10-21 Methods of seasoning process chambers
US17/075,801 2020-10-21
PCT/US2021/055029 WO2022086788A1 (en) 2020-10-21 2021-10-14 Methods of seasoning process chambers

Publications (1)

Publication Number Publication Date
CN116568862A true CN116568862A (zh) 2023-08-08

Family

ID=81185224

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180082511.0A Pending CN116568862A (zh) 2020-10-21 2021-10-14 陈化处理腔室的方法

Country Status (5)

Country Link
US (1) US11996273B2 (https=)
JP (1) JP7611375B2 (https=)
KR (1) KR102889597B1 (https=)
CN (1) CN116568862A (https=)
WO (1) WO2022086788A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023119615A (ja) * 2022-02-17 2023-08-29 東京エレクトロン株式会社 基板処理方法および基板処理装置
DE102022126073A1 (de) * 2022-10-10 2024-04-11 Stephan Wege Prozessstabilität durch Abscheidung
CN116288275B (zh) * 2023-03-20 2024-09-10 上海华力集成电路制造有限公司 钛铝沉积机台的工艺腔室暖机方法
US20250022688A1 (en) * 2023-07-11 2025-01-16 Tokyo Electron Limited Plasma processing method and apparatus

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6589868B2 (en) * 2001-02-08 2003-07-08 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
US20050221020A1 (en) * 2004-03-30 2005-10-06 Tokyo Electron Limited Method of improving the wafer to wafer uniformity and defectivity of a deposited dielectric film
US20080254233A1 (en) * 2007-04-10 2008-10-16 Kwangduk Douglas Lee Plasma-induced charge damage control for plasma enhanced chemical vapor deposition processes
CN106169420A (zh) * 2015-05-08 2016-11-30 朗姆研究公司 用于调节薄膜中的残余应力的方法
CN107636197A (zh) * 2015-06-05 2018-01-26 应用材料公司 赋予掺杂硼的碳膜静电夹持及极佳颗粒性能的渐变原位电荷捕捉层

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3561611B2 (ja) * 1997-09-25 2004-09-02 三洋電機株式会社 硬質炭素系被膜
JP2002184754A (ja) 2000-12-13 2002-06-28 Seiko Epson Corp ドライエッチング装置のシーズニング方法
US7288284B2 (en) 2004-03-26 2007-10-30 Taiwan Semiconductor Manufacturing Co., Ltd. Post-cleaning chamber seasoning method
US7094442B2 (en) * 2004-07-13 2006-08-22 Applied Materials, Inc. Methods for the reduction and elimination of particulate contamination with CVD of amorphous carbon
US20080118663A1 (en) 2006-10-12 2008-05-22 Applied Materials, Inc. Contamination reducing liner for inductively coupled chamber
JP4536090B2 (ja) * 2007-07-26 2010-09-01 トヨタ自動車株式会社 炭素薄膜の製造方法
KR20090025053A (ko) * 2007-09-05 2009-03-10 주식회사 아이피에스 화학기상증착 챔버의 시즈닝 방법
US7659184B2 (en) * 2008-02-25 2010-02-09 Applied Materials, Inc. Plasma immersion ion implantation process with chamber seasoning and seasoning layer plasma discharging for wafer dechucking
JP2010205854A (ja) * 2009-03-02 2010-09-16 Fujitsu Semiconductor Ltd 半導体装置の製造方法
CN102903613B (zh) * 2011-07-25 2016-05-18 中国科学院微电子研究所 消除接触孔工艺中桥接的方法
US20200146496A1 (en) * 2016-03-28 2020-05-14 Bhagirath Ghanshyambhai PATADIA Portable fully automatic cooking system
US10002745B2 (en) 2016-05-03 2018-06-19 Applied Materials, Inc. Plasma treatment process for in-situ chamber cleaning efficiency enhancement in plasma processing chamber
US10186400B2 (en) * 2017-01-20 2019-01-22 Applied Materials, Inc. Multi-layer plasma resistant coating by atomic layer deposition
KR102733023B1 (ko) * 2017-12-07 2024-11-20 램 리써치 코포레이션 챔버 내 산화 내성 보호 층 컨디셔닝
JP7162799B2 (ja) * 2018-03-08 2022-10-31 日本アイ・ティ・エフ株式会社 複合被膜および複合被膜の形成方法
US11180847B2 (en) * 2018-12-06 2021-11-23 Applied Materials, Inc. Atomic layer deposition coatings for high temperature ceramic components

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6589868B2 (en) * 2001-02-08 2003-07-08 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
US20050221020A1 (en) * 2004-03-30 2005-10-06 Tokyo Electron Limited Method of improving the wafer to wafer uniformity and defectivity of a deposited dielectric film
US20080254233A1 (en) * 2007-04-10 2008-10-16 Kwangduk Douglas Lee Plasma-induced charge damage control for plasma enhanced chemical vapor deposition processes
CN106169420A (zh) * 2015-05-08 2016-11-30 朗姆研究公司 用于调节薄膜中的残余应力的方法
CN107636197A (zh) * 2015-06-05 2018-01-26 应用材料公司 赋予掺杂硼的碳膜静电夹持及极佳颗粒性能的渐变原位电荷捕捉层

Also Published As

Publication number Publication date
KR102889597B1 (ko) 2025-11-20
TW202225473A (zh) 2022-07-01
KR20230091974A (ko) 2023-06-23
JP7611375B2 (ja) 2025-01-09
JP2023547379A (ja) 2023-11-10
WO2022086788A1 (en) 2022-04-28
US20220122821A1 (en) 2022-04-21
US11996273B2 (en) 2024-05-28

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