CN116560116B - Thermo-optic phase shifter, method for manufacturing thermo-optic phase shifter, and thermo-optic phase shifter array - Google Patents
Thermo-optic phase shifter, method for manufacturing thermo-optic phase shifter, and thermo-optic phase shifter array Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title abstract description 27
- 238000000034 method Methods 0.000 title description 22
- 238000010438 heat treatment Methods 0.000 claims abstract description 147
- 239000002184 metal Substances 0.000 claims abstract description 125
- 229910052751 metal Inorganic materials 0.000 claims abstract description 125
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 60
- 229910052710 silicon Inorganic materials 0.000 claims description 60
- 239000010703 silicon Substances 0.000 claims description 60
- 238000002161 passivation Methods 0.000 claims description 28
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 238000005468 ion implantation Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 description 25
- 238000005530 etching Methods 0.000 description 24
- 235000012431 wafers Nutrition 0.000 description 14
- 238000010586 diagram Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The invention discloses a thermo-optic phase shifter, a manufacturing method of the thermo-optic phase shifter and a thermo-optic phase shifter array, wherein the thermo-optic phase shifter array comprises an array channel formed by a plurality of thermo-optic phase shifters; the heating resistors of the corresponding thermo-optic phase shifters between adjacent channels have preset resistance differences, the heating resistors of the two corresponding thermo-optic phase shifters are connected in series through interconnection metal wires, so that the resistance of each group of heating resistors connected in series is equal, and each group of heating resistors is connected in parallel through metal electrodes. The phase difference between adjacent channels of the phase shifter array can be controlled by adopting a mode of connecting the heating resistors in series, so that the resistance value of each group of heating resistors is equal, the groups are interconnected in a parallel mode, and the phase difference between adjacent channels of the phase shifter array can be controlled by only controlling one input voltage, thereby avoiding the occurrence of extra-large resistors.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a thermo-optic phase shifter, a manufacturing method of the thermo-optic phase shifter and a thermo-optic phase shifter array.
Background
The laser radar is an important sensor for realizing automatic driving, and can help the automobile to realize space perception, thereby helping the automobile to make decisions. If scanning of the whole space is to be achieved, the output beam pointing must be controlled. At present, a mechanical device, MEMS and an optical phased array are mainly used for controlling the direction of a light beam, wherein the optical phased array is an all-solid-state light beam scanning mode, and the reliability is higher. The general structure of an optical phased array includes a beam splitter, a phase shifter array, and an emission grating array. The phase shifter array controls the phase difference between the channels, thereby realizing the control of the beam deflection. The phase control can be realized by changing the refractive index of the waveguide by heating the waveguide through a heating resistor by utilizing the thermo-optical effect of silicon. Most optical phased arrays adopt a mode of independently controlling each heating resistor, and the control difficulty of the mode is gradually increased along with the increase of the number of channels.
There are also methods of connecting all heating resistors in series in the optical phased array reported at present, and although only one heating resistor needs to be controlled by the phase shifter array, the method can lead to large series resistance, and a large angle deflection angle is difficult to realize.
Disclosure of Invention
The invention mainly aims to provide a thermo-optical phase shifter, a manufacturing method of the thermo-optical phase shifter and a thermo-optical phase shifter array, and aims to solve the technical problems that an optical phased array is complicated along with the increase of the number of channels, and the resistance value of a heating resistor is overlarge due to the fact that the control difficulty is reduced only through a series heating resistor.
In order to achieve the above object, the present invention provides a thermo-optic phase shifter, comprising a silicon substrate, a first oxide layer, a silicon device layer, a second oxide layer, a heating resistor, a third oxide layer, a metal layer and a passivation layer from bottom to top; the silicon device layer is configured as a silicon waveguide with a preset pattern, the third oxide layer is configured with contact holes corresponding to two ends of the heating resistor, the contact holes are filled with metal for connecting the heating resistor and the metal layer, the metal layer comprises a metal electrode and an interconnection metal wire for connecting the corresponding heating resistor, and the passivation layer is configured with an opening corresponding to the metal electrode.
Alternatively, the heating resistor is prepared from metal.
Optionally, the contact hole includes a first contact hole and a second contact hole, the metal filled in the first contact hole connects the first end of the heating resistor and the metal electrode, and the metal filled in the second contact hole connects the second end of the heating resistor and the second end of another heating resistor in the same group through an interconnection metal wire, so that the heating resistor is connected in series with the other heating resistor in the same group.
Optionally, the passivation layer comprises Si 3 N 4 Layer and SiO 2 A layer.
In addition, in order to achieve the above object, the present invention also provides a thermo-optic phase shifter manufacturing method, comprising the steps of:
s1: acquiring an SOI wafer; the SOI wafer comprises a silicon substrate, a first oxide layer and a silicon device layer from bottom to top;
s2: etching the silicon device layer by adopting an etching process to obtain a preset silicon waveguide pattern;
s3: depositing a second oxide layer on the silicon device layer;
s4: sputtering and etching on the second oxide layer to obtain a heating resistor;
s5: depositing a third oxide layer on the heating resistor;
s6: etching a contact hole corresponding to the heating resistor on the third oxide layer, and filling metal for connecting the heating resistor and the metal layer in the contact hole;
s7: depositing a metal layer on the third oxide layer, and manufacturing a metal electrode and an interconnection metal wire connected with the corresponding heating resistor by using the metal layer;
s8: depositing a passivation layer on the metal layer;
s9: openings corresponding to the metal electrodes are etched on the passivation layer.
Optionally, after depositing the second oxide layer, performing chemical mechanical polishing treatment on the second oxide layer to obtain a second oxide layer with a preset thickness and a surface of the sputtering heating resistor.
Optionally, after depositing the third oxide layer, performing chemical mechanical polishing treatment on the third oxide layer to obtain a third oxide layer with a preset thickness and a flat surface.
In addition, in order to achieve the above object, the present invention also provides a thermo-optic phase shifter, including a silicon substrate, a first oxide layer, a silicon device layer, a third oxide layer, a metal layer and a passivation layer from bottom to top; the silicon device layer is configured as a ridge-shaped silicon waveguide with a preset pattern, the flat plate of the ridge-shaped silicon waveguide is configured with a heating resistor, the third oxide layer is configured with a contact hole corresponding to the heating resistor, the contact hole is filled with metal for connecting the heating resistor and the metal layer, the metal layer comprises a metal electrode and an interconnection metal wire for connecting the corresponding heating resistor, and the passivation layer is configured with an opening corresponding to the metal electrode.
Optionally, the heating resistor is prepared by doping ion implantation.
Optionally, the heating resistor is configured on a flat plate on either side of the ridge silicon waveguide.
Optionally, an optionalThe passivation layer comprises Si 3 N 4 Layer and SiO 2 A layer.
In addition, in order to achieve the above object, the present invention also provides a thermo-optic phase shifter manufacturing method, comprising the steps of:
s1: acquiring an SOI wafer; the SOI wafer comprises a silicon substrate, a first oxide layer and a silicon device layer from bottom to top;
s2: etching the silicon device layer by adopting an etching process to obtain a preset ridge-shaped silicon waveguide pattern;
s3: doping ion implantation on a flat plate of the ridge-shaped silicon waveguide to form a heating resistor;
s4: depositing a third oxide layer on the silicon device layer;
s5: etching a contact hole corresponding to the heating resistor on the third oxide layer, and filling metal for connecting the heating resistor and the metal layer in the contact hole;
s6: depositing a metal layer on the third oxide layer, and manufacturing a metal electrode and an interconnection metal wire connected with the corresponding heating resistor by using the metal layer;
s7: depositing a passivation layer on the metal layer;
s8: openings corresponding to the metal electrodes are etched on the passivation layer.
Optionally, the distance between the heating resistor edge and the ridge silicon waveguide edge is 200nm-5000nm.
Optionally, after depositing the third oxide layer, performing chemical mechanical polishing treatment on the third oxide layer to obtain a third oxide layer with a preset thickness and a flat surface.
In addition, in order to achieve the above object, the present invention further provides a thermo-optic phase shifter array, including a plurality of array channels formed by the thermo-optic phase shifters as described above; the heating resistors of the corresponding thermo-optic phase shifters between adjacent channels have preset resistance differences, the heating resistors of the two corresponding thermo-optic phase shifters are connected in series through interconnection metal wires, so that the resistance of each group of heating resistors connected in series is equal, and each group of heating resistors is connected in parallel through metal electrodes.
Alternatively, the heating resistors of the corresponding thermo-optic phase shifters between adjacent channels are configured to have a preset length difference to achieve a preset resistance difference.
The invention provides a thermo-optic phase shifter, a manufacturing method of the thermo-optic phase shifter and a thermo-optic phase shifter array, wherein the thermo-optic phase shifter array comprises a plurality of array channels formed by the thermo-optic phase shifters; the heating resistors of the corresponding thermo-optic phase shifters between adjacent channels have preset resistance differences, the heating resistors of the two corresponding thermo-optic phase shifters are connected in series through interconnection metal wires, so that the resistance of each group of heating resistors connected in series is equal, and each group of heating resistors is connected in parallel through metal electrodes. The phase difference between adjacent channels of the phase shifter array can be controlled by adopting a mode of connecting the heating resistors in series, so that the resistance value of each group of heating resistors is equal, the groups are interconnected in a parallel mode, and the phase difference between adjacent channels of the phase shifter array can be controlled by only controlling one input voltage, thereby avoiding the occurrence of extra-large resistors.
Drawings
FIG. 1 is a schematic cross-sectional view of a thermo-optic phase shifter based on a metal heating resistor according to an embodiment of the present invention.
FIG. 2 is a schematic diagram of a method for fabricating a thermo-optic phase shifter based on a metal heating resistor according to an embodiment of the present invention.
FIG. 3 is a schematic cross-sectional view of a doped heating resistor based thermo-optic phase shifter according to an embodiment of the present invention.
Fig. 4 is a schematic diagram of a method for manufacturing a thermo-optic phase shifter based on doped heating resistors according to an embodiment of the present invention.
Fig. 5 is a schematic diagram of a thermo-optic phase shifter array according to an embodiment of the present invention.
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, based on the embodiments of the invention, which would be apparent to one of ordinary skill in the art without inventive effort are within the scope of the invention.
It should be noted that all directional indicators (such as up, down, left, right, front, and rear … …) in the embodiments of the invention are merely used to explain the relative positional relationship, movement, etc. between the components in a particular posture (as shown in the drawings), and if the particular posture is changed, the directional indicators are changed accordingly.
In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary that the technical solutions are based on the fact that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the technical solutions should be considered that the combination does not exist and is not within the scope of protection claimed by the invention.
Currently, in the related art, as the number of channels increases, a control circuit becomes complicated and a resistance value of a heating resistor is too large due to the difficulty of reducing control only by serially connecting the heating resistors.
To solve this problem, various embodiments of the thermo-optic phase shifter, the thermo-optic phase shifter manufacturing method, and the thermo-optic phase shifter array of the present invention are presented. According to the thermo-optic phase shifter, the manufacturing method of the thermo-optic phase shifter and the thermo-optic phase shifter array, provided by the invention, the resistance value of each group of heating resistors is equal in series connection by adopting the two-to-two heating resistors, the groups are interconnected in parallel connection, the phase difference between adjacent channels of the phase shifter array can be controlled by only controlling one input voltage, and the occurrence of extra-large resistors is avoided.
Referring to fig. 1, fig. 1 is a schematic diagram of a thermo-optic phase shifter based on a metal heating resistor according to an embodiment of the present invention.
The embodiment provides a thermo-optic phase shifter, which comprises a silicon substrate, a first oxide layer, a silicon device layer, a second oxide layer, a heating resistor, a third oxide layer, a metal layer and a passivation layer from bottom to top.
Specifically, the silicon device layer is configured as a silicon waveguide with a preset pattern, the third oxide layer is configured with contact holes corresponding to two ends of the heating resistor, the contact holes are filled with metal for connecting the heating resistor and the metal layer, the metal layer comprises a metal electrode and an interconnection metal wire for connecting the corresponding heating resistor, and the passivation layer is configured with an opening corresponding to the metal electrode.
In a preferred embodiment, the thermo-optic phase shifter is a metal heating resistor phase shifter, the heating resistor being made of metal, and a cross-sectional view of the metal heating resistor phase shifter is shown in fig. 1.
In a preferred embodiment, the contact holes include a first contact hole filled with metal connecting the first end of the heating resistor and the metal electrode and a second contact hole filled with metal connecting the second end of the heating resistor and the second end of another heating resistor in the same group through an interconnection metal line so that the heating resistor is connected in series with the other heating resistor in the same group.
In a preferred embodiment, the passivation layer comprises Si 3 N 4 Layer and SiO 2 A layer.
In a preferred embodiment, the present application also provides a thermo-optic phase shifter manufacturing method, comprising the steps of:
s1: acquiring an SOI wafer; the SOI wafer comprises a silicon substrate, a first oxide layer and a silicon device layer from bottom to top;
s2: etching the silicon device layer by adopting an etching process to obtain a preset silicon waveguide pattern;
s3: depositing a second oxide layer on the silicon device layer;
s4: sputtering and etching on the second oxide layer to obtain a heating resistor;
s5: depositing a third oxide layer on the heating resistor;
s6: etching a contact hole corresponding to the heating resistor on the third oxide layer, and filling metal for connecting the heating resistor and the metal layer in the contact hole;
s7: depositing a metal layer on the third oxide layer, and manufacturing a metal electrode and an interconnection metal wire connected with the corresponding heating resistor by using the metal layer;
s8: depositing a passivation layer on the metal layer;
s9: openings corresponding to the metal electrodes are etched on the passivation layer.
In a preferred embodiment, after depositing the second oxide layer, the second oxide layer is subjected to a chemical mechanical polishing process to obtain a second oxide layer of a predetermined thickness and a surface of the sputter heating resistor.
In a preferred embodiment, after the third oxide layer is deposited, the third oxide layer is subjected to a chemical mechanical polishing process to obtain a third oxide layer of a predetermined thickness and a flat surface.
In practical applications, SOI wafers are used in the fabrication of metal-heated resistor phase shifters, based on waveguide and metal-heated resistor fabrication processes. Specifically, as shown in fig. 2, the method comprises the following steps:
step one: the structure is based on an SOI wafer, and a required silicon waveguide pattern is obtained through photoetching, etching and other technological processes.
Step two: deposition of a SiO layer by PECVD 2 Then CMP is used to obtain the required SiO 2 The thickness (preferably 1 μm, the thickness range can be 500nm-5000 nm) and the surface of the sputtering TiN heating resistor (the heating resistor can also be Pt, ti, W, cr, tiN, taN, etc.).
Step three: sputtering TiN with a certain thickness, and etching to obtain the heating resistor.
Step four: deposition of a SiO layer by PECVD 2 Then, a SiO having a thickness of 1 μm was obtained by using CMP 2 And a flat surface.
Step five: and opening contact holes at two ends of the heating resistor by utilizing photoetching, etching and other processes.
Step six: the deposited metal is used to connect the heating resistor with the upper interconnect metal lines and metal electrodes.
Step seven: depositing a metal layer for manufacturing interconnection lines and metal electrodes, and manufacturing interconnection metal lines and metal electrodes.
Step eight: deposition of 100nm Si 3 N 4 And 200nm SiO 2 As passivation layer, lithography and etching process are usedRemoving Si from the metal electrode 3 N 4 And SiO 2 A thin layer.
Other embodiments or specific implementations of the method for manufacturing a thermo-optic phase shifter according to the present invention may refer to the above-mentioned embodiments of the thermo-optic phase shifter, and will not be described herein.
Therefore, the embodiment obtains the heating resistor by etching the silicon waveguide pattern and sputtering etching on the basis of the SOI wafer, and then utilizes the contact hole to connect the heating resistor with the metal electrode to prepare and obtain the metal heating resistor phase shifter.
Referring to fig. 3, fig. 3 is a schematic diagram of a thermo-optic phase shifter based on doped heating resistors according to an embodiment of the present invention.
The embodiment provides a thermo-optic phase shifter, which comprises a silicon substrate, a first oxide layer, a silicon device layer, a third oxide layer, a metal layer and a passivation layer from bottom to top.
Specifically, the silicon device layer is configured as a ridge-shaped silicon waveguide with a preset pattern, the flat plate of the ridge-shaped silicon waveguide is configured with a heating resistor, the third oxide layer is configured with a contact hole corresponding to the heating resistor, the contact hole is filled with metal for connecting the heating resistor and the metal layer, the metal layer comprises a metal electrode and an interconnection metal wire for connecting the corresponding heating resistor, and the passivation layer is configured with an opening corresponding to the metal electrode.
In a preferred embodiment, the thermo-optic phase shifter is a doped heating resistor phase shifter, the heating resistor is prepared by doping ion implantation, and a cross-sectional view of the doped heating resistor phase shifter is shown in fig. 3.
In a preferred embodiment, the heating resistors are disposed on either side of the slab of ridge silicon waveguide.
In a preferred embodiment, the passivation layer comprises Si 3 N 4 Layer and SiO 2 A layer.
In a preferred embodiment, the present application also provides a thermo-optic phase shifter manufacturing method, comprising the steps of:
s1: acquiring an SOI wafer; the SOI wafer comprises a silicon substrate, a first oxide layer and a silicon device layer from bottom to top;
s2: etching the silicon device layer by adopting an etching process to obtain a preset ridge-shaped silicon waveguide pattern;
s3: doping ion implantation on a flat plate of the ridge-shaped silicon waveguide to form a heating resistor;
s4: depositing a third oxide layer on the silicon device layer;
s5: etching a contact hole corresponding to the heating resistor on the third oxide layer, and filling metal for connecting the heating resistor and the metal layer in the contact hole;
s6: depositing a metal layer on the third oxide layer, and manufacturing a metal electrode and an interconnection metal wire connected with the corresponding heating resistor by using the metal layer;
s7: depositing a passivation layer on the metal layer;
s8: openings corresponding to the metal electrodes are etched on the passivation layer.
In a preferred embodiment, the heating resistor edge is at a distance of 200nm to 5000nm from the edge of the ridge silicon waveguide.
In a preferred embodiment, after the third oxide layer is deposited, the third oxide layer is subjected to a chemical mechanical polishing process to obtain a third oxide layer of a predetermined thickness and a flat surface.
In practical applications, SOI wafers are used in the fabrication of doped heating resistor phase shifters, based on waveguide and ion implantation fabrication processes. Specifically, as shown in fig. 4, the method includes the steps of:
step one: the structure is based on an SOI wafer, and a required ridge-shaped silicon waveguide pattern is obtained through photoetching, etching and other technological processes.
Step two: on the ridge silicon waveguide flat plate, a high doping heating resistor is formed by ion implantation, and the distance between the doping resistor edge and the ridge waveguide edge (the preferred value is 1 μm, and the distance range can be 200nm-5000 nm).
Step three: deposition of a SiO layer by PECVD 2 Is used as an upper cladding layer, and then a SiO with a thickness of 2 μm is obtained by using CMP 2 And a flat surface.
Step four: and opening contact holes at two ends of the heating resistor by utilizing photoetching, etching and other processes.
Step five: the deposited metal is used to connect the heating resistor with the upper interconnect metal lines and metal electrodes.
Step six: depositing a metal layer for manufacturing interconnection lines and metal electrodes, and manufacturing interconnection metal lines and metal electrodes.
Step seven: deposition of 100nm Si 3 N 4 And 200nm SiO 2 As passivation layer, si on the metal electrode is removed by photolithography and etching process 3 N 4 And SiO 2 A thin layer.
Other embodiments or specific implementations of the method for manufacturing a thermo-optic phase shifter according to the present invention may refer to the above-mentioned embodiments of the thermo-optic phase shifter, and will not be described herein.
Therefore, the embodiment obtains the heating resistor by etching the ridge-shaped silicon waveguide graph and doping ion implantation on the basis of the SOI wafer, and then utilizes the contact hole to connect the heating resistor with the metal electrode to prepare the doped heating resistor phase shifter.
Referring to fig. 5, fig. 5 is a schematic diagram of a thermo-optic phase shifter array according to an embodiment of the present invention.
The embodiment provides a thermo-optic phase shifter array, which comprises a plurality of array channels formed by the thermo-optic phase shifters of the embodiment.
Specifically, the heating resistors of the corresponding thermo-optic phase shifters between adjacent channels have a preset resistance difference, the heating resistors of the two corresponding thermo-optic phase shifters are connected in series through interconnection metal wires, so that the resistance of each group of heating resistors connected in series is equal, and each group of heating resistors is connected in parallel through metal electrodes.
In a preferred embodiment, the heating resistors of the corresponding thermo-optic phase shifters between adjacent channels are configured to have a predetermined length difference to achieve a predetermined resistance difference.
It is easy to understand that in this embodiment, the length difference of the heating resistors between the adjacent channels of the phase shifter array is designed in advance according to the required phase difference, the shortest heating resistor and the longest heating resistor are connected in series, the next shortest heating resistor and the next longest heating resistor are connected in series according to the rule, i.e. the N heating resistors are divided into N/2 groups, the resistance values of the two heating resistors in each group are equal, and each group is connected in parallel, so that the phase difference between the adjacent channels of the phase shifter array can be controlled only by controlling one input voltage.
Therefore, in the embodiment, the resistance value of each group of heating resistors is equal in series connection by adopting a mode of connecting the heating resistors in pairs, the groups are interconnected in parallel, the phase difference between adjacent channels of the phase shifter array can be controlled by only controlling one input voltage, and the occurrence of extra-large resistors is avoided.
Other embodiments or implementations of the thermo-optic phase shifter array of the present invention may refer to the above-mentioned embodiments of the thermo-optic phase shifter, and will not be described herein.
The foregoing description is only of the preferred embodiments of the invention, and is not intended to limit the scope of the invention, but rather is intended to cover any equivalent structure or equivalent flow scheme disclosed in the specification and drawings, or any other related art, directly or indirectly, as desired.
Claims (10)
1. The thermo-optic phase shifter array comprises a plurality of array channels formed by the thermo-optic phase shifters, and is characterized in that the thermo-optic phase shifter comprises a silicon substrate, a first oxide layer, a silicon device layer, a second oxide layer, a heating resistor, a third oxide layer, a metal layer and a passivation layer from bottom to top; the silicon device layer is configured to be a silicon waveguide with a preset pattern, the third oxide layer is configured with contact holes corresponding to two ends of the heating resistor, the contact holes are filled with metal for connecting the heating resistor and the metal layer, the metal layer comprises a metal electrode and an interconnection metal wire for connecting the corresponding heating resistor, and the passivation layer is configured with an opening corresponding to the metal electrode; the heating resistors of the corresponding thermo-optic phase shifters between adjacent channels have preset resistance differences, the heating resistors of the two corresponding thermo-optic phase shifters are connected in series through interconnection metal wires, so that the resistance of each group of heating resistors connected in series is equal, and each group of heating resistors is connected in parallel through metal electrodes.
2. The thermo-optic phase shifter array of claim 1, wherein the heating resistor is made of metal.
3. The array of claim 1, wherein the contact holes comprise first contact holes and second contact holes, the first contact holes filled with metal connecting a first end of the heating resistor and the metal electrode, the second contact holes filled with metal connecting a second end of the heating resistor and a second end of another heating resistor in the same group via an interconnect metal line to connect the heating resistor in series with the other heating resistor in the same group.
4. The thermo-optic phase shifter array according to claim 1, wherein the passivation layer comprises Si 3 N 4 Layer and SiO 2 A layer.
5. The array of claim 1-4, wherein the heating resistors of the adjacent channels corresponding to the thermo-optic phase shifters are configured to have a predetermined length difference to achieve a predetermined resistance difference.
6. The thermo-optic phase shifter array comprises a plurality of array channels formed by the thermo-optic phase shifters, and is characterized in that the thermo-optic phase shifter comprises a silicon substrate, a first oxide layer, a silicon device layer, a third oxide layer, a metal layer and a passivation layer from bottom to top; the silicon device layer is configured as a ridge-shaped silicon waveguide with a preset pattern, a flat plate of the ridge-shaped silicon waveguide is configured with a heating resistor, the third oxide layer is configured with a contact hole corresponding to the heating resistor, the contact hole is filled with metal for connecting the heating resistor and the metal layer, the metal layer comprises a metal electrode and an interconnection metal wire for connecting the corresponding heating resistor, and the passivation layer is configured with an opening corresponding to the metal electrode; the heating resistors of the corresponding thermo-optic phase shifters between adjacent channels have preset resistance differences, the heating resistors of the two corresponding thermo-optic phase shifters are connected in series through interconnection metal wires, so that the resistance of each group of heating resistors connected in series is equal, and each group of heating resistors is connected in parallel through metal electrodes.
7. The array of claim 6, wherein the heating resistors are fabricated using doped ion implantation.
8. The array of claim 6, wherein the heating resistors are disposed on either side of a slab of ridge silicon waveguide.
9. The thermo-optic phase shifter array according to claim 6, wherein the passivation layer comprises Si 3 N 4 Layer and SiO 2 A layer.
10. The array of claim 6-9, wherein the heating resistors of the respective thermo-optic phase shifters between adjacent channels are configured to have a predetermined length difference to achieve a predetermined resistance difference.
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| WO2022001207A1 (en) * | 2020-07-02 | 2022-01-06 | 联合微电子中心有限责任公司 | Thermo-optic phase shifter, thermo-optic phase shifter network, and photoelectric device |
| TWI760103B (en) * | 2021-02-09 | 2022-04-01 | 國立臺灣科技大學 | Adjustable optical phase array |
| KR102396964B1 (en) * | 2020-11-24 | 2022-05-13 | 한국과학기술원 | Optical phsased array receiver and manufacturing method thereof |
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2023
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| JP2017187649A (en) * | 2016-04-06 | 2017-10-12 | 株式会社豊田中央研究所 | Optical phased array and optical antenna |
| CN109581696A (en) * | 2017-09-28 | 2019-04-05 | 北京万集科技股份有限公司 | A kind of waveguide phase shifter and preparation method thereof |
| CN110609398A (en) * | 2018-06-15 | 2019-12-24 | 北京万集科技股份有限公司 | Phase modulator module and phased array laser radar |
| CN112305785A (en) * | 2019-07-29 | 2021-02-02 | 中国科学院上海微系统与信息技术研究所 | Preparation method of thermo-optic phase shifter based on SOI substrate |
| WO2022001207A1 (en) * | 2020-07-02 | 2022-01-06 | 联合微电子中心有限责任公司 | Thermo-optic phase shifter, thermo-optic phase shifter network, and photoelectric device |
| KR102396964B1 (en) * | 2020-11-24 | 2022-05-13 | 한국과학기술원 | Optical phsased array receiver and manufacturing method thereof |
| TWI760103B (en) * | 2021-02-09 | 2022-04-01 | 國立臺灣科技大學 | Adjustable optical phase array |
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