KR100455646B1 - The array substrate for In-Plane switching mode LCD and method for fabricating the same - Google Patents

Abstract

The present invention relates to a transverse electric field liquid crystal display device, and more particularly, to an array substrate for a transverse electric field liquid crystal display device having an improved aperture ratio.

In order to improve the aperture ratio, a rectangular transparent organic film pattern is formed in the pixel region where the pixel electrode and the common electrode which are alternately formed in the pixel region are formed.

A feature of the present invention is to form a common electrode or a pixel electrode on the left and right sidewalls (step) of the organic layer pattern.

In this way, the aperture ratio is improved.

Description

The array substrate for In-Plane switching mode LCD and method for fabricating the same

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to an array substrate for an in-plane switching mode liquid crystal display device having an improved aperture ratio and a method of manufacturing the same.

In general, the driving principle of the liquid crystal display device uses the optical anisotropy and polarization of the liquid crystal. Since the liquid crystal is thin and long in structure, the liquid crystal has directivity in the arrangement of molecules, and the direction of the molecular arrangement can be controlled by artificially applying an electric field to the liquid crystal.

Accordingly, if the molecular arrangement direction of the liquid crystal is arbitrarily adjusted, the molecular arrangement of the liquid crystal is changed, and light is refracted in the molecular arrangement direction of the liquid crystal due to optical anisotropy to express image information.

Currently, an active matrix liquid crystal display device (AM-LCD: abbreviated as an active matrix LCD, abbreviated as a liquid crystal display device) in which a thin film transistor and pixel electrodes connected to the thin film transistor are arranged in a matrix manner has the best resolution and video performance. It is attracting attention.

The liquid crystal display device includes a color filter substrate (upper substrate) on which a common electrode is formed, an array substrate (lower substrate) on which a pixel electrode is formed, and a liquid crystal filled between the upper and lower substrates. And a method in which the liquid crystal is driven by an electric field applied up and down by the pixel electrode, and has excellent characteristics such as transmittance and aperture ratio.

However, the liquid crystal drive by the electric field applied up-down has a disadvantage that the viewing angle characteristics are not excellent. Therefore, new techniques have been proposed to overcome the above disadvantages. The liquid crystal display device to be described below has an advantage of excellent viewing angle characteristics by a liquid crystal driving method using a transverse electric field.

Hereinafter, a general transverse electric field type liquid crystal display device will be described in detail with reference to FIG. 1.

1 is a cross-sectional view showing a cross section of a general transverse electric field type liquid crystal display device.

As shown, the upper substrate 10, which is a color filter substrate, and the lower substrate 20, which is an array substrate, are spaced apart from each other, and the liquid crystal layer 30 is interposed between the upper and lower substrates 10, 20. It is.

The common electrode 22 and the pixel electrode 24 are formed on the same plane on the lower substrate 20.

The liquid crystal layer 30 is operated by the horizontal electric field 26 of the common electrode 22 and the pixel electrode 24.

2A and 2B are cross-sectional views showing operations in off and on states of a general transverse electric field type liquid crystal display device, respectively.

In FIG. 2A, since the horizontal electric field is not applied in the off state, the phase change of the liquid crystal 32 does not occur.

2B is a diagram illustrating a phase change of the liquid crystal in an on state where a voltage is applied, and the phase change of the liquid crystal 32a at a position corresponding to the common electrode 22 and the pixel electrode 24 is shown in FIG. However, the liquid crystal 32b positioned in the section between the common electrode 22 and the pixel electrode 24 is formed by the horizontal electric field 26 formed by applying a voltage between the common electrode 22 and the pixel electrode 24. It is arranged in the same direction as the horizontal electric field 26. That is, in the transverse electric field type liquid crystal display device, since the liquid crystal moves by the horizontal electric field, the viewing angle is widened.

Therefore, when the transverse electric field type liquid crystal display device is viewed from the front, it can be seen from about 80 to 85 ^o direction in the up / down / left / right directions.

FIG. 3 is a plan view showing a plane of one pixel portion of a lower substrate for a general transverse electric field type liquid crystal display device. FIG. 3 is a bottom substrate in a protective film forming process of a liquid crystal cell through an array process for convenience of description. Also, illustration of the gate and data pad portions is omitted.

As shown in the drawing, a gate wiring 33 including a gate electrode 32 is formed in a first direction, intersects with the gate wiring 33 in a second direction, and includes a data wiring including a source electrode 42. A 33 is formed, and the drain electrode 44 is formed spaced apart from the source electrode 42 at a predetermined interval. The source electrode 42 is formed in the section between the source electrode 42 and the drain electrode 44. ) And the island electrode semiconductor layer 38 overlapping with the drain electrode 44 at predetermined intervals, the gate electrode 32 including the gate electrode 32, the semiconductor layer 38, and the source and drain electrodes 42 and 44. This is called a thin film transistor (T).

In addition, a common wiring 35 is formed in the first direction, and a plurality of common electrodes 34 branch from the common wiring 35 in the second direction.

A lead wire 47 extending from the drain electrode 44 is formed in the first direction, and a plurality of pixel electrodes 46 in the second direction in the lead wire 47 are connected to the common electrode 34. It is staggered.

4A to 4D are cross-sectional views illustrating the cross sections cut along the cutting lines AA and BB of FIG. 3 according to the process steps, and the cutting lines AA and BB respectively form a thin film transistor unit, a common electrode and a pixel electrode. The cross section for

4A illustrates a step of forming the gate electrode 32 and the common electrode 34 on the transparent substrate 30.

In this case, the gate electrode 32 and the common electrode 34 are formed by a first mask process according to a photolithography process using the same metal layer.

The gate electrode 32 and the common electrode 34 may be formed of a metal layer including pure aluminum (Al) or aluminum having a relatively low resistivity.

In FIG. 4B, the gate insulating layer 36, the amorphous silicon layer 38a, and the impurity amorphous silicon layer 38b are patterned on the substrate 30 on which the gate electrode 32 and the common electrode 34 are formed. (38).

The gate insulating layer 36 may be formed using an insulating material such as silicon oxide (SiO ₂ ), silicon nitride (SiN _x ), benzocyclobutene (BCB), acrylic resin, or the like.

The semiconductor layer is an ohmic contact layer made of an impurity amorphous silicon having an increased electron mobility to reduce contact resistance between the active layer 38a made of an amorphous silicon layer and the metal layer to be formed later. contact layer 38b).

In FIG. 4C, the source and drain electrodes 42 and 44 and the pixel electrode 46 are formed on the semiconductor layer 38 by a third mask process.

As illustrated, source and drain electrodes 42 and 44 are formed on the semiconductor layer 38 by a predetermined distance from each other, and on the gate insulating layer 36, the pixel electrode 46 is connected to the common electrode 34. It is formed at regular intervals.

In this case, since the pixel electrode 46 and the data line (not shown) are formed on the same plane, in order to prevent image degradation due to electrical interference between the two metal materials, the pixel electrode is disposed inside the common electrode in the pixel area. To be located.

The metal material forming the source and drain electrodes 42 and 44 and the pixel electrode 46 may be formed of metals such as molybdenum (Mo), tungsten (W), and chromium (Cr) having high chemical corrosion resistance and high mechanical strength. Is done.

It may also be formed of aluminum (Al), tantalum (Ta), antimony (Sb), titanium (Ti), or a double layer thereof.

After the patterns of the source and drain electrodes 42 and 44 are formed, the ohmic contact layer 38b between the source and drain electrodes 42 and 44 is etched to form a channel CH.

In this case, the channel portion CH may have a function of adjusting the on / off of the voltage by completely removing the ohmic contact layer 38b, so that there is no etching selectivity with the ohmic contact layer 38b. Over-etching is performed to the active layer 38a constituting the lower layer by a predetermined depth.

The gate electrode 32, the semiconductor layer 38, and the source and drain electrodes 42 and 44 may be referred to as a thin film transistor T.

Next, FIG. 4D is a step of forming a protective film 48 on the thin film transistor.

A protective film 48 is formed by coating a transparent organic insulating film including benzocyclobutene (BCB) and an acrylic resin (resin) on the entire surface of the substrate on which the data line (not shown) and the pixel electrode 46 are formed. do.

Through the above-described process, a conventional array substrate for a liquid crystal display device can be manufactured.

However, in the transverse electric field array substrate according to the above-described configuration, since the common electrode and the pixel electrode are made of an opaque metal, a large portion of the transverse electric field array substrate is covered with light, resulting in a low aperture ratio.

According to an embodiment of the present invention, a transparent rectangular organic film pattern is formed in a region where the common electrode and a pixel electrode are formed, and then a pixel electrode or a second electrode is formed on a sidewall of the organic film pattern. By forming a common electrode, it is intended to reduce the area occupied by each of the opaque electrodes to improve the aperture ratio of the liquid crystal panel.

1 is a cross-sectional view schematically showing a part of a general transverse electric field type liquid crystal display device;

2A and 2B are cross-sectional views illustrating operations of off and on states of a general transverse electric field type liquid crystal display device, respectively.

3 is a plan view showing a plane of one pixel portion of a conventional array substrate for a transverse electric field type liquid crystal display device;

4A to 4D are process cross-sectional views showing cross-sectional views cut along the lines A-A and B-B of FIG.

5 is a plan view of one pixel portion of an array substrate for a transverse electric field type liquid crystal display device according to a first embodiment of the present invention;

6A to 6C are process plan views sequentially illustrating a manufacturing process of an array substrate for a transverse electric field type liquid crystal display device according to a first embodiment of the present invention;

7A to 7C are cross-sectional views taken along the line VII-VII of FIGS. 6A to 6C, respectively;

8A to 8C are process diagrams of an enlarged cross section of FIG. 7C,

9 is a plan view of one pixel portion of an array substrate for a transverse electric field type liquid crystal display device according to a second embodiment of the present invention;

10A to 10C are process plan views sequentially illustrating a manufacturing process of an array substrate for a transverse electric field type liquid crystal display device according to a second embodiment of the present invention;

11A to 11C are cross-sectional views taken along the line VII-VII of FIGS. 10A to 10C, respectively.

<Brief description of the main parts of the drawing>

100: array substrate 102: gate wiring

104: common wiring 106: gate electrode

108a: vertical component of the common electrode 108b: horizontal component of the common electrode

112: ohmic contact layer 114: active layer

116: organic film pattern 120a: first horizontal component of pixel electrode

120b: second horizontal component of the pixel electrode 120c: vertical component of the pixel electrode

124: source electrode 126: drain electrode

An array substrate for a liquid crystal display device according to the present invention for achieving the above object is a substrate; A gate wiring and a data wiring crossing the substrate perpendicularly to each other to define a pixel region; A common wiring configured in one direction spaced apart from the predetermined wiring in parallel with the gate wiring; A thin film transistor configured at a point where the gate wiring and the data wiring cross each other, the thin film transistor comprising a gate electrode, a semiconductor layer, a source electrode, and a drain electrode; A rectangular organic insulating pattern formed on the pixel region; A common electrode composed of a vertical component formed by vertically branching the common wiring and a horizontal component connecting the vertical components into one; And a pixel electrode including a first horizontal part extending from the drain electrode, a vertical part branched from the first horizontal part to a vertical part of the common electrode, and a second horizontal part connecting the vertical part to one.

A feature of the present invention is to extend the vertical portion of the common electrode or pixel electrode along the sidewalls of the rectangular organic film pattern.

The organic insulating layer pattern is formed of one selected from a group of transparent organic insulating materials including benzocyclobutene (BCB) and an acrylic resin.

An array substrate for a transverse electric field type liquid crystal display device according to a first aspect of the present invention comprises the steps of preparing a substrate; A gate wiring and a gate electrode on the substrate, a common wiring configured to be parallel to one direction at a predetermined distance from the gate wiring, a vertical component vertically branched from the common wiring, and a horizontal component connecting the vertical components to one Forming a common electrode consisting of; Forming a gate insulating film, which is a first insulating film, on an entire surface of the substrate on which the gate wiring and the common wiring are formed; Forming a semiconductor layer including an active layer and an ohmic contact layer on the gate insulating layer on the gate electrode; Forming a rectangular organic film pattern on the pixel region using a transparent organic insulating material on the substrate on which the semiconductor layer is formed; Depositing and patterning a conductive metal on the entire surface of the substrate on which the rectangular organic film pattern is formed, and forming a pixel line by crossing the gate line to define a pixel region, and a source electrode protruding from the data line above the gate electrode. And a drain electrode spaced apart from each other by a predetermined distance, a first horizontal portion extending from the drain electrode, and vertically branched from the first horizontal portion to extend along the left and right sidewalls of the rectangular transparent organic film pattern. A second horizontal portion connecting the vertical portion to the upper portion of the upper portion and the common wiring Forming a constructed pixel electrode; Forming a protective film, which is a second insulating film, on the pixel electrode.

A method of manufacturing an array substrate for a transverse electric field type liquid crystal display device according to a second aspect of the present invention includes the steps of preparing a substrate; Defining a pixel region on the substrate and forming a rectangular organic layer pattern by patterning an organic insulating layer on the defined pixel region; Depositing and patterning a conductive metal on the entire surface of the substrate on which the rectangular organic layer pattern is formed, and forming a common wiring parallel to one direction spaced apart from the gate wiring in one direction and a predetermined distance along the pixel region; Forming a common electrode formed of a vertical component branched vertically from the common wiring and extending along the left and right sidewalls of the rectangular organic film pattern and a horizontal component connecting the vertical components into one; Forming a semiconductor layer formed of an active layer and an ohmic contact layer on an entire surface of the substrate on which the gate wiring, the common wiring, and the common electrode are formed; A data line formed by depositing and patterning a conductive metal on the entire surface of the substrate on which the semiconductor layer is formed; An electrode, a drain electrode spaced apart from the predetermined interval, a first horizontal portion extending in one direction from the drain electrode, a vertical portion vertically branched between the vertical component of the common electrode in the first horizontal portion, and the vertical portion as one Forming a pixel electrode with a second horizontal portion formed on a part of the common wiring while being connected.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

First Embodiment

A feature of the first embodiment of the present invention is to form a rectangular organic film pattern in the pixel region, and to configure the pixel electrode formed in the pixel region on the sidewall (step) of the organic film pattern to improve the aperture ratio of the liquid crystal panel. It features.

5 is a plan view showing a part of an array substrate for a transverse electric field type liquid crystal display device according to a first embodiment of the present invention.

As shown in the drawing, the gate wiring 102 and the data wiring 122 defining the pixel region P are vertically intersected on the array substrate 100, and a thin film transistor (A) is formed at a point where the two wirings intersect. Constitute T).

The thin film transistor T includes a gate electrode 106, an active layer 114, a source electrode 124, and a drain electrode 126.

In this case, an ohmic contact layer 112, which is an impurity semiconductor layer, is interposed between the source and drain electrodes 124 and 126 and the active layer 114.

The common wiring 104 is formed in parallel with the gate wiring 102 at predetermined intervals.

The common electrode 108 is formed in the pixel region P by a vertical component 108a extending vertically from the common wiring 104 and a horizontal component 108b connecting the vertical component 108a into one.

In addition, the pixel electrode 120 is alternately formed with the common electrode 108, and the pixel electrode 120 also includes a first horizontal component (c) which connects the vertical component 120c and the vertical component to each other from the bottom and the top. 120a) and the second horizontal component 120b.

The vertical component 120c of the pixel electrode 120 is staggered from the vertical component 108a of the common electrode 108. In this case, the vertical component 120c of the pixel electrode 120 has a rectangular organic film pattern ( 116 is formed in the pixel region P, and an electrode is formed on the sidewall of the organic layer pattern 116.

The array substrate structure of the side electrode 120c has an effect of improving the aperture ratio of the liquid crystal panel since the area of the opaque metal occupying the pixel area P is smaller than that of the conventional structure.

Hereinafter, a method of manufacturing an array substrate for a liquid crystal display device according to a first embodiment of the present invention will be described with reference to FIGS. 6A to 6C and 7A to 7C.

6A through 6C are process plan views illustrating an array substrate for a liquid crystal display device according to a first embodiment of the present invention, in a process sequence, and FIGS. 7A through 7C illustrate FIGS. 6A through 6C respectively. The process cross-sectional view cut along the wiring, the pixel electrode, and the common electrode part.

First, as shown in FIGS. 6A and 7A, the gate wiring 102 and the common wiring 104 formed in one direction in parallel with a predetermined interval therebetween are formed on the substrate 100.

At the same time, a gate electrode 106 protruding a predetermined area from the gate wiring 102, a plurality of vertical components 108a extending vertically from the common wiring 102, and a horizontal component connecting the vertical components into one ( A common electrode 108 composed of 108b is formed.

A first insulating film is formed by depositing one selected from the group of inorganic insulating materials including silicon nitride (SiN _x ) and silicon oxide (SiO ₂ ) on the entire surface of the substrate 100 on which the gate wiring 102 and the common electrode 108 are formed. An in-gate insulating film 110 is formed.

Next, amorphous silicon (a-Si: H) and amorphous silicon (n + a-Si: H) containing impurities are deposited on the gate insulating layer 110 and then patterned to form an upper portion of the gate electrode 106. An active layer 112 and an ohmic contact layer 114 formed in a planar shape with an island shape on the substrate are formed.

6B and 7B, benzocyclobutene (BCB) is formed on the entire surface of the substrate 100 on which the gate wiring 102, the common wiring 104, the active layer 112, and the ohmic contact layer 114 are formed. ) And a selected one of a group of transparent organic insulating materials including acrylic resin and a resin is deposited to form a rectangular organic film pattern 116 in the pixel region (P).

The top, bottom, left, and right (A, B, C, D) sides of the rectangular organic film pattern 116 are configured to be stepped at a predetermined height.

In this case, the left and right steps (hereinafter, referred to as "side walls") C and D of the organic layer pattern 116 are formed to be located at an intermediate point between the vertical components 108a of the common electrodes 108. do.

Next, as illustrated in FIGS. 6C and 7C, chromium (Cr), molybdenum (Mo), tungsten (W), and aluminum (Al) are formed on the entire surface of the substrate 100 on which the rectangular organic film pattern 116 is formed. A conductive metal layer 118 is formed by depositing one selected from the group of conductive metals including aluminum alloy, aluminum alloy, and the like.

Next, after the photoresist is deposited on the metal layer 118, the data line 120, the source electrode 124, the drain electrode 126, and the pixel region P are formed. It develops after exposing the whole surface except the part which becomes the 1st horizontal part 120a and the 2nd horizontal part 120b among the components of the pixel electrode 120. FIG.

The opaque metal exposed between the partially removed photo-resist layer 122 is removed by dry etching.

In this case, the metal deposited on the sidewall of the organic layer pattern among the metal layer 118 deposited on the pixel region P remains after dry etching. A description with reference to FIGS. 8A to 8B is as follows.

8A to 8B are enlarged cross-sectional views enlarging C of FIG. 7C.

As shown in FIG. 8A, when the dry etching is performed, the etching speed in the vertical direction E and the etching speed in the horizontal direction F are different.

Therefore, as shown in FIG. 8B, the side surface width W of the metal electrode 120 remaining after the dry etching is about 0.7 μm, and the height H of the side surface is about 0.3 μm.

Referring back to FIGS. 6C and 7C, the opaque metal layer 118 is patterned to intersect the gate wiring 102 to be perpendicular to the data wiring 122 defining the pixel region P, and the data wiring 122. The source electrode 124 extending above the gate electrode 106 and the drain electrode 126 spaced apart from each other are formed.

At the same time, the second horizontal portion 120b is formed on the first horizontal portion 120a of the pixel electrode 120 and the common wiring 104 by extending in one direction from the drain electrode 126.

The first horizontal portion 120a is patterned over the lower sidewall B of the rectangular organic layer pattern 116. At the same time, the left side of the rectangular organic film pattern 116. Residual metal electrodes 120c extending from the first horizontal portion 120a are left in the right sidewall portions C and D. FIG.

The residual metal electrode 120c becomes a vertical component of the pixel electrode 120.

Next, an inorganic insulating material group or benzocyclobutene including silicon nitride (SiN _x ) and silicon oxide (SiO ₂ ) on the entire surface of the substrate 100 on which the thin film transistor B and the pixel electrode 120 are formed. A passivation layer 128 is formed by depositing or applying one selected from a group of organic insulating materials including BCB) and an acrylic resin.

According to the above process, an array substrate for a transverse electric field type liquid crystal display device according to the present invention can be manufactured.

The above-described first embodiment proposes a method of improving the aperture ratio by using the pixel electrode as the side electrode structure of the organic layer pattern 116, but the second embodiment improves the aperture ratio by using the common electrode as a sidewall electrode structure. I suggest one way.

Second Embodiment

A feature of the second embodiment according to the present invention proposes a structure and method for forming a common electrode constituting a pixel region in a side electrode structure in order to improve the aperture ratio of an array substrate.

9 is a plan view schematically illustrating a part of an array substrate for a transverse electric field type liquid crystal display device according to a second exemplary embodiment of the present invention.

As illustrated, the gate line 204 and the data line 216 cross each other to define the pixel area P, and the thin film transistor T is formed at the intersection of the two lines 204 and 216.

The common wiring 208 is formed to be parallel to the gate wiring 204 in one direction with a predetermined distance therebetween.

The thin film transistor T includes a gate electrode 206 protruding from the gate wiring 204, an active layer 212 formed on a portion of the gate electrode 206, and an upper portion of the active layer 212. Source and drain electrodes 218 and 220 are formed.

A rectangular first organic film pattern 202a and a second organic film pattern 202b are formed in the pixel region P, and the common wiring 208 extends over the organic film patterns 202a and 202b. Form.

The common electrode 210 formed on the pixel area P extends from the common wiring 208 and forms vertical components formed along the steps (side walls) C and D on the left and right sides of the rectangular organic film pattern. 210a) and a horizontal component 210b connecting the vertical components 210a to one.

The horizontal component 210b of the common electrode 210 is formed over the lower side B of the first and second organic layers.

The pixel electrode 222 is formed in the pixel region P together with the common electrode 210, and the pixel electrode 222 is alternately spaced apart from the vertical component 210a of the common electrode 210 by a predetermined distance. One vertical component 222c and a first horizontal portion 222a and a second horizontal portion 222b which connect the vertical component to the lower and upper portions as one.

At this time, in the above-described configuration, the second horizontal portion 222b of the pixel electrode 222 and the common wiring 208 under the same constitute a storage capacitor S, and function as a first storage electrode and a second storage electrode, respectively. Will be

The structure according to the second embodiment of the present invention as described above also has an effect of improving the aperture ratio because the common wiring 208 has a structure that reduces the area occupied in the pixel region P as compared with the conventional one.

Hereinafter, a method of manufacturing an array substrate for a liquid crystal display device according to a second embodiment of the present invention will be described with reference to FIGS. 10A to 10C and 11A to 11C.

10A to 10C are plan views illustrating processes according to the second exemplary embodiment of the present invention, and FIGS. 11A to 11C are cross-sectional views taken along the line VIII-V of FIGS. 10A to 10C.

First, as shown in FIGS. 10A and 11A, a group of organic insulating materials including benzocyclobutene (BCB) and acrylic resin (resin) is selected on a substrate 200 in which a plurality of pixel regions are defined. One is deposited and patterned to form a second organic film pattern 202b on the pixel region P, spaced apart from the first organic film pattern 202a by a predetermined distance therefrom.

Next, as illustrated in FIGS. 10B and 11B, aluminum (Al), aluminum alloy, molybdenum (Mo), chromium (Cr), and the like are formed on the entire surface of the substrate 200 on which the organic layer patterns 202a and 202b are formed. Depositing and patterning a dry-etchable material among the conductive metal groups including the gate wiring 204, the gate electrode 206, and the common wiring 208 by spaced apart from each other in parallel with the gate wiring 204. Form.

The common wiring 208 is formed over the upper side A of the rectangular first and second organic film patterns 202a and 202b.

In this case, the side electrode 210a which is a vertical component of the common electrode 210 extends vertically along the left side C and the right side wall D of the organic layer patterns 202a and 202b in the common wiring 208. It is configured.

Subsequently, a horizontal component 210b of the common electrode 210 connecting the side electrodes 210a to one below is configured.

A group of inorganic insulating materials including silicon nitride (SiN _x ) and silicon oxide (SiO ₂ ) on the entire surface of the substrate 200 on which the gate wiring 204, the common wiring 208, and the common electrode 210 are formed. One is deposited to form a gate insulating film 212 that is a first insulating film.

Next, as shown in FIGS. 10C and 11C, amorphous silicon (a-Si: H) and amorphous silicon (n + a-Si) including impurities are formed on the entire surface of the substrate 200 on which the gate insulating film 212 is formed. : H) is deposited and patterned to form an active layer 212 and an ohmic contact layer 214 that are planarly superimposed in an island shape.

Next, the conductive metal as described above is deposited and patterned on the entire surface of the substrate 200 on which the ohmic contact layer is formed, and perpendicularly intersects the gate wiring 204 to form the first organic layer pattern 202a. A data line 216 defining a pixel region P including a second organic layer pattern 202b and a source electrode protruding from one side of the gate electrode 206 in the data line 216. 218 and the drain electrode 220 spaced apart from the source electrode 218 by a predetermined interval.

At the same time, a first component constituting the vertical component 222c of the pixel electrode 222 in a configuration that is staggered from the vertical component 210a of the common electrode 210, and connecting the vertical component 222c to the lower and upper portions, respectively. The horizontal part 222a and the second horizontal part 222b are formed.

In this case, the second horizontal portion 222b of the pixel electrode 222 is formed on a part of the common wiring 208 to form a storage capacitor C together with the common wiring 208.

Inorganic insulating material group or benzocyclobutene containing silicon nitride (SiO ₂ ) and silicon oxide (SiN _X ) on the entire surface of the substrate 100 on which the data line 216 and the source and drain electrodes 218 and 220 are formed. A protective film 224, which is a second insulating film, is formed by depositing or applying one selected from a group of organic insulating materials including (BCB), acrylic resin, and the like.

Through the above-described process, an array substrate for a transverse electric field type liquid crystal display device according to a second embodiment of the present invention can be manufactured.

According to the present invention as described above, when the common electrode and the pixel electrode constituting the pixel region is configured as a side electrode, the area for blocking the pixel region is smaller than the conventional one for the transverse electric field type liquid crystal display device with improved aperture ratio It is effective to manufacture an array substrate.

Claims (11)

A substrate; A gate wiring and a data wiring crossing the substrate perpendicularly to each other to define a pixel region; A common wiring configured in one direction spaced apart from the predetermined wiring in parallel with the gate wiring; A thin film transistor configured at a point where the gate wiring and the data wiring cross each other, the thin film transistor comprising a gate electrode, a semiconductor layer, a source electrode, and a drain electrode; A rectangular organic insulating pattern formed on the pixel region; A common electrode composed of a vertical component branched vertically from the common wiring and formed along a side of the organic insulating layer, and a horizontal component connecting the vertical components into one; A pixel electrode comprising a first horizontal portion extending from the drain electrode, a vertical portion branched between the vertical portion of the common electrode from the first horizontal portion, and a second horizontal portion connecting the vertical portions to one; Array substrate for a transverse electric field type liquid crystal display device comprising a. delete delete The method of claim 1, And the active layer and the ohmic contact layer are formed of pure amorphous silicon and amorphous silicon containing impurities. The method of claim 1, And the organic insulating layer pattern is one selected from the group of transparent organic insulating materials including benzocyclobutene (BCB) and acrylic resin. Preparing a substrate; A gate wiring and a gate electrode on the substrate, a common wiring configured to be parallel to one direction at a predetermined distance from the gate wiring, a vertical component vertically branched from the common wiring, and a horizontal component connecting the vertical components to one Forming a common electrode consisting of; Forming a gate insulating film, which is a first insulating film, on an entire surface of the substrate on which the gate wiring and the common wiring are formed; Forming a semiconductor layer including an active layer and an ohmic contact layer on the gate insulating layer on the gate electrode; Forming a rectangular organic film pattern on the pixel region using a transparent organic insulating material on the substrate on which the semiconductor layer is formed; Depositing and patterning a conductive metal on the entire surface of the substrate on which the rectangular organic film pattern is formed, and forming a pixel line by crossing the gate line to define a pixel region, and a source electrode protruding from the data line above the gate electrode. And a drain electrode spaced apart from each other by a predetermined distance, a first horizontal portion extending from the drain electrode, and vertically branched from the first horizontal portion to extend along the left and right sidewalls of the rectangular transparent organic film pattern. Forming a pixel electrode including a second horizontal portion connecting the vertical portion to a single portion at an upper portion of the common wiring; Forming a protective film, which is a second insulating film, on the pixel electrode An array substrate manufacturing method for a transverse electric field type liquid crystal display device comprising the step. The method of claim 6, The semiconductor layer is a method of manufacturing an array substrate for a transverse electric field type liquid crystal display device in which a pure amorphous silicon layer and an amorphous silicon layer containing impurities are planarly overlapped. The method of claim 6, And wherein the rectangular transparent organic film pattern is formed of one selected from the group of organic insulating materials including benzocyclobutene (BCB) and acrylic resin (resin). Preparing a substrate; Defining a pixel region on the substrate and patterning an organic insulating layer on the defined pixel region to form a rectangular organic film insulating pattern; Depositing and patterning a conductive metal on the entire surface of the substrate on which the rectangular organic layer pattern is formed, and forming a common wiring parallel to one direction spaced apart from the gate wiring in one direction and a predetermined distance along the pixel region; Forming a common electrode formed of a vertical component branched vertically from the common wiring and extending along the left and right sidewalls of the rectangular organic film pattern and a horizontal component connecting the vertical components into one; Forming a semiconductor layer formed of an active layer and an ohmic contact layer on an entire surface of the substrate on which the gate wiring, the common wiring, and the common electrode are formed; A data line formed by depositing and patterning a conductive metal on the entire surface of the substrate on which the semiconductor layer is formed, and vertically crossing the gate line along the pixel area; A source electrode protruding upward from one side of the gate electrode in the data line, a drain electrode spaced apart from the predetermined distance, a first horizontal portion extending in one direction from the drain electrode, and the common electrode in the first horizontal portion; Forming a pixel electrode with a vertical portion vertically branched between vertical components and a second horizontal portion formed on a part of the common wiring while connecting the vertical portion into one; Array substrate manufacturing method for a transverse electric field type liquid crystal display device comprising a. A substrate; A gate wiring and a data wiring crossing the substrate perpendicularly to each other to define a pixel region; A common wiring configured in one direction spaced apart from the predetermined wiring in parallel with the gate wiring; A thin film transistor configured at a point where the gate wiring and the data wiring cross each other, the thin film transistor comprising a gate electrode, a semiconductor layer, a source electrode, and a drain electrode; A rectangular organic insulating pattern formed on the pixel region; A common electrode comprising a vertical component vertically branched from the common wiring and a horizontal component connecting vertical components to one; A first horizontal portion extending from the drain electrode, a vertical portion branching along a side of the organic insulating layer pattern between the first horizontal portion and a vertical portion of the common electrode, and a second horizontal portion connecting the vertical portion to one; Composed pixel electrode Array substrate for a transverse electric field type liquid crystal display device comprising a. A substrate; A gate wiring and a data wiring crossing the substrate perpendicularly to each other to define a pixel region; A common wiring configured in one direction spaced apart from the predetermined wiring in parallel with the gate wiring; A thin film transistor configured at a point where the gate wiring and the data wiring cross each other, the thin film transistor comprising a gate electrode, a semiconductor layer, a source electrode, and a drain electrode; A plurality of organic insulating pattern formed on the pixel region; A common electrode comprising a vertical component vertically branched from the common wiring to the side of the organic insulating layer and a horizontal component connecting the vertical components into one; A first horizontal portion extending from the drain electrode, a vertical portion branching along the side of the organic insulating layer pattern between the vertical portion of the common electrode in the first horizontal portion, and a second horizontal portion connecting the vertical portion into one Pixel electrode Array substrate for a transverse electric field type liquid crystal display device comprising a.