CN116544302A - 一种基于准一维范德华材料ZrS3纳米带的可调偏振光电探测器的制备方法 - Google Patents
一种基于准一维范德华材料ZrS3纳米带的可调偏振光电探测器的制备方法 Download PDFInfo
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Abstract
本发明属于纳米功能材料领域，具体涉及一种基于准一维范德华材料ZrS3纳米带的可调偏振光电探测器的制备方法。本方法采用机械剥离法将ZrS3晶体剥离成纳米带并转移到SiO2/Si衬底上，再经过电子束曝光和真空蒸镀制备ZrS3光电探测器，通过改变光源波长和调节栅极电压实现可调偏振光电探测器。基于该方法制备的ZrS3光电探测器具有偏振可调，灵敏度高，响应快，性能稳定等特点。该方法操作简单，耗时短，可重复性高，利于高性能可调偏振光电探测器的生产和应用。
Description
技术领域
本发明属于纳米功能材料领域，具体涉及一种基于准一维范德华材料ZrS3纳米带的可调偏振光电探测器的制备方法。
背景技术
各向异性层状材料由于强烈的面内各向异性在光电领域引起了广泛关注。相应的电子和光电器件，特别是偏振光电探测器，也已经在这些各向异性的材料及其范德瓦尔斯(vdW)异质结构中得到证实，它们呈现出优异的光电响应和大的偏振比，同时能够工作在紫外到中红外波长范围，但其各向异性光电响应的调控效果并不理想。作为各向异性层状材料家族的一个重要成员，准一维范德华材料ZrS3具有约2eV的间接带隙，其表现出的光学各向异性也比常见的各向异性的二维材料(如BP和ReS2)更强，从而导致各向异性的拉曼散射行为，以及相应的vdW异质结构的光电特性的调制。ZrS3光电探测器具有很高的探测率和偏振光响应，表现出与波长和栅压相关的偏振行为。考虑到ZrS3的可调控载流子密度的特点，我们发明了一种基于准一维范德华材料ZrS3纳米带的可调偏振光电探测器。
发明内容
本发明的目的是提供一种基于准一维范德华材料ZrS3纳米带的可调偏振光电探测器的制备方法。
为实现上述目的，本方法主要是通过改变光源波长和引入栅压来调控光电探测器的偏振行为。由于ZrS3独特的光吸收行为，可以通过改变光源波长来调控其偏振行为，偏移角从短波长405、450和520纳米时的接近0°(即沿b轴出现光电流最大值)变化到长波长638纳米时的约90°(即沿a轴出现光电流最大值)。引入栅压可以改变光电流的产生机制，随着栅压的增大，光电流产生机制从光电导效应逐渐转变为光门控效应，栅压越负，器件光电流偏振比越大，由此实现可调偏振光电探测。所述方法包括以下步骤：
(1)先将SiO2/Si衬底依次用丙酮、异丙醇、酒精、去离子水各超声清洗5min去除表面的杂质，后用氮气枪将其表面吹干；
(2)使用胶带将ZrS3晶体反复对叠减薄成纳米带，并通过粘取的方式转移到PDMS膜上，然后在光学显微镜下观察，挑选厚度合适样品，通过二维转移平台将样品转移到衬底上；
(3)将旋涂好光刻胶的样品使用加热台进行170℃，3min的烘烤，然后通过电子束曝光将电极图案转移到样品上，显影后使用真空镀膜机蒸镀上电极，最后使用丙酮去除多余光刻胶；
(4)使用半导体测试仪表征器件光电探测性能，真空度为5×10-1mbar，在器件源漏极间加一个1V左右的偏压，使用偏振激光光源对器件进行辐照，通过改变光源波长调控偏振行为，调节背栅电压以改变器件光电流偏振比。
优选的，步骤(2)中所述的样品厚度小于50nm。
优选的，步骤(2)中所述的衬底为SiO2/Si。
优选的，其特征在于，步骤(3)中所述的电极为Ti/Ni、Ti/Au或Bi/Ni等。
优选的，步骤(4)中所述的光源为405、450、520、638或808nm等偏振激光光源。
优选的，步骤(4)中，背栅电压调节范围为-100～100V。
与现有的技术相比，本发明的具有以下优点：
1、本发明基于准一维范德华材料ZrS3纳米带成功制备出了具有偏振可调，灵敏度高，响应快，性能稳定的偏振光电探测器。
2、本发明通过改变光源波长实现了光电探测器偏振行为反转。
3、本发明通过引入栅压调控，从而实现光电探测器偏振比的明显提升。
4、本发明能够实现光∈电信号转换。
附图说明
图1为ZrS3光电探测器制备流程示意图。
图2分别为ZrS3光电探测器的示意图及光学图片。
图3分别为405、450、520、638和808nm激光辐照下绘制的光电流与偏振角度的极坐标图。
图4为26.5mW/cm2的450nm激光辐照下，源漏电压为1V时，光电流偏振比随栅压的变化规律图。
图5为450nm激光辐照下，器件在1V偏压时的动态光电流响应。
具体实施方式
下面结合实例对本发明进行进一步说明。
实施例1
(1)制备光电探测器：先将SiO2/Si衬底依次经过丙酮、异丙醇、酒精、去离子水各超声清洗5min以去除表面的杂质，后用氮气枪将其表面吹干。使用胶带对ZrS3晶体进行机械减薄，将样品通过粘取的方式转移到PDMS膜上，在光学显微镜下挑选厚度小于50nm的合适样品，通过二维转移平台将样品转移到SiO2/Si衬底上。将转移好的样品旋涂光刻胶，接着使用加热台进行170℃、3min的烘烤处理。使用电子束曝光和真空蒸镀在样品镀上电极制备光电探测器。
(2)可调偏振光电探测：使用半导体测试仪表征器件光电探测性能，真空度为5×10-1mbar，在器件源漏极间加一个1V左右的偏压，使用405、450、520、638、808nm等偏振激光对器件进行辐照，通过改变光源波长调控偏振行为，调节背栅电压以改变器件光电流偏振比，背栅电压调节范围为-100～100V。
实施例2
(1)制备光-电信号转换器：先将SiO2/Si衬底依次经过丙酮、异丙醇、酒精、去离子水各超声清洗5min以去除表面的杂质，后用氮气枪将其表面吹干。使用胶带对ZrS3晶体进行机械减薄，将样品通过粘取的方式转移到PDMS膜上，在光学显微镜下挑选厚度小于50nm的合适样品，通过二维转移平台将样品转移到SiO2/Si衬底上。将转移好的样品旋涂光刻胶，接着使用加热台进行170℃、3min的烘烤处理。使用电子束曝光和真空蒸镀在样品镀上电极制备光-电转换器。
(2)光-电信号转换：采用半导体测试仪测试器件光-电信号转换性能，真空度为5×10-1mbar，在器件源漏极间施加约1V的偏压，使用ZrS3响应波长范围内的光源(如405、450、520、638、808nm波长的光源)辐照器件，输入一个光信号，器件将输出一个电信号，并经滤波和放大，完成光-电信号的转换，实现信号的采集和传输。
以上所述仅表达了本发明的优选实施方式，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形、改进及替代，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。
Claims (7)
1.一种基于准一维范德华材料ZrS3纳米带的可调偏振光电探测器的制备方法，其特征在于：所述制备方法是采用机械剥离法将ZrS3晶体剥离成纳米带，通过二维转移平台转移到SiO2/Si衬底上，再经过电子束曝光和真空蒸镀制备ZrS3光电探测器，通过改变光源波长和调节栅极电压实现可调偏振光电探测器的探测。
2.根据权利要求1所述的制备方法，其特征在于，包括以下步骤：
(1)先将SiO2/Si衬底依次用丙酮、异丙醇、酒精、去离子水各超声清洗5min去除表面的杂质，后用氮气枪将其表面吹干；
(2)使用胶带将ZrS3晶体反复对叠减薄成纳米带，并通过粘取的方式转移到PDMS膜上，然后在光学显微镜下观察，挑选厚度合适样品，通过二维转移平台将样品转移到衬底上；
(3)将旋涂好光刻胶的样品使用加热台进行170℃，3min的烘烤，然后通过电子束曝光将电极图案转移到样品上，显影后使用真空镀膜机蒸镀上电极，最后使用丙酮去除多余光刻胶；
(4)使用半导体测试仪表征器件光电探测性能，真空度为5×10-1mbar，在器件源漏极间加一个1V左右的偏压，使用偏振激光光源对器件进行辐照，通过改变光源波长调控偏振行为，调节背栅电压以改变器件光电流偏振比。
3.根据权利要求2所述的方法，其特征在于，步骤(2)中所述的样品厚度小于50nm。
4.根据权利要求2所述的方法，其特征在于，步骤(2)中所述的衬底为SiO2/Si。
5.根据权利要求2所述的方法，其特征在于，步骤(3)中所述的电极为Ti/Ni、Ti/Au或Bi/Ni。
6.根据权利要求2所述的方法，其特征在于，步骤(4)中所述的光源为405、450、520、638或808nm偏振激光光源。
7.根据权利要求2所诉的方法，其特征在于，步骤(4)中，背栅电压调节范围为-100～100V。
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| CN117471674A (zh) * | 2023-12-28 | 2024-01-30 | 浙江大学 | 基于一维纳米线可视化的高精度、低成本转移操纵平台 |
| CN117471674B (zh) * | 2023-12-28 | 2024-04-12 | 浙江大学 | 基于一维纳米线可视化的高精度、低成本转移操纵平台 |
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