CN116544201A - IGBT thermal control system with double-sided structure - Google Patents
IGBT thermal control system with double-sided structure Download PDFInfo
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- CN116544201A CN116544201A CN202310744693.4A CN202310744693A CN116544201A CN 116544201 A CN116544201 A CN 116544201A CN 202310744693 A CN202310744693 A CN 202310744693A CN 116544201 A CN116544201 A CN 116544201A
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- 238000001816 cooling Methods 0.000 claims abstract description 45
- 230000017525 heat dissipation Effects 0.000 claims abstract description 36
- 239000007788 liquid Substances 0.000 claims abstract description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 128
- 229910052802 copper Inorganic materials 0.000 claims description 22
- 239000010949 copper Substances 0.000 claims description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 17
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 13
- 229910052750 molybdenum Inorganic materials 0.000 claims description 13
- 239000011733 molybdenum Substances 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 239000000565 sealant Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 4
- 239000012530 fluid Substances 0.000 description 20
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- 238000009434 installation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4075—Mechanical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4075—Mechanical elements
- H01L2023/4087—Mounting accessories, interposers, clamping or screwing parts
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention belongs to the technical field of cooling equipment, and discloses an IGBT thermal control system with a double-sided structure, which comprises the following components: the micro-channel cooling device comprises a power device, a micro-channel cooling plate and a liquid cooling circulation device; the upper surface and the lower surface of the power device are connected with the micro-channel cold plate through bonding media, one side of the micro-channel cold plate is fixedly provided with a liquid cooling circulation device, and the power device is subjected to heat dissipation control through the micro-channel cold plate and the liquid cooling circulation device. According to the technical scheme, the double-sided radiating structure is used, so that the radiating path of the IGBT device is increased, and the radiating efficiency is improved.
Description
Technical Field
The invention belongs to the technical field of cooling equipment, and particularly relates to an IGBT thermal control system with a double-sided structure.
Background
Insulated gate bipolar transistors (Insulated Gate Bipolar Transistor, IGBTs) are important modules in the fields of clean energy application such as smart grids, wind power generation and electric automobiles, the power of IGBT devices is also increased along with the rapid development of the industries, the heating problems are also increased, and the research of good heat dissipation schemes has become one of the most important subjects.
The most common heat dissipation modes of the IGBT module at present are forced air cooling heat dissipation and liquid cooling heat dissipation; the forced air cooling heat dissipation mode mainly uses devices such as fans, fans and the like to be matched with heat dissipation fins to force electronic devices to dissipate heat to the surrounding environment, but the heat transfer capacity of air cannot meet the heat dissipation requirement of the high heat flux density IGBT module.
The prior water cooling heat dissipation schemes mainly adopt micro-channel cold plates or turbulent flow columns to realize liquid cooling heat dissipation. Compared with air cooling heat dissipation, the liquid cooling micro-channel heat dissipation mode has the advantages of compact structure, low noise, high heat dissipation efficiency and the like; in the prior art, the liquid cooling heat dissipation plate generally comprises a heat dissipation plate and heat dissipation fins, and the heat dissipation efficiency is improved by changing the structure or the installation position of the heat dissipation fins, but the installation and the heat dissipation uniformity of the power source are not considered. The existing micro-flow channels are used for water cooling and radiating, and parallel flow channels generally have the defect of uneven radiating. Serial flow channels typically suffer from insufficient hydrodynamic force, and most micro flow channel studies do not consider the actual power source selection and installation, such as the installation of a water pump.
Disclosure of Invention
The invention aims to provide an IGBT thermal control system with a double-sided structure, which solves the problems in the prior art.
To achieve the above object, the present invention provides an IGBT thermal control system of a double-sided structure, including:
the micro-channel cooling device comprises a power device, a micro-channel cooling plate and a liquid cooling circulation device;
the upper surface and the lower surface of the power device are connected with the micro-channel cold plate through bonding media, one side of the micro-channel cold plate is fixedly provided with a liquid cooling circulation device, and the power device is subjected to heat dissipation control through the micro-channel cold plate and the liquid cooling circulation device.
Optionally, the power device is an IGBT device, including an upper half-bridge and a lower half-bridge;
the upper half bridge comprises a DBC copper-clad plate and a plurality of power chips, wherein the power chips are welded on one side of the DBC copper-clad plate side by side through nano silver, and the DBC copper-clad plate is composed of a plurality of copper layers which are sequentially arranged;
the lower half bridge comprises a silicon nitride ceramic layer and a plurality of power chips, wherein the power chips are welded on one side of the silicon nitride ceramic layer side by side through nano silver, and the bonding medium is arranged on the other side of the silicon nitride ceramic layer;
a plurality of welding buffer structures are arranged between the upper half bridge and the lower half bridge, gaps between the upper half bridge and the lower half bridge are filled with pouring sealant, each welding buffer structure comprises a buffer layer molybdenum column and nano silver, and two ends of the buffer layer molybdenum column are respectively connected with power chips of the half bridges through the nano silver; the connecting piece is arranged on one side of the IGBT device.
Optionally, the microchannel cold plate comprises a cold plate and a cover plate;
wherein, the apron is fixed set up in cold plate one side.
Optionally, the cold plate includes: the device comprises a water inlet, a water outlet, a water inlet main runner, a water outlet main runner, a secondary water inlet, a secondary water outlet, fins and a plurality of first bolt holes;
the water inlet and the water outlet are respectively arranged at two sides of the cold plate, and the first bolt holes are arranged at four corners of the cold plate;
the water inlet and one side of the water outlet are respectively provided with the water inlet main runner and the water outlet main runner, a secondary runner is arranged between the water inlet main runner and the water outlet main runner and is composed of a plurality of fins which are uniformly arranged, one side of the secondary runner is connected with the water inlet main runner through the secondary water inlet, and the other side of the secondary runner is connected with the water outlet main runner through the secondary water outlet.
Optionally, a plurality of second bolt holes are formed in the cover plate, and the plurality of second bolt holes of the cover plate are correspondingly connected with the plurality of first bolt holes of the cold plate.
Optionally, the material of the cold plate and the cover plate is any one of copper and aluminum.
Optionally, the liquid cooling circulation device adopts a micropump, including: the pump body, micropump water outlet, micropump water inlet, bolt hole, copper lead wire and check valve;
the micro pump passes through the third bolt holes and is fixedly connected with the micro-channel cold plate through bolts;
the micropump water outlet and the micropump water inlet are all provided with a plurality of, and every micropump water outlet and micropump water inlet's one end all is provided with the check valve, a plurality of micropump water outlet set up in the pump body upper surface, a plurality of micropump water inlet set up in the pump body lower surface.
Optionally, the water outlet of the micropump is connected with the water inlet of the cold plate, and the water inlet of the micropump is connected with the water outlet of the cold plate.
The invention has the technical effects that:
the invention provides an IGBT heat control system with a double-sided structure, which comprises a power device, a micro-channel cold plate and a liquid cooling circulation device; the upper surface and the lower surface of the power device are connected with the micro-channel cold plate through bonding media, one side of the micro-channel cold plate is fixedly provided with a liquid cooling circulation device, and the heat dissipation of the power device is controlled through the micro-channel cold plate and the liquid cooling circulation device;
the double-sided heat dissipation structure is used, so that a heat dissipation path of the IGBT device is increased, and heat dissipation efficiency is improved.
The invention uses the secondary water inlet to carry out secondary distribution of the fluid, so that the fluid flow velocity distribution is more uniform, and the heat dissipation effect distribution is more uniform.
The invention uses the fixed valve to keep the fluid flowing unidirectionally, thereby avoiding the influence of the fluid backflow on the heat dissipation effect, avoiding the defect that the common valve is easy to fail, improving the reliability of the liquid cooling scheme and reducing the maintenance cost of the scheme.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
The accompanying drawings, which are included to provide a further understanding of the application, illustrate and explain the application and are not to be construed as limiting the application. In the drawings:
FIG. 1 is an overall assembly diagram of a water cooling scheme in an embodiment of the invention;
FIG. 2 is a schematic plan view of a dual sided heat sink device in accordance with an embodiment of the present invention;
FIG. 3 is a three-dimensional model of a cold plate in an embodiment of the invention;
FIG. 4 is a schematic plan view of a cold plate in an embodiment of the invention;
FIG. 5 is a three-dimensional model of a cover plate in an embodiment of the invention;
FIG. 6 is a three-dimensional model of a micropump in an embodiment of the present invention;
FIG. 7 is an internal structural view of a one-way check valve according to an embodiment of the present invention;
description of the reference numerals: the high-power LED comprises a 1-IGBT device, a 11-power chip, 12-nano silver, 13-buffer layer molybdenum columns, 14-pouring sealant, 15-silicon nitride ceramic layers, 16-copper layers, 17-gold germanium, 18-connecting pieces, 2-cold plates, 21-water inlets, 22-water outlets, 23-water inlet main runners, 24-secondary water inlets, 25-secondary water outlets, 26-fins, 27-first bolt holes, 3-cover plates, 31-second bolt holes, 4-micropumps, 41-micropumps water outlets, 42-micropumps water inlets, 43-bolt holes, 44-bolt holes, 45-copper leads, 46-one-way valves and 5-bolts.
Detailed Description
Various exemplary embodiments of the invention will now be described in detail, which should not be considered as limiting the invention, but rather as more detailed descriptions of certain aspects, features and embodiments of the invention.
Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Although the invention has been described with reference to a preferred method, any method similar or equivalent to those described herein can be used in the practice or testing of the present invention. All documents mentioned in this specification are incorporated by reference for the purpose of disclosing and describing the methodologies associated with the documents. In case of conflict with any incorporated document, the present specification will control.
It will be apparent to those skilled in the art that various modifications and variations can be made in the specific embodiments of the invention described herein without departing from the scope or spirit of the invention. Other embodiments will be apparent to those skilled in the art from consideration of the specification of the present invention. The specification and examples are exemplary only.
As used herein, the terms "comprising," "including," "having," "containing," and the like are intended to be inclusive and mean an inclusion, but not limited to.
It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other. The present application will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
Example 1
As shown in fig. 1 to 7, in this embodiment, there is provided an IGBT thermal control system of a double-sided structure, including:
the micro-channel cooling device comprises a power device, a micro-channel cooling plate and a liquid cooling circulation device; the upper surface and the lower surface of the power device are connected with the micro-channel cold plate through bonding media gold germanium 17, one side of the micro-channel cold plate is fixedly provided with a liquid cooling circulation device, and the power device is subjected to heat dissipation control through the micro-channel cold plate and the liquid cooling circulation device.
Through the molybdenum column buffer layer, the mechanical performance of the IGBT device is improved, the structural design of a double bridge arm is realized, and a heat dissipation path is added for the IGBT device. The IGBT device and the cold plate are tightly combined by high-melting-point bonding medium gold germanium. The uniformity of the fluid flow velocity is controlled by arranging the secondary water inlet in the micro-channel cold plate, so that the heat dissipation efficiency is improved. After a proper micropump is selected, a one-way fixed valve is arranged at the water outlet of the micropump, and the one-way fixed valve can control the flow direction of fluid, so that the one-way fixed valve can inhibit the backflow of the fluid, the heat dissipation efficiency of a liquid cooling scheme is improved, the one-way fixed valve is not easy to damage, and the use cost and the maintenance cost are reduced.
The technical scheme adopted by the embodiment is as follows: the utility model provides a high-efficient high reliability IGBT power module liquid cooling heat dissipation scheme, its whole assembly is as shown in figure 1, including IGBT device, cold plate, apron, micropump and bolt, its characterized in that:
the planar schematic diagram of the IGBT device 1 is shown in fig. 2, and the device is divided into an upper bridge part and a lower bridge part, wherein the upper bridge part and the lower bridge part comprise sixteen silicon carbide power chips 11, a nano silver layer 12, a molybdenum column 13, pouring sealant 14, a silicon nitride ceramic layer 15 and a DBC copper-clad plate formed by an upper copper layer 16 and a lower copper layer 16. The silicon carbide power chip 11 is a main heat source of the IGBT power module, the bottom of the silicon carbide power chip is connected with a copper layer 16 of the DBC copper-clad plate through a nano silver layer 12, and the top of the silicon carbide power chip is connected with a molybdenum column 13 through the nano silver layer 12 and is connected to the DBC copper-clad plate of the other half bridge through the molybdenum column. The gold germanium 17 is mainly used for connecting an IGBT device copper-clad plate with the cold plate 2.
The IGBT device 1 is integrally cuboid, the copper-clad plate uses a silicon nitride ceramic layer, an upper copper layer and a lower copper layer, and pouring sealant fills the inside of the whole device. The size of the gold germanium 17 is consistent with that of the copper-clad plate. The material of the connection 18 is copper.
The cold plate 2, the schematic diagrams of which are shown in fig. 3 and 4, comprises a water inlet 21, a water outlet 22, a water inlet main runner 23, a water outlet main runner, a secondary water inlet 24, a secondary water outlet 25, fins 26 and a first bolt hole 27. The water inlet 21 can be sized according to actual needs, and is an inlet for fluid to flow into the cold plate 2, and the size thereof can be adjusted according to actual needs. The water inlet main runner 23 and the water outlet main runner are mainly used for secondary distribution of fluid. The fins 26 divide the interior space of the cold plate into a plurality of micro-channels, providing flow paths for fluid flow. The secondary water inlet 24 and the secondary water outlet 25 divide the micro-channel into a plurality of independent parts, so that the fluid flow velocity is more uniform.
The cold plate 2 is a cuboid bottom plate, the length and the width of the cold plate are slightly larger than those of the IGBT device 1, and the lower surface of the cold plate is bonded with the device copper-clad plate through gold germanium 17. The cold plate is provided with enclosed bosses around, which provides space for fluid flow. The fins 26 are thin rectangular, the fins are parallel to each other, uniform micro-channels are formed, and the heights of the fins are consistent with the heights of the bosses. The material of the cold plate 2 and the cover plate 3 is copper.
The water inlet 21 and the water outlet 22 of the cold plate 2 are circular through holes with the same diameter, the water inlet 21 is positioned at the front side of the cold plate 2, the water outlet 22 is positioned at the rear side of the cold plate 2, the water inlet 21 and the water outlet 22 are positioned at the center line of the long side of the cold plate 2, and the water inlet 21 and the water outlet 22 are symmetrical with respect to the center line of the short side of the cold plate 2. The secondary water inlet 24 and the secondary water outlet 25 of the cold plate 2 are both symmetrical about the center line of the short side of the cold plate 2.
The cover plate 3 is used for sealing the cold plate and protecting the fluid from leakage. The second bolt hole 31 is used for connecting the cover plate with the cold plate bottom plate to form a sealed cold plate.
The micropump 4 comprises two micropump water outlets 41, two micropump water inlets 42, a third bolt hole 43, a bolt hole 44, a copper lead 45 and four one-way valves 46. The bolt holes 44 are used for mounting and fixing the micropump. The water outlet 41 is connected to the cold plate water inlet 21. The water inlet 42 is connected with the cold plate water outlet 22 to form a fluid circulation. The copper lead 45 is used for being connected with an external motor to control the flow of the micropump. The check valve 46 is used for inhibiting liquid backflow and improving the efficiency and reliability of the system.
The diameters of the water inlet 41 and the water outlet 42 of the micropump 4 are consistent with those of the water inlet 21 and the water outlet 22 of the cold plate. The lead 45 is copper and is used for controlling the flow of the micropump. The bolt holes 43 and 44 are mounting and fixing structures of the micropump, and the micropump is mounted on the cover plate 3 by matching with the bolts 5 to form an integrated system.
The bolt 5 is used for assembling and connecting the micropump 4 and the cover plate 3.
Referring to fig. 1, the present embodiment includes a power device, two cold plates 2 and cover plates 3 connected to the power device and vertically symmetrical, a micro pump 4 connected to the upper cold plate, and bolts 5 for connection.
The structure of the power device is shown in fig. 2, and the power device is divided into an upper half bridge and a lower half bridge, each half bridge is provided with eight silicon carbide power chips, one side of each power chip is connected with a copper-clad plate through nano silver paste, the other side of each power chip is connected with a molybdenum column through nano silver paste, and the molybdenum columns are connected with the copper-clad plate of the other half bridge through nano silver paste to form electric connection. And the high-heat-conductivity pouring sealant is filled in the device, so that the device is insulated and mechanical support is provided for the device. The device is connected with the cold plate through gold germanium on the upper bottom surface and the lower bottom surface to form a heat dissipation path.
The power device, the silicon carbide power chip 11 produces heat when working, on one hand, the heat is conducted to the copper layer 16 of the copper-clad plate from the bottom through the nano silver paste 12, the heat of the copper layer 16 is conducted to the silicon nitride ceramic 17, then conducted to the gold germanium, and the heat is taken away by the cold plate; on the other hand, heat is conducted to the molybdenum column 13 from the top through the nano silver paste 12, then conducted to the copper-clad plate of the other half bridge from the molybdenum column 13, and finally conducted to the cold plate through gold germanium. The structure has two main heat dissipation paths, and improves the heat dissipation efficiency.
The cold plate 2 has a structure shown in fig. 3 and 4, and is made of aluminum, and the length-width dimension of the cold plate is slightly larger than that of the IGBT device. The side face of the cooling plate is provided with a water inlet 21 and a water outlet 22, after fluid flows in from the water inlet 21, the fluid firstly passes through a water inlet main runner 23, then flows in from the water inlet main runner 23 into a secondary water inlet 24 into a micro runner formed by fins, flows in from a secondary water outlet 25 into a water outlet main runner, and finally flows out from the water outlet 22.
The cover plate 3 has a structure as shown in fig. 5 and is made of aluminum. The four corners of the cold plate are provided with second bolt holes 31 which are aligned with the first bolt holes 27 of the cold plate 2 and are used for aligning and assembling the cover plate 3 and the cold plate 2 to form a sealed micro-channel cold plate, and heat generated by the device is taken away by fluid flow.
The micropump 4 may be a commercially available micropump, and its structure is shown in fig. 6. Comprises two water outlets 41, two water inlets 42, a bolt hole 43, a third bolt hole 44, a copper lead 45 and four one-way valves 46. The micro pump is electrified through a copper lead 45 to control the micro pump to work, fluid flows out from the water outlet 41, flows into the water inlet 21 of the cold plate 2, flows out from the water outlet 22 of the cold plate 2 and flows back to the water inlet 42 of the micro pump 4, so that liquid cooling circulation is formed. And a one-way valve 46 can be arranged at the water outlet 41 and the water inlet 42 of the micropump to inhibit the backflow of liquid and improve the efficiency of the water cooling system. Compared with the movable valve, the one-way valve has higher reliability, and reduces the use cost and the maintenance cost of the water cooling system.
In this embodiment, the IGBT device 1 is connected to the cold plate 2 through the gold germanium 17, and then the cold plate 2 and the cover plate 3 are aligned and connected through the bolt holes 27 and 31, forming a sealed microchannel cold plate. The micropump 4 is fixedly connected with the cover plate 3 through bolts 5. After the installation is completed, the IGBT device 1 is enabled to work, the silicon carbide power chip 11 generates heat, then fluid flows into the water inlet 21 of the cold plate 2 through the water outlet 41 of the micropump 4, the fluid takes away the heat through the cold plate 2, flows out of the water outlet 22 of the cold plate 2 and enters the water inlet 42 of the micropump 4 to form liquid cooling circulation, and heat dissipation of the IGBT device is completed.
The foregoing is merely a preferred embodiment of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the technical scope of the present application should be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (8)
1. An IGBT thermal control system of a double sided structure, comprising:
the micro-channel cooling device comprises a power device, a micro-channel cooling plate and a liquid cooling circulation device;
the upper surface and the lower surface of the power device are connected with the micro-channel cold plate through bonding media, one side of the micro-channel cold plate is fixedly provided with a liquid cooling circulation device, and the power device is subjected to heat dissipation control through the micro-channel cold plate and the liquid cooling circulation device.
2. The IGBT thermal control system of claim 1 wherein,
the power device is an IGBT device (1) and comprises an upper half-bridge and a lower half-bridge;
the upper half bridge comprises a DBC copper-clad plate and a plurality of power chips (11), wherein the power chips (11) are welded on one side of the DBC copper-clad plate side by side through nano silver (12), and the DBC copper-clad plate is composed of a plurality of copper layers (16) which are sequentially arranged;
the lower half bridge comprises a silicon nitride ceramic layer (15) and a plurality of power chips (11), wherein the power chips (11) are welded on one side of the silicon nitride ceramic layer (15) side by side through nano silver (12), and the bonding medium is arranged on the other side of the silicon nitride ceramic layer (15);
a plurality of welding buffer structures are arranged between the upper half bridge and the lower half bridge, gaps between the upper half bridge and the lower half bridge are filled with pouring sealant (14), each welding buffer structure comprises a buffer layer molybdenum column (13) and nano silver (12), and two ends of the buffer layer molybdenum column (13) are respectively connected with power chips (11) of each half bridge through the nano silver (12); the connecting piece (18) is arranged on one side of the IGBT device (1).
3. The IGBT thermal control system of claim 1 wherein,
the micro-channel cold plate comprises a cold plate (2) and a cover plate (3);
wherein, apron (3) fixed set up in cold board (2) one side.
4. The IGBT thermal control system of claim 3, wherein,
the cold plate (2) comprises: the water inlet (21), the water outlet (22), the water inlet main runner (23), the water outlet main runner, the secondary water inlet (24), the secondary water outlet (25), the fins (26) and a plurality of first bolt holes (27);
the water inlet (21) and the water outlet (22) are respectively arranged at two sides of the cold plate (2), and a plurality of first bolt holes (27) are arranged at four corners of the cold plate (2);
the water inlet (21) and one side of the water outlet (22) are respectively provided with a water inlet main flow passage (23) and a water outlet main flow passage, a secondary flow passage is arranged between the water inlet main flow passage (23) and the water outlet main flow passage and is composed of a plurality of fins (26) which are uniformly arranged, one side of the secondary flow passage is connected with the water inlet main flow passage (23) through a secondary water inlet (24), and the other side of the secondary flow passage is connected with the water outlet main flow passage through a secondary water outlet (25).
5. The IGBT thermal control system of claim 3, wherein,
a plurality of second bolt holes (31) are formed in the cover plate (3), and the second bolt holes (31) of the cover plate (3) are correspondingly connected with the first bolt holes (27) of the cold plate (2).
6. The IGBT thermal control system of claim 3, wherein,
the material of the cold plate (2) and the cover plate (3) is any one of copper and aluminum.
7. The IGBT thermal control system of claim 1 wherein,
the liquid cooling circulation device adopts a micropump (4), and comprises: a pump body, a micropump water outlet (41), a micropump water inlet (42), a bolt hole (43), a bolt hole (44), a copper lead (45) and a one-way valve (46);
the micro pump (4) passes through the third bolt holes (44) through bolts (5) and is fixedly connected with the micro-channel cold plate;
the micropump water outlet (41) and the micropump water inlet (42) are all provided with a plurality of, and every micropump water outlet (41) and one end of micropump water inlet (42) all are provided with check valve (46), a plurality of micropump water outlet (41) set up in the pump body upper surface, a plurality of micropump water inlet (42) set up in the pump body lower surface.
8. The IGBT thermal control system of claim 7 wherein,
the micro pump water outlet (41) is connected with the water inlet (21) of the cold plate (2), and the micro pump water inlet (42) is connected with the water outlet (22) of the cold plate (2).
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CN116995048A (en) * | 2023-09-26 | 2023-11-03 | 苏州中瑞宏芯半导体有限公司 | Copper strip bonding power module for vehicle |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN116995048A (en) * | 2023-09-26 | 2023-11-03 | 苏州中瑞宏芯半导体有限公司 | Copper strip bonding power module for vehicle |
CN116995048B (en) * | 2023-09-26 | 2023-12-29 | 苏州中瑞宏芯半导体有限公司 | Copper strip bonding power module for vehicle |
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