CN219917149U - Power management chip packaging structure - Google Patents
Power management chip packaging structure Download PDFInfo
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- CN219917149U CN219917149U CN202321342763.5U CN202321342763U CN219917149U CN 219917149 U CN219917149 U CN 219917149U CN 202321342763 U CN202321342763 U CN 202321342763U CN 219917149 U CN219917149 U CN 219917149U
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- Prior art keywords
- heat dissipation
- substrate
- power management
- heat
- management chip
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 16
- 230000017525 heat dissipation Effects 0.000 claims abstract description 91
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 239000007788 liquid Substances 0.000 claims description 19
- 239000002826 coolant Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 230000005855 radiation Effects 0.000 abstract description 4
- 238000001816 cooling Methods 0.000 abstract description 2
- 238000007789 sealing Methods 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
Abstract
The utility model relates to a power management chip packaging structure, which comprises a plastic package body, a second heat dissipation substrate and a pair of heat dissipation components; the area of the second heat dissipation substrate is larger than that of the bottom wall of the plastic package body, the plastic package body is positioned at the center of the top of the second heat dissipation substrate, and the side wall of the plastic package body is attached to the heat dissipation assembly; the bottom wall of the heat radiation component is attached to the top of the second heat radiation substrate; the plastic package part body is wrapped through the second heat dissipation substrate and the heat dissipation assembly, and heat dissipation and cooling are conducted on the plastic package part body. According to the power management chip packaging structure, the multidirectional heat dissipation channels are used for dissipating heat of the chip packaging structure, so that the heat dissipation performance is effectively improved.
Description
Technical Field
The utility model relates to the field of semiconductor packaging, in particular to a power management chip packaging structure.
Background
The power management chip plays roles in converting, distributing, detecting and other power management of the power in the electronic device system. The power management chip is indispensable to the electronic system, and the performance of the power management chip has direct influence on the performance of the whole machine. The main components of the existing power management chip include a power switch, a control integrated circuit IC, an input capacitor, an output capacitor, a power inductor, and a resistor and a capacitor for signal processing. Typically, power switches are metal oxide semiconductor field effect transistors MOSFETs or insulated gate bipolar transistors IGBTs, and the control ICs may be driver chips, or pulse width modulation control chips, or a combination of both. In the prior art, a power management chip adopts an embedded electronic element packaging technology to embed a chip IC and a passive device in an ECP packaging substrate, and then the surface of an inductor with larger volume is attached to the ECP substrate to construct a three-dimensional laminated structure. Through with chip and passive device stack structure, show the area that reduces the module and occupy the base plate, the device is highly integrated simultaneously, but because power chip is in the inside of ECP module, upwards dispel the heat through base plate and inductance, downwards dispel the heat through the base plate, the heat dissipation passageway route is long, and coefficient of thermal conductivity is little and heat radiating area is little, leads to the heat dissipation relatively poor. The heat dissipation speed is low, so that the problem of chip damage or aging is easily caused, and the service life of the chip is greatly reduced.
Disclosure of Invention
The utility model aims to provide a power management chip packaging structure.
In order to achieve the purpose of the utility model, the technical scheme is as follows:
a power management chip packaging structure comprises a plastic package body, a second heat dissipation substrate and a heat dissipation assembly; the plastic package part body is positioned at the center of the top of the second heat dissipation substrate, and the side wall of the plastic package part body is attached to the heat dissipation assembly; the bottom wall of the heat dissipation assembly is attached to the top of the second heat dissipation substrate.
Further, the second heat dissipation substrate is attached to the plastic package body through the heat conduction silicon layer.
Further, the heat dissipation assembly comprises two L-shaped hollow structures, and a cooling medium flows in the hollow structures; one end of each L-shaped hollow structure is provided with a liquid inlet, and the other end is provided with a liquid outlet; the two L-shaped hollow structures enclose a rectangular shape, and the plastic package part body is wrapped inside.
Further, the two L-shaped hollow structures are a first heat dissipation component and a second heat dissipation component respectively; the liquid inlet of the first heat dissipation component is adjacent to the liquid outlet of the second heat dissipation component.
Further, the heat dissipation assembly is of a hollow structure, a plurality of stop strips are arranged in the hollow structure, and the stop strips are arranged along the direction parallel to the second heat dissipation substrate; the stop strip divides the heat dissipation assembly into a plurality of chambers, and the cooling medium flows in each chamber after entering the heat dissipation assembly.
Further, the plastic package body comprises a first substrate, a plastic package layer, a heat dissipation cover, a chip and at least one passive device, wherein the chip is arranged in the first substrate and is used for realizing DC/DC voltage conversion of the power supply module; the passive device is positioned on the surface of the first substrate, is connected with the chip through a circuit on the first substrate and is used for carrying out output processing on DC/DC conversion voltage; the plastic layer is used for wrapping the passive device, and the top of the passive device is exposed out of the plastic layer; and the heat dissipation cover is positioned on the top of the passive device and the plastic sealing layer.
Further, the first substrate is a DBC ceramic substrate.
Furthermore, the top of the passive device is also provided with a heat sink which is connected with the heat dissipation cover.
Compared with the prior art, the utility model has the remarkable advantages that: according to the power management chip packaging structure provided by the utility model, the heat dissipation is carried out on the chip packaging structure through the multidirectional heat dissipation channel: the heat dissipation assembly cools the conducted heat of the plastic package body, the plastic package layer and the first substrate; the top of the passive device is provided with a heat sink, and heat is dissipated through a heat dissipation cover at the top of the plastic package body; the DBC ceramic substrate with better heat conduction performance is selected to embed the chip, so that the heat of the chip can be rapidly transferred; the bottom wall of the first substrate of the plastic package body is tightly attached to the second heat dissipation substrate through the heat conduction silicon layer, the second heat dissipation substrate dissipates heat of the first substrate, meanwhile, the second heat dissipation substrate is larger than the plastic package body in area, and the spare part is just one attached surface of the heat dissipation assembly, so that heat conducted to the second substrate can be taken away by the heat dissipation assembly.
Drawings
Fig. 1 is a schematic diagram of the overall structure of the present utility model.
FIG. 2 is a cross-sectional view of the plane A-A of FIG. 1 in accordance with the present utility model.
Fig. 3 is a schematic diagram of the internal structure of the heat dissipating assembly according to the present utility model.
In the figure, 1 is a plastic package body; 11 is a chip; 12 is a passive device; 13, heat sink; 14, plastic sealing layer; 15 is a first substrate; 16 is a heat dissipating cover; 2 is a second heat dissipation substrate; 21 is a thermally conductive silicon layer; 3 is a first heat dissipation assembly; 31 is the liquid inlet of the first heat dissipation component; 32 is a first heat dissipating component liquid outlet; 33, stopping strips; 4 is a second heat dissipation assembly; 41 is the liquid inlet of the second heat dissipation component; 42 is the second heat sink assembly outlet.
Detailed Description
Embodiments of the present utility model will be described in detail below with reference to the accompanying drawings.
In order to make the technical solutions in the present specification better understood by those skilled in the art, the technical solutions in the embodiments of the present specification will be clearly and completely described below with reference to the drawings in the embodiments of the present specification, and it is obvious that the described embodiments are only some embodiments of the present specification, not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, shall fall within the scope of the present disclosure.
It should be noted that when an element is referred to as being disposed on another element, it may be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this specification belongs. The terminology used herein in the description of the specification is for the purpose of describing particular embodiments only and is not intended to be limiting of the specification. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
As shown in fig. 1, which is a schematic diagram of the overall structure of the package structure, the power management chip package structure includes: the power management chip plastic package comprises a power management chip plastic package body 1, a second heat dissipation substrate 2 and heat dissipation components wrapping the periphery of the plastic package body. The bottom wall of the plastic package body 1 is tightly attached to the second heat dissipation substrate 2 through the heat conduction silicon layer 21. The plastic package part body 2 is positioned at the center of the top of the second heat dissipation substrate, and the side wall of the plastic package part body is attached to the heat dissipation assembly; the bottom wall of the heat radiation component is attached to the periphery of the top of the second heat radiation substrate; the plastic package part body is wrapped through the second heat dissipation substrate and the heat dissipation assembly, and heat dissipation and cooling are conducted on the plastic package part body.
As shown in fig. 1 and 3, the heat dissipation assembly is a pair of L-shaped, thin plate hollow structures, and a chamber is arranged in the heat dissipation assembly to flow cooling medium. A pair of radiating assemblies 3,4 are arranged outside a power management chip packaging structure, and the first radiating assembly 3 and the second radiating assembly 4 are spliced into a rectangular shape to wrap the plastic package body. One port of the L-shaped radiating component is provided with a liquid inlet, and the other port of the L-shaped radiating component is provided with a liquid outlet. The liquid inlet 31 of the first heat sink assembly is adjacent to the liquid outlet 42 of the second heat sink assembly, and the liquid outlet 32 of the first heat sink assembly is adjacent to the liquid inlet 41 of the second heat sink assembly. Through this kind of setting method, not only can improve radiating efficiency, the radiating effect is even moreover.
Further, a plurality of stop bars 33 are arranged in each heat dissipation component, the stop bars 33 are arranged along the direction parallel to the second heat dissipation substrate 2, and the heat dissipation components are divided into a plurality of chambers through the stop bars 33. After entering through the liquid inlet of the heat dissipation component, the cooling medium flows in a plurality of chambers respectively, takes away the heat of the chip plastic package body and flows out through the liquid outlet. Through the cavity setting, can make the coolant evenly distributed who flows in the radiator module, when inlet input pressure is less, coolant input is less, through the cavity setting, ensures that the upper and lower of plastic envelope body side can both have coolant to pass through, ensures that the heat dissipation is even.
As shown in fig. 2, the internal structure of the plastic package body includes: the power module comprises a first substrate 15, a plastic sealing layer 14, a heat dissipation cover 16 and a chip 11, wherein the chip 11 is arranged inside the first substrate and is used for realizing DC/DC voltage conversion of the power module; at least one passive device 12 located on the surface of the first substrate, connected to the chip 11 through a line on the first substrate, for performing output processing on the DC/DC converted voltage; and the plastic sealing layer 14 is used for coating the passive device, and the top of the passive device is exposed outside the plastic sealing layer.
The number and types of passive devices are merely for convenience of description, the number and types are not limited, and the passive devices may be resistors, capacitors, inductors, converters, graduating devices, and other passive devices used in the power module as will occur to those skilled in the art, and the passive devices may be one or more, which is not limited in this utility model.
The main heat source of the power supply module is arranged in the chip, and the temperature of the chip has obvious influence on the performance of the power supply module, so according to the scheme provided by the embodiment of the utility model, the chip is arranged in the first substrate, the first substrate adopts the DBC ceramic substrate, and the heat generated by the chip is rapidly conducted out of the plastic package body through the excellent heat dissipation performance of the DBC ceramic substrate and then is dissipated through the heat dissipation component.
In the embodiment of the utility model, the passive device 12 is an inductor, and the heat sink 13 is adhered to the inductor through the heat-conducting glue on the inductor, so that the connection firmness of the heat sink 13 and the inductor can be further improved, gaps between the heat sink 13 and the inductor are filled, and the heat conduction efficiency is improved. The heat sink penetrates through the plastic sealing layer 14 and is connected with the heat dissipation cover 16, and heat generated during operation of the inductor is dissipated from the top of the plastic sealing body.
The power management chip packaging structure provided by the utility model is implemented through a multidirectional heat dissipation channel: 1. the heat dissipation assembly cools the conducted heat of the plastic package body, the plastic package layer and the first substrate; 2. the top of the passive device is provided with a heat sink, and heat is dissipated through a heat dissipation cover at the top of the plastic package body; 3. the DBC ceramic substrate with better heat conduction performance is selected to embed the chip, so that the heat of the chip can be rapidly transferred; 4. the bottom wall of the plastic package body is tightly attached to the second heat dissipation substrate through the heat conduction silicon layer, heat is dissipated through the second heat dissipation substrate, meanwhile, the area of the second heat dissipation substrate is larger than that of the plastic package body, and the spare part is just one attached surface of the heat dissipation assembly, so that heat conducted to the second substrate can be taken away by the heat dissipation assembly.
Claims (8)
1. The utility model provides a power management chip packaging structure which characterized in that: the power management chip packaging structure comprises a plastic package body (1), a second heat dissipation substrate (2) and a heat dissipation assembly; the plastic package part body is positioned at the center of the top of the second heat dissipation substrate, and the side wall of the plastic package part body is attached to the heat dissipation assembly; the bottom wall of the heat dissipation assembly is attached to the top of the second heat dissipation substrate.
2. The power management chip package structure of claim 1, wherein: the second heat dissipation substrate (2) is attached to the plastic package body (1) through the heat conduction silicon layer (21).
3. The power management chip package structure of claim 1, wherein: the heat dissipation assembly comprises two L-shaped hollow structures, and a cooling medium flows in the hollow structures; one end of each L-shaped hollow structure is provided with a liquid inlet, and the other end is provided with a liquid outlet; the two L-shaped hollow structures are enclosed into a rectangular shape, and the plastic package part body (1) is wrapped inside.
4. A power management chip package structure according to claim 3, wherein: the two L-shaped hollow structures are respectively a first heat dissipation component (3) and a second heat dissipation component (4); the liquid inlet (31) of the first heat dissipation assembly is adjacent to the liquid outlet (42) of the second heat dissipation assembly.
5. The power management chip package structure of claim 1, wherein: the heat dissipation assembly is of a hollow structure, a plurality of stop strips (33) are arranged in the hollow structure, and the stop strips are arranged along the direction parallel to the second heat dissipation substrate; the stop strip divides the heat dissipation assembly into a plurality of chambers, and the cooling medium flows in each chamber after entering the heat dissipation assembly.
6. The power management chip package structure of claim 1, wherein: the plastic package body comprises a first substrate (15), a plastic package layer (14), a heat dissipation cover (16), a chip (11) and at least one passive device (12), wherein the chip (11) is arranged inside the first substrate (15) and is used for realizing DC/DC voltage conversion of the power supply module; the passive device (12) is positioned on the surface of the first substrate (15), is connected with the chip (11) through a circuit on the first substrate and is used for carrying out output processing on DC/DC conversion voltage; a plastic layer (14) for wrapping the passive device (12) and exposing the top of the passive device (12) outside the plastic layer (14); a heat spreading cover (16) is located on top of the passive device (12) and the plastic layer (14).
7. The power management chip package structure of claim 6, wherein: the first substrate (15) is a DBC ceramic substrate.
8. The power management chip package structure of claim 6, wherein: and the top of the passive device (12) is also provided with a heat sink (13), and the passive device is connected with a heat dissipation cover (16) through the heat sink (13).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321342763.5U CN219917149U (en) | 2023-05-30 | 2023-05-30 | Power management chip packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321342763.5U CN219917149U (en) | 2023-05-30 | 2023-05-30 | Power management chip packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219917149U true CN219917149U (en) | 2023-10-27 |
Family
ID=88430137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321342763.5U Active CN219917149U (en) | 2023-05-30 | 2023-05-30 | Power management chip packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219917149U (en) |
-
2023
- 2023-05-30 CN CN202321342763.5U patent/CN219917149U/en active Active
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