CN215119536U - Semiconductor laser - Google Patents
Semiconductor laser Download PDFInfo
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- CN215119536U CN215119536U CN202120878495.3U CN202120878495U CN215119536U CN 215119536 U CN215119536 U CN 215119536U CN 202120878495 U CN202120878495 U CN 202120878495U CN 215119536 U CN215119536 U CN 215119536U
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Abstract
The application provides a semiconductor laser relates to semiconductor technology field, includes the chip and establishes anodal radiator and the negative pole radiator in the chip both sides respectively, all has heat dissipation channel in anodal radiator and the negative pole radiator, and the heat dissipation channel is held to have the circulated coolant liquid in. The cooling liquid circularly flows in the heat dissipation channel, absorbs heat generated by the chip, and exchanges heat with the chip to finish heat dissipation of the chip. The double-sided heat dissipation mode with the heat dissipation structures arranged on the two sides of the chip has a heat dissipation effect which is stronger than that of single-sided heat dissipation. The thermal resistance of the semiconductor laser can be effectively reduced, the overall heat dissipation capacity is improved, and the high-power laser output of the semiconductor laser is realized. The heat exchange heat dissipation mode can dissipate heat of the positive radiator and the negative radiator, so that the semiconductor laser can be applied to not only a horizontal array but also a vertical array, and the application of the semiconductor laser is wide.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a semiconductor laser.
Background
In the prior art, a semiconductor laser array chip is packaged to a microchannel radiator for heat dissipation, a p surface of a p-n junction of a laser chip is packaged on the microchannel radiator, and an n surface is connected with a laser power supply in a gold wire bonding or thin copper layer packaging mode.
SUMMERY OF THE UTILITY MODEL
An object of the embodiment of the application is to provide a semiconductor laser, improve heat-sinking capability, realize high power laser output.
An aspect of the embodiment of the application provides a semiconductor laser, include the chip and establish respectively the anodal radiator and the negative pole radiator of chip both sides, anodal radiator with all have the heat dissipation channel in the negative pole radiator, the heat dissipation channel holds the circulated coolant liquid in.
The anode radiator and the cathode radiator are added with the circulated cooling liquid in the heat dissipation channel, and heat exchange of the chip is completed through flowing of the cooling liquid, so that heat dissipation of the chip is realized.
Optionally, a connection bonding layer is respectively disposed between the chip and the positive heat sink and between the chip and the negative heat sink.
Optionally, an end surface of the chip, an end surface of the connection bonding layer, an end surface of the positive heat sink, and an end surface of the negative heat sink are flush.
Therefore, the structure arrangement of the other end face is facilitated, all devices are gathered at one end as much as possible, and other structures are conveniently arranged at the other end.
Optionally, a sealing ring is further disposed between the positive radiator and the negative radiator, the sealing ring is located at an orifice of a liquid through hole of the positive radiator and the negative radiator, and the liquid through hole is communicated with the heat dissipation channel.
The sealing ring is used for sealing the orifices of the liquid through holes of the anode radiator and the cathode radiator. The positive radiator and the negative radiator are respectively provided with a liquid through hole, the liquid through holes are communicated to respective heat dissipation channels, and cooling liquid flows into or flows out of the heat dissipation channels through the liquid through holes, namely, the cooling liquid enters the heat dissipation channels through the liquid through holes, and flows out of the other liquid through hole after heat exchange is completed in the heat dissipation channels, so that the cooling liquid circularly flows.
Optionally, the liquid through hole includes a liquid inlet hole and a liquid outlet hole, the liquid inlet hole is used for inputting the cooling liquid, and the cooling liquid flows into the heat dissipation channel through the liquid inlet hole; the liquid outlet hole is used for outputting the cooling liquid flowing into the heat dissipation channel.
After flowing into the heat dissipation channel from the liquid inlet hole, the cooling liquid completes heat exchange with the chip, flows out from the liquid outlet hole, takes away heat, and is circulated in a reciprocating manner to dissipate heat of the chip.
Optionally, the positive heat sink and the negative heat sink are connected by at least one insulating structural adhesive.
The insulating structural adhesive has excellent insulating property and plays a role in supporting and connecting the positive radiator and the negative radiator.
The positive radiator is opposite to the negative radiator, and the chip, the first connecting bonding layer and the second connecting bonding layer are clamped between the positive radiator and the negative radiator.
Optionally, the material of the connection bonding layer includes a metal solder or a heat and electricity conductive adhesive, so that the chip can be electrically connected with the positive electrode and the negative electrode.
Optionally, the material of the positive heat sink and the material of the negative heat sink are both high thermal conductivity materials. The high-thermal-conductivity material can accelerate the heat dissipation speed and further improve the heat dissipation performance of the semiconductor laser.
The semiconductor laser that this application embodiment provided sets up anodal radiator and negative pole radiator respectively in the both sides of chip, and anodal radiator is located the p face of chip, and the negative pole radiator is located the n face of chip, all is provided with heat dissipation channel in anodal radiator and the negative pole radiator, and the coolant liquid is through the circulation flow in heat dissipation channel, absorbs the heat that the chip produced, carries out the heat exchange with the chip to the completion is to the heat dissipation of chip. The double-sided heat dissipation mode with the heat dissipation structures arranged on the two sides of the chip has a heat dissipation effect which is stronger than that of single-sided heat dissipation. And the circulating cooling liquid is adopted, and the heat of the chip, the anode radiator and the cathode radiator is taken away for heat dissipation through the circulating flow of the cooling liquid, so that the heat of the chip is dissipated, the anode radiator and the cathode radiator can be dissipated, the thermal resistance of the semiconductor laser can be effectively reduced, the integral heat dissipation capacity is improved, and the high-power laser output of the semiconductor laser is realized. The heat dissipation mode of the heat exchange can dissipate heat of the positive radiator and the negative radiator, so that the semiconductor laser can be applied to a horizontal array and a vertical array, and during the vertical array, the heat dissipation capacity of the whole laser is not affected due to the fact that the positive radiator and the negative radiator can dissipate heat through flowing of cooling liquid, and the application of the semiconductor laser is wide.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments of the present application will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and that those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of a semiconductor laser provided in an embodiment of the present application;
fig. 2 is a schematic diagram of an exploded structure of a semiconductor laser provided in an embodiment of the present application;
fig. 3 is a schematic view of the structure of fig. 1 from another view angle.
Icon: 1-positive radiator; 2-a first bonding layer; 3-chip; 4-a second connecting anchor layer; 5-negative radiator; 6-insulating structural adhesive; 7-sealing ring; 8-liquid inlet hole; 9-liquid outlet holes; 10-heat dissipation channel.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application.
In the description of the present application, it should be noted that the terms "inside", "outside", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships that the products of the application usually place when using, and are only used for convenience in describing the present application and simplifying the description, but do not indicate or imply that the devices or elements that are referred to must have a specific orientation, be constructed in a specific orientation, and operate, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance.
It should also be noted that, unless expressly stated or limited otherwise, the terms "disposed" and "connected" are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
In the prior art, a semiconductor laser array chip is generally packaged to a microchannel radiator for heat dissipation, so that a p surface of a p-n junction of a laser chip is packaged on the microchannel radiator, and an n surface is connected with a laser power supply in a gold wire bonding or thin copper layer packaging mode.
And current double-sided heat radiation structure's semiconductor laser on the market, what adopt is the conduction cooling mode of high heat conduction material, lead away the heat through high heat conduction material, the heat-sinking capability of this kind of conduction cooling mode is still very limited, and, conduction cooling's double-sided heat radiation structure's semiconductor laser can't realize the perpendicular array of a plurality of lasers, the chip gives heat radiation structure with the heat conduction, heat radiation structure itself can be seen as the heat source, during perpendicular array, can't dispel the heat between two adjacent heat radiation structure, consequently this kind of conduction cooling mode's semiconductor laser has certain application limitation when perpendicular array.
In order to solve the above problems, embodiments of the present application provide a semiconductor laser, which employs a double-sided microchannel liquid-cooled heat dissipation structure, and both sides of a p-n junction of a chip 3 are both packaged on a microchannel heat sink.
And moreover, the double-sided micro-channel liquid cooling and heat dissipation structure is adopted, so that the use of a plurality of laser horizontal arrays can be realized, the use of a plurality of laser vertical arrays can also be realized, and the application range is wider.
Specifically, the semiconductor laser provided by the embodiment of the present application includes a chip 3, and a positive heat sink 1 and a negative heat sink 5 respectively disposed on two sides of the chip 3, where the positive heat sink 1 and the negative heat sink 5 both have a heat dissipation channel 10 therein, and a recyclable coolant is contained in the heat dissipation channel 10.
The chip 3, the positive radiator 1 and the negative radiator 5 are arranged in a stacked mode in the vertical direction, the positive radiator 1 and the negative radiator 5 are respectively arranged on two sides of a p-n junction of the chip 3, the p surface close to the chip 3 is the positive radiator 1, and the n surface close to the chip 3 is the negative radiator 5.
Thus, when the positive radiator 1 and the negative radiator 5 are respectively provided on both sides of the chip 3, the chip 3 is sandwiched between the positive radiator 1 and the negative radiator 5, the positive radiator 1 is connected to the positive electrode, and the negative radiator 5 is connected to the negative electrode, so that the chip 3 can be operated by conducting the positive electrode and the negative electrode.
The structure of positive radiator 1 and negative pole radiator 5 is the same, all have heat dissipation channel 10, heat dissipation channel 10 is used for holding the coolant liquid, through the circulation that flows of coolant liquid in heat dissipation channel 10, the heat of chip 3 is absorbed to the coolant liquid, and take away the heat through the flow of coolant liquid, realize positive radiator 1, negative pole radiator 5 to the heat exchange of chip 3 both sides simultaneously, accomplish the heat dissipation to chip 3, compare in the single face heat dissipation among the prior art, it is obvious that the radiating effect of the equal radiating double-sided heat dissipation mode in this application chip 3 both sides is better.
Specifically, the heat dissipation channel 10 may be a micro channel, and the heat dissipation channel 10 may also be a macro channel, so as to achieve the purpose of accommodating the cooling liquid to dissipate heat of the chip 3.
The cooling liquid comprises deionized water, methanol or ethanol, etc.
The anode radiator 1 and the cathode radiator 5 add the circulative cooling liquid in the heat dissipation channel 10, and complete the heat exchange of the chip 3 through the flowing of the cooling liquid, thereby realizing the heat dissipation of the chip 3. The structure can be used for a plurality of semiconductor laser horizontal arrays and can also be used for a plurality of semiconductor laser vertical arrays, and the application is not limited.
When a plurality of semiconductor laser vertical arrays are used, the anode radiator 1 and the cathode radiator 5 of adjacent semiconductor lasers can radiate a chip 3 due to the circulation flow of the cooling liquid of the internal cooling channel 10 per se, and the anode radiator 1 and the cathode radiator 5 per se can radiate heat through the circulation flow kinetic energy of the cooling liquid, so that when the semiconductor lasers are vertically stacked, the heat radiation performance of the whole vertical array structure is better, compared with the semiconductor lasers of the existing conduction cooling double-sided heat radiation structure, the heat radiation performance of the radiators is blocked when the semiconductor lasers are vertically arrayed due to the heat radiation mode, and the plurality of laser vertical arrays cannot be realized.
The materials of the anode radiator 1 and the cathode radiator 5 are high-thermal-conductivity materials including but not limited to copper, aluminum, copper-clad ceramic and the like, and the high-thermal-conductivity materials can accelerate the heat dissipation speed and further improve the heat dissipation performance of the semiconductor laser.
The semiconductor laser that this application embodiment provided sets up anodal radiator 1 and negative pole radiator 5 respectively in the both sides of chip 3, and anodal radiator 1 is located the p face of chip 3, and negative pole radiator 5 is located the n face of chip 3, all is provided with heat dissipation channel 10 in anodal radiator 1 and the negative pole radiator 5, and the coolant liquid is through the circulation flow in heat dissipation channel 10, absorbs the heat that chip 3 produced, carries out the heat exchange with chip 3 to accomplish the heat dissipation to chip 3. This kind of two-sided heat dissipation mode that all sets up heat radiation structure in chip 3 both sides, its radiating effect compares in single face heat dissipation, and the heat-sinking capability is stronger. And moreover, the circulating cooling liquid is adopted, and the heat of the chip 3, the anode radiator 1 and the cathode radiator 5 is taken away for heat dissipation through the circulating flow of the cooling liquid, so that the heat of the chip 3 is dissipated, the anode radiator 1 and the cathode radiator 5 can also be dissipated, the thermal resistance of the semiconductor laser can be effectively reduced, the integral heat dissipation capability is improved, and the high-power laser output of the semiconductor laser is realized. The heat dissipation mode of the heat exchange can dissipate heat of the positive radiator 1 and the negative radiator 5, so that the semiconductor laser can be applied to a horizontal array and a vertical array, and during the vertical array, the heat dissipation capacity of the whole semiconductor laser is not influenced because the positive radiator 1 and the negative radiator 5 can dissipate heat through the flowing of cooling liquid, so that the application of the semiconductor laser has universality.
Further, a connecting bonding layer is respectively provided between the chip 3 and the positive heat sink 1, and between the chip 3 and the negative heat sink 5.
That is, a connection bonding layer is interposed between the chip 3 and the positive heat sink 1, and a connection bonding layer is also interposed between the chip 3 and the negative heat sink 5.
The material of the connecting and bonding layer comprises metal solder or heat-conducting and electric-conducting glue, so that the chip 3 can be conducted with the positive electrode and the negative electrode. The bonding layer may be a relatively soft metal solder or a thermally and electrically conductive adhesive, and the material may be a highly thermally conductive material, including but not limited to indium, tin, indium tin, nano silver adhesive, and the like.
Wherein, the connecting and combining layer close to the anode radiator 1 is a first connecting and combining layer 2, and the connecting and combining layer close to the cathode radiator 5 is a second connecting and combining layer 4.
As shown in fig. 3, the positive electrode heat spreader 1 and the negative electrode heat spreader 5 are opposed, the chip 3, the first bonding layer 2, and the second bonding layer 4 are sandwiched between the positive electrode heat spreader 1 and the negative electrode heat spreader 5, and the chip 3, the first bonding layer 2, and the second bonding layer 4 are located between the positive electrode heat spreader 1 and the negative electrode heat spreader 5, and the chip 3 is located between the first bonding layer 2 and the second bonding layer 4.
As shown in fig. 2, an end face of the chip 3, an end face of the connecting and bonding layer, an end face of the positive heat sink 1, and an end face of the negative heat sink 5 are flush with each other, that is, on an end face, the chip 3, the connecting and bonding layer, the positive heat sink 1, and the negative heat sink 5 are flush with each other, which is beneficial to heat dissipation of the semiconductor laser chip and does not affect the emission of laser light of the chip.
For example, the positive radiator 1 and the negative radiator 5 extend in the opposite direction of the end face, a sealing ring 7 is further disposed between the positive radiator 1 and the negative radiator 5 in a projection area in the extending direction, the sealing ring 7 is located at an orifice of a liquid through hole of the positive radiator 1 and the negative radiator 5, and the liquid through hole is communicated with the heat dissipation channel 10.
In the embodiment of the present application, a seal ring 7 is disposed between the positive radiator 1 and the negative radiator 5 in the projection region of the extending direction, and the seal ring 7 is used for sealing the orifices of the liquid through holes of the positive radiator 1 and the negative radiator 5.
The sealing ring 7 may be an insulating and elastic rubber, and the material includes but is not limited to fluororubber, silicon rubber, etc.
The positive radiator 1 and the negative radiator 5 are respectively provided with a liquid through hole, the liquid through holes are communicated to the respective heat dissipation channels 10, and the cooling liquid flows into or flows out of the heat dissipation channels 10 through the liquid through holes, namely, the cooling liquid enters the heat dissipation channels 10 through the liquid through holes, and after heat exchange is completed in the heat dissipation channels 10, the cooling liquid flows out from the other liquid through hole, so that the cooling liquid circularly flows.
The liquid through hole comprises a liquid inlet hole 8 and a liquid outlet hole 9, the liquid inlet hole 8 is used for inputting cooling liquid, and the cooling liquid flows into the heat dissipation channel 10 through the liquid inlet hole 8; the liquid outlet hole 9 is used for outputting the cooling liquid flowing into the heat dissipation channel 10.
After flowing into the heat dissipation channel 10 from the liquid inlet hole 8, the cooling liquid completes heat exchange with the chip 3, flows out through the liquid outlet hole 9, takes away heat, and is circulated in a reciprocating manner to dissipate heat of the chip 3.
As shown in fig. 1, the positive radiator 1 and the negative radiator 5 are respectively provided with a liquid inlet hole 8, and the positive radiator 1 and the negative radiator 5 are also respectively provided with a liquid outlet hole 9, so as to complete double-sided heat dissipation of the chip 3.
The positive radiator 1 and the negative radiator 5 are connected through at least one insulating structure glue 6, the insulating structure glue 6 has excellent insulating property, the liquid state and the certain viscosity are obtained before solidification, the solid state after solidification has certain mechanical strength, the effect of connecting and supporting the positive radiator 1 and the negative radiator 5 is achieved, and the insulating structure glue is also used for insulating a positive electrode and a negative electrode, three insulating structure glues 6 are arranged in the embodiment, and the three insulating structure glues 6 are located in a space between the positive radiator 1 and the negative radiator 5 except for a semiconductor laser chip 3 and a sealing ring 7.
In summary, the chip 3 of the semiconductor laser is located between the positive radiator 1 and the negative radiator 5, the first connecting layer 2 is located between the positive electrode of the chip 3 and the positive radiator 1, the second connecting layer 4 is located between the negative electrode of the chip 3 and the negative radiator 5, the sealing ring 7 is located between the liquid inlet hole 8 and the liquid outlet hole 9 of the positive radiator 1 and the negative radiator 5, and the insulating structure glue 6 is located between the positive radiator 1 and the negative radiator 5 except for the semiconductor laser chip 3 and the sealing ring 7. The radiator is connected with an insulating structure glue 6 in the area where the radiator extends beyond the chip 3, a liquid inlet hole 8 and a liquid outlet hole 9 of the anode radiator 1 and the cathode radiator 5 are respectively sealed by a sealing ring 7, and the insulating structure glue 6 is used for connecting the anode radiator 1 and the cathode radiator 5 and clamping and fastening the sealing ring 7.
The semiconductor laser provided by the embodiment of the application adopts a bidirectional heat dissipation mode of circulating cooling liquid in the heat dissipation channel 10, has good heat dissipation performance, and can reduce thermal resistance; the comprehensive heat dissipation capability is improved, so that the laser output power of the semiconductor laser is improved; the packaging structure is simple, the array combination structure of the semiconductor laser in the horizontal direction and the vertical direction can be realized, and the output power of the semiconductor laser is further improved; the use cost of the semiconductor laser can be reduced due to the significant increase in the power of the laser.
The above description is only an example of the present application and is not intended to limit the scope of the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (8)
1. A semiconductor laser, comprising: the chip comprises a chip, and a positive radiator and a negative radiator which are respectively arranged on two sides of the chip, wherein heat dissipation channels are respectively arranged in the positive radiator and the negative radiator, and a circulated cooling liquid is contained in the heat dissipation channels.
2. The semiconductor laser of claim 1, wherein a bonding layer is disposed between the chip and the positive heat sink and between the chip and the negative heat sink.
3. The semiconductor laser of claim 2, wherein an end face of the die, an end face of the connecting bonding layer, an end face of the positive heat sink, and an end face of the negative heat sink are flush.
4. A semiconductor laser as claimed in claim 3 wherein a sealing ring is further provided between the positive and negative radiators, the sealing ring is located at the aperture of the liquid through holes of the positive and negative radiators, and the liquid through holes communicate with the heat dissipation channel.
5. The semiconductor laser of claim 4, wherein the liquid through hole comprises a liquid inlet hole and a liquid outlet hole, the liquid inlet hole is used for inputting the cooling liquid, and the cooling liquid flows into the heat dissipation channel through the liquid inlet hole; the liquid outlet hole is used for outputting the cooling liquid flowing into the heat dissipation channel.
6. The semiconductor laser of claim 1, wherein the positive heat sink and the negative heat sink are connected by at least one insulating structural adhesive.
7. A semiconductor laser as claimed in claim 2 wherein the material of the connecting bonding layer comprises a metallic solder or a thermally and electrically conductive glue.
8. The semiconductor laser of claim 1, wherein the material of the positive heat sink and the negative heat sink are both high thermal conductivity materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120878495.3U CN215119536U (en) | 2021-04-26 | 2021-04-26 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120878495.3U CN215119536U (en) | 2021-04-26 | 2021-04-26 | Semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215119536U true CN215119536U (en) | 2021-12-10 |
Family
ID=79272503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120878495.3U Active CN215119536U (en) | 2021-04-26 | 2021-04-26 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215119536U (en) |
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2021
- 2021-04-26 CN CN202120878495.3U patent/CN215119536U/en active Active
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