CN116466208A - Microsecond-level pulse forward surge current testing system - Google Patents
Microsecond-level pulse forward surge current testing system Download PDFInfo
- Publication number
- CN116466208A CN116466208A CN202310569779.8A CN202310569779A CN116466208A CN 116466208 A CN116466208 A CN 116466208A CN 202310569779 A CN202310569779 A CN 202310569779A CN 116466208 A CN116466208 A CN 116466208A
- Authority
- CN
- China
- Prior art keywords
- current
- voltage
- pulse
- sampler
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 56
- 239000003990 capacitor Substances 0.000 claims description 45
- 238000004146 energy storage Methods 0.000 claims description 21
- 238000001514 detection method Methods 0.000 claims description 17
- 230000001105 regulatory effect Effects 0.000 claims description 11
- 238000005070 sampling Methods 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 239000000523 sample Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 230000001276 controlling effect Effects 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 4
- 230000009471 action Effects 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 2
- 238000012986 modification Methods 0.000 abstract description 2
- 230000004048 modification Effects 0.000 abstract description 2
- 230000008569 process Effects 0.000 abstract description 2
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 208000025274 Lightning injury Diseases 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention discloses a microsecond-level pulse forward surge current testing system, which comprises a device clamp; the device testing unit is used for detecting reverse leakage current and forward conduction voltage drop of the component; the pulse unit is used for acquiring the instant current and transmitting the instant current to the components to be tested; the power supply unit is used for supplying power to the pulse unit; and the control unit is used for controlling the start and stop of the device testing unit, the pulse unit and the power supply unit and the parameter modification. The invention can generate short pulse large current below 10us by using a simpler test circuit, and is used for simulating the limit forward surge current of the test diode; the rising edge and the falling edge of the short pulse high current generated by the device can be controlled to be approximately 1us or less and 2us or less; after the test, the device can detect reverse leakage current and forward conduction voltage drop of the tested device, so that the state result of the device can be judged conveniently and rapidly, and the pre-judging function improves the safety, convenience and quickness in the test process.
Description
Technical Field
The invention relates to a microsecond-level pulse forward surge current testing system, which is suitable for the technical field of diode testing.
Background
When the power diode is applied under the working conditions of alternating current power-on or lightning stroke and the like, a certain forward surge current impact can be born, and the diode is damaged due to excessive surge current, so that the anti-surge capability of the diode and a transistor device (such as an IGBT (insulated gate bipolar transistor) containing a parasitic body diode is an important standard for reliability assessment, and the power diode is divided into two test forms of 10ms (8.3 ms) forward brown wave and 10us (pulse square wave) according to test current excitation.
The short pulse limit surge current testing system is used for evaluating the limit forward surge current IF.Max parameter of the SiC diode device in the research and development stage, and the parameter is also called peak surge current in a discontinuous conduction mode. At present, only a few large-scale nationwide semiconductor companies have the capability to test the very important limit parameter (Maximum rating). Since the test excitation with the test parameter of if.max is a pulse square wave current of 10us, the rising/falling edges are required to be lower than 1us while the current reaching the kA level is generated, and many design schemes in the industry currently have the defects that the rising edge and the falling edge of the pulse current cannot be within 2ns, so that the distortion of the test waveform is caused, and when the test current is larger, the rising/falling time of the pulse is longer and does not meet the test standard requirement.
Disclosure of Invention
The invention aims to provide a microsecond-level pulse forward surge current testing system.
The technical solution for realizing the purpose of the invention is as follows: a microsecond level pulse forward surge current testing system comprising:
the device clamp is used for fixing the components to be tested;
the device testing unit is used for detecting reverse leakage current and forward conduction voltage drop of the component;
the pulse unit is used for acquiring the instant current and transmitting the instant current to the components to be tested;
the power supply unit is used for supplying power to the pulse unit; and
and the control unit is used for controlling the start and stop of the device testing unit, the pulse unit and the power supply unit and modifying parameters.
Further, the device test unit includes a reverse leakage current detection circuit and a forward conduction voltage drop detection circuit:
the reverse leakage current detection circuit comprises a constant current source generator, a current limiting protection resistor R1, a current sampler A1, a voltage sampler V1 and a tested device power diode D1, wherein one end of the constant current source generator is connected with one end of the current limiting protection resistor R1, the other end of the current limiting protection resistor R1 is connected with the positive electrode of the tested device power diode D1, the negative electrode of the tested device power diode D1 is connected with the other end of the current limiting protection resistor R1, the current sampler A1 is arranged between the current limiting protection resistor R1 and the tested device power diode D1, one end of the voltage sampler V1 is arranged between the current sampler and the tested device power diode D1, and the other end of the voltage sampler V1 is arranged between the constant current source generator and the tested device power diode D1;
the forward conduction voltage drop detection circuit comprises a constant voltage source generator, a current limiting protection resistor R2, a current sampler A2, a voltage sampler V2 and a device power diode D2 to be detected, wherein one end of the constant voltage source generator is connected with one end of the current limiting protection resistor R2, the other end of the current limiting protection resistor R2 is connected with the positive electrode of the device power diode D2 to be detected, the negative electrode of the device power diode D2 to be detected is connected with the other end of the current limiting protection resistor R2, the current sampler A2 is arranged between the current limiting protection resistor R2 and the device power diode D2 to be detected, one end of the voltage sampler V2 is arranged between the current sampler and the device power diode D2 to be detected, and the other end of the voltage sampler V2 is arranged between the constant voltage source generator and the device power diode D2 to be detected.
Further, the power supply unit includes:
the rectifier bridge stack is used for converting alternating current commercial power into direct current voltage;
the voltage regulating switch tube is used for transmitting direct-current voltage to the energy storage capacitor stack;
the energy storage capacitor stack is used for acquiring and storing direct-current voltage;
the sampler is used for obtaining the terminal voltage of the energy storage capacitor stack to divide the voltage and then generating sampling voltage;
the DA converter is used for converting the sampling voltage, comparing the sampling voltage with the set voltage and uploading a comparison result; and
and the PWM pulse width modulator is used for acquiring the comparison result and generating a pulse modulation signal to drive the voltage regulating switch tube so as to form closed-loop control.
Further, the pulse unit includes:
the pulse switch is used for conveying the voltage of the energy storage capacitor stack to the components to be tested;
the current probe is used for outputting a current signal of the pulse switch in real time; and
and the IGBT driver is used for acquiring the pulse signal of the control unit, amplifying the pulse signal and then performing switching action.
Further, the touch screen is connected with the control unit.
Further, the power supply unit further comprises an electrical isolation switch arranged between the energy storage capacitor stack and the sampler, and the electrical isolation switch is used for safely and physically isolating the test loop from the mains supply loop.
Further, the energy storage capacitor stack consists of two capacitors C1 and C2 which are connected in parallel, the capacitor C1 is a thin film capacitor, and the capacitor C2 is an aluminum electrolytic capacitor.
Compared with the prior art, the invention has the remarkable advantages that: the invention can generate short pulse large current below 10us by using a simpler test circuit, and is used for simulating the limit forward surge current of the test diode; the rising edge and the falling edge of the short pulse high current generated by the device can be controlled to be approximately 1us or less and 2us or less; after the test, the device can detect reverse leakage current and forward conduction voltage drop of the tested device, so that the state result of the device can be judged conveniently and rapidly, and the pre-judging function improves the safety, convenience and quickness in the test process.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following description of the embodiments of the present invention or the drawings required to be used in the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only embodiments of the present invention, and other drawings may be obtained according to the provided drawings without inventive effort to a person skilled in the art.
FIG. 1 is a circuit diagram of a test system of the present invention;
FIG. 2 is a circuit diagram of a reverse leakage current detection circuit of the present invention;
fig. 3 is a circuit diagram of the forward conduction voltage drop detection of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
1-3, a microsecond pulse forward surge current testing system comprises a device clamp, a device testing unit, a pulse unit, a power supply unit, a control unit and a touch screen, wherein the touch screen is connected with the control unit, components to be tested are fixed through the device clamp, and components to be tested in different packages are fixed through different clamps. In addition, safety protection measures such as a transparent safety cover are further arranged on the device clamp, and the device to be tested can be electrified only on the premise that the safety cover is closed, so that the device to be tested is a conventional technology and is not repeated.
The device test unit comprises a reverse leakage current detection circuit and a forward conduction voltage drop detection circuit:
the reverse leakage current detection circuit comprises a constant current source generator, a current limiting protection resistor R1, a current sampler A1, a voltage sampler V1 and a tested device power diode D1, wherein one end of the constant current source generator is connected with one end of the current limiting protection resistor R1, the other end of the current limiting protection resistor R1 is connected with the positive electrode of the tested device power diode D1, the negative electrode of the tested device power diode D1 is connected with the other end of the current limiting protection resistor R1, the current sampler A1 is arranged between the current limiting protection resistor R1 and the tested device power diode D1, one end of the voltage sampler V1 is arranged between the current sampler and the tested device power diode D1, and the other end of the voltage sampler V1 is arranged between the constant current source generator and the tested device power diode D1;
the forward conduction voltage drop detection circuit comprises a constant voltage source generator, a current limiting protection resistor R2, a current sampler A2, a voltage sampler V2 and a device power diode D2 to be detected, wherein one end of the constant voltage source generator is connected with one end of the current limiting protection resistor R2, the other end of the current limiting protection resistor R2 is connected with the positive electrode of the device power diode D2 to be detected, the negative electrode of the device power diode D2 to be detected is connected with the other end of the current limiting protection resistor R2, the current sampler A2 is arranged between the current limiting protection resistor R2 and the device power diode D2 to be detected, one end of the voltage sampler V2 is arranged between the current sampler and the device power diode D2 to be detected, and the other end of the voltage sampler V2 is arranged between the constant voltage source generator and the device power diode D2 to be detected.
The tested component is damaged but not necessarily completely damaged after the limited current impact, and the performance form is that the reverse leakage current is increased or the forward conduction voltage drop is reduced, so that after the component is subjected to surge test once, the two performances are tested through the reverse leakage current detection circuit and the forward conduction voltage drop detection circuit to determine whether to carry out the next test. The device performance testing part performs physical switching through the relay, and judges whether the tested device is damaged or not through the device testing unit.
The power supply unit comprises a rectifier bridge reactor UR, a voltage regulating switch tube (MOS tube) D3, an energy storage capacitor reactor, a sampler, a DA converter, a PWM pulse width modulator and an electric isolating switch, wherein the sampler comprises a resistor R4, a resistor R5 and an operational amplifier U1, the positive electrode of the rectifier bridge reactor is connected with the drain electrode of the voltage regulating switch tube, the grid electrode of the voltage regulating switch tube is connected with the PWM pulse width modulator, the negative electrode of the rectifier bridge reactor is connected with one end of the electric isolating switch, the source electrode of the voltage regulating switch tube is connected with the other end of the electric isolating switch, the PWM pulse width modulator is connected with the output end of the transport amplifier U1, the positive input end of the transport amplifier is connected between the resistor R4 and the resistor R5 which are connected in series, one end of the resistor R4 is connected between the voltage regulating switch tube and the electric isolating switch, the negative input end of the transport amplifier is connected with the DA converter and then connected with the control unit. The electric isolating switch is arranged between the energy storage capacitor stack and the sampler, the electric isolating switch is used for safely and physically isolating the test loop from the mains supply loop so as to prevent an operator from electric shock, the energy storage capacitor stack consists of two capacitors C1 and C2 which are connected in parallel, the capacitor C1 is a thin film capacitor, the capacitor C2 is an aluminum electrolytic capacitor, the aluminum electrolytic capacitor and the thin film capacitor are combined, the aluminum electrolytic capacitor stores main discharge charges, the thin film capacitor stores a small amount of discharge charges, and when wiring, the thin film capacitor is as close to an output end as possible, and the lead length is reduced. The film capacitor plays a role in starting the discharge instantly, and makes up the characteristic of insufficient high-frequency response of the aluminum electrolytic capacitor, thereby improving the discharge performance of the device.
The alternating current commercial power is firstly subjected to rectifier bridge pile to generate direct current voltage of about 310V on a rectifier capacitor, a voltage regulating switch tube charges an energy storage capacitor pile at a later stage in a pulse width modulation mode, the end voltage of the energy storage capacitor pile is divided by a voltage dividing resistor R4 and a resistor R5 to generate sampling voltage, the sampling voltage is compared with a set voltage converted by a DA converter, if the sampling voltage is higher than the set voltage, the sampling voltage is fed back to a PWM pulse width modulator, and the PWM pulse width modulator reduces the output duty ratio according to an algorithm, so that the end voltage of the energy storage capacitor pile is reduced. Otherwise, the PWM pulse width modulator increases the output duty ratio according to the algorithm, increases the end voltage of the energy storage capacitor stack, generates a pulse width modulation signal according to the feedback comparison result, drives the voltage regulating switch tube to form a closed-loop control structure, and enables the upper end voltage of the energy storage capacitor stack to be stabilized at a set voltage value.
The energy storage capacitor stack provides all energy required by the test for the test components and parts, has two indexes of high capacity and high response speed, ensures that the rising/falling edges of the current are within 1us while the kA-level discharge current is generated.
The pulse unit comprises a pulse switch, a current probe and an IGBT driver, wherein the input end of the pulse switch is connected with the IGBT driver and then connected with the control unit, the output end of the pulse switch is connected with the current probe, the pulse switch part is used for controlling the on-off of surge current and sending the energy on the energy storage capacitor stack to the tested component, the pulse switch in the device adopts a high-power IGBT, the requirements of switching time and instantaneous current in 10us are met, and the instantaneous current can be obtained and sent to the component to be tested; the us-level pulse signals sent by the control unit and the power supply unit are amplified by the IGBT driving circuit to generate strong enough driving signals to drive the IGBT to conduct switching action, and the IGBT module at the later stage is driven to ensure that the IGBT module works reliably, stably and safely.
The control unit is a control core of the whole equipment and is a digital control system consisting of a microcontroller for controlling the work of each part of the equipment. The user can perform various operations through the touch screen, including the start and stop of the control device testing unit, the pulse unit and the power supply unit, and parameter modification.
The design scheme of the system has the following functional and technical index detailed requirements: the design index of the 5-10 us short pulse limit surge test system is maximum current 3000A, pulse time is 10us, and current waveform is standard pulse square wave.
The key technical indexes to be realized are as follows:
1. the maximum surge current if.max may be tested: 2500A or more (10 us current pulse square wave)
2. Surge pulse current rise time: (Tr) <2us (10% -90% IF. Max)
Surge pulse current rise time: (Tf) <2us (90% -10% IF. Max)
3. Pulse current top area overshoot spike: <5% if. Max
Pulse current bottom current oscillation amplitude: <5% if. Max
4. The system provides an external monitoring port to facilitate access to oscilloscope probes (other than device configuration).
5. The electrical property detection of the test sample after the test is realized, and the convenience and the safety are realized.
The present invention is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.
Claims (7)
1. A microsecond-level pulse forward surge current testing system, comprising:
the device clamp is used for fixing the components to be tested;
the device testing unit is used for detecting reverse leakage current and forward conduction voltage drop of the component;
the pulse unit is used for acquiring the instant current and transmitting the instant current to the components to be tested;
the power supply unit is used for supplying power to the pulse unit; and
and the control unit is used for controlling the start and stop of the device testing unit, the pulse unit and the power supply unit and modifying parameters.
2. The microsecond-level pulse forward surge current testing system according to claim 1, wherein the device testing unit comprises a reverse leakage current detection circuit and a forward conduction voltage drop detection circuit:
the reverse leakage current detection circuit comprises a constant current source generator, a current limiting protection resistor R1, a current sampler A1, a voltage sampler V1 and a tested device power diode D1, wherein one end of the constant current source generator is connected with one end of the current limiting protection resistor R1, the other end of the current limiting protection resistor R1 is connected with the positive electrode of the tested device power diode D1, the negative electrode of the tested device power diode D1 is connected with the other end of the current limiting protection resistor R1, the current sampler A1 is arranged between the current limiting protection resistor R1 and the tested device power diode D1, one end of the voltage sampler V1 is arranged between the current sampler and the tested device power diode D1, and the other end of the voltage sampler V1 is arranged between the constant current source generator and the tested device power diode D1;
the forward conduction voltage drop detection circuit comprises a constant voltage source generator, a current limiting protection resistor R2, a current sampler A2, a voltage sampler V2 and a device power diode D2 to be detected, wherein one end of the constant voltage source generator is connected with one end of the current limiting protection resistor R2, the other end of the current limiting protection resistor R2 is connected with the positive electrode of the device power diode D2 to be detected, the negative electrode of the device power diode D2 to be detected is connected with the other end of the current limiting protection resistor R2, the current sampler A2 is arranged between the current limiting protection resistor R2 and the device power diode D2 to be detected, one end of the voltage sampler V2 is arranged between the current sampler and the device power diode D2 to be detected, and the other end of the voltage sampler V2 is arranged between the constant voltage source generator and the device power diode D2 to be detected.
3. The microsecond-level pulsed forward surge current testing system of claim 1 wherein said power supply unit comprises:
the rectifier bridge stack is used for converting alternating current commercial power into direct current voltage;
the voltage regulating switch tube is used for transmitting direct-current voltage to the energy storage capacitor stack;
the energy storage capacitor stack is used for acquiring and storing direct-current voltage;
the sampler is used for obtaining the terminal voltage of the energy storage capacitor stack to divide the voltage and then generating sampling voltage;
the DA converter is used for converting the sampling voltage, comparing the sampling voltage with the set voltage and uploading a comparison result; and
and the PWM pulse width modulator is used for acquiring the comparison result and generating a pulse modulation signal to drive the voltage regulating switch tube so as to form closed-loop control.
4. The microsecond-level pulsed forward surge current testing system of claim 1 wherein said pulse unit comprises:
the pulse switch is used for conveying the voltage of the energy storage capacitor stack to the components to be tested;
the current probe is used for outputting a current signal of the pulse switch in real time; and
and the IGBT driver is used for acquiring the pulse signal of the control unit, amplifying the pulse signal and then performing switching action.
5. The microsecond pulsed forward surge current testing system of claim 1 further comprising a touch screen coupled to the control unit.
6. The microsecond pulsed forward surge current testing system of claim 2 wherein the power supply unit further comprises an electrical isolation switch disposed between the storage capacitor stack and the sampler, the electrical isolation switch configured to physically isolate the test loop from the mains loop.
7. The microsecond-level pulse forward surge current testing system according to claim 2, wherein the energy storage capacitor stack is composed of two capacitors C1 and C2 which are connected in parallel, the capacitor C1 is a thin film capacitor, and the capacitor C2 is an aluminum electrolytic capacitor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202310569779.8A CN116466208B (en) | 2023-05-19 | 2023-05-19 | Microsecond-level pulse forward surge current testing system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202310569779.8A CN116466208B (en) | 2023-05-19 | 2023-05-19 | Microsecond-level pulse forward surge current testing system |
Publications (2)
Publication Number | Publication Date |
---|---|
CN116466208A true CN116466208A (en) | 2023-07-21 |
CN116466208B CN116466208B (en) | 2023-10-31 |
Family
ID=87182599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202310569779.8A Active CN116466208B (en) | 2023-05-19 | 2023-05-19 | Microsecond-level pulse forward surge current testing system |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN116466208B (en) |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101752845A (en) * | 2008-12-12 | 2010-06-23 | 深圳市鑫汇科科技有限公司 | Voltage and current surge protection method for electromagnetic oven and circuit thereof |
CN102914732A (en) * | 2012-10-24 | 2013-02-06 | 武汉神动汽车电子电器有限公司 | Surge impact test device |
CN102944824A (en) * | 2012-11-09 | 2013-02-27 | 绍兴旭昌科技企业有限公司 | Test method for testing rectifier diode transient high temperature reverse leakage current |
CN104297657A (en) * | 2014-10-22 | 2015-01-21 | 温州大学 | Digitized high-power microwave diode reversed dynamic waveform and loss power testing system |
CN106124956A (en) * | 2016-06-18 | 2016-11-16 | 温州大学 | A kind of digitized diode forward current surge assay device |
CN206892210U (en) * | 2017-04-28 | 2018-01-16 | 东莞市奥海科技股份有限公司 | Detection power supply adaptor and charger bear the device of surge current size |
US20210072292A1 (en) * | 2019-09-06 | 2021-03-11 | Chicony Power Technology Co., Ltd. | Inrush current test device |
CN115327332A (en) * | 2022-08-03 | 2022-11-11 | 青岛海宜丰电力电子有限公司 | Test system and test method of power semiconductor device |
CN217901940U (en) * | 2022-06-01 | 2022-11-25 | 派恩杰半导体(杭州)有限公司 | Be used for diode surge current test circuit and test equipment |
CN115663949A (en) * | 2022-10-22 | 2023-01-31 | 深圳市麦迪瑞科技有限公司 | Regulation and control circuit for outputting instant surge current |
-
2023
- 2023-05-19 CN CN202310569779.8A patent/CN116466208B/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101752845A (en) * | 2008-12-12 | 2010-06-23 | 深圳市鑫汇科科技有限公司 | Voltage and current surge protection method for electromagnetic oven and circuit thereof |
CN102914732A (en) * | 2012-10-24 | 2013-02-06 | 武汉神动汽车电子电器有限公司 | Surge impact test device |
CN102944824A (en) * | 2012-11-09 | 2013-02-27 | 绍兴旭昌科技企业有限公司 | Test method for testing rectifier diode transient high temperature reverse leakage current |
CN104297657A (en) * | 2014-10-22 | 2015-01-21 | 温州大学 | Digitized high-power microwave diode reversed dynamic waveform and loss power testing system |
CN106124956A (en) * | 2016-06-18 | 2016-11-16 | 温州大学 | A kind of digitized diode forward current surge assay device |
CN206892210U (en) * | 2017-04-28 | 2018-01-16 | 东莞市奥海科技股份有限公司 | Detection power supply adaptor and charger bear the device of surge current size |
US20210072292A1 (en) * | 2019-09-06 | 2021-03-11 | Chicony Power Technology Co., Ltd. | Inrush current test device |
CN217901940U (en) * | 2022-06-01 | 2022-11-25 | 派恩杰半导体(杭州)有限公司 | Be used for diode surge current test circuit and test equipment |
CN115327332A (en) * | 2022-08-03 | 2022-11-11 | 青岛海宜丰电力电子有限公司 | Test system and test method of power semiconductor device |
CN115663949A (en) * | 2022-10-22 | 2023-01-31 | 深圳市麦迪瑞科技有限公司 | Regulation and control circuit for outputting instant surge current |
Non-Patent Citations (1)
Title |
---|
汤滟;龚炳生;: "10A~2kA智能化浪涌电流测试仪", 电子工程师, vol. 33, no. 8, pages 14 - 16 * |
Also Published As
Publication number | Publication date |
---|---|
CN116466208B (en) | 2023-10-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102156253B (en) | Double-pulse test method for IGBT module | |
CN101022243A (en) | Gate drive circuit | |
CN106385009A (en) | Shaping protection circuit applied to IGBT | |
CN109660132A (en) | A kind of device of inhibition bis- times of working frequency ripple waves of PFC of voltage-type COT control | |
Alvarez et al. | Sinusoidal current operation of delay-time compensation for parallel-connected IGBTs | |
CN211785699U (en) | Surge pulse generating circuit | |
CN113917303A (en) | Dynamic characteristic test circuit, test platform and test method for high-voltage device | |
CN110133472B (en) | Non-contact type working parameter measuring method of IGBT chip | |
CN102097789A (en) | Over-current or short-circuit state detection circuit of insulated gate bipolar transistor (IGBT) | |
CN102064681B (en) | Switch power supply output overvoltage protection circuit | |
CN116466208B (en) | Microsecond-level pulse forward surge current testing system | |
CN207586362U (en) | A kind of test platform | |
CN210005632U (en) | IGBT double-pulse test circuit | |
CN109752638B (en) | Device and method for continuously measuring output curve of IGBT (insulated Gate Bipolar transistor) chip | |
Anurag et al. | Effect of optocoupler gate drivers on SiC MOSFET | |
CN113315388B (en) | High-power-density long-life high-frequency pulse alternating-current power supply | |
CN105529679B (en) | IGBT protection of pipe method, protection circuit and the power module using the protection circuit | |
CN211826318U (en) | Electrolytic capacitor high voltage pulse resistance test circuit | |
CN114062758A (en) | Electric signal detection method, circuit and switching power supply | |
CN220382935U (en) | Multi-parameter adjustable IGBT driving isolation circuit | |
CN101982936A (en) | Controller and clamp circuit thereof | |
CN212646838U (en) | Detection apparatus for electric locomotive power module | |
CN212255563U (en) | Parallel module dipulse current-sharing test system | |
CN218727774U (en) | Reliability test circuit suitable for power device | |
CN211348401U (en) | Discharge voltage test equipment |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240119 Address after: 214000, 7th floor, Building A, Inspection and Testing Park, No. 37 Tuanjie Middle Road, Xishan District, Wuxi City, Jiangsu Province Patentee after: Wuxi Nengxin Testing Technology Co.,Ltd. Address before: Room 708, Building 1, No. 688, Zhenze Road, the Taihu Lake Street, Binhu District, Wuxi City, Jiangsu Province, 214000 Patentee before: Qingwan Technology (Wuxi) Co.,Ltd. |