CN218727774U - Reliability test circuit suitable for power device - Google Patents
Reliability test circuit suitable for power device Download PDFInfo
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- CN218727774U CN218727774U CN202222519041.4U CN202222519041U CN218727774U CN 218727774 U CN218727774 U CN 218727774U CN 202222519041 U CN202222519041 U CN 202222519041U CN 218727774 U CN218727774 U CN 218727774U
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Abstract
The utility model discloses a reliability test circuit suitable for power device, include: the circuit comprises a sampling circuit, a control circuit, a level conversion circuit and a driving circuit; the sampling circuit is used for being connected with a grid electrode of the power device and collecting grid electrode current of the power device; the input end of the control circuit is connected with the sampling circuit, and a PWM signal is generated or not generated according to the grid current output by the sampling circuit; the input end of the level conversion circuit and the output end of the control circuit carry out level conversion on the PWM signal output by the control circuit; the input end of the driving circuit is connected with the output end of the level conversion circuit, and the output end of the driving circuit is used for being connected with the grid electrode of the power device to control the on/off of the power device. The utility model discloses utilize PWM technique to carry out on-off control to the gate pole-projecting pole/source electrode of being surveyed power device, under high temperature, carry out HTGB reliability examination to power device.
Description
Technical Field
The utility model belongs to the power semiconductor field, concretely relates to reliability test circuit suitable for power device.
Background
The voltage driving device of the IGBT/MOSFET power device is widely applied to power supplies and medium and high power converters, and the switching characteristic of the device determines the switching loss and the electrical stress of the device. In the prior art, when reliability evaluation is performed between a grid electrode and a source electrode of an IGBT/MOSFET power device, a high-temperature grid electrode reverse bias test is usually adopted, the IGBT/MOSFET power device is placed in a high-temperature box, a voltage of +20V or a voltage of-20V is applied between a grid electrode and an emitting electrode/source electrode of the IGBT/MOSFET power device, the test duration is 168h or 1000h, and grid electrode leakage conditions of the IGBT/MOSFET power device are tested before and after the test. In practical application of the IGBT/MOSFET power device, the driving voltage of a gate electrode-an emitter electrode/a source electrode of the IGBT/MOSFET power device is a PWM waveform of +/-15V, in application, although the IGBT/MOSFET power device can be simply checked in the checking mode, the gate electrode-emitter electrode voltage is greatly different from the gate electrode-emitter electrode voltage of +/-20V according to international standard (IEC 60747-9) for checking the power device, and the problems caused by the gate electrode structure and a chip process of the power device cannot be well evaluated.
SUMMERY OF THE UTILITY MODEL
To the above problem, the utility model provides a reliability test circuit suitable for power device utilizes PWM technique to carry out on-off control to the gate pole-projecting pole/source electrode of being surveyed power device, under the high temperature, carries out HTGB reliability examination to power device.
In order to realize the technical purpose, reach above-mentioned technological effect, the utility model discloses a following technical scheme realizes:
in a first aspect, the utility model provides a reliability circuit suitable for power device, include: the circuit comprises a sampling circuit, a control circuit, a level conversion circuit and a driving circuit;
the sampling circuit is used for being connected with a grid electrode of the power device and collecting grid electrode current of the power device;
the input end of the control circuit is connected with the sampling circuit, and a PWM signal is generated or not generated according to the grid current output by the sampling circuit;
the input end of the level conversion circuit and the output end of the control circuit carry out level conversion on the PWM signal output by the control circuit;
the input end of the driving circuit is connected with the output end of the level conversion circuit, and the output end of the driving circuit is used for being connected with the grid electrode of the power device to control the on/off of the power device.
Optionally, the control circuit includes an ADC converter, a DSP control chip, and a PWM output circuit, which are connected in sequence.
Optionally, when the gate current output by the sampling circuit is greater than a preset value, the DSP control chip controls the PWM output circuit not to generate a PWM signal.
Optionally, when the gate current output by the sampling circuit is less than or equal to a preset value, the DSP control chip controls the PWM output circuit to generate a PWM signal.
Optionally, the drive circuit outputs a +20V or-20V voltage signal.
In a second aspect, the present invention provides a reliability testing method for power device, including:
collecting grid current of a power device by using a sampling circuit;
generating or not generating a PWM signal according to the grid current output by the sampling circuit by using a control circuit;
level conversion is carried out on the PWM signal output by the control circuit by utilizing a level conversion circuit;
the driving circuit is used for controlling the on/off of the power device based on the output signal of the level conversion circuit.
Optionally, the control circuit includes an ADC converter, a DSP control chip, and a PWM output circuit, which are connected in sequence.
Optionally, when the gate current output by the sampling circuit is greater than a preset value, the DSP control chip controls the PWM output circuit not to generate a PWM signal.
Optionally, when the gate current output by the sampling circuit is less than or equal to a preset value, the DSP control chip controls the PWM output circuit to generate a PWM signal.
Optionally, the drive circuit outputs a +20V or-20V voltage signal.
Compared with the prior art, the beneficial effects of the utility model are that:
the utility model discloses at first sampling to the positive voltage/negative-going grid current of being surveyed power device, sending into control circuit after the sampling and producing the PMW signal, carrying out level conversion through level shift circuit again, finally entering into drive circuit to control is surveyed power device's switch. The utility model discloses the reliability test circuit that provides in can carry out the reliability test that the high temperature is reversed partially to the power device of different voltage, different encapsulation.
Drawings
In order that the present invention may be more readily and clearly understood, the following detailed description of the present invention is provided in connection with the accompanying drawings, in which:
fig. 1 is a schematic diagram of a reliability testing circuit structure suitable for a power device according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and are not intended to limit the scope of the invention.
The following description is made in detail for the purpose of illustrating the principles of the present invention and in conjunction with the accompanying drawings.
Example 1
The embodiment of the utility model provides an embodiment provides a reliability circuit suitable for power device, as shown in fig. 1, include: the circuit comprises a sampling circuit, a control circuit, a level conversion circuit and a driving circuit;
the sampling circuit is used for being connected with a grid electrode of the power device and collecting grid electrode current of the power device; in a specific implementation process, a current sensor is arranged between the sampling circuit and a grid electrode of the power device; the power device is an IGBT or MOSFET device;
the input end of the control circuit is connected with the sampling circuit, and a PWM signal is generated or not generated according to the grid current output by the sampling circuit;
the input end of the level conversion circuit and the output end of the control circuit carry out level conversion on the PWM signal output by the control circuit;
the input end of the driving circuit is connected with the output end of the level conversion circuit, and the output end of the driving circuit is used for being connected with the grid electrode of the power device to control the on/off of the power device.
The embodiment of the utility model provides an in at first sample the positive voltage/negative current of being surveyed power device, send into control circuit after the sampling and produce the PMW signal, carry out level conversion through level conversion circuit again, finally enter into drive circuit to control is surveyed power device's switch. It can be seen that the embodiment of the utility model provides an in the reliability measurement circuit, through the control by the actual operating voltage's of positive/negative voltage simulation PWM voltage examination of power device to accomplish the HTGB high temperature test under the PWM waveform control under the high temperature, through this kind of circuit design, make by the purpose that the power device reaches real dynamic reliability examination.
In a specific implementation manner of the embodiment of the present invention, as shown in fig. 1, the control circuit includes an ADC converter, a DSP control chip, and a PWM output circuit, which are connected in sequence; the ADC converter can be an F28335 type chip;
when the grid current output by the sampling circuit is larger than a preset value, the DSP control chip controls the PWM output circuit not to generate PWM signals;
when the grid current output by the sampling circuit is smaller than or equal to a preset value, the DSP control chip controls the PWM output circuit to generate PWM signals.
In a specific implementation of the embodiments of the present invention, the driving circuit outputs a +20V or-20V voltage signal. In the utility model discloses in other embodiment, the drive circuit output can also be the voltage signal of other amplitudes, can design according to actual need.
Example 2
The embodiment of the utility model provides an in provide a reliability testing method suitable for power device, including following step:
(1) Collecting grid current of a power device by using a sampling circuit;
(2) Generating or not generating a PWM signal according to the grid current output by the sampling circuit by using a control circuit;
(3) Level conversion is carried out on the PWM signal output by the control circuit by utilizing a level conversion circuit;
(4) And controlling the on/off of the power device by using the driving circuit based on the output signal of the level conversion circuit.
The embodiment of the utility model provides an in at first sample the positive voltage/negative current of being surveyed power device, send into control circuit after the sampling and produce the PMW signal, carry out level conversion through level conversion circuit again, finally enter into drive circuit to control is surveyed power device's switch. It can be seen that the embodiment of the utility model provides a test circuit, through the control by the actual operating voltage's of positive/negative voltage simulation PWM voltage examination of power device under test HTGB high temperature test under the control of PWM waveform is accomplished to high temperature, through this kind of circuit design, makes by the purpose that power device under test reaches real dynamic reliability examination.
In a specific implementation manner of the embodiment of the present invention, as shown in fig. 1, the control circuit includes an ADC converter, a DSP control chip and a PWM output circuit that are connected in sequence.
When the grid current output by the sampling circuit is larger than a preset value, the DSP control chip controls the PWM output circuit not to generate PWM signals.
When the grid current output by the sampling circuit is smaller than or equal to a preset value, the DSP control chip controls the PWM output circuit to generate PWM signals.
In a specific implementation of the embodiments of the present invention, the driving circuit outputs a +20V or-20V voltage signal. In other embodiments of the present invention, the output of the driving circuit may also be a voltage signal with other amplitudes. Can be designed according to actual requirements.
The method in this embodiment can be implemented based on the reliability circuit applicable to the power device in embodiment 1.
To sum up, the utility model discloses following advantage specifically:
based on the utility model discloses, can set up a plurality of the same reliability test circuit that is applicable to power device, a plurality of IGBT of simultaneous control, MOSFET device to can carry out the HTGB test to power device on a plurality of ageing boards, also can carry out the HTGB test to a plurality of power device of same ageing board simultaneously.
Based on the utility model discloses, can carry out the HTGB test of PWM control to power device under the temperature of difference.
Based on the utility model discloses, can regulate and control the voltage that is applyed by the power device under test according to actual need, improve application scope.
Based on the utility model discloses, can be according to the sampling current size of sampling circuit output, control the power device on single circuit and open and turn-off, can prevent effectively that the power device from leading to inefficacy because of the grid electric leakage is too big, have quick protect function.
Based on the utility model discloses, can realize the switching speed of control power device through changing the drive condition, and then observe and analyze the influence of voltage to the power device electric leakage.
The basic principles and the main features of the invention and the advantages of the invention have been shown and described above. It should be understood by those skilled in the art that the present invention is not limited to the above embodiments, and the above embodiments and descriptions are only illustrative of the principles of the present invention, and that various changes and modifications may be made without departing from the spirit and scope of the present invention, and all such changes and modifications fall within the scope of the present invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (6)
1. A reliability testing circuit for a power device, comprising: the circuit comprises a sampling circuit, a control circuit, a level conversion circuit and a driving circuit;
the sampling circuit is used for being connected with a grid electrode of the power device and collecting grid electrode current of the power device;
the input end of the control circuit is connected with the sampling circuit, and a PWM signal is generated or not generated according to the grid current output by the sampling circuit;
the input end of the level conversion circuit and the output end of the control circuit carry out level conversion on the PWM signal output by the control circuit;
the input end of the driving circuit is connected with the output end of the level conversion circuit, and the output end of the driving circuit is used for being connected with the grid electrode of the power device to control the on/off of the power device.
2. The reliability test circuit for power devices of claim 1, wherein: the control circuit comprises an ADC (analog to digital converter), a DSP (digital signal processor) control chip and a PWM (pulse width modulation) output circuit which are sequentially connected.
3. A reliability test circuit for a power device according to claim 2, wherein: and when the grid current output by the sampling circuit is greater than a preset value, the DSP control chip controls the PWM output circuit not to generate PWM signals.
4. A reliability test circuit for a power device according to claim 2, wherein: when the grid current output by the sampling circuit is smaller than or equal to a preset value, the DSP control chip controls the PWM output circuit to generate a PWM signal.
5. The reliability test circuit for power devices of claim 1, wherein: the driving circuit outputs a +20V or-20V voltage signal.
6. The reliability test circuit for power devices of claim 1, wherein: the power device is an IGBT or MOSFET device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222519041.4U CN218727774U (en) | 2022-09-23 | 2022-09-23 | Reliability test circuit suitable for power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222519041.4U CN218727774U (en) | 2022-09-23 | 2022-09-23 | Reliability test circuit suitable for power device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218727774U true CN218727774U (en) | 2023-03-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222519041.4U Active CN218727774U (en) | 2022-09-23 | 2022-09-23 | Reliability test circuit suitable for power device |
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| Country | Link |
|---|---|
| CN (1) | CN218727774U (en) |
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- 2022-09-23 CN CN202222519041.4U patent/CN218727774U/en active Active
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