CN217901940U - Be used for diode surge current test circuit and test equipment - Google Patents
Be used for diode surge current test circuit and test equipment Download PDFInfo
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- CN217901940U CN217901940U CN202221396282.8U CN202221396282U CN217901940U CN 217901940 U CN217901940 U CN 217901940U CN 202221396282 U CN202221396282 U CN 202221396282U CN 217901940 U CN217901940 U CN 217901940U
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Abstract
The utility model relates to a diode test technology, and discloses a surge current test circuit and test equipment for a diode, which comprises a waveform generation module and a test diode, and also comprises at least one group of current control modules, wherein the current control modules are mutually connected in parallel to form a current control module group; the current control module group is used for adjusting and controlling the current signal and transmitting the adjusted current signal to the waveform generation module, and the waveform generation module loads the required pulse current to the tested diode; the utility model utilizes the linear characteristics of the operational amplifier and the NMOS amplification area to build a current control unit circuit module; sinusoidal current pulse waveforms with adjustable frequency cycles can be generated, and the size of the device can be greatly reduced by utilizing super-capacitor energy storage; the test requirements of different current grades can be met by connecting the current control unit module circuits in parallel; the body diode of the SiC MOSFET can be tested, and the SiC diode can also be tested.
Description
Technical Field
The utility model relates to a diode test technique has especially related to one kind and has been used for diode surge current test circuit and test equipment.
Background
The forward surge current test of the SiC diode aims at verifying the current surge resistance of the SiC diode chip, and a forward sine high current pulse is generated by equipment, and the current is added to the diode to observe whether the diode is damaged or not.
At present, two methods for testing the forward surge current of a diode are commonly used, firstly, a transformer is adopted to obtain sinusoidal pulse current from commercial power, and the current is added to the diode for testing; and secondly, LC resonance is adopted, and sinusoidal pulse current is generated by using the resonance.
Testing equipment such as prior art CN201811287649.0 for diodes tends to be large in both volume and weight and cannot adjust the period and amplitude of the sinusoidal pulse current.
Disclosure of Invention
The utility model discloses test equipment to prior art diode is often volume and weight all great to can not adjust the cycle of sinusoidal pulse current and the problem of amplitude, provide one kind and be used for diode surge current test circuit and test equipment.
In order to solve the technical problem, the utility model discloses a following technical scheme can solve:
a surge current test circuit for a diode comprises a waveform generation module, a test diode and at least one group of current control modules, wherein the current control modules are connected in parallel to form a current control module group; the current control module group adjusts and controls the current signals and transmits the adjusted current signals to the waveform generation module, and the waveform generation module loads the required pulse current to the tested diode.
Through the designed diode surge current testing circuit, the sine pulse modules with adjustable period and amplitude are generated through the waveform generating module, and meanwhile, through setting different numbers of current control modules, the capability range of testing current is expanded.
Preferably, the current control module comprises an amplifying circuit, a voltage stabilizing circuit and a switch control circuit; the amplifying circuit is an amplifier U1; the waveform generation module is connected with the input end of the amplifier U1;
the voltage stabilizing circuit comprises a capacitor C1, a capacitor C2 and a resistor R3; the capacitor C1 is connected in parallel with the resistor R3,
the output end of the amplifier U1 is connected with a capacitor C2 and a resistor R3;
the switch control circuit is a field effect transistor Q1; the G level of the field effect tube Q1 is connected with a voltage stabilizing circuit; the S stage of the field effect transistor Q1 is grounded through a resistor R5; the D stage of the field effect transistor Q1 is connected to the test diode.
Preferably, the test diode comprises a SiCSMOSFET body diode or a stand-alone SiC diode.
Preferably, the test device further comprises a super capacitor and a direct current power supply, wherein the direct current power supply is connected with the super capacitor in parallel, one end of the direct current power supply is grounded after the direct current power supply is connected with the super capacitor in parallel, and the other end of the direct current power supply is connected with the test diode.
In order to solve the technical problem, the utility model also provides a be used for diode surge current test equipment, it includes diode surge current test circuit.
The utility model discloses owing to adopted above technical scheme, have apparent technological effect:
the utility model builds a current control unit circuit module by utilizing the linear characteristics of the operational amplifier and the NMOS amplification area;
the utility model can generate sine current pulse waveform with adjustable frequency cycle;
the utility model can greatly reduce the size of the device by using the super capacitor for energy storage;
the utility model can meet the test requirements of different current grades through the parallel current control module;
the utility model discloses both can test SiC MOSFET body diode and can test the SiC diode.
Drawings
Fig. 1 is a system diagram of the present invention.
Fig. 2 is a system diagram of embodiment 1 of the present invention.
Fig. 3 is a system diagram of embodiment 2 of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Example 1
A surge current test circuit for a diode comprises a waveform generation module, a test diode and a current control module, wherein the current control module is used for adjusting and controlling a current signal and transmitting the adjusted current signal to the waveform generation module, and the waveform generation module loads required pulse current to the tested diode.
Through the designed diode surge current testing circuit, the sine pulse module with adjustable period and amplitude is generated through the waveform generating module, and the capability range of testing current can be expanded through the current control module.
The current control module comprises an amplifying circuit, a voltage stabilizing circuit and a switch control circuit; the amplifying circuit is an amplifier U1; the waveform generation module is connected with the input end of the amplifier U1;
the voltage stabilizing circuit comprises a capacitor C1, a capacitor C2 and a resistor R3; the capacitor C1 is connected in parallel with the resistor R3,
the output end of the amplifier U1 is connected with a capacitor C2 and a resistor R3;
the switch control circuit is a field effect transistor Q1; the G level of the field effect tube Q1 is connected with a voltage stabilizing circuit; the S stage of the field effect transistor Q1 is grounded through a resistor R5; the D stage of the field effect transistor Q1 is connected to the test diode.
The test device also comprises a super capacitor and a direct current power supply, wherein the direct current power supply is connected with the super capacitor in parallel, one end of the direct current power supply is grounded after the direct current power supply is connected with the super capacitor in parallel, and the other end of the direct current power supply is connected with the test diode.
The test diodes were individual SiC diodes.
Example 2
On the basis of embodiment 1, the test diode of this embodiment is a SiCMOSFET body diode.
The waveform generation module is used for generating sinusoidal voltage pulses with a single period; a current control module, which calculates the required pulse current I _ d = - (R4V _ in)/(R2R 5) according to the virtual short break;
when Vin is a sine pulse wave, id is necessarily a sine pulse wave, and C1, C2, and R2 are used to adjust the phase and amplitude to make the circuit operate in a stable state. The super capacitor provides surge current energy and prevents interference with a power supply network; and the direct current power supply provides surge current capability and charges the super capacitor.
Example 3
On the basis of the above embodiment, the current control modules of the embodiment are provided with 2 sets, and the two sets of current control modules are connected in parallel with each other. Due to the limited current capacity of a single current control module, different numbers of current control unit circuit modules can be connected in parallel, and W1, W2, W3 and W4 of the current control modules are connected together in FIG. 3; the forward surge current capability range of the test diode is expanded by connecting different numbers of current control modules in parallel.
Example 4
On the basis of the above embodiments, the present embodiment is a device for testing a diode inrush current. The designed test equipment is small in size, and can test both the SiC MOSFET body diode and the SiC diode.
Claims (5)
1. A surge current test circuit for a diode comprises a waveform generation module and a test diode, and is characterized by further comprising at least one group of current control modules, wherein the current control modules are connected in parallel to form a current control module group; the current control module group adjusts and controls the current signals and transmits the adjusted current signals to the waveform generation module, and the waveform generation module loads the required pulse current to the tested diode.
2. The circuit for testing the surge current of the diode of claim 1, wherein the current control module comprises an amplifying circuit, a voltage stabilizing circuit and a switch control circuit; the amplifying circuit is an amplifier U1; the waveform generation module is connected with the input end of the amplifier U1;
the voltage stabilizing circuit comprises a capacitor C1, a capacitor C2 and a resistor R3; the capacitor C1 is connected in parallel with the resistor R3,
the output end of the amplifier U1 is connected with a capacitor C2 and a resistor R3;
the switch control circuit is a field effect transistor Q1; the G stage of the field effect tube Q1 is connected with a voltage stabilizing circuit; the S stage of the field effect transistor Q1 is grounded through a resistor R5; the D stage of the field effect transistor Q1 is connected to the test diode.
3. The circuit of claim 1, wherein the test diode comprises a SicMOSFET body diode or a single SiC diode.
4. The circuit of claim 1, further comprising a super capacitor and a dc power supply, wherein the dc power supply is connected in parallel with the super capacitor, and after parallel connection, one end of the dc power supply is grounded, and the other end of the dc power supply is connected to the test diode.
5. A device for testing a diode surge current, characterized by comprising a diode surge current testing circuit according to any one of claims 1 to 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221396282.8U CN217901940U (en) | 2022-06-01 | 2022-06-01 | Be used for diode surge current test circuit and test equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221396282.8U CN217901940U (en) | 2022-06-01 | 2022-06-01 | Be used for diode surge current test circuit and test equipment |
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| Publication Number | Publication Date |
|---|---|
| CN217901940U true CN217901940U (en) | 2022-11-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202221396282.8U Active CN217901940U (en) | 2022-06-01 | 2022-06-01 | Be used for diode surge current test circuit and test equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116466208A (en) * | 2023-05-19 | 2023-07-21 | 擎湾科技(无锡)有限公司 | Microsecond-level pulse forward surge current testing system |
-
2022
- 2022-06-01 CN CN202221396282.8U patent/CN217901940U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116466208A (en) * | 2023-05-19 | 2023-07-21 | 擎湾科技(无锡)有限公司 | Microsecond-level pulse forward surge current testing system |
| CN116466208B (en) * | 2023-05-19 | 2023-10-31 | 擎湾科技(无锡)有限公司 | Microsecond-level pulse forward surge current testing system |
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