CN116417505A - 一种阳极短路沟槽rc-igbt器件及制备方法 - Google Patents
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Abstract
本发明公开了一种阳极短路沟槽RC‑IGBT器件，其技术方案漂移区N‑drift，漂移区N‑drift设置在RC‑IGBT器件的背面；P+掺杂区域，所述P+掺杂区域设置在RC‑IGBT器件的背面；沟槽若干，所述沟槽开设在RC‑IGBT器件的背面，若干所述沟槽相互平行布置，所述沟槽穿过P+掺杂区域，将P+掺杂区域分隔成若干段；N+掺杂区域，所述N+掺杂区域设置在沟槽的尾端，N+掺杂区域将相邻的两个P+掺杂区域连接；电极collector，在RC‑IGBT器件的背面的边缘淀积金属形成电极collector，电极collector位于P+掺杂区域外侧，本发明的优点在于器件背面沟槽底部注入杂质形成N+掺杂区域，且沟槽穿过P+掺杂区域，淀积金属后两个掺杂区域通过金属短接构成RC‑IGBT结构，起到反向导通作用，同时提高IGBT注入效率，降低IGBT导通压降。
Description
技术领域
本发明涉及半导体制造领域，尤其涉及一种阳极短路沟槽RC-IGBT器件及制备方法。
背景技术
IGBT绝缘栅双极型晶体管，IGBT因为自身器件结构原因不能反向导通，通常在实际应用中需要反向并联一个二极管，解决不能反向导通的问题。RC-IGBT在结构上相当于集成了IGBT和二极管，可以实现反向导通。
目前有申请号为CN104485355A的名称为一种RC-IGBT器件，其衬底中具有P阱，P阱中具有栅极沟槽，沟槽内壁及底部覆盖一层栅氧化层；沟槽内填充满多晶硅形成多晶硅栅极；所述P阱中还具有重掺杂P型区，重掺杂P型区上方与多晶硅栅极之间为重掺杂N型区；金属连线穿通介质层与重掺杂P型区连接；所述多晶硅栅极上方还具有多个呈等距或者不等距间隔设计的第二多晶硅，排列于P阱上方的衬底表面，将多晶硅栅极形成跨接。
传统RC-IGBT在导通初始阶段，首先处于MOS工作模式，该阶段漂移区N-drift电阻大，表现为IGBT导通初期压降较大；背面PN结导通后，进入IGBT工作模式，电导调制会大幅降低漂移区电阻率，所以会出现电压Snap-back(回跳)现象，即器件的电阻由大向小的快速跳变，该现象不利于RC-IGBT在功率模块中的并联应用。
发明内容
针对上述现有技术的缺点，本发明的目的是提供一种阳极短路沟槽RC-IGBT器件及制备方法，其优点在于沟槽穿过P+掺杂区域，淀积金属后两个掺杂区域通过金属短接起到等同RC-IGBT的作用，通过控制该N+掺杂区域占比抑制RC-IGBT的snapback现象，同时该结构提高了背面P+区域空穴注入效率，有效降低IGBT导通压降和导通损耗。
本发明的上述技术目的是通过以下技术方案得以实现的：
一种阳极短路沟槽RC-IGBT器件，包括：
漂移区N-drift，漂移区N-drift设置在RC-IGBT器件的背面；
P+掺杂区域，所述P+掺杂区域设置在RC-IGBT器件的背面；
沟槽若干，所述沟槽开设在RC-IGBT器件的背面，若干所述沟槽相互平行布置，所述沟槽穿过P+掺杂区域，将P+掺杂区域分隔成若干段；
N+掺杂区域，所述N+掺杂区域设置在沟槽的尾端，N+掺杂区域将相邻的两个P+掺杂区域连接；
电极collector，在RC-IGBT器件的背面的边缘淀积金属形成电极collector，电极collector位于P+掺杂区域外侧。
进一步的，所述P+掺杂区域上设置有氧化层，氧化层上进行刻蚀形成沟槽。
进一步的，所述N+掺杂区域的外形呈弧形。。
一种阳极短路沟槽RC-IGBT器件的制造方法，包括以下步骤：
步骤S1、RC-IGBT器件正面和背面基本结构的制造；
步骤S2、RC-IGBT器件背面做第一次离子注入工艺，注入的杂质经过退火工艺激活杂质并推阱形成P+掺杂区域；
步骤S3、RC-IGBT器件背面生长氧化层，通过光刻工艺及刻蚀工艺在氧化层上打开窗口，在窗口处继续刻蚀硅材料，形成呈间隔排布的沟槽，沟槽穿过P+掺杂区域；
步骤S4、RC-IGBT器件背面做第二次离子注入工艺，注入的杂质经过退火工艺激活杂质并推阱在沟槽末尾形成N+掺杂区域；
步骤S5、RC-IGBT器件背面边缘淀积金属，形成背面集电极collector。
进一步的，在步骤S2中，注入杂质为硼B。
进一步的，步骤S2中，退火工艺参数为：退火温度420℃±0.5min，退火时间30min±1min。
进一步的，在步骤S3中，氧化层为SiO2。
进一步的，在步骤S4中，注入杂质为磷P。
进一步的，在步骤S4中，退火工艺激活参数为：采用Laser Anneal激光退火，以激光束方式照射RC-IGBT器件的晶圆背面，使局部温度超过1100℃。
综上所述，本发明具有以下有益效果：
1.通过在RC-IGBT器件的背面制作沟槽，并在沟槽底部注入杂质形成N+掺杂区域，沟槽穿过P+掺杂区域，淀积金属后两个掺杂区域通过金属短接起到等同RC-IGBT的作用，通过控制该N+掺杂区域占比抑制RC-IGBT的snapback现象，同时该结构提高了背面P+区域空穴注入效率，有效降低IGBT导通压降和导通损耗。
2.N+掺杂区域可以起到电场阻挡层FS的效果，提高器件耐压性能。
附图说明
图1是RC-IGBT器件的结构示意图。
图2是RC-IGBT器件背面第一次注入杂质后的结构示意图。
图3是RC-IGBT器件背面刻蚀沟槽后的结构示意图。
图4是RC-IGBT器件背面第二次注入杂质后的结构示意图。
图5是RC-IGBT器件背面淀积金属过程后的结构示意图。
图6是RC-IGBT器件电路IV曲线图。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图和具体实施方式对本发明提出的方案作进一步详细说明。根据下面说明，本发明的优点和特征将更清楚。
实施例：
一种阳极短路沟槽RC-IGBT器件，如图5所示，包括漂移区N-drift、P+掺杂区域、沟槽、N+掺杂区域和电极collector。
漂移区N-drift，漂移区N-drift设置在RC-IGBT器件的背面。
P+掺杂区域，所述P+掺杂区域设置在RC-IGBT器件的背面。
沟槽若干，沟槽开设在RC-IGBT器件的背面，若干沟槽相互平行布置，沟槽穿过P+掺杂区域，将P+掺杂区域分隔成若干段。
N+掺杂区域，N+掺杂区域设置在沟槽的尾端，N+掺杂区域的外形呈弧形，N+掺杂区域将相邻的两个P+掺杂区域连接。N+掺杂区域可以起到电场阻挡层FS的效果，提高器件耐压性
电极collector，在RC-IGBT器件的背面的边缘淀积金属形成电极collector，电极collector位于P+掺杂区域外侧。电极collector将P+掺杂区域和N+掺杂区域短接，短接N+P+形成RC-IGBT结构，实现反向导通功能。
一种阳极短路沟槽RC-IGBT器件的制造方法，包括以下步骤：
步骤S1、RC-IGBT器件正面和背面基本结构的制造，如图1所示，RC-IGBT器件的背面制造出漂移区N-drift。
步骤S2、如图2所示，RC-IGBT器件背面做第一次离子注入工艺，注入的杂质为硼B，注入的杂质经过退火工艺激活杂质并推阱形成P+掺杂区域，退火工艺参数为：退火温度420℃±0.5min，退火时间30min±1min。
步骤S3、如图3所示，RC-IGBT器件背面生长氧化层，氧化层为SiO2，通过光刻工艺及刻蚀工艺在氧化层上打开窗口，在窗口处继续刻蚀漂移区N-drift的硅材料，形成呈间隔排布的沟槽，沟槽穿过P+掺杂区域。
步骤S4、如图4所示，RC-IGBT器件背面做第二次离子注入工艺，注入的杂质为磷P，注入的杂质经过退火工艺激活杂质并推阱在沟槽末尾形成N+掺杂区域，退火工艺激活参数为：采用Laser Anneal激光退火，以激光束方式照射RC-IGBT器件的晶圆背面，使局部温度超过1100℃。
步骤S5、如图5所示，RC-IGBT器件背面边缘淀积金属，形成背面集电极collector。
电路仿真模拟：
如图6所示，传统结构的IV曲线可以看到snapback，本发明结构的IV曲线有效消除了该现象，且器件完全导通后，导通压降更低，带到更低的导通损耗。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。
Claims (9)
1.一种阳极短路沟槽RC-IGBT器件，其特征在于，包括：
漂移区N-drift，漂移区N-drift设置在RC-IGBT器件的背面；
P+掺杂区域，所述P+掺杂区域设置在RC-IGBT器件的背面；
沟槽若干，所述沟槽开设在RC-IGBT器件的背面，若干所述沟槽相互平行布置，所述沟槽穿过P+掺杂区域，将P+掺杂区域分隔成若干段；
N+掺杂区域，所述N+掺杂区域设置在沟槽的尾端，N+掺杂区域将相邻的两个P+掺杂区域连接；
电极collector，在RC-IGBT器件的背面的边缘淀积金属形成电极collector，电极collector位于P+掺杂区域外侧。
2.根据权利要求1所述的一种阳极短路沟槽RC-IGBT器件，其特征在于：所述P+掺杂区域上设置有氧化层，氧化层上进行刻蚀形成沟槽。
3.根据权利要求2所述的一种阳极短路沟槽RC-IGBT器件，其特征在于：所述N+掺杂区域的外形呈弧形。
4.根据权利要求1～3任一项所述的一种阳极短路沟槽RC-IGBT器件的制造方法，其特征在于，包括以下步骤：
步骤S1、RC-IGBT器件正面和背面基本结构的制造；
步骤S2、RC-IGBT器件背面做第一次离子注入工艺，注入的杂质经过退火工艺激活杂质并推阱形成P+掺杂区域；
步骤S3、RC-IGBT器件背面生长氧化层，通过光刻工艺及刻蚀工艺在氧化层上打开窗口，在窗口处继续刻蚀硅材料，形成呈间隔排布的沟槽，沟槽穿过P+掺杂区域；
步骤S4、RC-IGBT器件背面做第二次离子注入工艺，注入的杂质经过退火工艺激活杂质并推阱在沟槽末尾形成N+掺杂区域；
步骤S5、RC-IGBT器件背面边缘淀积金属，形成背面集电极collector。
5.根据权利要求4所述的一种阳极短路沟槽RC-IGBT器件的制造方法，其特征在于：在步骤S2中，注入杂质为硼B。
6.根据权利要求4所述的一种阳极短路沟槽RC-IGBT器件的制造方法，其特征在于：在步骤S2中，退火工艺参数为：退火温度420℃±0.5min，退火时间30min±1min。
7.根据权利要求4所述的一种阳极短路沟槽RC-IGBT器件的制造方法，其特征在于：在步骤S3中，氧化层为SiO2。
8.根据权利要求7所述的一种阳极短路沟槽RC-IGBT器件的制造方法，其特征在于：在步骤S4中，注入杂质为磷P。
9.根据权利要求8所述的一种阳极短路沟槽RC-IGBT器件的制造方法，其特征在于：在步骤S4中，退火工艺激活参数为：采用Laser Anneal激光退火，以激光束方式照射RC-IGBT器件的晶圆背面，使局部温度超过1100℃。
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