CN116404085A - LED chip - Google Patents
LED chip Download PDFInfo
- Publication number
- CN116404085A CN116404085A CN202310579709.0A CN202310579709A CN116404085A CN 116404085 A CN116404085 A CN 116404085A CN 202310579709 A CN202310579709 A CN 202310579709A CN 116404085 A CN116404085 A CN 116404085A
- Authority
- CN
- China
- Prior art keywords
- electrode structure
- led chip
- electrode
- current spreading
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims description 80
- 239000004065 semiconductor Substances 0.000 claims description 32
- 239000011241 protective layer Substances 0.000 claims description 5
- 238000002844 melting Methods 0.000 abstract description 14
- 230000008018 melting Effects 0.000 abstract description 14
- 230000015556 catabolic process Effects 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 9
- 229910002601 GaN Inorganic materials 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention provides an LED chip, which comprises a substrate, an epitaxial layer formed on the surface of the substrate, and a first electrode structure and a second electrode structure, wherein the extending dimension of the electrode structure in the first direction is smaller than the extending dimension of the electrode structure in the second direction perpendicular to the first direction, namely, the first electrode structure and the second electrode structure are formed into long strip-shaped structures extending along the second direction and are arranged in parallel in the first direction. The strip-shaped electrode structures enable the conduction paths of the current between the first electrode structure and the second electrode structure to be parallel and equidistant, so that the shortest path of the current conducted between the circular electrode structures in the prior art is avoided, and the problem of melting breakdown caused by the current crowding effect is solved; in addition, the strip-shaped electrode structure can enable current to be spread more uniformly, and therefore luminous efficiency of the chip is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an LED chip.
Background
With the rapid development of the LED display technology, mini LEDs and even Micro LEDs with excellent display effects have become industrial research hotspots. However, during the production, transportation and processing of Mini LEDs or Micro LEDs, electrostatic discharge (ESD) is easy to occur, that is, electrostatic charge discharges between two electrodes of an LED chip, which causes local burning of the LED chip, thereby causing phenomena of leakage and short circuit. On one hand, due to the small size of the Mini LED or the Micro LED, the instantaneous high current is limited in a small area, and the local burning and melting are caused by the too high current density; on the other hand, since the current LED chip electrode design is mainly circular, current is concentrated at the edge of the P electrode (near the N electrode side) during discharge, and a current crowding effect is generated, so that a melting breakdown phenomenon easily occurs in the region.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, the present invention proposes an LED chip, which includes a substrate, an epitaxial layer formed on a surface of the substrate, and a first electrode structure and a second electrode structure, wherein the first electrode structure and the second electrode structure are both elongated structures extending along a second direction, and are arranged in parallel in a first direction perpendicular to the second direction. The long strip-shaped electrode structures enable the conduction paths of the current between the first electrode structure and the second electrode structure to be parallel and equidistant, so that the shortest path of the current conducted between the circular electrode structures in the prior art is avoided, and the problem of melting breakdown caused by the current crowding effect is solved; in addition, the strip-shaped electrode structure can enable current to be spread more uniformly, and therefore luminous efficiency of the chip is improved.
To achieve the above and other related objects, the present invention provides an LED chip comprising:
a substrate;
the epitaxial layer is formed on the surface of the substrate and comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked, the first semiconductor layer forms a first table top, and the first semiconductor layer, the second semiconductor layer and the active layer form a second table top higher than the first table top;
the electrode structure comprises a first electrode structure and a second electrode structure, the first electrode structure is formed on the surface of the first table top and is connected with the first semiconductor layer, the second electrode structure is formed on the surface of the second table top and is connected with the second semiconductor layer of the second table top, and the first electrode structure and the second electrode structure are arranged in parallel in the first direction;
wherein the electrode structure extends in a first direction to a smaller dimension than it extends in a second direction perpendicular to the first direction.
Optionally, the electrode structure is rectangular.
Optionally, the electrode structure is an axisymmetric pattern formed by two opposite straight sides and two opposite arc sides, and the symmetry axis of the axisymmetric pattern is along the first direction and parallel to the two opposite straight sides.
Optionally, in the first direction, two arc sides of the first electrode structure in the electrode structure are curved away from the second electrode structure, and two arc sides of the second electrode structure in the electrode structure are curved away from the first electrode structure.
Optionally, in the first direction, two arc edges of the first electrode structure in the electrode structure are curved in a direction approaching the second electrode structure, and two arc edges of the second electrode structure in the electrode structure are curved in a direction separating from the first electrode structure.
Optionally, the curved edge has a bending distance in the first direction of 2 μm or less.
Optionally, the electrode structure comprises a current spreading bar and at least one conductive node, the current spreading bar and the conductive node forming a continuous structure; the extension distance of the conduction node in the second direction is smaller than the extension distance of the current expansion strip in the second direction; the conduction node extends a distance in the first direction that is greater than the current spreading bar.
Optionally, the conductive node in the electrode structure is arranged on a side of the first electrode structure and the second electrode structure opposite to each other.
Optionally, the conductive node of the first electrode structure is located at a side of the first electrode structure close to the second electrode structure, and the conductive node of the second electrode structure is located at a side of the second electrode structure far from the first electrode structure.
Optionally, at a position corresponding to the conduction node of the first electrode structure, an intersection line of the first mesa and the second mesa is curved toward the second mesa in the first direction, and a curved distance of the intersection line is less than or equal to 15% of a horizontal distance between the first electrode structure and the second electrode structure.
Optionally, the number of conductive nodes of the first electrode structure is the same as or different from the number of conductive nodes of the second electrode structure.
Optionally, when the number of conductive nodes of the first electrode structure is different from the number of conductive nodes of the second electrode structure, the conductive nodes of the first electrode structure and the second electrode structure are staggered with each other.
Optionally, the semiconductor device further comprises an insulating protection layer, wherein the insulating protection layer is formed on the surfaces of the first table top and the second table top.
Optionally, the method further comprises:
the first bonding pad is formed above the insulating protection layer and is electrically connected with the first electrode structure;
and the second bonding pad is formed above the insulating protection layer and is electrically connected with the second electrode structure.
The LED chip provided by the invention has at least the following beneficial effects:
the LED chip comprises a substrate, an epitaxial layer formed on the surface of the substrate, and a first electrode structure and a second electrode structure, wherein the extending size of the electrode structure in the first direction is smaller than the extending size of the electrode structure in the second direction perpendicular to the first direction, namely, the first electrode structure and the second electrode structure are formed into long strip-shaped structures extending along the second direction, and the first electrode structure and the second electrode structure are arranged in parallel in the first direction. The long strip-shaped electrode structures enable the conduction paths of the current between the first electrode structure and the second electrode structure to be parallel and equidistant, so that the shortest path of the current conducted between the circular electrode structures in the prior art is avoided, and the problem of melting breakdown caused by the current crowding effect is solved; in addition, the strip-shaped electrode structure can enable current to be spread more uniformly, and therefore luminous efficiency of the chip is improved.
In addition, the electrode structure of the present invention may further include a current spreading bar and a conductive node, and the conductive node extends a distance in the second direction that is smaller than the current spreading bar; the conductive node extends a greater distance in the first direction than the current spreading bar. The above-described current spreading bars form a long strip-like structure extending in the second direction, i.e., the current spreading bars of the first electrode structure and the second electrode structure form a structure parallel to each other. The electrode structure with the current extension strips and the conduction nodes can also avoid the concentration of charges at a certain point, avoid the melting breakdown problem caused by the concentration of charges at a certain point and increase the reliability of the chip.
The number of the conducting nodes in the electrode structure can be adjusted according to the actual size or the effective area of the LED chip, so that the design flexibility and the diversity of the electrode structure are improved.
Drawings
Fig. 1 is a schematic cross-sectional view of an LED chip according to a first embodiment.
Fig. 2 is a top view of an electrode structure of an LED chip according to a first embodiment.
Fig. 3 to 4 are top views showing an electrode structure of an LED chip according to a second embodiment.
Fig. 5 to 6 are plan views showing electrode structures of an LED chip according to a third embodiment.
Fig. 7 is a top view showing an electrode structure of an LED chip according to the fourth embodiment.
Fig. 8 to 9 are plan views showing electrode structures of LED chips according to a fifth embodiment.
Description of element reference numerals
1. Substrate 40 via
2. First electrode structure of epitaxial layer 51
21. Second electrode structure of first semiconductor layer 52
22. Current spreading bar of first electrode structure of active layer 511
23. Conductive node of first electrode structure of second semiconductor layer 512
210. Current spreading strip of second electrode structure of first table 521
220. Conductive node of second electrode structure of second mesa 522
3. First bonding pad of current spreading layer 61
4. Second bonding pad of current blocking layer 62
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
It should be noted that, the illustrations provided in the present embodiment only illustrate the basic concept of the present invention by way of illustration, but only the components related to the present invention are shown in the illustrations, rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, number, positional relationship and proportion of each component in actual implementation may be changed at will on the premise of implementing the present technical solution, and the layout of the components may be more complex.
Example 1
The present embodiment provides an LED chip, as shown in fig. 1, including: a substrate 1, an epitaxial layer 2 formed on the surface of the substrate 1, a current spreading layer 3, a current blocking layer 4, and a first electrode structure 51 and a second electrode structure 52.
The substrate 1 may be any suitable substrate such as a sapphire substrate or a silicon carbide substrate. The present embodiment takes a sapphire substrate as an example.
The epitaxial layer 2 includes a first semiconductor layer 21, an active layer 22, and a second semiconductor layer 23 stacked in this order. As shown in fig. 1, the epitaxial layer 2 forms a different mesa structure, wherein the first semiconductor layer 21 forms a first mesa 210, and the first semiconductor layer 21, the second semiconductor layer 23 and the active layer 22 form a second mesa 220 higher than the first mesa. In alternative embodiments, the second mesa 220 may also comprise part of the first semiconductor layer 21 at the same time.
As an example, the epitaxial layer 2 is a gallium nitride-based epitaxial layer, and the first semiconductor layer 21 is n-type doped gallium nitride, for example, si-, ge-, or Sn-doped n-type gallium nitride; the second semiconductor layer 23 is p-type doped gallium nitride, for example, p-type gallium nitride doped with Mg, zn, ca, sr, or Ba; the active layer 22 is a material capable of providing optical radiation, and may be a single quantum well layer or a multiple quantum well layer, and in this embodiment, the active layer 22 is a multiple quantum well layer.
A first electrode structure 51 and a second electrode structure 52 are also formed above the epitaxial layer 2. The first electrode structure 51 is formed on the surface of the first mesa 210 and connected to the first semiconductor layer 21; the second electrode structure 52 is formed on the surface of the second mesa 220 and connected to the second semiconductor layer 23. As an example, an N-type extension layer (not shown in the drawing) may be included between the first electrode structure 51 and the first semiconductor layer, and a P-type extension layer, i.e., 3 of the current extension layer, may be included between the second electrode structure 52 and the second semiconductor layer. As an example, the material of the current spreading layer 3 may be selected from ITO, WO 3 One or more of IWO, in the present embodiment, the material of the current spreading layer 3Is ITO.
In this embodiment, as shown in fig. 2, the first electrode structure 51 and the second electrode structure 52 are rectangular, and are arranged in parallel in the first direction (X direction shown in fig. 2), the short sides of the rectangle extend along the first direction (X direction shown in fig. 2), the long sides thereof extend along the second direction (Y direction shown in fig. 2) perpendicular to the first direction, and the conducting paths of the current between the first electrode structure 51 and the second electrode structure 52 are shown by arrows in fig. 2, i.e. the multiple conducting paths of the current between the two are parallel and equidistant, and no shortest path exists, so that the problem of melting breakdown caused by the current crowding effect is avoided.
In this embodiment, as shown in fig. 2, the first electrode structure and the second electrode structure are shown as standard rectangular structures, and it should be understood that the first electrode structure and the second electrode structure may also be similar kidney-shaped structures with rounded corners formed at four corners.
Still referring to fig. 1, the LED chip further includes an insulating protection layer 4, and the insulating protection layer 4 is formed on the surface of the epitaxial layer to cover the surfaces and sidewalls of the first mesa 210 and the second mesa 220. The insulating protective layer may include an insulating reflective structure, such as a DBR structure, formed on the surface of the epitaxial layer, and an insulating layer, such as SiO, formed over the insulating reflective structure 2 A layer. The insulating protective layer has a through hole in a region corresponding to the first electrode structure 51 and the second electrode structure 52.
As shown in fig. 1, the LED chip further includes a first pad 61 and a second pad 62. The first pad 61 and the second pad 62 are each formed above the insulating protection layer 4 and are disposed at a distance from each other so as to be insulated from each other. The first pad 61 is connected to the first semiconductor layer via a via hole in the insulating protective layer. The second pad 62 is connected to the second semiconductor layer via a via hole in the insulating protective layer.
The first electrode structure and the second electrode structure of the LED chip are arranged in parallel on the surface of the epitaxial layer and are rectangular structures, so that the conducting paths of current between the first electrode structure and the second electrode structure are parallel and equidistant, the shortest path of current conducted between the circular electrode structures in the prior art is avoided, and the problem of melting breakdown caused by current crowding effect is solved; in addition, the strip-shaped electrode structure can enable current to be spread more uniformly, and therefore luminous efficiency of the chip is improved.
Example two
The present embodiment also provides an LED chip, and the same points as those of the first embodiment are not described herein. The difference is that in the present embodiment, the electrode structure includes the current spreading bar and at least one conductive node, and the conductive node extends a distance in the second direction smaller than the current spreading bar, and the conductive node extends a distance in the second direction larger than the current spreading bar, thereby forming an elongated electrode structure extending in the first direction.
As shown in fig. 3, the current spreading bars 511 and 521 of the first and second electrode structures are both elongated structures, and the conductive node 512 of the first electrode structure is located at a side of the current spreading bar 511 near the second electrode structure 52, and the conductive node 522 of the second electrode structure is located at a side of the current spreading bar 521 near the first electrode structure 51. A current blocking layer is formed on the surfaces of the first mesa 210 and the second mesa 220 leaving a via 40 above the conductive node 512 of the first electrode structure and above the conductive node 522 of the second electrode structure, such that subsequently formed pads are connected to the electrode structure by the via 40.
In this embodiment, the first electrode structure 51 has at least one conductive node, and the number of conductive nodes of the second electrode structure 52 is the same as that of the first electrode structure 51, and may be one or a plurality of conductive nodes as shown in fig. 3. In another alternative embodiment of the present embodiment, the first electrode structure 51 has at least one conductive node, and the second electrode structure 52 also has at least one conductive node, and the number of conductive nodes is different, as shown in fig. 4, where the conductive nodes 512 of the first electrode structure and the conductive nodes 522 of the second electrode structure are staggered with each other.
The electrode structure of the LED chip provided by the embodiment is formed by the current expansion strips and the conducting nodes, and the current expansion strips of the first electrode structure and the second electrode structure are arranged in parallel on the surface of the epitaxial layer, so that the conducting paths of current between the first electrode structure and the second electrode structure are parallel and equidistant, and the problem of melting breakdown caused by the shortest conducting path between the electrode structures can be avoided. In addition, compared with the LED chip provided in the first embodiment, the electrode structure of the LED chip provided in the first embodiment has a smaller cross-sectional area in the direction parallel to the epitaxial layer, so that the light shielding area of the electrode structure is reduced, and the light emitting efficiency of the LED chip is further improved.
Example III
The present embodiment also provides an LED chip, and the same points as those of the second embodiment are not described herein. The difference is that, in this embodiment, the conductive node of the first electrode structure is located on a side of the current spreading bar near the second electrode structure, the conductive node of the second electrode structure is located on a side of the current spreading bar away from the first electrode structure, at this time, at a position corresponding to the conductive node of the first electrode structure, an intersection line of the first mesa and the second mesa is curved toward the second mesa in the first direction, and a curved distance of the intersection line is less than or equal to 15% of a horizontal distance between the first electrode structure and the second electrode structure.
As shown in fig. 5, the current spreading bar 511 of the first electrode structure and the current spreading bar 521 of the second electrode structure are both elongated structures, the conductive node 512 of the first electrode structure is located at a side of the current spreading bar 511 thereof near the second electrode structure 52, the conductive node 522 of the second electrode structure is located at a side of the current spreading bar 521 thereof away from the first electrode structure 51, and at a position corresponding to the conductive node 512 of the first electrode structure, the boundary line between the first mesa and the second mesa is curved toward the second mesa 220 in the first direction (X direction shown in the drawing), and the curved distance d of the boundary line 1 Less than or equal to 15% of the horizontal distance between the first electrode structure 51 and the second electrode structure 52.
In another alternative embodiment of the present embodiment, the current spreading bars 511 of the first electrode structure are elongated structures, and the current spreading bars 521 of the second electrode structure are "T"As shown in fig. 6, the boundary line between the first mesa and the second mesa is curved toward the second mesa 220 in the first direction (X direction shown in the figure) at the position corresponding to the conduction node 512 of the first electrode structure, and the curved distance d of the boundary line 1 Less than or equal to 15% of the horizontal distance between the first electrode structure 51 and the second electrode structure 52. Compared with the current expansion strip of the second electrode structure of the strip-shaped structure, the current expansion strip of the T-shaped structure is more beneficial to the expansion of current from the second electrode structure to the first electrode structure, so that the overall brightness of the LED chip can be improved.
The LED chip provided in this embodiment also has the function of avoiding the problem of melting breakdown caused by the shortest conduction path between the electrode structures, and can further improve the light emitting efficiency of the LED chip.
Example IV
The present embodiment also provides an LED chip, and the same points as those of the second embodiment are not described herein. The difference is that in this embodiment, the first electrode structure is rectangular, the second electrode structure comprises a current spreading bar and at least one conductive node, and the conductive node of the second electrode structure is located on a side of the current spreading bar facing away from the first electrode structure.
As shown in fig. 7, the first electrode structure 51 is rectangular, the short sides of the rectangle extend in a first direction (X direction shown in fig. 7) and the long sides thereof extend in a second direction (Y direction shown in fig. 7) perpendicular to the first direction, and in this embodiment, the first electrode structure is shown as a standard rectangular structure, it should be understood that the first electrode structure may be a similar kidney-shaped structure with rounded corners formed at four corners.
As shown in fig. 7, the second electrode structure 52 comprises a current spreading bar 521 and at least one conductive node 522, and the conductive node 522 of the second electrode structure is located on a side of its current spreading bar 521 facing away from the first electrode structure 51. The current spreading bar 521 of the second electrode structure shown in fig. 7 has a long bar structure, and it should be understood that the current spreading bar of the second electrode structure may have a T-shaped structure as well, that is, the same structure as the current spreading bar of the second electrode structure shown in fig. 6.
The LED chip provided in this embodiment also has the function of avoiding the problem of melting breakdown caused by the shortest conduction path between the electrode structures, and can further improve the light emitting efficiency of the LED chip.
Example five
The present embodiment also provides an LED chip, and the same points as those of the first embodiment are not described herein. The difference is that in this embodiment, the electrode structure is an axisymmetric pattern formed by two opposite straight lines and two opposite arc edges, the symmetry axis is along the first direction and is parallel to the two opposite straight edges, and the bending distance of the arc edges in the first direction is less than or equal to 2 μm.
In the present embodiment, as shown in fig. 8, the first electrode structure 51 and the second electrode structure 52 are each in an axisymmetric pattern composed of two opposite straight sides and two opposite curved sides, and the symmetry axes of the first electrode structure 51 and the second electrode structure 52 are along the first direction (X-axis direction shown in fig. 8) while being parallel to the two opposite straight sides in the first electrode structure 51 and the second electrode structure 52. In addition to this, the curved sides of the first electrode structure 51 and the second electrode structure 52 are curved by a distance d in a first direction (i.e., X direction shown in the drawing) 2 The first electrode structure 51 and the second electrode structure 52 are disposed opposite to each other with a thickness of 2 μm or less, i.e., the arc edge of the first electrode structure 51 is opposite to the arc edge of the second electrode structure 52.
In another alternative embodiment of the present embodiment, the first electrode structure 51 and the second electrode structure 52 may also be disposed in the same direction, i.e. the arc edge of the first electrode structure 51 and the arc edge of the second electrode structure 52 are oriented in the same direction, as shown in fig. 9. The LED chip provided in this embodiment also has the function of avoiding the problem of melting breakdown caused by the shortest conduction path between the electrode structures, and can further improve the light emitting efficiency of the LED chip.
The electrode structures of the LED chips shown in fig. 8 to 9 do not include conductive nodes, and it should be understood that the electrode structures of the present embodiment may be the same as those provided in the second to fourth embodiments, that is, include current spreading bars and conductive nodes as well.
In summary, the present invention provides an LED chip, which includes a substrate, an epitaxial layer formed on a surface of the substrate, and a first electrode structure and a second electrode structure, wherein a dimension of the electrode structure extending in a first direction is smaller than a dimension of the electrode structure extending in a second direction perpendicular to the first direction, that is, the first electrode structure and the second electrode structure are formed into a long strip-shaped structure extending along the second direction, and the first electrode structure and the second electrode structure are arranged in parallel in the first direction. The long strip-shaped electrode structures enable the conduction paths of the current between the first electrode structure and the second electrode structure to be parallel and equidistant, so that the shortest path of the current conducted between the circular electrode structures in the prior art is avoided, and the problem of melting breakdown caused by the current crowding effect is solved; in addition, the strip-shaped electrode structure can enable current to be spread more uniformly, and therefore luminous efficiency of the chip is improved.
In addition, the electrode structure of the present invention may further include a current spreading bar and a conductive node, and the conductive node extends a distance in the second direction that is smaller than the current spreading bar; the conductive node extends a greater distance in the first direction than the current spreading bar. The above-described current spreading bars form a long strip-like structure extending in the second direction, i.e., the current spreading bars of the first electrode structure and the second electrode structure form a structure parallel to each other. The electrode structure with the current extension strips and the conduction nodes can also avoid the concentration of charges at a certain point, avoid the melting breakdown problem caused by the concentration of charges at a certain point and increase the reliability of the chip.
The number of the conducting nodes in the electrode structure can be adjusted according to the actual size or the effective area of the LED chip, so that the design flexibility and the diversity of the electrode structure are improved.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (10)
1. An LED chip, comprising:
a substrate;
the epitaxial layer is formed on the surface of the substrate and comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked, the first semiconductor layer forms a first table top, and the first semiconductor layer, the second semiconductor layer and the active layer form a second table top higher than the first table top;
the electrode structure comprises a first electrode structure and a second electrode structure, the first electrode structure is formed on the surface of the first table top and is electrically connected with the first semiconductor layer, the second electrode structure is formed on the surface of the second table top and is electrically connected with the second semiconductor layer of the second table top, and the first electrode structure and the second electrode structure are arranged in parallel in the first direction;
wherein the electrode structure comprises a current spreading bar and at least one conductive node, a connection structure is arranged between the current spreading bar and the conductive node, so that the current spreading bar and the conductive node form a continuous structure; the current spreading bars include sides extending in a second direction perpendicular to the first direction, and sides of the current spreading bars of the first electrode structure and the current spreading bars of the second electrode structure, which are close to each other, are arranged in parallel with each other.
2. The LED chip of claim 1, wherein said electrode structures are formed in an axisymmetric pattern, the symmetry axes of said electrode structures extending along said first direction.
3. The LED chip of claim 1, wherein the edges of said current spreading bars extending in the second direction are formed as arcuate edges, and in said first direction, the arcuate edges of said first one of said electrode structures are curved in a direction toward said second electrode structure, and the arcuate edges of said second one of said electrode structures are curved in a direction away from said first electrode structure.
4. The LED chip of claim 1, wherein the vertical distance between the edges of the current spreading bars of the first electrode structure and the current spreading bars of the second electrode structure that are close to each other is 2 μm or less.
5. The LED chip of claim 1, wherein the conductive node of the second electrode structure is located on a side of the second electrode structure remote from the first electrode structure, and the conductive node of the first electrode structure is located on a side of the first electrode structure proximate to the second electrode structure.
6. The LED chip of claim 5, wherein the line of intersection of said first mesa and said second mesa is curved toward the second mesa in a first direction at a location corresponding to the conduction node of said first electrode structure, and wherein the curved distance of said line of intersection is less than or equal to 15% of the horizontal distance between said first electrode structure and said second electrode structure.
7. The LED chip of claim 1, wherein the number of conductive nodes of said first electrode structure is the same as or different from the number of conductive nodes of said second electrode structure.
8. The LED chip of claim 7, wherein when the number of conductive nodes of said first electrode structure is different from the number of conductive nodes of said second electrode structure, the conductive nodes of said first electrode structure and said second electrode structure are staggered with respect to each other.
9. The LED chip of claim 1, further comprising an insulating protective layer formed on surfaces of said first mesa and second mesa.
10. The LED chip of claim 9, further comprising:
the first bonding pad is formed above the insulating protection layer and is electrically connected with the first electrode structure;
and the second bonding pad is formed above the insulating protection layer and is electrically connected with the second electrode structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310579709.0A CN116404085A (en) | 2021-07-29 | 2021-07-29 | LED chip |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310579709.0A CN116404085A (en) | 2021-07-29 | 2021-07-29 | LED chip |
| CN202110864342.8A CN113644176B (en) | 2021-07-29 | 2021-07-29 | LED chip |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110864342.8A Division CN113644176B (en) | 2021-07-29 | 2021-07-29 | LED chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116404085A true CN116404085A (en) | 2023-07-07 |
Family
ID=78418995
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310579643.5A Pending CN117219712A (en) | 2021-07-29 | 2021-07-29 | LED chip |
| CN202310579771.XA Pending CN116469983A (en) | 2021-07-29 | 2021-07-29 | LED chip |
| CN202310579709.0A Pending CN116404085A (en) | 2021-07-29 | 2021-07-29 | LED chip |
| CN202110864342.8A Active CN113644176B (en) | 2021-07-29 | 2021-07-29 | LED chip |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310579643.5A Pending CN117219712A (en) | 2021-07-29 | 2021-07-29 | LED chip |
| CN202310579771.XA Pending CN116469983A (en) | 2021-07-29 | 2021-07-29 | LED chip |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110864342.8A Active CN113644176B (en) | 2021-07-29 | 2021-07-29 | LED chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (4) | CN117219712A (en) |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07111339A (en) * | 1993-10-12 | 1995-04-25 | Sumitomo Electric Ind Ltd | Surface emission type semiconductor light emitting device |
| JP2921746B2 (en) * | 1995-01-31 | 1999-07-19 | 日亜化学工業株式会社 | Nitride semiconductor laser device |
| US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
| JP2002016285A (en) * | 2000-06-27 | 2002-01-18 | National Institute Of Advanced Industrial & Technology | Semiconductor light-emitting element |
| JP2007173269A (en) * | 2005-12-19 | 2007-07-05 | Showa Denko Kk | Flip-chip semiconductor light emitting device, method of manufacturing same, structure for mounting same, and light emitting diode lamp |
| JP2011009572A (en) * | 2009-06-26 | 2011-01-13 | Citizen Electronics Co Ltd | Flip-chip packaging type led and method for manufacturing flip-chip packaging type led |
| KR100977682B1 (en) * | 2010-01-15 | 2010-08-24 | (주)더리즈 | Semiconductor light emitting device |
| JP5517882B2 (en) * | 2010-10-20 | 2014-06-11 | シャープ株式会社 | Nitride semiconductor light emitting device |
| KR20120045919A (en) * | 2010-11-01 | 2012-05-09 | 삼성엘이디 주식회사 | Semiconductor light emitting device |
| JP2013258177A (en) * | 2012-06-11 | 2013-12-26 | Toyoda Gosei Co Ltd | Group-iii nitride semiconductor light-emitting element |
| CN204441323U (en) * | 2015-01-07 | 2015-07-01 | 湘能华磊光电股份有限公司 | Flip LED chips |
| CN205488192U (en) * | 2016-04-07 | 2016-08-17 | 深圳市天瑞和科技发展有限公司 | Nitride -based flip -chip LED chip |
| CN205692852U (en) * | 2016-04-07 | 2016-11-16 | 深圳市天瑞和科技发展有限公司 | A kind of flip LED chips |
| CN105633238B (en) * | 2016-04-07 | 2018-04-13 | 深圳市天瑞和科技发展有限公司 | A kind of flip LED chips and its manufacture method |
| CN206992140U (en) * | 2016-12-30 | 2018-02-09 | 江苏晶瑞半导体有限公司 | A kind of small size flip LED chips layout distribution structure |
| CN110034224A (en) * | 2019-04-26 | 2019-07-19 | 中国科学院长春光学精密机械与物理研究所 | A kind of transfer method based on bar shaped Micro-LED |
-
2021
- 2021-07-29 CN CN202310579643.5A patent/CN117219712A/en active Pending
- 2021-07-29 CN CN202310579771.XA patent/CN116469983A/en active Pending
- 2021-07-29 CN CN202310579709.0A patent/CN116404085A/en active Pending
- 2021-07-29 CN CN202110864342.8A patent/CN113644176B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN117219712A (en) | 2023-12-12 |
| CN113644176A (en) | 2021-11-12 |
| CN113644176B (en) | 2023-06-02 |
| CN116469983A (en) | 2023-07-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101897046B (en) | Semiconductor light emitting device and method of fabricating the same | |
| CN101911321B (en) | Semiconductor light emitting device | |
| JP6714328B2 (en) | Light emitting device and lighting system | |
| KR102357188B1 (en) | Light emitting device | |
| EP2439796B1 (en) | Light emitting device and lighting system | |
| KR20120086876A (en) | A light emitting device | |
| KR20100113008A (en) | Light emitting diode device and method for forming the same | |
| CN102891160A (en) | Semiconductor light emitting device and light emitting apparatus | |
| US9859331B2 (en) | Preparation method for high-voltage LED device integrated with pattern array | |
| US10276750B2 (en) | Bonding electrode structure of flip-chip led chip and fabrication method | |
| US10490701B2 (en) | Light emitting diode chip | |
| TW201324863A (en) | Light emitting diode element and flip-chip light emitting diode package | |
| KR101793276B1 (en) | Light emitting device | |
| JP5141086B2 (en) | Semiconductor light emitting device | |
| KR20160001259A (en) | Light emitting device | |
| JP5125795B2 (en) | Semiconductor light emitting element and light emitting device | |
| KR20180091700A (en) | Light emitting device | |
| CN108172668B (en) | Light-emitting diode | |
| US20190051695A1 (en) | Device comprising a plurality of diodes | |
| CN113644176B (en) | LED chip | |
| US20180233628A1 (en) | Diode with an improved electric current injection | |
| WO2013018938A1 (en) | Semiconductor light-emitting element | |
| US9312449B2 (en) | Light-emitting device with reflecting electrode | |
| KR20140122970A (en) | Light Emitting Device with Improved Current Spreading | |
| CN103178182A (en) | Light emitting diode element and flip chip type light emitting diode potted element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |