CN108172668B - Light-emitting diode - Google Patents
Light-emitting diode Download PDFInfo
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- CN108172668B CN108172668B CN201810039674.0A CN201810039674A CN108172668B CN 108172668 B CN108172668 B CN 108172668B CN 201810039674 A CN201810039674 A CN 201810039674A CN 108172668 B CN108172668 B CN 108172668B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0033—Devices characterised by their operation having Schottky barriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
Abstract
The present invention relates to a light emitting diode comprising: the semiconductor device includes a substrate, an n-type nitride semiconductor layer formed on the upper surface of the substrate, an active layer formed in a predetermined region on the upper surface of the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the upper surface of the active layer, a p-type electrode formed on the upper surface of the p-type nitride semiconductor layer, an n-type electrode formed in another predetermined region on the upper surface of the n-type nitride semiconductor layer, an insulating layer in contact with the upper end surface of the p-type nitride semiconductor layer and the side surface of the p-type nitride semiconductor layer with the active layer, and a metal bridge in contact with the insulating layer and the n-type electrode. The invention provides a light-emitting diode, which protects electrostatic discharge through a metal bridge.
Description
Technical Field
The present invention relates to a light emitting diode.
Background
In the semiconductor light emitting device, when a forward voltage is applied to the light emitting device, holes of the p-type semiconductor layer are recombined with electrons of the n-type semiconductor layer, and light of a wavelength corresponding to a band gap energy is emitted. Nitride semiconductors (AlxInyGa1-x-yN; 0. ltoreq. x.ltoreq.1, 0. ltoreq. y.ltoreq.1, 0. ltoreq. x + y. ltoreq.1) are prominent materials in light emitting devices, and light of different wavelengths can be emitted by changing the ratio of aluminum, indium, gallium components therein.
However, the difference in lattice constant and the difference in thermal expansion coefficient between the substrate and the semiconductor tend to cause crystal defects in the nitride semiconductor. When a high voltage is applied to the light emitting diode from the outside, a current may be concentrated at the location of the crystal defect, and the light emitting diode may be damaged. Also, it is known to those skilled in the art that the electrostatic discharge may reduce the light extraction rate of the nitride-based light emitting diode.
In the prior art, a conventional led for preventing electrostatic discharge is often connected in parallel with a reverse pn junction diode (hereinafter referred to as "ESD diode"). However, the ESD diode requires a certain area, which occupies a part of the light emitting area of the diode, and thus there is a short place where high integration is difficult.
Disclosure of Invention
The present invention is directed to a light emitting diode to overcome the shortcomings of the prior art.
In order to achieve the purpose, the technical scheme of the invention is as follows: a light emitting diode comprising: a substrate, an n-type nitride semiconductor layer formed on the upper surface of the substrate, an active layer formed in a predetermined region on the upper surface of the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the upper surface of the active layer, a p-type electrode formed on the upper surface of the p-type nitride semiconductor layer, an n-type electrode formed in another predetermined region on the upper surface of the n-type nitride semiconductor layer, an insulating layer in contact with the upper end surface of the p-type nitride semiconductor layer and the upper surface of the p-type nitride semiconductor layer and the active layer, respectively, and a metal bridge in contact with the upper end surface and the side surface of the insulating layer and the side surfaces and the upper end surface of the n-type electrode, respectively.
In one embodiment of the present invention, the insulating layer includes an upper insulating portion having a lower end surface in contact with an upper end surface of the p-type nitride semiconductor layer and a side insulating portion having a side surface in contact with the p-type nitride semiconductor layer and the active layer side surface; the upper insulating portion has a thickness smaller than that of the side insulating portion.
In an embodiment of the present invention, the metal bridge and the n-type electrode are made of the same conductive material.
In an embodiment of the present invention, the metal bridge includes: the semiconductor device includes a disk electrode, an extended electrode extending in the direction of the n-type electrode along the disk electrode, and a branch electrode branched from an end of the extended electrode.
In an embodiment of the invention, the metal bridge is disposed on a straight line where the end of the branch electrode and the center point of the cross section of the n-type electrode are located.
Further, the present invention provides a light emitting diode, including: the semiconductor device comprises a substrate, an n-type nitride semiconductor layer formed on the upper surface of the substrate, an active layer formed in a preset area on the upper surface of the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the upper surface of the active layer, a p-type electrode formed on the upper surface of the p-type nitride semiconductor layer, an n-type electrode formed in another preset area on the upper surface of the n-type nitride semiconductor layer, an insulating layer respectively contacted with the upper end surface of the p-type nitride semiconductor layer and the upper surface of the p-type nitride semiconductor layer and the active layer, and a metal bridge respectively contacted with the upper end surface of the p-type nitride semiconductor layer, the upper end surface and the side surface of the insulating layer, and the side surface and the upper end surface of the n-type.
In one embodiment of the present invention, the insulating layer includes an upper insulating portion having a lower end surface in contact with an upper end surface of the p-type nitride semiconductor layer and a side insulating portion having a side surface in contact with the p-type nitride semiconductor layer and the active layer side surface; the upper insulating portion has a thickness smaller than that of the side insulating portion.
In an embodiment of the invention, the metal bridge and the n-type electrode are made of the same conductive material.
In an embodiment of the present invention, the metal bridge includes: the semiconductor device includes a disk electrode, an extended electrode extending in the direction of the n-type electrode along the disk electrode, and a branch electrode branched from an end of the extended electrode.
In an embodiment of the invention, the metal bridge is disposed on a straight line where the end of the branch electrode and the center point of the cross section of the n-type electrode are located.
Compared with the prior art, the invention has the following beneficial effects:
(1) the light emitting diode provided by the invention comprises an insulating layer and a plurality of metal bridges. The insulating layer is formed locally on the upper surface of the p-type nitride semiconductor layer adjacent to the n-type electrode, and covers the side surfaces of the p-type nitride semiconductor layer and the active layer close to the n-type electrode. The metal bridge is covered on the insulating layer, and one end of the metal bridge is connected with the n-type electrode.
(2) One end of the metal bridge is connected to the n-type electrode, and the other end covers the upper surface of the p-type nitride semiconductor layer. The metal bridge may form electrical insulation from the upper surface of the p-type nitride semiconductor layer through the insulating layer, or may extend beyond a region of the insulating layer to form a schottky contact with the upper surface of the p-type nitride semiconductor layer.
(3) When the metal bridge is electrically insulated from the upper surface of the p-type nitride semiconductor layer by the insulating layer, the insulating layer formed on the p-type nitride semiconductor layer may be referred to as an insulating film. When a high voltage is applied in reverse to the nitride-based light emitting diode, there is a greater probability that a current may not flow through crystal defects of the nitride semiconductor layer but through the metal bridge and the insulating film.
(4) When the distance between the metal bridge and the p-type electrode is reduced, the probability that electrostatic discharge will pass directly through the metal bridge will increase without passing through the nitride boundary semiconductor layer. Accordingly, the p-type electrode may include an extension electrode extending in the n-type electrode direction and a plurality of branch electrodes branching off from the end of the extension electrode. The metal bridge is positioned on the straight line of the tail part of the branch electrode and the central point of the n-type electrode, so that the distance between the tail end of the metal bridge and the n-type electrode is shortest, and the electrostatic discharge caused by the lattice defect is minimized as much as possible.
(5) The metal bridge is made of the same material as the n-type electrode so as to form a better electrical connection with the n-type electrode, and can be simultaneously formed in the process stage of forming the n-type electrode, thereby simplifying the manufacturing process.
(6) When the metal bridge extends beyond the insulating layer to form a schottky contact with the upper surface of the p-type nitride semiconductor layer, a schottky barrier may be formed between the upper surface of the p-type nitride semiconductor layer and the metal bridge. When a reverse voltage is applied, the absolute value of the breakdown voltage of the schottky contact is smaller than that of the PN junction of the nitride semiconductor, and thus, a current can flow through the metal bridge, thereby preventing damage due to electrostatic discharge.
(7) The metal bridge forms a Schottky contact with the p-type nitride semiconductor layer, and the n-type electrode forms an ohmic contact with the n-type nitride semiconductor layer and the p-type electrode forms an ohmic contact with the p-type nitride semiconductor layer. Therefore, in order to form ohmic contact between the n-type electrode and the p-type electrode, an ohmic contact layer may be further added to the interface layer between the electrode layer and the semiconductor layer.
The technical effects of the present invention are not limited by the above-mentioned techniques, and are also obvious compared with the common techniques or other techniques not mentioned.
Drawings
Fig. 1 is a cross-sectional view of a light emitting diode according to a first embodiment of the invention.
Fig. 2 is a plan view of a light emitting diode according to a first embodiment of the invention.
Fig. 3 is a plan view of another light emitting diode according to an embodiment of the invention.
Fig. 4 is a cross-sectional view of a light emitting diode according to a second embodiment of the invention.
Fig. 5 is a plan view of a light emitting diode according to a second embodiment of the invention.
Fig. 6 is a plan view of another light emitting diode according to a second embodiment of the invention.
Detailed Description
The technical scheme of the invention is specifically explained below with reference to the accompanying drawings.
Example one
Fig. 1 is a cross-sectional view of the led designed in this embodiment. The light emitting diode includes: a substrate (10), an n-type nitride semiconductor layer (21) formed on the upper surface of the substrate (10), an active layer (23) formed on a partial region of the upper surface of the n-type nitride semiconductor layer (21), a p-type nitride semiconductor layer (25) formed on the upper surface of the active layer, and a p-type electrode (70) formed on the upper surface of the p-type nitride semiconductor layer (25); an n-type electrode (60) formed in another partial region of the upper surface of the n-type nitride semiconductor (21); an insulating layer (30) formed on the side surfaces of the p-type nitride semiconductor layer (25) and the active layer (23) adjacent to the n-type electrode (60) and on a partial position of the upper surface of the p-type nitride semiconductor layer (25); and a metal bridge (40) formed on the upper end face and the side face of the n-type electrode (60) and the upper end face and the side face of the insulating layer (30), wherein the metal bridge (40) is continuously arranged along the upper end face of the n-type electrode (60), the side face of the insulating layer (30) and the upper end face of the insulating layer (30).
Further, in the present embodiment, various known materials suitable for the substrate of the nitride-based light emitting diode can be used as the base plate (10) without limitation. In general, substances capable of growing high-quality nitride semiconductors include: SiC, Si, GaN, ZnO, GaAs, LiAl
2O
3BN and AlN, etc., are not limitedAnd (4) limiting.
Further, in this embodiment, an active layer (23) is formed on a part of the region of an n-type nitride semiconductor layer (21) formed on a substrate (10), and a p-type nitride semiconductor layer (25) including a doped nitride-based semiconductor layer is formed on the active layer (23). The nitride-based semiconductor layer may include AlxInyGa1-X-yN (0. ltoreq. X.ltoreq.1, 0. ltoreq. Y.ltoreq.1, 0. ltoreq. X + y.ltoreq.1), the n-type dopant may include silicon (Si), germanium (Ge), tin (Sn), and the p-type dopant may include magnesium (Mg), zinc (Zn), cadmium (Cd).
Further, in this embodiment, the active layer (23) may have a single quantum well structure or a multiple quantum well structure. The active layer (23) of the multiple quantum well structure may be a structure in which semiconductor layers of a large band gap and semiconductor layers of a small band gap are alternately stacked.
Further, in this embodiment, a seed layer (not shown) or a buffer layer (not shown) of a high-quality gallium nitride semiconductor can be selectively grown between the n-type nitride semiconductor layer (21) and the substrate (10).
Further, in the present embodiment, the n-type electrode (60) formed on the exposed region of the n-type nitride semiconductor layer (21) and the p-type electrode (70) formed on the p-type nitride semiconductor layer (25) may use various known conductive materials without limitation. An ohmic contact layer (51) and an ohmic contact layer (53) can be formed under the n-type electrode (60) and the p-type electrode (70), respectively.
Further, in this embodiment, an insulating layer (30) is formed at a partial position on the side surfaces of the p-type nitride semiconductor layer (25) and the active layer (23) adjacent to the n-type electrode (60) and on the upper surface of the p-type nitride semiconductor layer (25). The material forming the insulating layer includes, but is not limited to, various widely recognized substances. The material of the insulating layer (30) can be SiO widely used in the manufacture of light emitting diodes
xOr SiN.
Further, in the present embodiment, the insulating layer (30) includes an upper insulating film (31) formed on the upper surface of the p-type nitride semiconductor layer (25) and a side insulating film (33) formed on the side surfaces of the active layer (23) and the p-type nitride semiconductor layer (25). The upper insulating film (31) is very thin compared to the side insulating film (33), and thus, a reverse high voltage may flow only through the upper insulating film (31).
Further, in the present embodiment, a metal bridge (40) electrically connected to the n-type electrode (60) is formed on the insulating layer (30). The metal bridge (40) is continuously provided along the upper end surface of the n-type electrode (60), the side surface of the insulating layer (30), and the upper end surface of the insulating layer (30). And the metal bridge is arranged on the upper surface of the ohmic contact layer (51) between the side surface of the n-type electrode (60) and the side surface of the insulating layer (30).
In this embodiment, the metal bridge (40) and the n-type electrode (60) use the same conductive material so that both form a good electrical contact. Furthermore, the metal bridge (40) is formed at the same time when the n-type electrode (60) is formed, so that the process can be simplified.
Further, as shown in fig. 2 and 3, the p-type electrode (70) includes a pad electrode (71), an extension electrode (73) extending from the pad electrode (71) in the direction of the n-type electrode (60), and branch electrodes (75 a) and (75 b) branching off from the ends of the extension electrode. The extension electrode (73) and the plurality of branch electrodes shorten the distance between the metal bridge (40) and the p-type electrode (70). With this arrangement, when a forward voltage is applied, a current will be uniformly distributed over the entire surface of the p-type semiconductor layer (25) having a high resistance, thereby increasing the light emission rate. Furthermore, the form and number of the branch electrodes (75 a, 75 b) can be adjusted according to the efficient spread of the current on the p-type semiconductor layer (25).
Further, in the present embodiment, as shown in fig. 2 and 3, the cross-sections of the branch electrodes (75 a) and (75 b) may be circular arcs or straight line segments connected in the first place.
Further, in the present embodiment, the metal bridge (40) may be disposed on a straight line where the ends of the branch electrodes (75 a) and (75 b) and the center point of the n-type electrode are located. The distances (d 1) and (d 2) between the ends of the branch electrodes (75 a) and (75 b) and the center point of the n-type electrode are the same. The closer the metal bridge (40) and the distance between the branch electrodes (75 a, 75 b) are, the higher the probability of current flowing through the metal bridge (40) is, and the less the nitride-based semiconductor crystal is damaged by electrostatic discharge.
Further, in the present embodiment, when a reverse voltage of electrostatic discharge is applied to the light emitting diode, a current flows through the n-type electrode 60, the metal bridge 40, the upper insulating film 31, the p-type nitride semiconductor layer 25, and the p-type electrode 70 in this order. Therefore, the damage of the light emitting diode caused by the electrostatic discharge can be prevented.
Example two
Fig. 4 is a cross-sectional view of the led designed in this embodiment. The light emitting diode includes: a substrate (10) on which an n-type nitride semiconductor layer (21) is formed on the upper surface of the substrate (10), an active layer (23) formed on a part of the upper surface of the n-type nitride semiconductor layer (21), a p-type nitride semiconductor layer (25) formed on the active layer (23), and a p-type electrode (70) formed on the upper surface of the p-type nitride semiconductor layer (25); an n-type electrode (60) formed in another partial region of the upper surface of the n-type nitride semiconductor layer (21); an insulating layer (30) formed on the side surfaces of the p-type nitride semiconductor layer (25) and the active layer (23) adjacent to the n-type electrode (60) and on a partial position of the upper surface of the p-type nitride semiconductor layer (25); and a metal bridge (40) formed on the upper end face and the side face of the n-type electrode (60), the upper end face and the side face of the insulating layer (30), and the upper end face of the p-type nitride semiconductor layer (25), wherein the metal bridge (40) is continuously provided along the upper end face of the n-type electrode (60), the side face of the insulating layer (30), the upper end face of the insulating layer (30), and the upper end face of the p-type nitride semiconductor layer (25).
Further, in the present embodiment, various known materials suitable for the substrate of the nitride-based light emitting diode can be used as the base plate (10) without limitation. In general, substances capable of growing high-quality nitride semiconductors include: SiC, Si, GaN, ZnO, GaAs, LiAl
2O
3、BN, AlN, etc., without limitation.
Further, in this embodiment, an active layer (23) is formed on a part of the region of an n-type nitride semiconductor layer (21) formed on a substrate (10), and a p-type nitride semiconductor layer (25) including a doped nitride-based semiconductor layer is formed on the active layer (23). The nitride-based semiconductor layer may include AlxInyGa1-X-yN (0. ltoreq. X.ltoreq.1, 0. ltoreq. Y.ltoreq.1, 0. ltoreq. X + y.ltoreq.1), the n-type dopant may include silicon (Si), germanium (Ge), tin (Sn), and the p-type dopant may include magnesium (Mg), zinc (Zn), cadmium (Cd).
Further, in this embodiment, the active layer (23) may have a single quantum well structure or a multiple quantum well structure. The active layer (23) of the multiple quantum well structure may be a structure in which semiconductor layers of a large band gap and semiconductor layers of a small band gap are alternately stacked.
Further, in this embodiment, a seed layer (not shown) or a buffer layer (not shown) of a high-quality gallium nitride semiconductor can be selectively grown between the n-type semiconductor layer (21) and the substrate (10).
Further, in the present embodiment, the n-type electrode (60) formed on the exposed region of the n-type nitride semiconductor layer (21) and the p-type electrode (70) formed on the p-type nitride semiconductor layer (25) may use various known conductive materials without limitation. An ohmic contact layer (51) and an ohmic contact layer (53) may be formed under the n-type electrode (60) and the p-type electrode (70), respectively.
Further, in this embodiment, an insulating layer (30) is formed at a partial position on the side surfaces of the p-type nitride semiconductor layer (25) and the active layer (23) adjacent to the n-type electrode (60) and on the upper surface of the p-type nitride semiconductor layer (25). The material forming the insulating layer includes, but is not limited to, various widely recognized substances. The material of the insulating layer (30) can be SiO widely used in the manufacture of light emitting diodes
xOr SiN.
Further, in the present embodiment, the insulating layer (30) includes an upper insulating film (31) formed on the upper surface of the p-type nitride semiconductor layer (25) and a side insulating film (33) formed on the side surfaces of the active layer (23) and the p-type nitride semiconductor layer (25). The upper insulating film (31) is very thin compared to the side insulating film (33), and thus, a reverse high voltage may flow only through the upper insulating film (31).
Further, in this embodiment, a part of the metal bridge (40) is in contact with the upper surface of the p-type nitride semiconductor layer (25) beyond the insulating layer (30) to form a schottky contact, and the other end is in contact with the n-type electrode (60).
In this embodiment, the metal bridge (40) and the n-type electrode (60) use the same conductive material so that both form a good electrical contact. Furthermore, the metal bridge (40) can be formed synchronously in the stage of forming the n-type electrode (60), thereby simplifying the manufacturing process.
Further, in the present embodiment, as shown in fig. 5 and 6, the p-type electrode (70) includes a pad electrode (71), an extension electrode (73) extending from the pad electrode (71) toward the n-type electrode (60), and branch electrodes (75 a) and (75 b) branching off from the ends of the extension electrode. The extension electrode (73) and the plurality of branch electrodes shorten the distance between the metal bridge (40) and the p-type electrode (70). With this arrangement, when a forward voltage is applied, a current will be uniformly distributed over the entire surface of the p-type semiconductor layer (25) having a high resistance, thereby increasing the light emission rate. Furthermore, the form and number of the branch electrodes (75 a, 75 b) can be adjusted according to the efficient spread of the current on the p-type semiconductor layer (25).
Further, in the present embodiment, as shown in fig. 5 and fig. 6, the cross-section of the branch electrodes (75 a) and (75 b) may be circular arcs or straight line segments connected in the first place.
Further, in the present embodiment, the metal bridge (40) may be disposed on a straight line where the ends of the branch electrodes (75 a) and (75 b) and the center point of the n-type electrode are located. The distances (d 1) and (d 2) between the ends of the branch electrodes (75 a) and (75 b) and the center point of the n-type electrode are the same. The closer the metal bridge (40) and the distance between the branch electrodes (75 a, 75 b) are, the higher the probability of current flowing through the metal bridge (40) is, and the less the nitride-based semiconductor crystal is damaged by electrostatic discharge.
Further, in this embodiment, a schottky barrier is formed on a surface (41) where the p-type nitride semiconductor layer (25) and the metal bridge (40) are in contact. When a reverse voltage is applied, the absolute value of the breakdown voltage of the schottky contact is smaller than the absolute value of the breakdown voltage of the PN junction of the nitride semiconductor, and therefore, a current can flow through the metal bridge (40), thereby preventing damage due to electrostatic discharge.
Further, in the embodiment, an ohmic contact layer (51) and an ohmic contact layer (53) can be arranged below the n-type electrode (60) and the p-type electrode (70), and the ohmic contact layer (51) and the ohmic contact layer (53) are arranged between the electrodes and the semiconductor layer. However, since the metal bridge (40) is to make Schottky contact with the p-type nitride semiconductor layer (25), the surface (41) to which the metal bridge (40) is in contact is not formed with an ohmic contact layer.
The above are preferred embodiments of the present invention, and all changes made according to the technical scheme of the present invention that produce functional effects do not exceed the scope of the technical scheme of the present invention belong to the protection scope of the present invention.
Claims (8)
1. A light emitting diode, comprising: a substrate, an n-type nitride semiconductor layer formed on the upper surface of the substrate, an active layer formed on a predetermined region of the upper surface of the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the upper surface of the active layer, a p-type electrode formed on the upper surface of the p-type nitride semiconductor layer, an n-type electrode formed on another predetermined region of the upper surface of the n-type nitride semiconductor layer, an insulating layer in contact with the upper end surface of the p-type nitride semiconductor layer and the upper surface of the p-type nitride semiconductor layer and the active layer, respectively, and a metal bridge in contact with the upper end surface and the side surface of the insulating layer and the side surface and the upper end surface of the n-type electrode, respectively, wherein the metal bridge comprises the following components in sequential connection: the semiconductor device includes a disk electrode, an extended electrode extending in the direction of the n-type electrode along the disk electrode, and a branch electrode branched from an end of the extended electrode.
2. The light-emitting diode according to claim 1, wherein the insulating layer comprises an upper insulating portion having a lower end surface in contact with an upper end surface of the p-type nitride semiconductor layer and a side insulating portion having a side surface in contact with a side surface of the p-type nitride semiconductor layer and the active layer; the upper insulating portion has a thickness smaller than that of the side insulating portion.
3. The led of claim 1, wherein said metal bridge and said n-type electrode are made of the same conductive material.
4. The light-emitting diode of claim 1, wherein the metal bridge is disposed on a straight line between the end of the branch electrode and the center point of the cross section of the n-type electrode.
5. A light emitting diode, comprising: a substrate, an n-type nitride semiconductor layer formed on the upper surface of the substrate, an active layer formed in a predetermined region on the upper surface of the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the upper surface of the active layer, a p-type electrode formed on the upper surface of the p-type nitride semiconductor layer, an n-type electrode formed in another predetermined region on the upper surface of the n-type nitride semiconductor layer, an insulating layer in contact with the upper end surface of the p-type nitride semiconductor layer and the upper surface of the p-type nitride semiconductor layer and the active layer, respectively, and a metal bridge in contact with the upper end surface of the p-type nitride semiconductor layer, the upper end surface and the side surface of the insulating layer, and the side surface and the upper end surface of the n-type electrode, respectively, wherein the metal bridge comprises the following: the semiconductor device includes a disk electrode, an extended electrode extending in the direction of the n-type electrode along the disk electrode, and a branch electrode branched from an end of the extended electrode.
6. The light-emitting diode according to claim 5, wherein the insulating layer comprises an upper insulating portion having a lower end surface in contact with an upper end surface of the p-type nitride semiconductor layer and a side insulating portion having a side surface in contact with a side surface of the p-type nitride semiconductor layer and the active layer; the upper insulating portion has a thickness smaller than that of the side insulating portion.
7. The LED of claim 5 wherein said metal bridge is made of the same conductive material as said n-type electrode.
8. The LED of claim 5 wherein the metal bridge is disposed on a line between the end of the branch electrode and the center of the cross-section of the n-type electrode.
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| CN108790892A (en) * | 2018-06-20 | 2018-11-13 | 重庆明斯克电气有限公司 | A kind of charging monitoring managing device of electric vehicle |
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