CN116354717A - 一种超薄陶瓷基片的加工方法 - Google Patents

一种超薄陶瓷基片的加工方法 Download PDF

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CN116354717A
CN116354717A CN202310398300.9A CN202310398300A CN116354717A CN 116354717 A CN116354717 A CN 116354717A CN 202310398300 A CN202310398300 A CN 202310398300A CN 116354717 A CN116354717 A CN 116354717A
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王春堂
吴美和
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Taidou Hi Tech New Materials Xiamen Co ltd
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Abstract

本发明公开一种超薄陶瓷基片的加工方法,首先将陶瓷粉料按照一定重量比混合,置于模具内;后通过等静压设备,压制出高密度的胚料;接着将得到的胚料进行烧结,得到结构陶瓷半成品;然后将结构陶瓷半成品磨平后通过陶瓷基片切割机进行线切,得到超薄陶瓷基片半成品;再将超薄陶瓷基片半成品置于工装中通过研磨机进行研磨;最后将研磨后的超薄陶瓷基片通过抛光机进行抛光,得到成品。本发明在保证成品率不下降的情况下,优化生产工艺,一次研磨成型极薄的超薄陶瓷基片。

Description

一种超薄陶瓷基片的加工方法
技术领域
本发明涉及陶瓷基片加工技术领域,尤其涉及一种超薄陶瓷基片的加工方法。
背景技术
结构陶瓷属于一种缝隙均匀的陶瓷,具有优越的强度、硬度、绝缘性、热传导、耐高温、耐氧化、耐腐蚀、耐磨耗、高温强度等特点。陶瓷的其中一项重要的加工工艺是进行切割,往往借助切割工具进行切割处理,但是对于大部分陶瓷来说,自身的质地较脆,随着锯片或者激光的伸入,极易由于受力的偏差导致破碎,从而提高加工成本,现有的切割机为了满足成品率的要求,通常仅能加工几十毫米的陶瓷基片,难以满足超薄基片陶瓷的切割需求,且操作时控制精度低,加工效率低,加工效果难以保持均匀。
现有的超薄陶瓷基片加工工艺中,常规采取流延工艺为主。首先将陶瓷粉料按照一定比例混合后形成浆料,通过刮刀将基带上的料浆刮到固定厚度,一般是0.5mm左右后,进行干燥和固化,得到毛胚料。将毛胚料进行烧结后得到半成品基片,将半成品基片通过粗磨,中磨,精模后得到0.2-0.3mm的超薄陶瓷基片,但是因为基料的原因,通过流岩工艺得到的毛坯料密度较低,强度较差,在后续打磨过程中很容易发生碎裂,产品成品率太低,加工工序复杂。
发明内容
本发明的目的在于提供一种超薄陶瓷基片的加工方法,在保证成品率不下降的情况下,优化生产工艺,一次研磨成型极薄的超薄陶瓷基片。
为达成上述目的,本发明提供一种超薄基片陶瓷的加工方法,组成所述陶瓷基片的组分及其按质量百分比的含量为:Zr(Hf)O2:≥94%,Y2O3:5.25±0.25%,Al2O3:0.25±0.02%,Fe2O3:<0.005%,SiO2:<0.02%,TiO2:<0.005%,Na2O:<0.005%,Cl-:<0.05%,H2O:<1%;
所述加工方法以下包括步骤:
步骤1:首先将上述原料组分按照重量比混合成陶瓷粉料,将陶瓷粉料置于模具内,接着通过静压设备,压制出高密度的胚料;
步骤2:将步骤1得到的胚料进行烧结,得到结构陶瓷半成品;
步骤3:采用磨床设备将步骤2得到的结构陶瓷半成品的表面磨平;
步骤4:将步骤3磨平后得到的结构陶瓷半成品通过陶瓷基片切割机进行线切,得到厚度在0.08~0.3mm之间的超薄陶瓷基片半成品;
步骤5:将步骤4得到的超薄陶瓷基片半成品置于工装中通过研磨机进行研磨,得到厚度在0.05~0.15mm之间的超薄陶瓷基片;
步骤6:将步骤5研磨后得到的超薄陶瓷基片通过抛光机进行抛光,抛光至表面无划痕,得到成品。
进一步,所述步骤2中,具有三个烧结阶段:第一阶段的烧结温度为140~150℃,保温时间为5min;第二阶段的烧结温度为1100~1200℃,保温时间为1h;第三阶段的烧结温度为1400~1450℃,保温时间为3h。
进一步,所述步骤5中的研磨机的底盘为铜盘,所述铜盘中铜和金刚石粉的质量比为1:0.002~0.003;所述研磨机在研磨时需持续滴入研磨液,同时在研磨过程中对超薄陶瓷基片半成品施加2~3kg的配重。
进一步,所述研磨液为以二氧化硅配纯净水按1:180~220的重量比混合作为基础磨液,再添加铝粉和砖石粉的二氧化硅研磨液,所述铝粉和砖石粉按3~5g/公斤磨液的配比加入。
进一步,还包括步骤7:将去离子水、酒精、丙酮中的一种或几种溶液混合均匀,对抛光后的成品进行超声波清洗。
采用上述方案后,本发明的有益效果在于:
本发明采用氧化锆(Zr(Hf)O2)为主要原料来加工陶瓷基片,烧结成的结构陶瓷半成品硬度高、密度大、结构紧凑,具有良好的抗弯曲性和耐磨性,不容易损坏和变形,以至于在线切时不容易断裂,所以可采用陶瓷基片切割机来线切结构陶瓷半成品,采用线切的方式可将结构陶瓷半成品切割至厚度0.08~0.3mm为超薄陶瓷基片半成品,线切后的超薄陶瓷基片半成品的厚度极薄,后续进行一次研磨就可得到超薄的陶瓷基片,简化了生产工艺,并且线切后得到的超薄陶瓷基片半成品的硬度也高,在研磨成型为超薄陶瓷基片时不容易碎裂,进一步保证成品率,而且研磨后制成的超薄陶瓷基片厚度可达到0.05mm,相较于现有技术来说更加轻薄;此外,本发明的原料中还含有三氧化二钇(Y2O3),三氧化二钇可作为烧结助剂,可降低烧结温度和缩短保温时间,进一步简化生产工艺。综上,本发明加工时间短,成品率高,优化了生产工艺。
附图说明
图1为本发明的工艺流程图;
图2为本发明制成超薄陶瓷基片的结构示意图。
标号说明:
1、结构陶瓷半成品;2、超薄陶瓷基片半成品;3、超薄陶瓷基片。
具体实施方式
以下结合附图及具体实施例对本发明做详细的说明。
如图1-2所示,本发明提供一种超薄陶瓷基片的加工方法,组成所述陶瓷基片的组分及其按质量百分比的含量为:Zr(Hf)O2:≥94%,Y2O3:5.25±0.25%,Al2O3:0.25±0.02%,Fe2O3:<0.005%,SiO2:<0.02%,TiO2:<0.005%,Na2O:<0.005%,Cl-:<0.05%,H2O:<1%;
所述加工方法以下包括步骤:
步骤1:首先将上述原料组分按照重量比混合成陶瓷粉料,将陶瓷粉料置于模具内,接着通过静压设备,压制出高密度的胚料;
步骤2:将步骤1得到的胚料进行烧结,得到结构陶瓷半成品1;
步骤3:采用磨床设备将步骤2得到的结构陶瓷半成品1的表面磨平;
步骤4:将步骤3磨平后得到的结构陶瓷半成品1通过陶瓷基片切割机进行线切,得到厚度在0.08~0.3mm之间的超薄陶瓷基片半成品2;
步骤5:将步骤4得到的超薄陶瓷基片半成品2置于工装中通过研磨机进行研磨,得到厚度在0.05~0.15mm之间的超薄陶瓷基片3;
步骤6:将步骤5研磨后得到的超薄陶瓷基片3通过抛光机进行抛光,抛光至表面无划痕,得到成品;
步骤7:将去离子水、酒精、丙酮中的一种或几种溶液混合均匀,对抛光后的成品进行超声波清洗。
本发明采用氧化锆(Zr(Hf)O2)为主要原料来加工陶瓷基片,使烧结成的结构陶瓷半成品1硬度高、密度大、结构紧凑,具有良好的抗弯曲性和耐磨性,不容易损坏和变形,以至于在线切时不容易断裂,所以可采用线切的方式来切割结构陶瓷半成品1,具体可采用陶瓷基片切割机来切割结构陶瓷半成品1,所述陶瓷基片切割机优选公开号为CN107650281B的专利公开的一种可实现摇摆切割的多线切割机,切割效率和切割稳定性高、断线率低,安全性和可靠性高。如图2所示,采用线切的方式可将结构陶瓷半成品1切割至厚度为0.08~0.3mm的多个超薄陶瓷基片半成品2,线切后的超薄陶瓷基片半成品2的厚度极薄,已经达到现有技术流延工艺最终制成的陶瓷基片的厚度,甚至更薄,后续进行一次研磨就最终的超薄陶瓷基片3,研磨后制成的超薄陶瓷基片3厚度最薄可达到0.05mm,是流延工艺达不到的,并且线切后得到的超薄陶瓷基片半成品2的硬度也高,在研磨成型为超薄陶瓷基片3时不容易碎裂,进一步保证成品率,综上,本发明不仅缩短了加工时间和提高了成品率,还制成了比现有技术更加薄的超薄陶瓷基片3,因此,本发明优化了生产工艺。
在步骤2中,共有三个烧结阶段:第一阶段的烧结温度为140~150℃,优选150℃,保温时间为5min,该阶段的烧结温度较低、保温时间较短,主要起到预热的作用,且压制出的坯料内存在一定量的水分(H2O),该阶段可将坯料内的水分蒸发,避免在后续的烧结过程中,水分渗入原料组分内,使烧结完成的结构陶瓷半成品1产生裂纹或表面出现气泡;第二阶段的烧结温度为1100~1200℃,优选1100℃,保温时间为1h,该阶段将坯料初步烧结成型;第三阶段的烧结温度为1400~1450℃,优选1440℃,保温时间为3h,该阶段为主要烧结阶段,通过1440℃的高温将坯料完全烧结成型为结构陶瓷半成品1,在该阶段中,烧结密度可达到5.8~6.2g/cm3之间,烧结密度大,得到的结构陶瓷半成品1的机械强度和耐高温性高,抗弯强度达到1200~1300MPa,抗弯强度高,在后续的线切和研磨步骤中,结构陶瓷半成品1不容易被切割断裂或被研磨碎裂,保证了成品率。此外,本发明的原料组分中还含有三氧化二钇(Y2O3),三氧化二钇的含量仅次于氧化锆,可作为烧结助剂使用,从而降低烧结温度和缩短保温时间,无需将烧结温度达到1500℃以上,进一步简化了生产工艺。
在步骤3中,烧结完成的结构陶瓷半成品1并非规整的立方体结构,如图2所示,所以需要将进行磨平,可采用全自动平面磨床将结构陶瓷半成品1的表面磨平。
在步骤5中,所述研磨机的底盘优选为为铜盘,所述铜盘中铜和金刚石粉的质量比为1:0.002~0.003,所述铜和金刚石粉具有辅助研磨的作用;所述研磨机在研磨时需持续滴入研磨液,所述研磨在研磨过程中具有缓冲和润滑的作用,所述研磨液可为以二氧化硅配纯净水按1:180~220的重量比混合作为基础磨液,再添加铝粉和砖石粉的二氧化硅研磨液,所述铝粉和砖石粉按3~5g/公斤磨液的配比加入,所述铝粉和砖石粉同样具有辅助研磨的作用。此外,在研磨过程中需要对超薄陶瓷基片半成品2施加2~3kg的配重,由于超薄陶瓷基片半成品2的厚度较薄,所以配重不能太中,以防止超薄陶瓷基片半成品2被压裂。
以上所述仅为本发明的较佳实施例,并非对本案设计的限制,凡依本案的设计关键所做的等同变化,均落入本案的保护范围。

Claims (5)

1.一种超薄陶瓷基片的加工方法,其特征在于:组成所述陶瓷基片的组分及其按质量百分比的含量为:Zr(Hf)O2:≥94%,Y2O3:5.25±0.25%,Al2O3:0.25±0.02%,Fe2O3:<0.005%,SiO2:<0.02%,TiO2:<0.005%,Na2O:<0.005%,Cl-:<0.05%,H2O:<1%;
所述加工方法以下包括步骤:
步骤1:首先将上述原料组分按照重量比混合成陶瓷粉料,将陶瓷粉料置于模具内,接着通过静压设备,压制出高密度的胚料;
步骤2:将步骤1得到的胚料进行烧结,得到结构陶瓷半成品;
步骤3:采用磨床设备将步骤2得到的结构陶瓷半成品的表面磨平;
步骤4:将步骤3磨平后得到的结构陶瓷半成品通过陶瓷基片切割机进行线切,得到厚度在0.08~0.3mm之间的超薄陶瓷基片半成品;
步骤5:将步骤4得到的超薄陶瓷基片半成品置于工装中通过研磨机进行研磨,得到厚度在0.05~0.15mm之间的超薄陶瓷基片;
步骤6:将步骤5研磨后得到的超薄陶瓷基片通过抛光机进行抛光,抛光至表面无划痕,得到成品。
2.如权利要求1所述的一种超薄陶瓷基片的加工方法,其特征在于:所述步骤2中,具有三个烧结阶段:第一阶段的烧结温度为140~150℃,保温时间为5min;第二阶段的烧结温度为1100~1200℃,保温时间为1h;第三阶段的烧结温度为1400~1450℃,保温时间为3h。
3.如权利要求1所述的一种超薄陶瓷基片的加工方法,其特征在于:所述步骤5中的研磨机的底盘为铜盘,所述铜盘中铜和金刚石粉的质量比为1:0.002~0.003;所述研磨机在研磨时需持续滴入研磨液,同时在研磨过程中对超薄陶瓷基片半成品施加2~3kg的配重。
4.如权利要求3所述的一种超薄陶瓷基片的加工方法,其特征在于:所述研磨液为以二氧化硅配纯净水按1:180~220的重量比混合作为基础磨液,再添加铝粉和砖石粉的二氧化硅研磨液,所述铝粉和砖石粉按3~5g/公斤磨液的配比加入。
5.如权利要求1所述的一种超薄陶瓷基片的加工方法,其特征在于:还包括步骤7:将去离子水、酒精、丙酮中的一种或几种溶液混合均匀,对抛光后的成品进行超声波清洗。
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