CN116325104A - Semiconductor test apparatus and semiconductor test method - Google Patents
Semiconductor test apparatus and semiconductor test method Download PDFInfo
- Publication number
- CN116325104A CN116325104A CN202180066270.0A CN202180066270A CN116325104A CN 116325104 A CN116325104 A CN 116325104A CN 202180066270 A CN202180066270 A CN 202180066270A CN 116325104 A CN116325104 A CN 116325104A
- Authority
- CN
- China
- Prior art keywords
- constant current
- electrode
- semiconductor
- current source
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The test stage (51) fixes a wafer (63) on which a plurality of semiconductor elements (26, 27) are arranged, and has a function of a positive electrode electrically connected to the positive electrodes of the plurality of semiconductor elements (26, 27). The constant current sources (1, 2) supply constant current to the test stage (51). The 1 st probe (53) connects the negative electrode of the semiconductor element (27) with the negative electrode (42) of the constant current source. The electrodes (31, 32) are arranged on the outer periphery of the test stage (51), are connected to 1 constant current source out of the constant current sources (1, 2), and function as 2 current supply points. The collector electrode sensing terminal (33) is arranged on the outer periphery of the test stage (51). A voltmeter (3) measures the voltage between the collector sense terminal (33) and the negative electrode (42) of the constant current source.
Description
Technical Field
The present disclosure relates to a semiconductor test apparatus and a semiconductor test method.
Background
The product performance of the semiconductor element is ensured by performing a characteristic test in a test process in the manufacturing process. The characteristic test includes a characteristic test and screening in which a high voltage or a large current is applied to a semiconductor element.
The characteristic test includes a test performed in a state of a module, a test performed in a state of a semiconductor element, and the like. In order to reduce the manufacturing cost, the characteristic test is preferably performed in a wafer state. However, there are the following problems: the reproducibility of the measurement result is low due to the difference between the resistance that varies according to the contact condition of the test stage on which the wafer is placed and the back surface of the wafer and the resistance of the path from the test stage to the measurement point.
In patent document 1, the density of the adsorption holes provided in the test stage is set to 100 holes/cm 2 As described above, the contact resistance between the test stage and the wafer back electrode can be reduced. This can reduce the problem of low reproducibility of measurement.
Prior art literature
Patent literature
Patent document 1: japanese patent application laid-open No. 2015-26765
Disclosure of Invention
Problems to be solved by the invention
However, in the test method described in patent document 1, since the influence of the difference in resistance of the path from the test stage to the measurement point cannot be eliminated, there is a problem that the measurement error varies in the plane of the wafer.
Accordingly, an object of the present disclosure is to provide a semiconductor test apparatus and a semiconductor test method capable of reducing variation in measurement errors in the plane of a wafer in a test performed in a wafer state of a semiconductor element.
Means for solving the problems
The semiconductor test device of the present disclosure is for performing a characteristic test of a semiconductor element having a positive electrode on a back surface and a negative electrode and a control electrode on a front surface, and being turned on or off in accordance with a control signal input to the control electrode, and includes: a test stage for fixing a wafer on which a plurality of semiconductor devices are arranged, the test stage having a function of a positive electrode electrically connected to positive electrodes of the plurality of semiconductor devices; n constant current sources, N is a natural number above 2; a 1 st probe that connects a negative electrode of the semiconductor element with a negative electrode of the constant current source; n electrodes arranged on the outer periphery of the test stage, connected to 1 constant current source out of the N constant current sources, and functioning as N current supply points; a collector electrode sensing terminal arranged on the outer periphery of the test stage; and a voltmeter that measures a voltage between the collector sense terminal and the negative electrode of the constant current source.
The semiconductor test device of the present disclosure is for performing a characteristic test of a semiconductor element having a positive electrode on a back surface and a negative electrode and a control electrode on a front surface, and being turned on or off in accordance with a control signal input to the control electrode, and includes: a test stage for fixing a wafer on which a plurality of semiconductor devices are arranged, the test stage having a function of a positive electrode electrically connected to positive electrodes of the plurality of semiconductor devices; a constant current source; a 1 st probe that connects a negative electrode of the semiconductor element with a negative electrode of the constant current source; n electrodes arranged on the outer periphery of the test stage, connected to the constant current source, and functioning as current supply points, wherein N is a natural number of 2 or more; a variable resistor and a ammeter arranged between the constant current source and each of the N electrodes; a collector electrode sensing terminal arranged on the outer periphery of the test stage; and a voltmeter that measures a voltage between the collector sense terminal and the negative electrode of the constant current source.
The semiconductor test method of the present disclosure is a semiconductor test method for a semiconductor test apparatus for performing a characteristic test of a semiconductor element having a positive electrode on a back surface and a negative electrode and a control electrode on a front surface, and being turned on or off in accordance with a control signal input to the control electrode. The semiconductor test device includes: the test carrier has the function of an anode; n constant current sources, N is a natural number above 2; n electrodes arranged on the outer periphery of the test stage, connected to 1 constant current source out of the N constant current sources, and functioning as N current supply points; a collector electrode sensing terminal arranged on the outer periphery of the test stage; probe 1; probe 2; a voltmeter. The semiconductor test method comprises the following steps: fixing a wafer provided with a plurality of semiconductor elements on a test stage, and connecting the anodes of the plurality of semiconductor elements with the test stage; connecting the negative electrode of the semiconductor element with the negative electrode of the constant current source through the 1 st probe; connecting the control electrode of the semiconductor element with a driving circuit through a 2 nd probe; n constant current sources start to supply constant current; and measuring a voltage between the collector sensing terminal and the negative electrode of the constant current source by a voltmeter.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present disclosure, in a test performed in a wafer state of a semiconductor device, variation in measurement errors in the surface of the wafer can be reduced.
Drawings
Fig. 1 is a diagram showing the structure of a semiconductor test apparatus according to embodiment 1.
Fig. 2 is a diagram illustrating a path for measuring the saturation voltage of the semiconductor element 27 in embodiment 1.
Fig. 3 is a diagram illustrating a path for measuring the saturation voltage of the semiconductor element 26 in embodiment 1.
Fig. 4 is a flowchart showing a procedure of a saturation voltage test of the semiconductor element in embodiment 1.
Fig. 5 is a diagram showing an example of the semiconductor test apparatus according to embodiment 2.
Fig. 6 is a diagram showing the structure of the semiconductor test apparatus according to embodiment 3.
Fig. 7 is a flowchart showing a procedure of a saturation voltage test of the semiconductor element in embodiment 3.
Fig. 8 is a diagram showing the structure of the semiconductor test apparatus according to embodiment 4.
Fig. 9 is a diagram illustrating a path for measuring the saturation voltage of the semiconductor element 27 in embodiment 4.
Fig. 10 is a diagram illustrating a path for measuring the saturation voltage of the semiconductor element 26 in embodiment 4.
Fig. 11 is a flowchart showing a measurement procedure of saturation voltage measurement according to embodiment 4.
Fig. 12 is a diagram showing an example of the semiconductor test apparatus according to embodiment 5.
Fig. 13 is a diagram showing the structure of the semiconductor test apparatus according to embodiment 6.
Fig. 14 is a flowchart showing a procedure of a saturation voltage test of the semiconductor element in embodiment 6.
Fig. 15 is a diagram showing the structure of the semiconductor test apparatus according to embodiment 7.
Fig. 16 is a flowchart showing a procedure of a saturation voltage test of the semiconductor element in embodiment 7.
Detailed Description
Hereinafter, embodiments will be described in detail with reference to the drawings. In the following, the same or corresponding parts in the drawings are denoted by the same reference numerals, and the description thereof will not be repeated in principle.
Fig. 1 is a diagram showing the structure of a semiconductor test apparatus according to embodiment 1. A typical large-current test will be described with respect to a test of a collector-emitter saturation voltage (hereinafter referred to as a saturation voltage).
Referring to fig. 1, the semiconductor test apparatus includes a test stage 51, a 1 st probe 53, a 2 nd probe 54, a driving circuit 55, a 1 st constant current source 1, a 2 nd constant current source 2, a 1 st electrode 31, a 2 nd electrode 32, a collector electrode sense terminal 33, and a negative electrode 42 of the constant current source.
The test stage 51 holds a wafer 63. A plurality of semiconductor elements are arranged on the wafer 63. As the semiconductor element, any semiconductor element that is self-extinguishing can be used. All or a part of the semiconductor devices arranged on the wafer 63 are extracted and inspected. The semiconductor element 27 and the semiconductor element 26 represent a plurality of semiconductor elements arranged.
The semiconductor elements 26 and 27 have a positive electrode on the back surface and a negative electrode and a control electrode on the front surface. The semiconductor elements 26 and 27 are turned on or off according to the 1 st control signal input from the drive circuit 55 to the control electrode. For example, when the semiconductor elements 26 and 27 are MOSFETs (Metal Oxide Semiconductor Field Effect Transistor: metal oxide semiconductor field effect transistors), the positive electrode means a drain electrode, the negative electrode means a source electrode, and the control electrode means a gate electrode. When the semiconductor elements 26 and 27 are IGBTs (Insulated Gate Transistor: insulated gate transistors), the positive electrode means a collector, the negative electrode means an emitter, and the control electrode means a gate. Negative electrodes and control electrodes are arranged on the front surfaces of the semiconductor elements 26, 27, and positive electrodes are arranged on the rear surfaces.
In the semiconductor elements 26 and 27, a current flows from the positive electrode on the back side to the negative electrode on the front side. In order to perform such a characteristic test of the semiconductor elements 26 and 27 in the state of the wafer 63, the negative electrode (emitter in the case of IGBT) on the front surface of the semiconductor element 26 and 27 and the negative electrode 42 of the constant current source are electrically connected by the 1 st probe 53 in the shape of a needle. The control electrodes (gate electrodes in the case of IGBT) on the front surfaces of the semiconductor elements 26 and 27 are electrically connected to the drive circuit 55 of the semiconductor test device via the needle-shaped 2 nd probe 54. Fig. 1 shows a state in which the 1 st probe 53 and the 2 nd probe 54 are connected to the semiconductor element 27 when the subject is the semiconductor element 27.
The positive electrode (collector in the case of IGBT) on the back surface of the semiconductor element 26, 27 is directly electrically connected to the test stand 51 (conductor) having a positive electrode function.
The 1 st constant current source 1 and the 2 nd constant current source 2 supply a fixed current.
The 1 st electrode 31 is disposed on the outer periphery of the test stage 51. The 1 st electrode 31 is connected to the 1 st constant current source 1. The 1 st electrode 31 functions as a 1 st current supply point for supplying current to the test stage 51. The 2 nd electrode 32 is disposed on the outer periphery of the test stage 51. The 2 nd electrode 32 is connected to the 2 nd constant current source 2. The 1 st electrode 31 and the 2 nd electrode 32 are electrically connected to the positive electrodes on the back surfaces of the semiconductor elements 26 and 27.
The on-resistance (equivalent resistance) of the semiconductor element 27 in the saturation voltage test is shown by the resistor 17, and the on-resistance (equivalent resistance) of the semiconductor element 26 is shown by the resistor 16.
The 1 st constant current source 1 is electrically connected to the negative electrode 42 of the constant current source via the resistor 10, the 1 st electrode 31, the resistor 13, and the semiconductor element 27 via the 1 st probe 53. The 1 st constant current source 1 is electrically connected to the negative electrode 42 of the constant current source via the resistor 10, the 1 st electrode 31, the resistor 12, and the semiconductor element 26 by the 1 st probe 53.
The resistor 10 is a resistor of an electric wiring between the 1 st constant current source 1 and the 1 st electrode 31.
The resistor 13 is a sum of a resistance component of a path of a current flowing through the test stage 51 when the 1 st constant current source 1 supplies power to the semiconductor element 27 and a contact resistance of the test stage 51 and a positive electrode on the rear surface of the semiconductor element 27. When the resistance component of the test bed 51 is uniform, a current flows through the shortest distance between the 1 st electrode 31 and the semiconductor element 27. For example, when the test stage 51 has a flaw or the like, the current may not flow through the shortest path. The same applies to the resistive component from the other electrode to the semiconductor element.
The resistor 12 is a sum of a resistance component of a path of a current flowing through the test stage 51 when the 1 st constant current source 1 supplies power to the semiconductor element 26 and a contact resistance of the test stage 51 and a positive electrode on the rear surface of the semiconductor element 26.
The 1 st probe 53 electrically connects the 2 nd constant current source 2 to the negative electrode 42 of the constant current source via the resistor 11, the 2 nd electrode 32, the resistor 14, and the semiconductor element 27. The 1 st probe 53 connects the 2 nd constant current source 2 to the negative electrode 42 of the constant current source via the resistor 11, the 2 nd electrode 32, the resistor 15, and the semiconductor element 26.
The resistor 11 is a resistor of an electric wiring between the 2 nd constant current source 2 and the 2 nd electrode 32.
The resistor 14 is a sum of a resistance component of a path of a current flowing through the test stage 51 when the power is supplied from the 2 nd constant current source 2 to the semiconductor element 27, and a contact resistance of the test stage 51 and a positive electrode on the rear surface of the semiconductor element 27.
The resistor 15 is a sum of a resistance component of a path of a current flowing through the test stage 51 when the power is supplied from the 2 nd constant current source 2 to the semiconductor element 26, and a contact resistance of the test stage 51 and the positive electrode on the rear surface of the semiconductor element 26.
The positive electrode (emitter in the case of an IGBT) of the semiconductor element 27 and the negative electrode 42 of the constant current source are connected by the 1 st probe 53, whereby the semiconductor element 27 and the negative electrode 42 of the constant current source are electrically connected. The negative electrode (emitter in the case of IGBT) on the front surface of the semiconductor element 26 is connected to the 1 st probe 53, and the semiconductor element 26 is electrically connected to the negative electrode 42 of the constant current source.
The equivalent resistance when the saturation voltage of the semiconductor element 27 is measured is the resistor 17. The equivalent resistance when the saturation voltage of the semiconductor element 26 is measured is the resistor 16. For example, when the sum of the current of the 1 st constant current source 1 and the current of the 2 nd constant current source 2 is 500A and the saturation voltage of the semiconductor element 27 is 1V, the resistance 17 is 0.002 Ω.
The collector sensing terminal 33 is disposed on the outer periphery of the test stage 51. The collector electrode sensing terminal 33 is disposed closer to the 1 st electrode 31 than the 2 nd electrode 32. The collector sense terminal 33 is electrically connected to the positive electrode of the back surface of the semiconductor element 26, 27.
The voltmeter 3 measures the voltage between the collector sense terminal 33 and the negative electrode 42 of the constant current source. The 1 st constant current source 1, the 2 nd constant current source 2, and the voltmeter 3 allow the saturation voltage of the semiconductor element 27 to be measured at the 4 terminal. Since only a minute current flows between the collector sense terminal 33 and the 1 st electrode 31 and the resistance is also small at the 2 nd point between the conductors, the collector sense terminal 33 and the 1 st electrode 31 can be regarded as equal potentials.
By arbitrarily moving the test stage 51, the 1 st probe 53 and the 2 nd probe 54 having a needle shape can be electrically contacted with an arbitrary semiconductor element of the wafer 63.
When the saturation voltage of the semiconductor element 27 is measured, the drive circuit 55 applies a voltage to the control electrode of the semiconductor element 27 through the 2 nd probe 54, thereby bringing the semiconductor element 27 into an on state. The saturation voltage of the semiconductor element 27 can be measured by bringing the 1 st probe 53 into contact with the negative electrode on the front surface of the semiconductor element 27 and measuring the voltage between the collector sense terminal 33 and the negative electrode 42 of the constant current source.
When the saturation voltage of the semiconductor element 26 is measured, the drive circuit 55 applies a voltage to the control electrode of the semiconductor element 26 through the 2 nd probe 54, thereby bringing the semiconductor element 26 into an on state. The saturation voltage of the semiconductor element 26 can be measured by bringing the 1 st probe 53 into contact with the negative electrode on the front surface of the semiconductor element 26 and measuring the voltage between the collector sense terminal 33 and the negative electrode 42 of the constant current source.
Although it is assumed that there is no voltage drop in the path from the semiconductor element 27 to the negative electrode 42 of the constant current source, in reality, the 1 st probe 53 in the needle shape and the wiring have a resistive component, and therefore, the voltmeter 3 may measure the voltage between the vicinity of the tip of the needle of the 1 st probe 53 and the collector sense terminal 33 instead of measuring the voltage between the collector sense terminal 33 and the negative electrode 42 of the constant current source.
The 1 st electrode 31 and the 2 nd electrode 32 are preferably located at positions point-symmetrical with respect to the center of the test stage 51. When the resistance of the test bed 51 is uniform, the size of the resistors 12, 13, 14, 15 is proportional to the distance from the electrode to the semiconductor element, regardless of the contact resistance between the positive electrode on the back surface of the semiconductor element and the test bed 51. If the 1 st electrode 31 and the 2 nd electrode 32 are arranged at positions point-symmetrical with respect to the center of the test stage 51, the value of the resistor 13 and the value of the resistor 15 become the same, and the value of the resistor 14 and the value of the resistor 12 become the same, in the case where the semiconductor element 26 and the semiconductor element 27 are located at positions point-symmetrical with respect to the center of the test stage 51, and therefore the saturation voltage of the semiconductor element 26 and the saturation voltage of the semiconductor element 27 become the same. However, even if not point-symmetrical, the variation in the saturation voltage measurement error of the resistor 13 or the like in the plane of the wafer 63 due to the semiconductor test apparatus can be reduced.
Fig. 2 is a diagram illustrating a path for measuring the saturation voltage of the semiconductor element 27 in embodiment 1. Fig. 3 is a diagram illustrating a path for measuring the saturation voltage of the semiconductor element 26 in embodiment 1.
A method of calculating a measurement value of a saturation voltage (also referred to as Vce (sat)) which is a normal high-current test will be described with reference to fig. 2 and 3. Since the calculation based on the variables becomes cumbersome, real numbers are substituted into the resistance values here. Hereinafter, the semiconductor elements 26 and 27 of the subject will be described as IGBTs.
The positional relationship between the semiconductor element 27 and the 1 st electrode 31 and the positional relationship between the semiconductor element 26 and the 2 nd electrode 32 are set to be point-symmetrical with respect to the center point of the test stage 51. The saturation voltage of the semiconductor element 26 is set to be the same as that of the semiconductor element 27. Let resistor 10 be 0.05 Ω, resistor 11 be 0.10 Ω, resistor 12 be 0.02 Ω, resistor 13 be 0.01 Ω, resistor 14 be 0.02 Ω, resistor 15 be 0.01 Ω, resistor 16 be 0.007 Ω, and resistor 17 be 0.007 Ω.
The collector-emitter voltage of the semiconductor element 27 when a fixed voltage of, for example, 15V is applied to the gate of the semiconductor element 27 to turn on the semiconductor element 27, for example, when a large current of, for example, 300A flows through the collector of the semiconductor element 27 is the saturation voltage of the semiconductor element 27. However, it is difficult to directly measure the voltage between the collector electrode and the emitter electrode of the semiconductor element 27, and therefore, in a normal saturation voltage test, the voltage between the collector sense terminal 33 and the negative electrode 42 of the constant current source is measured, and this voltage is referred to as the saturation voltage of the semiconductor element 27. The saturation voltage is a value including a voltage drop of the resistor 13.
In the conventional normal saturation voltage test, the number of constant current sources is 1, and the number of current supply points is 1 or 2. When the number of current supply points is 1, the resistance of the test stage 51 increases as the semiconductor element is located away from the current supply point, and therefore the measured saturation voltage is higher than the true value. Therefore, when the number of supply points of the current is 1, variation in the saturation voltage of the semiconductor element occurs in the plane of the wafer 63 due to measurement errors. When the number of current supply points is 2, since the current is supplied from 1 constant current source through the current paths divided into 2, if the sum of the wiring resistance and the resistance of the test stand is not equal in the 2 current paths, the current becomes unbalanced. However, since the resistance of the test stage varies depending on the position of the semiconductor element, it is difficult to equalize the resistances of the 2 current paths.
In the present embodiment, for example, 150A, which is half of the desired current (300A in this case), is fixedly supplied to the 1 st electrode 31 by the 1 st constant current source 1 and the 2 nd constant current source 2, and therefore, the measurement error by the resistor 13 can be set to 1/2. As a result, the variation in the saturation voltage of the semiconductor element due to the current in the plane of the wafer 63 can be reduced.
In the case of the resistance value shown in fig. 2, the saturation voltage of the semiconductor element 27 was 3.6V in the case where the current flowing to the collector of the semiconductor element was 300A. In the case of the resistance value shown in fig. 3, the saturation voltage of the semiconductor element 26 is 5.1V. In fig. 2 and 3, the difference between the saturation voltage of the semiconductor element 26 and the saturation voltage of the semiconductor element 27 is improved by 6% compared to the case where the constant current source is 1.
Fig. 4 is a flowchart showing a procedure of a saturation voltage test of the semiconductor element in embodiment 1.
In step S02, the semiconductor test device is connected to the semiconductor element of the subject. For example, in the case where the subject is a semiconductor element 27 which is an IGBT, the emitter on the front surface of the semiconductor element 27 is electrically connected to the negative electrode 42 of the constant current source through the needle-shaped 1 st probe 53, the gate on the front surface of the semiconductor element 27 is electrically connected to the driving circuit 55 of the semiconductor test device through the needle-shaped 2 nd probe 54, and the collector on the back surface of the semiconductor element 27 is directly electrically connected to the test stage 51 (conductor) having a positive electrode function.
In step S03, the driving circuit 55 turns on the semiconductor element of the subject.
In step S04, supply of current from the semiconductor test apparatus is started. That is, the 1 st constant current source 1 and the 2 nd constant current source 2 output currents of the same magnitude (150A).
In step S05, the voltmeter 3 measures the saturation voltage of the semiconductor element of the subject by measuring the voltage between the collector sense terminal 33 and the negative electrode 42 of the constant current source. If the measured saturation voltage is within the standard, the process advances to S06. If the measured saturation voltage is outside the standard, the process advances to step S07.
In step S06, the semiconductor element of the subject is determined to be acceptable.
In step S07, the semiconductor element of the subject is determined to be failed. In the case of failure, for example, the semiconductor element of the subject may be marked with ink. Pass or fail may also be recorded electronically.
After steps S06 and S07, the process advances to step S08.
In step S08, the supply of current from the semiconductor test apparatus is stopped. That is, the output of the current from the 1 st constant current source 1 and the 2 nd constant current source 2 is stopped. The driving circuit 55 turns off the semiconductor element of the subject.
In step S09, the connection between the semiconductor test apparatus and the semiconductor element of the subject is released.
In step S10, the test stage 51 moves to the measurement position of the next semiconductor element. The processing of steps S01 to S10 is repeated until all semiconductor devices on the wafer 63 are measured. Alternatively, in the case of the extraction test, only the semiconductor element at a predetermined position is measured.
As described above, according to the semiconductor test apparatus and the semiconductor test method of embodiment 1, the variation of the measurement error in the plane of the wafer 63 in the large current test such as the saturation voltage measurement of the semiconductor element can be reduced by fixing the current flowing through the 1 st electrode 31.
Although the actual value of the saturation voltage of the semiconductor element 27 is equal to the voltage across the resistor 17, it is difficult to directly measure the potential between the collector electrode and the emitter electrode of the semiconductor element 27, and therefore, in embodiment 1, the voltage between the collector sense terminal 33 and the negative electrode 42 of the constant current source is measured, and this voltage is set as the saturation voltage of the semiconductor element 27.
The saturation voltage of the semiconductor element 27 is deviated from the true value by the resistance component of the path from the resistor 17 to the negative electrode 42 of the constant current source, and only the resistance component can be reduced in order to reduce the deviation. In embodiment 1, the current flowing to the 1 st electrode 31 is 1/2 by setting the number of supply points of the constant current source and the current to 2. This can reduce the voltage drop by the resistor 13 to 1/2.
In the present embodiment, N constant current sources and N current supply points are provided. N is a natural number of 3 or more. The N electrodes are arranged at equal angular intervals on the outer periphery of the test stage 51. The N electrodes are connected to 1 constant current source out of the N constant current sources, respectively, and function as N current supply points.
Fig. 5 is a diagram showing an example of the semiconductor test apparatus according to embodiment 2. Fig. 5 shows a case where n=4. The semiconductor test device according to embodiment 1 further includes a 3 rd constant current source 101, a 4 th constant current source 102, a 3 rd electrode 131, and a 4 th electrode 132 in addition to the structure of the semiconductor test device. The resistor 110 is a resistor of an electric wiring between the 3 rd constant current source 101 and the 3 rd electrode 131. The resistor 111 is a resistor of an electric wiring between the 4 th constant current source 102 and the 4 th electrode 132. The illustration of the resistance component in the test stage 51 is omitted.
The 1 st electrode 31 is connected to the 1 st constant current source 1. The 2 nd electrode 32 is connected to the 2 nd constant current source 2. The 3 rd electrode 131 is connected to the 3 rd constant current source 101. The 4 th electrode 132 is connected to the 4 th constant current source 102. The 1 st electrode 31, the 3 rd electrode 131, the 2 nd electrode 32, and the 4 th electrode 132 are arranged on the outer periphery of the test stage 51 at intervals of 90 °.
According to the present embodiment, the current flowing to the 1 st electrode 31 becomes 1/N, and therefore, the voltage drop by the resistor 13 is reduced to 1/N. Therefore, the deviation of the saturation voltage from the true value due to the resistor 13 can be reduced to 1/N. As a result, the measurement error by the resistor 13 can be set to 1/N.
Fig. 6 is a diagram showing the structure of the semiconductor test apparatus according to embodiment 3. The semiconductor test device according to embodiment 3 is different from the semiconductor test device according to embodiment 1 in that the semiconductor test device according to embodiment 3 includes only 1 constant current source 1, and further includes a 1 st variable resistor 71, a 2 nd variable resistor 72, a 1 st ammeter 81, and a 2 nd ammeter 82.
The 1 st variable resistor 71 and the 1 st ammeter 81 connected in series are arranged between the constant current source 1 and the 1 st electrode 31. The 2 nd variable resistor 72 and the 2 nd ammeter 82 connected in series are arranged between the constant current source 1 and the 2 nd electrode 32.
The 1 st ammeter 81 measures the current flowing to the 1 st variable resistor 71. The 2 nd ammeter 82 measures the current flowing through the 2 nd variable resistor 72. Instead of the 1 st ammeter 81 and the 2 nd ammeter 82, an oscilloscope may be used to measure the transient voltage of the current transformer.
Fig. 7 is a flowchart showing a procedure of a saturation voltage test of the semiconductor element in embodiment 3.
The flowchart of embodiment 3 differs from the flowchart of embodiment 2 in that the flowchart of embodiment 3 includes a step S04a between step S04 and step S05.
In step S04a, the magnitude of the current flowing to the 1 st variable resistor 71 is measured by the 1 st ammeter 81. The magnitude of the current flowing to the 2 nd variable resistor 72 is measured by the 2 nd ammeter 82, and the resistance values of the 1 st variable resistor 71 and the 2 nd variable resistor 72 are adjusted so that the 1 st ammeter 81 and the 2 nd ammeter 82 have the same value. This makes it possible to equalize the magnitude of the current flowing in the 1 st electrode 31 with the magnitude of the current flowing in the 2 nd electrode 32.
In the present embodiment, by equalizing the magnitudes of the current flowing to the 1 st electrode 31 and the current flowing to the 2 nd electrode 32, the variation in measurement error in the plane of the wafer 63 in the large current test such as the saturation voltage measurement can be reduced.
Modification of embodiment 3.
In embodiment 3, the magnitude of the resistance component between the semiconductor element of the subject and the 1 st electrode 31 and the resistance component between the semiconductor element of the subject and the 2 nd electrode 32 are obtained in advance. For example, a wafer such as a TEG (Test Element Group: test element group) wafer is fabricated, and the voltage drop in the wafer is distributed in an in-plane manner with a known resistance value. Since the current value and the resistance value of the semiconductor element are known, the resistance component between the semiconductor element of the subject and the 1 st electrode 31 and the resistance component between the semiconductor element of the subject and the 2 nd electrode 32 can be obtained.
The same effects as those of embodiment 3 can be obtained by adjusting the size of the 1 st variable resistor 71 and the size of the 2 nd variable resistor 72 so that the currents flowing to the 1 st electrode 31 and the 2 nd electrode 32 are always equal.
Embodiment 4.
Fig. 8 is a diagram showing the structure of the semiconductor test apparatus according to embodiment 4. The semiconductor test apparatus according to embodiment 4 is different from the semiconductor test apparatus according to embodiment 1 in that the semiconductor test apparatus according to embodiment 4 includes a voltmeter 3a and an arithmetic device 69 instead of the voltmeter 3.
The voltmeter 3a measures the voltage Vce (sat) a between the collector sense terminal 33 and the negative electrode 42 of the constant current source. At the same time, the voltmeter 3a measures the voltage Vce (sat) B between the collector sense terminal 34 and the negative electrode 42 of the constant current source.
The collector electrode sensing terminal 34 and the 2 nd electrode 32 are set to have the same potential. The saturation voltage Vce (sat) of the semiconductor element can be obtained by calculating the measured voltages Vce (sat) a and Vce (sat) B.
Fig. 9 is a diagram illustrating a path for measuring the saturation voltage of the semiconductor element 27 in embodiment 4. Fig. 10 is a diagram illustrating a path for measuring the saturation voltage of the semiconductor element 26 in embodiment 4.
A method of calculating a measurement value of saturation voltage measurement, which is a normal high-current test, will be described with reference to fig. 9 and 10. Since the calculation based on the variables becomes cumbersome, real numbers are substituted into the resistance values here. That is, let resistor 10 be 0.05Ω, resistor 11 be 0.10Ω, resistor 12 be 0.02Ω, resistor 13 be 0.01Ω, resistor 14 be 0.02Ω, resistor 15 be 0.01Ω, resistor 16 be 0.007 Ω, and resistor 17 be 0.007 Ω. They are the same values as the resistance values in fig. 2 and 3.
The resistance of the test stage 51 is uniform, and the contact resistance between the positive electrode on the back surface of the wafer 63 and the test stage 51 is uniform. When the positional relationship between the semiconductor element 27 and the 1 st electrode 31 and the positional relationship between the semiconductor element 26 and the 2 nd electrode 32 are point-symmetrical with respect to the center point of the test stage 51, as in the case of the semiconductor element 26 and the semiconductor element 27, the size of the resistor 13 is the same as the size of the resistor 14.
In the actual test apparatus, the resistance component of the test stage 51 is not uniform, and the electrical contact resistance between the positive electrode on the back surface of the wafer 63 and the test stage 51 is also not uniform. Therefore, the size of the resistor 13 and the size of the resistor 14 are different according to the position of the semiconductor device on the wafer 63. In the present embodiment, by averaging 2 measurement values Vce (sat) a and Vce (sat) B, for example, the variation between the size of resistor 13 and the size of resistor 14 can be reduced.
The calculation device 69 may change the method of obtaining the saturation voltage Vce (sat) of the semiconductor element from the measurement values Vce (sat) a and Vce (sat) B according to the position of the semiconductor element.
For example, a method of weighting based on the difference in distance between the semiconductor element and 2 electrodes may be used.
Alternatively, when the distance from the semiconductor element 27 to the 1 st electrode 31 is 1/2 of the distance from the semiconductor element 27 to the 2 nd electrode 32, the measured value Vce (sat) a is considered to have a smaller influence on the path resistance than the measured value Vce (sat) B and is close to the true value, and therefore, the calculation device 69 may set the measured value Vce (sat) a to the saturation voltage Vce (sat) of the semiconductor element 27.
Fig. 11 is a flowchart showing a measurement procedure of the saturation voltage measurement according to embodiment 4. The flowchart of embodiment 4 differs from the flowchart of embodiment 1 in that the flowchart of embodiment 4 includes a step S04b between step S04 and step S05.
In step S04b, the voltmeter 3a measures the voltage Vce (sat) a between the collector sense terminal 33 and the negative electrode 42 of the constant current source. The voltmeter 3a measures the voltage Vce (sat) B between the collector sense terminal 34 and the negative electrode 42 of the constant current source. For example, the calculation device 69 calculates (e.g., averages) these measurement values, thereby obtaining the saturation voltage Vce (sat) of the semiconductor element of the subject.
As described above, according to the semiconductor test apparatus and the semiconductor test method of embodiment 4, the current flowing through the 1 st electrode 31 and the 2 nd electrode 32 is fixed, and the saturation voltage is obtained by calculating the measurement value at 2 points, whereby the variation in the measurement error in the plane of the wafer 63 in the high-current test can be reduced.
Embodiment 5.
Although the actual value of the saturation voltage of the semiconductor element 27 is equal to the voltage across the resistor 17, it is difficult to directly measure the potential between the collector electrode and the emitter electrode of the semiconductor element 27, and therefore, in embodiment 5, the voltage between the collector sense terminal 33 having the same potential as the 1 st electrode 31 and the negative electrode 42 of the constant current source and the voltage between the collector sense terminal 34 having the same potential as the 2 nd electrode 32 and the negative electrode 42 of the constant current source are measured, and 2 measured values are calculated, and the calculation result is set as the saturation voltage of the semiconductor element 27.
The saturation voltage of the semiconductor element 27 is deviated from the true value by the resistance component of the path from the resistor 17 to the negative electrode 42 of the constant current source, but in order to reduce the deviation, only the resistance component can be reduced. In embodiment 5, the current flowing to the 1 st electrode 31 is 1/2 by setting the number of supply points of the constant current source and the current to 2. This can reduce the voltage drop by the resistor 13 to 1/2.
In the present embodiment, N constant current sources, current supply points, and collector sense terminals are provided. N is a natural number of 3 or more.
The N electrodes are arranged at equal angular intervals on the outer periphery of the test stage 51. The N electrodes are connected to 1 constant current source out of the N constant current sources, respectively, and function as N current supply points. The N collector electrode sensing terminals are respectively arranged at positions closer to the corresponding electrode of the N electrodes than to all other electrodes of the N electrodes.
Fig. 12 is a diagram showing an example of the semiconductor test apparatus according to embodiment 5. Fig. 12 shows a case where n=4. The semiconductor test device according to embodiment 4 further includes a 3 rd constant current source 101, a 4 th constant current source 102, a 3 rd electrode 131, a 4 th electrode 132, a collector sense terminal 133, and a collector sense terminal 134 in addition to the structure of the semiconductor test device. The resistor 110 is a resistor of an electric wiring between the 3 rd constant current source 101 and the 3 rd electrode 131. The resistor 111 is a resistor of an electric wiring between the 4 th constant current source 102 and the 4 th electrode 132. The illustration of the resistance component in the test stage 51 is omitted.
The 1 st electrode 31 is connected to the 1 st constant current source 1. The 2 nd electrode 32 is connected to the 2 nd constant current source 2. The 3 rd electrode 131 is connected to the 3 rd constant current source 101. The 4 th electrode 132 is connected to the 4 th constant current source 102. The 1 st electrode 31, the 3 rd electrode 131, the 2 nd electrode 32, and the 4 th electrode 132 are arranged on the outer periphery of the test stage 51 at intervals of 90 °.
The collector electrode sensing terminal 33 is disposed closer to the electrode 31 than to the electrodes 32, 131, 132. The collector electrode sensing terminal 133 is disposed closer to the electrode 131 than to the electrodes 31, 32, 132. The collector electrode sensing terminal 34 is disposed closer to the electrode 32 than to the electrodes 31, 131, 132. The collector electrode sensing terminal 134 is disposed closer to the electrode 132 than to the electrodes 31, 32, 131.
Thus, the current flowing to the 1 st electrode 31 becomes 1/N, and therefore, the voltage drop of the resistor 13 is reduced to 1/N. Therefore, the deviation of the saturation voltage from the true value due to the resistor 13 can be reduced to 1/N.
Embodiment 6.
Fig. 13 is a diagram showing the structure of the semiconductor test apparatus according to embodiment 6. The semiconductor test apparatus according to embodiment 6 is different from the semiconductor test apparatus according to embodiment 1 in that, in the semiconductor test apparatus according to embodiment 6, the 1 st electrode 31 and the 2 nd electrode 32 can be arbitrarily moved around the outer periphery of the test stage 51.
In measurement of the saturation voltage of the semiconductor element 27, the 1 st electrode 31 and the 2 nd electrode 32 are arranged at positions having the angle 91 and being equidistant from the semiconductor element 27. The angle 91 is, for example, 30 degrees. The mechanism capable of operating the 1 st electrode 31 and the 2 nd electrode 32 at will is, for example, a structure in which the movable probe is electrically contacted from the upper surface of the test stage 51.
According to the present embodiment, since the difference between the size of the resistor 13 and the size of the resistor 14 can be reduced, the deviation of the saturation voltage from the true value can be reduced without increasing the voltage measurement point. That is, the variation in measurement error in the plane of the wafer 63 can be reduced.
Fig. 14 is a flowchart showing a procedure of a saturation voltage test of the semiconductor element in embodiment 6. The flowchart of embodiment 6 differs from the flowchart of embodiment 1 in that the flowchart of embodiment 6 includes a step S01a before a step S02.
In step S01a, the 1 st electrode 31 and the 2 nd electrode 32 move to positions having the semiconductor element of the subject as the vertex and having equal distances at the angle 91.
Embodiment 7.
Fig. 15 is a diagram showing the structure of the semiconductor test apparatus according to embodiment 7. The semiconductor test device according to embodiment 7 is different from the semiconductor test device according to embodiment 1 in that in embodiment 7, the current supplied to the constant current source 1 is different from the current supplied to the constant current source 2.
In the present embodiment, the output current of the constant current source connected to the electrode closest to the collector electrode sensing terminal 33 among the N electrodes is made smaller than the output current of the other constant current sources among the N constant current sources.
As shown in fig. 15, when a current of 300A is supplied to the semiconductor elements 26 and 27 and a saturation voltage is measured, for example, the constant current source 1 connected to the electrode 31 closest to the collector sense terminal 33 outputs a current of 10A, and the constant current source 2 outputs a current of 290A. The ratio of the output current of the constant current source 1 to the output current of the constant current source 2 is not limited thereto. Since the voltage drop of the resistor 13 becomes an error of the saturation voltage, the current flowing through the resistor 13 is preferably infinitely small.
In the case where the current flowing through the resistor 13 is 10A and the wiring resistor and the resistor of the chuck shown in fig. 15, the actual value of the saturation voltage is 2.1V (=300 a×0.007 Ω), whereas the measured value is 2.2V (=300 a×0.007 Ω+10a×0.01 Ω).
Since the measured value in embodiment 1 is 3.6V, the error in embodiment 7 can be reduced as compared with embodiment 1.
Fig. 16 is a flowchart showing a procedure of a saturation voltage test of the semiconductor element in embodiment 7. The flowchart of embodiment 7 differs from the flowchart of embodiment 1 in that the flowchart of embodiment 7 includes step S04a instead of step S04.
In step S04a, supply of current from the semiconductor test apparatus is started. That is, the output current of the 1 st constant current source 1 is made smaller than the output current of the 2 nd constant current source 2. For example, the 1 st constant current source 1 outputs a current of 10A, and the 2 nd constant current source 2 outputs a current of 290A.
The present disclosure can be combined with each embodiment or modified or omitted as appropriate within the scope of the present invention.
The embodiments disclosed herein are merely examples in all respects and should not be considered as limiting embodiments. The scope of the present disclosure is indicated by the claims rather than the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are intended to be embraced therein.
Description of the reference numerals
1. 2, 101, 102 constant current source, 3a voltmeter, 10, 11, 12, 13, 14, 15, 16, 17, 110, 111 resistor, 26, 27 semiconductor element, 31, 32, 131, 132 electrode, 33, 34, 133, 134 collector sensing terminal, 42 negative electrode, 51 test bench, 53, 54 probe, 55 drive circuit, 63 wafer, 69 arithmetic device, 71, 72 variable resistor, 81, 82 ammeter.
Claims (11)
1. A semiconductor test device for testing characteristics of a semiconductor element having a positive electrode on a back surface and a negative electrode and a control electrode on a front surface, the semiconductor test device being turned on or off in response to a control signal input to the control electrode, the semiconductor test device comprising:
a test stage for fixing a wafer on which a plurality of semiconductor devices are arranged, the test stage having a function of a positive electrode electrically connected to positive electrodes of the plurality of semiconductor devices;
n constant current sources, N is a natural number above 2;
a 1 st probe that connects a negative electrode of the semiconductor element with a negative electrode of a constant current source;
n electrodes arranged on the outer periphery of the test stage, each connected to a corresponding 1 of the N constant current sources, and functioning as N current supply points;
a collector electrode sensing terminal disposed on the outer periphery of the test stage; and
and a voltmeter for measuring a voltage between the collector sense terminal and the negative electrode of the constant current source.
2. The semiconductor test device according to claim 1, wherein,
the semiconductor test device includes a 2 nd probe, and the 2 nd probe connects the control electrode of the semiconductor element with a driving circuit.
3. The semiconductor test device according to claim 1 or 2, wherein,
the N electrodes are arranged on the outer periphery of the test stage at equal angular intervals.
4. The semiconductor test device according to claim 1 or 2, wherein,
n=2, and 2 of the electrodes are configured to be movable on the outer circumference.
5. The semiconductor test device according to claim 1 or 2, wherein,
the semiconductor test device includes N collector electrode sensing terminals arranged on the outer periphery of the test stage,
the N collector sense terminals are each less distant from a corresponding one of the N electrodes than from all other ones of the N electrodes,
the voltmeter measures voltages between each of the N collector sense terminals and the negative electrode of the constant current source.
6. The semiconductor test device according to claim 5, wherein,
the semiconductor test apparatus further includes an arithmetic device that averages the N voltages measured by the voltmeter.
7. The semiconductor test device according to claim 1 or 2, wherein,
the current output from the constant current source connected to the electrode closest to the collector electrode sensing terminal among the N electrodes is smaller than the current output from the other constant current sources.
8. A semiconductor test device for performing a characteristic test of a semiconductor element having a positive electrode on a back surface and a negative electrode and a control electrode on a front surface, the semiconductor test device being turned on or off in response to a control signal input to the control electrode, the semiconductor test device comprising:
a test stage for fixing a wafer on which a plurality of semiconductor devices are arranged, the test stage having a function of a positive electrode electrically connected to positive electrodes of the plurality of semiconductor devices;
a constant current source;
a 1 st probe that connects a negative electrode of the semiconductor element with a negative electrode of a constant current source;
n electrodes arranged on the outer periphery of the test stage, connected to the constant current source, and functioning as current supply points, wherein N is a natural number of 2 or more;
a variable resistor and a ammeter disposed between the constant current source and each of the N electrodes;
a collector electrode sensing terminal disposed on the outer periphery of the test stage; and
and a voltmeter for measuring a voltage between the collector sense terminal and the negative electrode of the constant current source.
9. The semiconductor test device according to claim 8, wherein,
the resistance values of the N variable resistors are adjusted so that currents flowing between the constant current source and each of the N electrodes are equal.
10. A semiconductor test method for a semiconductor test apparatus for performing a characteristic test of a semiconductor element having a positive electrode on a back surface and a negative electrode and a control electrode on a front surface, the semiconductor element being turned on or off in accordance with a control signal input to the control electrode,
the semiconductor test device includes: the test carrier has the function of an anode; n constant current sources, N is a natural number above 2; n electrodes arranged on the outer periphery of the test stage, connected to 1 constant current source out of the N constant current sources, and functioning as N current supply points; a collector electrode sensing terminal disposed on the outer periphery of the test stage; probe 1; probe 2; the voltage of the voltage meter is measured by the voltage meter,
the semiconductor test method comprises the following steps:
fixing a wafer provided with a plurality of semiconductor elements to the test stage, and connecting positive electrodes of the semiconductor elements to the test stage;
connecting the negative electrode of the semiconductor element with the negative electrode of the constant current source through the 1 st probe;
connecting a control electrode of the semiconductor element with a driving circuit through the 2 nd probe;
the N constant current sources start to supply constant current; and
the voltage between the collector sense terminal and the negative electrode of the constant current source is measured by the voltmeter.
11. The semiconductor test method according to claim 10, wherein,
the step of starting to supply the constant current comprises the following steps: the current output from the constant current source connected to the electrode closest to the collector electrode sensing terminal among the N electrodes is made smaller than the current output from the other constant current sources.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020168349 | 2020-10-05 | ||
| JP2020-168349 | 2020-10-05 | ||
| PCT/JP2021/031177 WO2022074952A1 (en) | 2020-10-05 | 2021-08-25 | Semiconductor testing device and semiconductor testing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116325104A true CN116325104A (en) | 2023-06-23 |
Family
ID=81125779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180066270.0A Pending CN116325104A (en) | 2020-10-05 | 2021-08-25 | Semiconductor test apparatus and semiconductor test method |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7479498B2 (en) |
| CN (1) | CN116325104A (en) |
| WO (1) | WO2022074952A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024106052A1 (en) * | 2022-11-17 | 2024-05-23 | 三菱電機株式会社 | Semiconductor testing device, semiconductor testing method, and method for producing semiconductor device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0233437U (en) * | 1988-08-26 | 1990-03-02 | ||
| JP2006071467A (en) * | 2004-09-02 | 2006-03-16 | Toyota Industries Corp | Electrical characteristics measuring method and system for semiconductor chip |
| JP5432700B2 (en) | 2009-12-28 | 2014-03-05 | 株式会社日本マイクロニクス | Semiconductor device inspection equipment |
| JP5584146B2 (en) * | 2011-01-20 | 2014-09-03 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
| JP5929612B2 (en) * | 2012-08-08 | 2016-06-08 | 三菱電機株式会社 | Semiconductor device measuring method and measuring instrument |
| JP6790974B2 (en) * | 2017-04-06 | 2020-11-25 | 株式会社デンソー | Inspection device for semiconductor elements |
| JP6962205B2 (en) * | 2018-01-15 | 2021-11-05 | 信越半導体株式会社 | Semiconductor device evaluation device |
-
2021
- 2021-08-25 JP JP2022555295A patent/JP7479498B2/en active Active
- 2021-08-25 WO PCT/JP2021/031177 patent/WO2022074952A1/en active Application Filing
- 2021-08-25 CN CN202180066270.0A patent/CN116325104A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022074952A1 (en) | 2022-04-14 |
| JP7479498B2 (en) | 2024-05-08 |
| JPWO2022074952A1 (en) | 2022-04-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10267849B2 (en) | Sensing structure of alignment of a probe for testing integrated circuits | |
| US10175284B2 (en) | Circuit board testing apparatus and circuit board testing method | |
| US9140734B2 (en) | Measuring apparatus and measuring method | |
| US11041900B2 (en) | Equi-resistant probe distribution for high-accuracy voltage measurements at the wafer level | |
| US10698020B2 (en) | Current regulation for accurate and low-cost voltage measurements at the wafer level | |
| CN109557376B (en) | Resistance measuring device, substrate inspection device, and resistance measuring method | |
| WO2008041678A1 (en) | Board testing apparatus and board testing method | |
| US9684053B2 (en) | Wafer for testing and a test system | |
| JP7479498B2 (en) | Semiconductor testing device and semiconductor testing method | |
| JP2007333598A (en) | Substrate inspecting means | |
| CN110794290B (en) | Substrate detection device and substrate detection method | |
| JP2006126197A (en) | General-purpose testing tool | |
| US20130249590A1 (en) | TSV Testing Using Test Circuits and Grounding Means | |
| WO2024106052A1 (en) | Semiconductor testing device, semiconductor testing method, and method for producing semiconductor device | |
| JP2019176080A (en) | Conduction inspection device, prober, and static eliminator | |
| CN115825567A (en) | Device and method for testing resistance value change of welding spot | |
| KR101471802B1 (en) | Method of inspecting test jig | |
| US3440530A (en) | Method and apparatus for measuring the resistance of an electrical component which may be shunted by a semiconductor device | |
| US3445769A (en) | Method and apparatus for in-circuit semiconductor characteristic measurements by establishing a predetermined voltage across the semiconductor and an externally connected impedance | |
| US3287643A (en) | Method and apparatus for measuring the beta parameter of an in-circuit transistor without the application of d. c. biasing thereto | |
| JPH0613441A (en) | Inspection and measurement of semiconductor integrated circuit device | |
| CN117805568A (en) | Method for testing contact resistance, wafer and wafer testing system | |
| JPH1131728A (en) | Semiconductor element inspection method in substrate inspection device | |
| JPH04253351A (en) | Method for measuring contact resistance | |
| JPS61270675A (en) | Testing device for dielectric strength of electronic circuit element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |