CN116314347A - 一种异质SiC衬底上GaN全垂直功率二极管及其制备方法 - Google Patents
一种异质SiC衬底上GaN全垂直功率二极管及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种异质碳化硅衬底上氮化镓全垂直功率二极管及其制备方法,通过预通三甲基铝方法形成超薄AlGaN缓冲层,代替较厚的绝缘缓冲层,在异质SiC衬底上实现可垂直导电的GaN基外延结构;在此基础上,通过优化衬底侧欧姆接触和GaN侧阳极金属制备工艺,以简单工艺实现GaN全垂直功率二极管,避免因深刻蚀、衬底移除等复杂工艺导致的漏电增加或提前击穿问题。所制备二极管具有整流特性好、比导通电阻低和温度稳定性好等优点。本发明基于异质SiC衬底上可垂直导电外延结构,实现全垂直GaN功率二极管,可大幅简化制备工艺并降低成本。
Description
技术领域
本发明属于微电子技术领域,具体涉及到一种异质SiC衬底上GaN全垂直功率二极管及其制造方法。
背景技术
由于宽禁带半导体GaN具有优越的材料特性,如禁带宽度大、击穿场强高、电子饱和速度高等,使其成为最热门的半导体材料之一,在高频率、高效率、大功率器件上展现出良好的应用前景。与横向结构功率器件相比,垂直结构可以实现更均匀的电流分布,器件耐压不受横向尺寸的限制。一方面,可以有效减小芯片面积,降低成本;另一方面,峰值电场从器件表面移动到内部,可提高器件可靠性。基于此,垂直功率器件具有散热性能好、可靠性高等优点,且更易实现高功率、小尺寸。基于GaN自支撑衬底的垂直功率二极管由于成本高、尺寸小而阻碍了其大规模生产和商业化。异质衬底可大幅降低GaN功率器件的成本,但由于异质衬底上的外延结构存在用于缓解失配的绝缘缓冲层,使电流难以垂直流动,因此多为准垂直结构器件,但却面临电流积聚效应导致的导通电阻增大、泄漏电流较高和芯片面积利用率较低等诸多问题和挑战。
发明内容
本部分的目的在于概述本发明的实施例及其制备方法。鉴于上述现有技术中存在的问题,提出了本发明。
本发明的目的是提供一种异质SiC衬底上GaN全垂直功率二极管及其制备方法,基于可垂直导电的外延结构,简化异质衬底垂直GaN功率器件的制备工艺并降低制造成本。
为实现上述技术目的,本发明提供了如下技术方案:一种异质SiC衬底上GaN全垂直功率二极管,基于可垂直导电的外延结构。外延过程中通过预通三甲基铝方法形成超薄AlGaN缓冲层,代替较厚的绝缘缓冲层,实现可垂直导电的高质量GaN基外延结构。通过在衬底侧制备欧姆电极和GaN侧制备阳极电极形成全垂直功率二极管。
所述垂直肖特基二极管由欧姆接触金属层、SiC异质衬底、超薄AlGaN缓冲层、n+-GaN外延层、n--GaN外延层和肖特基接触金属层自下而上依次接触组成;
所述PiN二极管由欧姆接触金属层、SiC异质衬底、超薄AlGaN缓冲层、n+-GaN外延层、n--GaN外延层、P+-GaN外延层、p++-GaN外延层、和阳极接触金属层自下而上依次接触组成;
优选的,其中肖特基二极管外延层n+-GaN外延层(3)的掺杂浓度为1×1018~1×1020cm-3,n--GaN漂移层(4)的掺杂浓度为1×1016~1×1017cm-3。
优选的,其中PiN二极管外延层n+-GaN外延层(3)的掺杂浓度为1×1018~1×1020cm-3,n--GaN漂移层(4)的掺杂浓度为1×1016~1×1017cm-3,P+-GaN外延层(9)的掺杂浓度为1×1018~1×1019cm-3、p++-GaN外延层(10)的掺杂浓度为1×1020~1×1021cm-3。
优选的,其中所述SiC背面欧姆电极的材料为100~200nm厚的镍金属。
本发明的另一个目的是提供上述异质衬底全垂直氮化镓功率二极管的制备方法,包括:
在SiC衬底下表面磁控溅射100~200nm厚的金属镍,在真空/氩气/氮气氛围中900~1100℃进行热退火处理,形成欧姆电极;
在肖特基二极管主结边缘形成离子注入终端,缓解主结边缘电场拥挤。
在GaN外延层上表面进行光刻定义阳极区域,依次溅射沉积金属镍和金,形成阳极金属;
优选的,其中所述欧姆电极退火前,使用100~300nm厚的SiO2或SiN保护GaN外延层。
与现有技术相比,本发明具有如下有益效果;
本发明采用预通三甲基铝方法在SiC衬底上形成超薄AlGaN缓冲层,在缓冲层上直接生长GaN材料,形成可垂直导电的异质衬底GaN外延结构。在高温退火中使用二氧化硅或氮化硅薄膜有效保护GaN表面,形成二极管的阴极和阳极,在异质SiC衬底上实现GaN全垂直功率二极管。此方法具有比以往的异质衬底GaN功率二极管更为简单的工艺步骤,有效降低复杂制备工艺所引入的损伤及其成本。此外所制备二极管具有整流特性好、比导通电阻低、温度稳定性好等优点。
附图说明
为了更清楚地说明本发明实施例的技术方案,下面将对实施例描述中所需使用的附图作简单介绍。
图1为本发明实施例1肖特基二极管的结构示意图;
图2为本发明实施例2PiN二极管的结构示意图;
图3为本发明实施例圆形元胞俯视图;
图4为本发明实施例1正向导电性测试结果
具体实施方式
为使本发明的目的、技术方案和优点更加清楚说明,以下结合具体实施例,并参照附图,对本发明进一步详细说明。附图中未绘示或描述的实现方式,为所述技术领域中技术人员所知的形式。本文提供了包含特定值的参数示范,但参数无需确切等于相应的值,而是在可接受的误差容限或设计约束内近似于相应的值。
本发明提出了一种异质SiC衬底上GaN全垂直功率二极管及其制备方法,该方法所述的GaN全垂直功率二极管基于可垂直导电的外延结构。外延过程中通过预通三甲基铝方法形成超薄AlGaN缓冲层,实现可垂直导电的高质量GaN基外延结构。此方法具有比以往的异质衬底GaN垂直功率二极管更为简单的工艺步骤,有效降低复杂制备工艺所引入的损伤及其成本。另一方面,使用二氧化硅或氮化硅薄膜有效保护GaN表面,减小GaN薄膜表面粗糙度,提升阳极金属接触质量,减小高温下GaN挥发对功率二极管器件性能的影响,降低器件开启电压和导通电阻,提升器件开关比。下面结合附图和实例对本发明进行详细说明。
实施例1
本实施例提供的一种异质SiC衬底GaN全垂直肖特基二极管制备方法,由欧姆接触金属层、SiC异质衬底、超薄AlGaN缓冲层、n+-GaN外延层、n--GaN外延层和肖特基接触金属层自下而上依次接触组成,如图1所示。其中肖特基二极管n+-GaN外延层(3)的掺杂浓度为1×1018~1×1020cm-3,n--GaN漂移层(4)的掺杂浓度为1×1016~1×1017cm-3。器件制备工艺具体步骤如下:
(1)在SiC异质衬底(1)上沉积Ni金属层,厚度为100~200nm;
(2)在n--GaN外延层(4)表面生长100~300nm厚SiO2或SiN,作为退火保护层;
(3)在真空/氩气/氮气氛围中900~1100℃进行快速热退火(RTA),生成欧姆接触金属层(5);
(4)退火后,使用BOE溶液去除表面SiO2;
(5)在肖特基主结周围定义20~50μm宽离子注入区,如图2,采用F/N/B离子注入在主结周围形成高阻区,缓解边缘电场拥挤减低主结周围峰值电场;
(6)在n--GaN外延层(4)表面光刻定义肖特基电极区,阳极金属向外延伸5~10微米覆盖离子注入区形成场板(8),如图2所示。沉积金属层Ni(30~50nm)/Au(100~200nm),形成肖特基电极,作为肖特基二极管阳极。
如图4所示为实施例1一种导电SiC衬底上GaN垂直功率二极管垂直导电性的测试结果。实施例完全垂直型GaN肖特基二极管正向导电性能稳定,导通电阻为0.84mΩ·cm2。
实施例2
本实施例提供的一种异质SiC衬底GaN全垂直PiN二极管制备方法,由欧姆接触金属层、SiC异质衬底、超薄AlGaN缓冲层、n+-GaN外延层、n--GaN外延层、P+-GaN外延层、p++-GaN外延层和阳极接触金属层自下而上依次接触组成,如图2所示。其中PiN二极管外延层n+-GaN外延层(3)的掺杂浓度为1×1018~1×1020cm-3,n--GaN漂移层(5)的掺杂浓度为1×1016~1×1017cm-3,P+-GaN外延层(9)的掺杂浓度为1×1018~1×1019cm-3、p++-GaN外延层(10)的掺杂浓度为1×1020~1×1021cm-3。器件制备工艺具体步骤如下:
(1)在SiC异质衬底(1)上沉积Ni金属层,厚度为100~200nm;
(2)在p++-GaN外延层(4)表面生长100~300nm厚SiO2或SiN,作为退火保护层;
(3)在真空/氩气/氮气氛围中900~1100℃进行快速热退火(RTA),生成欧姆接触金属层(5);
(4)退火后,使用BOE溶液去除表面SiO2;
(5)P++-GaN外延层(4)表面光刻定义阳极电极(6),如图2所示。通过磁控溅射沉淀厚度为10~30nm的镍,40~100nm的金,沉积金属层Ni(10~30nm)/Au(40~100nm),在氧气氛围中400~550℃进行RTA,形成P型GaN的欧姆电极,作为PiN二极管阳极。
上述具体实施例,对本发明的目的、技术方案和有益效果进行了进一步详细说明,所应理解的是,以上所述仅为本发明的具体实施例而已,并不应用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (10)
1.一种异质SiC衬底上GaN全垂直功率二极管,其特征在于:该异质SiC衬底上GaN全垂直功率二极管为完全垂直型肖特基二极管;
基于异质SiC衬底上垂直导电外延结构;外延过程中通过预通三甲基铝方法形成超薄AlGaN缓冲层(2),实现可垂直导电的GaN基外延结构;所述超薄AlGaN缓冲层(2)的厚度为2nm;肖特基二极管由欧姆接触金属层、SiC异质衬底、超薄AlGaN缓冲层、n+-GaN外延层、n--GaN外延层和肖特基接触金属层自下而上依次接触。
2.根据权利要求1所述的一种异质SiC衬底上GaN全垂直功率二极管,其特征在于:肖特基二极管外延层n+-GaN外延层(3)的掺杂浓度为1×1018~1×1020cm-3,n--GaN漂移层(4)的掺杂浓度为1×1016~1×1017cm-3,所述n--GaN漂移层(4)厚度为3-10微米。
3.一种异质SiC衬底上GaN全垂直功率二极管,其特征在于:异质SiC衬底上GaN全垂直功率二极管为PiN二极管;
基于异质SiC衬底上垂直导电外延结构;外延过程中通过预通三甲基铝方法形成超薄AlGaN缓冲层(2),实现可垂直导电的GaN基外延结构;所述超薄AlGaN缓冲层(2)的厚度为2nm;PiN二极管由欧姆接触金属层、SiC异质衬底、超薄AlGaN缓冲层、n+-GaN外延层、n--GaN外延层、P+-GaN外延层、p++-GaN外延层和阳极接触金属层自下而上依次接触组成。
4.根据权利要求3所述的一种异质SiC衬底上GaN全垂直功率二极管,其特征在于:PiN二极管外延层n+-GaN外延层(3)的掺杂浓度为1×1018~1×1020cm-3,n--GaN漂移层(5)的掺杂浓度为1×1016~1×1017cm-3,P+-GaN外延层(9)的掺杂浓度为1×1018~1×1019cm-3,p++-GaN外延层(10)的掺杂浓度为1×1020~1×1021cm-3,所述n--GaN漂移层(4)厚度为3-10微米。
5.根据权利要求1所述的一种异质SiC衬底上GaN全垂直功率二极管,其特征在于:肖特基二极管阳极金属层自下而上为Ni/Au,肖特基二极管阳极金属层与所述n--GaN外延层(4)的上表面形成肖特基接触,接触区域由光刻进行图形化,接触金属图形的直径为50~300微米。
6.根据权利要求3所述的一种异质SiC衬底上GaN全垂直功率二极管,其特征在于:PiN二极管阳极金属层自下而上为Ni/Au,所述PiN二极管阳极金属层与所述P++-GaN外延层构成欧姆接触,该欧姆接触的区域由光刻进行图形化,接触金属图形的直径为50~300微米。
7.一种实现如权利要求1所述异质SiC衬底上GaN全垂直功率二极管的器件制备方法,其特征在于,包括如下步骤:
(1)在SiC衬底下表面上磁控溅射镍金属,形成阴极金属层后在n--GaN漂移层表面生长SiO2或SiN保护层,进行热退火处理,构成欧姆电极;
(2)在肖特基主结边缘形成离子注入终端,缓解主结边缘电场拥挤;
(3)在n--GaN外延层上进行光刻定义阳极区域,依次溅射镍金属和金金属,构成肖特基电极。
8.根据权利要求7所述的异质SiC衬底上GaN全垂直功率二极管的器件制备方法,其特征在于,包括如下步骤:
(1)在SiC衬底下表面上先磁控溅射镍金属,形成阴极金属层后在p++-GaN层表面生长SiO2或SiN保护层,进行热退火处理,构成阴极欧姆电极;
(2)在p++-GaN外延层上进行光刻定义阳极区域,依次溅射镍金属和金金属,构成阳极金属电极。
9.如权利要求8所述的异质SiC衬底上GaN全垂直功率二极管的器件制备方法,其特征在于:所述阴极欧姆电极的材料为Ni金属100~200纳米,所述金属覆盖整个衬底的背面与所述SiC衬底(1)下表面在900~1100℃真空/氮气/氩气氛围下退火形成欧姆接触。
10.如权利要求9所述的异质SiC衬底上GaN全垂直功率二极管的器件制备方法,其特征在于:退火时使用100~300纳米SiO2或SiN保护GaN外延层上表面。
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