CN116232011B - Voltage conversion device with energy recovery mechanism and power supply chip - Google Patents
Voltage conversion device with energy recovery mechanism and power supply chip Download PDFInfo
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- CN116232011B CN116232011B CN202310245729.4A CN202310245729A CN116232011B CN 116232011 B CN116232011 B CN 116232011B CN 202310245729 A CN202310245729 A CN 202310245729A CN 116232011 B CN116232011 B CN 116232011B
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- 238000004146 energy storage Methods 0.000 claims description 42
- 239000003990 capacitor Substances 0.000 claims description 5
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0006—Arrangements for supplying an adequate voltage to the control circuit of converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0032—Control circuits allowing low power mode operation, e.g. in standby mode
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The application discloses voltage conversion device with energy recuperation mechanism belongs to voltage conversion technical field, and the device includes: high voltage circuit, low voltage circuit and low power consumption circuit still include: the voltage conversion circuit is used for converting a low-voltage control signal generated by the low-voltage circuit into a high-voltage control signal and controlling a switching tube in the high-voltage circuit by utilizing the high-voltage control signal; the high-voltage grounding generation module is used for generating a high-voltage grounding signal corresponding to the power supply voltage of the high-voltage circuit and ensuring the normal operation of a switching tube in the high-voltage circuit; and the energy recovery module is used for recovering the flow energy between the power supply voltage of the high-voltage circuit and the high-voltage grounding signal and supplying power to the low-power-consumption circuit by utilizing the recovered energy. The device can recycle the energy between the power supply voltage and the high-voltage grounding signal in the high-voltage circuit, and further improve the overall utilization rate of the energy.
Description
Technical Field
The present invention relates to the field of voltage conversion technologies, and in particular, to a voltage conversion device with an energy recovery mechanism and a power chip.
Background
Along with the continuous development of science and technology, the functions of the chips in the portable product are more and more diversified, and the working voltages of all the functional modules of the internal chips are different, so that the voltage conversion circuit is required to convert the power supply voltage of the power supply into the working voltage required by all the functional modules. In this process, in order to avoid breakdown and damage of the switching tube of the high-voltage circuit in the chip, a high-voltage ground signal is usually specially designed in the high-voltage circuit to be used in the power supply conversion circuit.
Referring to fig. 1, fig. 1 is an internal structure diagram of a portable product chip in the prior art. In the portable product chip shown in fig. 1, a plurality of analog circuits, a digital circuit, a voltage conversion circuit and a high-voltage circuit are provided, wherein the plurality of analog circuits and the digital circuit are all operated in a low-voltage power region, and the plurality of high-voltage circuits are all operated in a high-voltage power region. In the prior art, energy between a power supply voltage and a high-voltage grounding signal in a high-voltage circuit is lost by a low-voltage grounding terminal and cannot be reused, so that a large amount of energy is wasted. Currently, there is no more effective solution to this technical problem.
Therefore, how to recycle the energy between the high-voltage circuit power supply voltage and the high-voltage ground signal and further improve the overall utilization rate of the energy is a technical problem to be solved by the skilled person.
Disclosure of Invention
In view of the above, the present invention is directed to a voltage conversion device with an energy recovery mechanism and a power chip, so as to recover and utilize energy between a power supply voltage and a high-voltage ground signal in a high-voltage circuit, and further improve the overall utilization rate of energy. The specific scheme is as follows:
a voltage conversion device with an energy recovery mechanism, the voltage conversion device comprising: high voltage circuit, low voltage circuit and low power consumption circuit still include:
the voltage conversion circuit is used for converting the low-voltage control signal generated by the low-voltage circuit into a high-voltage control signal and controlling a switching tube in the high-voltage circuit by utilizing the high-voltage control signal;
the high-voltage grounding generation module is connected with the voltage conversion circuit and is used for generating a high-voltage grounding signal corresponding to the power supply voltage of the high-voltage circuit and ensuring the normal operation of the switching tube in the high-voltage circuit;
and the energy recovery module is connected with the high-voltage grounding generation module and is used for recovering flow energy between the power supply voltage of the high-voltage circuit and the high-voltage grounding signal and supplying power to the low-power consumption circuit by utilizing the recovered energy.
Preferably, the voltage conversion circuit includes: the bias current generator comprises a first PMOS tube, a second PMOS tube, a third PMOS tube, a fourth PMOS tube, a first NMOS tube, a second NMOS tube, a third NMOS tube, a fourth NMOS tube, a fifth NMOS tube, a sixth NMOS tube, a seventh NMOS tube, an eighth NMOS tube, a ninth NMOS tube and a bias current generator;
the source electrode of the first PMOS transistor, the source electrode of the second PMOS transistor, the source electrode of the third PMOS transistor and the source electrode of the fourth PMOS transistor are all used for receiving the supply voltage of the high-voltage circuit, the gate electrode of the first PMOS transistor is connected with the drain electrode of the second PMOS transistor, the drain electrode of the second NMOS transistor, the gate electrode of the third PMOS transistor and the gate electrode of the third NMOS transistor respectively, the drain electrode of the first PMOS transistor is connected with the drain electrode of the first NMOS transistor, the gate electrode of the second PMOS transistor, the gate electrode of the fourth PMOS transistor and the gate electrode of the fourth NMOS transistor respectively, the drain electrode of the second PMOS transistor is connected with the drain electrode of the second NMOS transistor, the gate electrode of the third PMOS transistor and the gate electrode of the third NMOS transistor respectively, the drain electrode of the fourth PMOS transistor is connected with the drain electrode of the fourth NMOS transistor, the source electrode of the third PMOS transistor is connected with the drain electrode of the NMOS transistor respectively, the source electrode of the seventh NMOS transistor is connected with the drain electrode of the fifth NMOS transistor, the drain electrode of the eighth NMOS transistor is connected with the drain electrode of the eighth NMOS transistor, the source electrode of the eighth NMOS transistor is connected with the drain electrode of the eighth NMOS transistor, the eighth NMOS transistor is connected with the drain electrode of the eighth NMOS transistor is connected with the drain electrode of the NMOS transistor is connected with the NMOS transistor of the NMOS transistor respectively;
correspondingly, the gate of the first NMOS tube is a first input end of the voltage conversion circuit, the gate of the second NMOS tube is a second input end of the voltage conversion circuit, the drain of the third PMOS tube is a first output end of the voltage conversion circuit, and the drain of the fourth PMOS tube is a second output end of the voltage conversion circuit.
Preferably, the switching tube is specifically a fifth PMOS tube.
Preferably, the high voltage ground generation module includes: the first resistor, the error amplifier and the sixth PMOS tube;
the first end of the first resistor is used for receiving the power supply voltage of the high-voltage circuit, the second end of the first resistor is connected with the source electrode of the fifth PMOS tube, the drain electrode of the fifth PMOS tube is used for receiving the high-voltage grounding signal, and the drain electrode of the fifth PMOS tube is respectively connected with the source electrode of the sixth PMOS tube and the negative input end of the error amplifier;
correspondingly, the grid electrode of the fifth PMOS tube is used for receiving the high-voltage control signal, the positive input end of the error amplifier is used for receiving the reference voltage, and the source electrode of the sixth PMOS tube is the output end of the high-voltage grounding generation module.
Preferably, the energy recovery module includes: a tenth NMOS tube, a first switch, a second switch, a third switch, a fourth switch, a fifth switch, a second resistor, an energy storage element and a control module for controlling the conduction states of the first switch, the second switch, the third switch, the fourth switch and the fifth switch;
the source electrode of the tenth NMOS tube is respectively connected with the first end of the first switch and the first end of the third switch, the second end of the first switch is connected with the first end of the second resistor, the second end of the second resistor is grounded, the second end of the third switch is respectively connected with the first end of the second switch and the first end of the fourth switch, the second end of the second switch is connected with the first end of the energy storage element, the second end of the energy storage element is grounded, the second end of the fourth switch is connected with the first end of the low-power-consumption circuit, the second end of the low-power-consumption circuit is connected with the first end of the fifth switch, and the second end of the fifth switch is used for receiving the power supply voltage of the low-voltage circuit;
correspondingly, the grid electrode of the tenth NMOS tube is used for receiving the power supply voltage of the low-voltage circuit, the drain electrode of the tenth NMOS tube is connected with the drain electrode of the sixth PMOS tube, and the second end of the third switch is used for receiving the preset voltage.
Preferably, the energy storage element is in particular a capacitor.
Preferably, the low power consumption circuit specifically includes: an operational amplifier or a bandgap reference circuit.
Preferably, the control module includes: a comparator, a sixth switch, a seventh switch, and a logic controller;
the first end of the sixth switch is used for receiving a preset upper limit voltage, the first end of the seventh switch is used for receiving a preset lower limit voltage, the second end of the sixth switch and the second end of the seventh switch are both connected with the negative input end of the comparator, the positive input end of the comparator is used for receiving the preset voltage, and the output end of the comparator is connected with the input end of the logic controller; the preset voltage is greater than the preset lower limit voltage and less than the preset upper limit voltage;
the execution logic of the logic controller comprises:
when the voltage value of the energy storage element is smaller than the preset lower limit voltage, controlling the second switch, the third switch and the fifth switch to be short-circuited, and controlling the first switch and the fourth switch to be open-circuited so as to charge the energy storage element by using the supply voltage of the high-voltage circuit;
when the voltage value of the energy storage element is larger than the preset lower limit voltage and smaller than the preset upper limit voltage, controlling the second switch, the third switch and the fourth switch to be short-circuited, controlling the first switch and the fifth switch to be open-circuited, so as to charge the energy storage element by using the power supply voltage of the high-voltage circuit and supply power to the low-power-consumption circuit by using the energy storage element;
when the voltage value of the energy storage element is larger than the preset upper limit voltage, the third switch is controlled to be opened, and the first switch, the second switch and the fourth switch are controlled to be short-circuited, so that the energy storage element is utilized to supply power to the low-power-consumption circuit.
Preferably, the logic controller is specifically a circuit built by a logic gate circuit.
Correspondingly, the invention also discloses a power supply chip, which comprises the voltage conversion device with the energy recovery mechanism.
The voltage conversion device provided by the invention is provided with a high-voltage circuit, a low-power-consumption circuit, a voltage conversion circuit, a high-voltage grounding generation module and an energy recovery module; the voltage conversion circuit can convert a control signal generated by the low-voltage circuit into a high-voltage control signal, and the switching tube in the high-voltage circuit is controlled by the high-voltage control signal; the high-voltage grounding generation module can generate a high-voltage grounding signal corresponding to the power supply voltage of the high-voltage circuit and ensure the normal operation of a switching tube in the high-voltage circuit; the energy recovery module can recover the flowing energy between the power supply voltage of the high-voltage circuit and the high-voltage grounding signal, and power the low-power-consumption circuit by utilizing the recovered energy, so that the energy waste between the power supply voltage of the high-voltage circuit and the high-voltage grounding signal is avoided, and the overall utilization rate of the energy can be further improved. Correspondingly, the power supply chip provided by the invention has the beneficial effects.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
FIG. 1 is a diagram showing an internal structure of a portable product chip according to the prior art;
FIG. 2 is a block diagram of a voltage conversion device with an energy recovery mechanism according to an embodiment of the present invention;
FIG. 3 is a block diagram of a voltage conversion circuit according to an embodiment of the present invention;
FIG. 4 is a timing diagram of the input signal D and the output signal OUT in the voltage converting circuit shown in FIG. 3;
FIG. 5 is a block diagram of a high voltage generation module according to an embodiment of the present invention;
FIG. 6 is a block diagram of a control module according to an embodiment of the present invention;
FIG. 7 is a block diagram of a high voltage generation module according to the prior art;
FIG. 8 is a schematic diagram showing the variation of the voltage difference between the power supply voltage and the high voltage ground signal of the high voltage circuit in the circuit shown in FIG. 7;
FIG. 9 is a schematic diagram showing the variation of the voltage difference between the supply voltage of the high voltage circuit and the high voltage ground signal in the circuit shown in FIG. 5;
fig. 10 is a schematic diagram showing the average current change in the low-voltage circuit after using the voltage conversion device with the energy recovery mechanism provided by the present application.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 2, fig. 2 is a block diagram of a voltage conversion device with an energy recovery mechanism according to an embodiment of the present invention, where the voltage conversion device includes: the high-voltage circuit 11, the low-power consumption circuit 13, and the low-power consumption circuit 12 further include:
a voltage conversion circuit 14 for converting the low voltage control signal generated by the low voltage circuit 12 into a high voltage control signal and controlling the switching tube in the high voltage circuit 11 by using the high voltage control signal;
a high voltage generating module 15 connected to the voltage converting circuit 14 for generating a high voltage ground signal corresponding to the power supply voltage of the high voltage circuit 11 and ensuring the normal operation of the switching tube in the high voltage circuit 11;
the energy recovery module 16 is connected to the high-voltage power generation module 15, and is configured to recover flow energy between the power supply voltage of the high-voltage circuit 11 and the high-voltage ground signal, and to supply power to the low-power consumption circuit 13 by using the recovered energy.
In this embodiment, a voltage conversion device with an energy recovery mechanism is provided, by which energy waste between a supply voltage and a high-voltage ground signal in a high-voltage circuit can be avoided, and the overall utilization rate of energy is further improved.
The voltage conversion device is provided with a high-voltage circuit 11, a low-voltage circuit 12, a low-power circuit 13, a voltage conversion circuit 14, a high-voltage ground generation module 15, and an energy recovery module 16. The low-voltage circuit 12 is a circuit whose operating voltage is less than or equal to the withstand voltage of a normal MOSFET (Metal Oxide Semiconductor Field Effect Transistor, metal half field effect transistor), and the power supply voltage of the low-voltage circuit 12 is usually 5V, 3.3V, or 1.8V; the high voltage circuit 11 is a circuit whose operation voltage is equal to or higher than a normal MOSFET withstand voltage value; while the supply voltage of the low power circuit 13 is typically low and its operating current is typically microampere. The related concepts of the high voltage circuit 11, the low voltage circuit 12 and the low power consumption circuit 13 can be referred to in the prior art, and will not be described herein in detail.
In comparison with the prior art, the voltage conversion device provided in the present application focuses on adding the voltage conversion module 14, the high-voltage ground generation module 15 and the energy recovery module 16 to the voltage conversion device. The voltage conversion circuit 14 is configured to convert a low voltage control signal generated by the low voltage circuit 12 into a high voltage control signal, and control a switching tube in the high voltage circuit 11 by using the high voltage control signal; the number of switching transistors in the high-voltage circuit 11 may be one or more, and is not particularly limited herein. The high voltage generating module 15 is configured to generate a high voltage ground signal corresponding to a power supply voltage of the high voltage circuit 11, and ensure that a switching tube in the high voltage circuit 11 can be normally turned on and off, and also avoid breakdown or burnout of the switching tube in the high voltage circuit 11 by a high voltage difference. The energy recovery module 16 is configured to recover flow energy between the power supply voltage of the high-voltage circuit 11 and the high-voltage ground signal, and to supply power to the low-power circuit 13 by using the recovered energy.
In practical applications, the voltage conversion circuit 14, the high-voltage ground generation module 15, and the energy recovery module 16 may be any circuit structure capable of achieving the corresponding functions, and the circuit structures of the voltage conversion circuit 14, the high-voltage ground generation module 15, and the energy recovery module 16 are not particularly limited.
It is conceivable that, when the energy recovery module 16 is provided in the voltage conversion device, and the energy recovery module 16 recovers the flow energy between the power supply voltage of the high-voltage circuit 11 and the high-voltage ground signal, the low-power consumption circuit 13 can be powered by the energy recovered by the energy recovery module 16. In this arrangement, waste of flowing energy between the power supply voltage of the high-voltage circuit 11 and the high-voltage ground signal can be avoided, and after the low-power-consumption circuit 13 is powered by the energy recovered by the energy recovery module 16, consumption of the power supply voltage by the low-power-consumption circuit can be reduced, so that the overall utilization rate of the energy can be further improved.
It can be seen that, in the voltage conversion device provided in this embodiment, a high voltage circuit, a low power consumption circuit, a voltage conversion circuit, a high voltage ground generation module, and an energy recovery module are provided; the voltage conversion circuit can convert a control signal generated by the low-voltage circuit into a high-voltage control signal, and the switching tube in the high-voltage circuit is controlled by the high-voltage control signal; the high-voltage grounding generation module can generate a high-voltage grounding signal corresponding to the power supply voltage of the high-voltage circuit and ensure the normal operation of a switching tube in the high-voltage circuit; the energy recovery module can recover the flowing energy between the power supply voltage of the high-voltage circuit and the high-voltage grounding signal, and power the low-power-consumption circuit by utilizing the recovered energy, so that the energy waste between the power supply voltage of the high-voltage circuit and the high-voltage grounding signal is avoided, and the overall utilization rate of the energy can be further improved.
Based on the above embodiments, the technical solution is further described and optimized in this embodiment, please refer to fig. 3, and fig. 3 is a block diagram of a voltage conversion circuit provided in an embodiment of the present invention. As a preferred embodiment, the voltage conversion circuit includes: the bias current generator comprises a first PMOS tube PMOS1, a second PMOS tube PMOS2, a third PMOS tube PMOS3, a fourth PMOS tube PMOS4, a first NMOS tube NMOS1, a second NMOS tube NMOS2, a third NMOS tube NMOS3, a fourth NMOS tube NMOS4, a fifth NMOS tube NMOS5, a sixth NMOS tube NMOS6, a seventh NMOS tube NMOS7, an eighth NMOS tube NMOS8, a ninth NMOS tube NMOS9 and a bias current generator;
wherein the source of the first PMOS transistor PMOS1, the source of the second PMOS transistor PMOS2, the source of the third PMOS transistor PMOS3 and the source of the fourth PMOS transistor PMOS4 are all used for receiving the power supply voltage VDD_HV of the high-voltage circuit, the grid electrode of the first PMOS transistor PMOS1 is respectively connected with the drain electrode of the second PMOS transistor PMOS2, the drain electrode of the second NMOS transistor NMOS2, the grid electrode of the third PMOS transistor PMOS3 and the grid electrode of the third NMOS transistor NMOS3, the drain electrode of the first PMOS transistor PMOS1 is respectively connected with the drain electrode of the first NMOS transistor NMOS1, the grid electrode of the second PMOS transistor PMOS2, the grid electrode of the fourth PMOS transistor PMOS4 and the grid electrode of the fourth NMOS transistor NMOS4, the drain electrode of the second PMOS transistor PMOS2 is respectively connected with the drain electrode of the second NMOS transistor NMOS2, the grid electrode of the third PMOS transistor PMOS3 and the grid electrode of the third NMOS transistor NMOS3, the drain electrode of the fourth PMOS transistor PMOS4 is connected with the drain electrode of the fourth NMOS transistor NMOS4, the source electrode of the first NMOS tube NMOS1 is connected with the drain electrode of the sixth NMOS tube NMOS6, the source electrode of the second NMOS tube NMOS2 is connected with the drain electrode of the seventh NMOS tube NMOS7, the source electrode of the third NMOS tube NMOS3 is connected with the drain electrode of the eighth NMOS tube NMOS8 and the grid electrode of the ninth NMOS tube NMOS9 respectively, the source electrode of the fourth NMOS tube NMOS4 is connected with the drain electrode of the ninth NMOS tube NMOS9 and the grid electrode of the eighth NMOS tube NMOS8 respectively, the drain electrode of the fifth NMOS tube NMOS5, the grid electrode of the sixth NMOS tube NMOS6 and the grid electrode of the seventh NMOS tube NMOS7 are connected with a bias current generator, the source electrode of the fifth NMOS tube NMOS5, the source electrode of the sixth NMOS tube NMOS6 and the source electrode of the seventh NMOS tube NMOS7 are used for receiving a high voltage ground signal VSS_LV_HV of a low voltage circuit, and the source electrode of the eighth NMOS tube NMOS8 and the source electrode of the ninth NMOS tube NMOS9 are used for receiving a high voltage ground signal VSS_LV_HV;
correspondingly, the grid electrode of the first NMOS tube NMOS1 is a first input end of the voltage conversion circuit, the grid electrode of the second NMOS tube NMOS2 is a second input end of the voltage conversion circuit, the drain electrode of the third PMOS tube PMOS3 is a first output end of the voltage conversion circuit, and the drain electrode of the fourth PMOS tube PMOS4 is a second output end of the voltage conversion circuit.
In this embodiment, a structure diagram of a voltage conversion circuit is provided, through which a low voltage control signal generated by a low voltage circuit can be converted into a high voltage control signal, and the high voltage control signal is used to control the on state of a switching tube in the high voltage circuit.
In the voltage conversion circuit shown in fig. 3, the gate of the first NMOS transistor NMOS1 is used for inputting the signal DB to the voltage conversion circuit, the gate of the second NMOS transistor NMOS2 is used for inputting the signal D to the voltage conversion circuit, the drain of the third PMOS transistor PMOS3 is used for outputting the output signal OUTB of the voltage conversion circuit, the drain of the fourth PMOS transistor PMOS4 is used for outputting the output signal OUT of the voltage conversion circuit, and the output signals OUTB and OUT are signals that are opposite to each other. Referring to fig. 4, fig. 4 is a timing chart of an input signal D and an output signal OUT in the voltage conversion circuit shown in fig. 3. In fig. 4, vdd_hv is a power supply voltage of a high-voltage circuit, vdd_lv is a power supply voltage of a low-voltage circuit, vss_hv is a high-voltage ground signal, and vss_lv is a low-voltage ground signal.
Based on the above embodiments, the technical solution is further described and optimized in this embodiment, and as a preferred implementation manner, the switch tube is specifically a fifth PMOS tube.
In practical application, the switching tube in the high-voltage circuit is usually an NMOS tube (N Metal Oxide Semiconductor) or a PMOS tube (Positive Channel Metal Oxide Semiconductor), and the construction structures of the high-voltage ground generation module and the energy recovery module are specifically described below by taking an example when only one fifth PMOS tube is used in the high-voltage circuit.
Referring to fig. 5, fig. 5 is a block diagram of a high voltage ground generation module according to an embodiment of the invention. As a preferred embodiment, the high-voltage power generation module includes: the first resistor R1, the error amplifier U1 and the sixth PMOS tube POMS6;
the first end of the first resistor R1 is used for receiving a supply voltage vdd_hv of the high-voltage circuit, the second end of the first resistor R1 is connected with the source electrode of the fifth PMOS transistor POMS5, the drain electrode of the fifth PMOS transistor POMS5 is used for receiving a high-voltage ground signal vss_hv, and the drain electrode of the fifth PMOS transistor POMS5 is respectively connected with the source electrode of the sixth PMOS transistor POMS6 and the negative input end of the error amplifier U1;
correspondingly, the grid electrode of the fifth PMOS tube POMS5 is used for receiving a high-voltage control signal ENABLE, the positive input end of the error amplifier U1 is used for receiving a reference voltage VREF, and the source electrode of the sixth PMOS tube POMS6 is the output end of the high-voltage grounding generation module.
The high voltage ground generation module shown in fig. 5 can generate a high voltage ground signal vss_hv corresponding to the supply voltage vdd_hv of the high voltage circuit and ensure the normal operation of the switching tube in the high voltage circuit. That is, normal on and off of the fifth PMOS transistor PMOS5 in the high-voltage circuit can be ensured, and the fifth PMOS transistor PMOS5 will not be broken down or burned by the high-voltage difference during the on and off process.
As a preferred embodiment, the energy recovery module includes: the tenth NMOS transistor NMOS10, a first switch S1, a second switch S2, a third switch S3, a fourth switch S4, a fifth switch S5, a second resistor R2, an energy storage element and a control module for controlling the conduction states of the first switch S1, the second switch S2, the third switch S3, the fourth switch S4 and the fifth switch S5;
the source electrode of the tenth NMOS transistor NMOS10 is connected to the first end of the first switch S1 and the first end of the third switch S3, the second end of the first switch S1 is connected to the first end of the second resistor R2, the second end of the second resistor R2 is grounded, the second end of the third switch S3 is connected to the first end of the second switch S2 and the first end of the fourth switch S4, the second end of the second switch S2 is connected to the first end of the energy storage element, the second end of the energy storage element is grounded, the second end of the fourth switch S4 is connected to the first end of the low-power circuit, the second end of the low-power circuit is connected to the first end of the fifth switch S5, and the second end of the fifth switch S5 is used for receiving the supply voltage vdd_lv of the low-voltage circuit;
correspondingly, the gate of the tenth NMOS10 is configured to receive the supply voltage vdd_lv of the low voltage circuit, the drain of the tenth NMOS10 is connected to the drain of the sixth PMOS POMS6, and the second end of the third switch S3 is configured to receive the preset voltage VER.
As a preferred embodiment, the energy storage element can be provided as a capacitor C1. Because the capacitor C1 has a simple structure and low manufacturing cost, the structural complexity of the energy recovery module can be further reduced when the capacitor C1 is used to store the flow energy between the supply voltage vdd_hv and the high voltage ground signal vss_hv in the high voltage circuit. Of course, in practical applications, devices such as an inductor and a chemical battery may be used to store the flow energy between the supply voltage vdd_hv and the high-voltage ground signal vss_hv in the high-voltage circuit, which is not described herein in detail.
As a preferred embodiment, the low power circuit may be provided as an operational amplifier or a bandgap reference circuit. Because the operational amplifier and the band gap reference circuit are relatively common low-power-consumption analog circuits in practical application and are widely applied in practical operation, the universality of the voltage conversion device with the energy recovery mechanism in practical application can be further improved when the low-power-consumption circuit is set as the operational amplifier or the band gap reference circuit.
Referring to fig. 6, fig. 6 is a block diagram of a control module according to an embodiment of the present invention. As a preferred embodiment, the control module includes: a comparator U2, a sixth switch S6, a seventh switch S7, and a logic controller M;
the first end of the sixth switch S6 is configured to receive a preset upper limit voltage vref_h, the first end of the seventh switch S7 is configured to receive a preset lower limit voltage vref_l, the second end of the sixth switch S6 and the second end of the seventh switch S7 are both connected to the negative input end of the comparator U2, the positive input end of the comparator U2 is configured to receive a preset voltage VER, and the output end of the comparator U2 is connected to the input end of the logic controller M; the preset voltage VER is greater than the preset lower limit voltage vref_l and less than the preset upper limit voltage vref_h;
the execution logic of the logic controller M includes:
when the voltage value of the energy storage element is smaller than the preset lower limit voltage VREF_L, the second switch S2, the third switch S3 and the fifth switch S5 are controlled to be short-circuited, and the first switch S1 and the fourth switch S4 are controlled to be open-circuited so as to charge the energy storage element by using the power supply voltage VDD_HV of the high-voltage circuit;
when the voltage value of the energy storage element is larger than the preset lower limit voltage VREF_L and smaller than the preset upper limit voltage VREF_H, the second switch S2, the third switch S3 and the fourth switch S4 are controlled to be in short circuit, the first switch S1 and the fifth switch S5 are controlled to be in open circuit, so that the energy storage element is charged by using the power supply voltage VDD_HV of the high-voltage circuit, and the low-power-consumption circuit is powered by using the energy storage element;
when the voltage value of the energy storage element is greater than the preset upper limit voltage VREF_H, the third switch S3 is controlled to be opened, and the first switch S1, the second switch S2 and the fourth switch S4 are controlled to be short-circuited, so that the energy storage element is utilized to supply power to the low-power-consumption circuit.
Note that in fig. 6, SW1 denotes a control signal of the first switch S1, SW2 denotes a control signal of the second switch S2, SW3 denotes a control signal of the third switch S3, SW4 denotes a control signal of the fourth switch S4, SW5 denotes a control signal of the fifth switch S5, SW6 denotes a control signal of the sixth switch S6, and SW7 denotes a control signal of the seventh switch S7.
Before describing the operation flow of the energy recovery module shown in fig. 5, the structure of the high voltage ground generation module in the prior art will be described in detail. Referring to fig. 7, fig. 7 is a block diagram of a high voltage ground generation module in the prior art. In fig. 7, vdd_hv represents a power supply voltage of a high-voltage circuit, vss_hv represents a high-voltage ground signal, vdd_lv represents a power supply voltage of a low-voltage circuit, vss_lv represents a low-voltage ground signal, R11 and R12 represent resistors, Q3 and Q4 represent NMOS transistors, Q1 and Q2 represent PMOS transistors, and IBIAS represent a bias current generator.
As can be seen from fig. 7, the voltage difference between the supply voltage and the high-voltage ground signal in the high-voltage circuit is mainly adjusted by a current mirror in the prior art. Although this method is simple and effective, the voltage difference between the power supply voltage and the high-voltage ground signal in the high-voltage circuit is easily affected by factors such as voltage process and temperature, so that the voltage difference between the power supply voltage and the high-voltage ground terminal in the high-voltage circuit cannot be fixed. Referring to fig. 8, fig. 8 is a schematic diagram illustrating a variation of a voltage difference between a power supply voltage of the high voltage circuit and a high voltage ground signal in the circuit shown in fig. 7. It can be thought that if the circuit structure is applied to a power management chip, a switching tube in a high-voltage circuit is extremely easy to break down or burn out, and extremely high safety risks exist.
Referring to fig. 5, in the present embodiment, since the error amplifier U1 can form a feedback loop and adjust the signal level of the high voltage ground signal vss_hv in the high voltage circuit, the voltage difference between the power supply voltage and the high voltage ground signal in the high voltage circuit can be more stably maintained under different voltage processes and temperature variations of the high voltage circuit.
The operation process of the energy recovery module can be divided into the following three stages:
the first stage: when the voltage value of the energy storage element is smaller than the preset lower limit voltage VREF_L, the logic controller M controls the second switch S2, the third switch S3 and the fifth switch S5 to be short-circuited, and controls the first switch S1 and the fourth switch S4 to be open-circuited so as to charge the energy storage element by using the power supply voltage VDD_HV of the high-voltage circuit;
and a second stage: when the voltage value of the energy storage element is larger than the preset lower limit voltage VREF_L and smaller than the preset upper limit voltage VREF_H, the logic controller M controls the second switch S2, the third switch S3 and the fourth switch S4 to be in short circuit, and controls the first switch S1 and the fifth switch S5 to be in open circuit, at the moment, the power supply voltage VDD_HV of the high-voltage circuit can continuously charge the energy storage element, and the energy storage element is utilized to supply power to the low-power-consumption circuit;
and a third stage: when the voltage value of the energy storage element is greater than the preset upper limit voltage vref_h, the logic controller M controls the third switch S3 to be turned off, and controls the first switch S1, the second switch S2 and the fourth switch S4 to be short-circuited, and at this time, the power supply voltage of the low-power circuit is completely provided by the energy storage element. When the voltage value of the energy storage element is smaller than the preset upper limit voltage vref_h, the logic controller M returns to the second stage to control the operation state of the energy recovery module. Obviously, the control of the third stage of the energy recovery module is mainly to avoid that the voltage in the energy storage element is too high, the tenth NMOS10 enters the cut-off region, and the feedback loop established by the error amplifier U1 is disconnected, thereby affecting the accuracy of the high voltage ground signal vss_hv.
Referring to fig. 9 and 10, fig. 9 is a schematic diagram showing a variation of a voltage difference between a supply voltage of the high voltage circuit and a high voltage ground signal in the circuit shown in fig. 5. Fig. 10 is a schematic diagram showing the average current change in the low-voltage circuit after using the voltage conversion device with the energy recovery mechanism provided by the present application.
In fig. 9 and 10, stage1, stage2 and Stage3 represent the first, second and third stages of the energy recovery module of fig. 5 during operational operation. As can be seen from fig. 9, the voltage difference between the supply voltage vdd_hv of the high voltage circuit and the high voltage ground signal vss_hv can be kept constant regardless of the operation phase of the energy recovery module in fig. 5. In fig. 10, ivdd_lv represents an operating current of the low-voltage circuit, and ivdd_lv1 represents a current of the low-voltage circuit at different stages of operation of the energy recovery module before the voltage conversion device with the energy recovery mechanism provided in the present application is not used; ivdd_lv2 represents the current of the circuit at different phases of the operation of the energy recovery module after using the voltage conversion device with energy recovery mechanism provided in the present application.
As can be seen from fig. 10, after the voltage conversion device with the energy recovery mechanism provided by the present application is used, the average current in the low-voltage circuit is reduced, which means that the low-voltage circuit recycles the flowing energy between the high-voltage circuit power supply voltage and the high-voltage ground signal, so that the consumption of the low-voltage circuit to the energy can be relatively reduced, and the overall utilization rate of the energy can be further improved.
In addition, in practical application, in order to further reduce the manufacturing cost of the energy recovery module, a logic gate circuit can be used for constructing a logic controller. Since the logic control performed by the logic controller is relatively simple, the internal structure of the logic controller is not specifically described herein.
Correspondingly, the embodiment of the invention also provides a power supply chip, which comprises the voltage conversion device with the energy recovery mechanism.
The power chip provided by the embodiment of the invention has the beneficial effects that the voltage conversion device with the energy recovery mechanism has.
In this specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, so that the same or similar parts between the embodiments are referred to each other. Finally, it is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The voltage conversion device with energy recovery mechanism and the power supply chip provided by the invention are described in detail, and specific examples are applied to illustrate the principles and the implementation modes of the invention, and the description of the above examples is only used for helping to understand the method and the core idea of the invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
Claims (9)
1. A voltage conversion device with an energy recovery mechanism, the voltage conversion device comprising: high voltage circuit, low voltage circuit and low power consumption circuit, its characterized in that still includes:
the voltage conversion circuit is used for converting the low-voltage control signal generated by the low-voltage circuit into a high-voltage control signal and controlling a switching tube in the high-voltage circuit by utilizing the high-voltage control signal;
the high-voltage grounding generation module is connected with the voltage conversion circuit and is used for generating a high-voltage grounding signal corresponding to the power supply voltage of the high-voltage circuit and ensuring the normal operation of the switching tube in the high-voltage circuit;
the energy recovery module is connected with the high-voltage grounding generation module and is used for recovering flow energy between the power supply voltage of the high-voltage circuit and the high-voltage grounding signal and supplying power to the low-power consumption circuit by utilizing the recovered energy;
wherein the voltage conversion circuit includes: the bias current generator comprises a first PMOS tube, a second PMOS tube, a third PMOS tube, a fourth PMOS tube, a first NMOS tube, a second NMOS tube, a third NMOS tube, a fourth NMOS tube, a fifth NMOS tube, a sixth NMOS tube, a seventh NMOS tube, an eighth NMOS tube, a ninth NMOS tube and a bias current generator;
the source electrode of the first PMOS transistor, the source electrode of the second PMOS transistor, the source electrode of the third PMOS transistor and the source electrode of the fourth PMOS transistor are all used for receiving the supply voltage of the high-voltage circuit, the gate electrode of the first PMOS transistor is connected with the drain electrode of the second PMOS transistor, the drain electrode of the second NMOS transistor, the gate electrode of the third PMOS transistor and the gate electrode of the third NMOS transistor respectively, the drain electrode of the first PMOS transistor is connected with the drain electrode of the first NMOS transistor, the gate electrode of the second PMOS transistor, the gate electrode of the fourth PMOS transistor and the gate electrode of the fourth NMOS transistor respectively, the drain electrode of the second PMOS transistor is connected with the drain electrode of the second NMOS transistor, the gate electrode of the third PMOS transistor and the gate electrode of the third NMOS transistor respectively, the drain electrode of the fourth PMOS transistor is connected with the drain electrode of the fourth NMOS transistor, the source electrode of the third PMOS transistor is connected with the drain electrode of the NMOS transistor respectively, the source electrode of the seventh NMOS transistor is connected with the drain electrode of the fifth NMOS transistor, the drain electrode of the eighth NMOS transistor is connected with the drain electrode of the eighth NMOS transistor, the source electrode of the eighth NMOS transistor is connected with the drain electrode of the eighth NMOS transistor, the eighth NMOS transistor is connected with the drain electrode of the eighth NMOS transistor is connected with the drain electrode of the NMOS transistor is connected with the NMOS transistor of the NMOS transistor respectively;
correspondingly, the gate of the first NMOS tube is a first input end of the voltage conversion circuit, the gate of the second NMOS tube is a second input end of the voltage conversion circuit, the drain of the third PMOS tube is a first output end of the voltage conversion circuit, and the drain of the fourth PMOS tube is a second output end of the voltage conversion circuit.
2. The voltage conversion device according to claim 1, wherein the switching tube is specifically a fifth PMOS tube.
3. The voltage conversion device according to claim 2, wherein the high voltage ground generation module includes: the first resistor, the error amplifier and the sixth PMOS tube;
the first end of the first resistor is used for receiving the power supply voltage of the high-voltage circuit, the second end of the first resistor is connected with the source electrode of the fifth PMOS tube, the drain electrode of the fifth PMOS tube is used for receiving the high-voltage grounding signal, and the drain electrode of the fifth PMOS tube is respectively connected with the source electrode of the sixth PMOS tube and the negative input end of the error amplifier;
correspondingly, the grid electrode of the fifth PMOS tube is used for receiving the high-voltage control signal, the positive input end of the error amplifier is used for receiving the reference voltage, and the source electrode of the sixth PMOS tube is the output end of the high-voltage grounding generation module.
4. A voltage conversion device according to claim 3, wherein the energy recovery module comprises: a tenth NMOS tube, a first switch, a second switch, a third switch, a fourth switch, a fifth switch, a second resistor, an energy storage element and a control module for controlling the conduction states of the first switch, the second switch, the third switch, the fourth switch and the fifth switch;
the source electrode of the tenth NMOS tube is respectively connected with the first end of the first switch and the first end of the third switch, the second end of the first switch is connected with the first end of the second resistor, the second end of the second resistor is grounded, the second end of the third switch is respectively connected with the first end of the second switch and the first end of the fourth switch, the second end of the second switch is connected with the first end of the energy storage element, the second end of the energy storage element is grounded, the second end of the fourth switch is connected with the first end of the low-power-consumption circuit, the second end of the low-power-consumption circuit is connected with the first end of the fifth switch, and the second end of the fifth switch is used for receiving the power supply voltage of the low-voltage circuit;
correspondingly, the grid electrode of the tenth NMOS tube is used for receiving the power supply voltage of the low-voltage circuit, the drain electrode of the tenth NMOS tube is connected with the drain electrode of the sixth PMOS tube, and the second end of the third switch is used for receiving the preset voltage.
5. The voltage conversion device according to claim 4, characterized in that the energy storage element is in particular a capacitor.
6. The voltage conversion device according to claim 4, wherein the low power consumption circuit is specifically: an operational amplifier or a bandgap reference circuit.
7. The voltage conversion device according to claim 4, wherein the control module comprises: a comparator, a sixth switch, a seventh switch, and a logic controller;
the first end of the sixth switch is used for receiving a preset upper limit voltage, the first end of the seventh switch is used for receiving a preset lower limit voltage, the second end of the sixth switch and the second end of the seventh switch are both connected with the negative input end of the comparator, the positive input end of the comparator is used for receiving the preset voltage, and the output end of the comparator is connected with the input end of the logic controller; the preset voltage is greater than the preset lower limit voltage and less than the preset upper limit voltage;
the execution logic of the logic controller comprises:
when the voltage value of the energy storage element is smaller than the preset lower limit voltage, controlling the second switch, the third switch and the fifth switch to be short-circuited, and controlling the first switch and the fourth switch to be open-circuited so as to charge the energy storage element by using the supply voltage of the high-voltage circuit;
when the voltage value of the energy storage element is larger than the preset lower limit voltage and smaller than the preset upper limit voltage, controlling the second switch, the third switch and the fourth switch to be short-circuited, controlling the first switch and the fifth switch to be open-circuited, so as to charge the energy storage element by using the power supply voltage of the high-voltage circuit and supply power to the low-power-consumption circuit by using the energy storage element;
when the voltage value of the energy storage element is larger than the preset upper limit voltage, the third switch is controlled to be opened, and the first switch, the second switch and the fourth switch are controlled to be short-circuited, so that the energy storage element is utilized to supply power to the low-power-consumption circuit.
8. The voltage conversion device according to claim 7, characterized in that the logic controller is in particular a circuit built up from logic gates.
9. A power chip comprising a voltage conversion device with energy recovery mechanism according to any of claims 1 to 8.
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