CN116207073A - 在集成电路管芯之间具有内插器的电子封装件 - Google Patents
在集成电路管芯之间具有内插器的电子封装件 Download PDFInfo
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- CN116207073A CN116207073A CN202211508646.1A CN202211508646A CN116207073A CN 116207073 A CN116207073 A CN 116207073A CN 202211508646 A CN202211508646 A CN 202211508646A CN 116207073 A CN116207073 A CN 116207073A
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- integrated circuit
- circuit die
- interposer
- electronic package
- solder
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- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Abstract
本公开涉及一种在集成电路管芯之间具有内插器的电子封装件。至少一个内部电容器(例如,单层电容器)安装到所述内插器。所述电子封装件进一步包含机械地耦合到金属基底的输入无源电路衬底和输出无源电路衬底。使用将同时与各集成电路管芯焊料附接的内插器提供改善电子封装件(例如,使用环氧树脂和层压内插器的封装件)的线性性能和/或宽视频带宽的配置。此外,此类配置有助于大量地高效制造电子封装件。
Description
技术领域
本发明涉及集成电路(IC)的封装。具体地说,本发明涉及一种在集成电路管芯之间具有内插器的电子封装件。
背景技术
无线通信需求通常要求较高的操作频率、增加的操作功率、较宽的操作和视频带宽和/或较高阶调制方案等。功率放大器是这些系统中的重要集成电路(IC)。同时需要功率放大器的更多带宽、输出功率和线性是竞争性要求。另外,封装在满足这些要求的功率放大器中起关键作用。例如,性能可能受取决于电容器相对于IC的放置的接合线长度影响。
发明内容
本公开的实施例涉及一种在集成电路管芯之间具有内插器的电子封装件。至少一个内部电容器(例如,单层电容器)安装到所述内插器。所述电子封装件进一步包含机械地耦合到金属基底的输入无源电路衬底和输出无源电路衬底。使用将同时与各集成电路管芯焊料附接的内插器提供改善电子封装件(例如,使用环氧树脂和层压内插器的封装件)的线性性能和/或宽视频带宽的配置。此外,此类配置有助于大量地高效制造电子封装件。
本公开的一个实施例涉及一种电子封装件。所述电子封装件包含:金属基底;焊料,其耦合到金属基底;第一集成电路管芯,其通过焊料耦合到金属基底;第二集成电路管芯,其通过焊料耦合到金属基底;以及内插器,其通过焊料耦合到金属基底。内插器位于第一集成电路管芯与第二集成电路管芯之间。所述电子封装件进一步包含安装到内插器的至少一个内部电容器。所述电子封装件进一步包含机械地耦合到金属基底的输入无源电路衬底,以及机械地耦合到金属基底的输出无源电路衬底。第一集成电路管芯、第二集成电路管芯和内插器的至少一部分位于输入无源电路衬底与输出无源电路衬底之间。
本公开的另一实施例涉及一种制造电子封装件的方法。所述方法包含将焊料施加到金属基底。所述方法进一步包含将第一集成电路管芯、第二集成电路管芯和内插器定位在焊料上。内插器位于第一集成电路管芯与第二集成电路管芯之间。内插器包含至少一个内部电容器。所述方法进一步包含将输入无源电路衬底和输出无源电路衬底耦合到金属基底。第一集成电路管芯、第二集成电路管芯和内插器的至少一部分位于输入无源电路衬底与输出无源电路衬底之间。所述方法进一步包含加热焊料以将第一集成电路管芯、第二集成电路管芯和内插器耦合到金属基底。
本领域技术人员在阅读以下对于优选实施例的具体说明以及相关的附图后,将会认识到本公开的范围并且了解其另外的方面。
附图说明
并入本说明书中并形成本说明书的一部分的附图示出了本公开的若干方面,并且与描述内容一起用以解释本公开的原理。
图1A是电子封装件(例如,电子封装件)的顶部透视分解视图。
图1B是图1A的电子封装件的横截面侧视图。
图2A是有内插器位于两个集成电路管芯之间的电子封装件的分解视图。
图2B是图2A的电子封装件的俯视图。
图2C是图2A的电子封装件的一部分的横截面侧视图。
图2D是图2A的电子封装件的另一部分的横截面侧视图。
图3A是图2A-2D的内插器的俯视图。
图3B是图3A的内插器的侧视图。
图4是用于制造图2A-2D的电子封装件的对准工具的俯视图。
图5是标识用于制造图2A-2D的电子封装件的方法的步骤的流程图。
具体实施方式
下文阐述的实施例表示使本领域技术人员能够实践实施例并说明实践实施例的最佳模式所必需的信息。在根据附图阅读以下描述时,本领域技术人员将理解本公开的概念,并将认识到这些概念在此未特别述及的应用。应理解,这些概念和应用落入本公开和所附权利要求的范围内。
应理解,尽管本文中可以使用术语第一、第二等来描述各种元件,但这些元件不应受这些术语限制。这些术语仅用于区分一个元件与另一个元件。例如,在不脱离本公开的范围的情况下,第一元件可以被称为第二元件,并且类似地,第二元件可以被称为第一元件。如本文所用,术语“和/或”包含相关联所列项目中的一个或多个项目的任何和所有组合。
还应理解,当元件被称为“连接”或“耦合”到另一元件时,其可以直接连接或耦合到另一元件,或者可以存在中间元件。相反,当元件被称为“直接连接”或“直接耦合”到另一元件时,不存在中间元件。
应理解,尽管本文中可使用术语“上部”、“下部”、“底部”、“中间”、“中部”、“顶部”等来描述各个元件,但这些元件不应受这些术语限制。这些术语仅用于区分一个元件与另一个元件。例如,在不脱离本公开的范围的情况下,第一元件可以被称为“上部”元件,并且类似地,第二元件可以被称为“上部”元件,这取决于这些元件的相对定向。
本文所用的术语仅用于描述特定实施例的目的,并且不旨在限制本公开。如本文所用,除非上下文另外明确指示,否则单数形式“一(a/an)”和“所述”也旨在包含复数形式。还应理解,当在本文中使用时,项“包括(comprises/comprising)”和/或包含(includes/including)指定存在所述特征、整数、步骤、操作、元件和/或部件,但不排除存在或添加一个或多个其它特征、整数、步骤、操作、元件、部件和/或它们的群组。
除非另外定义,否则本文使用的所有术语(包含技术和科学术语)具有与本公开所属领域的普通技术人员通常理解的相同含义。应进一步理解,本文所使用的术语应被解释为具有与其在本说明书和相关领域的上下文中的含义一致的含义,并且除非本文中明确地如此定义,否则将不会在理想化的或过度正式的意义上进行解释。
本公开的实施例涉及一种在集成电路管芯之间具有内插器的电子封装件。至少一个内部电容器(例如,单层电容器)安装到所述内插器。所述电子封装件进一步包含机械地耦合到金属基底的输入无源电路衬底和输出无源电路衬底。使用将同时与各集成电路管芯焊料附接的内插器提供改善电子封装件(例如,使用环氧树脂和层压内插器的封装件)的线性性能和/或宽视频带宽的配置。此外,此类配置有助于大量地高效制造电子封装件。
在深入研究本公开的各个方面的具体细节之前,提供本公开的示例性电子封装件中可包含的各种元件的概述。具体地说,图1A-1B是电子封装件100(也可以被称为半导体封装件100)的视图。
电子封装件100可包含载体102(也可以被称为基底)。在某些实施例中,载体102可足够刚性,以便防止耦合到其上的任何部件发生不合需要的挠曲。另外,载体102可包含适合于接收例如螺钉或销等紧固构件的多个孔104。孔104可以允许电子封装件100附连到主机装置或系统,例如射频(RF)系统。载体102可以由导电材料、导热材料或非导电材料形成。在某些实施例中,载体102可包含金属、金属合金、陶瓷、金刚石、铜、钨、钨-铜(W-Cu)和/或铜-钼-铜(Cu-Mo-Cu)。在其它实施例中,载体102可以例如用导电材料(例如,金)镀覆。
电子封装件100可包含环结构106(也可以被称为信号承载部件、环框架等),其可以是印刷电路板(PCB)、层压板、衬底、印刷电路板、柔性电路、电介质(例如,软电介质)和/或包括导电通路的另一类似部件。环结构106可以例如通过粘合剂材料(例如,环氧树脂)、焊接、压力接合和/或温度接合耦合到载体102。在某些实施例中,用于将环结构106附接到载体102的粘合剂材料可以是导电的,例如导电环氧树脂预制棒。
环结构106具有穿过其中的开口108。在某些实施例中,环结构106可具有多个外部衬垫110,其可由导电材料(例如,铜)制成。外部衬垫110可适于具有一个或多个部件(例如,有源和/或无源部件)和/或附接到其的引线(例如,经由焊接)。互连件112可以例如通过常规的带或线接合技术附接到环结构106的外部衬垫110。
电子封装件100可包含一个或多个引线114、116。在一些实施例中,环结构106可以耦合到一个或多个引线114、116,所述一个或多个引线携带通过电子封装件100的信号。电子封装件100可包含位于电子封装件100的第一侧(例如,输入侧)的输入侧引线114(例如,以接收RF输入信号)。输出侧引线116是位于电子封装件100的第二侧(例如,输出侧)的引线,电子封装件100可在所述引线上将输出信号提供到外部电路/系统。输入侧引线114和/或输出侧引线116中的每一个可由例如铜的金属或金属合金形成。多个引线114、116可以被调谐、定位和/或具有不同大小以执行不同的信号携带和/或路由功能。其它实施例还可以在封装件的顶部和底部具有引线。
电子封装件100可包含附接到载体102且安置在环结构106的开口108中的一个或多个管芯118和/或一个或多个电子部件120,使得环结构106包围至少一个管芯118和/或电子部件120。管芯118和/或电子部件120可经由焊料128(例如,金-锡或其它合金)和/或另一管芯附接件机械地耦合到载体102。
环结构106可通过互连件112电耦合到管芯118。管芯118可具有在其上制造的功能电路。管芯118可包含砷化镓(GaAs)、氮化镓(GaN)等。管芯118可以使用任何合适的材料,例如金-锡(AuSn)或另一种合金进行附接。在某些实施例中,管芯118包含在管芯118的顶表面上的管芯衬垫124,所述管芯衬垫中的每一个经由例如电线或带接合件的互连件112连接到对应连接迹线126。连接迹线126和管芯衬垫124可以由例如铜的任何适当导电材料形成。
一个或多个电子部件120可以直接附接到载体102,和/或附接到环结构106。一个或多个电子部件120可包含有源部件(例如,晶体管、二极管等)和/或无源部件(例如,电阻器、电容器、电感器、变压器等)。电子部件120中的一个或多个可经由互连件112中的一个或多个电耦合到环结构106。
盖130可具有顶壁132和附接到环结构106的多个侧壁134。因此,载体102、环结构106、输入侧引线114、输出侧引线116和盖130可以将管芯118和电子部件120包封在电子封装件100中。盖130可以由塑料、塑料复合材料、金属、金属合金和/或陶瓷等形成。盖130可以例如通过粘合剂材料(例如,环氧树脂、树脂、丙烯酸和/或硅酮)耦合到环结构106的顶表面(例如,与环结构106的耦合到载体102的表面相对的表面)。在某些实施例中,用于将盖130附接到环结构106的粘合剂材料可以是非导电的。可以形成密封环,作为由电子封装件100提供的外壳的一部分,例如以保护由载体102、环结构106和盖130的组合密封的元件(例如,管芯、有源部件和/或无源部件)。
图2A-2D是有内插器200(例如,焊料兼容)位于两个半导体管芯118(1)、118(2)之间(例如,焊料兼容)的电子封装件100'的视图。具体地说,在某些实施例中,电子封装件100'是用以处置射频(RF)功率的RF封装件。电子封装件100'包含金属基底102和耦合到金属基底102的焊料128。焊料128可包含一个或多个焊料片,所述焊料片是焊料薄层,并且可以彼此分离。焊料128可以放置在金属基底102上的特定位置处以将一个或多个电子部件120机械地耦合、电耦合和/或热耦合到金属基底102。在某些实施例中,焊料128包含金-锡。在某些实施例中,焊料128仅由金-锡组成。
电子封装件100'包含通过焊料128耦合到金属基底的第一集成电路管芯118(1)和第二集成电路管芯118(2)。在某些实施例中,第一集成电路管芯118(1)和/或第二集成电路管芯118(2)包含单块微波集成电路(MMIC),所述MMIC可具有50μm到100μm的厚度。在某些实施例中,第一集成电路管芯118(1)和第二集成电路管芯118(2)通过金-锡(AuSn)真空回流焊来附接,所述真空回流焊用于处置集成电路管芯118(1)、118(2)(例如,GaN管芯)的高热温度,和/或因此电子封装件100'的管芯附接件经受温度循环鉴定。
内插器200通过焊料128耦合到金属基底102。具体地说,内插器200可以在与集成电路管芯118(1)、118(2)相同的组装步骤期间耦合到金属基底102,并且内插器200与集成电路管芯118(1)、118(2)之间的空间减到最小。例如,内插器200可以接触集成电路管芯118(1)、118(2)中的一个或两个,或者仅由于机械公差而具有小间隙。内插器200位于第一集成电路管芯118(1)与第二集成电路管芯118(2)之间。内插器200是在电子部件(例如,电容器和集成电路管芯118(1)、118(2))之间路由的电接口。
内部电容器202(1)、202(2)(例如,单层电容器)安装在内插器200上。具体地说,第一组内部电容器202(1)通过接合线204(1)电耦合到第一集成电路管芯118(1)。类似地,第二组内部电容器202(2)通过接合线204(2)电耦合到第二集成电路管芯118(2)。在某些实施例中,第一接合线204(1)和/或第二接合线204(2)的长度小于20mm。通常,第一组内部电容器202(1)沿着第一集成电路管芯118(1)的内边缘206(1)成行定位,并且第二组内部电容器202(2)沿着第二集成电路管芯118(2)的内边缘206(2)成行定位。此类配置减小内部电容器202(1)、202(2)与相应集成电路管芯118(1)、118(2)之间的电距离,这改善了电子封装件100'的性能。相比之下,例如,邻近相应集成电路管芯118(1)、118(2)的输入边缘208(1)、208(2)定位内部电容器202(1)、202(2)由于内部电容器202(1)、202(2)的接合线必须跨越集成电路管芯118(1)、118(2)的内边缘206(1)、206(2)延伸而增加电距离,这对电子封装件100'的性能造成负面影响。
使用内插器200减小内部电容器202(1)、202(2)与相应集成电路管芯118(1)、118(2)之间的距离。与其它安装方法相比,内插器200可以定位成接近集成电路管芯118(1)、118(2),而不会对内部电容器202(1)、202(2)的性能造成负面影响。例如,内插器200可以通过焊料附接,并且在集成电路管芯118(1)、118(2)的约0.005英寸(例如,0.0015)内。此标称间距通常被认为是不受控制的,使得内插器200甚至可以直接接触第一集成电路管芯118(1)和/或第二集成电路管芯118(2)。因此,此类配置减小内部电容器202(1)、202(2)与集成电路管芯118(1)、118(2)之间的接合线204(1)、204(2)的接合线距离,从而改善电子封装件100'的线性性能(例如,互调、邻近信道功率比、噪声功率比等)和/或视频带宽。
相比之下,例如,如果内部电容器202(1)、202(2)通过环氧树脂直接安装到金属基底102,则内部电容器202(1)、202(2)与相应集成电路管芯118(1)、118(2)之间需要更大的距离,以防止内部电容器202(1)、202(2)的焊料128干扰集成电路管芯118(1)、118(2)的焊料128。
外部电容器210(1)、210(2)通过环氧树脂或焊料128附接到金属基底102。具体地说,第一组外部电容器210(1)通过接合线204(1)电耦合到第一集成管芯118(1)。第一集成电路管芯118(1)位于内部电容器202(1)与第一外部电容器210(1)之间。第二组外部电容器210(2)通过接合线204(2)电耦合到第二集成管芯118(2)。第二集成电路管芯118(2)位于内部电容器202(2)与第二外部电容器210(2)之间。
内部电容器202(1)、202(2)和外部电容器210(1)、210(2)的至少一部分包含单层电容器。替代地,可以使用标准表面安装装置(SMD)电容器,例如与集成电路管芯118(1)、118(2)周围的层压PCB材料一起使用。然而,单层电容器(SLC)通常比SMD电容器更薄且具有更少的寄生效应。因此,除了短接合线204(1)、204(2)之外,单层电容器与SMD电容器相比提供更好的线性性能和/或视频带宽。
输入无源电路衬底212(也可以被称为输入薄膜网络(TFN))和输出无源电路衬底214(也可以被称为输出薄膜网络(TFN))机械地耦合到金属基底102。第一集成电路管芯118(1)、第二集成电路管芯118(2)和内插器200的至少一部分位于输入无源电路衬底212与输出无源电路衬底214之间。在某些实施例中,电子封装件100'在内插器200与第一集成电路管芯118(1)之间和/或在内插器200与第二集成电路管芯118(2)之间不含焊料128。
如上文所指出,此类配置改善电子封装件100'的线性,这对于放大器的操作可能尤其重要。放大器的线性通常是电子封装件100'的总体线性性能的限制因素,且因此也是电子封装件100'的最大数据速率的限制因素。线性可以在频率通带上指定,例如在MHz范围(例如,视频带宽(VBW))内。例如,LTE放大器可以具有2.4GHz的操作通带频率,并且在2.4GHz下通过的信号可以具有5MHz的VBW。对于高性能系统(例如,卫星、数据链路),VBW要求可以在GHz范围(例如,4GHz)内。为了实现宽频率范围的线性性能,电子部件与集成电路管芯分离变得越来越重要(例如,基带终端)。
邻近集成电路管芯118(1)、118(2)的内部电容器202(1)、202(2)和外部电容器210(1)、210(2)抑制来自电源的数字噪声并提供基带终端。理想的基带终端为不具有寄生效应(除了所述电容器的预期电容之外不具有额外电阻(R)、电感(L)或电容(C))的电容器,并且紧邻旁路产品放置。额外R、L和C降低电子封装件100'的VBW性能。具体地说,紧邻集成电路管芯118(1)、118(2)接合的旁路电容器线提供改善的性能(以减小接合线204(1)、204(2)的长度)。
在某些实施例中,输入无源电路衬底212、输出无源电路衬底214、层压环结构106和/或盖130通过粘合剂机械地耦合到金属基底102。
图3A-3B是图2A-2D的内插器200的视图。内插器200包含第一导电层300(也可以被称为第一镀层)、第二导电层302(也可以被称为第二镀层)、位于第一导电层300与第二导电层302之间的电介质层304,以及在第一导电层300与第二导电层302之间延伸的导电通孔306(例如,金属通孔)。导电通孔306提供电接地,与焊料附接兼容(与环氧树脂相比),并且可以使组件壳体(例如,氧化铝组件壳体)的产率最大化。在某些实施例中,第二导电层302是焊料兼容的(例如,AuSn焊料)。
图4是用于制造图2A-2D的电子封装件100'的对准工具400的俯视图。对准工具400限定腔402以接收第一集成电路管芯118(1)、第二集成电路管芯118(2)、内插器200、输入无源电路衬底212和/或输出无源电路衬底214,以及其它电子部件120。还设置有盖404以覆盖腔402并将电子部件120包封在其中。对准工具400被配置成在焊料回流焊期间将电子部件120保持在适当位置。由于需要小尺寸和公差,对准工具400可不被配置成在没有内插器200的情况下将内部电容器202(1)、202(2)保持在适当位置。替代地,内插器200允许第一集成电路管芯118(1)、第二集成电路管芯118(2)、内插器200、输入无源电路衬底212和/或输出无源电路衬底214在回流焊(例如,AuSn回流焊)期间同时组装为单个单元。然后,外部电容器210(1)、210(2)可以附接(例如,经由环氧树脂)在内插器200上。以此方式,接合线204(1)、204(2)之间的空间减小,从而提高性能(例如,RF性能)。内插器200(例如,氧化铝内插器)防止焊料(例如,AuSn)芯吸上内插器200的侧面(例如,与金属垫片相比)。
图5是标识用于制造电子封装件100'的方法的步骤的流程图1000。所述方法包含例如通过使用对准工具400将焊料128(例如,预制棒、预制棒件等)施加到金属基底102(1002)。所述方法进一步包含将第一集成电路管芯118(1)、第二集成电路管芯118(2)和内插器200定位在焊料128上(1004)。内插器200位于第一集成电路管芯118(1)与第二集成电路管芯118(2)之间。内插器200包含至少一个内部电容器202(1)、202(2)。
所述方法进一步包含将输入无源电路衬底212和输出无源电路衬底214耦合到金属基底102(1006)。第一集成电路管芯118(1)、第二集成电路管芯118(2)和内插器200的至少一部分位于输入无源电路衬底212与输出无源电路衬底214之间。所述方法进一步包含加热焊料128以将第一集成电路管芯118(1)、第二集成电路管芯118(2)和内插器200耦合到金属基底102(1008)。
在某些实施例中,第一集成电路管芯118(1)、第二集成电路管芯118(2)和内插器200位于对准工具400的腔402内。
本领域的技术人员将认识到对本公开的优选实施例的改进和修改。所有此类改进和修改都被认为是在本文所公开的概念和以下权利要求的范围内。
Claims (20)
1.一种电子封装件,其包括:
金属基底;
焊料,所述焊料耦合到所述金属基底;
第一集成电路管芯,所述第一集成电路管芯通过所述焊料耦合到所述金属基底;
第二集成电路管芯,所述第二集成电路管芯通过所述焊料耦合到所述金属基底;
内插器,所述内插器通过所述焊料耦合到所述金属基底,所述内插器位于所述第一集成电路管芯与所述第二集成电路管芯之间;
至少一个内部电容器,所述至少一个内部电容器安装到所述内插器;
输入无源电路衬底,所述输入无源电路衬底机械地耦合到所述基底;以及
输出无源电路衬底,所述输出无源电路衬底机械地耦合到所述基底;
其中所述第一集成电路管芯、所述第二集成电路管芯和所述内插器的至少一部分位于所述输入无源电路衬底与所述输出无源电路衬底之间。
2.根据权利要求1所述的电子封装件,其中所述焊料包括金-锡。
3.根据权利要求1所述的电子封装件,其中所述焊料由金-锡组成。
4.根据权利要求1所述的电子封装件,其中所述焊料包括焊料片。
5.根据权利要求1所述的电子封装件,其中所述焊料包括彼此分离的多个焊料片。
6.根据权利要求1所述的电子封装件,其中所述第一集成电路管芯包括第一单块微波集成电路MMIC,并且所述第二集成电路管芯包括第二MMIC。
7.根据权利要求1所述的电子封装件,其中所述内插器进一步包括:
第一导电层;
第二导电层;
电介质层,所述电介质层位于所述第一导电层与所述第二导电层之间;以及
至少一个导电通孔,所述至少一个导电通孔在所述第一导电层与所述第二导电层之间延伸。
8.根据权利要求1所述的电子封装件,其中所述电子封装件在以下两者之间不含焊料:
在所述内插器与所述第一集成电路管芯之间;以及
在所述内插器与所述第二集成电路管芯之间。
9.根据权利要求1所述的电子封装件,其中所述至少一个内部电容器包括:
第一组第一多个内部电容器,所述第一组第一多个内部电容器电耦合到所述第一集成电路管芯,以及
第二组第二多个内部电容器,所述第二组第二多个内部电容器电耦合到所述第二集成电路管芯。
10.根据权利要求9所述的电子封装件,
其中所述第一多个内部电容器中的每一个通过第一接合线电耦合到所述第一集成电路管芯;
其中所述第二多个内部电容器中的每一个通过第二接合线电耦合到所述第二集成电路管芯;并且
其中所述第一接合线和所述第二接合线的长度小于20mm。
11.根据权利要求1所述的电子封装件,其中至少一个内部电容器包括单层电容器SLC。
12.根据权利要求1所述的电子封装件,其中所述输入无源电路衬底和所述输出无源电路衬底通过粘合剂机械地耦合到所述金属基底。
13.根据权利要求1所述的电子封装件,其进一步包括:
至少一个第一外部电容器,所述至少一个第一外部电容器接近所述第一集成电路管芯,所述第一集成电路管芯位于所述至少一个内部电容器与所述至少一个第一外部电容器之间;以及
至少一个第二外部电容器,所述至少一个第二外部电容器接近所述第二集成电路管芯,所述第二集成电路管芯位于所述至少一个内部电容器与所述至少一个第二外部电容器之间。
14.根据权利要求1所述的电子封装件,其进一步包括:
层压环结构,所述层压环结构通过环氧树脂耦合到所述金属基底;以及
盖,所述盖通过环氧树脂耦合到所述层压环结构。
15.一种制造电子封装件的方法,其包括:
将焊料施加到金属基底;
将第一集成电路管芯、第二集成电路管芯和内插器定位在所述焊料上,所述内插器位于所述第一集成电路管芯与所述第二集成电路管芯之间,并且将至少一个内部电容器安装到所述内插器;
将输入无源电路衬底和输出无源电路衬底耦合到所述基底,所述第一集成电路管芯、所述第二集成电路管芯和所述内插器的至少一部分位于所述输入无源电路衬底与所述输出无源电路衬底之间;以及
加热所述焊料以将所述第一集成电路管芯、所述第二集成电路管芯和所述内插器耦合到所述金属基底。
16.根据权利要求15所述的方法,其中定位所述第一集成电路管芯、所述第二集成电路管芯和所述内插器包括:
将所述第一集成电路管芯、所述第二集成电路管芯和所述内插器定位在对准工具的腔内。
17.根据权利要求15所述的方法,其中所述焊料包括金-锡。
18.根据权利要求15所述的方法,其中所述内插器进一步包括:
第一导电层;
第二导电层;
电介质层,所述电介质层位于所述第一导电层与所述第二导电层之间;以及
至少一个导电通孔,所述至少一个导电通孔在所述第一导电层与所述第二导电层之间延伸。
19.根据权利要求15所述的方法,其中在加热之后,所述电子封装件在以下两者之间不含焊料:
在所述内插器与所述第一集成电路管芯之间;以及
在所述内插器与所述第二集成电路管芯之间。
20.根据权利要求15所述的方法,其中所述至少一个内部电容器包括:
第一组第一多个内部电容器,所述第一组第一多个内部电容器电耦合到所述第一集成电路管芯;以及
第二组第二多个内部电容器,所述第二组第二多个内部电容器电耦合到所述第二集成电路管芯。
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