CN116134567B - 电解电容器用电极箔和电解电容器 - Google Patents
电解电容器用电极箔和电解电容器Info
- Publication number
- CN116134567B CN116134567B CN202180060465.4A CN202180060465A CN116134567B CN 116134567 B CN116134567 B CN 116134567B CN 202180060465 A CN202180060465 A CN 202180060465A CN 116134567 B CN116134567 B CN 116134567B
- Authority
- CN
- China
- Prior art keywords
- metal
- region
- metals
- atomic
- content
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/055—Etched foil electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
- H01G9/045—Electrodes or formation of dielectric layers thereon characterised by the material based on aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/07—Dielectric layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G2009/05—Electrodes or formation of dielectric layers thereon characterised by their structure consisting of tantalum, niobium, or sintered material; Combinations of such electrodes with solid semiconductive electrolytes, e.g. manganese dioxide
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020130968 | 2020-07-31 | ||
| JP2020-130968 | 2020-07-31 | ||
| PCT/JP2021/026540 WO2022024772A1 (ja) | 2020-07-31 | 2021-07-15 | 電解コンデンサ用電極箔および電解コンデンサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116134567A CN116134567A (zh) | 2023-05-16 |
| CN116134567B true CN116134567B (zh) | 2026-04-03 |
Family
ID=80036377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180060465.4A Active CN116134567B (zh) | 2020-07-31 | 2021-07-15 | 电解电容器用电极箔和电解电容器 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12494327B2 (https=) |
| JP (1) | JPWO2022024772A1 (https=) |
| CN (1) | CN116134567B (https=) |
| WO (1) | WO2022024772A1 (https=) |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003224036A (ja) * | 2002-01-31 | 2003-08-08 | Japan Carlit Co Ltd:The | 電解コンデンサ用アルミニウム陽極箔及びその製造方法 |
| JP4297721B2 (ja) * | 2003-04-16 | 2009-07-15 | 昭和電工株式会社 | 電解コンデンサ電極用アルミニウム材の製造方法 |
| US20050252449A1 (en) | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
| WO2006014753A1 (en) * | 2004-07-23 | 2006-02-09 | Sundew Technologies, Llp | Capacitors with high energy storage density and low esr |
| JP2006310493A (ja) * | 2005-04-27 | 2006-11-09 | Nippon Steel Corp | コンデンサ用電極箔 |
| US7491246B2 (en) | 2006-03-31 | 2009-02-17 | Medtronic, Inc. | Capacitor electrodes produced with atomic layer deposition for use in implantable medical devices |
| JP2008198984A (ja) | 2007-01-19 | 2008-08-28 | Sanyo Electric Co Ltd | ニオブ固体電解コンデンサ及びその製造方法 |
| US20080174939A1 (en) | 2007-01-19 | 2008-07-24 | Sanyo Electric Co., Ltd. | Niobiuim solid electrolytic capacitor and fabrication method thereof |
| JP4973229B2 (ja) * | 2007-02-19 | 2012-07-11 | 富士通株式会社 | 電解コンデンサおよびその製造方法 |
| JP2008288561A (ja) * | 2007-04-20 | 2008-11-27 | Sanyo Electric Co Ltd | ニオブ固体電解コンデンサ及びその製造方法 |
| US10312077B2 (en) | 2015-10-08 | 2019-06-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming aluminum-containing dielectric layer |
| WO2017154461A1 (ja) * | 2016-03-10 | 2017-09-14 | パナソニックＩｐマネジメント株式会社 | 電極箔の製造方法および電解コンデンサの製造方法 |
| JP6735510B2 (ja) * | 2016-03-25 | 2020-08-05 | パナソニックＩｐマネジメント株式会社 | 電解コンデンサ |
| WO2018180029A1 (ja) * | 2017-03-30 | 2018-10-04 | パナソニックＩｐマネジメント株式会社 | 電極および電解コンデンサ並びにそれらの製造方法 |
-
2021
- 2021-07-15 JP JP2022540163A patent/JPWO2022024772A1/ja active Pending
- 2021-07-15 CN CN202180060465.4A patent/CN116134567B/zh active Active
- 2021-07-15 WO PCT/JP2021/026540 patent/WO2022024772A1/ja not_active Ceased
- 2021-07-15 US US18/003,692 patent/US12494327B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US12494327B2 (en) | 2025-12-09 |
| US20230274890A1 (en) | 2023-08-31 |
| WO2022024772A1 (ja) | 2022-02-03 |
| CN116134567A (zh) | 2023-05-16 |
| JPWO2022024772A1 (https=) | 2022-02-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |