CN116097456A - 单光子雪崩二极管、图像传感器及电子设备 - Google Patents

单光子雪崩二极管、图像传感器及电子设备 Download PDF

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Publication number
CN116097456A
CN116097456A CN202080104210.9A CN202080104210A CN116097456A CN 116097456 A CN116097456 A CN 116097456A CN 202080104210 A CN202080104210 A CN 202080104210A CN 116097456 A CN116097456 A CN 116097456A
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China
Prior art keywords
doped region
single photon
avalanche diode
photon avalanche
groove structure
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Pending
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CN202080104210.9A
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章健
曹均凯
余力强
李云涛
程文譞
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Publication of CN116097456A publication Critical patent/CN116097456A/zh
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

本申请提供了一种单光子雪崩二极管、图像传感器及电子设备,涉及光电技术领域,能够在降低因电子载流子的横向漂移引起的jitter的同时,提高SPAD的量子效率。该单光子雪崩二极管包括:半导体光电转换结构;半导体光电转换结构包括依次设置的第一掺杂区、第二掺杂区、第三掺杂区;该单光子雪崩二极管还包括:设置在第三掺杂区的入光侧的陷光结构;陷光结构的投影位于第一掺杂区内;陷光结构包括中间凹槽结构和边缘凹槽结构;边缘凹槽结构位于中间凹槽结构的四周,且边缘凹槽结构的深度大于中间凹槽结构的深度。

Description

PCT国内申请,说明书已公开。

Claims (14)

  1. PCT国内申请,权利要求书已公开。
CN202080104210.9A 2020-10-16 2020-10-16 单光子雪崩二极管、图像传感器及电子设备 Pending CN116097456A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2020/121558 WO2022077456A1 (zh) 2020-10-16 2020-10-16 单光子雪崩二极管、图像传感器及电子设备

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CN116097456A true CN116097456A (zh) 2023-05-09

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CN202080104210.9A Pending CN116097456A (zh) 2020-10-16 2020-10-16 单光子雪崩二极管、图像传感器及电子设备

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CN (1) CN116097456A (zh)
WO (1) WO2022077456A1 (zh)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109659374A (zh) * 2018-11-12 2019-04-19 深圳市灵明光子科技有限公司 光电探测器、光电探测器的制备方法、光电探测器阵列和光电探测终端
CN109659377B (zh) * 2018-12-13 2024-04-16 深圳市灵明光子科技有限公司 单光子雪崩二极管及制作方法、探测器阵列、图像传感器

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