CN116097456A - 单光子雪崩二极管、图像传感器及电子设备 - Google Patents
单光子雪崩二极管、图像传感器及电子设备 Download PDFInfo
- Publication number
- CN116097456A CN116097456A CN202080104210.9A CN202080104210A CN116097456A CN 116097456 A CN116097456 A CN 116097456A CN 202080104210 A CN202080104210 A CN 202080104210A CN 116097456 A CN116097456 A CN 116097456A
- Authority
- CN
- China
- Prior art keywords
- doped region
- single photon
- avalanche diode
- photon avalanche
- groove structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 46
- 238000006243 chemical reaction Methods 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims description 16
- 238000002955 isolation Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000031700 light absorption Effects 0.000 claims description 5
- 108091006149 Electron carriers Proteins 0.000 abstract description 4
- 230000005622 photoelectricity Effects 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 description 23
- 230000003287 optical effect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- -1 al 2 O 3 Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002600 positron emission tomography Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
本申请提供了一种单光子雪崩二极管、图像传感器及电子设备,涉及光电技术领域,能够在降低因电子载流子的横向漂移引起的jitter的同时,提高SPAD的量子效率。该单光子雪崩二极管包括:半导体光电转换结构;半导体光电转换结构包括依次设置的第一掺杂区、第二掺杂区、第三掺杂区;该单光子雪崩二极管还包括:设置在第三掺杂区的入光侧的陷光结构;陷光结构的投影位于第一掺杂区内;陷光结构包括中间凹槽结构和边缘凹槽结构;边缘凹槽结构位于中间凹槽结构的四周,且边缘凹槽结构的深度大于中间凹槽结构的深度。
Description
PCT国内申请,说明书已公开。
Claims (14)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2020/121558 WO2022077456A1 (zh) | 2020-10-16 | 2020-10-16 | 单光子雪崩二极管、图像传感器及电子设备 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN116097456A true CN116097456A (zh) | 2023-05-09 |
Family
ID=81208861
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202080104210.9A Pending CN116097456A (zh) | 2020-10-16 | 2020-10-16 | 单光子雪崩二极管、图像传感器及电子设备 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN116097456A (zh) |
WO (1) | WO2022077456A1 (zh) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109659374A (zh) * | 2018-11-12 | 2019-04-19 | 深圳市灵明光子科技有限公司 | 光电探测器、光电探测器的制备方法、光电探测器阵列和光电探测终端 |
CN109659377B (zh) * | 2018-12-13 | 2024-04-16 | 深圳市灵明光子科技有限公司 | 单光子雪崩二极管及制作方法、探测器阵列、图像传感器 |
-
2020
- 2020-10-16 CN CN202080104210.9A patent/CN116097456A/zh active Pending
- 2020-10-16 WO PCT/CN2020/121558 patent/WO2022077456A1/zh active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2022077456A1 (zh) | 2022-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6799705B2 (ja) | 積層背面照射型spadアレイ | |
US20210273120A1 (en) | Photodetectors, preparation methods for photodetectors, photodetector arrays, and photodetection terminals | |
EP2403011B1 (en) | Semiconductor light-detecting element | |
US5365101A (en) | Photo-sensing device | |
US9178100B2 (en) | Single photon avalanche diode for CMOS circuits | |
CN107665886A (zh) | 用于检测红外线辐射的盖革模式雪崩光电二极管阵列 | |
KR102363563B1 (ko) | 반도체 광검출 소자 | |
US10971643B2 (en) | Implementation of an optimized avalanche photodiode (APD)/single photon avalanche diode (SPAD) structure | |
WO2022011701A1 (zh) | 一种单光子雪崩二极管及其制造方法、光检测器件及系统 | |
CN110021617A (zh) | 一种InGaAs雪崩焦平面探测器的串扰抑制结构 | |
KR100987057B1 (ko) | 광검출 효율이 향상된 실리콘 광전자 증배관 및 이를포함하는 감마선 검출기 | |
US10109671B2 (en) | Photodiode array structure for cross talk suppression | |
CN116598369B (zh) | 低噪声单光子探测器及其制备方法 | |
CN116097456A (zh) | 单光子雪崩二极管、图像传感器及电子设备 | |
KR101762431B1 (ko) | 크로스톡 방지 구조를 가지는 실리콘 광전자 증배센서 | |
CN115443545A (zh) | 一种单光子雪崩二极管及其制造方法、光检测器件及系统 | |
CN219677264U (zh) | 沟槽电极单光子雪崩阵列、传感器 | |
KR102653478B1 (ko) | 단일 광자 검출 소자, 전자 장치, 및 라이다 장치 | |
US20240105741A1 (en) | Single photon avalanche diode, electronic device, and lidar device | |
KR101762430B1 (ko) | 이면 조사형 실리콘 광전자 증배센서 및 그 제조방법 | |
KR20240044332A (ko) | 단광자 아발란치 다이오드, 전자 장치, 및 라이다 장치 | |
CN117954511A (zh) | 沟槽电极单光子雪崩阵列、传感器及制备方法 | |
CN117976757A (zh) | 单光子雪崩二极管 | |
CN117894812A (zh) | 单光子雪崩二极管的结构和制备方法 | |
CN111769126A (zh) | 感光像素模块、图像传感器及电子设备 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |