CN116079348A - 一种高分子复合铜箔制备方法 - Google Patents
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Abstract
本发明公开了一种高分子复合铜箔制备方法,属于高分子复合铜箔领域,包括,制作生产高分子复合铜箔所需的铜箔,生产完成的铜箔厚度应在大于12μm而小于70μm;将生产完成且符合厚度要求的铜箔使用剪切设备进行剪切分割;制作厚度为大于12μm而小于120μm的高分子薄膜;将制作完成且厚度符合使用要求的高分子薄膜使用粘结剂粘结在铜箔上或将高分子薄膜直接热压在铜箔上,从而最终形成高分子复合铜箔;在铜箔上未覆盖高分子薄膜一面形成有厚度0.2~3.0μm的锡层;通过将高分子薄膜层的变形行为传递至铜箔,使铜箔、树脂层相同地变形,而使铜箔的收缩不易产生并提高延展性,可防止铜箔破裂,以高分子薄膜层的变形行为传递至铜箔的方式规定高分子薄膜层及铜箔的特性。
Description
技术领域
本发明涉及高分子复合铜箔领域,特别涉及一种高分子复合铜箔制备方法。
背景技术
层叠铜箔与树脂层而成的铜箔复合体是应用于FPC(挠性印刷电路板)、电磁波遮蔽材料、RF-ID(无线IC标签)、面状发热体、及散热体等。例如,在FPC的情况下,在基底树脂层上形成有铜箔的电路,保护电路的覆盖层膜覆盖电路,而成为树脂层/铜箔/树脂层的层叠结构。然而,作为这样的铜箔复合体的加工性,要求以MIT弯曲性为代表的弯折性、以IPC弯曲性为代表的高循环弯曲性,而提出了弯折性或弯曲性优异的铜箔复合体。例如,FPC可在手机的铰链部等可动部弯折,或为谋求电路的小空间化而弯折使用,但作为变形模式,以上述MIT弯曲试验、或IPC弯曲试验为代表那样的单轴弯曲,而不成为苛刻的变形模式的方式进行设计。另外,在将铜箔复合体用于电磁波遮蔽材料等的情况下,成为树脂层/铜箔的层叠结构,要求这样的铜箔复合体的表面发挥耐蚀性及长期稳定的电接点性能。
发明内容
本发明的主要目的在于提供一种高分子复合铜箔制备方法,可以有效解决背景技术中的问题。
为实现上述目的,本发明采取的技术方案为:
一种高分子复合铜箔制备方法,包括以下步骤:
S1:制作生产高分子复合铜箔所需的铜箔,生产完成的铜箔厚度应在大于12μm而小于70μm;
S2:将生产完成且符合厚度要求的铜箔使用剪切设备进行剪切分割;
S3:制作厚度为大于12μm而小于120μm的高分子薄膜;
S4:将制作完成且厚度符合使用要求的高分子薄膜使用粘结剂粘结在铜箔上或将高分子薄膜直接热压在铜箔上,从而最终形成高分子复合铜箔;
S5:在铜箔上未覆盖高分子薄膜一面形成有厚度0.2~3.0μm的锡层;
S6:使用包装设备将制备完成的高分子复合铜箔进行打包入库。
优选的,所述步骤S1中,作为铜箔,可使用压延铜箔、电解铜箔、通过金属化而实现的铜箔等,但优选为通过再结晶而使加工性优异、同时可降低强度的压延铜箔,在铜箔表面形成有用于粘接、防锈的处理层的情况下,也将这些包括在铜箔中而予以考虑。
优选的,所述步骤S3中,高分子薄膜可采用聚对苯二甲酸乙二酯膜、聚萘二甲酸乙二酯、聚酰亚胺膜、液晶聚合物膜及聚丙烯膜。
优选的,所述步骤S4中,若采用粘结剂粘将高分子薄膜粘结在铜箔上,所述粘结剂的厚度应为0.2-20μm。
优选的,所述步骤S5中,在所述锡层与所述铜箔之间形成有镍层或铜层,或者从所述铜箔侧起以镍层、铜层的顺序形成有镍层及铜层。
优选的,所述镍层及所述铜层的厚度分别为0.1~2.0μm。
与现有技术相比,本发明具有如下有益效果:
通过将高分子薄膜层的变形行为传递至铜箔,使铜箔与树脂层相同地变形,从而使铜箔的收缩不易产生并提高延展性,可防止铜箔破裂,从而完成本发明,以高分子薄膜层的变形行为传递至铜箔的方式规定高分子薄膜层及铜箔的特性,进而,为了长时间稳定发挥耐蚀性及电接点性能,而规定铜箔表面的被覆层。
具体实施方式
实施例1:
本发明一种高分子复合铜箔制备方法,包括以下步骤:
第一步:使用压延工艺或电解工艺制作生产高分子复合铜箔所需的铜箔,生产完成的铜箔厚度应在为12μm;
第二步:将生产完成且符合厚度要求的铜箔使用剪切设备进行剪切分割;
第三步:制作厚度为12μm的高分子薄膜,该高分子薄膜可采用聚对苯二甲酸乙二酯膜或聚萘二甲酸乙二酯或聚酰亚胺膜或液晶聚合物膜或聚丙烯膜;
第四步:将制作完成且厚度符合使用要求的高分子薄膜使用粘结剂粘结在铜箔上或将高分子薄膜直接热压在铜箔上,从而最终形成高分子复合铜箔,若采用粘结剂粘将高分子薄膜粘结在铜箔上,粘结剂的厚度应为0.2μm;
第五步:在铜箔上未覆盖高分子薄膜一面形成有厚度0.2μm的锡层,在锡层与铜箔之间形成有镍层或铜层,或者从铜箔侧起以镍层、铜层的顺序形成有镍层及铜层,镍层及铜层的厚度分别为0.1μm;
第六步:使用包装设备将制备完成的高分子复合铜箔进行打包入库。
实施例2:
本发明一种高分子复合铜箔制备方法,包括以下步骤:
第一步:使用压延工艺或电解工艺制作生产高分子复合铜箔所需的铜箔,生产完成的铜箔厚度应在为50μm;
第二步:将生产完成且符合厚度要求的铜箔使用剪切设备进行剪切分割;
第三步:制作厚度为60μm的高分子薄膜,该高分子薄膜可采用聚对苯二甲酸乙二酯膜或聚萘二甲酸乙二酯或聚酰亚胺膜或液晶聚合物膜或聚丙烯膜;
第四步:将制作完成且厚度符合使用要求的高分子薄膜使用粘结剂粘结在铜箔上或将高分子薄膜直接热压在铜箔上,从而最终形成高分子复合铜箔,若采用粘结剂粘将高分子薄膜粘结在铜箔上,粘结剂的厚度应为10μm;
第五步:在铜箔上未覆盖高分子薄膜一面形成有厚度2μm的锡层,在锡层与铜箔之间形成有镍层或铜层,或者从铜箔侧起以镍层、铜层的顺序形成有镍层及铜层,镍层及铜层的厚度分别为1μm;
第六步:使用包装设备将制备完成的高分子复合铜箔进行打包入库。
实施例3:
本发明一种高分子复合铜箔制备方法,包括以下步骤:
第一步:使用压延工艺或电解工艺制作生产高分子复合铜箔所需的铜箔,生产完成的铜箔厚度应在为70μm;
第二步:将生产完成且符合厚度要求的铜箔使用剪切设备进行剪切分割;
第三步:制作厚度为120μm的高分子薄膜,该高分子薄膜可采用聚对苯二甲酸乙二酯膜或聚萘二甲酸乙二酯或聚酰亚胺膜或液晶聚合物膜或聚丙烯膜;
第四步:将制作完成且厚度符合使用要求的高分子薄膜使用粘结剂粘结在铜箔上或将高分子薄膜直接热压在铜箔上,从而最终形成高分子复合铜箔,若采用粘结剂粘将高分子薄膜粘结在铜箔上,粘结剂的厚度应为20μm;
第五步:在铜箔上未覆盖高分子薄膜一面形成有厚度3μm的锡层,在锡层与铜箔之间形成有镍层或铜层,或者从铜箔侧起以镍层、铜层的顺序形成有镍层及铜层,镍层及铜层的厚度分别为2μm;
第六步:使用包装设备将制备完成的高分子复合铜箔进行打包入库。
以上显示和描述了本发明的基本原理和主要特征和本发明的优点。本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是说明本发明的原理,在不脱离本发明精神和范围的前提下,本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。
Claims (6)
1.一种高分子复合铜箔制备方法,其特征在于:包括以下步骤:
S1:制作生产高分子复合铜箔所需的铜箔,生产完成的铜箔厚度应在大于12μm而小于70μm;
S2:将生产完成且符合厚度要求的铜箔使用剪切设备进行剪切分割;
S3:制作厚度为大于12μm而小于120μm的高分子薄膜;
S4:将制作完成且厚度符合使用要求的高分子薄膜使用粘结剂粘结在铜箔上或将高分子薄膜直接热压在铜箔上,从而最终形成高分子复合铜箔;
S5:在铜箔上未覆盖高分子薄膜一面形成有厚度0.2~3.0μm的锡层;
S6:使用包装设备将制备完成的高分子复合铜箔进行打包入库。
2.根据权利要求1所述的一种高分子复合铜箔制备方法,其特征在于,所述步骤S1中,作为铜箔,可使用压延铜箔、电解铜箔、通过金属化而实现的铜箔等,但优选为通过再结晶而使加工性优异、同时可降低强度的压延铜箔,在铜箔表面形成有用于粘接、防锈的处理层的情况下,也将这些包括在铜箔中而予以考虑。
3.根据权利要求1所述的一种高分子复合铜箔制备方法,其特征在于,所述步骤S3中,高分子薄膜可采用聚对苯二甲酸乙二酯膜、聚萘二甲酸乙二酯、聚酰亚胺膜、液晶聚合物膜及聚丙烯膜。
4.根据权利要求1所述的一种高分子复合铜箔制备方法,其特征在于,所述步骤S4中,若采用粘结剂粘将高分子薄膜粘结在铜箔上,所述粘结剂的厚度应为0.2-20μm。
5.根据权利要求4所述的一种高分子复合铜箔制备方法,其特征在于,所述步骤S5中,在所述锡层与所述铜箔之间形成有镍层或铜层,或者从所述铜箔侧起以镍层、铜层的顺序形成有镍层及铜层。
6.根据权利要求1所述的一种高分子复合铜箔制备方法,其特征在于,所述镍层及所述铜层的厚度分别为0.1~2.0μm。
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