CN116045827B - System and method for detecting thickness and bending degree of large-size wafer - Google Patents
System and method for detecting thickness and bending degree of large-size wafer Download PDFInfo
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- CN116045827B CN116045827B CN202310151463.7A CN202310151463A CN116045827B CN 116045827 B CN116045827 B CN 116045827B CN 202310151463 A CN202310151463 A CN 202310151463A CN 116045827 B CN116045827 B CN 116045827B
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- 238000005452 bending Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims description 18
- 235000012431 wafers Nutrition 0.000 claims abstract description 104
- 238000001514 detection method Methods 0.000 claims abstract description 44
- 230000003287 optical effect Effects 0.000 claims abstract description 19
- 230000005540 biological transmission Effects 0.000 claims abstract description 16
- 238000012937 correction Methods 0.000 claims description 3
- 238000007689 inspection Methods 0.000 claims description 3
- 230000005484 gravity Effects 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 4
- 238000003384 imaging method Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000011895 specific detection Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/25—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/255—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures for measuring radius of curvature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
The application provides a detection system and a detection method for thickness and bending degree of a large-size wafer, which belong to the field of wafer detection and comprise a transmission mechanism, a transmission mechanism and a detection mechanism, wherein the transmission mechanism is provided with a transmission belt and is used for transmitting the wafer; the conveying mechanism is provided with a mechanical arm, and the tail end of the mechanical arm is provided with a vacuum chuck and is used for conveying the wafer to be detected from the transmission mechanism to the detection mechanism; the detection mechanism is provided with a bearing structure and an optical detection structure and is used for detecting the thickness and the bending degree of the wafer; the bearing structure comprises a plurality of thin wires and is used for bearing the wafer to be detected; the optical detection structure is provided with a camera and an LCD panel, wherein the camera can rotate by 360 degrees and is used for sequentially rotating by 90 degrees to respectively shoot interference fringe images of 4 wafers to be detected; the LCD panel can project a grating to a wafer to be detected and is also provided with a spectroscope and a controller for realizing wafer detection. The system can reduce bending deformation caused by gravity effect during large-size wafer detection, and has simple structure and easy realization.
Description
Technical Field
The application belongs to the field of wafer detection, and particularly relates to a detection system and method for thickness and bending degree of a large-size wafer.
Background
The wafer is a basic material of a semiconductor chip, the thickness of the wafer and the bending degree of the wafer are important in wafer detection, and the delivery quality of the wafer is related. There are a variety of wafer inspection methods in the prior art, including probe and imaging methods, which typically require the wafer to be placed on a carrier.
However, the wafer itself is weak in rigidity, and the wafer is deformed due to the gravity of the wafer itself. Therefore, some use the three-cancellation method of reference wafer inversion, sample wafer inversion and theoretical modeling to eliminate the effect of gravity. Some use vertical support systems for optical acquisition. Some of the wafers are rotated by a rotation method in the measurement process, so that the influence of gravity on a partial area is eliminated. Some of the wafers are supported by three points, namely, three supporting points are arranged on the edges of the wafers, and the supporting points are in an equilateral triangle and are used for reducing bending caused by edge gravity. However, for large-sized wafers, even with multi-point support, or vertical support, the effect of gravity on the partially unsupported areas still cannot be completely eliminated, which can lead to inaccurate thickness and bow detection of the wafer.
Disclosure of Invention
The present application aims to solve the above-mentioned problems in the prior art and provide a system and a method for detecting thickness and curvature of a large-sized wafer.
The application is realized by the following technical scheme:
a thickness and bow inspection system for large-size wafers, characterized by: comprises a transmission mechanism, a carrying mechanism and a detection mechanism; wherein,
a transfer mechanism having a conveyor belt for transferring the wafer;
the conveying mechanism is provided with a mechanical arm, and the tail end of the mechanical arm is provided with a vacuum chuck and is used for conveying the wafer to be detected from the transmission mechanism to the detection mechanism;
the detection mechanism is provided with a bearing structure and an optical detection structure and is used for detecting the thickness and the bending degree of the wafer;
specifically, the bearing structure comprises a plurality of thin wires which are arranged in parallel and used for bearing the wafer to be detected, wherein the distance between the thin wires is 1.5-2.3 cm;
the optical detection structure is provided with a camera and an LCD panel, wherein the camera can rotate by 360 degrees and is used for sequentially rotating by 90 degrees to respectively shoot interference fringe images of 4 wafers to be detected;
the LCD panel can project a grating to a wafer to be detected.
Preferably, the vacuum chuck has 4 vacuum chucks, 1 of which is used for sucking the center of the wafer, and the other 3 vacuum chucks are used for sucking the edge of the wafer, and are distributed in an equilateral triangle shape. The carrying mechanism is provided with an image recognition unit which is used for recognizing the edge and the circle center of the wafer to be detected by taking the picture of the wafer to be detected, and the vacuum chuck is respectively arranged at the edge and the circle center.
Preferably, the optical detection structure is provided with a controller, a camera, an LCD panel and a spectroscope, wherein the controller is electrically connected with the LCD panel, and is used for controlling the grating shape displayed on the LCD and receiving image data acquired by the camera; the spectroscope is obliquely arranged relative to the wafer to be detected, the LCD panel is vertically arranged relative to the wafer to be detected, and the camera is arranged above the spectroscope and is used for shooting interference fringe images of the wafer to be detected. The controller may control the grating displayed by the LCD panel to be a vertical grating or a horizontal grating.
The calculation formula of the curvature of the wafer surface to be detected is as follows:
wherein the curvature along the x-axis direction is
Curvature in the y-axis direction
Wherein,
wherein x, y, x1, x2, y1, y2 are pixel coordinate values, I 0 ，I 90 ，I 180 ，I 270 Interference fringe images shot by cameras at 0 degrees, 90 degrees, 180 degrees and 270 degrees respectively; p is the distance between two interference fringes and takes pixels as a unit; l is the sum of the horizontal distance from the LCD to the center of the spectroscope and the vertical distance from the center of the spectroscope to the wafer to be detected; Δx, Δy is the minimum identifiable pixel distance of the image; a is a correction factor, which is related to camera lens parameters. The calculation formula of the thickness is: t (x, y) =b Φ (x, y) +c; b and c are parameters calibrated in advance by the camera; t (x, y) is the wafer thickness at coordinates (x, y).
The application also relates to a method for detecting the thickness and the bending degree of the large-size wafer, which is realized by adopting the detection system, and the operation method comprises the following steps:
step 1: the transmission mechanism conveys the wafer to be detected to a designated position;
step 2: the carrying mechanism adopts a vacuum chuck to carry the wafer to be detected to the bearing table;
step 3: the controller controls the LCD to project the grating, the camera collects images and rotates 90 degrees in sequence to obtain 4 wafer images to be detected;
step 4: and obtaining the curvature and thickness of the wafer to be detected according to the image.
The application also relates to a computer device comprising a processor and a memory storing computer executable instructions executable by the processor, the processor executing the computer executable instructions to implement the above method.
The application also relates to a computer readable storage medium storing computer executable instructions which, when invoked and executed by a processor, cause the processor to implement the above method.
Compared with the prior art, the application has the beneficial effects that: 1. through the support of fine rule, realize the even support to wafer multiposition, the distortion that the gravity of furthest reduces wafer edge region or central region leads to improves the rate of accuracy that detects. 2. The traditional optical interferometry adopts a projector, a CCD camera and the like to carry out optical detection, the system structure is complex, the system calibration is complicated, and the optical detection structure adopted by the application is realized by only adopting an LCD reflector, a beam splitter and a controller, has a simple structure, improves the detection efficiency while ensuring the detection accuracy, and reduces the structural complexity.
Drawings
Fig. 1: the bearing structure in the application.
Fig. 2: the optical detection structure of the application.
Detailed Description
The application is described in further detail below with reference to the attached drawing figures:
the detection system for the thickness and the bending degree of the large-size wafer comprises a transmission mechanism, a detection device and a detection device, wherein the transmission mechanism is provided with a conveyor belt and is used for transmitting the wafer; the conveying mechanism is provided with a mechanical arm, and the tail end of the mechanical arm is provided with a vacuum chuck and is used for conveying the wafer from the conveying mechanism to the detecting mechanism; the detection mechanism is provided with a bearing structure and an optical detection structure and is used for detecting the thickness and the bending degree of the wafer; as shown in fig. 1, the carrying structure of the present application includes a plurality of parallel thin lines for carrying a wafer to be inspected, and by equally spacing the thin lines, a stable support can be provided for the wafer, so as to effectively prevent unnecessary bending of the wafer due to gravity effect. During operation, the transmission mechanism conveys the wafer to be detected to a designated position; then, the handling mechanism moves to the transmission structure, the circle center and the edge area of the wafer to be detected are identified by shooting the image of the wafer to be detected, 4 vacuum chucks are arranged at the tail end of the mechanical arm, 1 vacuum chuck is used for adsorbing the center of the wafer, and the other 3 vacuum chucks are used for adsorbing the edge of the wafer and are distributed in an equilateral triangle. The carrying mechanism is used for respectively arranging the 4 vacuum chucks at the circle center and the edge of the wafer to be detected and carrying the wafer to be detected to the bearing structure. Preferably, the spacing between the thin lines may be 1.5-2.3 cm;
as shown in fig. 2, the optical detection structure of the present application has a controller, a camera, an LCD panel and a spectroscope, wherein the controller is electrically connected with the LCD panel, the camera is used for controlling the grating shape displayed on the LCD, and receiving the image data collected by the camera; the spectroscope is obliquely arranged relative to the wafer to be detected, and the camera is arranged above the spectroscope. When the device works, the controller controls the LCD to display the vertical or horizontal grating, the beam splitter projects the grating onto the wafer to be detected, the camera collects the wafer image with the projected grating, namely the image of the wafer to be detected with interference fringes, and the curvature of the surface of the object can be obtained by calculating the deformation of the grating.
Before a specific detection is performed, the optical system needs to be calibrated to determine the correlation between the spatial object and the image. In the application, in order to make the optical path system be established, the requirement that the imaging optical axis of the camera is perpendicular to the wafer to be detected needs to be met, and the LCD panel is perpendicular to the wafer to be detected compared with the wafer to be detected, namely, the imaging optical axis of the camera is perpendicular to the LCD panel and needs to be perpendicular to the measuring platform.
After the camera collects the image, the image needs to be simply preprocessed, including image brightness processing, image binarization, expansion and corrosion processing.
In the application, the stripe gray value generated by grating projection can be expressed as:
I 0 (x,y)＝A+Bcos[Φ(x,y)+0π] (1)
I 90 (x,y)＝A+Bcos[Φ(x,y)+0.5π] (2)
I 180 (x,y)＝A+Bcos[Φ(x,y)+π] (3)
I 270 (x,y)＝A+Bcos[Φ(x,y)+1.5π] (4)
wherein, A and B are respectively the ambient light intensity and the modulated light intensity.
By solving the above equations (1) to (4), the phase Φ can be obtained as:
while
From the phase shift and phase unwrapping formulas, we can get:
curvature in x-axis direction is
Curvature in the y-axis direction is
Wherein x, y, x1, x2, y1, y2 are pixel coordinate values, I 0 ，I 90 ，I 180 ，I 270 Interference fringe images shot by cameras at 0 degrees, 90 degrees, 180 degrees and 270 degrees respectively; p is between two interference fringesDistance in pixels; l is the sum of the horizontal distance from the LCD to the center of the spectroscope and the vertical distance from the center of the spectroscope to the wafer to be detected; Δx, Δy is the minimum identifiable pixel distance of the image; a is a correction factor, which is related to camera lens parameters. The curvatures of the wafers to be inspected can be obtained by taking equations (5) to (7) into equations (8) and (9), respectively. Further, the curvature of the wafer may be calculated from the curvature according to a general arc calculation formula, which is well known in the art.
The height of the wafer can be calculated from t (x, y) =b=Φ (x, y) +c; wherein b and c are parameters of camera pre-calibration, and t (x, y) is the wafer thickness at the coordinates (x, y).
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "connected," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the description of the present application, unless otherwise indicated, the terms "upper," "lower," "left," "right," "inner," "outer," and the like are used for convenience in describing the present application and simplifying the description based on the orientation or positional relationship shown in the drawings, and do not denote or imply that the devices or elements in question must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present application.
Finally, it should be noted that the above-mentioned technical solution is only one embodiment of the present application, and various modifications and variations can be easily made by those skilled in the art based on the application methods and principles disclosed in the present application, and are not limited to the methods described in the above-mentioned specific embodiments of the present application, therefore, the foregoing description is only preferred, and not meant to be limiting.
Claims (9)
1. A thickness and bow inspection system for large-size wafers, characterized by: comprises a transmission mechanism, a carrying mechanism and a detection mechanism; wherein,
the transmission mechanism is provided with a conveyor belt and is used for transmitting the wafer;
the conveying mechanism is provided with a mechanical arm, and the tail end of the mechanical arm is provided with a vacuum chuck and is used for conveying the wafer to be detected from the transmission mechanism to the detection mechanism;
the detection mechanism is provided with a bearing structure and an optical detection structure and is used for detecting the thickness and the bending degree of the wafer to be detected;
specifically, the bearing structure comprises a plurality of thin wires which are arranged in parallel and used for bearing the wafer to be detected, wherein the distance between the thin wires is 1.5-2.3 cm;
the optical detection structure comprises a camera and an LCD panel; the camera can rotate by 360 degrees and is used for rotating by 90 degrees in sequence to respectively shoot interference fringe images of 4 wafers to be detected;
the LCD panel may project a grating toward a wafer.
2. The detection system according to claim 1, wherein: the vacuum chucks have 4, 1 is used for sucking the center of the wafer, and the other 3 are used for sucking the edge of the wafer and are distributed in an equilateral triangle shape.
3. The detection system according to claim 2, wherein: the carrying mechanism is provided with an image recognition unit which is used for recognizing the edge and the circle center of the wafer to be detected by taking the picture of the wafer to be detected, and the vacuum chuck is respectively arranged at the edge and the circle center.
4. The detection system according to claim 1, wherein: the optical detection structure is also provided with a controller and a spectroscope;
the controller is electrically connected with the LCD panel and the camera and is used for controlling the grating shape displayed on the LCD, receiving image data acquired by the camera and calculating the thickness and the curvature of the wafer to be detected based on the acquired image data;
the spectroscope is obliquely arranged relative to the wafer to be detected, the LCD panel is vertically arranged relative to the wafer to be detected, and the camera is arranged above the spectroscope and is used for shooting interference fringe images of the wafer to be detected.
5. The detection system of claim 4, wherein: the controller may control the grating displayed by the LCD panel to be a vertical grating or a horizontal grating.
6. The detection system of claim 4, wherein: the calculation formula of the curvature of the wafer surface to be detected is as follows:
wherein the curvature along the x-axis direction isCurvature in the y-axis direction>Wherein (1)>Wherein x, y, x1, x2, y1, y2 are pixel coordinate values, I 0 ，I 90 ，I 180 ，I 270 Interference fringes shot by the camera at 0 degrees, 90 degrees, 180 degrees and 270 degrees are respectively formed; p is the distance between two interference fringes and takes pixels as a unit; l is the sum of the horizontal distance from the LCD to the center of the spectroscope and the vertical distance from the center of the spectroscope to the wafer to be detected; Δx, Δy is the minimum identifiable pixel distance of the image; a is a correction factor, which is related to camera lens parameters;
the calculation formula of the thickness is: t (x, y) =b Φ (x, y) +c; wherein b and c are parameters of camera pre-calibration, and t (x, y) is the wafer thickness at the coordinates (x, y).
7. A method for detecting thickness and curvature of a large-sized wafer, implemented by the detection system according to any one of claims 1 to 6, the method comprising:
step 1: the transmission mechanism conveys the wafer to be detected to a designated position;
step 2: the carrying mechanism adopts a vacuum chuck to carry the wafer to be detected to the bearing table;
step 3: the controller controls the LCD to project the grating, the camera collects images and rotates 90 degrees in sequence to obtain 4 wafer images to be detected;
step 4: and obtaining the curvature and thickness of the wafer to be detected according to the image.
8. A computer device comprising a processor and a memory, the memory storing computer-executable instructions executable by the processor, the processor executing the computer-executable instructions to implement the method of claim 7.
9. A computer-readable storage medium storing computer-executable instructions that, when invoked and executed by a processor, cause the processor to implement the method of claim 7.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310151463.7A CN116045827B (en) | 2023-02-22 | 2023-02-22 | System and method for detecting thickness and bending degree of large-size wafer |
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| CN116045827A (en) | 2023-05-02 |
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