CN213660355U - Wafer alignment identification equipment with high alignment precision - Google Patents
Wafer alignment identification equipment with high alignment precision Download PDFInfo
- Publication number
- CN213660355U CN213660355U CN202022493894.6U CN202022493894U CN213660355U CN 213660355 U CN213660355 U CN 213660355U CN 202022493894 U CN202022493894 U CN 202022493894U CN 213660355 U CN213660355 U CN 213660355U
- Authority
- CN
- China
- Prior art keywords
- wafer
- alignment
- adsorption
- value
- blowing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The utility model provides a wafer counterpoint identification equipment with high alignment accuracy, equipment includes: the photosensitive ranging device is used for acquiring the warping distribution value of the wafer through receiving and feeding back the optical signal; the adsorption device comprises a plurality of adsorption units, the adsorption device determines an adsorption value or a blowing value of the wafer to be compensated according to the warpage distribution value of the wafer, and gives suction or blowing force to the wafer from the bottom of the wafer so as to quantitatively compensate the deformation amount of the wafer and enable a plurality of alignment patterns of the wafer to be at the same horizontal height. The utility model discloses according to the warpage distribution of wafer, to inserting corresponding vacuum gas pocket in the different regions of lower chuck, through the adsorption value or the value of blowing of controlling different region gas pockets, the warpage situation of mechanical change wafer makes a plurality of counterpoint figures of wafer on same level for in wafer exposure/bonding process, make camera lens alignment precision error significantly reduce, improve exposure/bonding process quality.
Description
Technical Field
The utility model belongs to semiconductor device design field especially relates to a wafer counterpoint identification equipment and method with high alignment accuracy.
Background
In the fields of MEMS and IC manufacturing, particularly in the yellow light and bonding processes, focus-on-alignment techniques are important. Accurate pattern recognition not only directly determines the precision of the process, but also plays a decisive role in the yield of the subsequent process. At present, most of pattern recognition technologies adopt a scanning semiconductor wafer pattern area to accurately determine the position of the scanning semiconductor wafer pattern area, clear patterns are obtained through automatic focusing of a lens, the upper patterns and the lower patterns are ensured to be at the same position, and finally a machine carries out process operation.
In actual process operation, the semiconductor wafer is warped to a large extent after being subjected to a grinding process. In the pattern recognition process, the alignment patterns on the semiconductor wafer are not on a horizontal plane, so that pattern blurring and even alignment failure occur in the focusing process, the precision of the semiconductor wafer in the alignment process is directly affected, and products are even scrapped under extreme conditions.
The conventional solution is to control the quality of the incoming semiconductor wafer before the process, and to require the warpage of the semiconductor wafer to be kept within a certain range before the pattern recognition alignment. However, an obvious clamping control is invisibly specified for other processes, so that a plurality of product structures cannot be constructed, and the production process cost of the product is greatly increased.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a wafer alignment recognition apparatus and method with high alignment accuracy, which is used to solve the problem in the prior art that the wafer exposure process alignment accuracy is seriously affected due to different warpage of the wafer supplied materials.
To achieve the above and other related objects, the present invention provides a wafer alignment recognition apparatus with high alignment accuracy, the alignment recognition apparatus comprising: the photosensitive ranging device is arranged above the wafer and used for acquiring the warping distribution value of the wafer through receiving and feeding back optical signals; the adsorption device comprises a plurality of adsorption units, the adsorption device determines an adsorption value or a blowing value which needs to be compensated for the wafer according to the warpage distribution value of the wafer, and suction or blowing is given to the wafer from the bottom of the wafer so as to quantitatively compensate the deformation amount of the wafer, and the plurality of alignment patterns of the wafer are enabled to be at the same horizontal height.
Optionally, the photosensitive ranging device is configured to obtain deformation amounts, which need to be changed, of each region of the wafer according to the warpage distribution value of the wafer; and the adsorption device controls the suction force or the blowing force of the corresponding area based on the deformation quantity needing to be changed so as to quantitatively compensate the deformation quantity of the wafer and enable the plurality of alignment patterns of the wafer to be on the same horizontal height.
Optionally, the suction force is obtained by the following formula:
F1＝k△x+A；
wherein, F1Is suction force, k is the elastic constant of the wafer, and A is a fixed constant;
the blowing force is obtained by the following formula:
F2＝k△x+B；
wherein, F2For blowing force, k is the elastic constant of the wafer, and B is a fixed constant.
Optionally, adsorption equipment includes vacuum chuck, the vacuum chuck surface has a plurality of gas pockets, through setting up vacuum chuck's atmospheric pressure and the aperture of gas pocket are in order to adjust the suction or the blowing power of gas pocket, wherein, the size of suction with atmospheric pressure is the negative correlation, with the aperture of gas pocket is the negative correlation, the blowing power the size with atmospheric pressure is positive correlation, with the aperture of gas pocket is the negative correlation.
Optionally, the vacuum chuck includes a plurality of vacuum cavities, each vacuum cavity is correspondingly provided with one or more air holes, and the air pressure in each vacuum cavity is independently adjustable to control the suction force or blowing force of the corresponding region.
Optionally, the shape of the air hole includes one of a circular hole, an arc-shaped hole, and an annular hole.
Optionally, the alignment identification device further includes a pressure plate component disposed above the wafer, and configured to apply pressure to the wafer before the adsorption device works, so that the wafer is attached to the adsorption device, and remove the pressure after the adsorption device starts working.
The utility model also provides a wafer counterpoint identification method, wafer counterpoint identification method: providing the wafer alignment identification equipment with high alignment precision as described in any one of the above items; based on a photosensitive ranging device, acquiring a warping distribution value of the wafer through receiving and feeding back an optical signal; acquiring deformation quantity required to be changed in each area of the wafer according to the warpage distribution value; the adsorption device gives suction or blowing force to the wafer from the bottom of the wafer according to the adsorption value or blowing value of the wafer to be compensated so as to quantitatively compensate the deformation of the wafer and enable the plurality of alignment patterns of the wafer to be at the same horizontal height; carrying out focusing alignment based on the alignment graph; and carrying out an exposure process or a bonding process on the wafer.
Optionally, the adsorption device includes a plurality of vacuum chambers, each vacuum chamber includes one or more air holes, and the air pressure in each vacuum chamber is independently adjustable, and the suction force or blowing force of the air hole is adjusted by setting the air pressure of the vacuum chamber and the aperture of the air hole.
Optionally, before the adsorption device works, applying pressure to the wafer through a pressure plate component so as to attach the wafer to the adsorption device, and removing the pressure after the adsorption device starts to work.
As described above, the utility model discloses a wafer counterpoint identification equipment and method with high alignment accuracy has following beneficial effect:
the utility model discloses according to the warpage distribution of wafer, to inserting corresponding vacuum gas pocket in the different regions of lower chuck, through the adsorption value or the value of blowing of controlling different region gas pockets, the warpage situation of mechanical change wafer makes a plurality of counterpoint figures of wafer are on same level for in wafer exposure/bonding process, make camera lens alignment precision error significantly reduce, improve exposure/bonding process quality.
The utility model discloses can be at exposure/bonding board internally mounted photosensitive ranging device, also can add external photosensitive ranging device, lead-in to exposure/bonding board through data to the warpage of simulation calculation wafer distributes, and the chuck divides the regional different gas pockets that inserts under simultaneously, through the inside exposure/bonding process of board corresponding change adsorption value or blow the value can, have fine compatible type with exposure/bonding board, have fine practical application and worth.
Adopt the utility model discloses an equipment and method can solve exposure/bonding counterpoint in-process wafer warping problem completely, improve the precision of figure, can effectively reduction in production cost and technology complexity.
Drawings
Fig. 1 and fig. 2 are schematic diagrams illustrating a wafer alignment recognition device with high alignment accuracy acquiring a wafer warpage distribution value according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a wafer alignment recognition apparatus with high alignment accuracy according to an embodiment of the present invention.
Fig. 4 is a schematic structural diagram of an adsorption apparatus of a wafer alignment recognition device with high alignment accuracy according to another embodiment of the present invention.
Fig. 5 is a schematic diagram illustrating the alignment recognition performed under the wafer warpage according to an embodiment of the present invention.
Fig. 6 to 7 are schematic structural diagrams showing steps of the alignment recognition method according to the embodiment of the present invention.
Description of the element reference numerals
101 photosensitive ranging device
102 adsorption device
103 wafer
1031. 1032 alignment pattern
104 focusing lens
105 air hole
1051 round hole
1052 circular array
1053 arc hole
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The present invention can also be implemented or applied through other different specific embodiments, and various details in the present specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
As in the detailed description of the embodiments of the present invention, the cross-sectional views illustrating the device structure are not partially enlarged in general scale for convenience of illustration, and the schematic views are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
For convenience in description, spatial relational terms such as "below," "beneath," "below," "under," "over," "upper," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these terms of spatial relationship are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Further, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.
In the context of this application, a structure described as having a first feature "on" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed in between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and only the components related to the present invention are shown in the drawings rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, amount and ratio of the components in actual implementation may be changed at will, and the layout of the components may be more complicated.
In the traditional pattern alignment process, the problem that patterns on a semiconductor wafer are not on the same horizontal plane is solved by vertically focusing a lens, but the definition of the images is influenced, so that the precision is influenced. The utility model discloses a key point is the warpage distribution that snatchs semiconductor wafer, feeds back to exposure/bonding board then. And the exposure/bonding machine determines whether the force applied to the semiconductor wafer by the small holes in the local area of the adsorption disc is pulling force (suction force) or pushing force (blowing force) according to the model, so that the left and right patterns are kept on the same horizontal line.
The utility model discloses a carry out the ration repacking to exposure/bonding board semiconductor wafer adsorption disc, make its part have absorption and blow the function, calculate gaseous absorption value or the value of blowing according to the warpage value of semiconductor wafer, through the singlechip or write in board itself form, make its warpage value that changes the semiconductor wafer figure region at counterpoint in-process ration, finally solve and improve exposure counterpoint precision problem.
As shown in fig. 1 to 4, the present embodiment provides a wafer alignment recognition apparatus with high alignment accuracy, which may be used in a wafer exposure machine, a wafer bonding machine, or other apparatuses requiring alignment recognition, where the wafer 103 may be a silicon wafer, a glass wafer, or an SOI wafer, and the wafer may have various semiconductor films and processing patterns thereon, or may include a bonded wafer formed by bonding the wafers. The registration recognition apparatus includes: a photosensitive ranging device 101 and an adsorption device 102.
The photosensitive ranging device 101 may be disposed inside the alignment recognition device, and directly feeds back data to the exposure device, or disposed outside the alignment recognition device, and introduces data into the exposure/bonding machine, and the photosensitive ranging device 101 is configured to determine, through receiving and feeding back an optical signal, a distance distribution between the top surface of the wafer 103 and the photosensitive ranging device 101, so as to obtain a warpage distribution value of the wafer 103.
For example, the photosensitive ranging device 101 includes a photosensitive ranging chuck, which emits light to the lower wafer 103 and then reflects the light through the wafer 103, when the wafer 103 warps, the reflected light signals at different positions have differences, and the photosensitive ranging chuck determines the distance distribution between the top surface of the wafer 103 and the photosensitive ranging chuck according to the differences, so as to obtain the warp distribution value of the wafer 103, as shown in fig. 3. Of course, the photosensitive ranging device 101 may also be other devices suitable for acquiring the warpage distribution value of the wafer 103, and is not limited to the examples listed herein.
In the application process, if the photosensitive ranging chuck needs to be arranged inside the exposure/bonding equipment, as shown in fig. 2, the photosensitive ranging chuck only needs to be fixed above the inside of the alignment identification equipment through a detachable connecting piece such as a screw, the photosensitive ranging chuck can be connected with a power supply line of the alignment identification equipment for power supply, and can also be supplied with power by a self-contained battery, and the photosensitive ranging chuck can be connected with the adsorption device 102 in a wired or wireless manner to realize signal connection with the adsorption device 102. If the photosensitive ranging chuck is disposed outside the exposure/bonding device, as shown in fig. 1, it is connected to the exposure/bonding machine through a data line or a wireless device.
Further, in this embodiment, the photosensitive ranging device 101 is further configured to obtain deformation amounts that need to be changed in each area of the wafer 103 according to the warpage distribution value of the wafer 103.
As shown in fig. 1 to 4, the adsorption device 102 is disposed below the wafer 103, the adsorption device 102 includes a plurality of adsorption units, the adsorption device 102 determines an adsorption value or a blowing value that needs to be compensated for the wafer 103 according to a warpage distribution value of the wafer 103, and applies suction or blowing force to the wafer 103 from the bottom of the wafer 103 to quantitatively compensate for a deformation amount of the wafer 103, so that the plurality of alignment patterns 1031, 1032 of the wafer 103 are at the same level. The adsorption value or the blowing value of the wafer 103 to be compensated is determined according to the warpage distribution value of the wafer 103, and the function of giving suction or blowing force to the wafer 103 from the bottom of the wafer 103 can be realized by a single chip microcomputer or a computer.
In this embodiment, the suction device 102 controls the suction force or the blowing force of the corresponding area based on the deformation amount to be changed, so as to quantitatively compensate the deformation amount of the wafer 103, and make the plurality of alignment patterns 1031, 1032 of the wafer 103 align with the plurality of alignment patterns 1031, 1032 at the same level.
In the present embodiment, the suction force is obtained by the following formula:
f1 ═ k Δ x + a; wherein, F1K is the elastic constant of the wafer 103, and A is the fixed constant;
the blowing force is obtained by the following formula:
f2 ═ k Δ x + B; wherein, F2For blowing force, k is the elastic constant of the wafer 103, and B is a fixed constant.
For the wafers 103 with the same process, the strain in the vertical direction approximately satisfies the linear relationship, and corresponding writing into the production program of the exposure apparatus can perform targeted compensation for different warpage of the incoming wafers 103, so that the alignment patterns 1031, 1032 on the incoming wafers 1031, 1032 are at the same horizontal height, thereby improving the alignment accuracy.
As shown in fig. 3 and 4, the suction device 102 includes a vacuum chuck having a plurality of air holes 105 on a surface thereof, and the air pressure of the vacuum chuck and the aperture of the air holes 105 are set to adjust the suction force (the air holes facing away from the wafer as shown by the arrow in fig. 3) or the blowing force (the air holes facing toward the wafer as shown by the arrow in fig. 3) of the air holes 105, wherein the magnitude of the suction force is negatively related to the air pressure and negatively related to the aperture of the air holes 105, and the magnitude of the blowing force is positively related to the air pressure and negatively related to the aperture of the air holes 105. It should be noted that the suction force represents a force from the wafer toward the suction device, and the blowing force represents a force from the wafer away from the suction device. For example, a focal plane may be set, and then the upper surface of the wafer may be brought close to or overlapped with the focal plane by using the suction force when the upper surface of the wafer is above the focal plane, or the blowing force when the wafer top surface is below the focal plane.
In order to further adapt to the warpage distribution of the wafer 103 in different regions, in this embodiment, the vacuum chuck includes a plurality of vacuum chambers, each vacuum chamber is correspondingly provided with one or more air holes 105, and the air pressure in each vacuum chamber is independently adjustable to control the suction force or blowing force of the corresponding region. In this example, different adsorption strengths or blow-up strengths are given to the wafer 103 in different regions, and the warp value of the wafer 103 is quantitatively changed so that the alignment patterns 1031, 1032 of the wafer 103 are at the same level. For the exposure process, the plurality of alignment patterns 1031, 1032 on the wafer 103 are at the same level, which can improve the exposure accuracy of the wafer 103; for the bonding process, the top semiconductor wafer has no process, so it can be regarded as a horizontal semiconductor wafer. The bottom semiconductor wafer collects the warpage value by adopting the method and then quantitatively changes the warpage distribution, so that the left and right identification patterns are on the same horizontal line, the accuracy of identification of the alignment patterns 1031 and 1032 is improved, and finally, the bonding process is carried out.
The shape of the air hole 105 includes one of a circular hole, an arc hole and a circular hole, as shown in fig. 4, of course, the shape of the air hole 105 may also be rectangular, triangular, diamond, oval, etc., and is not limited to the examples listed herein. In this embodiment, the air holes 105 located inside the adsorption device 102 are the dispersed circular holes 1051, the air holes 105 located in the middle of the adsorption device 102 are circular holes or circular hole arrays 1052 arranged in a circular shape, and the air holes 105 located at the edge of the adsorption device 102 are the arc-shaped holes 1053, further, the circular holes in the inside of the adsorption device 102, the circular holes in the middle, or the circular hole arrays arranged in a circular shape, and the arc-shaped holes at the edge are all provided with respective independent vacuum chambers, so that the suction force of the air holes 105 in each region is independently adjustable, the configuration has wider applicability to improving the warpage of the wafer 103, and can cope with the deformation compensation of most of the wafer 103, so that the deformation compensation of the wafer 103 can be realized without replacing the adsorption device 102 under most conditions, and the cost can be effectively saved.
In this embodiment, the alignment identification apparatus further includes a pressure plate component disposed above the wafer 103, and configured to apply pressure to the wafer 103 before the adsorption device 102 works, so that the wafer 103 is attached to the adsorption device 102, and remove the pressure after the adsorption device 102 starts working.
In this embodiment, the alignment recognition apparatus further includes a focus lens 104, and the focus lens 104 focuses the wafer 103 after quantitatively compensating the deformation amount of the wafer 103 and making the plurality of alignment patterns 1031, 1032 of the wafer 103 at the same level, so as to determine a focus plane of the focus lens 104.
As shown in fig. 5, when the wafer 103 has warpage, the alignment patterns 1031, 1032 on the semiconductor wafer 103 are not on a horizontal plane during the pattern recognition process, so that pattern blurring or even alignment failure may occur during the focusing process, which directly affects the accuracy of the semiconductor wafer 103 during the alignment process, and in an extreme case, may even result in product rejection.
In order to solve the above problem, as shown in fig. 1 to 7, the present embodiment further provides a wafer alignment identification method, including the following steps:
step 1), providing wafer alignment identification equipment with high alignment precision according to any one item;
and step 2), acquiring a warping distribution value of the wafer 103 through receiving and feeding back optical signals based on the photosensitive ranging device 101, as shown in fig. 1 or fig. 2.
Step 3), acquiring deformation quantity required to be changed in each area of the wafer 103 according to the warpage distribution value;
step 4), the absorption device 102 gives suction or blowing force to the wafer 103 from the bottom of the wafer 103 according to the absorption value or blowing value of the wafer 103 to be compensated, so as to quantitatively compensate the deformation of the wafer 103, and make the alignment patterns 1031, 1032 of the wafer 103 align to the patterns 1031, 1032 at the same level, as shown in fig. 6;
step 5), the focusing lens 104 of the alignment recognition device performs focusing alignment on the alignment patterns 1031, 1032 based on the alignment patterns 1031, 1032, as shown in fig. 7;
and 6), carrying out an exposure process or a bonding process on the wafer 103.
For example, the adsorption device 102 includes a plurality of vacuum chambers, each vacuum chamber includes one or more air holes 105, and the air pressure in each vacuum chamber is independently adjustable, so as to adjust the suction force or blowing force of the air holes 105 by setting the air pressure of the vacuum chamber and the aperture of the air holes 105.
In this embodiment, the bonding method further includes the steps of: before the operation of the adsorption device 102, a pressure is applied to the wafer 103 by a pressure plate component, so that the wafer 103 is attached to the adsorption device 102, and the pressure is removed after the operation of the adsorption device 102 is started.
As described above, the utility model discloses a wafer counterpoint identification equipment and method with high alignment accuracy has following beneficial effect:
the utility model discloses according to the warpage distribution of wafer, to the corresponding vacuum gas pocket 105 of the different regional access of lower chuck, through the adsorption value or the value of blowing of the different regional gas pockets 105 of control, the warpage situation of mechanical change wafer makes a plurality of counterpoint figures 1031, 1032 of wafer are on same level for in wafer exposure/bonding process, make camera lens alignment precision error significantly reduce, improve exposure/bonding process quality.
The utility model discloses can be at exposure/bonding board internally mounted photosensitive ranging device 101, also can add external photosensitive ranging device 101, lead in to exposure/bonding board through data to the warpage of analog computation wafer distributes, and the chuck divides regional access different gas pockets 105 under simultaneously, through the board inside exposure/bonding process corresponding change adsorption value or blow the value can, have fine compatible type with exposure/bonding board, have fine practical application and worth.
Adopt the utility model discloses an equipment and method can solve exposure/bonding counterpoint in-process wafer warping problem completely, improve the precision of figure, can effectively reduction in production cost and technology complexity.
Therefore, the utility model effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles and effects of the present invention, and are not to be construed as limiting the invention. Modifications and variations can be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which may be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (6)
1. A wafer alignment recognition apparatus with high alignment accuracy, comprising:
the photosensitive ranging device is used for acquiring the warping distribution value of the wafer through receiving and feeding back optical signals;
the adsorption device comprises a plurality of adsorption units, the adsorption device determines an adsorption value or a blowing value which needs to be compensated for the wafer according to the warpage distribution value of the wafer, and suction or blowing is given to the wafer from the bottom of the wafer so as to quantitatively compensate the deformation amount of the wafer, and the plurality of alignment patterns of the wafer are enabled to be at the same horizontal height.
2. The wafer alignment identification apparatus with high alignment accuracy as claimed in claim 1, wherein:
the photosensitive ranging device is used for acquiring deformation quantity of each area of the wafer, which needs to be changed, according to the warping distribution value of the wafer;
and the adsorption device controls the suction force or the blowing force of the corresponding area based on the deformation quantity needing to be changed so as to quantitatively compensate the deformation quantity of the wafer and enable the plurality of alignment patterns of the wafer to be on the same horizontal height.
3. The wafer alignment identification apparatus with high alignment accuracy as claimed in claim 1, wherein: adsorption equipment includes vacuum chuck, vacuum chuck surface has a plurality of gas pockets, through setting up vacuum chuck's atmospheric pressure and the aperture of gas pocket are in order to adjust the suction or the blowing power of gas pocket, wherein, the size of suction with atmospheric pressure is the negative correlation, with the aperture of gas pocket is the negative correlation, the blowing power the size with atmospheric pressure is positive correlation, with the aperture of gas pocket is the negative correlation.
4. The wafer alignment identification apparatus with high alignment accuracy as claimed in claim 3, wherein: the vacuum chuck comprises a plurality of vacuum cavities, one or more air holes are correspondingly formed in each vacuum cavity, and the air pressure in each vacuum cavity is independently adjustable so as to control the suction force or blowing force of the corresponding area.
5. The wafer alignment identification apparatus with high alignment accuracy as claimed in claim 3 or 4, wherein: the shape of the air hole comprises one of a round hole, an arc-shaped hole and an annular hole.
6. The wafer alignment identification apparatus with high alignment accuracy as claimed in claim 1, wherein: the alignment identification equipment further comprises a pressing plate part which is arranged above the wafer and used for applying pressure to the wafer before the adsorption device works so as to enable the wafer to be attached to the adsorption device, and the pressure is removed after the adsorption device starts to work.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022493894.6U CN213660355U (en) | 2020-11-02 | 2020-11-02 | Wafer alignment identification equipment with high alignment precision |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022493894.6U CN213660355U (en) | 2020-11-02 | 2020-11-02 | Wafer alignment identification equipment with high alignment precision |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213660355U true CN213660355U (en) | 2021-07-09 |
Family
ID=76705040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022493894.6U Active CN213660355U (en) | 2020-11-02 | 2020-11-02 | Wafer alignment identification equipment with high alignment precision |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213660355U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113725727A (en) * | 2021-07-16 | 2021-11-30 | 华芯半导体研究院(北京)有限公司 | Method for improving VCSEL exposure uniformity and VCSEL chip |
| CN116045827A (en) * | 2023-02-22 | 2023-05-02 | 无锡星微科技有限公司 | System and method for detecting thickness and bending degree of large-size wafer |
-
2020
- 2020-11-02 CN CN202022493894.6U patent/CN213660355U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113725727A (en) * | 2021-07-16 | 2021-11-30 | 华芯半导体研究院(北京)有限公司 | Method for improving VCSEL exposure uniformity and VCSEL chip |
| CN116045827A (en) * | 2023-02-22 | 2023-05-02 | 无锡星微科技有限公司 | System and method for detecting thickness and bending degree of large-size wafer |
| CN116045827B (en) * | 2023-02-22 | 2023-11-10 | 无锡星微科技有限公司 | System and method for detecting thickness and bending degree of large-size wafer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN213660355U (en) | Wafer alignment identification equipment with high alignment precision | |
| US10144156B2 (en) | Imprint apparatus, imprint method, and method for producing device | |
| JP6552329B2 (en) | Imprint apparatus, imprint system, and article manufacturing method | |
| JP5395769B2 (en) | Template chuck, imprint apparatus, and pattern forming method | |
| CN107803604A (en) | Chuck table, the manufacture method of porous ceramics attracting board and attracting holding system | |
| WO2020119469A1 (en) | Processing device and processing method for toroidal gratings | |
| CN101059650A (en) | Pattern transfer printing device, stamping device and pattern transfer printing method | |
| US20190369499A1 (en) | Multi-substrate processing on digital lithography systems | |
| CN104765249A (en) | Imprint apparatus, imprint method, and article manufacturing method | |
| CN108153107A (en) | Imprinting apparatus and article manufacturing method | |
| CN107275269A (en) | The manufacture method of processing unit and article | |
| CN114446817A (en) | Wafer alignment identification equipment and method with high alignment precision | |
| CN214313133U (en) | Wafer bonding equipment | |
| US11462404B2 (en) | Imprint apparatus and method of manufacturing article | |
| JP6022044B2 (en) | Method and apparatus for manufacturing a plurality of microlenses | |
| CN114388392A (en) | Wafer bonding equipment and bonding method for eliminating wafer warpage | |
| TW202314401A (en) | Stage apparatus, lithography apparatus and article manufacturing method | |
| US11835871B2 (en) | Imprint apparatus, imprint method, and article manufacturing method | |
| CN105717749B (en) | Non-contact type silicon wafer deflection compensation device and method based on electrostatic effect | |
| CN112255897A (en) | Special accurate multi-functional work piece platform of COF exposure machine | |
| KR20210018031A (en) | Die bonding device and manufacturing method of semiconductor device | |
| CN111913369A (en) | Stepping high-precision photoetching machine | |
| CN114613693A (en) | Wafer bonding equipment | |
| US20220157633A1 (en) | Wafer bonding apparatus | |
| CN215771070U (en) | Wafer bonding device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |