CN111664802A - Semiconductor wafer surface morphology measuring device based on dynamic quantitative phase imaging - Google Patents
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Abstract
In order to solve the technical problem that the traditional optical measurement method has limitations in the aspects of measurement accuracy, speed and real-time performance in the measurement of the surface topography of the semiconductor wafer, the invention provides a semiconductor wafer surface topography measurement device based on a dynamic quantitative phase imaging technology, which comprises a light source, and an objective table, a microscope objective, a half-transmitting and half-reflecting mirror, an ocular, a quantitative phase imaging module and an image data processing unit which are sequentially arranged from bottom to top; the semi-transparent semi-reflecting mirror is positioned on an emergent light path of the light source at the same time; the object stage is used for placing a semiconductor wafer to be tested and can translate in two dimensions in a horizontal plane; the quantitative phase imaging module consists of a binary optical device and a detector; the measured surface of the measured semiconductor wafer and the light-facing surface of the binary optical device meet the object-image conjugate relation; the detector is used for detecting the light field image modulated by the binary optical device; the image data processing unit is used for processing the image acquired by the detector to obtain the three-dimensional surface morphology of the semiconductor wafer to be detected.
Description
Technical Field
The invention belongs to the field of optics, and relates to a semiconductor wafer surface morphology measuring device based on dynamic quantitative phase imaging.
Background
Over the past half century or more, the integrated circuit industry has continued to advance in accordance with moore's law and has become one of the mainstay industries of global economy. Wafers are basic materials for manufacturing integrated circuits, and with the rapid development of electronic science and technology and the continuous improvement of integration and performance of electronic products, the production scale of wafers is also continuously enlarged, and the control of surface quality is very important in the grinding process. The wafer with poor surface quality has hidden troubles such as stress concentration and cracks, and when the wafer is divided, the wafer is cracked and greatly lost. The process is monitored by measuring the surface topography of the wafer, so that the yield loss is reduced, the yield is improved, and the importance of the measurement of the surface topography of the wafer is widely recognized.
Surface topography measurement techniques have gone through a process that has progressed from qualitative to quantitative measurements. The mechanical probe type measuring method is a quantitative measuring method for surface appearance which is developed earlier and studied most sufficiently. The measuring principle is that a mechanical probe is used for contacting a measured surface, when the probe moves along the measured surface, the probe moves up and down due to microscopic unevenness of the measured surface, the moving amount of the probe is measured by a displacement sensor combined with the probe, and the three-dimensional profile of the measured surface is obtained after the obtained data are analyzed and processed.
To remedy the drawbacks of the mechanical probe-type measurement method, Ruska proposed a non-contact measurement method using a focused, very fine electron beam as a probe, the first electron microscope being developed. On the basis, the electronic probe is used for scanning the surface to be detected, secondary electrons are excited from the surface to be detected, and the surface appearance of the surface to be detected can be obtained according to the intensity and distribution of the secondary electrons. Scanning Electronic Microscopy (SEM) has high longitudinal and lateral resolutions of 10nm and 2nm, respectively, but requires working in a vacuum environment, is complicated to operate, takes time to measure, and requires electrical conduction of the measured surface. These all restrict its range of application.
The optical probe type measuring method is similar to the mechanical probe type measuring method in principle, and is different from the mechanical probe type measuring method in that the probe in the optical probe type measuring system is a focused light beam, so that the surface of a measured object is prevented from being damaged. The method has low requirements on operating environment and is widely applied in the industrial field. Hamilton et al measures the surface microscopic morphology by confocal microscopy, which has the advantages of simple optical path, convenient use, narrow linear range and high sensitivity of the photoelectric detector to the reflectivity and microscopic slope change of the measured surface. Meanwhile, when the optical probe measures the surface appearance, a set of high-precision mechanical scanning mechanism and a focusing system with complex structures are needed, the measurement resolution is still influenced by mechanical vibration, circuit noise and motion errors of the mechanical scanning mechanism, and the defect of low measurement efficiency exists due to point-by-point scanning.
In addition, Ruprecht et al propose the complex color confocal method, the measurement principle is to adopt complex color light source and axial dispersion objective, replace ordinary optical sensor analysis reflection focusing wavelength and luminance information with the spectrometer at the same time, the light of different wavelength has different focal lengths, therefore this method can measure the point in certain height range (the height range depends on the wavelength range of the light source), does not need the longitudinal scanning, has improved the measuring speed, but the disadvantage is that the measuring height range is small, the lateral resolution is low, and is apt to be influenced by the measured surface color.
The optical probe-based measurement method can be considered as a geometrical-optics method, and then researchers have successively proposed methods based on physical optics and informatics principles. Taked et al propose Fourier transform profilometry to extract the surface topography information of the measured object from the deformed fringes. The method is fast, and has the disadvantages that the inclination of an object must be limited to avoid the frequency spectrum aliasing phenomenon, and the measurement precision is influenced by the calibration precision. Makosch et al propose a differential interference surface topography measuring method, the measuring principle is to divide a light beam into two coherent light beams and focus the two coherent light beams into two light spots with a very close distance on a measured surface, the phase difference of the two coherent light beams is determined by the height difference of the measured surface between the two light spots, and the surface profile information can be obtained by measuring the phase difference by using the method. Because the differential interference adopts a common optical path optical system, the interference resistance is good, and a standard reference plane is not needed. However, this method accumulates errors because differential interferometry actually measures the surface slope and the surface profile is obtained by integrating the slope.
With the development of optoelectronic technologies such as micro devices, Salbut and the like propose a phase shift interference microscopy method, and calculate the relationship between the phase and the height by a phase-resolved algorithm, so as to obtain the heights of all pixel points in a field range. The method can achieve the longitudinal measurement resolution of 1nm, but has the defects of small measurement range, low measurement speed and easy influence of environmental disturbance.
In summary, the surface topography measurement method has been developed from the original contact measurement to the non-contact and non-destructive measurement. The optical measurement method can realize high-precision non-contact measurement, and the system has simple structure and low cost, so the method is rapidly developed in the field of surface topography measurement. However, various optical measurement methods have limitations in measurement accuracy, speed and real-time performance in the surface topography measurement of semiconductor wafers.
Disclosure of Invention
In order to solve the technical problem that the traditional optical measurement method has limitations in the aspects of measurement accuracy, speed and real-time performance in the measurement of the surface topography of the semiconductor wafer, the invention provides a semiconductor wafer surface topography measurement device based on a dynamic quantitative phase imaging technology, which can carry out single exposure and dynamic real-time measurement, is not influenced by the external environment and can ensure the measurement accuracy.
The technical scheme of the invention is as follows:
the semiconductor wafer surface appearance measuring device based on dynamic quantitative phase imaging is characterized in that: the device comprises a light source, and an object stage, a microscope objective, a half-transmitting and half-reflecting mirror, an ocular, a quantitative phase imaging module and an image data processing unit which are sequentially arranged from bottom to top along the same optical path;
the semi-transparent semi-reflecting mirror is positioned on an emergent light path of the light source at the same time;
the object stage is used for placing a semiconductor wafer to be tested and can translate in two dimensions in a horizontal plane;
the quantitative phase imaging module consists of a binary optical device and a detector; the measured surface of the measured semiconductor wafer and the light-facing surface of the binary optical device meet the object-image conjugate relation;
the binary optics is used for modulating an optical field incident on the binary optics;
the detector is used for detecting the light field image modulated by the binary optical device;
the image data processing unit is used for processing the image acquired by the detector to obtain the three-dimensional surface morphology of the semiconductor wafer to be detected.
Further, the binary optical device is a two-dimensionally arranged micro-lens array; the aperture and focal length of all the lenses in the microlens array are the same.
Further, the binary optical device is a plano-convex lens array which is arranged in two dimensions; the aperture and the focal length of all the plano-convex lenses in the plano-convex lens array are the same.
Further, the specific method for obtaining the three-dimensional topography of the surface of the semiconductor wafer to be tested by processing the image acquired by the detector by the image data processing unit is as follows:
step1, calculating the deviation delta x and delta y of the light spot centroid in each sub-aperture relative to the x and y directions of a reference position;
step2, calculating the average slope of the wave fronts in the x and y directions in the sub-aperture range divided by the micro lens array:
wherein f is the focal length of the plano-convex lens, SxIs the flat of the wave front in the x directionAverage slope, SyThe average slope of the wavefront in the y-direction;
step3, adding SxAnd SySubstituting into finite difference model, namely the following formula, and calculating to obtain the phase distribution of wavefront to be measured
Wherein N is the number of rows and columns of the microlens array, h is the sub-aperture size of the microlens array,
the average slopes of the wave fronts in the x direction and the y direction in the sub-apertures with the position (i, j) in the micro-lens array are respectively;
and 4, two-dimensionally scanning the object stage in a horizontal plane, repeating the steps 1-3 at each scanning position point, and finally splicing the obtained calculation results of the wavefront phase to be detected to obtain the three-dimensional surface morphology of the semiconductor wafer to be detected.
Or the binary optical device is a mixed modulation grating and is used for carrying out amplitude and phase modulation on the light field incident to the surface of the binary optical device, the size of a light-transmitting part of the binary optical device is 2 times that of a light-proof part, and the light-transmitting part carries out phase modulation on the light field incident to the surface of the binary optical device according to phases 0 and pi; the phases 0 and pi are alternately distributed in a checkerboard manner.
Further, the specific method for obtaining the three-dimensional topography of the surface of the semiconductor wafer to be tested by processing the image acquired by the detector by the image data processing unit is as follows:
step1, performing fast Fourier transform on an acquired interference image to acquire a spectrogram;
step2, extracting two positive first-level frequency spectrums in the orthogonal direction by using frequency domain filtering window functions respectively, wherein the frequency domain filtering window functions adopt Hamming functions which meet the following requirements:
in the formula: (x)0,y0) The coordinate of the center position of the primary spectrum is shown, and (x, y) are the coordinates of the primary spectrum in the x and y directions;
step3, calculating the extracted positive-level frequency spectrum by utilizing inverse Fourier transform to obtain the differential wavefront in the x and y directions
And
step4, differentiating the wavefront in the x and y directions
And
substituting into finite difference model (formula 5), calculating to obtain wavefront phase distribution
In the formula, sh is the transverse shearing amount;
and 5, two-dimensionally scanning the object stage in a horizontal plane, repeating the steps 1-4 at each scanning position point, and finally splicing the calculation results of the wavefront phase to be detected to obtain the three-dimensional surface morphology of the semiconductor wafer to be detected.
Further, the light source is a laser light source or a white light source.
The invention has the advantages that:
1. the invention realizes high-precision measurement of the three-dimensional morphology of the surface of the semiconductor wafer by using the light source, the semi-transparent semi-reflecting mirror, the microscope objective, the ocular and the quantitative phase imaging module.
2. The binary optical device of the quantitative phase imaging module can selectively use a micro-lens array or a mixed modulation grating, so that the three-dimensional topography measurement of the surface of the wafer under different scales and resolutions can be realized.
3. The traditional phase shift method needs to perform fixed phase modulation in a time-sharing manner, acquire phase modulation images at each moment, and calculate to obtain the appearance information of the surface to be measured according to the phase modulation images at different moments, wherein the method is easily influenced by the environment (air disturbance and vibration); the invention can calculate the information of the surface appearance of the measured surface by acquiring the image once, so compared with the traditional phase shift interference method, the invention is not influenced by the environment (air disturbance and vibration).
4. The invention can be used for single exposure and real-time dynamic measurement, thereby greatly improving the measurement efficiency.
5. The binary optical device adopted by the invention is a micro-lens array or a mixed modulation grating, the corresponding measurement principles are respectively a Hartmann-shack principle and a transverse shearing interference principle, and the method has a larger measurement dynamic range compared with the traditional phase-shift interference method.
6. When the binary optical device adopted by the invention is a micro-lens array, the measurement principle is the Hartmann-shack principle, compared with the traditional phase-shift interferometry, the method has low requirement on the coherence of the light source, and can work under a white light source or a monochromatic light source.
7. The invention has less manual links, no artificial subjective error and high-precision quantitative measurement.
8. Experiments prove that the method has high stability, good repeatability and high confidence of the measurement result. 7. The invention has good economical efficiency and high precision, and is more suitable for the inspection of production workshops.
Drawings
FIG. 1 is a schematic diagram of an apparatus for measuring surface topography of a semiconductor wafer according to the present invention.
Fig. 2 is a schematic diagram of a binary optical device according to the present invention, (a) is a schematic diagram of a binary optical device being a microlens array, and (b) is a schematic diagram of a binary optical device being a hybrid modulation grating.
Fig. 3 is a diagram of the transmission function of a hybrid modulation grating, white for 0-phase modulation, black for pi-phase modulation, and gray for opaque parts.
Description of reference numerals:
1-a light source; 2-a half-transmitting half-reflecting mirror; 3-a microscope objective; 4-semiconductor wafer under test; 5-an object stage; 6-ocular lens; 7-a quantitative phase imaging module; 8-binary optics; 81-microlens array; 82-hybrid modulation grating; 9-detector.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
As shown in fig. 1, the apparatus for measuring the surface topography of a semiconductor wafer according to the present invention includes a light source 1, and an object stage 5, a microscope objective 3, a half-mirror 2, an eyepiece 6, a quantitative phase imaging module 7, and an image data processing unit (not shown in the figure) sequentially disposed from bottom to top along the same optical path.
The light source 1 may be a laser light source or a white light source.
The half mirror 2 can receive the light beam emitted from the light source 1.
The stage 5 is two-dimensionally translatable in a horizontal plane, and the stage 5 is used for placing the semiconductor wafer 4 to be tested.
The quantitative phase imaging module 7 consists of a binary optics 8 and a detector 9. The measured surface of the measured semiconductor wafer 4 and the light-facing surface of the binary optical device 8 satisfy the object-image conjugate relation.
The binary optics 8 serve to modulate the light field incident thereon; the binary optics 8 may employ a microlens array 81 or a hybrid modulation grating 82.
As shown in fig. 2 (a), the microlens array 81 in the present embodiment is a two-dimensionally arranged planoconvex lens array in which parameters (aperture and focal length) of all the planoconvex lenses are the same.
As shown in fig. 2 (b), the hybrid modulation grating 82 performs amplitude and phase modulation on the light field incident on the surface thereof, in which the size (total area) of the light-transmitting portion is 2 times the size (total area) of the light-non-transmitting portion, and the light-transmitting portion performs phase modulation on the light field incident on the surface thereof in phases 0 and pi (checkerboard alternate distribution), as shown in fig. 3. The hybrid modulation grating 82 transmittance function is:
in the formula, d is grating pitch; a is the size (namely the light transmission area) of the light transmission part of the mixed modulation grating; rect is a rectangular function; comb is a Comb sampling function, (x, y) is a spatial coordinate, j2＝-1。
The detector 9 is used for detecting the light field image modulated by the binary optical device 8;
the image data processing unit is used for processing the image acquired by the detector 9 to obtain the three-dimensional surface morphology of the semiconductor wafer 4 to be detected.
The specific working process and principle of the invention are as follows:
the spherical wave output by the light source 1 is reflected by the semi-transparent semi-reflecting mirror 2, is collimated by the microscope objective 3 and then enters the measured surface of the measured semiconductor wafer 4 placed on the objective table 5, is reflected by the measured surface of the measured semiconductor wafer 4, then passes through the microscope objective 3, then passes through the semi-transparent semi-reflecting mirror 2, and enters the quantitative phase imaging module 7 through the ocular lens 6. According to the form adopted by the binary optics 8 in the quantitative phase imaging module 7, there are two modes of operation:
working mode 1: the binary optics 8 employs a microlens array 81
In this mode, a light beam incident on the surface of the microlens array 81 is modulated into a two-dimensional spot lattice, and a spot lattice image is acquired by the detector 9. The data processing method comprises the following steps:
step 1: calculating the deviation delta x and delta y of the light spot centroid in each sub-aperture relative to the x and y directions of the reference position; the reference positions x and y are positions where the error of the quantitative phase imaging module 7 is calibrated in advance, and the calibration method is a method known in the field;
step 2: the average slopes of the wave fronts in the x and y directions within the sub-aperture range divided by the microlens array 81 are calculated:
wherein f is the focal length of the plano-convex lens, SxIs the average slope of the wavefront in the x-direction, SyIs the average slope of the wavefront in the y-direction.
Step3 reaction of SxAnd SySubstituting into finite difference model (formula 3) to calculate wavefront phase distribution
Wherein N is the number of rows and columns of the microlens array, h is the sub-aperture size of the microlens array,
the average slope of the wave front in the x direction in the sub-aperture with the position (i, j) in the micro lens array,
is the average slope of the wavefront in the y-direction within the sub-aperture with position (i, j) in the microlens array.
And Step4, two-dimensionally scanning the object stage 5 in the horizontal plane, repeating Stpe 1-Step 3 at each scanning position point, and finally splicing the obtained calculation results of the wavefront phase to be detected to obtain the three-dimensional surface topography of the semiconductor wafer 4 to be detected.
The working mode 2 is as follows: the binary optical device 8 uses a hybrid modulation grating 82
In this mode, the light beam incident on the surface of the hybrid modulation grating 82 generates ± 1 st order diffracted lights in two orthogonal directions, and these four diffracted lights are displaced from each other and interfere with each other, and an interference image is acquired by the detector 9.
The data processing method comprises the following steps:
step 1: performing Fast Fourier Transform (FFT) on the obtained interference image to obtain a spectrogram;
step 2: two positive first-level frequency spectrums in the orthogonal direction are extracted by using frequency domain filtering window functions respectively, and the frequency domain filtering window functions adopt Hamming functions which meet the following requirements:
in the formula: (x)0,y0) Is the coordinate of the center position of the primary spectrum, and (x, y) is the coordinate of the x direction and the y direction of the primary spectrum.
Step3, calculating the extracted positive-level frequency spectrum by using inverse Fourier transform (iFFT) to obtain differential wave fronts in the x and y directions
And
step4 differentiating the wavefront in the x, y directions
And
substituting into finite difference model (formula 5), calculating to obtain wavefront phase distribution
Wherein sh is the transverse shearing amount.
And Step5, two-dimensionally scanning the object stage 5 in the horizontal plane, repeating Stpe 1-Step 4 at each scanning position point, and finally splicing the calculation results of the wavefront phase to be detected to obtain the three-dimensional surface topography of the semiconductor wafer 4 to be detected.
Claims (7)
1. Semiconductor wafer surface topography measuring device based on developments quantitative phase imaging, its characterized in that: the device comprises a light source (1), and an object stage (5), a microscope objective (3), a half-transmitting and half-reflecting mirror (2), an ocular (6), a quantitative phase imaging module (7) and an image data processing unit which are sequentially arranged from bottom to top along the same optical path;
the semi-transparent semi-reflecting mirror (2) is positioned on the emergent light path of the light source (1) at the same time;
the object stage (5) is used for placing the tested semiconductor wafer (4) and can translate in two dimensions in a horizontal plane;
the quantitative phase imaging module (7) consists of a binary optical device (8) and a detector (9); the measured surface of the measured semiconductor wafer (4) and the light-facing surface of the binary optical device (8) meet the object-image conjugate relation;
a binary optical device (8) for modulating the light field incident thereon;
the detector (9) is used for detecting the light field image modulated by the binary optical device (8);
the image data processing unit is used for processing the image acquired by the detector (9) to obtain the three-dimensional surface morphology of the semiconductor wafer (4).
2. The apparatus for measuring surface topography of a semiconductor wafer based on dynamic quantitative phase imaging as claimed in claim 1, wherein: the binary optical device (8) is a micro-lens array which is arranged in two dimensions; the aperture and focal length of all the lenses in the microlens array are the same.
3. The apparatus for measuring surface topography of a semiconductor wafer based on dynamic quantitative phase imaging as claimed in claim 2, wherein: the binary optical device (8) is a plano-convex lens array which is arranged in a two-dimensional way; the aperture and the focal length of all the plano-convex lenses in the plano-convex lens array are the same.
4. The apparatus according to claim 3, wherein the apparatus comprises: the specific method for processing the image acquired by the detector (9) by the image data processing unit to obtain the three-dimensional surface topography of the tested semiconductor wafer (4) comprises the following steps:
step1, calculating the deviation delta x and delta y of the light spot centroid in each sub-aperture relative to the x and y directions of a reference position;
step2, calculating the average slope of the wave fronts in the x and y directions in the sub-aperture range divided by the micro lens array (81):
wherein f is the focal length of the plano-convex lens, SxIs the average slope of the wavefront in the x-direction, SyThe average slope of the wavefront in the y-direction;
step3, adding SxAnd SySubstituting into finite difference model (formula 3) to calculate wavefront phase distribution
Wherein N is the number of rows and columns of the microlens array, h is the sub-aperture size of the microlens array,
the average slopes of the wave fronts in the x direction and the y direction in the sub-apertures with the position (i, j) in the micro-lens array are respectively;
and 4, two-dimensionally scanning the object stage (5) in a horizontal plane, repeating the steps 1-3 at each scanning position point, and finally splicing the obtained calculation results of the wavefront phase to be detected to obtain the three-dimensional surface morphology of the semiconductor wafer (4).
5. The apparatus for measuring surface topography of a semiconductor wafer based on dynamic quantitative phase imaging as claimed in claim 1, wherein: the binary optical device (8) is a mixed modulation grating and is used for carrying out amplitude and phase modulation on the light field incident to the surface of the binary optical device, the size of a light transmission part of the binary optical device is 2 times that of a light-tight part, and the light transmission part carries out phase modulation on the light field incident to the surface of the binary optical device according to phases 0 and pi; the phases 0 and pi are alternately distributed in a checkerboard manner.
6. The apparatus for measuring surface topography of a semiconductor wafer based on dynamic quantitative phase imaging as claimed in claim 5, wherein: the specific method for processing the image acquired by the detector (9) by the image data processing unit to obtain the three-dimensional surface topography of the tested semiconductor wafer (4) comprises the following steps:
step1, performing fast Fourier transform on an acquired interference image to acquire a spectrogram;
step2, extracting two positive first-level frequency spectrums in the orthogonal direction by using frequency domain filtering window functions respectively, wherein the frequency domain filtering window functions adopt Hamming functions which meet the following requirements:
in the formula: (x)0,y0) The coordinate of the center position of the primary spectrum is shown, and (x, y) are the coordinates of the primary spectrum in the x and y directions;
step3, calculating the extracted positive-level frequency spectrum by utilizing inverse Fourier transform to obtain the differential wavefront in the x and y directions
And
step4, differentiating the wavefront in the x and y directions
And
substituting into finite difference model (formula 5), calculating to obtain wavefront phase distribution
In the formula, sh is the transverse shearing amount;
and 5, two-dimensionally scanning the object stage (5) in a horizontal plane, repeating the steps 1-4 at each scanning position point, and finally splicing the calculation results of the wavefront phases to be detected to obtain the three-dimensional surface morphology of the semiconductor wafer (4).
7. The apparatus according to any of claims 1-6, wherein: the light source (1) is a laser light source or a white light source.
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| CN112577446A (en) * | 2020-12-23 | 2021-03-30 | 中国科学院西安光学精密机械研究所 | In-place surface shape splicing measuring device and method for large-caliber planar optical element |
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