TWI436029B - Three dimensional surface profilometer and microscopy, and the method using the same - Google Patents

Three dimensional surface profilometer and microscopy, and the method using the same Download PDF

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TWI436029B
TWI436029B TW100107449A TW100107449A TWI436029B TW I436029 B TWI436029 B TW I436029B TW 100107449 A TW100107449 A TW 100107449A TW 100107449 A TW100107449 A TW 100107449A TW I436029 B TWI436029 B TW I436029B
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light
tested
angle
surface topography
lens
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TW201237359A (en
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Ming Hung Chiu
Yuan Sheng Chan
Chen Tai Tan
Chau An Chen
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Univ Nat Formosa
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光學式強度型三維表面形貌與顯微量測裝置及方法Optical intensity type three-dimensional surface topography and microscopic measuring device and method

本發明係有關於一種光學式強度型三維表面形貌與顯微量測裝置及方法,尤指一種利用角度偏向與光學成像技術,藉由光感測陣列元件取出影像,由其二維圖像測量其面積尺寸大小,並由其光強度變化(反射率變量)轉換成高度值,而成三維之圖像之技術。The invention relates to an optical intensity type three-dimensional surface topography and microscopic measuring device and method, in particular to an image using an angle biasing and optical imaging technology to extract an image by a light sensing array element, and a two-dimensional image thereof A technique for measuring the size of an area and converting it into a height value by changing its light intensity (reflectance variable) into a three-dimensional image.

按目前所知表面粗糙度之測量,由於早期表面精密度要求不是那麼嚴謹,大都採取目視方法。但近來科技進步快,對於表面精密度的要求也越來越高了,為了加快線上檢驗速度與簡化儀器的複雜度,光強度法是比較好的選擇,由於架構與原理簡單,不管是光學系統的架設、調整與校正上,都很容易。一般而言,在量測上可分為接觸式跟非接觸式二大類,接觸式的量測如傳統的接觸探針式(stylus probe instrument)。為了得到較準確的測量值,一般是在待測物上之不同位置作了幾次的測量後,再計算出平均值,不過這需要花費相當多的時間,且對軟質材料而言,恐有刮傷其表面之虞。所以本發明提出非接觸式的量測方法可以在短時間內作量測的動作外,也不會破壞到待測物上的表面,影響到準確度。According to the current measurement of surface roughness, since the early surface precision requirements are not so rigorous, most of them adopt a visual method. However, recent advances in science and technology have made the requirements for surface precision higher and higher. In order to speed up the online inspection speed and simplify the complexity of the instrument, the light intensity method is a better choice. Because of the simple structure and principle, whether it is an optical system. It's easy to set up, adjust and correct. In general, measurement can be divided into two types of contact and non-contact, and contact measurement is like a traditional stylus probe instrument. In order to obtain a more accurate measurement value, it is generally calculated after several measurements at different positions on the object to be tested, and then the average value is calculated, but this takes a considerable amount of time, and for soft materials, there is fear Scratch the surface of the surface. Therefore, the present invention proposes that the non-contact measurement method can perform the measurement operation in a short time, and does not damage the surface on the object to be tested, thereby affecting the accuracy.

由於越來越多人提出三維表面的量測方法,所以2002年Chengping Zhang等人[如參考文獻6]提出一種數微鏡裝置(digital micromirror device)技術的顯微像位移輪廓儀,該數字微鏡裝置是連同其照明光學組合成一種三維立體顯微鏡,主要由計算產生的正弦光強分佈之條紋圖案通過顯微鏡,然後投影到要量測的物體表面上。由於物體表面的形狀使得條紋產生改變之後再藉由電荷耦合器(Charge-Coupled Device,CCD)記錄起來,之後再利用相位移的技術重建物體表面的顯微三維形貌。其實驗結果成功證明具備這種測量粗糙表面的技術之表面輪廓在微米等級。Since more and more people have proposed a three-dimensional surface measurement method, in 2002, Chengping Zhang et al. [such as Reference 6] proposed a microscopic image displacement profiler of a digital micromirror device technology. The mirror device is combined with its illumination optics to form a three-dimensional stereo microscope, which is mainly used to calculate the resulting sinusoidal light intensity distribution stripe pattern through the microscope and then onto the surface of the object to be measured. Due to the shape of the surface of the object, the stripe is changed and then recorded by a Charge-Coupled Device (CCD), and then the phase-displacement technique is used to reconstruct the microscopic three-dimensional shape of the surface of the object. The experimental results have successfully demonstrated that the surface profile of this technique for measuring rough surfaces is on the order of microns.

2001年Cz. Lukianowicz等人[如參考文獻7]提出非接觸之反射式的量測法量測粗糙度,且量測時以移動的方式,或旋轉的方法作量測,之後再由CCD擷取相對的光強度對像素的變化,即可得到粗糙度或形貌,不過此方法只以一維的方法呈現。In 2001, Cz. Lukianowicz et al. [Reference 7] proposed a non-contact reflective measurement method to measure the roughness, and measure it by moving or rotating, and then by CCD. Roughness or topography can be obtained by taking the relative light intensity versus pixel change, but this method is only presented in a one-dimensional method.

近期的2010年,在工業用途中,基於快速、準確地測量表面形貌、距離和厚度之原則下,Antonin Miks等人[如參考文獻1]所示提出非接觸光學測量像共焦理論,這些感測器是基於光學系統縱向色差波長的相依性,主要是將測量樣品的距離或厚度編碼成光譜資訊。此方法是非接觸式測量平行板的厚度,由於透明的樣品會有材料色散和畸變等問題,此量測誤差是以量測CCD光強度的變化,再作數值分析之後加以修正,得到待測物厚度跟距離。In 2010, in industrial applications, based on the rapid and accurate measurement of surface topography, distance and thickness, Antonin Miks et al. [Reference 1] proposed non-contact optical measurement like confocal theory. The sensor is based on the dependence of the longitudinal chromatic aberration wavelength of the optical system, mainly encoding the distance or thickness of the measured sample into spectral information. This method is a non-contact measurement of the thickness of the parallel plate. Since the transparent sample may have problems such as material dispersion and distortion, the measurement error is to measure the change of the CCD light intensity, and then perform numerical analysis to correct the object to be tested. Thickness and distance.

同年Yajun Wang等人[如參考文獻2]提出無相位展開的方式,以調整後的傅立葉(Fourier)轉換法量得三維的表面輪廓,主要架構是以投影機投射在待測物上之後再藉由CCD擷取未被展開相位之光強度變化,再結合由顏色資訊計算出相位移範圍,即可取得真正的相位值。In the same year, Yajun Wang et al. [J. 2] proposed a phase-free expansion method to measure the three-dimensional surface profile by the adjusted Fourier transform method. The main structure is to project the projector on the object to be tested. The true phase value can be obtained by taking the CCD to extract the intensity of the unexpanded phase and combining the phase shift range from the color information.

2006年,Oleg V. Angelsky等人[如參考文獻3]也是利用光學上非接觸的技術來測量粗糙的不均勻表面,主要架構是利用(Michelson’s interferometer)產生光程差,然後使用CCD拍攝干涉的圖形,再重建大面積的表面輪廓圖。In 2006, Oleg V. Angelsky et al. [see Reference 3] also used optically non-contact techniques to measure rough uneven surfaces. The main architecture was to use (Michelson's interferometer) to generate optical path differences, and then use CCD to capture interference. Graphics, and then reconstruct a large surface contour map.

2005年,Madhuri Thakur等人[如參考文獻4]利用Talbot interferometry量測透明待測物。主要架構是利用準直雷射光穿透一個光柵,產生具有週期性的圖形,之後再穿透待測物,最後再經過一光柵互相干涉,即產生托伯干涉條紋(Talbot interferometric fringes)。然後利用CCD拍攝干涉條紋,最後實驗結果同樣以探針的量測結果做比較。In 2005, Madhuri Thakur et al. [Reference 4] used Talbot interferometry to measure transparent analytes. The main structure is to use collimated laser light to penetrate a grating, produce a periodic pattern, then penetrate the object to be tested, and finally interfere with each other through a grating, that is, to generate Talbot interferometric fringes. Then the CCD is used to capture the interference fringes, and the final experimental results are also compared with the measurement results of the probes.

2005年,Jeong Seok Oh等人[如參考文獻5]提出飛秒雷射脈衝(Femtosecond laser pulses)表面輪廓量測儀,且討論了兩種方法來使用飛秒脈衝雷射當光源增強干涉,增強精密表面剖面測量。第一種是以一超快激光脈衝重複低,時間連續掃描干涉,原本這干涉術不適用於白光,但經改良後可使白光在這干涉術可有效使用;第二為飛秒脈衝雷射的高空間同調性,以一種相對小型的參考面,可以更大的光學測試在非對稱配置。這兩個優勢由Fizeau及Twyman-Green型掃描干涉實驗驗證。In 2005, Jeong Seok Oh et al. [Reference 5] proposed a Femtosecond laser pulses surface profilometer, and discussed two methods to use femtosecond pulsed lasers to enhance interference and enhance the source. Precision surface profile measurement. The first type is an ultra-fast laser pulse repeating low, time-continuous scanning interference. Originally, this interferometry is not suitable for white light, but improved white light can be effectively used in this interferometry; the second is femtosecond pulse laser The high spatial coherence, with a relatively small reference plane, allows for greater optical testing in an asymmetric configuration. These two advantages were verified by Fizeau and Twyman-Green scanning interference experiments.

綜整目前所知之表面形貌量測技術,尚無一種可快速且穩定及低成本量測裝置可嘉惠產業。為了幫助精密的工業量測能夠更有效快速的得到想要的大範圍表面形貌以及降低成本,鑑於雷射在光學的量測上速度快以及穩定等優點,且目前有關這方面技術之論文及專利並不多見。本發明人乃積極投入研究,在國科會計劃補助下,經不斷地實驗與研發,終有本發明成果產出。為求研發成果及心血獲得合法的權益保障,乃依法具文提出專利申請。In view of the currently known surface topography measurement technology, there is no such a fast, stable and low-cost measuring device that can benefit the industry. In order to help sophisticated industrial measurement to obtain the desired wide-area surface topography and cost reduction more efficiently and efficiently, in view of the advantages of laser speed and stability in optical measurement, and the current papers on this technology and Patents are rare. The inventor has actively invested in research, and under the program subsidy of the National Science Council, through continuous experimentation and research and development, the results of the invention are finally produced. In order to obtain research and development results and efforts to obtain legal protection of rights and interests, it is a legal application for patents.

本發明之主要目的,在於提供一種光學式強度型三維表面形貌與顯微量測裝置,其為一種以顯微的方法結合臨界角強度法和CCD光強度影像擷取來做為缺陷量測裝置。此技術可以讓精密量測產業與其他相關產業的發展速度快速提升。在操作上,因為可以簡化很多操作上的不方便,所以在學習操作上可以很快速的熟悉,而且因本發明為非接觸式的量測,在量測時不會造成量測上的損失,並避免不必要的時間跟金錢的浪費。The main object of the present invention is to provide an optical intensity type three-dimensional surface topography and microscopic measuring device, which is a microscopic method combined with a critical angular intensity method and a CCD light intensity image capturing as a defect measurement. Device. This technology can rapidly increase the speed of the precision measurement industry and other related industries. In operation, since many operational inconveniences can be simplified, the learning operation can be quickly familiar, and since the present invention is a non-contact measurement, it does not cause measurement loss during measurement. And avoid unnecessary time and waste of money.

達成前述目的之技術手段,係提供有光源、擴束器、偏極板、第二透鏡、偏極分光鏡、第二物鏡、旋轉平台、四分之一波片、第三透鏡、角度感測器及矩陣式光感測器。以光源發射一光束;光束經擴束器擴大為平行光束;平行光束經偏極板成為P偏振光;P偏振光光束穿透第二透鏡與偏極分光鏡後緊接著經過該四分之一波片成為圓偏極,並經第二物鏡而投射至一待測物上;第二物鏡供來自待測物之反射光穿越返回偏極分光鏡,以放大待測物表面形貌;以第三透鏡供自偏極分光鏡返回的反射光通過;以角度感測器在臨界角附近做為微小角度感測;及以矩陣式光感測器拍攝及擷取待測物反射光之光強度變化,並傳送至一電腦進行處理,由所擷取之二維影像測量其面積尺寸大小,並由其強度變化(或反射率變量)而轉換成高度值,進而形成三維之影像。The technical means for achieving the foregoing object is to provide a light source, a beam expander, a polarizing plate, a second lens, a polarizing beam splitter, a second objective lens, a rotating platform, a quarter wave plate, a third lens, and an angle sensing. And matrix light sensors. A light beam is emitted by the light source; the light beam is expanded into a parallel beam by the beam expander; the parallel light beam is P-polarized light through the polarizing plate; the P-polarized light beam passes through the second lens and the polarizing beam splitter and then passes through the quarter The wave plate becomes circularly polarized and projected onto a test object through the second objective lens; the second objective lens supplies the reflected light from the object to be tested through the returning polarizing beam splitter to enlarge the surface topography of the object to be tested; The three lenses are used for the reflected light returning from the polarizing beam splitter; the angle sensor is used as a small angle sensing near the critical angle; and the light intensity of the reflected light of the object to be tested is captured by the matrix light sensor The change is transmitted to a computer for processing, and the size of the area is measured by the captured 2D image, and converted into a height value by the intensity change (or reflectance variable) to form a three-dimensional image.

壹.本發明之技術構想one. Technical idea of the invention

本發明之主要構想,係利用光學快速量測之優點,以及架構簡單化、便宜化、操作單純化等作為考量。本發明係將光強度量測的方法結合臨界角與CCD擷取影像技術,即時利用待測物反射回CCD的光強度變化,迅速轉換成3D形貌,從3D圖我們可以即時的得知我們想要的待測物表面的缺陷以及粗糙度變化情形。而且,本發明架構也具有顯微的效果,在量測上也具有高靈敏度、高解析度等優點。The main idea of the present invention is to take advantage of the advantages of optical rapid measurement, as well as simplifying the structure, simplifying the operation, and simplifying the operation. The invention combines the method of measuring the light intensity with the critical angle and the CCD image capturing technology, and instantly converts the light intensity reflected back to the CCD by the object to be tested, and quickly converts into a 3D shape. From the 3D image, we can immediately know us. The desired defect on the surface of the object to be tested and the change in roughness. Moreover, the structure of the present invention also has a microscopic effect, and has the advantages of high sensitivity, high resolution, and the like in measurement.

由於需要在全反射與臨界角附近來回轉動稜鏡,且希望所得到的兩個圖面能完全重疊,才能真正算出此待測面的反射率分布圖,機構上的誤差可能會因為長時間的運動而造成量測上的誤差,因此也必須有自動校正的功能。Since it is necessary to rotate the crucible in the vicinity of the total reflection and the critical angle, and it is hoped that the two planes obtained can completely overlap, the reflectance distribution map of the surface to be tested can be truly calculated, and the error in the mechanism may be due to a long time. The motion causes errors in the measurement, so there must also be an automatic correction function.

貳.本發明之技術原理two. Technical principle of the invention 1.平行四邊形稜鏡入射外角與反射率之關係1. The relationship between the incident external angle and the reflectivity of the parallelogram

本發明之架構,主要是以S偏振光作為平行四邊形稜鏡內部的反射率變化,由於S偏振光在平行四邊形稜鏡內部經過兩次的反射之後可以得到較為接近線性的曲線,之後再取其斜率之平均值,由於斜率與平行四邊形稜鏡的反射率以及平行四邊形稜鏡的外部入射角θ之間有相對的關係,本發明人乃將之加以應用。本發明人首先研究如何求得反射率,以及反射率與平行四邊形稜鏡的外部入射角θ之間的關係式。根據成像系統,主要是利用ABCD矩陣來作為追求光軌跡的變化外,如離軸高度以及光線的傾斜角度,最後再跟本發明所求得之反射率對表面高度的變化作進一步結合,即可利用CCD所攝取到的圖片來作為得到三維表面高度變化的依據。所以在成像系統中,本發明會推導待測物表面的高度變化與平行四邊形稜鏡入射角度的關係,進而求得平行四邊形稜鏡反射率與待測物表面的關係式。由此得知,只要知道反射率的變化,即可知道待測物的表面高度。在量得反射率的同時必需考慮到光強度的變動,所以對於CCD畫面的攝取要很謹慎,因此重複性的畫面攝取是必要的,最後再取其光強度平均值來作為求取表面高度的依據。本發明之技術有如顯微鏡的功能,不但可以看清楚待測物的表面輪廓之外,還可以求得三維的表面變化,所以本發明架構不但有其量測3D之效果,亦可做為表面檢驗,如粗糙度、表面形貌或缺陷等量測。The architecture of the present invention mainly uses S-polarized light as the reflectance change inside the parallelogram, and the S-polarized light can obtain a relatively linear curve after two reflections in the parallelogram, and then take it. The average value of the slope is applied by the present inventors because of the relative relationship between the slope and the reflectance of the parallelogram 稜鏡 and the external incident angle θ of the parallelogram 稜鏡. The inventors first studied how to obtain the reflectance and the relationship between the reflectance and the external incident angle θ of the parallelogram 稜鏡. According to the imaging system, the ABCD matrix is mainly used as the pursuit of the change of the light trajectory, such as the off-axis height and the tilt angle of the light, and finally combined with the reflectance of the present invention to further change the surface height. The image taken by the CCD is used as a basis for obtaining a three-dimensional surface height change. Therefore, in the imaging system, the present invention derives the relationship between the height change of the surface of the object to be tested and the incident angle of the parallelogram, and further determines the relationship between the reflectivity of the parallelogram and the surface of the object to be tested. From this, it is known that as long as the change in reflectance is known, the surface height of the object to be tested can be known. In order to measure the reflectance, it is necessary to take into account the variation of the light intensity. Therefore, it is necessary to take care of the CCD image. Therefore, repetitive image capture is necessary. Finally, the average light intensity is taken as the surface height. in accordance with. The technology of the present invention has the function of a microscope, not only can clearly see the surface contour of the object to be tested, but also can obtain a three-dimensional surface change, so the structure of the invention not only has the effect of measuring 3D, but also can be used as a surface inspection. Such as roughness, surface topography or defects.

如圖1所示,反射光於平行四邊形稜鏡200內部作兩次之反射。由邊界條件以及Snell’s法則(law)可求出兩次反射之反射率對外角θ之關係式,如式(1)及式(1-1)與式(1-2)所示:As shown in Fig. 1, the reflected light is reflected twice inside the parallelogram 稜鏡200. From the boundary conditions and the Snell's law, the relationship between the reflectance of the two reflections and the external angle θ can be obtained, as shown by the equations (1) and (1-1) and (1-2):

由式(1),我們可以利用MATLAB軟體(MATLAB是MATrix LABoratory的縮寫,是由美國MathWorks公司出品的商業數學軟體)模擬出如圖2所示之結果。不過為了更能證明此曲線之方程式的正確性,由圖3之實際量測平行四邊形之反射率曲線,加以比較之。因此,由圖3我們可以了解到最大的斜率約在5.608度,此角度為臨界角θC (此時角度是指外角θ),該附近角度之反射率變化是最靈敏的。由於本發明之架構是以S偏極作為主要平行四邊形稜鏡之反射率,所以量測上可以比P偏極有較大的高度量測範圍,因為線性的範圍較大,可以有較大的入射外角θ。From equation (1), we can use the MATLAB software (MATLAB is the abbreviation of MATRIX LABoratory, which is a commercial mathematics software produced by MathWorks, USA) to simulate the results shown in Figure 2. However, in order to better prove the correctness of the equation of this curve, the reflectance curve of the parallelogram is actually measured by Fig. 3 and compared. Therefore, we can see from Fig. 3 that the maximum slope is about 5.608 degrees, which is the critical angle θ C (where the angle refers to the outer angle θ), and the change in reflectance of the nearby angle is the most sensitive. Since the architecture of the present invention uses the S-polarity as the reflectivity of the main parallelogram, the measurement can have a larger height measurement range than the P-polarization, because the linear range is larger and can have a larger The incident external angle θ.

2.成像系統與反射率之關係2. The relationship between imaging system and reflectivity

本發明之架構中的成像系統如圖4所示,主要是由一個第二物鏡(Objective2)17與一個第三透鏡(Lens3)18所組成,最後成像於電荷耦合器CCD(Charge-Coupled Device)上。因此我們可以根據ABCD矩陣,如式(2)所示,最後我們可以得到如式(3)所示之角度變化關係與式(4)所示之離光軸距離x 3x s 之關係:The imaging system in the architecture of the present invention is mainly composed of a second objective lens 17 and a third lens (Lens3) 18, and finally formed on a charge coupled device CCD (Charge-Coupled Device). on. So we can according to the ABCD matrix, as shown in equation (2), and finally we can get the angle shown in equation (3) The relationship between the change relationship and the distance from the optical axis x 3 , x s shown in equation (4):

從式(3)中可以決定當入射於平行四邊形稜鏡(Parallelogram Prism)時之入射角度,不過於本架構中之還需考慮到偏極分光鏡(Polarizing Beamsplitter,PBS)所造成之角度變化,所以式(3)還需乘於一個負號,也就是令為真正入射於平行四邊形稜鏡之角度變化量。從式(4)中則可以決定我們想的放大倍率。圖5所示,為表面高度之幾何圖形。我們將由近似的方法求得式(5),且代入式(3)得到式(6)角度對高度之變化。From equation (3), the angle of incidence when incident on Parallelogram Prism can be determined. However, in this architecture, the angle variation caused by Polarizing Beamsplitter (PBS) must be considered. Therefore, equation (3) also needs to be multiplied by a negative sign, that is, The amount of change in angle that is truly incident on the parallelogram. From equation (4) we can determine the magnification we want. Figure 5 shows the geometry of the surface height. We will find the equation (5) from the approximate method and substituting equation (3) to obtain the angle-to-height variation of equation (6).

式(7)為平行四邊形稜鏡之入射角度對反射率之斜率關係,因此由式(8)代入式(6)我們可以得到式(9),再由式(10)簡化成式(11)所示之反射率對表面高度變化之關係式:Equation (7) is the slope relationship between the incident angle and the reflectivity of the parallelogram ,, so we can get the equation (9) by substituting equation (8) and then reduce it to equation (11) by equation (10). The relationship between the reflectivity shown and the change in surface height:

ΔhR s 2M  (11)Δ hR s 2M (11)

3.系統架構:3. System architecture:

由前面介紹後發現,我們可以利用簡單的架構跟幾何原理來量測出我們想要的表面高度變化量。起先將簡短地介紹一下本發明所使用的實驗架構,如圖6所示。在軟體方面主要是使用Matlab軟體來計算出待測物表面高度變化以及粗糙度,最後顯示出三維圖形。三維圖形的好處在於我們可以快速的看出待測物的表面變化情況或缺陷,而且本架構可以即時的作大範圍的量測,避免時間的等待。From the previous introduction, we can use the simple architecture and geometric principle to measure the amount of surface height change we want. The experimental architecture used in the present invention will be briefly introduced at first, as shown in FIG. In terms of software, Matlab software is mainly used to calculate the surface height variation and roughness of the object to be tested, and finally displays a three-dimensional figure. The advantage of 3D graphics is that we can quickly see the surface changes or defects of the object under test, and the architecture can be used for a wide range of measurements in real time, avoiding the waiting time.

3.1光學元件及儀器介紹3.1 Introduction to optical components and instruments

如圖6所示,本發明一種具體實施例之系統架構,係包括:光源10,其用以發射出光束,其可為單一波長(波長為632.8nm)之系統光源,或雷射光源,本發明具體實施例係為雷射光源;光阻隔器(Isolator)11,其供來自光源的光束經過,用以避免系統的反射光返回光源,而造成光源的損傷;擴束器(Beam Expander)12,其接收來自光阻隔器11光束,用以將光束擴大為平行光束,本發明一種具體實施例,擴束器12包括一第一物鏡120、一第一透鏡121,及介於第一物鏡120與第一透鏡121之間的銷孔122;其中第一物鏡120用以使光束經銷孔122後為擴大光束,其焦距上設一空間濾波器(Spatial Filter)(圖中未示),以便濾除雜散光源;而第一透鏡121用以使擴大光束成平行光束;偏極板(Polarizer)13,其具調整角度功能,用以改變來自擴束器12之光束的光偏極的方向;第二透鏡(Lens)14,其用以將來自偏極板13之光束擴大及聚焦光點;偏極分光鏡(Polarizing Beamsplitter,PBS)15,其用以供來自該第二透鏡14之光束通過並投射至一待測物30上;第二物鏡(Objective)17,其介於偏極分光鏡15與待測物30之間,其供來自偏極分光鏡15之光束穿越而投射在待測物30表面,並供來自待測物30之反射光穿越返回偏極分光鏡15,以作為放大待測物30表面形貌;四分之一波片(Wave plate)16,其介於偏極分光鏡15與第二物鏡17之間,來自偏極分光鏡15之光束經過該波片16,會變成圓偏極光;第三透鏡18,用以供自該偏極分光鏡15返回的該反射光通過;旋轉平台(Rotation Stage)19,其為一可改變角度的平台;角度感測器20,其置設在旋轉平台19上,利用旋轉平台19旋轉角度感測器20,使來自第三透鏡18的反射光入射角度感測器20做多次反射,並控制在臨界角附近對反射光做為微小角度感測,本發明一種具體實施例中,該角度感測器20為一有鍍膜的平行四邊形稜鏡(Parallelogram Prism),其反射次數為兩次;及矩陣式光感測器21,用來拍攝及擷取待測物反射光之光強度變化,並傳送至一電腦22進行處理而計算出待測物30的表面形貌;本發明一種具體實施例,矩陣式光感測器21為電荷耦合器(Charge-Coupled Device,CCD)。As shown in FIG. 6, the system architecture of a specific embodiment of the present invention includes: a light source 10 for emitting a light beam, which can be a single wavelength (wavelength of 632.8 nm) system light source, or a laser light source, DETAILED DESCRIPTION OF THE INVENTION The invention is a laser source; a light blocker (Isolator) 11 for passing a light beam from a light source to prevent the reflected light of the system from returning to the light source, thereby causing damage to the light source; Beam Expander 12 Receiving a light beam from the light blocker 11 for expanding the light beam into a parallel light beam. In one embodiment of the present invention, the beam expander 12 includes a first objective lens 120, a first lens 121, and a first objective lens 120. The pinhole 122 is disposed between the first lens 121 and the first lens 121. The first objective lens 120 is configured to expand the beam after passing the beam through the pin hole 122, and a spatial filter (not shown) is disposed on the focal length for filtering. In addition to the stray light source; the first lens 121 is used to make the enlarged beam into a parallel beam; the Polarizer 13 has an angle adjustment function for changing the direction of the light polarization of the beam from the beam expander 12; a second lens (Lens) 14 for The light beam from the polarizing plate 13 expands and focuses the light spot; a Polarizing Beamsplitter (PBS) 15 for the light beam from the second lens 14 to pass through and project onto the object to be tested 30; An objective lens 17 is interposed between the polarizing beam splitter 15 and the object to be tested 30. The light beam from the polarizing beam splitter 15 passes through and is projected on the surface of the object to be tested 30, and is supplied from the object to be tested 30. The reflected light passes through the returning polarizing beam splitter 15 to amplify the surface topography of the object to be tested 30; a quarter wave plate ( Wave plate 16 is interposed between the polarizing beam splitter 15 and the second objective lens 17. The light beam from the polarizing beam splitter 15 passes through the wave plate 16 and becomes a circularly polarized light; the third lens 18 is used for The reflected light returned by the polarizing beam splitter 15 passes through; a Rotation Stage 19, which is an angle-changeable platform; an angle sensor 20, which is disposed on the rotating platform 19 and rotated by the rotating platform 19. The angle sensor 20 causes the reflected light incident angle sensor 20 from the third lens 18 to be reflected multiple times, and controls the reflected light to be slightly angled near the critical angle. In a specific embodiment of the present invention, The angle sensor 20 is a coated Parallelogram Prism, and the number of reflections is twice; and the matrix photo sensor 21 is used for capturing and extracting the light intensity of the reflected light of the object to be tested. The change is transmitted to a computer 22 for processing to calculate the surface topography of the object to be tested 30. In one embodiment of the present invention, the matrix photosensor 21 is a Charge-Coupled Device (CCD).

3.2量測結果3.2 Measurement results

本發明之實驗架構如圖6所示,以氦氖雷射(He-Ne Laser)當作光源10,經過一光阻隔器(Isolator)11以避免光學系統的反射光返回雷射內部,再由擴束器(Beam Expander)12擴大為平行光束,之後經過偏極板13(P(0°))成為P偏振光,當光束穿透第二透鏡14與偏極分光鏡(PBS)15後緊接著經過四分之一波片16成為圓偏極,之後要測量的待測物30樣本(本發明以光柵及λ/20標準片為主)經光束照射後,將再經由第二物鏡17、偏極分光鏡15、第三透鏡18、角度感測器20成像在矩陣式光感測器21上。矩陣式光感測器21(即電荷耦合器(CCD))是藉由通用型串列匯流連接埠(USB)直接連至電腦22,最後可由電腦22上的軟體秀出CCD所拍攝的影像,主要是各別於全反射(0°)以及臨界角(5.608°)附近時各拍攝一張灰階之光強度變化圖,分別為Io2 以及Io1 ,然後再利用Matlab軟體作分析,其所拍攝之光強度變化圖以Rs2 =Io1 /Io2 下去求出二次反射過後之反射率,再利用式(11)得到高度變化,最後畫出三維輪廓圖。然而角度感測器20(即平行四邊形稜鏡(Parallelogram Prism))是搭配旋轉平台(Rotation Stage)19,利用旋轉平台19控制角度感測器20來回轉動於全反射角與臨界角之間。首先以λ /20之標準做為系統誤差量測,由本發明之實驗架構量出的表面粗糙度值減去由原子力顯微鏡量出的粗糙度值(當作基準值),來估計本發明之實驗架構存在的系統誤差之後再利用式(12)、式(13)修正系統誤差。The experimental framework of the present invention is shown in FIG. 6. The He-Ne Laser is used as the light source 10, and passes through a light blocker (Isolator) 11 to prevent the reflected light of the optical system from returning to the inside of the laser. The Beam Expander 12 is expanded into a parallel beam, and then becomes P-polarized light through the polarizing plate 13 (P(0°)), and is tight after the beam penetrates the second lens 14 and the polarizing beam splitter (PBS) 15. Then, after the quarter wave plate 16 becomes a circularly polarized pole, the sample of the object to be tested 30 to be measured (the present invention is mainly composed of a grating and a λ/20 standard sheet) is irradiated by the light beam, and then passes through the second objective lens 17, The polarization beam splitter 15, the third lens 18, and the angle sensor 20 are imaged on the matrix photosensor 21. The matrix photosensor 21 (ie, the charge coupled device (CCD)) is directly connected to the computer 22 by a universal serial bus connection (USB), and finally the image taken by the CCD can be displayed by the software on the computer 22. Mainly different from the total reflection (0 °) and the critical angle (5.608 °) when shooting a gray scale light intensity change map, respectively I o2 and I o1 , and then use Matlab software for analysis, its The intensity map of the captured light is obtained by R s2 =I o1 /I o2 to obtain the reflectance after the secondary reflection, and then the height is changed by the equation (11), and finally the three-dimensional contour map is drawn. However, the angle sensor 20 (ie, Parallelogram Prism) is a Rotation Stage 19 that is used to control the angle sensor 20 to rotate back and forth between the total reflection angle and the critical angle. First, the λ / 20 standard is used as the systematic error measurement, and the surface roughness value measured by the experimental framework of the present invention is subtracted from the roughness value (as a reference value) measured by the atomic force microscope to estimate the experiment of the present invention. After systematic errors exist in the architecture, the system errors are corrected by using equations (12) and (13).

3.2.1非穿透型待測物之量測結果(λ/20標準片)3.2.1 Measurement results of non-penetrating test objects (λ/20 standard)

首先將由矩陣式光感測器21為電荷耦合器(Charge-Coupled Device,CCD)於全反射以及臨界角附近所拍攝的光強度變化之灰階圖形,得到I o 1 以及I o 2 ,即可推得反射率R s 2 進而求出高度變化。圖7為λ/20標準片之三維圖形。First, the matrix light sensor 21 is a charge-coupled device (CCD) for the total reflection and the gray-scale pattern of the light intensity change taken near the critical angle to obtain I o 1 and I o 2 . The reflectance R s 2 is derived to determine the height change. Figure 7 is a three-dimensional graph of a λ/20 standard sheet.

3.2.2穿透型待測物之量測結果(Grating光柵)3.2.2 Measurement results of penetrating test objects (Grating grating)

請配合參看圖6、8及9所示,同樣地利用矩陣式光感測器21(即電荷耦合器(Charge-Coupled Device,CCD))拍攝時將其角度感測器20(即平行四邊形稜鏡(Parallelogram Prism))轉至全反射角以及臨界角附近後,利用CCD各拍攝一張光強度變化之灰階圖形,得到I o 1 以及I o 2 ,即可推得反射率R s 2 進而求出高度變化,如圖8為20lines/mm光柵之三維圖形,而圖9為圖8所量測y軸於150μm距離之曲線圖。其拍攝前需調整待測物30表面至第二物鏡17之焦平面上,並使CCD影像清晰,最好的調整方法是先於臨界角時作調整,由於臨界角附近時反射率的變化較為靈敏,所以可以很明顯地得到較高對比度的變化。Please refer to FIGS. 6, 8, and 9, and similarly use the matrix photosensor 21 (ie, Charge-Coupled Device (CCD)) to take its angle sensor 20 (ie, parallelogram ribs). After the mirror (Parallelogram Prism) is turned to the total reflection angle and the vicinity of the critical angle, a gray-scale pattern of light intensity changes is taken by the CCD to obtain I o 1 and I o 2 , and the reflectance R s 2 can be derived. The height change is obtained, as shown in Fig. 8 as a three-dimensional pattern of a 20 lines/mm grating, and Fig. 9 is a graph of the y-axis measured at a distance of 150 μm in Fig. 8. Before shooting, it is necessary to adjust the surface of the object to be tested 30 to the focal plane of the second objective lens 17 and make the CCD image clear. The best adjustment method is to adjust the angle before the critical angle, because the reflectance changes near the critical angle. Sensitive, so you can clearly get a higher contrast change.

3.2.2 系統誤差修正3.2.2 Systematic error correction

本發明系統誤差修正係以λ /20標準片作討論,且利用原子力顯微鏡(AFM)所量測之粗糙度作為標準依據,然後求得更接近AFM所量測之M值。因為本發明架構所測得之粗糙度為AFM所測得之粗糙度之a倍,因此我們令本發明架構之M值為(12)式,且(12)式之a倍如(13)式所示,此a值為修正之倍率。最後利用MATLAB求粗糙度時,只要令本架構之原m 值為(m /a ),經過修正之系統誤差後,本發明架構所測得之S a (Average Roughness)與S q (Root Mean Square)[8]將跟AFM所測得之S a S q 相同。The system error correction of the present invention is discussed in the λ / 20 standard sheet, and the roughness measured by atomic force microscopy (AFM) is used as a standard basis, and then the M value measured closer to AFM is obtained. Since the roughness measured by the architecture of the present invention is a times the roughness measured by the AFM, we have the M value of the structure of the present invention being (12), and the a (b) of the formula (12) is as the formula (13) As shown, this a value is the corrected magnification. Finally, when using MATLAB to find the roughness, as long as the original m value of the architecture is ( m / a ), after the corrected systematic error, the S a (Average Roughness) and S q (Root Mean Square) measured by the architecture of the present invention. ) [8] will be the same as S a and S q measured by AFM.

肆.結論Hey. in conclusion

本發明技術範疇為光學反射式、非破壞性、大面積、可快速檢驗之表面輪廓與粗糙度量測。若將物鏡之放大倍率增加可獲取如三維顯微鏡的功效。不須掃瞄或斷層或影像堆疊,可直接求得三維之影像。更重要的是本發明所研發出的架構,可以作大面積的量測,因此不但能節省時間成本外,亦不會破壞待測物的表面,不管是非穿透式或是穿透式的待測物,只要有足夠的反射光強度,都可以做量測。本發明技術屬一種光學式強度型三維表面形貌與顯微量測裝置。本發明可作為瑕疵、缺陷、表面分析或粗糙度等量測。本發明可作為薄膜厚度量測。本發明可作為透明與非透明材料表面量測。本發明屬一種類似光學系統(如顯微鏡)二維影像加上表面高度資訊所構成的三維電子影像。本發明是一種利用光強度或反射率轉換成表面高度的一種量測裝置。本發明乃是一種利用矩陣式光感測器(例如:電荷耦合器CCD,或互補式金屬氧化物半導體(Complementary Metal-Oxide-Semiconductor,CMOS)作為擷取待測物影像,其每點上光強度作為量測表面高度的資訊。本發明是包含利用表面高度變化所造成的反射光線角度變化的一種裝置。本發明是包含利用光線角度偏向造成的反射率或光強度改變的一種裝置。本發明之反射率範圍由0~1.0,角度範圍為±0~10度,表面高度量測範圍為0.1nm~1mm,縱向解析度為0.1nm~100μm;橫向解析度為0.1μm~100μm;放大倍率可為0.1~200倍。本發明所使用之角度感測器是一種反射率或光強度對入射角變化之轉換,可以為稜鏡或有鍍膜之元件。本發明所使用之光源為單一波長光源或採用雷射。The technical scope of the present invention is optical reflective, non-destructive, large-area, and quick-test surface contour and roughness measurement. If the magnification of the objective lens is increased, the efficiency of a three-dimensional microscope can be obtained. Three-dimensional images can be directly obtained without scanning or faulting or image stacking. More importantly, the architecture developed by the present invention can be used for large-area measurement, thereby not only saving time and cost, but also destroying the surface of the object to be tested, whether it is non-transmissive or penetrating. The measurement object can be measured as long as there is sufficient reflected light intensity. The invention belongs to an optical intensity type three-dimensional surface topography and microscopic measuring device. The invention can be used as a measurement of defects, defects, surface analysis or roughness. The invention can be used as a film thickness measurement. The invention can be used as a surface measurement for transparent and non-transparent materials. The invention belongs to a three-dimensional electronic image composed of a two-dimensional image of an optical system (such as a microscope) plus surface height information. The present invention is a measuring device that converts light intensity or reflectance into surface height. The present invention is a method of using a matrix type photo sensor (for example, a charge coupled device CCD, or a complementary metal-oxide-semiconductor (CMOS)) to extract an image of a test object, which is glazed at each point. Intensity is used as a measure of the height of the surface. The present invention is a device comprising a change in the angle of reflected light caused by a change in surface height. The invention is a device comprising a change in reflectance or light intensity caused by the deflection of the angle of the light. The reflectance range is from 0 to 1.0, the angle range is from ±0 to 10 degrees, the surface height measurement range is from 0.1 nm to 1 mm, the longitudinal resolution is from 0.1 nm to 100 μm, and the lateral resolution is from 0.1 μm to 100 μm; the magnification can be The angle sensor used in the present invention is a conversion of reflectance or light intensity to incident angle change, and may be a germanium or a coated component. The light source used in the present invention is a single wavelength light source or Use a laser.

以上所述,僅為本發明之一可行實施例,並非用以限定本發明之專利範圍,凡舉依據下列請求項所述之內容、特徵以及其精神而為之其他變化的等效實施,皆應包含於本發明之專利範圍內。本發明除上述優點外,並深具產業之利用性,可有效改善習用所產生之缺失,而且所具體界定於請求項之特徵,未見於同類物品,故而具實用性與進步性,已符合新型專利要件,爰依法具文提出申請,謹請 鈞局依法核予專利,以維護本申請人合法之權益。The above is only one of the possible embodiments of the present invention, and is not intended to limit the scope of the patents of the present invention, and the equivalent implementations of other changes according to the contents, features and spirits of the following claims are It should be included in the scope of the patent of the present invention. In addition to the above advantages, the invention has deep industrial applicability, can effectively improve the lack of use, and is specifically defined in the characteristics of the request item, is not found in the same kind of articles, so it is practical and progressive, and has been in line with the new type. For patents, the application shall be filed in accordance with the law. The Bureau shall be required to approve the patent in accordance with the law to protect the lawful rights and interests of the applicant.

10...光源10. . . light source

11...光阻隔器11. . . Light blocker

12...擴束器12. . . Beam expander

120...第一物鏡120. . . First objective

121...第一透鏡121. . . First lens

122...銷孔122. . . Pin hole

13...偏極板13. . . Polar plate

14...第二透鏡14. . . Second lens

15...偏極分光鏡15. . . Polar spectroscope

16...四分之一波片16. . . Quarter wave plate

17...第二物鏡17. . . Second objective

18...第三透鏡18. . . Third lens

19...旋轉平台19. . . Rotating platform

20...角度感測器20. . . Angle sensor

200...平行四邊形稜鏡200. . . Parallelogram

21...矩陣式光感測器twenty one. . . Matrix light sensor

22...電腦twenty two. . . computer

30...待測物30. . . Analyte

圖1為本發明光線於平行四邊形稜鏡內作兩次反射示意圖;圖2為本發明兩次S偏光反射之反射率對外角的變化模擬圖;圖3為本發明平行四邊形稜鏡之反射率實際量測曲線圖;圖4為本發明架構之成像系統示意圖;圖5為本發明待測物之幾何高度示意圖;1 is a schematic diagram showing two reflections of light in a parallelogram crucible according to the present invention; FIG. 2 is a simulation diagram of a change in reflectance of two S-polarized reflections according to the present invention; FIG. 3 is a reflectance of a parallelogram of the present invention. FIG. 4 is a schematic diagram of an imaging system of the architecture of the present invention; FIG. 5 is a schematic diagram of geometric heights of the object to be tested according to the present invention;

圖6為本發明實驗架構圖;Figure 6 is an experimental structural diagram of the present invention;

圖7為本發明λ/20標準片之量測3D圖(包含系統誤差);Figure 7 is a 3D diagram of the λ/20 standard sheet of the present invention (including systematic errors);

圖8為本發明20lines/mm光柵之量測3D圖(包含系統誤差);及Figure 8 is a 3D diagram (including system error) of the 20 lines/mm grating of the present invention;

圖9為本發明取出圖8之y軸於150μm距離之曲線圖(包含系統誤差)。Figure 9 is a graph (including systematic error) for taking the y-axis of Figure 8 at a distance of 150 μm for the present invention.

附件:參考文獻。Attachment: References.

10...光源10. . . light source

11...光阻隔器11. . . Light blocker

12...擴束器12. . . Beam expander

120...第一物鏡120. . . First objective

121...第一透鏡121. . . First lens

122...銷孔122. . . Pin hole

13...偏極板13. . . Polar plate

14...第二透鏡14. . . Second lens

15...偏極分光鏡15. . . Polar spectroscope

16...四分之一波片16. . . Quarter wave plate

17...第二物鏡17. . . Second objective

18...第三透鏡18. . . Third lens

19...旋轉平台19. . . Rotating platform

20...角度感測器20. . . Angle sensor

21...矩陣式光感測器twenty one. . . Matrix light sensor

22...電腦twenty two. . . computer

30...待測物30. . . Analyte

Claims (10)

一種光學式強度型三維表面形貌與顯微量測裝置,其包括:一光源,其用以發射出光束;一擴束器,其接收該光束,用以將光束擴大為平行光束;一偏極板,其具調整角度功能,用以改變該平行光束的光偏極的方向;一第二透鏡,其用以將來自該偏極板之光束擴大及聚焦光點;一偏極分光鏡,其用以供來自該第二透鏡之光束通過並投射至一待測物上;一第二物鏡,其介於該偏極分光鏡與該待測物之間,其供來自偏極分光鏡之光束穿越而投射在該待測物表面,並供來自該待測物之反射光穿越返回該偏極分光鏡,以作為放大一待測物表面形貌;一旋轉平台,其為一可改變角度的平台,並可於全反射與臨界角之間往復轉動;一四分之一波片,其介於該偏極分光鏡與該第二物鏡之間,來自該偏極分光鏡之光束經過該波片,會變成圓偏極光;一第三透鏡,用以供自該偏極分光鏡返回的該反射光通過;一角度感測器,其置設在旋轉平台上,用以接收來自該第三透鏡的該反射光,並讓該反射光做多次反射,以在全反射與臨界角附近做為微小角度感測之用;一矩陣式光感測器,用來拍攝及擷取來自該角度感測器之反射光的光強度變化,可於全反射以及臨界角附近各拍攝一張光強度變化之 灰階圖形;及一電腦,用以接收將該二灰階圖形,並由該二灰階圖形測量該待測物之面積尺寸,再對該二灰階圖形進行反射率分佈的分析,以求出二次反射過後之反射率,並由反射率變量而轉換成高度值,進而形成該待測物之三維影像。 An optical intensity type three-dimensional surface topography and microscopic measuring device, comprising: a light source for emitting a light beam; and a beam expander receiving the light beam for expanding the light beam into a parallel light beam; a plate having an angle adjustment function for changing a direction of a light deflecting pole of the parallel beam; a second lens for expanding and focusing a light beam from the polarizing plate; a polarizing beam splitter, The light beam from the second lens passes through and is projected onto a sample to be tested; a second objective lens is interposed between the polarized beam splitter and the object to be tested, and is supplied from the polarizing beam splitter. The light beam passes through and is projected on the surface of the object to be tested, and the reflected light from the object to be tested is traversed back to the polarizing beam splitter to amplify the surface topography of the object to be tested; a rotating platform, which is a changeable angle a platform that is reciprocally rotatable between total reflection and a critical angle; a quarter-wave plate interposed between the polarizing beam splitter and the second objective lens, the light beam from the polarizing beam splitter passing through Wave plate, will become a circular aurora; a third lens, with The reflected light returned from the polarizing beam splitter passes; an angle sensor disposed on the rotating platform for receiving the reflected light from the third lens and allowing the reflected light to be reflected multiple times For microscopic angle sensing near total reflection and critical angle; a matrix light sensor for capturing and capturing light intensity changes from the angle sensor, for total reflection And a light intensity change near each of the critical angles a gray scale graphic; and a computer for receiving the two gray scale pattern, and measuring an area size of the object to be tested by the two gray scale pattern, and then performing a reflectance distribution analysis on the second gray scale pattern to obtain The reflectance after the second reflection is converted into a height value by the reflectance variable, thereby forming a three-dimensional image of the object to be tested. 如請求項1所述之光學式強度型三維表面形貌與顯微量測裝置,其中,該光源為一單一波長光源,其波長為632.8nm。 The optical intensity type three-dimensional surface topography and microscopic measuring device according to claim 1, wherein the light source is a single wavelength light source having a wavelength of 632.8 nm. 如請求項1所述之光學式強度型三維表面形貌與顯微量測裝置,其中,該光源為一雷射光源。 The optical intensity type three-dimensional surface topography and microscopic measuring device according to claim 1, wherein the light source is a laser light source. 如請求項1所述之光學式強度型三維表面形貌與顯微量測裝置,其中,該光源與該擴束器之間設一光阻隔器,該光阻隔器供來自光源的光束經過,用以避免系統的反射光返回該光源。 The optical intensity type three-dimensional surface topography and microscopic measuring device according to claim 1, wherein a light blocker is disposed between the light source and the beam expander, and the light blocker passes the light beam from the light source. To avoid the reflected light from the system return to the source. 如請求項1所述之光學式強度型三維表面形貌與顯微量測裝置,其中,該角度感測器為一平行四邊形稜鏡,該反射光在該角度感測器之反射次數為兩次。 The optical intensity type three-dimensional surface topography and microscopic measuring device according to claim 1, wherein the angle sensor is a parallelogram, and the reflected light has two reflection times at the angle sensor. Times. 如請求項1所述之光學式強度型三維表面形貌與顯微量測裝置,其中,該矩陣式光感測器為電荷耦合器(Charge-Coupled Device,CCD)。 The optical intensity type three-dimensional surface topography and microscopic measuring device according to claim 1, wherein the matrix type photo sensor is a Charge-Coupled Device (CCD). 一種光學式強度型三維表面形貌與顯微量測方法,其包括:提供如請求項1所述之裝置;以光源發射一光束;該光束經該擴束器擴大為平行光束;該平行光束經該偏極板成為P偏振光;該P偏振光光束穿透該第二透鏡與該偏極分光鏡後緊接著經過該 四分之一波片成為圓偏極,並經該第二物鏡而投射至一待測物上;該第二物鏡供來自該待測物之反射光穿越返回該偏極分光鏡,以放大該待測物表面形貌;以該第三透鏡供自該偏極分光鏡返回的該反射光通過;以該角度感測器在全反射與臨界角附近做為微小角度感測;及以該矩陣式光感測器,於全反射以及臨界角附近各拍攝一張光強度變化之灰階圖形,並傳送至該電腦進行處理,該電腦可由所擷取之二維該二灰階圖形測量其面積尺寸大小,該電腦再對該二灰階圖形進行反射率分佈的分析,以求出二次反射過後之反射率,並由其強度變化(或反射率變量)而轉換成高度值,進而形成三維之影像。 An optical intensity type three-dimensional surface topography and microscopic measurement method, comprising: providing the apparatus according to claim 1; emitting a light beam by a light source; the light beam is expanded into a parallel light beam by the beam expander; the parallel light beam Passing the polarizing plate into P-polarized light; the P-polarized light beam passes through the second lens and the polarizing beam splitter and then passes through the The quarter wave plate becomes a circularly polarized pole and is projected onto the object to be tested through the second objective lens; the second objective lens passes the reflected light from the object to be tested to return to the polarizing beam splitter to enlarge the a surface topography of the object to be tested; the reflected light returned by the third lens from the polarizing beam splitter passes; the angle sensor is used as a micro angle sensing near the total reflection and the critical angle; and the matrix is used a light sensor that takes a grayscale pattern of light intensity changes near the total reflection and the critical angle and transmits it to the computer for processing. The computer can measure the area by the two-dimensional two-gray pattern captured. Dimensions, the computer then analyzes the reflectance distribution of the two-gray scale image to obtain the reflectance after the secondary reflection, and converts it into a height value by its intensity change (or reflectance variable) to form a three-dimensional shape. Image. 如請求項7所述之光學式強度型三維表面形貌與顯微量測方法,其中,該矩陣式光感測器擷取該待測物影像,其每點上光強度作為所量測之表面高度的資訊。 The optical intensity type three-dimensional surface topography and microscopic measurement method according to claim 7, wherein the matrix type photo sensor captures the image of the object to be tested, and the light intensity at each point is measured. Surface height information. 如請求項7所述之光學式強度型三維表面形貌與顯微量測方法,其中,該光源與該擴束器之間設一光阻隔器,該光阻隔器供來自光源的光束經過,用以避免系統的反射光返回該光源。 The optical intensity type three-dimensional surface topography and microscopic measurement method according to claim 7, wherein a light blocker is disposed between the light source and the beam expander, and the light blocker passes the light beam from the light source. To avoid the reflected light from the system return to the source. 如請求項7所述之光學式強度型三維表面形貌與顯微量測方法,其中,該角度感測器為一鍍膜的平行四邊形稜鏡,該反射光在該角度感測器之反射次數為兩次。The optical intensity type three-dimensional surface topography and microscopic measurement method according to claim 7, wherein the angle sensor is a coated parallelogram 稜鏡, and the reflected light is reflected by the angle sensor. For two times.
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