CN115996590A - Display panel and display device - Google Patents
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- CN115996590A CN115996590A CN202310070248.4A CN202310070248A CN115996590A CN 115996590 A CN115996590 A CN 115996590A CN 202310070248 A CN202310070248 A CN 202310070248A CN 115996590 A CN115996590 A CN 115996590A
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
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Abstract
The embodiment of the application provides a display panel and display equipment. In the display panel provided by the embodiment of the application, the barrier structure is arranged on one side of the barrier region of the substrate, the second metal substructure in the barrier structure is in orthographic projection of the substrate, and the first metal substructure and the third metal substructure are positioned in orthographic projection of the substrate, namely, the second metal substructure is laterally retracted relative to the first metal substructure, so that the cross section of the barrier structure is I-shaped, the barrier performance of the barrier structure can be improved, and the reliability of the display panel can be improved. The first metal layer and the first structure of the pixel structure positioned in the display area are arranged on the same layer, and the materials of the first metal layer and the first structure are the same, so that the preparation process of the barrier structure can be simplified, the preparation difficulty of the barrier structure can be reduced, and the preparation cost of the display panel can be reduced.
Description
The application is a divisional application of an invention patent application with the application number of 202110729219.5 and the invention name of display panel, a preparation method thereof and display equipment.
Technical Field
The application relates to the technical field of display, in particular to a display panel and display equipment.
Background
With the development of display technology, display products using organic light emitting display panels are becoming popular with users. For the special-shaped organic light-emitting display panel, as the shape of the light-emitting area is different from that of the traditional rectangular light-emitting area, a blocking structure is required to be arranged to block and isolate water vapor of the organic light-emitting layer, the cathode and the like so as to ensure the tightness of the organic light-emitting display panel.
Currently, in the process of manufacturing an organic light emitting display panel, the barrier property of the barrier structure is low, resulting in low yield of the organic light emitting display panel.
Disclosure of Invention
The application provides a display panel and display equipment aiming at the defects of the prior art, which are used for solving the technical problem that the barrier performance of a barrier structure in an organic light-emitting display panel in the prior art is lower.
In a first aspect, embodiments of the present application provide a display panel including a display region and a barrier region, the barrier region surrounding the display region, the display panel including:
a substrate base;
the barrier structure is positioned on one side of the substrate base plate and is positioned in the barrier area; the barrier structure comprises a first structure, wherein the first structure comprises a first metal substructure, a second metal substructure and a third metal substructure which are sequentially stacked along a direction away from the substrate; the second metal substructure is projected on the front side of the substrate, and the second metal substructure and the third metal substructure are positioned in the front side of the substrate;
The pixel structure is positioned on one side of the substrate base plate and is positioned in the display area, the pixel structure comprises a first metal layer which is arranged on the same layer as the first structure, and the material of the first metal layer is the same as that of the first structure.
Optionally, the boundary of the orthographic projection of the second metal substructure on the substrate has a first set distance from the boundary of the orthographic projection of the first metal substructure on the substrate.
Optionally, the orthographic projection of the first metal substructure on the substrate overlaps with the orthographic projection of the third metal substructure on the substrate.
Optionally, the barrier structure further comprises a second structure, the second structure being located on a side of the first structure remote from the substrate,
the second structure comprises a fourth metal substructure, a fifth metal substructure and a sixth metal substructure which are sequentially stacked in a direction away from the substrate; orthographic projection of the fifth metal substructure on the substrate is positioned in orthographic projection of the fourth metal substructure and the sixth metal substructure on the substrate; and the boundary of the orthographic projection of the fifth metal substructure on the substrate has a second set distance from the boundary of the orthographic projection of the fourth metal substructure on the substrate.
Optionally, the orthographic projection of the fifth metal substructure on the substrate is located within the orthographic projection of the second metal substructure on the substrate.
Optionally, the orthographic projection of the sixth metal substructure on the substrate overlaps with the orthographic projection of the fourth metal substructure on the substrate.
Optionally, the pixel structure includes a second metal layer disposed on the same layer as the second structure, and a material of the second metal layer is the same as a material of the second structure.
Optionally, the display panel includes at least one of:
the first metal layer comprises a first metal sub-layer, a second metal sub-layer and a third metal sub-layer which are sequentially stacked along the direction far away from the substrate; the materials of the first metal sub-layer and the third metal sub-layer are the same, and the materials of the second metal sub-layer are different from the materials of the first metal sub-layer and the third metal sub-layer; the thicknesses of the first metal sub-layer and the third metal sub-layer are not less than 300 micrometers and not more than 600 micrometers, and the thickness of the second metal sub-layer is not less than 6000 micrometers and not more than 6500 micrometers;
the second metal layer comprises a fourth metal sub-layer, a fifth metal sub-layer and a sixth metal sub-layer which are sequentially stacked along the direction far away from the substrate; the fourth metal sub-layer and the sixth metal sub-layer are the same material, and the material of the fifth metal sub-layer is different from the material of the fourth metal sub-layer and the sixth metal sub-layer; the thicknesses of the fourth metal sub-layer and the sixth metal sub-layer are not less than 300 micrometers and not more than 600 micrometers, and the thickness of the fifth metal sub-layer is not less than 6000 micrometers and not more than 6500 micrometers.
Optionally, the range of values of the first set distance and the second set distance is not less than 0.3 micrometers and not more than 0.5 micrometers.
Optionally, the barrier region is provided with at least two barrier structures, the distance between any adjacent two barrier structures being no less than 8 microns and no more than 15 microns.
Optionally, the orthographic projection of the fifth metal substructure on the substrate is located within the orthographic projection of the second metal substructure on the substrate.
Optionally, the orthographic projection of the second metal substructure on the substrate overlaps with the orthographic projection of the fifth metal substructure on the substrate.
Optionally, the display panel further includes:
the first passivation structure is arranged on one side of the third metal substructure, which is far away from the substrate; orthographic projection of the first passivation structure on the substrate covers orthographic projection of the third metal substructure on the substrate;
the second passivation structure is arranged on one side of the sixth metal substructure, which is far away from the substrate; the orthographic projection of the second passivation structure on the substrate covers the orthographic projection of the sixth metal substructure on the substrate.
Optionally, the display panel further includes: the organic light-emitting layer is arranged on one side of the second passivation structure far away from the substrate base plate.
In a second aspect, embodiments of the present application provide a display device, including: the display panel provided in the first aspect above.
The beneficial technical effects that technical scheme that this application embodiment provided brought include:
in the display panel provided by the embodiment of the application, the barrier structure is arranged on one side of the barrier region of the substrate, the second metal substructure in the barrier structure is in orthographic projection of the substrate, and the first metal substructure and the third metal substructure are positioned in orthographic projection of the substrate, namely, the second metal substructure is laterally retracted relative to the first metal substructure, so that the cross section of the barrier structure is I-shaped, the barrier performance of the barrier structure can be improved, and the reliability of the display panel can be improved.
In addition, the first metal layer and the first structure of the pixel structure in the display area are arranged on the same layer, and the materials of the first metal layer and the first structure are the same, so that the preparation process of the barrier structure can be simplified, the preparation difficulty of the barrier structure can be reduced, and the preparation cost of the display panel can be reduced.
Additional aspects and advantages of the application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application.
Drawings
The foregoing and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings, in which:
fig. 1 is a schematic flow chart of a method for manufacturing a display panel according to an embodiment of the present application;
fig. 2 is a schematic flow chart of another method for manufacturing a display panel according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram of a structure after a photoresist structure is formed on a side of the second passivation layer away from the substrate;
FIG. 4 is a schematic view of a structure in which a blocking portion is formed at an end of a second metal structure and a first metal structure;
FIG. 5 is a schematic diagram of the structure after stripping the barrier and photoresist structures;
FIG. 6 is a schematic diagram of the structure after etching the second metal structure and the first metal structure to obtain a barrier structure;
FIG. 7 is a schematic top view of the structure of FIG. 6 according to an embodiment of the present disclosure;
FIG. 8 is a schematic diagram of the structure after etching the second metal structure and the first metal structure to obtain another barrier structure;
FIG. 9 is a schematic diagram of a pixel defining structure and an organic light emitting layer after stripping a photoresist layer on a side of a substrate located in a display region;
fig. 10 is a schematic structural diagram of a display panel according to an embodiment of the present disclosure;
Fig. 11 is a schematic structural diagram of another display panel according to an embodiment of the present disclosure;
fig. 12 is a schematic structural diagram of another display panel according to an embodiment of the present application.
Reference numerals illustrate:
10-a substrate base;
20-barrier structure; a first structure of a 21-barrier structure; 211-a first metal substructure; 212-a second metal substructure; 213-a third metal substructure; 22-a second structure of barrier structure 20; 221-fourth metal substructure; 222-a fifth metal substructure; 223-sixth metal substructure;
30-a first passivation structure;
40-a second passivation structure;
60-blocking part;
101-a buffer layer;
102-a first gate insulation layer;
103-a second gate insulation layer;
104-an active layer;
105-a first gate layer;
106-an interlayer insulating layer;
107-a first metal layer; 1071-a first metal structure;
108-a first planarization layer;
109-a first passivation layer;
110-a second metal layer; 1101-second metal structure;
111-a second passivation layer;
112-a second planarization layer;
113-an anode layer;
114-a photoresist layer; 1141-a photoresist structure;
115-a second gate layer;
116-pixel definition structure;
117-an organic light emitting layer;
201-a display area; 202-barrier region.
Detailed Description
Examples of embodiments of the present application are illustrated in the accompanying drawings, in which like or similar reference numerals refer to like or similar elements or elements having like or similar functionality throughout. Further, if detailed description of the known technology is not necessary for the illustrated features of the present application, it will be omitted. The embodiments described below by referring to the drawings are exemplary only for the purpose of illustrating the present application and are not to be construed as limiting the present application.
It will be understood by those skilled in the art that all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs unless defined otherwise. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless expressly stated otherwise, as understood by those skilled in the art. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. It will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The term "and/or" as used herein includes all or any element and all combination of one or more of the associated listed items.
The inventor of the application researches and discovers that for the special-shaped organic light-emitting display panel, as the shape of the light-emitting area is different from that of the traditional rectangular light-emitting area, a blocking structure is required to be arranged to block and isolate water vapor of the organic light-emitting layer, the cathode and the like so as to ensure the tightness of the organic light-emitting display panel. At present, the cross section of the barrier structure is mostly I-shaped, and in the preparation process of the organic light-emitting display panel, the I-shaped barrier structure is formed by utilizing the difference of etching rates of different metal materials on etching liquid through an etching process. However, in the preparation process of the barrier structure, two side products such as a barrier part are easy to generate, so that etching liquid is difficult to directly contact with the metal material of the barrier structure, the formation rate of the I-shaped barrier structure is low, and the yield of the organic light-emitting display panel is low.
In addition, the side of the existing I-shaped blocking structure far away from the substrate is usually a single-layer metal structure, and in the subsequent preparation process of the organic light-emitting display panel, the single-layer metal structure is easy to break, collapse and the like, so that the I-shaped blocking structure loses blocking effect, and the formation rate of the I-shaped blocking structure is further reduced.
The application provides a display panel, a preparation method thereof and display equipment, and aims to solve the technical problems in the prior art.
The following describes the technical solutions of the present application and how the technical solutions of the present application solve the above technical problems in detail with specific embodiments.
The embodiment of the application provides a preparation method of a display panel, wherein a flow chart of the preparation method is shown in fig. 1, and the preparation method comprises steps S101-S105:
s101, sequentially preparing a first metal layer 107 and a first passivation layer 109 on a side of the substrate 10 located in the blocking area 202.
S102, preparing a photoresist structure 1141 on one side of the first passivation layer 109 away from the substrate 10;
s103, patterning the first passivation layer 109 and the first metal layer 107 based on the photoresist structure 1141, to obtain a first passivation structure and a first metal structure, where a blocking portion is formed at an end of the first metal structure.
S104, the lift-off barrier 60 and the photoresist structure 1141.
S105, etching the first metal structure to obtain a first structure 21 of the barrier structure 20, so that orthographic projections of the second metal substructure 212 in the first structure 21 on the substrate 10 are located in orthographic projections of the first metal substructure 211 and the third metal substructure 213 in the substrate 10; the first metal substructure 211, the second metal substructure 212, and the third metal substructure 213 are stacked.
In the method for manufacturing the display panel provided in the embodiment of the present application, after the first passivation layer 109 and the first metal layer 107 are patterned based on the photoresist structure 1141 to obtain the first passivation structure 30 and the first metal structure 1071, the blocking portion 60 formed at the end portion of the first metal structure 1071 is stripped in time, so that the influence of the blocking portion 60 on the subsequent etching process of the first metal structure 1071 can be avoided, the orthographic projection of the second metal substructure 212 in the first structure 21 on the substrate 10 is ensured, and the first metal substructure 211 and the third metal substructure 213 are positioned in the orthographic projection of the substrate 10, so that the formation rate of the first structure 21 can be ensured, the formation rate of the blocking structure 20 can be ensured, and the yield of the organic light emitting display panel can be ensured.
Moreover, since the first passivation layer 109 is prepared on the side of the first metal layer 107 away from the substrate 10, the first passivation structure 30 is formed on the side of the third metal substructure 213 of the formed first structure 21 away from the substrate 10, and the first passivation structure 30 can enhance the rigidity of the third metal substructure 213, so that the probability of occurrence of problems such as breakage and collapse of the third metal substructure 213 can be reduced, the reliability of the barrier structure 20 can be ensured, and the formation rate of the barrier structure 20 can be ensured.
In one embodiment of the present application, the step S105 specifically includes: the first metal sub-layer, the second metal sub-layer and the third metal sub-layer of the first metal structure are etched to form a first metal sub-structure 211, a second metal sub-structure 212 and a third metal sub-structure 213 of the first structure 21 until a boundary of the orthographic projection of the second metal sub-structure 212 on the substrate 10 has a first set distance d1 from a boundary of the orthographic projection of the first metal sub-structure 211 and the third metal sub-structure 213 on the substrate 10.
In this embodiment of the present application, by defining the boundary of the orthographic projection of the second metal substructure 212 on the substrate 10, the boundary of the orthographic projection of the first metal substructure 211 and the third metal substructure 213 on the substrate 10 has a first set distance d1, so that the barrier structure prepared meets the requirements, so as to ensure the performance of the barrier structure, further ensure the formation rate of the barrier structure, and ensure the yield of the organic light emitting display panel.
It should be noted that, as shown in fig. 10 and 11, the first set distance d1 refers to a distance between a boundary of the orthographic projection of the second metal substructure 212 on the substrate 10 and a boundary of the orthographic projections of the first metal substructure 211 and the third metal substructure 213 on the substrate 10 along the direction in which the display region 201 points to the barrier region 202.
The embodiment of the application provides another preparation method of a display panel, and a flow chart of the preparation method is shown in fig. 2, and the preparation method comprises steps S201-S205:
s201, sequentially preparing the first metal layer 107 and the first passivation layer 109 on the side of the substrate 10 located in the blocking area 202.
In some possible embodiments, the first metal layer 107 and the first passivation layer 109 are sequentially prepared on the side of the substrate base 10 located at the barrier region 202. Optionally, the first metal layer 107 includes at least three metal sub-layers stacked, and the metal sub-layers are made of different metal materials, and in the subsequent preparation process, the i-shaped barrier structure 20 is formed by using the difference of etching rates of the different metal materials on the etching solution. Optionally, in this embodiment, the first metal layer 107 includes three metal sublayers that are stacked, and an etching rate of the metal sublayers that are sandwiched between the upper and lower metal sublayers is greater than an etching rate of the upper and lower metal sublayers. Optionally, the upper and lower metal sublayers are made of Ti (titanium), and the metal sublayers sandwiched between the upper and lower metal sublayers are made of Al (aluminum).
In some possible embodiments, the first metal layer 107 and the first passivation layer 109 may be prepared simultaneously with the relevant film layers of the pixel structure located in the display region 201. Thus, the preparation process of the barrier structure 20 can be simplified, the preparation difficulty of the barrier structure 20 can be reduced, and the preparation cost of the barrier structure 20 can be reduced, thereby reducing the preparation cost of the display panel. Alternatively, in the embodiment of the present application, the first metal layer 107 located in the blocking area 202 and the first metal layer 107 located in the display area 201 are prepared simultaneously, and the first passivation layer 109 located in the blocking area 202 and the first passivation layer 109 located in the display area 201 are prepared simultaneously.
Optionally, before the first metal layer 107 and the first passivation layer 109 are sequentially prepared on the side of the substrate 10 located on the barrier region 202, the method further includes: an interlayer insulating layer 106 is prepared on the side of the substrate 10 located at the barrier region 202, and an interlayer insulating layer 106 located at the barrier region 202 and an interlayer insulating layer 106 located at the display region 201 are prepared at the same time. Then, a first metal layer 107 and a first passivation layer 109 are sequentially prepared on the side of the interlayer insulating layer 106 remote from the base substrate 10.
S202, sequentially preparing the second metal layer 110 and the second passivation layer 111 on the side of the first passivation layer 109 away from the substrate 10.
In some possible embodiments, the second metal layer 110 and the second passivation layer 111 are sequentially prepared on a side of the first passivation layer 109 remote from the substrate base plate 10. Optionally, the second metal layer 110 includes at least three metal sub-layers stacked, and the metal sub-layers are made of different metal materials, and in the subsequent preparation process, the i-shaped barrier structure 20 is formed by using the difference of etching rates of the different metal materials on the etching solution. Optionally, in the embodiment of the present application, the second metal layer 110 includes three metal sublayers that are stacked, and the etching rate of the metal sublayers that are sandwiched between the upper and lower metal sublayers is greater than the etching rate of the upper and lower metal sublayers. Optionally, the upper and lower metal sublayers are made of Ti (titanium), and the metal sublayers sandwiched between the upper and lower metal sublayers are made of Al (aluminum).
In some possible embodiments, the second metal layer 110 and the second passivation layer 111 may be prepared simultaneously with the relevant film layers of the pixel structure located in the display region 201. Thus, the preparation process of the barrier structure 20 can be further simplified, the preparation difficulty of the barrier structure 20 can be further reduced, and the preparation cost of the barrier structure 20 can be further reduced, so that the preparation cost of the display panel can be further reduced. Alternatively, in the embodiment of the present application, the second metal layer 110 located in the blocking area 202 and the second metal layer 110 located in the display area 201 are simultaneously prepared, and the second passivation layer 111 located in the blocking area 202 and the second passivation layer 111 located in the display area 201 are simultaneously prepared.
S203, preparing a photoresist structure 1141 on a side of the second passivation layer 111 away from the substrate 10.
In some possible embodiments, a photoresist structure 1141 is prepared on a side of the portion of the second passivation layer 111 located away from the substrate 10 in the blocking region 202, as shown in fig. 3. Alternatively, the photoresist layer 114 used to fabricate the photoresist structure 1141 may be fabricated simultaneously with the photoresist layer 114 of the pixel structure located in the display region 201. In this embodiment, two photoresist structures 1141 are formed on the side of the second passivation layer 111 away from the substrate 10.
It should be noted that, as shown in fig. 3, the area for preparing the pixel structure is a display area 201, and the area for preparing the barrier structure 20 is a barrier area 202.
S204, patterning the second passivation layer 111, the second metal layer 110, the first passivation layer 109 and the first metal layer 107 based on the photoresist structure 1141, to obtain the second passivation structure 40, the second metal structure 1101, the first passivation structure 30 and the first metal structure 1071, where the end portions of the second metal structure 1101 and the first metal structure 1071 are formed with the blocking portion 60.
In some possible embodiments, the second passivation layer 111, the second metal layer 110, the first passivation layer 109, and the first metal layer 107 are patterned based on the two photoresist structures 1141, resulting in two second passivation structures 40, two second metal structures 1101, two first passivation structures 30, and two first metal structures 1071, and the ends of both the two second metal structures 1101 and the two first metal structures 1071 are formed with the barrier 60, as shown in fig. 4.
Optionally, dry etching the second passivation layer 111 using a combined atmosphere of CF4 (carbon tetrafluoride) and O2 (oxygen) based on the two photoresist structures 1141, such that the second passivation layer 111 forms the second passivation structure 40 after patterning; the second metal layer 110 is dry etched using a combined atmosphere of BCl3 (boron trichloride) and Cl2 (chlorine gas) continuously, such that the second metal layer 110 is patterned to form a second metal structure 1101, and during the dry etching, barrier portions 60 are formed at both end portions of the second metal structure 1101. Dry etching the first passivation layer 109 using a combined atmosphere of CF4 (carbon tetrafluoride) and O2 (oxygen) such that the first passivation layer 109 is patterned to form a first passivation structure 30; the first metal layer 107 is dry etched using a combined atmosphere of BCl3 (boron trichloride) and Cl2 (chlorine gas) continuously, so that the first metal structure 1071 is formed after the first metal layer 107 is patterned, and the barrier portions 60 are formed at both end portions of the first metal structure 1071 during the dry etching.
It should be noted that, in the process of manufacturing the display panel, since the first metal layer 107 located in the barrier region 202 and the first metal layer 107 located in the display region 201 are manufactured at the same time, and the patterning process is performed on the first metal layer 107 located in the display region 201, the patterning process may be performed on the first metal layer 107 located in the display region 201, and at the same time, the patterning process may be performed on the first metal layer 107 located in the barrier region 202, so that the process step of patterning the first metal layer 107 based on the photoresist structure 1141 in step S204 may be omitted. The preparation process of the barrier structure 20 can be further simplified, the preparation difficulty of the barrier structure 20 can be further reduced, and the preparation cost of the barrier structure 20 can be further reduced, so that the preparation cost of the display panel can be further reduced.
Optionally, the thickness of the photoresist structure 1141 is not less than 1.5 μm and not more than 1.8 μm
S205, the lift-off barrier 60 and the photoresist structure 1141.
In some possible embodiments, the blocking portions 60 at both ends of the second metal structure 1101, the blocking portions 60 at both ends of the first metal structure 1071, and the photoresist structure 1141 at the side of the second passivation layer 111 remote from the substrate 10 are stripped using a wet stripping process, resulting in the structure shown in fig. 5.
S206, etching the first metal structure 1071 and the second metal structure 1101 to obtain a first structure 21 and a second structure 22 of the barrier structure 20 respectively, so that orthographic projections of the fifth metal substructure 222 in the second structure 22 and the fifth metal substructure 222 in the substrate 10 are located in orthographic projections of the fourth metal substructure 221 and the sixth metal substructure 223 in the substrate 10; and such that the orthographic projection of the second metal substructure 212 in the first structure 21 onto the substrate 10 is located within the orthographic projection of the first metal substructure 211 and the third metal substructure 213 onto the substrate 10.
Optionally, the fourth metal substructure 221, the fifth metal substructure 222, and the sixth metal substructure 223 are stacked. Optionally, the first metal substructure 211, the second metal substructure 212, and the third metal substructure 213 are arranged in a stack.
In some possible embodiments, the structure shown in fig. 5 is etched with an etching solution, and due to the difference in etching rate of the etching solution by the metal materials of the layers in the second metal structure 1101, the orthographic projection of the fifth metal substructure 222 on the substrate 10 in the second structure 22 is located in the orthographic projections of the fourth metal substructure 221 and the sixth metal substructure 223 on the substrate 10, that is, the end portions of the fifth metal substructure 222 are retracted relative to the fourth metal substructure 221 and the sixth metal substructure 223.
Similarly, the front projection of the second metal substructure 212 on the substrate 10 in the first structure 21 is made to lie within the front projection of the first metal substructure 211 and the third metal substructure 213 on the substrate 10, i.e. the ends of the second metal substructure 212 are both retracted with respect to the first metal substructure 211 and the third metal substructure 213, as shown in fig. 6.
In the embodiment of the application, the etching solution comprises CH3COOH, HNO3 and H3PO4, wherein the content of CH3COOH is not less than 10% and not more than 20%; the HNO3 content is not less than 1% and not more than 2.5%; the content of H3PO4 is not less than 50% and not more than 60%.
Optionally, the barrier region 202 of the display panel in fig. 6 is provided with two barrier structures 20, and each barrier structure 20 includes two i-shaped structures stacked up and down, so that the barrier structure 20 is a dual i-shaped structure, thereby improving the barrier performance of the barrier structure 20 and the reliability of the display panel.
Alternatively, as shown in fig. 7, the display panel includes a display region 201 and a barrier region 202 surrounding the display region 201, and two barrier structures 20 are provided in the barrier region 202. It should be noted that, in the embodiment of the present application, the front projection of the second metal substructure 212 on the substrate 10 overlaps with the front projection of the fifth metal substructure 222 on the substrate 10, so only two dashed lines are used to represent the second metal substructure 212 and the fifth metal substructure 222 in fig. 7.
In this embodiment of the present application, since the first passivation layer 109 is prepared on the side of the first metal layer 107 away from the substrate 10, the first passivation structure 30 is formed on the side of the third metal substructure 213 of the formed first structure 21 away from the substrate 10, where the first passivation structure 30 can enhance the rigidity of the third metal substructure 213, so as to reduce the probability of occurrence of fracture, collapse and other problems of the third metal substructure 213; similarly, a second passivation structure 40 is formed on one side, far away from the substrate 10, of the sixth metal substructure 223 in the second structure 22, and the second passivation structure 40 can enhance the rigidity of the sixth metal substructure 223, so that the probability of occurrence of problems such as breakage and collapse of the sixth metal substructure 223 can be reduced, the reliability of the barrier structure 20 can be ensured, and the formation rate of the barrier structure 20 can be ensured.
In one embodiment of the present application, the etching of the second metal structure 1101 results in the second structure 22 of the barrier structure 20, such that the orthographic projection of the fifth metal substructure 222 in the second structure 22 on the substrate 10 is located within the orthographic projections of the fourth metal substructure 221 and the sixth metal substructure 223 on the substrate 10; the fourth metal substructure 221, the fifth metal substructure 222, and the sixth metal substructure 223 are stacked together, comprising:
The fourth metal sub-layer, the fifth metal sub-layer and the sixth metal sub-layer of the second metal structure 1101 are etched to form a fourth metal sub-structure 221, a fifth metal sub-structure 222 and a sixth metal sub-structure 223 of the second structure 22 until a boundary of the orthographic projection of the fifth metal sub-structure 222 on the substrate 10 has a second set distance d2 from a boundary of the orthographic projection of the fourth metal sub-structure 221 and the sixth metal sub-structure 223 on the substrate 10.
In this embodiment of the present application, by defining the boundary of the orthographic projection of the fifth metal substructure 222 on the substrate 10, the boundary of the orthographic projection of the fourth metal substructure 221 and the sixth metal substructure 223 on the substrate 10 has the second set distance d2, so that the barrier structure 20 prepared to meet the requirements is ensured, so that the performance of the barrier structure 20 is ensured, the formation rate of the barrier structure 20 is further ensured, and the yield of the organic light emitting display panel is ensured.
In this embodiment, as shown in fig. 11, the second set distance d2 refers to a distance between a boundary of the orthographic projection of the fifth metal substructure 222 on the substrate 10 and a boundary of the orthographic projection of the fourth metal substructure 221 and the sixth metal substructure 223 on the substrate 10 along the direction in which the display region 201 points to the barrier region 202.
It should be noted that, in the direction perpendicular to the substrate 10, since the heights of the first metal structure 1071 and the second metal structure 1101 are different, during wet etching, the flow rate of the etching liquid contacting the second metal structure 1101 located above the first metal structure 1071 is faster during the etching liquid flows from top to bottom, and thus the etching degree of the second metal structure 1101 is greater than that of the first metal structure 1071. So that the second set distance d2 in the second structure 22 is formed to be greater than the first set distance d1 in the first structure 21, as shown in fig. 8.
In one embodiment of the present application, the preparing the photoresist structure 1141 on the side of the first passivation layer 109 away from the substrate 10 includes:
preparing a photoresist layer 114 on a side of the first passivation layer 109 away from the substrate 10, such that the photoresist layer 114 covers the quasi-pixel structure of the substrate 10 on the side of the display region 201; the photoresist layer 114 is patterned such that a portion of the photoresist layer 114 located in the blocking region 202 forms a photoresist structure 1141.
Optionally, a photoresist layer 114 is prepared on a side of the second passivation layer 111 away from the substrate 10, such that the photoresist layer 114 covers the quasi-pixel structure of the substrate 10 on the side of the display region 201, specifically, such that the photoresist layer 114 covers the anode layer 113 of the quasi-pixel structure, the second passivation layer 111 and the end portions of each film layer of the quasi-pixel structure, thereby avoiding the influence of the preparation process of the barrier structure 20 on the quasi-pixel structure; the photoresist layer 114 is patterned such that a portion of the photoresist layer 114 located in the blocking region 202 forms a photoresist structure 1141.
In some possible embodiments, as shown in fig. 3 to 9, the quasi-pixel structure of the substrate 10 on one side of the display area 201 includes: an active layer 104, a first gate layer 105, an interlayer insulating layer 106, a first metal layer 107, a first planarization layer 108, a first passivation layer 109, a second metal layer 110, a second passivation layer 111, a second planarization layer 112, an anode layer 113, a photoresist layer 114, and a second gate layer 115 on a side of the second gate insulating layer 103 remote from the substrate 10. A buffer layer 101, a first gate insulating layer 102, and a second gate insulating layer 103 are further provided on one side of the substrate 10.
Optionally, a quasi-pixel structure located on one side of the display area 201 is used to form a pixel structure in a subsequent display panel.
In some possible embodiments, the preparation process of the quasi-pixel structure of the substrate 10 on one side of the display area 201 includes:
depositing a preparation buffer layer 101 on one side of the substrate 10, wherein the preparation material of the buffer layer 101 comprises silicon nitride, silicon oxide and the like, and the thickness of the silicon nitride is not less than 0.3 micron and not more than 0.7 micron; the thickness of the silicon oxide is not less than 1 micron and not more than 1.2 microns. Depositing and preparing an active layer 104 on one side of the buffer layer 101, which is positioned in the display area 201, wherein the active layer 104 is prepared from amorphous silicon, the thickness of the active layer 104 is 0.05 micrometer, and carrying out dehydrogenization treatment on the active layer 104, wherein the temperature of the dehydrogenization treatment is not less than 300 ℃ and not more than 350 ℃; then ELA (Excimer Laser Annealing ) treatment is performed on the active layer 104 so that part of amorphous silicon in the active layer 104 is converted into polysilicon; then, dry etching the active layer 104, specifically, using a combined atmosphere of CF4 (carbon tetrafluoride) and O2 (oxygen), dry etching the active layer 104, then, performing wet stripping to complete patterning of the active layer 104, forming a non-capacitive region mask, performing ion implantation to dope the polysilicon in the capacitive region to be conductive, and doping can use phosphane or borane.
Depositing and preparing a first gate insulating layer 102 on one side of the patterned active layer 104, wherein the manufacturing materials of the first gate insulating layer 102 comprise silicon nitride and silicon oxide, and the thickness of the silicon nitride is not less than 0.05 micron and not more than 0.09 micron; the thickness of the silicon oxide is not less than 0.03 micrometers and not more than 0.06 micrometers.
Depositing and preparing a gate metal layer on one side of the first gate insulating layer 102, then patterning the gate metal layer, and specifically, dry etching the gate metal layer by using a combined atmosphere of SF6 (sulfur hexafluoride) and O2 (oxygen) to complete the patterning of the gate metal layer; alternatively, a combined atmosphere of CF4 (carbon tetrafluoride) at a high flow rate and O2 (oxygen) at a low flow rate is used, alternatively, the flow rate of CF4 is 2000 to 2500sccm (Standard Cubic Centimeter per Minute, standard milliliters per minute) and the flow rate of O2 (oxygen) is 1000 to 1500sccm, and both the flow rates of CF4 and O2 include the end values of the respective value ranges. Patterning of the gate metal layer is completed such that the first gate layer 105 is deposited on the side of the display region 201, the first gate layer 105 is made of a material including molybdenum metal, and the thickness of the first gate layer 105 is not less than 0.25 micrometers and not more than 0.3 micrometers.
A second gate insulating layer 103 is deposited on one side of the first gate layer 105, and then a second gate layer 115 is formed on one side of the second gate insulating layer 103 using the same manufacturing process as that of the first gate layer 105.
Depositing an interlayer insulating layer 106 on one side of the second gate layer 115, optionally, the interlayer insulating layer 106 is made of silicon nitride and silicon oxide, wherein the thickness of the silicon nitride is not less than 0.2 micrometers and not more than 0.3 micrometers; the thickness of the silicon oxide is not less than 0.2 microns and not more than 0.5 microns. Then, a via is formed by a photolithography process, so that at least a portion of the active layer 104 is exposed, specifically, a combined atmosphere of CF4 (carbon tetrafluoride) and O2 (oxygen) may be used to dry etch the inter-insulating layer 106, the second gate insulating layer 103 and the first gate insulating layer 102, so that at least a portion of the active layer 104 is exposed.
A first metal layer 107 is deposited on one side of the interlayer insulating layer 106, in this embodiment, the first metal layer 107 is a Ti (titanium)/Al (aluminum)/Ti (titanium) film structure, and the thickness of Ti (titanium) is not less than 300 micrometers and not more than 600 micrometers; the thickness of Al (aluminum) is not less than 6000 microns and not more than 6500 microns. Optionally, the first metal layer 107 is dry etched using a combined atmosphere of BCl3 (boron trichloride) and Cl2 (chlorine gas) to achieve patterning of the first metal layer 107.
And preparing a first planarization layer 108 on one side of the first metal layer 107 by adopting the processes of coating, exposing, developing, post-baking and the like, wherein the thickness of the first planarization layer 108 is not less than 1.5 micrometers and not more than 2 micrometers. Then, a via hole is formed in a portion of the first planarization layer 108 corresponding to the source region of the active layer 104. A first passivation layer 109 is deposited and prepared on one side of the first planarization layer 108, the material for manufacturing the first passivation layer 109 includes silicon nitride, and then dry etching is performed to form a via hole in a region of the first passivation layer 109 corresponding to the via hole of the first planarization layer 108.
Depositing and preparing a second metal layer 110 on one side of the interlayer insulating layer 106, wherein in the embodiment of the present application, the second metal layer 110 is a Ti (titanium)/Al (aluminum)/Ti (titanium) film structure, and the thickness of Ti (titanium) is not less than 300 micrometers and not more than 600 micrometers; the thickness of Al (aluminum) is not less than 6000 microns and not more than 6500 microns. Optionally, the second metal layer 110 is dry etched using a combined atmosphere of BCl3 (boron trichloride) and Cl2 (chlorine gas) to achieve patterning of the second metal layer 110.
A second passivation layer 111 is prepared on one side of the second metal layer 110, and the second passivation layer 111 is made of silicon nitride. And preparing a second planarization layer 112 on one side of the second passivation layer 111 by adopting processes of coating, exposing, developing, post-baking and the like, wherein the thickness of the second planarization layer 112 is not less than 1.5 micrometers and not more than 2 micrometers. Then, a via hole is formed in a portion of the second planarization layer 112 corresponding to the source region of the active layer 104.
An anode layer 113 is prepared on one side of the second planarization layer 112 such that at least a portion of the anode layer 113 is connected to the first metal layer 107 through a via. Then, a photoresist layer 114 is prepared on one side of the anode layer 113, such that the photoresist layer 114 covers the anode layer 113, the second passivation layer 111 and the end portions of each film layer of the quasi-pixel structure, thereby avoiding the influence of the preparation process of the barrier structure 20 on the pixel structure
After the preparation of the barrier structure 20 located in the barrier region 202 is completed, the photoresist layer 114 located in the display region 201 is stripped, and then the pixel defining structure 116 is prepared on one side of the anode layer 113 using a coating, exposing, developing, post-baking, etc. process. An organic light emitting layer 117 is prepared by deposition on one side of the pixel defining structure 116, as shown in fig. 9, such that the organic light emitting layer 117 is blocked due to the blocking of the blocking structure 20. In the present embodiment, the thickness of the pixel defining structure 116 is not less than 1.4 microns and not more than 1.8 microns.
Based on the same inventive concept, the embodiment of the present application provides a display panel including a display region 201 and a barrier region 202, the barrier region 202 surrounding the display region 201. The display panel has a structure schematically shown in fig. 10, and includes: a substrate base 10, a barrier structure 20 and a first passivation structure 30.
A barrier structure 20 located on one side of the substrate 1 and located in the barrier region 202; the barrier structure 20 comprises a first structure 21, wherein the first structure 21 comprises a first metal substructure 211, a second metal substructure 212 and a third metal substructure 213 which are sequentially stacked along a direction away from the substrate 10, the second metal substructure 212 is in orthographic projection on the substrate 10, and the first metal substructure 211 and the third metal substructure 213 are in orthographic projection on the substrate 10; the first passivation structure 30 is located on a side of the barrier structure 20 remote from the substrate base plate 10.
In the embodiment of the application, the display panel includes a display area 201 and a barrier area 202 adjacent to the display area 201. As shown in fig. 7, the barrier region 202 is provided with one barrier structure 20, and the barrier structure 20 includes a first metal substructure 211, a second metal substructure 212, and a third metal substructure 213 that are stacked, and the barrier structure 20 has an i-shaped cross-section in a cross-sectional direction perpendicular to the display panel.
In this embodiment, the cross-sectional shape of the barrier structure 20 is configured in an i-shape, so that the barrier performance of the barrier structure 20 can be improved, and the reliability of the display panel can be improved.
In one embodiment of the present application, the boundary of the orthographic projection of the second metal substructure 212 on the substrate 10 has a first set distance d1 from the boundary of the orthographic projection of the first metal substructure 211 on the substrate 10. The prepared barrier structure meets the requirements to ensure the performance of the barrier structure, so that the formation rate of the barrier structure can be further ensured, and the yield of the organic light-emitting display panel can be ensured.
Optionally, the orthographic projection of the first passivation structure 30 on the substrate base plate 10 covers the orthographic projection of the third metal substructure 213 on the substrate base plate 10. Thereby ensuring that the first passivation structure 30 can completely cover the third metal substructure 213 to enhance the rigidity of the third metal substructure 213, so as to reduce the probability of fracture, collapse and other problems of the third metal substructure 213, thereby ensuring the reliability of the barrier structure 20 and the formation rate of the barrier structure 20.
In one embodiment of the present application, the orthographic projection of the first metal substructure 211 on the substrate base plate 10 overlaps with the orthographic projection of the third metal substructure 213 on the substrate base plate 10. That is, the boundary of the orthographic projection of the second metal substructure 212 on the substrate 10 and the boundary of the orthographic projection of the third metal substructure 213 on the substrate 10 have a first set distance d1.
In one embodiment of the present application, as shown in fig. 11, the barrier structure 20 further includes a second structure 22, the second structure 22 is located on a side of the first structure 21 away from the substrate 10, and the second passivation structure 40 is located on a side of the second structure 22 away from the substrate 10, where the second passivation structure 40 is located; the second structure 22 includes a fourth metal substructure 221, a fifth metal substructure 222, and a sixth metal substructure 223 that are stacked in order in a direction away from the substrate 10, where the fifth metal substructure 222 is in front projection of the substrate 10, and is located within the front projection of the fourth metal substructure 221 on the substrate 10.
Optionally, the fifth metal substructure 222 has a second set distance d2 at the boundary of the orthographic projection of the substrate 10 from the boundary of the orthographic projection of the fourth metal substructure 221 at the substrate 10. The prepared barrier structure meets the requirements to ensure the performance of the barrier structure, so that the formation rate of the barrier structure can be further ensured, and the yield of the organic light-emitting display panel can be ensured.
Optionally, the orthographic projection of the sixth metal substructure 223 on the substrate base plate 10 overlaps with the orthographic projection of the fourth metal substructure 221 on the substrate base plate 10. That is, the boundary of the orthographic projection of the fifth metal substructure 222 on the substrate 10 and the boundary of the orthographic projection of the sixth metal substructure 223 on the substrate 10 have a second set distance d2.
Optionally, the orthographic projection of the second passivation structure 40 on the substrate base plate 10 covers the orthographic projection of the sixth metal substructure 223 on the substrate base plate 10. Thereby ensuring that the second passivation structure 40 can completely cover the sixth metal substructure 223 to enhance the rigidity of the sixth metal substructure 223, so as to reduce the probability of fracture, collapse and other problems of the sixth metal substructure 223, thereby ensuring the reliability of the barrier structure 20 and the formation rate of the barrier structure 20.
In one embodiment of the present application, fifth metal substructure 222 is in front projection of substrate 10 within front projection of second metal substructure 212 on substrate 10.
In one embodiment of the present application, an organic light emitting layer 117 is disposed on a side of the second passivation structure 40 remote from the substrate base plate 10. As previously known, when the organic light emitting layer 117 is deposited on one side of the pixel defining structure 116, the organic light emitting layer 117 is also formed on the side of the barrier structure 20, which is far from the substrate 10, of the second passivation structure 40 located in the barrier region 202, and the portion of the organic light emitting layer 117 located in the display region 201 and the portion located in the barrier region 202 are blocked due to the barrier of the barrier structure 20, as shown in fig. 9. The portion of the organic light emitting layer 117 located in the display region 201 is in contact with the anode layer 113, and the portion of the organic light emitting layer 117 can normally emit light during operation of the display panel.
It should be noted that, in the embodiment of the present application, by disposing the organic light emitting layer 117 on the side of the second passivation structure 40 away from the substrate 10, the organic light emitting layer 117 located in the display region 201 and the organic light emitting layer 117 located in the barrier region 202 are formed simultaneously in the manufacturing process of the display panel, so that the use of masks can be avoided in the process of forming the organic light emitting layer 117, and thus the manufacturing cost of the display panel can be reduced.
In one embodiment of the present application, the first set distance d1 and the second set distance d2 are both in the range of 0.3-0.5 micrometers. It should be noted that, the values of the first set distance d1 and the second set distance d2 each include the end values of 0.3 micrometers and 0.5 micrometers.
In one embodiment of the present application, the barrier region 202 may be provided with a plurality of barrier structures 20, and the distance d3 between two adjacent barrier structures 20 is 8-15 microns. It should be noted that the distance d3 between two adjacent barrier structures 20 has a value including 8 microns and 15 microns. Alternatively, as shown in fig. 12, the barrier region 202 may be provided with two barrier structures 20.
It should be noted that, as shown in fig. 12, the distance d3 refers to a distance between two adjacent barrier structures 20 in a direction in which the display area 201 points to the barrier area 202.
Based on the same inventive concept, an embodiment of the present application provides a display apparatus including: the display panel provided in the above embodiments may alternatively include: the display panel is prepared by adopting the preparation method of the display panel provided by each embodiment.
By applying the embodiment of the application, at least the following beneficial effects can be realized:
in the method for manufacturing the display panel provided in the embodiment of the present application, after the first passivation layer 109 and the first metal layer 107 are patterned based on the photoresist structure 1141 to obtain the first passivation structure 30 and the first metal structure 1071, the blocking portion 60 formed at the end portion of the first metal structure 1071 is stripped in time, so that the influence of the blocking portion 60 on the subsequent etching process of the first metal structure 1071 can be avoided, the orthographic projection of the second metal substructure 212 in the first structure 21 on the substrate 10 is ensured, and the first metal substructure 211 and the third metal substructure 213 are positioned in the orthographic projection of the substrate 10, so that the formation rate of the first structure 21 can be ensured, the formation rate of the blocking structure 20 can be ensured, and the yield of the organic light emitting display panel can be ensured.
Moreover, since the first passivation layer 109 is prepared on the side of the first metal layer 107 away from the substrate 10, the first passivation structure 30 is formed on the side of the third metal substructure 213 of the formed first structure 21 away from the substrate 10, and the first passivation structure 30 can enhance the rigidity of the third metal substructure 213, so that the probability of occurrence of problems such as breakage and collapse of the third metal substructure 213 can be reduced, the reliability of the barrier structure 20 can be ensured, and the formation rate of the barrier structure 20 can be ensured.
Those of skill in the art will appreciate that the various operations, methods, steps in the flow, actions, schemes, and alternatives discussed in the present application may be alternated, altered, combined, or eliminated. Further, other steps, means, or steps in a process having various operations, methods, or procedures discussed in this application may be alternated, altered, rearranged, split, combined, or eliminated. Further, steps, measures, schemes in the prior art with various operations, methods, flows disclosed in the present application may also be alternated, altered, rearranged, decomposed, combined, or deleted.
In the description of the present application, it should be understood that the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate description of the present application and simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present application.
The terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, unless otherwise indicated, the meaning of "a plurality" is two or more.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.
In the description of the present specification, a particular feature, structure, material, or characteristic may be combined in any suitable manner in one or more embodiments or examples.
It should be understood that, although the steps in the flowcharts of the figures are shown in order as indicated by the arrows, these steps are not necessarily performed in order as indicated by the arrows. The steps are not strictly limited in order and may be performed in other orders, unless explicitly stated herein. Moreover, at least some of the steps in the flowcharts of the figures may include a plurality of sub-steps or stages that are not necessarily performed at the same time, but may be performed at different times, the order of their execution not necessarily being sequential, but may be performed in turn or alternately with other steps or at least a portion of the other steps or stages.
The foregoing is only a partial embodiment of the present application, and it should be noted that, for a person skilled in the art, several improvements and modifications can be made without departing from the principle of the present application, and these improvements and modifications should also be considered as the protection scope of the present application.
Claims (14)
1. A display panel comprising a display area and a barrier area, the barrier area surrounding the display area, the display panel comprising:
a substrate base;
a blocking structure located at one side of the substrate base plate and located at the blocking area; the barrier structure comprises a first structure, wherein the first structure comprises a first metal substructure, a second metal substructure and a third metal substructure which are sequentially stacked along a direction away from the substrate; the second metal substructure is in orthographic projection of the substrate, and the first metal substructure and the third metal substructure are in orthographic projection of the substrate;
the pixel structure is positioned on one side of the substrate and is positioned in the display area, the pixel structure comprises a first metal layer and is arranged on the same layer as the first structure, and the material of the first metal layer is the same as that of the first structure.
2. The display panel of claim 1, wherein the second metal substructure is at a first set distance from a boundary of the orthographic projection of the substrate at the first metal substructure.
3. The display panel of claim 1, wherein the orthographic projection of the first metal substructure on the substrate overlaps the orthographic projection of the third metal substructure on the substrate.
4. The display panel of claim 2, wherein the barrier structure further comprises a second structure, the second structure being located on a side of the first structure remote from the substrate,
the second structure comprises a fourth metal substructure, a fifth metal substructure and a sixth metal substructure which are sequentially stacked along a direction away from the substrate; the fifth metal substructure is in orthographic projection on the substrate, and the fourth metal substructure and the sixth metal substructure are in orthographic projection on the substrate; and the fifth metal substructure has a second set distance from the boundary of the orthographic projection of the substrate to the boundary of the orthographic projection of the fourth metal substructure.
5. The display panel of claim 4, wherein the orthographic projection of the sixth metal substructure on the substrate overlaps with the orthographic projection of the fourth metal substructure on the substrate.
6. The display panel of claim 4, wherein the pixel structure comprises a second metal layer disposed in a same layer as the second structure, the second metal layer being of a same material as the second structure.
7. The display panel of claim 6, comprising at least one of:
the first metal layer comprises a first metal sub-layer, a second metal sub-layer and a third metal sub-layer which are sequentially stacked along the direction far away from the substrate base plate; the first metal sub-layer and the third metal sub-layer are the same material, and the second metal sub-layer is different from the first metal sub-layer and the third metal sub-layer; the thickness of the first metal sub-layer and the third metal sub-layer is not less than 300 microns and not more than 600 microns, and the thickness of the second metal sub-layer is not less than 6000 microns and not more than 6500 microns;
the second metal layer comprises a fourth metal sub-layer, a fifth metal sub-layer and a sixth metal sub-layer which are sequentially stacked along the direction far away from the substrate base plate; the fourth metal sub-layer and the sixth metal sub-layer are the same material, and the fifth metal sub-layer is different from the fourth metal sub-layer and the sixth metal sub-layer; the thicknesses of the fourth metal sub-layer and the sixth metal sub-layer are not less than 300 microns and not more than 600 microns, and the thickness of the fifth metal sub-layer is not less than 6000 microns and not more than 6500 microns.
8. The display panel of claim 4, wherein the first set distance and the second set distance are each in a range of no less than 0.3 microns and no more than 0.5 microns.
9. The display panel according to claim 1, wherein the barrier region is provided with at least two of the barrier structures, and a distance between any adjacent two of the barrier structures is not less than 8 micrometers and not more than 15 micrometers.
10. The display panel of claim 4, wherein the fifth metal substructure is in front projection of the substrate within front projection of the second metal substructure.
11. The display panel of claim 4, wherein the orthographic projection of the second metal substructure on the substrate overlaps the orthographic projection of the fifth metal substructure on the substrate.
12. The display panel of claim 4, further comprising at least one of:
the first passivation structure is arranged on one side, far away from the substrate, of the third metal substructure; orthographic projection of the first passivation structure on the substrate covers orthographic projection of the third metal substructure on the substrate;
The second passivation structure is arranged on one side of the sixth metal substructure, which is far away from the substrate base plate; the orthographic projection of the second passivation structure on the substrate covers the orthographic projection of the sixth metal substructure on the substrate.
13. The display panel of claim 12, further comprising: and the organic light-emitting layer is arranged on one side of the second passivation structure far away from the substrate.
14. A display device, characterized by comprising: the display panel of any one of claims 1-13.
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| KR102399574B1 (en) * | 2015-04-03 | 2022-05-19 | 삼성디스플레이 주식회사 | Organic light emitting display apparatus |
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