CN115996590A - Display panel and display device - Google Patents

Abstract

The embodiment of the application provides a display panel and display equipment. In the display panel provided by the embodiment of the application, the barrier structure is arranged on one side of the barrier region of the substrate, the second metal substructure in the barrier structure is in orthographic projection of the substrate, and the first metal substructure and the third metal substructure are positioned in orthographic projection of the substrate, namely, the second metal substructure is laterally retracted relative to the first metal substructure, so that the cross section of the barrier structure is I-shaped, the barrier performance of the barrier structure can be improved, and the reliability of the display panel can be improved. The first metal layer and the first structure of the pixel structure positioned in the display area are arranged on the same layer, and the materials of the first metal layer and the first structure are the same, so that the preparation process of the barrier structure can be simplified, the preparation difficulty of the barrier structure can be reduced, and the preparation cost of the display panel can be reduced.

Description

Display panel and display device

This application is a divisional application of the invention patent application with the application number 202110729219.5 and the invention title "display panel and its preparation method, and display device".

technical field

The present application relates to the field of display technology, and in particular, the present application relates to a display panel and a display device.

Background technique

With the development of display technology, more and more display products using organic light-emitting display panels are favored by users. For special-shaped organic light-emitting display panels, because the shape of the light-emitting area is different from the traditional rectangular light-emitting area, it is necessary to set up a barrier structure to block and isolate the organic light-emitting layer, cathode, etc. from water vapor, so as to ensure the airtightness of the organic light-emitting display panel.

At present, in the preparation process of the organic light emitting display panel, the barrier performance of the barrier structure is low, resulting in a low yield of the organic light emitting display panel.

Contents of the invention

In view of the shortcomings of the existing methods, the present application proposes a display panel and a display device to solve the technical problem of low barrier performance of the barrier structure in the organic light-emitting display panel in the prior art.

In the first aspect, the embodiment of the present application provides a display panel, including a display area and a blocking area, the blocking area surrounds the display area, and the display panel includes:

Substrate substrate;

The barrier structure is located on one side of the base substrate and is located in the barrier area; the barrier structure includes a first structure, and the first structure includes a first metal substructure, a second metal substructure and The third metal substructure; the orthographic projection of the second metal substructure on the base substrate is located within the orthographic projection of the first metal substructure and the third metal substructure on the substrate;

The pixel structure is located on one side of the base substrate and in the display area. The pixel structure includes a first metal layer, which is arranged on the same layer as the first structure. The material of the first metal layer is the same as that of the first structure.

Optionally, the boundary of the orthographic projection of the second metal substructure on the substrate has a first set distance from the boundary of the orthographic projection of the first metal substructure on the substrate.

Optionally, the orthographic projection of the first metal substructure on the substrate overlaps with the orthographic projection of the third metal substructure on the substrate.

Optionally, the barrier structure further includes a second structure, the second structure is located on a side of the first structure away from the base substrate,

The second structure includes a fourth metal substructure, a fifth metal substructure, and a sixth metal substructure that are sequentially stacked in a direction away from the substrate; the orthographic projection of the fifth metal substructure on the substrate is located at the fourth metal substructure. The substructure and the sixth metal substructure are within the orthographic projection of the base substrate; and the boundary of the orthographic projection of the fifth metal substructure on the substrate substrate has a boundary with the boundary of the orthographic projection of the fourth metal substructure on the substrate substrate. 2. Set the distance.

Optionally, the orthographic projection of the fifth metal substructure on the substrate is located within the orthographic projection of the second metal substructure on the substrate.

Optionally, the orthographic projection of the sixth metal substructure on the substrate overlaps with the orthographic projection of the fourth metal substructure on the substrate.

Optionally, the pixel structure includes a second metal layer disposed on the same layer as the second structure, and the material of the second metal layer is the same as that of the second structure.

Optionally, the display panel includes at least one of the following:

The first metal layer includes a first metal sub-layer, a second metal sub-layer and a third metal sub-layer stacked in sequence along the direction away from the base substrate; the materials of the first metal sub-layer and the third metal sub-layer are the same, and the second metal sub-layer The material of the second metal sublayer is different from the material of the first metal sublayer and the third metal sublayer; the thickness of the first metal sublayer and the third metal sublayer is not less than 300 microns and not more than 600 microns, and the second metal sublayer The thickness of the layer is not less than 6000 microns and not more than 6500 microns;

The second metal layer includes a fourth metal sublayer, a fifth metal sublayer and a sixth metal sublayer stacked in sequence along the direction away from the base substrate; the materials of the fourth metal sublayer and the sixth metal sublayer are the same, and the first The material of the fifth metal sublayer is different from the material of the fourth metal sublayer and the sixth metal sublayer; the thickness of the fourth metal sublayer and the sixth metal sublayer is not less than 300 microns and not more than 600 microns, and the fifth metal sublayer The thickness of the layer is not less than 6000 micrometers and not more than 6500 micrometers.

Optionally, the value ranges of the first set distance and the second set distance are not less than 0.3 microns and not more than 0.5 microns.

Optionally, the barrier region is provided with at least two barrier structures, and the distance between any two adjacent barrier structures is not less than 8 microns and not greater than 15 microns.

Optionally, the orthographic projection of the fifth metal substructure on the substrate is located within the orthographic projection of the second metal substructure on the substrate.

Optionally, the orthographic projection of the second metal substructure on the substrate overlaps with the orthographic projection of the fifth metal substructure on the substrate.

Optionally, the display panel also includes:

The first passivation structure is disposed on the side of the third metal substructure away from the base substrate; the orthographic projection of the first passivation structure on the base substrate covers the orthographic projection of the third metal substructure on the base substrate;

The second passivation structure is disposed on a side of the sixth metal substructure away from the substrate; the orthographic projection of the second passivation structure on the substrate covers the orthographic projection of the sixth metal substructure on the substrate.

Optionally, the display panel further includes: an organic light emitting layer disposed on a side of the second passivation structure away from the base substrate.

In a second aspect, an embodiment of the present application provides a display device, including: the display panel provided in the first aspect above.

The beneficial technical effects brought by the technical solutions provided by the embodiments of the present application include:

In the display panel provided by the embodiment of the present application, by setting the barrier structure on the side of the base substrate located in the barrier region, the orthographic projection of the second metal substructure in the barrier structure on the base substrate is located between the first metal substructure and the The third metal substructure is within the orthographic projection of the substrate, that is, the second metal substructure is laterally indented relative to the first metal substructure, so that the cross-sectional shape of the barrier structure is set to an I-shape, thereby improving the barrier of the barrier structure performance, which can improve the reliability of the display panel.

Moreover, by setting the first metal layer of the pixel structure located in the display area on the same layer as the first structure, and the materials of the two are the same, the preparation process of the barrier structure can be simplified, the difficulty of preparing the barrier structure can be reduced, and the display can be reduced. Panel preparation costs.

Additional aspects and advantages of the application will be set forth in part in the description which follows, and will become apparent from the description, or may be learned by practice of the application.

Description of drawings

The above and/or additional aspects and advantages of the present application will become apparent and easy to understand from the following description of the embodiments in conjunction with the accompanying drawings, wherein:

FIG. 1 is a schematic flow chart of a method for preparing a display panel provided in an embodiment of the present application;

FIG. 2 is a schematic flowchart of another method for preparing a display panel provided in the embodiment of the present application;

Fig. 3 is a structural schematic diagram after preparing a photoresist structure on the side of the second passivation layer away from the base substrate;

FIG. 4 is a structural schematic diagram of barriers formed at the ends of the second metal structure and the first metal structure;

5 is a schematic diagram of the structure obtained after stripping off the blocking portion and the photoresist structure;

Fig. 6 is a structural schematic diagram after etching the second metal structure and the first metal structure to obtain a barrier structure;

Fig. 7 is a schematic top view of the structure shown in Fig. 6 provided by the embodiment of the present application;

Fig. 8 is a structural schematic diagram after etching the second metal structure and the first metal structure to obtain another barrier structure;

FIG. 9 is a schematic diagram after peeling off the photoresist layer on the side of the base substrate located in the display area and preparing a pixel definition structure and an organic light-emitting layer;

FIG. 10 is a schematic structural diagram of a display panel provided by an embodiment of the present application;

FIG. 11 is a schematic structural diagram of another display panel provided by an embodiment of the present application;

FIG. 12 is a schematic structural diagram of another display panel provided by an embodiment of the present application.

Explanation of reference signs:

10-substrate substrate;

20—barrier structure; 21—the first structure of the barrier structure; 211—the first metal substructure; 212—the second metal substructure; 213—the third metal substructure; 22—the second structure of the barrier structure 20; 221— 4th metal substructure; 222-fifth metal substructure; 223-sixth metal substructure;

30 - a first passivation structure;

40 - a second passivation structure;

60 - blocking part;

101-buffer layer;

102 - the first gate insulating layer;

103 - the second gate insulating layer;

104 - active layer;

105 - the first gate layer;

106-interlayer insulating layer;

107-first metal layer; 1071-first metal structure;

108 - the first planarization layer;

109 - a first passivation layer;

110-second metal layer; 1101-second metal structure;

111 - the second passivation layer;

112 - the second planarization layer;

113 - anode layer;

114-photoresist layer; 1141-photoresist structure;

115 - the second gate layer;

116-pixel definition structure;

117-organic light-emitting layer;

201-display area; 202-barrier area.

Detailed ways

The present application is described in detail below, and examples of embodiments of the present application are shown in the drawings, wherein the same or similar reference numerals denote the same or similar components or components having the same or similar functions throughout. Also, detailed descriptions of known technologies will be omitted if they are not necessary to illustrate the features of the present application. The embodiments described below by referring to the figures are exemplary only for explaining the present application, and are not construed as limiting the present application.

Those skilled in the art can understand that, unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meanings as commonly understood by those of ordinary skill in the art to which this application belongs. It should also be understood that terms, such as those defined in commonly used dictionaries, should be understood to have meanings consistent with their meaning in the context of the prior art, and unless specifically defined as herein, are not intended to be idealized or overly Formal meaning to explain.

Those skilled in the art will understand that unless otherwise stated, the singular forms "a", "an", "said" and "the" used herein may also include plural forms. It should be further understood that the word "comprising" used in the specification of the present application refers to the presence of the features, integers, steps, operations, elements and/or components, but does not exclude the presence or addition of one or more other features, Integers, steps, operations, elements, components, and/or groups thereof. It will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The expression "and/or" used herein includes all or any elements and all combinations of one or more associated listed items.

The inventors of the present application conducted research and found that for special-shaped organic light-emitting display panels, since the shape of the light-emitting area is different from the traditional rectangular light-emitting area, it is necessary to set up a barrier structure to block and isolate the organic light-emitting layer and cathode from water vapor, so as to protect the organic light-emitting area. Luminous display panel hermeticity. At present, the cross-sectional shape of the barrier structure is mostly I-shaped. In the manufacturing process of the organic light-emitting display panel, it is necessary to use the difference in the etching rate of the etching solution for different metal materials to form the I-shaped barrier structure through an etching process. However, during the preparation process of the barrier structure, the two parts of the barrier structure are likely to generate by-products such as barrier parts, which makes it difficult for the etching solution to directly contact the metal material of the barrier structure, resulting in a low formation rate of the I-shaped barrier structure, which in turn leads to The yield rate of organic light emitting display panels is relatively low.

Moreover, the side of the existing I-shaped barrier structure away from the substrate is usually a single-layer metal structure. During the subsequent manufacturing process of the organic light-emitting display panel, the single-layer metal structure is prone to problems such as fracture and collapse, resulting in The zigzag barrier structure loses its barrier effect, further reducing the formation rate of the I-shaped barrier structure.

The display panel, its manufacturing method, and display device provided by the present application aim to solve the above technical problems in the prior art.

The technical solution of the present application and how the technical solution of the present application solves the above technical problems will be described in detail below with specific embodiments.

The embodiment of the present application provides a method for manufacturing a display panel. The schematic flow chart of the method is shown in Figure 1, including steps S101-S105:

S101 , sequentially preparing a first metal layer 107 and a first passivation layer 109 on the side of the base substrate 10 located at the barrier region 202 .

S102, preparing a photoresist structure 1141 on the side of the first passivation layer 109 away from the base substrate 10;

S103 , patterning the first passivation layer 109 and the first metal layer 107 based on the photoresist structure 1141 to obtain a first passivation structure and a first metal structure, and a barrier portion is formed at an end of the first metal structure.

S104 , peeling off the blocking portion 60 and the photoresist structure 1141 .

S105. Etching the first metal structure to obtain the first structure 21 of the barrier structure 20, so that in the first structure 21, the orthographic projection of the second metal substructure 212 on the base substrate 10 is located between the first metal substructure 211 and the third The metal substructure 213 is within the orthographic projection of the substrate 10 ; the first metal substructure 211 , the second metal substructure 212 and the third metal substructure 213 are stacked.

In the manufacturing method of the display panel provided by the embodiment of the present application, after the first passivation layer 109 and the first metal layer 107 are patterned based on the photoresist structure 1141 to obtain the first passivation structure 30 and the first metal structure 1071, in time Stripping off the barrier portion 60 formed at the end of the first metal structure 1071 can avoid the impact of the barrier portion 60 on the subsequent etching process of the first metal structure 1071, so as to ensure that the second metal substructure 212 in the first structure 21 is formed on the substrate. The orthographic projection of the base substrate 10 is located within the orthographic projection of the first metal substructure 211 and the third metal substructure 213 on the base substrate 10, so that the formation rate of the first structure 21 can be ensured, and the formation of the barrier structure 20 can be ensured. The rate can ensure the yield rate of the organic light emitting display panel.

Moreover, since the first passivation layer 109 is prepared on the side of the first metal layer 107 away from the base substrate 10, the third metal substructure 213 of the formed first structure 21 is formed on the side away from the base substrate 10. The first passivation structure 30, the first passivation structure 30 can enhance the rigidity of the third metal substructure 213, thereby reducing the probability of problems such as fracture and collapse of the third metal substructure 213, thereby ensuring the reliability of the barrier structure 20 properties, ensuring the formation rate of the barrier structure 20 .

In one embodiment of the present application, the above step S105 specifically includes: etching the first metal sublayer, the second metal sublayer and the third metal sublayer of the first metal structure to form the first metal sublayer of the first structure 21. The metal substructure 211, the second metal substructure 212 and the third metal substructure 213, until the boundary of the orthographic projection of the second metal substructure 212 on the base substrate 10, and the first metal substructure 211 and the third metal substructure The boundary of the orthographic projection of 213 on the base substrate 10 has a first set distance d1.

In the embodiment of the present application, by defining the boundary of the orthographic projection of the second metal substructure 212 on the base substrate 10, it has the same The first set distance d1 makes the barrier structure to be obtained meet the requirements to ensure the performance of the barrier structure, so as to further ensure the formation rate of the barrier structure and the yield rate of the organic light emitting display panel.

It should be noted that, as shown in FIG. 10 and FIG. 11 , the first set distance d1 refers to the distance of the orthographic projection of the second metal substructure 212 on the base substrate 10 along the direction from the display area 201 to the barrier area 202 Boundary, the distance from the boundary of the orthographic projection of the first metal substructure 211 and the third metal substructure 213 on the base substrate 10 .

The embodiment of the present application provides another method for preparing a display panel. The schematic flow chart of the preparation method is shown in FIG. 2 , including steps S201-S205:

S201 , sequentially prepare a first metal layer 107 and a first passivation layer 109 on the side of the base substrate 10 located at the barrier region 202 .

In some possible implementation manners, the first metal layer 107 and the first passivation layer 109 are sequentially prepared on the side of the base substrate 10 located at the barrier region 202 . Optionally, the first metal layer 107 includes at least three metal sub-layers stacked, and the metal sub-layers are made of different metal materials. The difference forms an I-shaped barrier structure 20. Optionally, in the embodiment of the present application, the first metal layer 107 includes three layers of metal sub-layers stacked, and the etching rate of the metal sub-layer interposed between the upper and lower two metal sub-layers is greater than that of the upper and lower two metal sub-layers. The etch rate of the sublayer. Optionally, the upper and lower metal sublayers are made of Ti (titanium), and the metal sublayer sandwiched between the upper and lower metal sublayers is made of Al (aluminum).

In some possible implementations, the first metal layer 107 and the first passivation layer 109 can be prepared simultaneously with the related film layers of the pixel structure located in the display area 201 . In this way, the manufacturing process of the barrier structure 20 can be simplified, the difficulty of manufacturing the barrier structure 20 can be reduced, and the manufacturing cost of the barrier structure 20 can be reduced, thereby reducing the manufacturing cost of the display panel. Optionally, in the embodiment of the present application, the first metal layer 107 located in the barrier area 202 and the first metal layer 107 located in the display area 201 are prepared at the same time, the first passivation layer 109 located in the barrier area 202 and the first metal layer 107 located in the display area The first passivation layer 109 in the region 201 is prepared at the same time.

Optionally, before sequentially preparing the first metal layer 107 and the first passivation layer 109 on the side of the base substrate 10 located at the barrier region 202 , further comprising: preparing an interlayer on the side of the base substrate 10 located at the barrier region 202 The insulating layer 106 , the interlayer insulating layer 106 located in the barrier area 202 and the interlayer insulating layer 106 located in the display area 201 are prepared simultaneously. Then, the first metal layer 107 and the first passivation layer 109 are sequentially prepared on the side of the interlayer insulating layer 106 away from the base substrate 10 .

S202 , preparing the second metal layer 110 and the second passivation layer 111 in sequence on the side of the first passivation layer 109 away from the base substrate 10 .

In some possible implementation manners, the second metal layer 110 and the second passivation layer 111 are sequentially prepared on the side of the first passivation layer 109 away from the base substrate 10 . Optionally, the second metal layer 110 includes at least three metal sub-layers stacked, and the metal sub-layers are made of different metal materials. The difference forms an I-shaped barrier structure 20. Optionally, in the embodiment of the present application, the second metal layer 110 includes three layers of metal sub-layers stacked, and the etching rate of the metal sub-layer sandwiched between the upper and lower two metal sub-layers is greater than that of the upper and lower metal sub-layers. The etch rate of the sublayer. Optionally, the upper and lower metal sublayers are made of Ti (titanium), and the metal sublayer sandwiched between the upper and lower metal sublayers is made of Al (aluminum).

In some possible implementations, the second metal layer 110 and the second passivation layer 111 can be prepared simultaneously with the related film layers of the pixel structure located in the display area 201 . In this way, the manufacturing process of the barrier structure 20 can be further simplified, the difficulty of manufacturing the barrier structure 20 can be further reduced, and the manufacturing cost of the barrier structure 20 can be further reduced, thereby further reducing the manufacturing cost of the display panel. Optionally, in this embodiment of the present application, the second metal layer 110 located in the barrier area 202 and the second metal layer 110 located in the display area 201 are prepared at the same time, the second passivation layer 111 located in the barrier area 202 and the second metal layer 110 located in the display area The second passivation layer 111 in the region 201 is prepared at the same time.

S203 , preparing a photoresist structure 1141 on a side of the second passivation layer 111 away from the base substrate 10 .

In some possible implementation manners, a photoresist structure 1141 is prepared on a side of the second passivation layer 111 located in the blocking region 202 away from the base substrate 10 , as shown in FIG. 3 . Optionally, the photoresist layer 114 used to prepare the photoresist structure 1141 can be prepared simultaneously with the photoresist layer 114 of the pixel structure located in the display area 201 . In the embodiment of the present application, two photoresist structures 1141 are prepared on the side of the second passivation layer 111 away from the base substrate 10 .

It should be noted that, as shown in FIG. 3 , the region for preparing the pixel structure is the display region 201 , and the region for preparing the barrier structure 20 is the barrier region 202 .

S204, pattern the second passivation layer 111, the second metal layer 110, the first passivation layer 109, and the first metal layer 107 based on the photoresist structure 1141, to obtain the second passivation structure 40, the second metal structure 1101, the second A passivation structure 30 and the first metal structure 1071 , and the ends of the second metal structure 1101 and the first metal structure 1071 are formed with barrier portions 60 .

In some possible implementations, the second passivation layer 111, the second metal layer 110, the first passivation layer 109, and the first metal layer 107 are patterned based on the two photoresist structures 1141 to obtain two second passivation layers. structure 40, two second metal structures 1101, two first passivation structures 30, and two first metal structures 1071, and the ends of the two second metal structures 1101 and the two first metal structures 1071 are formed with The blocking portion 60 is shown in FIG. 4 .

Optionally, based on the two photoresist structures 1141, the second passivation layer 111 is dry etched using a combined atmosphere of CF4 (carbon tetrafluoride) and O2 (oxygen), so that after the second passivation layer 111 is patterned Form the second passivation structure 40; continue to use the combined atmosphere of BCl3 (boron trichloride) and Cl2 (chlorine gas) to dry-etch the second metal layer 110, so that the second metal layer 110 is patterned to form a second metal structure 1101 , and during the dry etching process, barrier portions 60 will be formed at both ends of the second metal structure 1101 . Adopt the combined atmosphere of CF4 (carbon tetrafluoride) and O2 (oxygen) to dry etch the first passivation layer 109, so that the first passivation layer 109 is patterned to form the first passivation structure 30; continue to use BCl3 ( The combined atmosphere of boron trichloride) and Cl2 (chlorine gas) performs dry etching on the first metal layer 107, so that the first metal layer 107 is patterned to form the first metal structure 1071, and in the dry etching process, the first metal structure 1071 will be formed in the first metal layer 107 Two ends of a metal structure 1071 form the blocking portion 60 .

It should be noted that, in the manufacturing process of the display panel, since the first metal layer 107 located in the barrier area 202 and the first metal layer 107 located in the display area 201 are prepared at the same time, and for the first metal layer 107 located in the display area 201 The layer 107 will be processed by a patterning process. Therefore, during the patterning process of the first metal layer 107 located in the display area 201, the first metal layer 107 located in the barrier area 202 can be patterned at the same time, so that in In step S204 , the process step of patterning the first metal layer 107 based on the photoresist structure 1141 can be omitted. The manufacturing process of the barrier structure 20 can be further simplified, the difficulty of manufacturing the barrier structure 20 can be further reduced, and the manufacturing cost of the barrier structure 20 can be further reduced, thereby further reducing the manufacturing cost of the display panel.

Optionally, the thickness of the photoresist structure 1141 is not less than 1.5 microns, not more than 1.8 microns

S205 , peeling off the blocking portion 60 and the photoresist structure 1141 .

In some possible implementations, a wet stripping process is used to strip the barrier portions 60 located at both ends of the second metal structure 1101 , the barrier portions 60 located at both ends of the first metal structure 1071 , and the barrier portions 60 located at both ends of the second passivation layer 111 away from the The photoresist structure 1141 on one side of the base substrate 10 has a structure as shown in FIG. 5 .

S206, etching the first metal structure 1071 and the second metal structure 1101 to obtain the first structure 21 and the second structure 22 of the barrier structure 20 respectively, so that in the second structure 22, the fifth metal substructure 222 is on the base substrate 10 The orthographic projection of the fourth metal substructure 221 and the sixth metal substructure 223 are located within the orthographic projection of the base substrate 10; and make the second metal substructure 212 in the first structure 21 The projection is located within the orthographic projection of the first metal substructure 211 and the third metal substructure 213 on the base substrate 10 .

Optionally, the fourth metal substructure 221 , the fifth metal substructure 222 and the sixth metal substructure 223 are stacked. Optionally, the first metal substructure 211 , the second metal substructure 212 and the third metal substructure 213 are stacked.

In some possible implementations, the structure shown in FIG. 5 is etched with an etchant. Due to the differences in the etch rates of the metal materials in the second metal structure 1101 to the etchant, the second structure 22 The orthographic projections of the middle and fifth metal substructures 222 on the substrate 10 are located within the orthographic projections of the fourth metal substructure 221 and the sixth metal substructure 223 on the substrate 10, that is, the fifth metal substructure 222 The ends are indented relative to both the fourth metal substructure 221 and the sixth metal substructure 223 .

Similarly, in the first structure 21, the orthographic projection of the second metal substructure 212 on the substrate 10 is located within the orthographic projection of the first metal substructure 211 and the third metal substructure 213 on the substrate 10, that is The ends of the second metal substructure 212 are indented relative to the first metal substructure 211 and the third metal substructure 213 , as shown in FIG. 6 .

In the embodiment of the present application, the etching solution includes CH3COOH, HNO3 and H3PO4, and the content of CH3COOH is not less than 10% and not more than 20%; the content of HNO3 is not less than 1% and not more than 2.5%; the content of H3PO4 is not less than 50%, but not more than 60%.

Optionally, the barrier area 202 of the display panel in FIG. 6 is provided with two barrier structures 20, and each barrier structure 20 includes two I-shaped structures stacked up and down, so that the barrier structure 20 is a double I-shaped structure, so that it can Improving the barrier performance of the barrier structure 20 improves the reliability of the display panel.

Optionally, as shown in FIG. 7 , the display panel includes a display area 201 and a barrier area 202 surrounding the display area 201 , and two barrier structures 20 are disposed in the barrier area 202 . It should be noted that, in the embodiment of the present application, the orthographic projection of the second metal substructure 212 on the substrate 10 overlaps with the orthographic projection of the fifth metal substructure 222 on the substrate 10. Therefore, only The second metal substructure 212 and the fifth metal substructure 222 are represented by two dashed lines.

In the embodiment of the present application, since the first passivation layer 109 is prepared on the side of the first metal layer 107 away from the base substrate 10 , the third metal substructure 213 of the formed first structure 21 is far away from the side of the base substrate 10 A first passivation structure 30 is formed on one side, and the first passivation structure 30 can enhance the rigidity of the third metal substructure 213, thereby reducing the probability of problems such as fracture and collapse of the third metal substructure 213; The second passivation structure 40 is formed on the side of the sixth metal substructure 223 in the second structure 22 away from the base substrate 10. The second passivation structure 40 can enhance the rigidity of the sixth metal substructure 223, thereby reducing the sixth metal substructure 223. The substructure 223 has the probability of problems such as fracture and collapse, thereby ensuring the reliability of the barrier structure 20 and the formation rate of the barrier structure 20 .

In one embodiment of the present application, the second structure 22 of the barrier structure 20 is obtained by etching the second metal structure 1101 above, so that in the second structure 22, the orthographic projection of the fifth metal substructure 222 on the substrate 10 is located at The fourth metal substructure 221 and the sixth metal substructure 223 are in the orthographic projection of the base substrate 10; the fourth metal substructure 221, the fifth metal substructure 222 and the sixth metal substructure 223 are stacked, including:

The fourth metal sublayer, the fifth metal sublayer and the sixth metal sublayer of the second metal structure 1101 are etched to form the fourth metal substructure 221, the fifth metal substructure 222 and the sixth metal substructure of the second structure 22. The metal substructure 223, until the boundary of the orthographic projection of the fifth metal substructure 222 on the base substrate 10, has the second Set the distance d2.

In the embodiment of the present application, by defining the boundary of the orthographic projection of the fifth metal substructure 222 on the base substrate 10, it has the same The second set distance d2 makes the prepared barrier structure 20 meet the requirements to ensure the performance of the barrier structure 20, thereby further ensuring the formation rate of the barrier structure 20 and the yield rate of the organic light emitting display panel.

In the embodiment of the present application, as shown in FIG. 11 , the second set distance d2 refers to the boundary of the orthographic projection of the fifth metal substructure 222 on the base substrate 10 along the direction from the display area 201 to the barrier area 202 , The distance between the boundaries of the fourth metal substructure 221 and the sixth metal substructure 223 on the orthographic projection of the base substrate 10 .

It should be noted that, in the direction perpendicular to the base substrate 10, due to the difference in height between the first metal structure 1071 and the second metal structure 1101, during the wet etching process, when the etchant flows from top to bottom The flow rate of the etching solution contacted by the second metal structure 1101 above the first metal structure 1071 is faster, so the degree of etching of the second metal structure 1101 is greater than that of the first metal structure 1071 . Therefore, the second set distance d2 in the formed second structure 22 is greater than the first set distance d1 in the first structure 21 , as shown in FIG. 8 .

In one embodiment of the present application, the photoresist structure 1141 is prepared on the side of the first passivation layer 109 away from the base substrate 10, including:

Prepare a photoresist layer 114 on the side of the first passivation layer 109 away from the base substrate 10, so that the photoresist layer 114 covers the quasi-pixel structure of the base substrate 10 on the side of the display area 201; pattern the photoresist layer 114, so that A portion of the photoresist layer 114 located in the blocking region 202 forms a photoresist structure 1141 .

Optionally, a photoresist layer 114 is prepared on the side of the second passivation layer 111 away from the base substrate 10, so that the photoresist layer 114 covers the quasi-pixel structure of the base substrate 10 on the side of the display area 201, specifically, such that The photoresist layer 114 covers the anode layer 113 of the quasi-pixel structure, the second passivation layer 111 and the ends of each film layer of the quasi-pixel structure, thereby avoiding the influence of the preparation process of the barrier structure 20 on the quasi-pixel structure; the patterned photoresist layer 114 , so that the portion of the photoresist layer 114 located in the blocking region 202 forms a photoresist structure 1141 .

In some possible implementation manners, as shown in FIGS. 3-9 , the quasi-pixel structure of the base substrate 10 on the side of the display region 201 includes: an active layer 104 , a first gate layer 105 , and an interlayer insulating layer 106 , the first metal layer 107, the first planarization layer 108, the first passivation layer 109, the second metal layer 110, the second passivation layer 111, the second planarization layer 112, the anode layer 113, the photoresist layer 114 and The second gate layer 115 is located on the side of the second gate insulating layer 103 away from the base substrate 10 . A buffer layer 101 , a first gate insulating layer 102 and a second gate insulating layer 103 are further provided on one side of the base substrate 10 .

Optionally, the quasi-pixel structure located on one side of the display area 201 is used to form a pixel structure in a subsequent display panel.

In some possible implementation manners, the preparation process of the quasi-pixel structure where the base substrate 10 is located on the side of the display region 201 includes:

Deposit and prepare buffer layer 101 on one side of base substrate 10, the preparation material of buffer layer 101 includes silicon nitride, silicon oxide, etc., wherein, the thickness of silicon nitride is not less than 0.3 microns, not more than 0.7 microns; the thickness of silicon oxide Not less than 1 micron, not more than 1.2 microns. Deposit and prepare the active layer 104 on the side of the buffer layer 101 located at the display region 201, the preparation material of the active layer 104 is amorphous silicon, the thickness of the active layer 104 is 0.05 micron, and the active layer 104 is dehydrogenated , the temperature of the dehydrogenation treatment is not less than 300°C and not more than 350°C; then the active layer 104 is subjected to ELA (Excimer Laser Annealing, excimer laser annealing) treatment, so that part of the amorphous silicon in the active layer 104 is converted into polysilicon and then dry etching the active layer 104, specifically, using a combined atmosphere of CF4 (carbon tetrafluoride) and O2 (oxygen) to carry out dry etching on the active layer 104, and then complete the active layer 104 after wet stripping Patterning, forming a mask in the non-capacitive area, performing ion implantation to conduct the polysilicon doping in the capacitive area, and doping can use phosphine or borane.

Deposit and prepare the first gate insulating layer 102 on one side of the patterned active layer 104. The material for the first gate insulating layer 102 includes silicon nitride and silicon oxide, and the thickness of silicon nitride is not less than 0.05 microns. Not more than 0.09 microns; the thickness of silicon oxide is not less than 0.03 microns, not more than 0.06 microns.

Deposit and prepare a gate metal layer on one side of the first gate insulating layer 102, and then pattern the gate metal layer, specifically, use a combined atmosphere of SF6 (sulfur hexafluoride) and O2 (oxygen) to The layer is dry-etched to complete the patterning of the gate metal layer; or, a combined atmosphere of CF4 (carbon tetrafluoride) at a high flow rate and O2 (oxygen gas) at a low flow rate is used. Optionally, the flow rate of CF4 is 2000-2500 sccm (Standard Cubic Centimeter per Minute, standard milliliter per minute) The flow rate of O2 (oxygen) is 1000-1500 sccm, and the flow rate of CF4 and O2 include the end values of their respective ranges. Complete the patterning of the gate metal layer, so that the first gate layer 105 is deposited on one side of the display area 201. The material for the first gate layer 105 includes metal molybdenum, and the thickness of the first gate layer 105 is not less than 0.25 microns , not greater than 0.3 microns.

Deposit and prepare the second gate insulating layer 103 on one side of the first gate layer 105, and then adopt the same preparation process as that of the first gate layer 105 to prepare on one side of the second gate insulating layer 103 to obtain The second gate layer 115 .

An interlayer insulating layer 106 is deposited on one side of the second gate layer 115. Optionally, the material for making the interlayer insulating layer 106 includes silicon nitride and silicon oxide, and the thickness of the silicon nitride is not less than 0.2 microns and not greater than 0.3 microns; the thickness of silicon oxide is not less than 0.2 microns and not more than 0.5 microns. Then, a via hole is formed through a photolithography process, so that at least part of the active layer 104 is exposed. Specifically, a combined atmosphere of CF4 (carbon tetrafluoride) and O2 (oxygen) can be used to form the interlayer insulating layer 106 and the second gate. The electrode insulating layer 103 and the first gate insulating layer 102 are dry etched to form via holes so that at least part of the active layer 104 is exposed.

Deposit and prepare the first metal layer 107 on one side of the interlayer insulating layer 106. In the embodiment of the present application, the first metal layer 107 is a Ti (titanium)/Al (aluminum)/Ti (titanium) film structure, and Ti (titanium) ) is not less than 300 microns and not more than 600 microns; the thickness of Al (aluminum) is not less than 6000 microns and not more than 6500 microns. Optionally, a combined atmosphere of BCl3 (boron trichloride) and Cl2 (chlorine gas) is used to perform dry etching on the first metal layer 107 to achieve patterning of the first metal layer 107 .

The first planarization layer 108 is prepared on one side of the first metal layer 107 by coating, exposure, development, post-baking and other processes, and the thickness of the first planarization layer 108 is not less than 1.5 microns and not more than 2 microns. Then, a via hole is opened in the portion of the first planarization layer 108 corresponding to the source region of the active layer 104 . Deposit and prepare the first passivation layer 109 on one side of the first planarization layer 108, the fabrication material of the first passivation layer 109 comprises silicon nitride, and then perform dry etching on the first passivation layer 109 and the first planarization layer. Vias are formed in regions corresponding to the vias of the layer 108.

Deposit and prepare the second metal layer 110 on one side of the interlayer insulating layer 106. In the embodiment of the present application, the second metal layer 110 is a Ti (titanium)/Al (aluminum)/Ti (titanium) film layer structure, and Ti (titanium ) is not less than 300 microns and not more than 600 microns; the thickness of Al (aluminum) is not less than 6000 microns and not more than 6500 microns. Optionally, a combined atmosphere of BCl3 (boron trichloride) and Cl2 (chlorine gas) is used to perform dry etching on the second metal layer 110 to achieve patterning of the second metal layer 110 .

A second passivation layer 111 is prepared on one side of the second metal layer 110, and the material of the second passivation layer 111 includes silicon nitride. A second planarization layer 112 is prepared on one side of the second passivation layer 111 by coating, exposure, development, post-baking and other processes, and the thickness of the second planarization layer 112 is not less than 1.5 microns and not more than 2 microns. Then, a via hole is opened in the portion of the second planarization layer 112 corresponding to the source region of the active layer 104 .

An anode layer 113 is prepared on one side of the second planarization layer 112 , so that at least part of the anode layer 113 is connected to the first metal layer 107 through via holes. Then prepare a photoresist layer 114 on one side of the anode layer 113, so that the photoresist layer 114 covers the anode layer 113 of the quasi-pixel structure, the second passivation layer 111 and the ends of each film layer of the quasi-pixel structure, thereby avoiding the barrier structure 20 The preparation process has an impact on the pixel structure

After the preparation of the barrier structure 20 in the barrier region 202 is completed, the photoresist layer 114 in the display region 201 is peeled off, and then the pixel definition structure 116 is prepared on the side of the anode layer 113 by using processes such as coating, exposure, development, and post-baking. . The organic light emitting layer 117 is deposited and prepared on one side of the pixel definition structure 116 , as shown in FIG. 9 , the organic light emitting layer 117 is blocked by the barrier structure 20 . In the embodiment of the present application, the thickness of the pixel defining structure 116 is not less than 1.4 microns and not more than 1.8 microns.

Based on the same inventive concept, an embodiment of the present application provides a display panel, including a display area 201 and a blocking area 202 , and the blocking area 202 surrounds the display area 201 . A schematic structural view of the display panel is shown in FIG. 10 . The display panel includes: a base substrate 10 , a barrier structure 20 and a first passivation structure 30 .

The barrier structure 20 is located on one side of the base substrate 1 and is located in the barrier region 202; the barrier structure 20 includes a first structure 21, and the first structure 21 includes first metal substructures that are sequentially stacked in a direction away from the base substrate 10 211, the second metal substructure 212 and the third metal substructure 213, the orthographic projection of the second metal substructure 212 on the base substrate 10, located on the first metal substructure 211 and the third metal substructure 213 on the base substrate 10 In the orthographic projection of ; the first passivation structure 30 is located on the side of the barrier structure 20 away from the base substrate 10 .

In the embodiment of the present application, the display panel includes a display area 201 and a barrier area 202 adjacent to the display area 201 . As shown in FIG. 7 , the barrier region 202 is provided with a barrier structure 20, and the barrier structure 20 includes a first metal substructure 211, a second metal substructure 212, and a third metal substructure 213 arranged in a stacked manner. In the cross-sectional direction, the cross-sectional shape of the barrier structure 20 is I-shaped.

In the embodiment of the present application, by setting the cross-sectional shape of the barrier structure 20 as an I-shape, the barrier performance of the barrier structure 20 can be improved, and the reliability of the display panel can be improved.

In one embodiment of the present application, the boundary of the orthographic projection of the second metal substructure 212 on the substrate 10 has a first set distance d1 from the boundary of the orthographic projection of the first metal substructure 211 on the substrate 10 . The prepared barrier structure meets the requirements to ensure the performance of the barrier structure, thereby further ensuring the formation rate of the barrier structure and the yield rate of the organic light-emitting display panel.

Optionally, the orthographic projection of the first passivation structure 30 on the base substrate 10 covers the orthographic projection of the third metal substructure 213 on the base substrate 10 . Thereby ensuring that the first passivation structure 30 can completely cover the third metal substructure 213, so as to enhance the rigidity of the third metal substructure 213, thereby reducing the probability of problems such as fracture and collapse of the third metal substructure 213, thereby ensuring The reliability of the barrier structure 20 ensures the formation rate of the barrier structure 20 .

In one embodiment of the present application, the orthographic projection of the first metal substructure 211 on the substrate 10 overlaps with the orthographic projection of the third metal substructure 213 on the substrate 10 . That is, the boundary of the orthographic projection of the second metal substructure 212 on the base substrate 10 has a first set distance d1 from the boundary of the orthographic projection of the third metal substructure 213 on the base substrate 10 .

In one embodiment of the present application, as shown in FIG. 11 , the barrier structure 20 further includes a second structure 22, the second structure 22 is located on the side of the first structure 21 away from the substrate 10, and the second passivation structure 40 is located A second passivation structure 40 is provided on the side of the second structure 22 away from the base substrate 10; the second structure 22 includes a fourth metal substructure 221 and a fifth metal substructure stacked in sequence along the direction away from the base substrate 10 222 and the sixth metal substructure 223 , the orthographic projection of the fifth metal substructure 222 on the substrate 10 is located within the orthographic projection of the fourth metal substructure 221 on the substrate 10 .

Optionally, the boundary of the orthographic projection of the fifth metal substructure 222 on the substrate 10 has a second set distance d2 from the boundary of the orthographic projection of the fourth metal substructure 221 on the substrate 10 . The prepared barrier structure meets the requirements to ensure the performance of the barrier structure, thereby further ensuring the formation rate of the barrier structure and the yield rate of the organic light-emitting display panel.

Optionally, the orthographic projection of the sixth metal substructure 223 on the substrate 10 overlaps with the orthographic projection of the fourth metal substructure 221 on the substrate 10 . That is, the boundary of the orthographic projection of the fifth metal substructure 222 on the base substrate 10 has a second set distance d2 from the boundary of the orthographic projection of the sixth metal substructure 223 on the base substrate 10 .

Optionally, the orthographic projection of the second passivation structure 40 on the base substrate 10 covers the orthographic projection of the sixth metal substructure 223 on the base substrate 10 . Thereby ensuring that the second passivation structure 40 can completely cover the sixth metal substructure 223, so as to enhance the rigidity of the sixth metal substructure 223, thereby reducing the probability of problems such as fracture and collapse of the sixth metal substructure 223, thereby ensuring The reliability of the barrier structure 20 ensures the formation rate of the barrier structure 20 .

In one embodiment of the present application, the orthographic projection of the fifth metal substructure 222 on the substrate 10 is located within the orthographic projection of the second metal substructure 212 on the substrate 10 .

In one embodiment of the present application, an organic light-emitting layer 117 is disposed on a side of the second passivation structure 40 away from the base substrate 10 . As known above, when the organic light-emitting layer 117 is deposited on one side of the pixel-defining structure 116, the side of the second passivation structure 40 in the barrier structure 20 located in the barrier region 202 away from the base substrate 10 will also form an organic light-emitting layer. The layer 117 is blocked by the blocking structure 20 , so that the part of the organic light-emitting layer 117 located in the display area 201 and the part located in the blocking area 202 are isolated, as shown in FIG. 9 . The part of the organic light emitting layer 117 located in the display area 201 is in contact with the anode layer 113 , and this part of the organic light emitting layer 117 can emit light normally during the operation of the display panel.

It should be noted that, in the embodiment of the present application, by disposing the organic light-emitting layer 117 on the side of the second passivation structure 40 away from the base substrate 10, in the manufacturing process of the display panel, the organic light-emitting layer located in the display area 201 117 and the organic light-emitting layer 117 located in the barrier region 202 are manufactured and formed simultaneously, so that the use of a mask plate can be avoided during the process of forming the organic light-emitting layer 117, thereby reducing the manufacturing cost of the display panel.

In an embodiment of the present application, the value ranges of the first set distance d1 and the second set distance d2 are both 0.3-0.5 microns. It should be noted that the values of the first set distance d1 and the second set distance d2 both include end values of 0.3 μm and 0.5 μm.

In an embodiment of the present application, the blocking region 202 may be provided with a plurality of blocking structures 20 , and the distance d3 between two adjacent blocking structures 20 is 8-15 μm. It should be noted that the values of the distance d3 between two adjacent barrier structures 20 include ends 8 microns and 15 microns. Optionally, as shown in FIG. 12 , the barrier area 202 may be provided with two barrier structures 20 .

It should be noted that, as shown in FIG. 12 , the distance d3 refers to the distance between two adjacent barrier structures 20 along the direction from the display area 201 to the barrier area 202 .

Based on the same inventive concept, an embodiment of the present application provides a display device, including: the display panel provided by each of the above embodiments, or including: a display panel prepared by using the method for preparing a display panel provided by each of the above embodiments.

By applying the embodiment of the present application, at least the following beneficial effects can be achieved:

In the manufacturing method of the display panel provided by the embodiment of the present application, after the first passivation layer 109 and the first metal layer 107 are patterned based on the photoresist structure 1141 to obtain the first passivation structure 30 and the first metal structure 1071, in time Stripping off the barrier portion 60 formed at the end of the first metal structure 1071 can avoid the impact of the barrier portion 60 on the subsequent etching process of the first metal structure 1071, so as to ensure that the second metal substructure 212 in the first structure 21 is formed on the substrate. The orthographic projection of the base substrate 10 is located within the orthographic projection of the first metal substructure 211 and the third metal substructure 213 on the base substrate 10, so that the formation rate of the first structure 21 can be ensured, and the formation of the barrier structure 20 can be ensured. The rate can ensure the yield rate of the organic light emitting display panel.

Moreover, since the first passivation layer 109 is prepared on the side of the first metal layer 107 away from the base substrate 10, the third metal substructure 213 of the formed first structure 21 is formed on the side away from the base substrate 10. The first passivation structure 30, the first passivation structure 30 can enhance the rigidity of the third metal substructure 213, thereby reducing the probability of problems such as fracture and collapse of the third metal substructure 213, thereby ensuring the reliability of the barrier structure 20 properties, ensuring the formation rate of the barrier structure 20 .

Those skilled in the art can understand that the various operations, methods, and steps, measures, and schemes in the processes that have been discussed in this application can be replaced, changed, combined, or deleted. Furthermore, the various operations, methods, and other steps, measures, and schemes in the processes that have been discussed in this application may also be replaced, changed, rearranged, decomposed, combined, or deleted. Further, steps, measures, and schemes in the prior art that have operations, methods, and processes disclosed in the present application may also be alternated, changed, rearranged, decomposed, combined, or deleted.

In the description of this application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", The orientations or positional relationships indicated by "top", "bottom", "inner", "outer", etc. are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the application and simplifying the description, rather than indicating or implying References to devices or elements must have a particular orientation, be constructed, and operate in a particular orientation and therefore should not be construed as limiting the application.

The terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as "first" and "second" may explicitly or implicitly include one or more of these features. In the description of the present application, unless otherwise specified, "plurality" means two or more.

In the description of this application, it should be noted that unless otherwise specified and limited, the terms "installation", "connection", and "connection" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected, or integrally connected; it can be directly connected, or indirectly connected through an intermediary, and it can be the internal communication of two elements. Those of ordinary skill in the art can understand the specific meanings of the above terms in this application in specific situations.

In the description of this specification, specific features, structures, materials or characteristics may be combined in any one or more embodiments or examples in an appropriate manner.

It should be understood that although the various steps in the flow chart of the accompanying drawings are displayed sequentially according to the arrows, these steps are not necessarily executed sequentially in the order indicated by the arrows. Unless otherwise specified herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some of the steps in the flowcharts of the accompanying drawings may include multiple sub-steps or multiple stages, and these sub-steps or stages are not necessarily executed at the same time, but may be executed at different times, and the order of execution is also It is not necessarily performed sequentially, but may be performed alternately or alternately with at least a part of other steps or sub-steps or stages of other steps.

The above descriptions are only some implementations of the present application. It should be pointed out that for those of ordinary skill in the art, some improvements and modifications can be made without departing from the principle of the application. These improvements and modifications are also It should be regarded as the protection scope of this application.

Claims (14)

1. A display panel, comprising a display area and a barrier area, the barrier area surrounding the display area, characterized in that the display panel comprises: Substrate substrate; The barrier structure is located on one side of the base substrate and is located in the barrier region; the barrier structure includes a first structure, and the first structure includes first stacked layers in a direction away from the base substrate. A metal substructure, a second metal substructure, and a third metal substructure; the orthographic projection of the second metal substructure on the base substrate is located between the first metal substructure and the third metal substructure In the orthographic projection of the substrate substrate; The pixel structure is located on one side of the base substrate and is located in the display area. The pixel structure includes a first metal layer, which is arranged on the same layer as the first structure. The material of the first metal layer is the same as that of the first metal layer. The materials of the first structure are the same. 2. The display panel according to claim 1, characterized in that, the boundary of the orthographic projection of the second metal substructure on the base substrate, and the boundary of the first metal substructure on the base substrate The boundary of the orthographic projection has a first set distance. 3. The display panel according to claim 1, wherein the orthographic projection of the first metal substructure on the substrate is the same as the orthographic projection of the third metal substructure on the substrate overlapping. 4. The display panel according to claim 2, wherein the barrier structure further comprises a second structure, the second structure is located on a side of the first structure away from the base substrate, The second structure includes a fourth metal substructure, a fifth metal substructure, and a sixth metal substructure that are sequentially stacked in a direction away from the base substrate; the fifth metal substructure is on the base substrate The orthographic projection of the fourth metal substructure and the sixth metal substructure are located within the orthographic projection of the substrate substrate; and the boundary of the orthographic projection of the fifth metal substructure on the substrate substrate , having a second set distance from the boundary of the orthographic projection of the fourth metal substructure on the base substrate. 5. The display panel according to claim 4, wherein the orthographic projection of the sixth metal substructure on the substrate is the same as the orthographic projection of the fourth metal substructure on the substrate overlapping. 6. The display panel according to claim 4, wherein the pixel structure comprises a second metal layer, which is arranged on the same layer as the second structure, and the material of the second metal layer is the same as that of the second structure of the same material. 7. The display panel according to claim 6, comprising at least one of the following: The first metal layer includes a first metal sub-layer, a second metal sub-layer and a third metal sub-layer sequentially stacked in a direction away from the base substrate; the first metal sub-layer and the third metal sub-layer The materials of the metal sublayers are the same, and the materials of the second metal sublayer are different from the materials of the first metal sublayer and the third metal sublayer; the first metal sublayer and the third metal sublayer The thickness of each layer is not less than 300 microns and not more than 600 microns, and the thickness of the second metal sub-layer is not less than 6000 microns and not more than 6500 microns; The second metal layer includes a fourth metal sublayer, a fifth metal sublayer and a sixth metal sublayer that are sequentially stacked in a direction away from the base substrate; the fourth metal sublayer and the sixth metal sublayer The materials of the metal sublayers are the same, and the material of the fifth metal sublayer is different from the materials of the fourth metal sublayer and the sixth metal sublayer; the fourth metal sublayer and the sixth metal sublayer The thickness of each layer is not less than 300 microns and not more than 600 microns, and the thickness of the fifth metal sub-layer is not less than 6000 microns and not more than 6500 microns. 8. The display panel according to claim 4, wherein the value ranges of the first set distance and the second set distance are not less than 0.3 microns and not more than 0.5 microns. 9. The display panel according to claim 1, wherein the barrier region is provided with at least two barrier structures, and the distance between any two adjacent barrier structures is not less than 8 microns and not greater than 15 microns. 10. The display panel according to claim 4, wherein the orthographic projection of the fifth metal substructure on the substrate is located at the orthographic projection of the second metal substructure on the substrate Inside. 11. The display panel according to claim 4, wherein the orthographic projection of the second metal substructure on the substrate is the same as the orthographic projection of the fifth metal substructure on the substrate overlap. 12. The display panel according to claim 4, further comprising at least one of the following: The first passivation structure is arranged on the side of the third metal substructure away from the base substrate; the orthographic projection of the first passivation structure on the base substrate covers the third metal substructure on the an orthographic projection of the substrate substrate; The second passivation structure is arranged on the side of the sixth metal substructure away from the base substrate; the orthographic projection of the second passivation structure on the base substrate covers the sixth metal substructure on the An orthographic projection of the substrate substrate. 13. The display panel according to claim 12, further comprising: an organic light-emitting layer disposed on a side of the second passivation structure away from the base substrate. 14. A display device, comprising: the display panel according to any one of claims 1-13.

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