CN113451531B - Display panel, preparation method thereof and display device - Google Patents
Display panel, preparation method thereof and display device Download PDFInfo
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- CN113451531B CN113451531B CN202110729219.5A CN202110729219A CN113451531B CN 113451531 B CN113451531 B CN 113451531B CN 202110729219 A CN202110729219 A CN 202110729219A CN 113451531 B CN113451531 B CN 113451531B
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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Abstract
The embodiment of the application provides a display panel, a preparation method of the display panel and display equipment. In the preparation method of the display panel provided by the embodiment of the application, after the first passivation layer and the first metal layer are patterned based on the light resistance structure to obtain the first passivation structure and the first metal structure, the blocking part formed at the end part of the first metal structure is timely stripped, so that the influence of the blocking part on the subsequent etching process of the first metal structure can be avoided, the orthographic projection of the second metal substructure on the substrate in the first structure is ensured, and the blocking part is positioned in the orthographic projection of the first metal substructure and the orthographic projection of the third metal substructure on the substrate, so that the formation rate of the first structure can be ensured, the formation rate of the blocking structure can be further ensured, and the yield of the organic light-emitting display panel can be ensured.
Description
Technical Field
The application relates to the technical field of display, in particular to a display panel, a preparation method of the display panel and display equipment.
Background
With the development of display technology, more and more display products using an organic light emitting display panel are favored by users. For the special-shaped organic light-emitting display panel, because the shape of the light-emitting area is different from that of the traditional rectangular light-emitting area, a blocking structure is required to be arranged to carry out water vapor blocking isolation on the organic light-emitting layer, the cathode and the like so as to ensure the sealing performance of the organic light-emitting display panel.
At present, in the preparation process of the organic light-emitting display panel, the forming rate of the barrier structure is low, so that the yield of the organic light-emitting display panel is low.
Disclosure of Invention
The application provides a display panel, a preparation method thereof and display equipment aiming at the defects of the prior art, and aims to solve the technical problem that the forming rate of a barrier structure is low in the preparation process of an organic light-emitting display panel in the prior art.
In a first aspect, an embodiment of the present application provides a method for manufacturing a display panel, including:
sequentially preparing a first metal layer and a first passivation layer on one side of the substrate base plate positioned in the blocking region;
preparing a light resistance structure on one side of the first passivation layer away from the substrate;
patterning the first passivation layer and the first metal layer based on the light resistance structure to obtain a first passivation structure and a first metal structure, wherein a blocking part is formed at the end part of the first metal structure;
stripping the blocking part and the light resistance structure;
etching the first metal structure to obtain a first structure of the barrier structure, so that orthographic projections of the first metal substructure and the second metal substructure in the first structure on the substrate are positioned in the orthographic projections of the first metal substructure and the third metal substructure on the substrate; the first metal substructure, the second metal substructure, and the third metal substructure are stacked.
In a second aspect, an embodiment of the present application provides a display panel, including a display area and a blocking area, the blocking area surrounding the display area, the display panel including:
a substrate base plate;
the barrier structure is positioned on one side of the substrate and positioned in the barrier area; the blocking structure comprises a first structure, the first structure comprises a first metal substructure, a second metal substructure and a third metal substructure which are sequentially stacked along the direction far away from the substrate base plate, the orthographic projection of the second metal substructure on the substrate base plate is positioned in the orthographic projection of the first metal substructure and the orthographic projection of the third metal substructure on the substrate base plate;
and the first passivation structure is positioned on one side of the barrier structure, which is far away from the substrate base plate.
In a third aspect, an embodiment of the present application provides a display device, including: the display panel provided by the second aspect is described above.
The technical scheme provided by the embodiment of the application brings beneficial technical effects that:
in the preparation method of the display panel provided by the embodiment of the application, after the first passivation layer and the first metal layer are patterned based on the light resistance structure to obtain the first passivation structure and the first metal structure, the blocking part formed at the end part of the first metal structure is timely stripped, so that the influence of the blocking part on the subsequent etching process of the first metal structure can be avoided, the orthographic projection of the second metal substructure on the substrate in the first structure is ensured, and the blocking part is positioned in the orthographic projection of the first metal substructure and the orthographic projection of the third metal substructure on the substrate, so that the formation rate of the first structure can be ensured, the formation rate of the blocking structure can be further ensured, and the yield of the organic light-emitting display panel can be ensured.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
The above and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic flow chart illustrating a method for manufacturing a display panel according to an embodiment of the present disclosure;
fig. 2 is a schematic flow chart of another method for manufacturing a display panel according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram of a second passivation layer on a side thereof away from a substrate after a photoresist structure is formed;
FIG. 4 is a schematic structural view of a barrier formed at the end of the second metal structure and the first metal structure;
FIG. 5 is a schematic view of the structure obtained after stripping the barrier and the photoresist structure;
FIG. 6 is a schematic structural diagram of a barrier structure obtained by etching the second metal structure and the first metal structure;
FIG. 7 is a schematic top view of the structure of FIG. 6 according to an embodiment of the present application;
FIG. 8 is a schematic structural diagram of another barrier structure obtained by etching the second metal structure and the first metal structure;
FIG. 9 is a schematic diagram of the substrate after the photoresist layer on one side of the display region is stripped and the pixel defining structure and the organic light emitting layer are prepared;
fig. 10 is a schematic structural diagram of a display panel according to an embodiment of the present disclosure;
fig. 11 is a schematic structural diagram of another display panel provided in this embodiment of the present application;
fig. 12 is a schematic structural diagram of another display panel according to an embodiment of the present application.
Description of reference numerals:
10-a substrate base plate;
20-a barrier structure; 21-a first structure of barrier structures; 211-a first metal substructure; 212-a second metal substructure; 213-a third metal substructure; 22-a second structure of barrier structures 20; 221-a fourth metal substructure; 222-a fifth metal substructure; 223-a sixth metal substructure;
30-a first passivation structure;
40-a second passivation structure;
60-a barrier;
101-a buffer layer;
102-a first gate insulation layer;
103-a second gate insulation layer;
104-an active layer;
105-a first gate layer;
106-interlayer insulating layer;
107-first metal layer; 1071 — a first metal structure;
108-a first planarization layer;
109-a first passivation layer;
110-a second metal layer; 1101-a second metal structure;
111-a second passivation layer;
112-a second planarization layer;
113-an anode layer;
114-a photoresist layer; 1141-a photoresist structure;
115-a second gate layer;
116-pixel definition structure;
117 — an organic light emitting layer;
201-a display area; 202-barrier region.
Detailed Description
The present application is described in detail below and examples of embodiments of the present application are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements with the same or similar functionality throughout. In addition, if a detailed description of the known art is not necessary for illustrating the features of the present application, it is omitted. The embodiments described below with reference to the accompanying drawings are exemplary only for explaining the present application and are not construed as limiting the present application.
It will be understood by those within the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. It will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. As used herein, the term "and/or" includes all or any element and all combinations of one or more of the associated listed items.
The inventor of the application researches and discovers that for the special-shaped organic light-emitting display panel, as the shape of the light-emitting area is different from that of the traditional rectangular light-emitting area, a blocking structure is required to be arranged to block and isolate water vapor of the organic light-emitting layer, the cathode and the like, so that the sealing performance of the organic light-emitting display panel is guaranteed. At present, the cross section of the barrier structure is mostly in an I shape, and in the preparation process of the organic light-emitting display panel, the I-shaped barrier structure is formed by an etching process and by utilizing the difference of etching rates of different metal materials to etching liquid. However, in the preparation process of the barrier structure, two by-products such as the barrier portion and the like are easily generated in the barrier structure, so that the etching liquid is difficult to directly contact the metal material of the barrier structure, the formation rate of the i-shaped barrier structure is low, and the yield of the organic light-emitting display panel is low.
In addition, the existing i-shaped blocking structure is usually of a single-layer metal structure on the side away from the substrate base plate, and in the subsequent preparation process of the organic light-emitting display panel, the single-layer metal structure is prone to fracture, collapse and other problems, so that the i-shaped blocking structure loses the blocking effect, and the formation rate of the i-shaped blocking structure is further reduced.
The application provides a display panel, a preparation method thereof and display equipment, and aims to solve the technical problems in the prior art.
The following describes the technical solutions of the present application and how to solve the above technical problems with specific embodiments.
The embodiment of the application provides a preparation method of a display panel, and the flow schematic diagram of the preparation method is shown in fig. 1, and the preparation method comprises steps S101 to S105:
s101, sequentially preparing a first metal layer 107 and a first passivation layer 109 on one side of the substrate base plate 10, which is located in the blocking area 202.
S102, preparing a light resistance structure 1141 on one side of the first passivation layer 109, which is far away from the substrate base plate 10;
s103, patterning the first passivation layer 109 and the first metal layer 107 based on the photoresist structure 1141 to obtain a first passivation structure and a first metal structure, wherein a barrier is formed at an end of the first metal structure.
S104, the lift-off barrier 60, and the photoresist structure 1141.
S105, etching the first metal structure to obtain the first structure 21 of the barrier structure 20, so that the orthographic projection of the second metal substructure 212 in the first structure 21 on the substrate 10 is located in the orthographic projection of the first metal substructure 211 and the third metal substructure 213 on the substrate 10; the first metal sub-structure 211, the second metal sub-structure 212 and the third metal sub-structure 213 are stacked.
In the preparation method of the display panel provided in the embodiment of the present application, after the first passivation layer 109 and the first metal layer 107 are patterned based on the photoresist structure 1141 to obtain the first passivation structure 30 and the first metal structure 1071, the blocking portion 60 formed at the end of the first metal structure 1071 is timely stripped, so that the influence of the blocking portion 60 on the subsequent etching process of the first metal structure 1071 can be avoided, and the orthographic projection of the second metal substructure 212 in the first structure 21 on the substrate base plate 10 is ensured, and the blocking portion is located in the orthographic projection of the first metal substructure 211 and the third metal substructure 213 on the substrate base plate 10, so that the formation rate of the first structure 21 can be ensured, and further the formation rate of the blocking structure 20 can be ensured, and the yield of the organic light emitting display panel can be ensured.
Moreover, since the first passivation layer 109 is prepared on the side of the first metal layer 107 away from the substrate 10, the first passivation structure 30 is formed on the side of the third metal substructure 213 of the formed first structure 21 away from the substrate 10, and the first passivation structure 30 can enhance the rigidity of the third metal substructure 213, so as to reduce the probability of the third metal substructure 213 breaking, collapsing, and the like, thereby ensuring the reliability of the barrier structure 20 and the formation rate of the barrier structure 20.
In an embodiment of the application, the step S105 specifically includes: the first metal sublayer, the second metal sublayer and the third metal sublayer of the first metal structure are etched to form a first metal substructure 211, a second metal substructure 212 and a third metal substructure 213 of the first structure 21, until a boundary of the orthographic projection of the second metal substructure 212 on the substrate 10 has a first set distance d1 from a boundary of the orthographic projection of the first metal substructure 211 and the orthographic projection of the third metal substructure 213 on the substrate 10.
In the embodiment of the present application, by limiting the boundary of the orthographic projection of the second metal substructure 212 on the substrate 10, the first set distance d1 is provided between the boundary of the orthographic projection of the first metal substructure 211 and the orthographic projection of the third metal substructure 213 on the substrate 10, so that the requirement for the barrier structure to be obtained is met, the performance of the barrier structure is ensured, the formation rate of the barrier structure can be further ensured, and the yield of the organic light emitting display panel can be ensured.
The embodiment of the application provides another preparation method of a display panel, and a flow schematic diagram of the preparation method is shown in fig. 2, and the preparation method comprises steps S201 to S205:
s201, preparing a first metal layer 107 and a first passivation layer 109 in sequence on one side of the substrate base plate 10, which is located in the blocking area 202.
In some possible embodiments, the first metal layer 107 and the first passivation layer 109 are sequentially prepared on the side of the substrate base plate 10 located at the blocking region 202. Optionally, the first metal layer 107 includes at least three metal sublayers arranged in a stacked manner, and the metal sublayers are made of different metal materials, and in a subsequent preparation process, the i-shaped barrier structure 20 is formed by using the difference between the etching rates of the different metal materials to the etching solution. Optionally, in this embodiment of the application, the first metal layer 107 includes three metal sublayers that are stacked, and an etching rate of the metal sublayer sandwiched between the upper and lower metal sublayers is greater than an etching rate of the upper and lower metal sublayers. Optionally, the upper and lower metal sublayers are made of Ti (titanium), and the metal sublayer sandwiched between the upper and lower metal sublayers is made of Al (aluminum).
In some possible embodiments, the first metal layer 107 and the first passivation layer 109 may be prepared simultaneously with the relevant film layers of the pixel structure located in the display region 201. Therefore, the preparation process of the barrier structure 20 can be simplified, the preparation difficulty of the barrier structure 20 is reduced, and the preparation cost of the barrier structure 20 is reduced, so that the preparation cost of the display panel is reduced. Optionally, in this embodiment, the first metal layer 107 located in the blocking region 202 and the first metal layer 107 located in the display region 201 are simultaneously prepared, and the first passivation layer 109 located in the blocking region 202 and the first passivation layer 109 located in the display region 201 are simultaneously prepared.
Optionally, before the first metal layer 107 and the first passivation layer 109 are sequentially prepared on the side of the substrate base plate 10 located in the blocking region 202, the method further includes: the interlayer insulating layer 106 is formed on the substrate 10 on the side of the barrier region 202, and the interlayer insulating layer 106 in the barrier region 202 and the interlayer insulating layer 106 in the display region 201 are formed at the same time. Then, a first metal layer 107 and a first passivation layer 109 are sequentially formed on the side of the interlayer insulating layer 106 away from the base substrate 10.
S202, preparing a second metal layer 110 and a second passivation layer 111 on the side, away from the substrate base plate 10, of the first passivation layer 109 in sequence.
In some possible embodiments, the second metal layer 110 and the second passivation layer 111 are sequentially prepared on the side of the first passivation layer 109 away from the substrate base plate 10. Optionally, the second metal layer 110 includes at least three metal sublayers stacked together, and the metal sublayers are made of different metal materials, and in a subsequent preparation process, the i-shaped barrier structure 20 is formed by using the difference between the etching rates of the different metal materials to the etching solution. Optionally, in this embodiment of the application, the second metal layer 110 includes three metal sublayers that are stacked, and an etching rate of the metal sublayer sandwiched between the upper and lower metal sublayers is greater than an etching rate of the upper and lower metal sublayers. Optionally, the upper and lower metal sublayers are made of Ti (titanium), and the metal sublayer sandwiched between the upper and lower metal sublayers is made of Al (aluminum).
In some possible embodiments, the second metal layer 110 and the second passivation layer 111 may be simultaneously prepared with the relevant film layers of the pixel structure located in the display region 201. Therefore, the preparation process of the barrier structure 20 can be further simplified, the preparation difficulty of the barrier structure 20 is further reduced, and the preparation cost of the barrier structure 20 is further reduced, so that the preparation cost of the display panel is further reduced. Optionally, in this embodiment of the application, the second metal layer 110 located in the blocking region 202 and the second metal layer 110 located in the display region 201 are simultaneously prepared, and the second passivation layer 111 located in the blocking region 202 and the second passivation layer 111 located in the display region 201 are simultaneously prepared.
S203, preparing a photoresist structure 1141 on the side of the second passivation layer 111 far away from the substrate base plate 10.
In some possible embodiments, a photoresist structure 1141 is prepared on a side of the second passivation layer 111 located at the portion of the blocking region 202 away from the substrate base plate 10, as shown in fig. 3. Alternatively, the photoresist layer 114 for preparing the photoresist structure 1141 may be prepared simultaneously with the photoresist layer 114 for the pixel structure in the display region 201. In the embodiment of the present application, two photoresist structures 1141 are formed on the side of the second passivation layer 111 away from the substrate 10.
It should be noted that, as shown in fig. 3, the region for preparing the pixel structure is a display region 201, and the region for preparing the barrier structure 20 is a barrier region 202.
S204, patterning the second passivation layer 111, the second metal layer 110, the first passivation layer 109 and the first metal layer 107 based on the photoresist structure 1141, to obtain a second passivation structure 40, a second metal structure 1101, a first passivation structure 30 and a first metal structure 1071, wherein the end portions of the second metal structure 1101 and the first metal structure 1071 are formed with the blocking portion 60.
In some possible embodiments, the second passivation layer 111, the second metal layer 110, the first passivation layer 109 and the first metal layer 107 are patterned based on the two photoresist structures 1141, resulting in two second passivation structures 40, two second metal structures 1101, two first passivation structures 30 and two first metal structures 1071, and the end portions of the two second metal structures 1101 and the two first metal structures 1071 are formed with the blocking portions 60, as shown in fig. 4.
Alternatively, CF is used based on two photoresist structures 1141 4 (carbon tetrafluoride) and O 2 Dry etching the second passivation layer 111 in a combined atmosphere of (oxygen), so that the second passivation structure 40 is formed after patterning the second passivation layer 111; continued use of BCl 3 (boron trichloride) and Cl 2 The second metal layer 110 is dry etched in a combined atmosphere of (chlorine gas), so that the second metal layer 110 is patterned to form the second metal structure 1101, and during the dry etching, the barrier portions 60 are formed at two end portions of the second metal structure 1101. Using a CF 4 (carbon tetrafluoride) and O 2 Dry etching the first passivation layer 109 in a combined atmosphere of (oxygen), so that the first passivation structure 30 is formed after patterning the first passivation layer 109; continued use of BCl 3 (boron trichloride) and Cl 2 The first metal layer 107 is dry etched in a combined atmosphere of (chlorine gas) so that the first metal layer 107 is patterned to form the first metal structure 1071, and during the dry etching, the barrier portions 60 are formed at both end portions of the first metal structure 1071.
It should be noted that, in the preparation process of the display panel, since the first metal layer 107 located in the blocking region 202 and the first metal layer 107 located in the display region 201 are simultaneously prepared, and the patterning process is performed on the first metal layer 107 located in the display region 201, the patterning process may be performed on the first metal layer 107 located in the blocking region 202 during the patterning process performed on the first metal layer 107 located in the display region 201, so that the process step of patterning the first metal layer 107 based on the photoresist structure 1141 may be omitted in step S204. The preparation process of the barrier structure 20 can be further simplified, the preparation difficulty of the barrier structure 20 is further reduced, and the preparation cost of the barrier structure 20 is further reduced, so that the preparation cost of the display panel is further reduced.
Optionally, the thickness of the photoresist structure 1141 is not less than 1.5 microns and not more than 1.8 microns
S205, lift-off barrier 60, and photoresist structure 1141.
In some possible embodiments, the barrier portions 60 at the two ends of the second metal structure 1101, the barrier portions 60 at the two ends of the first metal structure 1071, and the photoresist structure 1141 at the side of the second passivation layer 111 away from the substrate 10 are stripped by a wet stripping process, resulting in the structure shown in fig. 5.
S206, etching the first metal structure 1071 and the second metal structure 1101 to obtain a first structure 21 and a second structure 22 of the barrier structure 20, respectively, so that the orthographic projection of the fifth metal substructure 222 in the second structure 22 on the substrate 10 is located in the orthographic projection of the fourth metal substructure 221 and the sixth metal substructure 223 on the substrate 10; and the orthographic projection of the second metal substructure 212 in the first structure 21 on the substrate base plate 10 is positioned within the orthographic projection of the first metal substructure 211 and the third metal substructure 213 on the substrate base plate 10.
Optionally, the fourth metal sub-structure 221, the fifth metal sub-structure 222 and the sixth metal sub-structure 223 are stacked. Optionally, the first metal sub-structure 211, the second metal sub-structure 212 and the third metal sub-structure 213 are stacked.
In some possible embodiments, the structure shown in fig. 5 is etched with an etching solution, and due to the difference in etching rate of the etching solution for each layer of metal material in the second metal structure 1101, the orthogonal projection of the fifth metal substructure 222 in the second structure 22 on the substrate 10 is located in the orthogonal projection of the fourth metal substructure 221 and the sixth metal substructure 223 on the substrate 10, that is, the end of the fifth metal substructure 222 is recessed relative to both the fourth metal substructure 221 and the sixth metal substructure 223.
Similarly, the orthographic projection of the second metal substructure 212 in the first structure 21 on the substrate base plate 10 is located in the orthographic projection of the first metal substructure 211 and the third metal substructure 213 on the substrate base plate 10, that is, the end of the second metal substructure 212 is retracted relative to both the first metal substructure 211 and the third metal substructure 213, as shown in fig. 6.
In the embodiment of the application, the etching solution comprises CH 3 COOH、HNO 3 And H 3 PO 4 And CH 3 The content of COOH is not less than 10% and not more than 20%; HNO 3 The content of (A) is not less than 1% and not more than 2.5%; h 3 PO 4 Is not less than 50% and not more than 60%.
Optionally, in fig. 6, the blocking region 202 of the display panel is provided with two blocking structures 20, and each blocking structure 20 includes two i-shaped structures stacked up and down, so that the blocking structure 20 is a dual i-shaped structure, the blocking performance of the blocking structure 20 can be improved, and the reliability of the display panel is improved.
Alternatively, as shown in fig. 7, the display panel includes a display area 201 and a blocking area 202 surrounding the display area 201, and two blocking structures 20 are disposed in the blocking area 202. It should be noted that in the embodiment of the present application, the orthographic projection of the second metal substructure 212 on the substrate base plate 10 overlaps with the orthographic projection of the fifth metal substructure 222 on the substrate base plate 10, and therefore, only two dotted lines are used to represent the second metal substructure 212 and the fifth metal substructure 222 in fig. 7.
In the embodiment of the present application, since the first passivation layer 109 is prepared on the side of the first metal layer 107 away from the substrate 10, so that the first passivation structure 30 is formed on the side of the third metal substructure 213 of the formed first structure 21 away from the substrate 10, the first passivation structure 30 can enhance the rigidity of the third metal substructure 213, thereby reducing the probability of the third metal substructure 213 breaking, collapsing and other problems; similarly, the second passivation structure 40 is formed on the side of the sixth metal substructure 223 far from the substrate base plate 10 in the second structure 22, and the second passivation structure 40 can enhance the rigidity of the sixth metal substructure 223, so that the probability of the sixth metal substructure 223 breaking, collapsing and the like can be reduced, the reliability of the barrier structure 20 can be ensured, and the formation rate of the barrier structure 20 can be ensured.
In an embodiment of the present application, the second metal structure 1101 is etched to obtain the second structure 22 of the barrier structure 20, so that an orthogonal projection of the fifth metal substructure 222 in the second structure 22 on the substrate 10 is located in an orthogonal projection of the fourth metal substructure 221 and the sixth metal substructure 223 on the substrate 10; the fourth metal sub-structure 221, the fifth metal sub-structure 222, and the sixth metal sub-structure 223 are stacked, and include:
etching the fourth metal sublayer, the fifth metal sublayer and the sixth metal sublayer of the second metal structure 1101 to form the fourth metal substructure 221, the fifth metal substructure 222 and the sixth metal substructure 223 of the second structure 22, until the boundary of the orthographic projection of the fifth metal substructure 222 on the substrate base plate 10 has a second set distance d2 from the boundary of the orthographic projection of the fourth metal substructure 221 and the sixth metal substructure 223 on the substrate base plate 10.
In the embodiment of the present application, the boundary of the orthographic projection of the fifth metal substructure 222 on the substrate 10 is limited, and the second set distance d2 is provided between the boundary of the orthographic projection of the fourth metal substructure 221 and the orthographic projection of the sixth metal substructure 223 on the substrate 10, so that the requirement of the barrier structure 20 to be obtained is met, the performance of the barrier structure 20 is ensured, the formation rate of the barrier structure 20 can be further ensured, and the yield of the organic light emitting display panel can be ensured.
It should be noted that, in the direction perpendicular to the substrate base plate 10, due to the difference in height between the first metal structure 1071 and the second metal structure 1101, during wet etching, in the process of flowing the etching liquid from top to bottom, the flow rate of the etching liquid contacting the second metal structure 1101 located above the first metal structure 1071 is faster, and therefore the etching degree of the second metal structure 1101 is greater than that of the first metal structure 1071. So that the second set distance d2 in the second structure 22 is formed to be greater than the first set distance d1 in the first structure 21, as shown in fig. 8.
In one embodiment of the present application, preparing the photoresist structure 1141 on the side of the first passivation layer 109 away from the substrate 10 includes:
preparing a photoresist layer 114 on a side of the first passivation layer 109 away from the substrate 10, so that the photoresist layer 114 covers the quasi-pixel structure of the substrate 10 on the side of the display region 201; the photoresist layer 114 is patterned such that the portion of the photoresist layer 114 in the isolation region 202 forms a photoresist structure 1141.
Optionally, a photoresist layer 114 is prepared on a side of the second passivation layer 111 away from the substrate 10, so that the photoresist layer 114 covers the quasi-pixel structure of the substrate 10 on the side of the display region 201, specifically, the photoresist layer 114 covers the anode layer 113 of the quasi-pixel structure, the second passivation layer 111, and end portions of the film layers of the quasi-pixel structure, thereby preventing the preparation process of the blocking structure 20 from affecting the quasi-pixel structure; the photoresist layer 114 is patterned such that the portion of the photoresist layer 114 in the isolation region 202 forms a photoresist structure 1141.
In some possible embodiments, as shown in fig. 3 to 9, the quasi-pixel structure of the substrate 10 on the side of the display area 201 includes: an active layer 104, a first gate layer 105, an interlayer insulating layer 106, a first metal layer 107, a first planarization layer 108, a first passivation layer 109, a second metal layer 110, a second passivation layer 111, a second planarization layer 112, an anode layer 113, a photoresist layer 114, and a second gate layer 115 on a side of the second gate insulating layer 103 away from the substrate 10. The base substrate 10 is also provided at one side thereof with a buffer layer 101, a first gate insulating layer 102, and a second gate insulating layer 103.
In some possible embodiments, the process for preparing the quasi-pixel structure of the substrate 10 on the side of the display area 201 includes:
depositing and preparing a buffer layer 101 on one side of a substrate base plate 10, wherein the preparation material of the buffer layer 101 comprises silicon nitride, silicon oxide and the like, wherein the thickness of the silicon nitride is not less than 0.3 micrometer and not more than 0.7 micrometer; the thickness of the silicon oxide is not less than 1 micrometer and not more than 1.2 micrometers. Depositing and preparing an active layer 104 on one side of the buffer layer 101, which is positioned in the display area 201, wherein the preparation material of the active layer 104 is amorphous silicon, the thickness of the active layer 104 is 0.05 microns, and performing dehydrogenation treatment on the active layer 104, wherein the temperature of the dehydrogenation treatment is not less than 300 ℃ and not more than 350 ℃; then, ELA (Excimer Laser Annealing) processing is performed on the active layer 104, so that part of amorphous silicon in the active layer 104 is converted into polysilicon; then dry etching to treat the active layerLayer 104, specifically, using CF 4 (carbon tetrafluoride) and O 2 And (oxygen) dry etching the active layer 104 in a combined atmosphere, then carrying out wet stripping to complete patterning of the active layer 104, forming a non-capacitance area mask, and carrying out ion implantation to convert the polysilicon doping conductor in the capacitance area into a conductor, wherein the doping can be performed by using phosphine or borane.
Depositing and preparing a first gate insulating layer 102 on one side of the patterned active layer 104, wherein the first gate insulating layer 102 is made of silicon nitride and silicon oxide, and the thickness of the silicon nitride is not less than 0.05 micrometer and not more than 0.09 micrometer; the thickness of the silicon oxide is not less than 0.03 micrometer and not more than 0.06 micrometer.
Depositing a gate metal layer on one side of the first gate insulating layer 102, and then patterning the gate metal layer, specifically, using SF 6 (Sulfur hexafluoride) and O 2 Dry etching is carried out on the grid metal layer under the combined atmosphere of (oxygen) to complete the patterning of the grid metal layer; alternatively, using high flow rates of CF 4 (carbon tetrafluoride) and low flow rate of O 2 (oxygen) combined atmosphere, optionally CF 4 The flow rate of (A) is 2000 to 2500sccm (Standard Cubic Centimeter per Minute) O 2 The flow rate of the (oxygen) gas is 1000 to 1500sccm, CF 4 Flow rate of (A) and (B) 2 The flow rates of (a) each include the end of the respective range. And completing the patterning of the gate metal layer, so that the first gate layer 105 is deposited and prepared on one side of the display area 201, the material for manufacturing the first gate layer 105 comprises molybdenum metal, and the thickness of the first gate layer 105 is not less than 0.25 micrometer and not more than 0.3 micrometer.
The second gate insulating layer 103 is deposited and prepared on one side of the first gate layer 105, and then the second gate layer 115 is prepared on one side of the second gate insulating layer 103 by using the same preparation process as that of the first gate layer 105.
Depositing and preparing an interlayer insulating layer 106 on one side of the second gate layer 115, wherein optionally, the manufacturing material of the interlayer insulating layer 106 comprises silicon nitride and silicon oxide, and the thickness of the silicon nitride is not less than 0.2 micrometer and not more than 0.3 micrometer; the thickness of the silicon oxide is not less than 0.2 micrometer and not more than 0.5 micrometer. Then by photolithographyThe via hole is formed so that at least a portion of the active layer 104 is exposed, and particularly, CF may be used 4 (carbon tetrafluoride) and O 2 The combined atmosphere of (oxygen) dry etches the interlayer insulating layer 106, the second gate insulating layer 103, and the first gate insulating layer 102, forming via holes such that at least a portion of the active layer 104 is exposed.
Depositing and preparing a first metal layer 107 on one side of the interlayer insulating layer 106, in the embodiment of the present application, the first metal layer 107 is a Ti (titanium)/Al (aluminum)/Ti (titanium) film structure, and the thickness of Ti (titanium) is not less than 300 micrometers and not more than 600 micrometers; the thickness of Al (aluminum) is not less than 6000 microns and not more than 6500 microns. Optionally, BCl is employed 3 (boron trichloride) and Cl 2 The first metal layer 107 is dry etched in a combined atmosphere of (chlorine gas) to achieve patterning of the first metal layer 107.
And preparing a first planarization layer 108 on one side of the first metal layer 107 by adopting the processes of coating, exposing, developing, post-baking and the like, wherein the thickness of the first planarization layer 108 is not less than 1.5 micrometers and not more than 2 micrometers. Then, a via hole is opened in a portion of the first planarization layer 108 corresponding to the source region of the active layer 104. Depositing and preparing a first passivation layer 109 on one side of the first planarization layer 108, wherein the manufacturing material of the first passivation layer 109 comprises silicon nitride, and then performing dry etching to form a via hole in the first passivation layer 109 in a region corresponding to the via hole of the first planarization layer 108.
Depositing and preparing a second metal layer 110 on one side of the interlayer insulating layer 106, in the embodiment of the application, the second metal layer 110 is a Ti (titanium)/Al (aluminum)/Ti (titanium) film layer structure, and the thickness of Ti (titanium) is not less than 300 micrometers and not more than 600 micrometers; the thickness of Al (aluminum) is not less than 6000 microns and not more than 6500 microns. Optionally, BCl is employed 3 (boron trichloride) and Cl 2 A combined atmosphere of (chlorine gas) dry-etches the second metal layer 110 to achieve patterning of the second metal layer 110.
A second passivation layer 111 is formed on one side of the second metal layer 110, and the second passivation layer 111 is made of a material including silicon nitride. And preparing a second planarization layer 112 on one side of the second passivation layer 111 by adopting the processes of coating, exposing, developing, post-baking and the like, wherein the thickness of the second planarization layer 112 is not less than 1.5 micrometers and not more than 2 micrometers. Then, a via hole is opened in a portion of the second planarization layer 112 corresponding to the source region of the active layer 104.
The anode layer 113 is prepared on one side of the second planarization layer 112 such that at least a portion of the anode layer 113 is connected to the first metal layer 107 through a via hole. Then, a photoresist layer 114 is formed on one side of the anode layer 113, such that the photoresist layer 114 covers the anode layer 113 of the quasi-pixel structure, the second passivation layer 111, and the end portions of the film layers of the quasi-pixel structure, thereby preventing the manufacturing process of the barrier structure 20 from affecting the quasi-pixel structure
After the barrier structure 20 in the barrier region 202 is prepared, the photoresist layer 114 in the display region 201 is stripped off, and then a pixel definition structure 116 is prepared on one side of the anode layer 113 by using coating, exposing, developing, post-baking, and the like. The organic light emitting layer 117 is deposited on one side of the pixel defining structure 116, as shown in fig. 9, so that the organic light emitting layer 117 is blocked due to the blocking of the blocking structure 20. In the embodiment of the present application, the thickness of the pixel defining structure 116 is not less than 1.4 micrometers and not more than 1.8 micrometers.
Based on the same inventive concept, the embodiment of the present application provides a display panel, which includes a display area 201 and a blocking area 201, wherein the blocking area 201 surrounds the display area 201. Fig. 10 shows a schematic structural diagram of the display panel, where the display panel includes: a substrate base plate 10, a barrier structure 20 and a first passivation structure 30.
The barrier structure 20 is positioned on one side of the substrate base plate 1 and positioned in the barrier region 102; the barrier structure 20 comprises a first structure 21, the first structure 21 comprises a first metal substructure 211, a second metal substructure 212 and a third metal substructure 213 which are sequentially stacked along a direction away from the substrate 10, and an orthographic projection of the second metal substructure 212 on the substrate 10 is located in the orthographic projection of the first metal substructure 211 and the third metal substructure 213 on the substrate 10; and the first passivation structure 30 is located on a side of the barrier structure 20 away from the substrate 10.
In the embodiment of the present application, the display panel includes a display area 201 and a blocking area 201 adjacent to the display area 201. As shown in fig. 7, the blocking region 201 is provided with one blocking structure 20, and the blocking structure 20 includes a first metal sub-structure 211, a second metal sub-structure 212 and a third metal sub-structure 213 which are stacked, and a cross-sectional shape of the blocking structure 20 is an i shape in a direction perpendicular to a cross-sectional direction of the display panel.
In this application embodiment, set up the cross sectional shape through with separation structure 20 into the I-shaped, can improve separation structure 20's separation performance, improved display panel's reliability.
In one embodiment of the present application, the boundary of the orthographic projection of the second metal substructure 212 on the substrate base plate 10 has a first set distance d1 from the boundary of the orthographic projection of the first metal substructure 211 on the substrate base plate 10. The barrier structure prepared by the method meets the requirements to ensure the performance of the barrier structure, so that the formation rate of the barrier structure can be further ensured, and the yield of the organic light-emitting display panel can be ensured.
Optionally, an orthogonal projection of the first passivation structure 30 on the substrate base 10 covers an orthogonal projection of the third metal sub-structure 213 on the substrate base 10. Thereby ensuring that the first passivation structure 30 can completely cover the third metal substructure 213 to enhance the rigidity of the third metal substructure 213, and thus reducing the probability of the third metal substructure 213 breaking, collapsing, and the like, thereby ensuring the reliability of the barrier structure 20 and the formation rate of the barrier structure 20.
In one embodiment of the present application, the orthographic projection of the first metal substructure 211 on the substrate base 10 overlaps with the orthographic projection of the third metal substructure 213 on the substrate base 10. That is, the boundary of the orthographic projection of the second metal substructure 212 on the substrate base plate 10 and the boundary of the orthographic projection of the third metal substructure 213 on the substrate base plate 10 have the first set distance d1.
In one embodiment of the present application, as shown in fig. 11, the barrier structure 20 further includes a second structure 22, the second structure 22 is located on a side of the first structure 21 away from the substrate 10, and a second passivation structure 40 is located on a side of the second structure 22 away from the substrate 10 and provided with the second passivation structure 40; the second structure 22 includes a fourth metal substructure 221, a fifth metal substructure 222, and a sixth metal substructure 223, which are sequentially stacked along a direction away from the substrate 10, wherein an orthogonal projection of the fifth metal substructure 222 on the substrate 10 is located in an orthogonal projection of the fourth metal substructure 221 on the substrate 10.
Optionally, the boundary of the orthographic projection of the fifth metal substructure 222 on the substrate base plate 10 has a second set distance d2 from the boundary of the orthographic projection of the fourth metal substructure 221 on the substrate base plate 10. The prepared barrier structure meets the requirements to ensure the performance of the barrier structure, so that the formation rate of the barrier structure can be further ensured, and the yield of the organic light-emitting display panel can be ensured.
Optionally, an orthogonal projection of the sixth metal sub-structure 223 on the substrate 10 overlaps with an orthogonal projection of the fourth metal sub-structure 221 on the substrate 10. That is, the boundary of the orthographic projection of the fifth metal substructure 222 on the substrate 10 and the boundary of the orthographic projection of the sixth metal substructure 223 on the substrate 10 have a second set distance d2.
Optionally, an orthographic projection of the second passivation structure 40 on the substrate base 10 covers an orthographic projection of the sixth metal sub-structure 223 on the substrate base 10. Therefore, the second passivation structure 40 can completely cover the sixth metal substructure 223, so as to enhance the rigidity of the sixth metal substructure 223, and thus the probability of the sixth metal substructure 223 breaking, collapsing and the like can be reduced, thereby ensuring the reliability of the barrier structure 20 and the formation rate of the barrier structure 20.
In one embodiment of the present application, the orthographic projection of the fifth metal sub-structure 222 on the substrate base plate 10 is located within the orthographic projection of the second metal sub-structure 212 on the substrate base plate 10.
In one embodiment of the present application, an organic light emitting layer 117 is disposed on a side of the second passivation structure 40 away from the base substrate 10. As previously known, when the organic light emitting layer 117 is deposited on one side of the pixel defining structure 116, the organic light emitting layer 117 is also formed on the side of the second passivation structure 40 away from the substrate 10 in the blocking structure 20 of the blocking region 202, and due to the blocking of the blocking structure 20, the portion of the organic light emitting layer 117 located in the display region 201 and the portion located in the blocking region 202 are blocked, as shown in fig. 9. The portion of the organic light emitting layer 117 located in the display region 201 is in contact with the anode layer 113, and the portion of the organic light emitting layer 117 can emit light normally during the operation of the display panel.
In one embodiment of the present application, the first set distance d1 and the second set distance d2 both range from 0.3 to 0.5 μm. It should be noted that the values of the first set distance d1 and the second set distance d2 include end values of 0.3 micrometers and 0.5 micrometers.
In one embodiment of the present application, the barrier region 202 may be provided with a plurality of barrier structures 20, and the distance d3 between two adjacent barrier structures 20 is 8-15 micrometers. It should be noted that the distance d3 between two adjacent barrier structures 20 is equal to or greater than 8 microns and 15 microns. Alternatively, as shown in fig. 12, the barrier region 202 may be provided with two barrier structures 20.
Based on the same inventive concept, an embodiment of the present application provides a display device, including: the above embodiments provide a display panel, or, include: the display panel prepared by the preparation method of the display panel provided by each embodiment is adopted.
By applying the embodiment of the application, at least the following beneficial effects can be realized:
in the preparation method of the display panel provided in the embodiment of the present application, after the first passivation layer 109 and the first metal layer 107 are patterned based on the photoresist structure 1141 to obtain the first passivation structure 30 and the first metal structure 1071, the blocking portion 60 formed at the end of the first metal structure 1071 is timely peeled off, so that the influence of the blocking portion 60 on the subsequent etching process of the first metal structure 1071 can be avoided, and the orthographic projection of the second metal substructure 212 in the first structure 21 on the substrate 10 is ensured and is located in the orthographic projection of the first metal substructure 211 and the third metal substructure 213 on the substrate 10, thereby ensuring the formation rate of the first structure 21, further ensuring the formation rate of the blocking structure 20, and ensuring the yield of the organic light-emitting display panel.
Moreover, since the first passivation layer 109 is prepared on the side of the first metal layer 107 away from the substrate 10, the first passivation structure 30 is formed on the side of the third metal substructure 213 of the formed first structure 21 away from the substrate 10, and the first passivation structure 30 can enhance the rigidity of the third metal substructure 213, so as to reduce the probability of the third metal substructure 213 breaking, collapsing, and the like, thereby ensuring the reliability of the barrier structure 20 and the formation rate of the barrier structure 20.
Those of skill in the art will appreciate that the various operations, methods, steps in the processes, acts, or solutions discussed in this application can be interchanged, modified, combined, or eliminated. Further, other steps, measures, or schemes in various operations, methods, or flows that have been discussed in this application can be alternated, altered, rearranged, broken down, combined, or deleted. Further, steps, measures, schemes in the prior art having various operations, methods, procedures disclosed in the present application may also be alternated, modified, rearranged, decomposed, combined, or deleted.
In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a particular orientation, be constructed in a particular orientation, and be operated, and thus should not be construed as limiting the present application.
The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless otherwise specified.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
In the description herein, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
It should be understood that, although the steps in the flowcharts of the figures are shown in order as indicated by the arrows, the steps are not necessarily performed in order as indicated by the arrows. The steps are not performed in the exact order shown and may be performed in other orders unless explicitly stated herein. Moreover, at least a portion of the steps in the flow chart of the figure may include multiple sub-steps or multiple stages, which are not necessarily performed at the same time, but may be performed at different times, which are not necessarily performed in sequence, but may be performed alternately or alternately with other steps or at least a portion of the sub-steps or stages of other steps.
The foregoing is only a partial embodiment of the present application, and it should be noted that, for those skilled in the art, several modifications and decorations can be made without departing from the principle of the present application, and these modifications and decorations should also be regarded as the protection scope of the present application.
Claims (15)
1. A method for manufacturing a display panel, comprising:
sequentially preparing a first metal layer and a first passivation layer on one side of the substrate base plate positioned in the blocking region;
preparing a light resistance structure on one side of the first passivation layer far away from the substrate base plate;
patterning the first passivation layer and the first metal layer based on the light resistance structure to obtain a first passivation structure and a first metal structure, wherein a barrier part is formed at the end part of the first metal structure;
stripping the barrier part and the light resistance structure;
etching the first metal structure to obtain a first structure of the barrier structure, so that the orthographic projections of the second metal substructure in the first structure on the substrate are positioned in the orthographic projections of the first metal substructure and the third metal substructure on the substrate; the first metal sub-structure, the second metal sub-structure, and the third metal sub-structure are stacked.
2. The method for manufacturing a display panel according to claim 1, wherein the manufacturing of the photoresist structure on the side of the first passivation layer away from the substrate base plate comprises:
sequentially preparing a second metal layer and a second passivation layer on one side of the first passivation layer, which is far away from the substrate base plate;
and preparing the light resistance structure on one side of the second passivation layer far away from the substrate.
3. The method according to claim 2, wherein the patterning the first passivation layer and the first metal layer based on the photoresist structure to obtain a first passivation structure and a first metal structure, and a barrier is formed at an end of the first metal structure, and the method comprises:
patterning the second passivation layer, the second metal layer, the first passivation layer and the first metal layer based on the photoresist structure to obtain a second passivation structure, a second metal structure, the first passivation structure and the first metal structure, wherein blocking parts are formed at the end parts of the second metal structure and the first metal structure.
4. The method according to claim 3, wherein the patterning of the first metal structure results in a first structure of barrier structures, further comprising:
etching the second metal structure to obtain a second structure of the barrier structure, so that the orthographic projections of the fifth metal substructure and the fifth metal substructure in the second structure on the substrate are positioned in the orthographic projections of the fourth metal substructure and the sixth metal substructure on the substrate; the fourth metal sub-structure, the fifth metal sub-structure, and the sixth metal sub-structure are stacked.
5. The method according to claim 4, wherein the etching the second metal structure to obtain the second structure of the barrier structure, such that an orthogonal projection of the fifth metal substructure in the second structure on the substrate is located in an orthogonal projection of the fourth metal substructure and the sixth metal substructure on the substrate, comprises:
and etching a fourth metal sublayer, a fifth metal sublayer and a sixth metal sublayer of the second metal structure to form the fourth metal substructure, the fifth metal substructure and the sixth metal substructure of the second structure until the fifth metal substructure is on the boundary of the orthographic projection of the substrate base plate, and the fourth metal substructure and the sixth metal substructure are on the boundary of the orthographic projection of the substrate base plate to have a second set distance.
6. The method according to claim 1, wherein the etching the first metal structure to obtain the first structure of the barrier structure, such that orthographic projections of the first metal substructure and the second metal substructure in the first structure on the substrate base plate are located in orthographic projections of the first metal substructure and the third metal substructure on the substrate base plate, comprises:
etching a first metal sub-layer, a second metal sub-layer and a third metal sub-layer of the first metal structure to form the first metal sub-structure, the second metal sub-structure and the third metal sub-structure of the first structure until the boundary of the orthographic projection of the second metal sub-structure on the substrate base plate and the boundary of the orthographic projection of the first metal sub-structure and the orthographic projection of the third metal sub-structure on the substrate base plate have a first set distance.
7. The method for manufacturing a display panel according to claim 1, wherein the manufacturing of the photoresist structure on the side of the first passivation layer away from the substrate base plate comprises:
preparing a light resistance layer on one side of the first passivation layer far away from the substrate, so that the light resistance layer covers the quasi-pixel structure of the substrate on one side of the display area;
and patterning the light resistance layer to enable the part of the light resistance layer, which is positioned in the isolation area, to form the light resistance structure.
8. A display panel comprising a display region and a blocking region surrounding the display region, wherein the display panel is prepared based on the method for preparing the display panel according to any one of claims 1 to 7, and the display panel comprises:
a substrate base plate;
the barrier structure is positioned on one side of the substrate base plate and positioned in the barrier area; the barrier structure comprises a first structure, the first structure comprises a first metal substructure, a second metal substructure and a third metal substructure which are sequentially stacked along the direction far away from the substrate base plate, the orthographic projection of the second metal substructure on the substrate base plate is positioned in the orthographic projection of the first metal substructure and the orthographic projection of the third metal substructure on the substrate base plate;
and the first passivation structure is positioned on one side of the third metal substructure, which is far away from the substrate base plate.
9. The display panel according to claim 8, wherein the boundary of the orthographic projection of the second metal substructure on the substrate base plate has a first set distance from the boundary of the orthographic projection of the first metal substructure on the substrate base plate;
the orthographic projection of the first passivation structure on the substrate base plate covers the orthographic projection of the third metal substructure on the substrate base plate.
10. The display panel of claim 9, wherein an orthographic projection of the first metal substructure on the substrate base overlaps an orthographic projection of the third metal substructure on the substrate base.
11. The display panel according to claim 9, wherein the barrier structure further comprises a second structure on a side of the first structure remote from the substrate base, wherein a side of the second structure remote from the substrate base is provided with a second passivation structure;
the second structure comprises a fourth metal substructure, a fifth metal substructure and a sixth metal substructure which are sequentially stacked along a direction far away from the substrate base plate, wherein the orthographic projection of the fifth metal substructure on the substrate base plate is positioned in the orthographic projection of the fourth metal substructure and the orthographic projection of the sixth metal substructure on the substrate base plate; the orthographic projection boundary of the fifth metal substructure on the substrate base plate has a second set distance with the orthographic projection boundary of the fourth metal substructure on the substrate base plate; and the orthographic projection of the second passivation structure on the substrate base plate covers the orthographic projection of the sixth metal substructure on the substrate base plate.
12. The display panel of claim 11, wherein the orthographic projection of the fifth metal substructure on the substrate base is within the orthographic projection of the second metal substructure on the substrate base.
13. The display panel according to claim 11, wherein an organic light emitting layer is provided on a side of the second passivation structure away from the substrate base plate.
14. The display panel according to claim 11, wherein the first predetermined distance and the second predetermined distance each have a value in a range of 0.3 to 0.5 μm.
15. A display device, comprising: the display panel of any one of claims 8-14.
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| CN109802052B (en) * | 2019-01-25 | 2021-05-07 | 上海天马微电子有限公司 | Organic light-emitting display panel and manufacturing method thereof |
| CN109935621B (en) * | 2019-03-29 | 2021-02-26 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and display device |
| CN110265583B (en) * | 2019-07-26 | 2022-08-12 | 京东方科技集团股份有限公司 | Display panel, preparation method thereof and display device |
| CN110444690B (en) * | 2019-08-20 | 2022-03-04 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
| CN110518147B (en) * | 2019-08-30 | 2023-07-21 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
| CN111180496B (en) * | 2020-01-06 | 2023-07-04 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof, display panel and display device |
| CN112599702B (en) * | 2020-12-14 | 2022-08-02 | 合肥维信诺科技有限公司 | Display panel manufacturing method, display panel and display device |
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| WO2020258728A1 (en) * | 2019-06-27 | 2020-12-30 | Boe Technology Group Co., Ltd. | Display panel, manufacturing method thereof, and display apparatus |
| CN110718466A (en) * | 2019-09-23 | 2020-01-21 | 深圳市华星光电技术有限公司 | Display panel and preparation method thereof |
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