CN115995693A - Dual-frenquency antenna array structure - Google Patents
Dual-frenquency antenna array structure Download PDFInfo
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Abstract
The invention discloses a dual-frequency antenna array structure which is a multilayer laminated structure, and sequentially comprises a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, a third metal layer, a third dielectric layer and a fourth metal layer from bottom to top; the rectangular waveguide-SIW transition structure consists of a first metal layer, a second metal layer, a first dielectric layer and a second dielectric layer; the SIW power divider and the impedance matching structure are formed by a second metal layer, a third metal layer and a second dielectric layer; the antenna radiator consists of a third metal layer, a fourth metal layer and a third dielectric layer. The dual-frequency antenna array structure provided by the invention can realize dual-frequency radiation, excite the high-order mode of SIC, has smaller size and can ensure high gain and high radiation efficiency.
Description
Technical Field
The invention belongs to the technical field of array antennas, and particularly relates to a dual-frequency antenna array structure.
Background
The antenna is one of key components in a wireless communication system, plays a role in converting guided electromagnetic waves and radiating electromagnetic wave energy, and has the current development direction and targets of wide bandwidth, high efficiency, high gain and small volume; however, it is often difficult to achieve both the antenna performance and the size miniaturization, and how to achieve the miniaturization of the millimeter wave antenna while achieving the radiation performance of the antenna has become an important object of research. An important branch of the current miniaturized antenna is a substrate integrated cavity (Substrate integrated cavity, SIC) antenna, which radiates through resonance of the SIC and a radiation window loaded on an upper layer metal; the current research is mostly limited to the application of the fundamental mode of the resonant cavity, and how to efficiently apply the higher-order resonant mode to the antenna radiation becomes a problem to be solved.
With the gradual complexity and variability of electromagnetic environment, the antenna with single frequency is difficult to complete transmission tasks, so that the increase of the working frequency point of the antenna becomes a solution; the use of low frequency bands has been quite crowded and there is a need to design higher frequency band suitable devices to address this problem.
Disclosure of Invention
The present invention is directed to a dual-band antenna array structure, which solves one or more of the above-mentioned problems. The dual-frequency antenna array structure provided by the invention can realize dual-frequency radiation, excite the high-order mode of SIC, has smaller size and ensures high gain and high radiation efficiency.
In order to achieve the above purpose, the invention adopts the following technical scheme:
the invention provides a dual-frequency antenna array structure which is a multi-layer laminated structure, and sequentially comprises a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, a third metal layer, a third dielectric layer and a fourth metal layer from bottom to top;
the first metal layer is provided with a rectangular waveguide feed port, and the rectangular waveguide feed port is used for inputting electromagnetic energy into the dual-frequency antenna array structure from an external rectangular waveguide;
the first dielectric layer is provided with a rectangular substrate integration cavity formed by a plurality of metal short-circuit columns, and the rectangular substrate integration cavity is used for resonating electromagnetic wave energy input by the rectangular waveguide feed port and outputting the resonating electromagnetic wave energy;
the second metal layer is provided with a rectangular coupling window; the second dielectric layer is provided with a substrate integrated waveguide transmission structure, an impedance matching structure and a power distribution structure, wherein the substrate integrated waveguide transmission structure is formed by a plurality of metal short-circuit columns; the rectangular coupling window is used for coupling resonant electromagnetic wave energy to the substrate integrated waveguide transmission structure, the impedance matching structure is used for matching the input impedance of the power distribution structure with the characteristic impedance in the substrate integrated waveguide transmission structure, and the power distribution structure is used for distributing and outputting electromagnetic energy transmitted through the impedance matching structure;
an hourglass-shaped coupling gap is formed in the third metal layer; the third dielectric layer is provided with a rectangular substrate integration cavity in an antenna radiator formed by metal short-circuit columns; the hourglass-shaped coupling gap is used for coupling electromagnetic energy distributed and output by the power distribution structure into a rectangular substrate integrated cavity in the antenna radiator and feeding the antenna radiator; the rectangular substrate integrated cavity in the antenna radiator is used for generating electromagnetic resonance modes required by antenna radiation;
and a rectangular radiation window is arranged on the fourth metal layer and is used for radiating electromagnetic energy generated by electromagnetic resonance of the rectangular substrate integrated cavity in the antenna radiator.
The invention further improves that the long sides of the rectangular waveguide feed port, the rectangular substrate integrated cavity and the rectangular coupling window are parallel to each other, the short sides of the rectangular waveguide feed port and the rectangular substrate integrated cavity are parallel to each other, and the center positions of the rectangular waveguide feed port, the rectangular substrate integrated cavity and the rectangular coupling window are aligned in the vertical direction;
the size of the rectangular coupling window is smaller than the size of the rectangular waveguide feed port is smaller than the size of the rectangular substrate integrated cavity.
A further improvement of the invention is that the power distribution structure is provided with four output ports for quarter-outputting the electromagnetic energy transmitted through the impedance matching structure.
The invention further improves that three independent metal short-circuit posts are arranged in the power distribution structure in the second dielectric layer and used for changing the phase of the output port.
The invention is further improved in that the number of the hourglass-shaped coupling gaps arranged on the third metal layer is four; the number of the rectangular substrate integrated cavities in the antenna radiator arranged on the third dielectric layer is four; the rectangular radiation windows arranged on the fourth metal layer are divided into four groups;
the centers of the four hourglass-shaped coupling gaps are aligned up and down with the centers of the rectangular substrate integration cavities in the four antenna radiators one by one; the centers of the rectangular substrate integrated cavities in the four antenna radiators are aligned with the centers of the four groups of rectangular radiating windows one by one.
The invention further improves that the rectangular substrate integrated cavities in the four antenna radiators form a field-shaped structure.
The invention is further improved in that four groups of rectangular radiation windows form a field-shaped structure together;
each group of rectangular radiation windows comprises four rectangular holes, and the four rectangular holes are respectively positioned in four rectangular frames of the field-shaped structure.
The invention further improves that the substrate integrated waveguide transmission structure in the second dielectric layer is a two-row metal short-circuit post structure which keeps a preset distance.
The invention further improves that the multi-layer laminated structure adopts a low-temperature co-fired ceramic process to fix the layers.
Compared with the prior art, the invention has the following beneficial effects:
aiming at the problem that miniaturization, high gain and high efficiency are difficult to achieve, the dual-frequency antenna array structure provided by the invention adopts the SIC antenna which is transited by rectangular waveguide feed and substrate integrated waveguide (Substrate integrated waveguide, SIW for short), the method has the characteristic of a multi-layer structure, different parts of the antenna are arranged on different layers, the longitudinal space is fully utilized, and the high gain and high radiation efficiency can be ensured while the miniaturization is realized. Aiming at the problem of crowding frequency bands, the dual-frequency antenna array structure provided by the invention uses a high-order resonance mode of SIC instead of a basic mode, and the means improves the working frequency of the antenna, can reduce the electromagnetic interference of the same frequency band in the use of the antenna, and simultaneously reduces the complexity and the demand level of signal modulation work.
Aiming at the problem of interlayer alignment of a multilayer laminated structure, the invention adopts a low-temperature co-fired ceramic (LTCC) process, and the process reduces the occurrence of the situation of misalignment of the vertical position of the interlayer by uniformly firing the multilayer ceramic, and compared with a PCB (printed circuit board) process, the process has smaller error.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following description of the embodiments or the drawings used in the description of the prior art will make a brief description; it will be apparent to those of ordinary skill in the art that the drawings in the following description are of some embodiments of the invention and that other drawings may be derived from them without undue effort.
Fig. 1 is a schematic structural exploded view of a dual-frequency antenna array structure according to an embodiment of the present invention;
fig. 2 is a schematic top view of an antenna unit radiator structure according to an embodiment of the present invention;
FIG. 3 is a schematic top view of a SIW power divider in accordance with an embodiment of the present invention;
FIG. 4 is a schematic top view of a superstructure of a rectangular waveguide-SIW transition structure in accordance with an embodiment of the present invention;
FIG. 5 is a schematic top view of the lower layer structure of a rectangular waveguide-SIW transition structure according to an embodiment of the present invention;
fig. 6 is a schematic diagram of S-parameter simulation results of an antenna according to an embodiment of the present invention;
FIG. 7 is a diagram showing the real gain direction of the antenna at 146GHz in an embodiment of the invention;
FIG. 8 is a diagram showing the real gain direction of the antenna at 166GHz in an embodiment of the invention;
FIG. 9 is a graph showing the maximum real gain of an antenna as a function of frequency in an embodiment of the present invention;
FIG. 10 is a graph showing the radiation efficiency of an antenna according to the frequency in an embodiment of the present invention;
in the figure, 1, a first metal layer; 2. a first dielectric layer; 3. a second metal layer; 4. a second dielectric layer; 5. a third metal layer; 6. a third dielectric layer; 7. a fourth metal layer; 8. a metal shorting post; 9. a rectangular radiation window; 10. a rectangular substrate integration cavity in the antenna radiator; 11. an hourglass-shaped coupling slot; 12. an impedance matching structure; 13. a rectangular coupling window; 14. a rectangular substrate integration cavity in a rectangular waveguide-SIW transition structure; 15. rectangular waveguide feed.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The invention is described in further detail below with reference to the attached drawing figures:
referring to fig. 1 to 5, the x direction of the label is defined as front, +x direction is rear, +y direction is left, +y direction is right, +z direction is down, +z direction is up; the dual-frequency antenna array structure provided by the embodiment of the invention is a multilayer laminated structure, and the multilayer laminated structure comprises a rectangular waveguide-SIW transition structure, an impedance matching structure, a power divider and a 2 multiplied by 2 antenna array from bottom to top; the dual-band antenna array structure provided by the embodiment of the invention is specifically explained, and totally comprises 7 layers, wherein the dual-band antenna array structure comprises 4 metal layers and 3 dielectric layers, the first metal layer 1, the first dielectric layer 2, the second metal layer 3, the second dielectric layer 4, the third metal layer 5, the third dielectric layer 6 and the fourth metal layer 7 are arranged from bottom to top, all metal layer materials can be high-conductivity metals such as gold, silver and copper, and all dielectric layer materials are insulator materials with relative dielectric constants of 2-15 and relative magnetic permeability of about 1, and can be specifically selected according to the working frequency.
In the embodiment of the invention, the interlayer fixing mode of the multilayer laminated structure can be selected from screw fixing, conductive adhesive bonding, ceramic integrated firing and the like; in the embodiment of the invention, the LTCC technology is recommended to be used for interlayer fixation by adopting a ceramic integrated firing method, so that the occurrence of the interlayer misalignment can be reduced to a greater extent, and the error is reduced.
In the embodiment of the present invention, a rectangular hole is loaded in the first metal layer 1, the long edge of the rectangular hole is along the front-back direction, the short edge is along the left-right direction, and the rectangular hole is a rectangular waveguide feed port 15. A rectangular structure formed by a plurality of metal short-circuit columns is arranged in the first dielectric layer 2, the long edge of the rectangular structure is along the front-back direction, the short edge of the rectangular structure is along the left-right direction, and the rectangular structure is a rectangular substrate integrated cavity 14 in a rectangular waveguide-SIW transition structure. The second metal layer 3 is loaded with a rectangular hole, the long side of which is along the front-back direction and the short side is along the left-right direction, and the rectangular hole is a rectangular coupling window. A SIW transmission structure and a power distribution structure which are formed by a plurality of metal short-circuit columns are arranged in the second dielectric layer 4; the SIW transmission structure comprises two rows of metal short-circuit columns which are arranged at a certain interval in a multi-section manner, the two rows of metal short-circuit columns are called as SIW structures and play a role in conducting electromagnetic waves, and the distance between the two rows of metal short-circuit columns is the width of SIW; for specific example, the structure of the SIW transmission structure from right to left may be: the rightmost side is a row with a length W along the front-back direction 5 Metal shorting columns of (a); a section of width W is arranged at the front end and the rear end of the metal short-circuit column 5 Is of (2); at the leftmost end of the segment SIWA section of distance between two rows is set up by W 5 Uniformly change to W 4 SIW and W of (2) 4 <W 5 The width of the SIW structure is changed into a shape that front and rear rows of metal short-circuit columns are both closed to the inner side, the SIW structure is an axisymmetric structure, and the symmetric axis is along the left-right direction; the width of the section is firstly reduced and then changed back to W from the left end of the section SIW 4 The width of the SIW structure is changed into a SIW structure, wherein the front and rear rows of metal short-circuit columns are formed by expanding outwards after being drawn towards the inner side, the narrowest part of the SIW is the center position of the SIW section in the left-right direction, and the SIW section is an impedance matching structure 12; a SIW power divider formed by a plurality of metal short-circuit columns is arranged at the left end of the impedance matching structure 12, the front side and the rear side of the SIW power divider are axisymmetric, and the symmetry axis is the symmetry axis of the impedance matching structure 12 in the left-right direction; the front half side structure of the SIW power distributor is formed by a section of SIW with a notch, the left side and the right side of the SIW are sealed by metal short-circuit columns, the side of the SIW close to the rear side is aligned with the leftmost metal short-circuit column of the SIW side close to the front side in the impedance matching structure 12 along the left-right direction, and the notch part of the SIW power distributor is a plurality of metal short-circuit columns which are close to the center of the SIW side close to the rear side and are in the right position; the rear half side structure of the SIW power divider is axisymmetric with the front half side structure, the leftmost ends of the notches of the two SIWs are connected by metal short-circuit columns in the front-back direction to form a section of short-circuit column, and the right ends of the notches are not connected; in the embodiment of the invention, three independent metal short-circuit columns are preferably arranged in the SIW power distributor, wherein the three independent metal short-circuit columns are respectively a first independent metal short-circuit column positioned in the SIW power distributor near the front side SIW, a second independent metal short-circuit column positioned between the two SIWs and a third independent metal short-circuit column positioned in the SIW near the rear side SIW, the three independent metal short-circuit columns are aligned along the front and rear directions, and the distance between the first independent metal short-circuit column and the SIW edge at the foremost side of the SIW power distributor is S 3 The second independent metal short-circuit column is positioned on the symmetrical axis of the SIW power divider in the front-rear direction and positioned on the right side of the metal short-circuit column formed by connecting the left ends of SIW notches on the front side and the rear side of the SIW power divider, and the distance is S 4 The distance between the third independent metal short-circuit column and the SIW edge at the rearmost side of the SIW power divider is S 3 。
In the embodiment of the invention, four hourglass-shaped coupling slits 11 are loaded on the third metal layer 5, the vertical direction of the hourglass-shaped coupling slits 11 is along the front-back direction, the horizontal direction of the hourglass is along the left-right direction, and the distance between the centers of the front and back groups of hourglass-shaped coupling slits 11 is W 0 The distance between the centers of the left and right hourglass-shaped coupling gaps 11 is L 0 . The third dielectric layer 6 is provided with four rectangular structures composed of metal short-circuit columns, the rectangular structures are square in the preferred embodiment of the invention, two sides of the rectangular structures are respectively parallel to the front-back direction and the left-right direction, the specific directions of the long side and the short side are not required, the rectangular structures are rectangular SIC10 in the antenna radiator, and the length and the width of the rectangular structures are respectively L 0 And W is 0 The middle four sides of the rectangular substrate integrated cavity 10 in the four antenna radiators are shared parts, and form a 'field' -shaped structure together. Sixteen rectangular holes are loaded on the fourth metal layer 7, the long edges of the rectangular holes are along the front-back direction, the short edges of the rectangular holes are along the left-right direction, the rectangular holes are rectangular radiation windows 9, the sixteen rectangular radiation windows 9 can be divided into four groups, four groups of rectangular radiation windows are arrayed in a 'field' shape and are respectively positioned in four rectangular frames of the 'field' shape, and the four rectangular radiation windows in each group of rectangular radiation windows are also arrayed in the 'field' shape and are respectively positioned in the four rectangular frames of the 'field' shape.
The embodiment of the present invention is specifically exemplified, and the size of the rectangular waveguide feed port 15 on the first metal layer 1 is the size of a standard rectangular waveguide of the frequency band used by the antenna; for example, the rectangular waveguide feed 15 may be sized as a standard rectangular waveguide of the D band, model WR-6.5.
In the preferred technical scheme of the embodiment of the invention, the rectangular waveguide feed port 15 positioned on the first metal layer 1, the rectangular substrate integrated cavity 14 positioned in the rectangular waveguide-SIW transition structure in the first dielectric layer 2 and the rectangular coupling window 13 positioned on the second metal layer 3 are parallel to each other, the short sides are parallel to each other, and the central positions of the three are aligned in the up-down direction; and the dimensional relationship among the three is as follows: rectangular coupling window 13< rectangular waveguide feed 15< rectangular substrate integration cavity 14 in rectangular waveguide-SIW transition structure.
In the embodiment of the present invention, the center point of the rectangular coupling window 13 located on the second metal layer 3 is equal to the width W of the second dielectric layer 4 in the front-rear direction 5 The middle position of SIW is consistent, and the distance L between the middle position and the rightmost metal short-circuit column in the second dielectric layer 4 in the left-right direction 5 +wf/2。
In the embodiment of the invention, the center point of the hourglass-shaped coupling gap 11 positioned on the third metal layer 5 and at the upper left corner is consistent with the center of the rectangular structure positioned on the front side in the SIW power divider positioned on the second dielectric layer 4 in the front-back direction, and the distance between the center point and the leftmost metal shorting post edge of the SIW power divider in the left-right position is L 3 +W 2 /2. The centers of each of the four hourglass-shaped coupling slots 11 on the third metal layer 5, the centers of each of the rectangular SIC10 in the four antenna radiators in the third dielectric layer 6, and the centers of each of the four sets of rectangular radiation windows 9 on the fourth metal layer 7 are aligned up and down.
The working principle of the technical scheme provided by the embodiment of the invention is as follows: the rectangular waveguide feed 15 on the first metal layer 1 functions to input electromagnetic energy from an external rectangular waveguide into the interior of the antenna structure; the rectangular substrate integration cavity 14 in the rectangular waveguide-SIW transition structure in the first dielectric layer 2 has the function of resonating the energy input into the antenna structure from the external rectangular waveguide, so that the conversion of the electromagnetic wave mode in the waveguide and the electromagnetic wave mode in the SIW can be realized conveniently; the rectangular coupling window 13 located on the second metal layer 3 functions to couple electromagnetic energy resonating in the rectangular substrate integration cavity 14 in the rectangular waveguide-SIW transition structure into the upper-layer SIW transmission structure; the function of the SIW transmission structure in the second dielectric layer 4 is to further transition electromagnetic energy input by the lower layer structure, thereby completing the conversion between the electromagnetic wave mode in the waveguide and the electromagnetic wave mode in the SIW; the impedance matching structure 12 in the second dielectric layer 4 is used for matching the input impedance of the SIW power divider with the characteristic impedance in the SIW transmission structure, so that loss caused by impedance mismatch of the portion is reduced; the function of the SIW power divider located in the second dielectric layer 4 is to divide electromagnetic energy transmitted through the impedance matching structure 12 into four, so as to ensure that the amplitudes of four output ports (the hourglass-shaped coupling slits 11) are the same and the phases of the left and right groups of ports are 180 degrees different; the three independent metal short-circuit columns are used for changing the phases of the left output port and the right output port, so that the phase difference of 180 degrees is realized. The function of the hourglass-shaped coupling slot on the third metal layer 5 is to couple the electromagnetic energy output in the SIW power divider into the rectangular substrate integration cavity 10 in the upper antenna radiator; the hourglass-shaped coupling gap feeds the antenna radiator, and compared with a traditional rectangular coupling gap, more electromagnetic energy can be coupled into the resonant cavity of the third dielectric layer, so that the efficiency of the antenna is improved. The rectangular substrate-integrated cavity 10 in the antenna radiator in the third dielectric layer 6 functions to generate the electromagnetic resonance modes required for the antenna radiation. The rectangular radiation window 9 on the fourth metal layer 7 functions to radiate electromagnetic energy of two higher order modes generated by electromagnetic resonance of the rectangular substrate integration cavity 10 in the antenna radiator with high gain and high efficiency.
In the technical scheme provided by the embodiment of the invention, the rectangular waveguide-SIW transition structure formed by the first metal layer 1, the second metal layer 3, the first dielectric layer 2 and the second dielectric layer 4 has the integral function of converting the electromagnetic wave mode in the external rectangular waveguide into the electromagnetic wave mode in the SIW with low loss. The SIW power divider and the impedance matching structure formed by the second metal layer 3 and the third metal layer 5 and the second dielectric layer 4 have the function of transmitting electromagnetic energy with low loss to each unit of the antenna array structure, and ensure that the amplitude of each antenna unit is the same, and the phase difference between the left antenna unit and the right antenna unit is 180 degrees. In the antenna radiator formed by the third metal layer 5, the fourth metal layer 7 and the third dielectric layer 6, four groups of rectangular radiation windows 9 positioned on the fourth metal layer 7 and rectangular substrate integrated cavities 10 positioned in four antenna radiators in the third dielectric layer 6 are combined to successfully excite two high-order resonance modes of rectangular SIC in the antenna radiators, so that high-gain and high-efficiency dual-frequency radiation is realized, the antenna radiator can be suitable for more and more complex application scenes, the working frequency is improved, and the electromagnetic interference of the through frequency band in the use of the antenna is effectively reduced. In addition, an hourglass-shaped coupling gap, rectangular SIC and a group of (four) rectangular radiating windows in an antenna radiator are overlapped in the vertical direction to form an antenna unit radiator, and the four antenna unit radiators are arranged in a 'field' -shaped manner to form a 2 x 2 antenna array radiator structure.
In summary, in order to realize mode conversion of electromagnetic waves in rectangular waveguide and SIW, the embodiment of the invention designs a transition structure, and realizes mode conversion of impedance matching and low insertion loss; two high-order resonance modes of SIC and four rectangular radiation windows are used in the antenna structure, so that double-frequency radiation is realized; the smaller size and higher gain and radiation efficiency make it a suitable choice for dual-band antennas. Aiming at the problem that the electromagnetic signal environment is gradually more complex and changeable, the technical scheme of exciting two SIC high-order resonance modes is adopted in the invention, and the method has the characteristic of double-frequency operation and can be suitable for more and more complex application scenes.
Referring to fig. 1, fig. 1 is a schematic diagram of a hierarchical structure according to an embodiment of the invention; in the embodiment of the invention, a rectangular waveguide-SIW transition structure is formed by a first metal layer 1, a second metal layer 3, a first dielectric layer 2 and a second dielectric layer 4; the SIW power divider and the impedance matching structure are formed by a second metal layer 3, a third metal layer 5 and a second dielectric layer 4; an antenna radiator is composed of a third metal layer 5, a fourth metal layer 7 and a third dielectric layer 6.
Referring to fig. 2, fig. 2 is a schematic diagram of a radiator portion of a unit antenna according to an embodiment of the invention; in the embodiment of the present invention, the dimension W in the third dielectric layer 6 is 0 ×L 0 The center of the rectangle SIC is the symmetrical center, and four dimensions W are loaded on the fourth metal layer 7 S ×L S To achieve a high efficiency radiation of energy in the resonator; the spacing between the rectangular radiation window in the y direction and the x direction is S respectively 1 And S is 2 The distance between adjacent metal shorting posts 8 is Dp 1 The diameter of the metal column is d; the antenna radiator part is shaped like an hourglass loaded on the third metal layer 5The coupling slot 11 feeds.
Referring to fig. 3, fig. 3 is a schematic diagram showing a power divider and an impedance matching structure according to an embodiment of the invention; in the embodiment of the invention, the SIW structure on the right side is used for input, a section of SIW impedance matching structure is used for realizing constant-amplitude output at four output ports (namely, hourglass-shaped coupling gaps) through a one-to-four SIW power distributor, 180-degree phase difference exists between the left and right groups of output ports in the working frequency band through the middle three independent metal short-circuit columns, and then energy is transmitted to the rectangular SIC of the upper antenna radiator through the hourglass-shaped coupling gaps 11 loaded on the third metal layer 5; wherein the SIW widths at the input port of the power divider and in the branching branch are W respectively 4 And W is equal to 3 The distance between adjacent metal short-circuit posts is Dp 2 The positions of three independent metal short-circuit columns arranged in the middle are defined by S 3 And S is 4 The size and the position of the hourglass-shaped coupling windows are determined by L, and the y coordinates of the coupling windows are the same 1 、L 3 、W 1 W is provided 2 And (5) determining. The purpose of the impedance matching structure 12 is to increase the bandwidth of the power divider, which is realized by a gradually changing width SIW, length L 2 And keep the width of the left and right ports W 4 . The SIW power splitters are aligned with the antenna radiators in such a way that the center of each hourglass-shaped coupling slot is aligned with the center of the upper SIC10 in the z-direction.
Referring to fig. 4 and 5, fig. 4 and 5 show a rectangular waveguide-SIW transition structure according to the present invention; in the embodiment of the invention, the rectangular waveguide with model WR-6.5 transmits energy to the rectangular SIC with size clf ×cwf on the first dielectric layer 2 through the rectangular waveguide feed port 15 loaded on the first metal layer 1, and then the rectangular coupling window 13 with size lf×wf on the second metal layer 3 couples the energy to the rectangular SIC with width W in the second dielectric layer 4 5 In SIW of (2); then, the mixture passes through a section with the length L 4 Is changed from the width of SIW to W 5 Conversion to the width W for the input port of the impedance matching structure 12 4 The method comprises the steps of carrying out a first treatment on the surface of the Wherein, the spacing between SIW in the second dielectric layer 4 and adjacent metal short-circuit columns in the rectangular SIC14 in the first dielectric layer 2 isDp respectively 2 And Dp 3 The method comprises the steps of carrying out a first treatment on the surface of the Finally, a low loss transition from WR-6.5 rectangular waveguide to SIW is achieved. Specific exemplary, rectangular waveguide-SIW transition structure interlayer alignment: the rectangular coupling window 13, the rectangular SIC14 and the rectangular waveguide feed port 15 are overlapped in the center of the z direction, and the position of the overlapped point in the x direction is W in the width of the second dielectric layer 4 5 Is defined by the parameter L 5 And wf.
The antenna provided by the embodiment of the invention excites two high-order modes of SIC, and realizes double-frequency radiation with high radiation efficiency through the rectangular radiation window loaded on the metal of the upper surface of the antenna structure. Taking a unit antenna as an example, the TM of the antenna is obtained by theoretical and simulation analysis when four rectangular radiation windows are loaded on the upper surface of the antenna 130 (or TM) 310 ) And TM 230 (or TM) 320 ) The mode will achieve radiation, so the resonant mode of the SIC is calculated first by,
wherein f represents the resonant frequency of SIC, ε r Sum mu r L is the relative permittivity and relative permeability of the medium 0 、W 0 Is the length and width of SIC, dp is the distance between adjacent metal short-circuit posts, W eff 、L eff And H eff Representing the equivalent dimensions of SIC, m, n and p represent the resonant order of SIC in the y, x and z directions, respectively, and in the case of thinner media, p=0 is generally considered. Then pass the intrinsic simulation verification and adjust the size of SIC to make it TM 130 (or TM) 310 ) And TM 230 (or TM) 320 ) The mode operates in the desired frequency band. After the resonant frequency is determined, high-gain and high-efficiency dual-frequency radiation is realized by adjusting the spacing and the size of the rectangular radiation window. Compared with the traditional rectangular coupling slot, the antenna radiator is fed by using the hourglass-shaped coupling slot, so that more energy can be coupled into the resonant cavity of the third dielectric layer, and the efficiency of the antenna is improved.
In the preferred embodiment of the invention, the LTCC technology is adopted for processing and preparation, the metal material is gold, and the conductivity is 4.52 multiplied by 10 7 S/M, wherein each layer is about 6-12 mu M thick, the dielectric material is Ferro A6M ceramic, the relative dielectric constant is 5.9, the relative magnetic permeability is 1, and each layer is about 192 mu M thick (consisting of two ceramic dielectric sheets with the layer thickness of about 96 mu M); finally, the antenna array design with miniaturization, high gain and high efficiency is realized.
The embodiment of the invention is specifically exemplified, and the overall dimension is (in mm): 22×15.6x0.598, the specific geometrical parameters are (in mm): l (L) 0 ＝1.44，L 1 ＝0.36，L 2 ＝1.634，L 3 ＝0.334，L 4 ＝1.365，L 5 ＝0.26，L S ＝0.59，W 0 ＝1.44，W 1 ＝0.13，W 2 ＝0.07，W 3 ＝0.78，W 4 ＝0.66，W 5 ＝1.04，W S ＝0.4，S 1 ＝0.23，S 2 ＝0.07，S 3 ＝0.27，S 4 ＝0.315，lf＝0.39，wf＝0.25，clf＝2.55，cwf＝1.5，d＝0.087，Dp 1 ＝0.18，Dp 2 ＝0.182，Dp 3 ＝0.191。
Referring to fig. 6, fig. 6 is a simulation result of S-parameters of a preferred antenna array according to the embodiment; it can be seen that the reflection coefficient of the antenna array is less than-10 dBi in the range of 145GHz-150 GHz and 161GHz-169 GHz.
Referring to fig. 7, fig. 7 is a diagram showing the actual gain of the preferred antenna array at 146 GHz; the gain pattern has good symmetry on both the xoz and yoz planes and the maximum true gain reaches 13.2dBi.
Referring to fig. 8, fig. 8 is a graph showing the actual gain of the preferred antenna array at 166GHz according to the embodiment; the gain pattern has better symmetry on both xoz and yoz planes and the maximum true gain reaches 14.1dBi.
Referring to fig. 9, fig. 9 is a graph showing the maximum real gain of the preferred antenna array according to the embodiment; it can be seen that the maximum true gain of the antenna array is greater than 12dBi in both the 145GHz-150 GHz and 161GHz-169 GHz frequency bands.
Referring to fig. 10, fig. 10 is a graph showing the radiation efficiency of the preferred antenna array according to the embodiment; the radiation efficiency of the antenna array is more than 75% in the working frequency bands of 145GHz-150 GHz and 161GHz-169 GHz.
Finally, it should be noted that: the above embodiments are only for illustrating the technical aspects of the present invention and not for limiting the same, and although the present invention has been described in detail with reference to the above embodiments, it should be understood by those of ordinary skill in the art that: modifications and equivalents may be made to the specific embodiments of the invention without departing from the spirit and scope of the invention, which is intended to be covered by the claims.
Claims (9)
1. The dual-frequency antenna array structure is characterized by being of a multi-layer laminated structure, and sequentially comprising a first metal layer (1), a first dielectric layer (2), a second metal layer (3), a second dielectric layer (4), a third metal layer (5), a third dielectric layer (6) and a fourth metal layer (7) from bottom to top;
the first metal layer (1) is provided with a rectangular waveguide feed port (15), and the rectangular waveguide feed port (15) is used for inputting electromagnetic energy into the dual-frequency antenna array structure from an external rectangular waveguide;
the first dielectric layer (2) is provided with a rectangular substrate integrated cavity formed by a plurality of metal short-circuit columns (8), and the rectangular substrate integrated cavity is used for resonating electromagnetic wave energy input by the rectangular waveguide feed port (15) and outputting the resonating electromagnetic wave energy;
the second metal layer (3) is provided with a rectangular coupling window (13); the second dielectric layer (4) is provided with a substrate integrated waveguide transmission structure, an impedance matching structure (12) and a power distribution structure, wherein the substrate integrated waveguide transmission structure is formed by a plurality of metal short-circuit columns (8); the rectangular coupling window (13) is used for coupling resonant electromagnetic wave energy to the substrate integrated waveguide transmission structure, the impedance matching structure (12) is used for matching the input impedance of the power distribution structure with the characteristic impedance in the substrate integrated waveguide transmission structure, and the power distribution structure is used for distributing and outputting electromagnetic energy transmitted through the impedance matching structure (12);
an hourglass-shaped coupling gap (11) is formed in the third metal layer (5); the third dielectric layer (6) is provided with a rectangular substrate integration cavity (10) in an antenna radiator formed by metal short-circuit columns (8); the hourglass-shaped coupling gap (11) is used for coupling electromagnetic energy distributed and output by the power distribution structure into a rectangular substrate integrated cavity (10) in the antenna radiator and feeding the antenna radiator; the rectangular substrate integrated cavity (10) in the antenna radiator is used for generating electromagnetic resonance modes required by antenna radiation;
the fourth metal layer (7) is provided with a rectangular radiation window (9), and the rectangular radiation window (9) is used for radiating electromagnetic energy generated by electromagnetic resonance of a rectangular substrate integrated cavity (10) in the antenna radiator.
2. The dual-frequency antenna array structure according to claim 1, wherein the rectangular waveguide feed port (15), the rectangular substrate integrated cavity on the first dielectric layer (2) and the long side and the short side of the rectangular coupling window (13) are parallel to each other and aligned in the vertical direction at the center positions of the three;
the size of the rectangular coupling window (13) is smaller than the size of the rectangular waveguide feed port (15) is smaller than the size of the rectangular substrate integrated cavity on the first dielectric layer (2).
3. A dual frequency antenna array structure according to claim 1, characterized in that the power distribution structure is provided with four output ports for quarter-outputting electromagnetic energy transmitted through the impedance matching structure (12).
4. A dual-band antenna array structure according to claim 3, characterized in that three separate metal shorting posts are arranged in the power distribution structure in the second dielectric layer (4) for changing the phase of the output port.
5. A dual-band antenna array structure according to claim 3, characterized in that the number of hourglass-shaped coupling slots (11) provided in the third metal layer (5) is four; the number of the rectangular substrate integration cavities (10) in the antenna radiator arranged on the third dielectric layer (6) is four; the rectangular radiation windows (9) arranged on the fourth metal layer (7) are divided into four groups;
the centers of the four hourglass-shaped coupling gaps (11) are aligned with the centers of the rectangular substrate integrated cavities (10) in the four antenna radiators one by one; the centers of the rectangular substrate integrated cavities (10) in the four antenna radiators are aligned with the centers of the four groups of rectangular radiating windows (9) one by one.
6. The dual-band antenna array structure of claim 5, wherein the rectangular substrate integrated cavities (10) in the four antenna radiators together form a field-like structure.
7. A dual-band antenna array structure according to claim 6, characterized in that four sets of rectangular radiation windows (9) together form a field-like structure;
each group of rectangular radiation windows (9) comprises four rectangular holes which are respectively positioned in four rectangular frames of the field-shaped structure.
8. The dual-band antenna array structure according to claim 1, wherein the substrate integrated waveguide transmission structure in the second dielectric layer (4) is a two-row metal shorting post structure with a predetermined distance.
9. The dual-band antenna array structure of claim 1, wherein the multi-layered laminated structure is interlayer-fixed using a low-temperature co-fired ceramic process.
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