CN115967004A

CN115967004A - Laser semiconductor device and preparation method thereof

Info

Publication number: CN115967004A
Application number: CN202111181037.5A
Authority: CN
Inventors: 江协志; 阮智伟; 邱崇哲; 曾释锋
Original assignee: Hongfutai Precision Electronics Yantai Co Ltd; Hon Hai Precision Industry Co Ltd
Current assignee: Hongfutai Precision Electronics Yantai Co Ltd; Hon Hai Precision Industry Co Ltd
Priority date: 2021-10-11
Filing date: 2021-10-11
Publication date: 2023-04-14
Also published as: JP2023057517A; TW202316759A

Abstract

The application discloses a laser semiconductor device and a preparation method thereof, wherein the laser semiconductor device comprises a substrate, a laser crystal, a conductive piece, a first body and a second body, wherein the first body is arranged on the substrate and encloses an accommodating cavity together with the substrate; the laser crystal is accommodated in the accommodating cavity; the conductive piece is arranged on the first body and is electrically connected with the laser crystal; the second body comprises an installation frame and a lens, the lens is installed on the installation frame, and the installation frame is arranged on the first body so as to cover the accommodating cavity; the first body, electrically conductive piece with the installing frame is the iron-nickel-cobalt alloy material. The laser semiconductor device has good sealing performance and is beneficial to prolonging the service life of the laser semiconductor device.

Description

Laser semiconductor device and method for manufacturing same

Technical Field

The application relates to the technical field of laser semiconductors, in particular to a laser semiconductor device and a preparation method thereof.

Background

In the laser semiconductor industry, an alloy material containing metal elements such as copper and aluminum is often cut by a stamping method, and then the cut alloy material is fixed to a semiconductor substrate by a hot wire melting technology, thereby completing the packaging of a laser semiconductor device. However, the laser semiconductor device manufactured by the current technology still has a defect in the sealing property, which affects the service life of the laser semiconductor device.

Disclosure of Invention

The application mainly aims to provide a laser semiconductor device and a preparation method thereof, and aims to solve the problem that in the prior art, the service life of the laser semiconductor device is shortened due to poor air tightness.

A laser semiconductor device includes a substrate, a laser crystal, a conductive member, a first body and a second body,

the first body is arranged on the substrate and forms an accommodating cavity together with the substrate;

the laser crystal is accommodated in the accommodating cavity;

the conductive piece is arranged on the first body and is electrically connected with the laser crystal;

the second body comprises an installation frame and a lens, the lens is installed on the installation frame, and the installation frame is arranged on the first body so as to cover the accommodating cavity;

the first body, electrically conductive piece with the installing frame is the iron-nickel-cobalt alloy material.

Preferably, the conductive member and the first body are connected and sealed by a first sealing member, and the lens and the mounting frame are connected and sealed by a second sealing member.

Further, the first sealing member and the second sealing member are each sealing resin.

Preferably, the mounting frame is fixed on the first body in a laser welding manner;

the mounting frame is concavely provided with a groove, and the lens is accommodated in the groove;

and a hollow part is arranged at the bottom of the groove and penetrates through the mounting frame, so that the exciting light of the laser crystal can penetrate through the hollow part and irradiate the lens.

Preferably, the first body, the conductive member and the mounting frame are all made by powder metallurgy.

Preferably, the conductive members are arranged in pairs, and the two conductive members of each pair are respectively located at two opposite sides of the first body;

when the number of the laser crystals on the substrate is one, the laser crystals correspond to the pair of the conductive pieces, and the laser crystals are electrically connected with the conductive pieces on the two sides of the first body;

when the number of the laser crystals is two or more, the laser crystals form a crystal array on the substrate, each row of the laser crystals corresponds to one pair of the conductive pieces, two adjacent laser crystals in the same row are electrically connected, and the laser crystals adjacent to the conductive pieces are electrically connected with the adjacent conductive pieces.

Furthermore, the laser semiconductor device further comprises an encapsulation layer, wherein the encapsulation layer covers the second body;

the packaging layer is provided with a light-gathering part, the light-gathering part deviates from the installation frame, the number of the light-gathering parts is equal to that of the laser crystals on the substrate, and the light-gathering parts are located on the light path of the exciting light generated by the laser crystals correspondingly.

A preparation method of a laser semiconductor device comprises the following steps:

mounting a first body on a substrate, wherein the first body and the substrate jointly enclose a containing cavity, and the first body is made of an iron-nickel-cobalt alloy material;

mounting a conductive member on the first body, the conductive member being made of a fe — ni-co alloy material;

accommodating a laser crystal in the accommodating cavity, and electrically connecting the laser crystal with the conductive piece;

mounting a lens on a mounting frame to obtain a second body, wherein the mounting frame is made of an iron-nickel-cobalt alloy material;

and mounting the second body on the first body to cover the accommodating cavity so as to obtain the laser semiconductor device.

Preferably, the method further comprises:

forming a groove on the mounting frame, and forming a hollow part in the groove;

the lens is received in the recess while being exposed to the cutout.

Preferably, the method further comprises:

providing an encapsulation layer, wherein a light-gathering part is formed on the encapsulation layer;

and covering the packaging layer on the second body so that the lens is positioned between the mounting frame and the packaging layer, and the light-gathering part deviates from the mounting frame.

Compared with the prior art, the method has the following advantages:

1. this application starts from the component material, adopts low thermal expansion coefficient's iron nickel cobalt alloy material to make first body, electrically conductive and installing frame, makes the device have good heat resistance, is difficult for taking place expend with heat and contract with cold, has effectively improved laser semiconductor device's leakproofness, and then is favorable to prolonging laser semiconductor device's life.

2. This application has set up first, two sealing members and has realized the sealed between the component, and has still adopted radium-shine welding mode to improve the welding effect, improves the leakproofness of welding seam, consequently can further improve laser semiconductor device's leakproofness.

3. The first sealing piece, the second sealing piece and the iron-nickel-cobalt alloy material with small thermal expansion coefficient difference are adopted, so that the problem of component position deviation caused by overlarge material thermal expansion coefficient difference of different components can be avoided, and the stable and good air tightness performance and safety performance of the laser semiconductor device are further ensured.

4. This application can set up laser crystal quantity according to actual need, compares and only sets up a laser crystal in current laser semiconductor device, and this application laser semiconductor device can reach higher laser intensity.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.

Fig. 1 is an exploded schematic view of a laser semiconductor device according to an embodiment of the present application.

Fig. 2 is a schematic view of the laser semiconductor device shown in fig. 1 after assembly.

Fig. 3 is a schematic view of the laser semiconductor device shown in fig. 2 at another angle.

Fig. 4 is a flow chart of a manufacturing process of the laser semiconductor device shown in fig. 1.

Description of the main elements

Laser semiconductor device 100

Substrate 1

Laser crystal 2

Die piece 21

Reflecting member 22

Conductive member 3

First seal 4

First body 5

Plug hole 51

Second body 6

Mounting frame 61

Groove 611

Hollowed-out portion 612

Lens 62

Second seal 63

Encapsulation layer 7

Light-condensing portion 71

Accommodating cavity 8

The following detailed description will further illustrate the present application in conjunction with the above-described figures.

Detailed Description

In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only partial embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

The terms "first" and "second", etc. in the description of the present application and the above-described drawings are used for distinguishing different objects, not for describing a particular order. Furthermore, the terms "comprises" and any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, article, or apparatus that comprises a list of steps or modules is not limited to the listed steps or modules but may alternatively include other steps or modules not listed or inherent to such process, method, article, or apparatus.

Referring to fig. 1, the present application provides a laser semiconductor device 100. For example, the laser semiconductor device 100 may be a laser diode, and may be applied to a projection apparatus as a light source portion of the projection apparatus. As shown in fig. 1, the laser semiconductor device 100 includes a substrate 1, a laser crystal 2, a conductive member 3, a first sealing member 4, a first body 5, and a second body 6.

The substrate 1 may be made of a metal material such as iron, iron alloy, or copper, or AlN (i.e., aluminum nitride), siC (i.e., silicon carbide), or Si ₃ N ₄ (i.e., silicon nitride), or a combination of these metallic and ceramic materials.

Referring to fig. 1, the laser crystal 2 includes a die element 21 and a reflector 22. The die component 21 is used for exciting light and can be electrically connected with the conductive component 3 and other die components 21. The reflecting member 22 is disposed in the light path of the excitation light from the die member 21, and functions to reflect the excitation light so that the direction of the excitation light is changed.

The first body 5 is fixed on one surface of the substrate 1 by means of soldering. In at least one embodiment of the present application, referring to fig. 1 and 4, the first body 5 is a hollow square frame, and defines a receiving cavity 8 together with the surface of the substrate 1. The laser crystal 2 is accommodated in the accommodating cavity 8. Of course, in this embodiment, the shape of the first body 5 is not limited, and the first body 5 may be a hollow table or a cylinder according to actual needs.

In at least one embodiment of the present application, the substrate 1 may be configured to be flat or stepped according to the actual height of the laser crystal 2. For example, as shown in fig. 1, the substrate 1 may be provided in a step shape having a high middle portion and a low peripheral edge, and the laser crystal 2 is placed in the middle of the substrate 1, thereby obtaining a higher height. Of course, the height difference between the middle part and the peripheral edge of the substrate 1 can be set according to actual needs.

The number of the laser crystals 2 can be set according to actual needs, and can be more than one. For example, in one case, as shown in fig. 1, the number of the laser crystals 2 is plural, and plural laser crystals 2 constitute a crystal array.

The conductive member 3 is made of an iron-nickel-cobalt alloy, and is used as a pin of the laser semiconductor device 100 for connecting the laser crystal 2 into external positive and negative voltages, so that the laser crystal 2 can be excited by light.

In at least one embodiment of the present application, to facilitate the installation of the conductive member 3 on the first body 5, the first body 5 is provided with a plurality of insertion holes 51 at two opposite sides thereof. For example, in fig. 1, the first body 5 is provided with 4 insertion holes 51 on two opposite sides thereof. Of course, in the embodiment of the present application, the number of the insertion holes 51 is not limited. The conductive member 3 may be provided in the shape of a long bar, for example. The number of the conductive members 3 is the same as that of the insertion holes 51, one end of each conductive member 3 is inserted into a corresponding one of the insertion holes 51 and exposed to the accommodating cavity 8, and the other end is located outside the first body 5, so that the laser semiconductor device 100 is connected with an external circuit in subsequent applications.

In at least one embodiment of the present application, the conductive member 3 and the first body 5 may be connected and sealed by a first sealing member 4. The first seal member 4 may be made of a sealing resin. The sealing resin may be, for example, low temperature glass, have a low melting temperature (e.g., a melting temperature of about 300 to 400 ℃), and are resistant to high pressure (e.g., can withstand about 10 ℃) ^-9 Pa high pressure) to achieve a sealing effect. The conductive member 3 may be covered with the first sealing member 4 at one end thereof for inserting the first body 5, and then inserted into the insertion hole 51 of the first body 5. Thus, when the conductive member 3 is inserted into the corresponding insertion hole 51 through the first sealing member 4, the first sealing member 4 fills the gap between the conductive member 3 and the first body 5, and the first sealing member 4 can be more attached to the conductive member 3 and the first body 5 after being melted, so as to seal the conductive member 3 and the first body 5The sealing effect is better.

In at least one embodiment of the present application, the conductive members 3 are provided in pairs. The two conductive members 3 of each pair are respectively located at two opposite sides of the first body 5. When the number of the laser crystals 2 on the substrate 1 is one, the laser crystals 2 correspond to a pair of the conductive members 3, and the laser crystals 2 are connected with the conductive members 3 on the two sides of the first body 5 through wires to form electrical connection. When the number of the laser crystals 2 is two or more, the laser crystals 2 form a crystal array on the substrate 1, and each row of the laser crystals 2 corresponds to a pair of the conductive members 3. The laser crystals 2 in the same row are electrically connected with each other through a wire, and the laser crystals 2 adjacent to the conductive members 3 are electrically connected with the conductive members 3 adjacent to each other through a wire.

Referring to fig. 2 to 3, the second body 6 is disposed on the first body 5. Referring to fig. 1, the second body 6 includes a mounting frame 61, a lens 62 and a second sealing member 63. Wherein, the mounting frame 61 adopts the iron-nickel-cobalt alloy material. In at least one embodiment of the present application, the shape of the mounting frame 61 is not limited, and the mounting frame 61 may be configured into other shapes according to actual needs, as long as it can be matched with the first body 5 to cover the accommodating cavity 8. For example, referring to fig. 1, in the present embodiment, the mounting frame 61 has a square shape so as to match with the shape of the first body 5 and completely cover the accommodating cavity 8.

The mounting frame 61 and the first body 5 are connected in a laser welding manner. Laser welding may also be referred to as laser welding. At present, the welding surface of the hot wire melting technology needs to be a plane and needs to keep a certain area, so that the welding requirement is high, and if the welding requirement cannot be met, the sealing property of a welding seam can be directly influenced. And by adopting a laser welding mode, the welding method is not limited by the appearance of the element, and has obvious advantages in the aspects of air tightness of welding seams and technical applicability compared with the conventional hot wire melting mode.

The lens 62 is stacked above the mounting frame 61. It can be understood that the mounting frame 61 is concavely provided with a groove 611 at the center position thereof, the shape of the groove 611 is matched with the lens 62, the lens 62 can be accommodated in the groove 611, and the groove 611 is used for limiting, so that the mounting frame can be stably mounted above the mounting frame.

It is understood that a hollow 612 is formed at the bottom of the groove 611 in order to allow the excitation light of the laser crystal 2 to be irradiated to the lens 62. The hollow portion 612 is provided to penetrate the mounting frame 61, and is configured to allow excitation light of the laser crystal 2 to pass through the hollow portion 612 and irradiate the lens 62. That is, the excitation light generated by the die element 21 can be directly emitted to the lens 62 after being emitted by the reflector 22, and the excitation light is emitted outwards after passing through the lens 62.

It is understood that the number of the hollows 612 may be at least one. That is, when there is only one hollow 612, the number of the laser crystals 2 on the substrate 1 may be at least one, and the excitation light of the laser crystals 2 on the substrate 1 is incident on the lens portion exposed by the same hollow 612. When the number of the hollowing portions 612 is at least two, the number of the laser crystals 2 is the same as that of the hollowing portions 612, the laser crystals 2 and the hollowing portions 612 are arranged in an array, each laser crystal 2 corresponds to one of the hollowing portions 612, and excitation light of each laser crystal 2 is incident on a lens portion exposed by the corresponding hollowing portion 612.

The lens 62 and the mounting frame 61 are connected and sealed by a second sealing member 63. In some embodiments, the lens 62 may be an optical lens. The second sealing member 63 may be made of the same material as the first sealing member 4, for example, sealing resin. The sealing resin may be, for example, low-temperature glass. The second sealing member 63 is wrapped on the outer peripheral edge of the lens 62, and then the lens 62 wrapped with the second sealing member 63 is placed in the mounting frame 61, so that the second sealing member 63 plays a role of filling a gap between the mounting frame 61 and the lens 62. In addition, the second sealing member 63 can be more attached to the mounting frame 61 and the lens 62 after being thermally melted, and the sealing effect is better.

It is understood that the first sealing member 4 and the second sealing member 63 each use a sealing resin, which has an insulating and sealing function, thereby contributing to the airtightness and safety of the laser semiconductor device 100.

It can be understood that the alloy materials adopted by the common laser semiconductor device contain copper, aluminum and the like, and have certain thermal expansion coefficients. Therefore, when the laser semiconductor device is used in an air environment with high humidity, the metal material is likely to expand with heat and contract with cold due to its own thermal expansion property, and the sealing property is difficult to ensure. Therefore, after the laser semiconductor device is used for a period of time, the metal material is easy to expand with heat and contract with cold, and correspondingly, air contacted with the inside of the laser semiconductor device also expands with heat and contracts with cold. Therefore, air in contact with the inside of the laser semiconductor device flows, and then air in the external environment is brought into the laser semiconductor device, and the air in the external environment contains moisture, impurities and the like, so that the laser semiconductor device is likely to be damaged. In the present application, the first body 5, the conductive member 3, and the mounting frame 61 are made of an alnico alloy material with a low thermal expansion coefficient, so that the problem that the airtightness of the laser semiconductor device 100 is affected by a large thermal expansion coefficient of a metal material can be effectively avoided.

It can be understood that, because the traditional alloy stamping method and the like are adopted, the required product is usually required to be made through cutting, blanking and the like, and because the hardness of the alloy is higher, the service life of the die is inevitably influenced. Therefore, in at least one embodiment of the present application, the first body 5, the conductive member 3 and the mounting frame 61 are made by powder metallurgy, so that the element with the required shape can be directly prepared according to the required shape, the flexibility is better, and the cutting or stamping is not needed, and the generation of waste materials can be avoided.

In addition, in order to further enhance the sealing performance of the laser semiconductor device 100, referring to fig. 1 to 3, the laser semiconductor device 100 further includes an encapsulation layer 7. The encapsulation layer 7 may cover the second body 6. The encapsulation layer 7 may be made of glass, has good heat resistance, pressure resistance and sealing performance, and may be adhered to the second body 6 by an adhesive, such as UV glue.

In at least one embodiment of the present application, the encapsulation layer 7 is provided with a light-condensing portion 71, and the light-condensing portion 71 may be configured in a circular arc shape. The light-condensing portion 71 is disposed away from the mounting frame 61. The light-condensing portion 71 serves to condense the excitation light that has passed out of the lens 62 into one beam, so that the laser semiconductor device 100 can have a large light intensity when it is used as a light source portion of a projection apparatus.

It is understood that, in some embodiments, the number of the light-condensing portions 71 is the same as the number of the laser crystals 2 on the substrate 1, and each light-condensing portion 71 corresponds to one laser crystal 2. It is understood that when there is one laser crystal 2, the light-condensing portion 71 may be disposed one by one and located on the optical path of the excitation light generated by the laser crystal 2. When the number of the laser crystals 2 is two or more, the light-condensing portions 71 correspond to the crystal arrays, and the arrays are also correspondingly composed, and each light-condensing portion 71 is respectively located on the optical path of the excitation light generated by the laser crystal 2 corresponding to the light-condensing portion 71.

The application provides in laser semiconductor device 100, first body 5 electrically conductive 3 with installation frame 61 has all adopted the iron-nickel-cobalt alloy of low thermal expansion coefficient, first sealing member 4 second sealing member 63 all adopts the sealing resin of low thermal expansion coefficient, installation frame 61 with adopt the better radium-shine welding mode of welding seam leakproofness to connect between the first body 5, so can form the multilayer guarantee, can effectively improve laser semiconductor device 100's gas tightness. In addition, the sealing resin and the nickel-cobalt alloy iron have low thermal expansion and small thermal expansion coefficient difference, so that the problem of element position deviation caused by overlarge thermal expansion coefficient difference of different elements can be solved.

Fig. 4 is a schematic flow chart illustrating a method for manufacturing the laser semiconductor device 100 according to the present disclosure. The method is used for manufacturing the laser semiconductor device 100, and specifically comprises the following steps:

s1, mounting a first body 5 on the surface of a substrate 1, wherein the first body 5 and the substrate 1 enclose a containing cavity 8.

In at least one embodiment of the present application, the first body 5 is made of an iron-nickel-cobalt alloy material, and may be designed in a square frame shape. The substrate 1 may be made of a metal material such as iron, iron alloy or copper, or AlN (i.e., aluminum nitride), siC (i.e., silicon carbide) or Si ₃ N ₄ (i.e., silicon nitride) or the like, or a combination of these metal materials and ceramic materials, and the shape thereof may be designed to be flat or stepped with a central protrusion.

In step S1, a silver-copper solder paste may be coated on a contact portion between the first body 5 and the substrate 1, and then the first body 5 and the substrate 1 may be placed in a silver soldering furnace at a temperature of 900 to 1000 ℃ and a pressure of 10 ^-9 And Pa for 1-2 h in a vacuum environment, so that the first body 5 is welded on the substrate 1 through silver-copper solder paste. In the vacuum firing process, the gas generated by chemical reaction of the silver-copper solder paste due to impurities is reduced, and the gas is prevented from escaping to form air holes to influence the joint of the first body 5 and the substrate 1, namely the air tightness of the welding seam.

And S2, mounting a conductive piece 3 on the side surface of the first body 5.

In at least one embodiment of the present application, the conductive member 3 is made of an iron-nickel-cobalt alloy material, and may be formed in a long bar shape, for example, to serve as a lead of the laser semiconductor device 100.

The process of step S2 is specifically: firstly, coating one end of the conductive piece 3 for connecting with the first body 5 with a first sealing piece 4, then inserting one end of the conductive piece 3 coated with the first sealing piece 4 into the insertion holes 51 at two opposite sides of the first body 5, wherein the end can be exposed out of the accommodating cavity 8 so as to be electrically connected with the laser crystal 2 subsequently, and the other end of the conductive piece 3 is positioned outside the first body 5 so as to be connected with an external circuit subsequently;

then, the conductive component 3, the first sealing component 4 and the first body 5 are placed in an air environment of 900-1000 ℃ and fired for 3-4 h, and after the first sealing component 4 is melted and cooled, the joint between the conductive component 3 and the first body 5 can be sealed, so that the conductive component 3 is hermetically fixed on the first body 5.

S3, containing the laser crystal 2 in the containing cavity 8, and connecting the laser crystal 2 with the conductive piece 3 in a circuit mode.

The process of step S3 is specifically: firstly, the die pieces 21 of the laser crystal 2 are installed on the surface of the substrate 1 in the containing cavity 8, the die pieces 21 are used as light emitting sources, the reflecting pieces 22 of the laser crystal 2 are installed on the light paths of the exciting light generated by the corresponding die pieces 21, so that after each die piece 21 is excited by the exciting light, the exciting light just can be emitted to the corresponding reflecting piece 22 to be reflected;

then, line connection is carried out: when the number of the laser crystals 2 on the substrate 1 is one, the crystal grain pieces 21 of the laser crystals 2 are connected with the conductive pieces 3 on two sides of the first body 5 through wires;

when the number of the laser crystals 2 on the substrate 1 is two or more, the laser crystals 2 form a crystal array on the substrate 1, wherein the crystal grain pieces 21 in every two adjacent laser crystals 2 in the same row are connected by a wire, and the crystal grain pieces 21 in the laser crystals 2 adjacent to the conductive piece 3 are connected with the adjacent conductive piece 3 by a wire.

S4, the lens 62 is mounted on the mounting frame 61 to obtain the second body 6.

In at least one embodiment of the present application, the mounting frame 61 is made of a fe — ni-co alloy material.

The process of step S4 is specifically: forming a groove 611 in the mounting frame 61, and then forming a hollow 612 in the groove 611; wrapping the edge of the lens 62 with a second sealing member 63, and then accommodating the lens 62 wrapped with the second sealing member 63 in the groove 611 while being exposed to the outsideA hollow 612. Then, the lens 62, the second sealing member 63 and the mounting frame 61 are all placed together at 400 to 500 ℃ and 10 DEG ^-9 And firing for 1-2 h in a vacuum environment of Pa, and sealing the joint of the mounting frame 61 and the lens 62 after the second sealing member 63 is melted and cooled to realize the sealing and fixing of the lens 62 in the mounting frame 61.

And S5, mounting the second body 6 on the first body 5 to cover the accommodating cavity 8, thereby obtaining the laser semiconductor device 100.

In at least one embodiment of the present application, a laser welding method is used to connect the edge of the mounting frame 61 and the first body 5, so that the second body 6 can be fixed on the first body 5.

In addition, in order to improve the sealing effect, after the steps are completed, a step S6 can be added:

providing a packaging layer 7, wherein the packaging layer 7 is formed with a light-gathering part 71, and the packaging layer 7 is covered above the second body 6, so that the lens 62 is positioned between the mounting frame 61 and the packaging layer 7, and the light-gathering part 71 is away from the mounting frame 61.

It will be appreciated that the encapsulating layer 7 has been pre-formed and that, when mounted, the encapsulating layer 7 is fixed to the second body 6 by means of an adhesive, for example UV glue. After the encapsulation layer 7 is mounted, the excitation light generated by each laser crystal 2 can be focused into a light beam by the corresponding focusing portion 71 after passing through the lens 62, and then the laser semiconductor device 100 can provide light with larger intensity when being applied to a projection apparatus.

It should be noted that, for simplicity of description, the above-mentioned method embodiments are described as a series of acts or combination of acts, but those skilled in the art will recognize that the present application is not limited by the order of acts described, as some steps may occur in other orders or concurrently depending on the application.

The above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A laser semiconductor device comprising a substrate, a laser crystal, a conductive member, a first body and a second body, wherein,

the laser crystal is accommodated in the accommodating cavity;

the first body, the conductive piece and the mounting frame are all made of iron-nickel-cobalt alloy.

2. The laser semiconductor device according to claim 1, wherein the conductive member and the first body are connected and sealed by a first sealing member, and the lens and the mounting frame are connected and sealed by a second sealing member.

3. The laser semiconductor device according to claim 2, wherein the first sealing member and the second sealing member are each a sealing resin.

4. The laser semiconductor device according to claim 1, wherein the mounting frame is fixed to the first body by laser welding;

5. The laser semiconductor device according to claim 1, wherein the first body, the conductive member, and the mounting frame are all made by powder metallurgy.

6. The laser semiconductor device according to claim 1, wherein the conductive members are provided in pairs, two of the conductive members of each pair being located on opposite sides of the first body;

7. The laser semiconductor device according to claim 6, further comprising an encapsulation layer overlying the second body;

8. A preparation method of a laser semiconductor device is characterized by comprising the following steps:

9. The method for manufacturing a laser semiconductor device according to claim 8, further comprising:

the lens is received in the recess while being exposed to the cutout.

10. The method for manufacturing a laser semiconductor device according to claim 8, further comprising:

covering the packaging layer on the second body, so that the lens is positioned between the mounting frame and the packaging layer, and the light-condensing part deviates from the mounting frame.