JP2023057517A - Laser semiconductor device and method for manufacturing the same - Google Patents

Abstract

To provide a laser semiconductor device excellent in sealability and advantageous for longer life, and a method for manufacturing the same.SOLUTION: A laser semiconductor device 100 includes a substrate 1, a laser crystal 2, a conductive member 3, a first main body 5 provided on the substrate 1 and forming a storage cavity with the substrate 1 and a second main body 6. The laser crystal 2 is stored in the storage cavity; the conductive member 3 attached to the first main body 5 is electrically connected with the laser crystal 2; the second main body 6 includes a mounting frame 61 provided in the first main body 5 so as to cover the storage cavity and a lens 62 provided in the mounting frame 61; and all of the first main body 5, the conductive member 3 and the mounting frame 61 are formed of iron nickel cobalt alloy.SELECTED DRAWING: Figure 1

Description

TECHNICAL FIELD The present application relates to the field of laser semiconductor technology, and more particularly to a laser semiconductor device and its manufacturing method.

In the conventional laser semiconductor industry, an alloy material containing metal elements such as copper and aluminum is diced by a press method. Complete packaging of semiconductor devices is often done. However, the laser semiconductor device manufactured by the prior art still has insufficient sealing properties, which affects the life of the laser semiconductor device.

The main object of the present application is to provide a laser semiconductor device and a method of manufacturing the same for solving the problem that the lifetime of the laser semiconductor device is shortened due to the poor airtightness of the conventional laser semiconductor device.

A laser semiconductor device comprising a substrate, a laser crystal, a conductive member, a first body, and a second body,
the first body is provided on the substrate and jointly forms a receiving cavity with the substrate;
the laser crystal is housed within the housing cavity;
the conductive member is attached to the first body and electrically connected to the laser crystal;
The second body includes an attachment frame provided on the first body so as to cover the accommodation cavity, and a lens provided on the attachment frame, and comprises the first body, the conductive member, and the attachment frame. are all iron-nickel-cobalt alloys.

Preferably, the conductive member and the first body are connected and sealed by a first sealing material, and the lens and the mounting frame are connected and sealed by a second sealing material. .

Furthermore, both the first sealing material and the second sealing material are sealing resins.

Preferably, the mounting frame is fixed to the first body by laser welding,
The mounting frame is provided with a concave groove in which the lens is accommodated,
A watermark is provided on the groove bottom of the concave groove,
Since the watermark portion is provided through the mounting frame, the excitation light of the laser crystal passes through the watermark portion and is irradiated to the lens.

Preferably, the first body, the conductive member and the mounting frame are all manufactured by a powder metallurgy method.

Preferably, the conductive members are provided in pairs, and the pair of conductive members are positioned on both sides of the first body, respectively;
if there is one laser crystal on the substrate, the laser crystal corresponds to a pair of the conductive members, the laser crystal is electrically connected to the conductive members on both sides of the first body;
when there are a plurality of laser crystals, the laser crystals constitute a crystal array on the substrate, and each row of the laser crystals corresponds to a pair of the conductive members;
Two adjacent laser crystals in the same row are electrically connected to each other, and the laser crystal adjacent to the conductive member is electrically connected to the adjacent conductive member.

Furthermore, further comprising a package layer coated on the second body,
The package layer is provided with a condensing part, the condensing part is provided apart from the mounting frame,
The condensing parts are present in the same number as the laser crystals on the substrate, and are installed in the optical path of the excitation light generated by the corresponding laser crystals.

A method for manufacturing a laser semiconductor device,
attaching to the surface of the substrate a first body which jointly defines a receiving cavity with the substrate and is made of an iron-nickel-cobalt alloy material;
attaching a conductive member made of an iron-nickel-cobalt alloy material to the first body;
housing a laser crystal in the housing cavity and electrically connecting the laser crystal and the conductive member;
obtaining a second main body by mounting a lens on a mounting frame made of an iron-nickel-cobalt alloy material;
attaching the second body to the first body so as to cover the receiving cavity to further obtain the laser semiconductor device.

Preferably, the method for manufacturing a laser semiconductor element includes the steps of forming a groove in the mounting frame and forming a watermark portion in the groove; and a step of containing.

Preferably, the method for manufacturing a laser semiconductor device includes the steps of: providing a package layer having a condensing portion; and covering the second body to separate the condensing portion from the mounting frame.

Compared with the prior art, the present application has the following advantages.
1. In the present application, by manufacturing the first main body, the conductive member, and the mounting frame from an iron-nickel-cobalt alloy material with a low coefficient of thermal expansion, the element has excellent heat resistance, and thermal expansion and coldness are less likely to occur. The encapsulation of the laser semiconductor device is effectively improved, which is advantageous in extending the life of the laser semiconductor device.
2. The present application provides a first sealing material and a second sealing material to seal between elements, and adopts a laser welding method to improve the welding effect and improve the sealing performance of the weld bead. The sealing performance of the laser semiconductor element can be further improved.
3. The present application uses the first and second encapsulants and the iron-nickel-cobalt alloy material with a small difference in thermal expansion coefficient. It is possible to avoid the problem of misalignment and ensure stable and good airtight performance and safety performance of the laser semiconductor device.
4. The present application can provide the number of laser crystals according to the actual demand, and the laser semiconductor device of the present application achieves higher laser intensity than the conventional laser semiconductor device provided with only one laser crystal. can do.

In order to more clearly explain the technical means in the embodiments of the present application and the prior art, the drawings required in the description of the embodiments and the prior art are briefly introduced. The drawings in the following description are only the embodiments of the present application. , it is obvious that a person skilled in the art can derive other drawings from the drawings provided without any creative effort.

1 is an exploded schematic diagram of a laser semiconductor device according to an embodiment of the present application; FIG. FIG. 2 is a schematic diagram after assembly of the laser semiconductor device shown in FIG. 1 ; 3 is a schematic view of the laser semiconductor device shown in FIG. 2 at another angle; FIG. 2 is a diagram showing a manufacturing flow of the laser semiconductor device shown in FIG. 1; FIG.

In order to facilitate the understanding of the present invention by those skilled in the art, the present invention will be clearly and completely described below with reference to the accompanying drawings. The examples provided are only some, but not all, examples of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts fall within the protection scope of the present application.

Terms such as "first" and "second" in the specification and accompanying drawings of the present application are used to distinguish between different objects rather than to describe any particular order. Also, "comprising" and like terms are intended to be exhaustive, e.g., a process, method, system, product, or apparatus comprising a series of steps or modules, such as the listed It is not limited to steps or modules and may include steps or modules not listed or other steps or modules specific to these processes, methods, products or devices. .

As shown in FIG. 1, the present application provides a laser semiconductor device 100, which may be applied to a laser diode as an example, and can be applied to a projection device as a light source part of the projection device. As shown in FIG. 1, the laser semiconductor device 100 includes a substrate 1, a laser crystal 2, a conductive member 3, a first sealing member 4, a first body 5, and a second body 6. .

The aforementioned substrate 1 is a metal material such as iron, an iron alloy or copper, or a ceramic _material such as AlN (i.e. aluminum nitride), SiC (i.e. silicon carbide) or _Si3N4 (i.e. silicon nitride), or It consists of a composition of these metal materials and ceramic materials.

As shown in FIG. 1, the laser crystal 2 includes crystal grains 21 for receiving excitation light and a reflecting member 22 . Crystal grain 21 is electrically connected to conductive member 3 and other crystal grains 21 . The reflecting member 22 is provided on the exit optical path of the excitation light of the crystal grains 21 and serves to reflect the excitation light and change the direction of the excitation light.

The first body 5 is fixed to one surface of the substrate 1 by soldering. Here, the first body 5 is an iron-nickel-cobalt alloy. In at least one embodiment of the present application, as shown in FIGS. 1 and 4, the first body 5 is in the shape of a hollow rectangular frame and forms a receiving cavity 8 jointly with the surface of the substrate 1. there is The laser crystal 2 is housed within the housing cavity 8 . Of course, in this embodiment, the outer shape of the first main body 5 is not limited. The first body 5 may be installed in the shape of a hollow pedestal, cylinder, etc. according to actual needs.

In at least one embodiment of the present application, the substrate 1 may be flat or stepped, depending on the actual height requirements of the laser crystal 2 . For example, as shown in FIG. 1, the substrate 1 may be provided in a stepped shape with a high center and a low peripheral edge, and the laser crystal 2 is placed in the center of the substrate 1, so that the height of the laser crystal 2 is becomes higher. Of course, the height difference between the central portion and the peripheral edge of the substrate 1 may be provided according to actual needs.

The number of laser crystals 2 may be provided according to actual needs, and may be one or more. For example, in some cases, as shown in FIG. 1, the number of laser crystals 2 is multiple. A plurality of laser crystals 2 constitute a crystal array.

As the material of the conductive member 3, iron, iron, or the like is used as the lead pin of the laser semiconductor element 100 so that an external positive or negative voltage can be applied to the laser crystal 2 and the laser crystal 2 can receive the excitation light. Nickel-cobalt alloy material is used.

In at least one embodiment of the present application, two opposite sides of the first body 5 each have a plurality of through-holes 51 in order to easily attach the conductive member 3 to the first body 5 . For example, as shown in FIG. 1, the first main body 5 is provided with four through-holes 51 on opposite sides thereof. not to be The conductive member 3 can be provided in the shape of an elongated bar, for example, and has the same number as the insertion holes 51 . One end of each conductive member 3 is inserted through a corresponding one insertion hole 51 and exposed in the accommodation cavity 8, and the other end of each conductive member 3 is positioned outside the first main body 5, so that it can be used later. A laser semiconductor element 100 is connected to an external circuit.

In at least one embodiment of the present application, the conductive member 3 and the first body 5 may be connected and sealed by a first sealing material 4 . The first encapsulant 4 may be made of encapsulating resin. The sealing resin may be, for example, a low-temperature glass, and has a low melting temperature (eg, a melting temperature of about 300 to 400° C.), high pressure resistance (eg, can withstand a high pressure of about 10 ⁻⁹ Pa), and sealing. There is an advantage that the effect can be achieved. The conductive member 3 is covered with the first sealing member 4 at one end for insertion into the first main body 5 and is inserted into the insertion hole 51 of the first main body 5 . In this way, when the conductive member 3 is inserted into the corresponding insertion hole 51 via the first sealing member 4 , the first sealing member 4 acts as a barrier between the conductive member 3 and the first main body 5 . After the gap is filled and the first sealing material 4 is melted, the conductive member 3 and the first main body 5 are brought into close contact with each other, further improving the sealing effect.

In at least one embodiment of the present application, the conductive members 3 are provided in pairs. A pair of conductive members 3 are positioned on both sides of the first body 5, respectively. Here, when there is one laser crystal 2 on the substrate 1, the laser crystal 2 corresponds to a pair of conductive members 3, and the laser crystal 2 and the conductive members 3 on both sides of the first body 5 are electrically connected by conducting wires. Connected. When there are a plurality of laser crystals 2 , the laser crystals 2 form a crystal array on the substrate 1 . Each row of laser crystals 2 corresponds to a pair of conductive members 3 . The laser crystals 2 in the same row are electrically connected by a conducting wire, and the laser crystals 2 adjacent to the conductive member 3 are electrically connected to the adjacent conducting member 3 by the conducting wire.

Referring also to FIGS. 2-3, the second body 6 is placed over the first body 5 . As shown in FIG. 1, the second main body 6 includes a mounting frame 61, a lens 62, and a second sealing material 63. As shown in FIG. Here, an iron-nickel-cobalt alloy is used as the mounting frame 61 . In at least one embodiment of the present application, the external shape of the mounting frame 61 is not limited, as long as it can engage with the first body 5 and cover the receiving cavity 8, and other shapes according to actual needs. It may be in shape. For example, as shown in FIG. 1, in this embodiment, the mounting frame 61 has a rectangular outer shape to match the shape of the first body 5 and completely cover the receiving cavity 8. .

The attachment frame 61 and the first body 5 are connected by laser welding. Conventionally, the welding surface of heat filament melting technology must be flat, and the size of the area must be kept constant, so the welding requirements are high, and if the welding requirements are not met, the weld bead sealing performance will be directly affected. do. By adopting the laser welding method, there are significant advantages in terms of weld bead airtightness and applicability compared to the heat filament melting technology, which has been widely used in the past, without limiting the external shape of the element.

The lens 62 is stacked above the mounting frame 61 . The mounting frame 61 has a recessed groove 611 having a shape matching the lens 62 at its center position. The lens 62 is accommodated in the concave groove 611 , its position is restricted by the concave groove 611 , and can be stably mounted above the mounting frame 61 .

A watermark portion 612 is provided at the groove bottom of the concave groove 611 so that the lens 62 is irradiated with the excitation light of the laser crystal 2 . The watermark portion 612 is provided through the mounting frame 61 so that the excitation light of the laser crystal 2 passes through the watermark portion 612 and is irradiated onto the lens 62 . That is, the excitation light generated by the crystal grains 21 can directly enter the lens 62 after being reflected by the reflecting member 22 . The excitation light is emitted outside after passing through the lens 62 .

At least one watermark portion 612 may be provided. That is, when there is only one watermark portion 612, the number of laser crystals 2 on the substrate 1 may be at least one. The excitation light of the laser crystal 2 on the substrate 1 is incident on the lens portion appearing from the same watermark portion 612 . When there are at least two watermarks 612, the number of laser crystals 2 is the same as the number of watermarks 612, and both the laser crystals 2 and the watermarks 612 are arranged in an array. corresponds to one watermark portion 612 . The excitation light of each laser crystal 2 is incident on the lens portion appearing from the corresponding watermark portion 612 .

A second sealing member 63 connects and seals the lens 62 and the mounting frame 61 . In some embodiments, lens 62 may be an optical lens. The second sealing material 63 can employ the same material as the first sealing material 4, for example, sealing resin. The encapsulating resin may be, for example, low temperature glass. The outer periphery of the lens 62 is covered with the second sealing material 63 , and the lens 62 covered with the second sealing material 63 is placed in the mounting frame 61 , so that the second sealing material 63 is attached to the mounting frame 61 . and lens 62. In addition, the second sealing material 63 can further bond the mounting frame 61 and the lens 62 together after thermal welding, thereby further enhancing the sealing effect.

Sealing resin is used as a material for both the first sealing member 4 and the second sealing member 63, and the sealing resin has insulating and sealing functions, so that the laser semiconductor element 100 is airtight and safe. sex advantage.

Alloy materials generally used in laser semiconductor devices contain copper, aluminum, etc., and therefore have a certain coefficient of thermal expansion. Therefore, when the laser semiconductor element is used in an air environment with high humidity, the metal material is likely to undergo thermal expansion and cold contraction due to its own thermal expansibility, making it difficult to ensure sealing performance. In this way, after being used for a while, not only does the metal material easily undergo thermal expansion and cold contraction, but also the air with which the inside of the laser semiconductor element is in contact thermally expands and contracts accordingly. As a result, the air inside the laser semiconductor element flows, and the air in the external atmosphere is brought into the laser semiconductor element, and the air in the external atmosphere contains moisture, impurities, etc., which can damage the laser semiconductor element. become more sexual. In contrast, in the present application, the first main body 5, the conductive member 3, and the mounting frame 61 are all made of an iron-nickel-cobalt alloy material with a low coefficient of thermal expansion. It is effectively avoided that the coefficient of thermal expansion is large and affects the hermeticity of the device.

In conventional methods such as alloy pressing, it is usually necessary to form desired products by cutting, punching, etc., and the high hardness of the alloy inevitably affects the life of the mold. Therefore, in at least one embodiment of the present application, by fabricating the first body 5, the conductive member 3, and the mounting frame 61 by powder metallurgy, it is possible to directly fabricate a part having a shape corresponding to a desired shape. , which is more flexible and does not require dicing or pressing, avoiding waste generation.

In order to enhance the sealing performance of the laser semiconductor device 100, the laser semiconductor device 100 further includes a package layer 7, as shown in FIGS. The package layer 7 may be coated on the second body 6 . The package layer 7 is made of a glass material, has excellent heat resistance, pressure resistance and sealing properties, and is adhered to the second body 6 with an adhesive such as a UV adhesive.

In at least one embodiment of the present application, the package layer 7 is provided with a concentrator 71, which can be arcuate. The condensing part 71 is provided apart from the mounting frame 61 . The condensing section 71 condenses the excitation light transmitted through the lens 62 and can increase the light intensity of the laser semiconductor element 100 as the light source section of the projection apparatus.

In some embodiments, there are as many concentrators 71 as there are laser crystals 2 on substrate 1 . Each condensing portion 71 corresponds to one laser crystal 2 . When there is one laser crystal 2 , one condensing section 71 may be arranged on the optical path of the excitation light generated by the laser crystal 2 . When there are two or more laser crystals 2, the condensing portions 71 correspond to and constitute an array of crystals, and each condensing portion 71 defines the optical path of the excitation light generated by the corresponding laser crystal 2. are located respectively.

In the laser semiconductor device 100 provided by the present application, the first main body 5, the conductive member 3, and the mounting frame 61 are all made of an iron-nickel-cobalt alloy with a low coefficient of thermal expansion, and the first sealing member 4 and the second sealing member 63 are In both cases, sealing resin with a low coefficient of thermal expansion is used, and the airtightness of the laser semiconductor element 100 is improved by connecting the mounting frame 61 and the first main body 5 by a laser welding method with excellent sealing performance. can be effectively improved. In addition, both the sealing resin and the iron-nickel-cobalt alloy have low thermal expansion, and the difference in thermal expansion coefficient between them is small. It is possible to avoid displacement of the element.

FIG. 4 is a diagram showing the flow of the method for manufacturing the laser semiconductor device 100 provided by the present application. This method is for manufacturing the laser semiconductor device 100 described above, and specifically includes the following steps.

In step S1, a first body 5 is attached to the surface of the substrate 1 to define a receiving cavity 8 together with the substrate 1 .

In at least one embodiment of the present application, the first body 5 is made of an iron-nickel-cobalt alloy material and can have a rectangular frame shape. The substrate 1 is a metal material such as iron, an iron alloy or copper, or a ceramic material such as A1N (i.e. aluminum nitride ₎ , SiC (i.e. silicon carbide) or _Si3N4 (i.e. silicon nitride), or any of these materials. It can be manufactured from a composition of a metal material and a ceramic material, and its shape can be designed to be flat or stepped with intermediate projections.

In step S1, first, after applying a silver-copper solder paste to the contact portion between the first body 5 and the substrate 1, the first body 5 and the substrate 1 are placed in a silver brazing furnace, and the temperature is set to 900. C. to 1000.degree. C. and a pressure of 10.sup. ^-9 Pa in a vacuum atmosphere for 1 to 2 hours, the first body 5 is brazed to the substrate 1 with a silver-copper solder paste. In this vacuum firing process, the silver-copper solder paste chemically reacts with impurities to reduce the gas generated, the gas escapes to form pores, and the joint between the first body 5 and the substrate 1, that is, the welding impairing the tightness of the

In step S<b>2 , the conductive member 3 is attached to the side surface of the first main body 5 .
In at least one embodiment of the present application, the conductive member 3 is made of, for example, a long rod-shaped iron-nickel-cobalt alloy material and functions as a pin of the laser semiconductor element 100 .

The specific process of step S2 is to coat one end of the conductive member 3 for connection with the first main body 5 with the first sealing material 4, and cover the one end of the conductive member 3 covered with the first sealing material 4 with , into the through holes 51 of the first main body 5 on opposite sides. This one end is exposed in the receiving cavity 8 and electrically connected to the laser and later to the laser crystal 2 . The other end of the conductive member 3 is located outside the first body 5 and electrically connected to an external circuit later.

After that, the conductive member 3, the first sealing material 4, and the first main body 5 are left in an air atmosphere at 900° C. to 1000° C. and baked for 3 to 4 hours, and the first sealing material 4 is melted and cooled. By waiting until then, the connecting portion between the conductive member 3 and the first main body 5 is sealed, and the conductive member 3 can be sealed and fixed to the first main body 5 .

In step S3, the laser crystal 2 is accommodated in the accommodation cavity 8, and the laser crystal 2 and the conductive member 3 are connected by wires.

The specific process of step S3 is as follows. First, the crystal particles 21 of the laser crystal 2 are placed on the surface of the substrate 1 in the accommodation cavity 8 as the light source. The reflecting members 22 of the laser crystal 2 are placed in the optical paths of the excitation light emitted by the corresponding crystal grains 21 . Accordingly, after each crystal grain 21 receives the excitation light, the excitation light appropriately enters the corresponding reflecting member 22 and is reflected. Then connect the line. When the number of laser crystals 2 on the substrate 1 is one, the crystal grains 21 of the laser crystals 2 and the conductive members 3 on both sides of the first body 5 are connected by wires.

When the number of laser crystals 2 on the substrate 1 is plural, the laser crystals 2 form a crystal array on the substrate 1 . The crystal grains 21 of the laser crystals 2 adjacent to each other in the same row are connected by wires, and the crystal grains 21 of the laser crystals 2 adjacent to the conductive member 3 are connected to the adjacent conductive member 3 by wires. .

In step S4, the lens 62 is attached to the attachment frame 61 to obtain the second main body 6. As shown in FIG.

In at least one embodiment of the present application, mounting frame 61 is made of an iron-nickel-cobalt alloy material.

The specific process of step S4 is as follows: after forming a groove 611 in the mounting frame 61, forming a watermark portion 612 in the groove 611, covering the edge of the lens 62 with a second sealing material 63, 2 The lens 62 coated with the sealing material 63 is accommodated in the groove 611 and exposed from the watermark portion 612 . Next, the lens 62, the second sealing material 63, and the mounting frame 61 are all baked in a vacuum atmosphere of 400° C. to 500° C. and 10 ⁻⁹ Pa for 1 hour to 2 hours, and the second sealing material 63 is melted. Only by waiting for cooling, the joint between the mounting frame 61 and the lens 62 is sealed, and the lens 62 is sealed and fixed within the mounting frame 61 .

In step S5, the second body 6 is attached to the first body 5 so as to cover the housing cavity 8, and the laser semiconductor device 100 is obtained.

In at least one embodiment of the present application, the edge of the mounting frame 61 and the first body 5 are connected by laser welding to secure the second body 6 to the first body 5 .

Moreover, in order to enhance the sealing effect, step S6 may be added after the above steps.

Specifically, above the second body 6 , the package layer 7 provided with the condensing part 71 is covered so that the lens 62 is positioned between the mounting frame 61 and the package layer 7 . Here, the condensing part 71 is separated from the mounting frame 61 . The package layer 7 is molded in advance, and the package layer 7 may be fixed to the second body 6 by an adhesive such as a UV adhesive during mounting. After mounting the package layer 7, the excitation light generated from each of the laser crystals 2 is transmitted through the lens 62 and then condensed by the corresponding condensing part 71, and the laser semiconductor element 100 after that is applied to the projection apparatus. can provide light of greater light intensity.

It should be noted that each of the above-described method embodiments is represented as a combination of a series of operations for the sake of simplicity of description, but those skilled in the art will appreciate that the present application is not limited to the order of operations in which the application is described. It should be understood that certain steps may adopt other sequences or be performed simultaneously.

The above-described embodiments are only used to describe the technical solution of the present application and are not intended to limit it. Although the present application has been described in detail with reference to the above-described embodiments, those skilled in the art may amend the technical solutions described in the above-described embodiments, or part of the technical features thereof. Equivalent replacement is possible. These amendments or replacements do not depart from the scope of the present invention from the essence of the corresponding invention.

REFERENCE SIGNS LIST 100 Laser semiconductor element 1 Substrate 2 Laser crystal 21 Crystal particle 22 Reflective member 3 Conductive member 4 First sealing material 5 First main body 51 Insertion hole 6 Second main body 61 Mounting frame 611 Groove 612 Watermark part 62 Lens 63 Second seal Stopper 7 Package layer 71 Condenser 8 Accommodating cavity

Claims (10)

A laser semiconductor device comprising a substrate, a laser crystal, a conductive member, a first body, and a second body,
the first body is provided on the substrate and jointly forms a receiving cavity with the substrate;
the laser crystal is housed within the housing cavity;
the conductive member is attached to the first body and electrically connected to the laser crystal;
the second body includes a mounting frame provided on the first body so as to cover the housing cavity, and a lens provided on the mounting frame,
A laser semiconductor device, wherein the first body, the conductive member and the mounting frame are all made of an iron-nickel-cobalt alloy. A first sealing material connects and seals between the conductive member and the first body, and a second sealing material connects and seals between the lens and the mounting frame. 2. The laser semiconductor device according to claim 1. 3. The laser semiconductor device according to claim 2, wherein both the first sealing material and the second sealing material are sealing resins. The mounting frame is fixed to the first body by laser welding,
The mounting frame is provided with a concave groove in which the lens is accommodated,
A watermark is provided on the groove bottom of the concave groove,
2. The laser semiconductor device according to claim 1, wherein said watermark portion is provided through said mounting frame, so that the excitation light of said laser crystal passes through said watermark portion and irradiates said lens. 2. The laser semiconductor device according to claim 1, wherein said first body, said conductive member and said mounting frame are all manufactured by a powder metallurgy method. the conductive members are provided in pairs and located on both sides of the first body, respectively;
if there is one laser crystal on the substrate, the laser crystal corresponds to a pair of the conductive members, the laser crystal is electrically connected to the conductive members on both sides of the first body;
when there are a plurality of laser crystals, the laser crystals constitute a crystal array on the substrate, and each row of the laser crystals corresponds to a pair of the conductive members;
The laser crystals adjacent to each other in the same column are electrically connected to each other, and the laser crystal adjacent to the conductive member is electrically connected to the adjacent conductive member. Item 1. The laser semiconductor device according to item 1. further comprising a package layer coated on the upper surface of the second body;
The package layer is provided with a condensing part, the condensing part is provided apart from the mounting frame,
7. The laser according to claim 6, wherein said condensing parts are present in the same number as said laser crystals on said substrate, and are installed in the optical path of the excitation light generated by said corresponding laser crystals. semiconductor device. A method for manufacturing a laser semiconductor device,
attaching to the surface of the substrate a first body which jointly defines a receiving cavity with the substrate and is made of an iron-nickel-cobalt alloy material;
attaching a conductive member made of an iron-nickel-cobalt alloy material to the first body;
housing a laser crystal in the housing cavity and electrically connecting the laser crystal and the conductive member;
obtaining a second body by mounting a lens on a mounting frame made of an iron-nickel-cobalt alloy material;
attaching the second body to the first body so as to cover the receiving cavity to further obtain the laser semiconductor element;
A method for manufacturing a laser semiconductor device, comprising: forming a groove in the mounting frame and forming a watermark in the groove;
9. The method of manufacturing a laser semiconductor device according to claim 8, further comprising: housing the lens in the concave groove while exposing the lens from the watermark portion. providing a package layer having a condensing part;
covering the second main body with the package layer such that the lens is positioned between the mounting frame and the package layer, and separating the condensing portion from the mounting frame;
9. The method of manufacturing a laser semiconductor device according to claim 8, further comprising:

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