CN115955209B - Crystal resonator and preparation method thereof - Google Patents
Crystal resonator and preparation method thereof Download PDFInfo
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- CN115955209B CN115955209B CN202211548565.4A CN202211548565A CN115955209B CN 115955209 B CN115955209 B CN 115955209B CN 202211548565 A CN202211548565 A CN 202211548565A CN 115955209 B CN115955209 B CN 115955209B
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- 239000013078 crystal Substances 0.000 title claims abstract description 93
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 238000004806 packaging method and process Methods 0.000 claims abstract description 125
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 34
- 230000008569 process Effects 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims description 163
- 239000002184 metal Substances 0.000 claims description 163
- 238000007747 plating Methods 0.000 claims description 44
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 23
- 239000010931 gold Substances 0.000 claims description 23
- 229910052737 gold Inorganic materials 0.000 claims description 23
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 19
- 230000010355 oscillation Effects 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 230000007704 transition Effects 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 4
- 230000006835 compression Effects 0.000 claims 1
- 238000007906 compression Methods 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 239000000853 adhesive Substances 0.000 abstract description 11
- 230000001070 adhesive effect Effects 0.000 abstract description 11
- 238000013461 design Methods 0.000 abstract description 7
- 238000003466 welding Methods 0.000 abstract description 4
- 239000010453 quartz Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052804 chromium Inorganic materials 0.000 description 9
- 239000011651 chromium Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000007731 hot pressing Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000009461 vacuum packaging Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- QUCZBHXJAUTYHE-UHFFFAOYSA-N gold Chemical compound [Au].[Au] QUCZBHXJAUTYHE-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
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Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention provides a crystal resonator and a preparation method thereof, wherein the crystal resonator comprises a packaging cover plate, a packaging bottom plate and a crystal plate arranged between the packaging cover plate and the packaging bottom plate, the crystal plate comprises a substrate and pin ends, the pin ends completely wrap the two ends of the substrate, the orthographic projection of the pin ends on the packaging cover plate is positioned outside the packaging cover plate, and the orthographic projection of the pin ends on the packaging bottom plate is positioned outside the packaging bottom plate; according to the crystal resonator provided by the invention, the fully-wrapped pin ends are formed at the two ends of the substrate, so that the design that the pin ends are arranged outside the base of the existing crystal resonator is avoided, meanwhile, a conductive adhesive is not required to be used for fixing a wafer, a corresponding adhesive dispensing process or a wheel welding process is omitted, and the overall dimension of the crystal resonator is reduced.
Description
Technical Field
The invention relates to the technical field of crystal resonators, in particular to a crystal resonator and a preparation method thereof.
Background
The crystal resonator is generally composed of a piezoelectric quartz wafer and a packaging shell, wherein the piezoelectric quartz wafer is rectangular or circular, and the packaging shell is made of ceramics, glass, metal and the like. The electrodes are evaporated on the upper and lower surfaces of the piezoelectric quartz wafer and fixed in the packaging shell by conductive adhesive, and the electrodes are connected with the base pins of the packaging shell through the lead wires of the sealed package. The alternating voltage is communicated with the upper electrode and the lower electrode of the quartz wafer through the pins, so that the quartz wafer generates a reverse piezoelectric effect, and oscillation is generated.
With the development of information technology, the frequency generation and frequency control quartz crystal devices in the communication field are developed to be small in size, high in frequency and high in stability. In order to meet the requirements of intelligent wearing application, however, the current quartz crystal device is mainly in a surface mount device form and mainly comprises a packaging upper cover, a kovar ring, a base and a wafer, wherein the overall dimension ranges from 1mm to 2mm, and the thickness ranges from 0.3mm to 0.7 mm. The device requires that the quartz wafer be below 1mm in size. In the course of miniaturization of crystal resonators, the above-described designs have failed to meet the demand for miniaturization. For example, in the conventional process, a quartz wafer needs to be fixed by using conductive adhesive, and the size of the conductive adhesive is difficult to improve to prevent miniaturization of the crystal resonator. In order to adapt to the application of higher integration, the external dimension needs to be further reduced, and the structural composition and the crystal manufacturing process need to be adjusted in a technological way.
Therefore, a crystal resonator and a method for manufacturing the same are needed to solve the above technical problems.
Disclosure of Invention
The invention aims to provide a crystal resonator and a preparation method thereof, which are used for solving the technical problem that the external dimension of the crystal resonator in the prior art is overlarge.
In order to solve the technical problems, the invention provides a crystal resonator, which comprises a packaging cover plate, a packaging bottom plate and a crystal plate arranged between the packaging cover plate and the packaging bottom plate;
the wafer comprises a substrate and pin ends, the pin ends completely wrap the two ends of the substrate, the orthographic projection of the pin ends on the packaging cover plate is positioned outside the packaging cover plate, and the orthographic projection of the pin ends on the packaging bottom plate is positioned outside the packaging bottom plate.
In the crystal resonator provided by the embodiment of the invention, the substrate is provided with the bonding pad part, the transition part and the oscillation part, the bonding pad part is connected with the oscillation part through the transition part, and the thickness of the oscillation part is smaller than that of the bonding pad part;
the oscillation part is provided with a first electrode and a second electrode, the first electrode is positioned between the packaging cover plate and the substrate, and the second electrode is positioned between the packaging bottom plate and the substrate.
In the crystal resonator provided by the embodiment of the invention, the pin end comprises a first pin arranged at one end of the bonding pad part and a second pin arranged at the other end of the bonding pad part; the bonding pad part is also provided with a first metal layer and a second metal layer, the first metal layer is positioned between the packaging cover plate and the substrate, and the second metal layer is positioned between the packaging bottom plate and the substrate;
wherein, the orthographic projection of the first metal layer on the second metal layer is overlapped with the second metal layer; the first pin is electrically connected with the first electrode through the first metal layer, and the second pin is electrically connected with the second electrode through the second metal layer.
In the crystal resonator provided by the embodiment of the invention, the first metal layer and the second metal layer are both arranged in the frame area of the bonding pad part, the first metal layer and part of the first pins form a first closed pattern, and the second metal layer and part of the second pins form a second closed pattern.
In the crystal resonator provided by the embodiment of the invention, the area, opposite to the pin end, of the packaging cover plate is provided with the third metal layer, and the area, opposite to the first metal layer, of the packaging cover plate is provided with the fourth metal layer; a fifth metal layer is arranged in the area, facing the pin end, of the packaging bottom plate, and a sixth metal layer is arranged in the area, facing the second metal layer, of the packaging bottom plate;
the orthographic projection of the third metal layer on the pin end is overlapped with the pin end, and the orthographic projection of the fourth metal layer on the first metal layer is overlapped with the first metal layer; the orthographic projection of the fifth metal layer on the pin end is overlapped with the pin end, and the orthographic projection of the sixth metal layer on the second metal layer is overlapped with the second metal layer.
In the crystal resonator provided by the embodiment of the invention, the thicknesses of the first metal layer, the second metal layer, the third metal layer, the fourth metal layer, the fifth metal layer and the sixth metal layer all comprise a chromium plating film layer and a gold plating film layer, the thickness range of the chromium plating film layer is between 10nm and 50nm, and the thickness range of the gold plating film layer is between 500nm and 1000 nm.
In the crystal resonator provided by the embodiment of the invention, the inside of the oscillation part is provided with the cavity, and one side wall of the cavity is a bonding pad part;
and an oscillation cavity is formed between the bonding pad part and the oscillation part, and the volume of the cavity is smaller than that of the oscillation cavity.
Correspondingly, the embodiment of the invention also provides a preparation method of the crystal resonator, which comprises the following steps:
providing a packaging cover plate and a packaging bottom plate;
providing a wafer, wherein the wafer comprises a substrate and pin ends, and the pin ends completely wrap the two ends of the substrate;
and sequentially aligning and attaching the packaging cover plate, the wafer and the packaging bottom plate, so that the orthographic projection of the pin end on the packaging cover plate is positioned outside the packaging cover plate, and the orthographic projection of the pin end on the packaging bottom plate is positioned outside the packaging bottom plate.
In the method for manufacturing a crystal resonator provided by the embodiment of the invention, the step of sequentially aligning and attaching the packaging cover plate, the wafer and the packaging bottom plate together further comprises:
depositing a third metal layer and a fourth metal layer on the same surface of the packaging cover plate;
depositing a fifth metal layer and a sixth metal layer on the same surface of the packaging bottom plate;
sequentially aligning and attaching the packaging cover plate, the wafer and the packaging bottom plate, wherein the orthographic projection of the third metal layer on the pin end is overlapped with the pin end, the orthographic projection of the fifth metal layer on the pin end is overlapped with the pin end, the orthographic projection of the fourth metal layer on the first metal layer in the wafer is overlapped with the first metal layer, and the orthographic projection of the sixth metal layer on the second metal layer in the wafer is overlapped with the second metal layer;
and integrating the packaging cover plate, the wafer and the packaging bottom plate into a whole through a hot-press bonding process.
In the crystal resonator provided by the embodiment of the invention, the process conditions of the thermocompression bonding process are as follows: true senseIn the empty environment, the reaction temperature is between 300 ℃ and 400 ℃, and the pressure of the reaction cavity is 500kg/cm 2 To 600kg/cm 2 The thermocompression bonding time is between 1 hour and 2 hours.
The beneficial effects of the invention are as follows: the invention provides a crystal resonator and a preparation method thereof, which are different from the prior art, and comprise a packaging cover plate, a packaging bottom plate and a wafer arranged between the packaging cover plate and the packaging bottom plate, wherein the wafer comprises a substrate and pin ends, the pin ends completely wrap the two ends of the substrate, the orthographic projection of the pin ends on the packaging cover plate is positioned outside the packaging cover plate, and the orthographic projection of the pin ends on the packaging bottom plate is positioned outside the packaging bottom plate; according to the crystal resonator provided by the invention, the fully-wrapped pin ends are formed at the two ends of the substrate, so that the design that the pin ends are arranged outside the base of the existing crystal resonator is avoided, meanwhile, a conductive adhesive is not required to be used for fixing a wafer, a corresponding adhesive dispensing process or wheel welding process is omitted, the overall dimension of the crystal resonator is reduced, in addition, as the orthographic projection of the pin ends on the packaging cover plate is positioned outside the packaging cover plate, and the orthographic projection of the pin ends on the packaging bottom plate is positioned on the packaging bottom plate, the packaging cover plate, the wafer and the packaging bottom plate are integrated, the overall dimension of the crystal resonator is further reduced, and the production of crystal resonator products with ultrahigh frequency and small dimensions can be further realized.
Drawings
FIG. 1 is an exploded schematic view of a crystal resonator according to an embodiment of the present invention;
FIG. 2A is a schematic front view of a first wafer structure in a crystal resonator according to an embodiment of the present invention;
FIG. 2B is a schematic diagram of the back side of the first wafer structure in the crystal resonator according to the embodiment of the present invention;
FIG. 3 is a schematic front view of a second wafer structure in a crystal resonator according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a package cover in a crystal resonator according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a package substrate in a crystal resonator according to an embodiment of the present invention;
FIG. 6 is a schematic cross-sectional view of a crystal resonator provided by an embodiment of the present invention;
FIG. 7 is a top view of a crystal resonator provided by an embodiment of the present invention;
fig. 8 is a flowchart of a method for manufacturing a crystal resonator according to an embodiment of the present invention.
Detailed Description
The technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, are intended to fall within the scope of the present invention.
Referring to fig. 1 to 7, the present invention provides a crystal resonator 100, which includes a package cover plate 10, a package bottom plate 30, and a wafer 20 disposed between the package cover plate 10 and the package bottom plate 30, wherein the wafer 20 includes a substrate 21 and a lead end 22, the lead end 22 completely wraps the two ends of the substrate 21, the orthographic projection of the lead end 22 on the package cover plate 10 is located outside the package cover plate 10, and the orthographic projection of the lead end 22 on the package bottom plate 30 is located outside the package bottom plate 30;
according to the crystal resonator 100 provided by the invention, the fully-wrapped pin ends 22 are formed at the two ends of the substrate 21, so that the design that the pin ends 22 are arranged outside the base of the existing crystal resonator 100 is avoided, meanwhile, the wafer 20 is not required to be fixed by adopting the conductive adhesive 27, the corresponding dispensing process or wheel welding process is omitted, the external dimension of the crystal resonator 100 is reduced, in addition, the front projection of the pin ends 22 on the packaging cover plate 10 is positioned outside the packaging cover plate 10, and the front projection of the pin ends 22 on the packaging bottom plate 30 is positioned on the packaging bottom plate 30, so that the packaging cover plate 10, the wafer 20 and the packaging bottom plate 30 are integrated, the external dimension of the crystal resonator 100 is further reduced, and the production of the crystal resonator 100 products with ultrahigh frequency and small dimensions can be further realized.
The technical solutions of the present application will now be described with reference to specific embodiments.
Referring to fig. 1, fig. 1 is an exploded view of a crystal resonator 100 according to an embodiment of the invention; the crystal resonator 100 includes a package cover 10, a package bottom 30, and a die 20 disposed between the package cover 10 and the package bottom 30, the die 20 includes a substrate 21 and a lead end 22, the lead end 22 completely wraps the two ends of the substrate 21, the orthographic projection of the lead end 22 on the package cover 10 is located outside the package cover 10, and the orthographic projection of the lead end 22 on the package bottom 30 is located outside the package bottom 30.
Referring to fig. 2A and 2B, fig. 2A is a schematic front view of a first wafer 20 in a crystal resonator 100 according to an embodiment of the invention; FIG. 2B is a schematic back view of the first wafer 20 structure in the crystal resonator 100 according to the embodiment of the present invention; the wafer 20 includes a substrate 21, a lead end 22, a first electrode 23 and a second electrode 25, the substrate 21 has a pad portion 201, a transition portion 203 and an oscillating portion 202, the pad portion 201 is connected with the oscillating portion 202 through the transition portion 203, and the thickness of the oscillating portion 202 is smaller than that of the pad portion 201. The thickness of the oscillation portion 202 is smaller than that of the pad portion 201 in order to provide a vibration space for the wafer 20.
Specifically, the oscillating portion 202 is provided with a first electrode 23 and a second electrode 25, the first electrode 23 is located between the package cover 10 and the substrate 21 (i.e. the first electrode 23 is disposed on the front surface of the substrate 21), and the second electrode 25 is located between the package base 30 and the substrate 21 (i.e. the second electrode 25 is disposed on the back surface of the substrate 21).
Specifically, the lead terminal 22 includes a first lead 221 provided at one end of the pad part 201 and a second lead 222 provided at the other end of the pad part 201; the pad part 201 is also provided with a first metal layer 24 and a second metal layer 26, the first metal layer 24 is positioned between the package cover plate 10 and the substrate 21, and the second metal layer 26 is positioned between the package bottom plate 30 and the substrate 21;
wherein, the front projection of the first metal layer 24 on the second metal layer 26 is coincident with the second metal layer 26 (i.e. the front structure of the wafer 20 is the same as the back structure); the first lead 221 is electrically connected to the first electrode 23 through the first metal layer 24, and the second lead 222 is electrically connected to the second electrode 25 through the second metal layer 26.
Further, the external ac voltage is connected to the first electrode 23 of the wafer 20 through the first pin 221 and connected to the second electrode 25 of the wafer 20 through the second pin 222, so that the wafer 20 generates a reverse piezoelectric effect, and thus the oscillation portion 202 of the wafer 20 oscillates.
In the embodiment of the invention, the first metal layer 24 and the second metal layer 26 are disposed in three frame regions of the pad portion 201, the first metal layer 24 and a portion of the first pins 221 form a first closed pattern, and the second metal layer 26 and a portion of the second pins 222 form a second closed pattern. Wherein, the first closed pattern and the second closed pattern are rectangular.
In the embodiment of the present invention, an oscillation cavity 204 is formed between the pad portion 201 and the oscillation portion 202, and the oscillation cavity 204 is used for providing a vibration space for the wafer 20.
Referring to fig. 3, fig. 3 is a schematic diagram illustrating a second structure of a wafer 20 in a crystal resonator 100 according to an embodiment of the invention; the crystal resonator 100 in fig. 3 is substantially the same as the crystal resonator 100 in fig. 2A, and the difference is that a cavity-avoiding portion 205 is disposed inside the oscillating portion 202, one side wall of the cavity-avoiding portion 205 is a pad portion 201, and a volume of the cavity-avoiding portion 205 is smaller than a volume of the oscillating portion 204.
Specifically, the purpose of the cavity 205 is to reduce the impact of the vibration on the entire crystal resonator 100 when the crystal resonator 100 vibrates, because the energy of the vibration is lost in the cavity 205.
In the embodiment of the invention, the structure of the package bottom plate 30 is the same as that of the package cover plate 10, so that the design can effectively reduce the working procedure and the production cost.
In an embodiment of the present invention, when the materials of the package bottom plate 30 and the package cover plate 10 are polymer temperature-resistant resin materials, the package cover plate 10, the wafer 20 and the package bottom plate 30 are aligned and bonded in sequence, and the package cover plate 10, the wafer 20 and the package bottom plate 30 are integrated by a heating and pressurizing process, so as to obtain the crystal resonator 100.
In another embodiment of the present invention, when the materials of the package bottom plate 30 and the package cover plate 10 are quartz, the package bottom plate 30, the wafer 20 and the package cover plate 10 are made of quartz, so that mass production can be effectively performed, the processing precision is high, and the performance of the product is improved.
Specifically, referring to fig. 4 and fig. 5, fig. 4 is a schematic structural diagram of a package cover plate 10 in a crystal resonator 100 according to an embodiment of the present invention, and fig. 5 is a schematic structural diagram of a package bottom plate 30 in a crystal resonator 100 according to an embodiment of the present invention; wherein, the area of the packaging cover plate 10 opposite to the pin end 22 is provided with a third metal layer 11, and the area of the packaging cover plate 10 opposite to the first metal layer 24 is provided with a fourth metal layer 12; a fifth metal layer 31 is arranged on the area, facing the pin end 22, of the packaging bottom plate 30, and a sixth metal layer 32 is arranged on the area, facing the second metal layer 26, of the packaging bottom plate 30;
wherein, the orthographic projection of the third metal layer 11 on the pin end 22 coincides with the pin end 22, and the orthographic projection of the fourth metal layer 12 on the first metal layer 24 coincides with the first metal layer 24; the orthographic projection of the fifth metal layer 31 onto the lead terminal 22 coincides with the lead terminal 22, and the orthographic projection of the sixth metal layer 32 onto the second metal layer 26 coincides with the second metal layer 26. That is, the pattern of the third metal layer 11 is the same as the pattern of the lead end 22 on the front surface of the wafer 20, and the pattern of the fourth metal layer 12 is the same as the pattern of the first metal layer 24 on the front surface of the wafer 20; the pattern of the fifth metal layer 31 is the same as the pattern of the lead terminals 22 on the front side of the wafer 20, and the pattern of the sixth metal layer 32 is the same as the pattern of the second metal layer 26 on the front side of the wafer 20.
Specifically, in the crystal resonator 100 provided in the embodiment of the present invention, the thicknesses of the first metal layer 24, the second metal layer 26, the third metal layer 11, the fourth metal layer 12, the fifth metal layer 31, and the sixth metal layer 32 each include a chrome plating film layer and a gold plating film layer, the thickness of the chrome plating film layer ranges from 10nm to 50nm, and the thickness of the gold plating film layer ranges from 500nm to 1000 nm. The first electrode 23, the second electrode 25, and the lead terminal 22 also include a chrome plating film layer and a gold plating film layer.
In one embodiment of the present invention, the thicknesses of the first metal layer 24 and the second metal layer 26 are the same, and the thicknesses of the third metal layer 11, the fourth metal layer 12, the fifth metal layer 31, and the sixth metal layer 32 are all the same; wherein the thickness of the third metal layer 11 is greater than the thickness of the first metal layer 24. The design is that the thicker the thickness of the gold-plating film layer is, the better the bonding effect is; in addition, the thickness of the electrode is not related to the package cover plate 10 and the package bottom plate 30, and the thickness of the gold plating film can be properly increased to obtain better bonding effect.
Referring to fig. 6 and 7, fig. 6 is a schematic cross-sectional view of a crystal resonator 100 (schematically shown mounted on a PCB) according to an embodiment of the present invention; FIG. 7 is a top view of a crystal resonator 100 provided by an embodiment of the present invention; wherein, in the direction from the package bottom plate 30 to the package cover plate 10 (first direction D1), the first metal layer 24 includes a chrome plating film layer and a gold plating film layer which are stacked from bottom to top, the second metal layer 26 includes a gold plating film layer and a chrome plating film layer which are stacked from bottom to top, the third metal layer 11 and the fourth metal layer 12 each include a gold plating film layer and a chrome plating film layer which are stacked from bottom to top, and the fifth metal layer 31 and the sixth metal layer 32 each include a gold plating film layer and a chrome plating film layer which are stacked from bottom to top.
Specifically, the gold-plated film layer in the third metal layer 11 is integrated with the lead end 22 through a thermocompression bonding process, and the gold-plated film layer in the fourth metal layer 12 is integrated with the first metal layer 24 through a thermocompression bonding process; the gold plating film layer in the fifth metal layer 31 is integrated with the lead terminal 22 by a thermocompression bonding process, and the gold plating film layer in the sixth metal layer 32 is integrated with the second metal layer 26 by a thermocompression bonding process.
In the embodiment of the present invention, when the crystal resonator 100 is mounted on the printed circuit board 28, the conductive adhesive 27 is disposed at two ends of the crystal resonator 100, and the lead terminals 22 are electrically connected to the printed circuit board 28 through the conductive adhesive 27.
In the embodiment of the present invention, four corners of the package cover 10 and four corners of the package base 30 are rounded.
Correspondingly, the invention also provides a preparation method of the crystal resonator 100; referring to fig. 8, fig. 8 is a flowchart illustrating a method for manufacturing a crystal resonator 100 according to an embodiment of the invention.
Specifically, referring to fig. 1 to 8, the preparation method of the crystal resonator 100 includes the following steps (taking the materials of the package bottom plate 30, the wafer 20 and the package cover plate 10 as examples) that:
s10, providing a package cover plate 10 and a package bottom plate 30.
Specifically, S10 further includes:
firstly, providing a package cover plate 10 and a package bottom plate 30; then, the package cover plate 10 and the package base plate 30 are preprocessed;
then, a chromium plating film layer and a gold plating film layer are sequentially sputtered on the lower surface of the packaging cover plate 10, and a chromium plating film layer and a gold plating film layer are sequentially sputtered on the upper surface of the packaging bottom plate 30;
finally, the chrome plating film layer and the gold plating film layer are etched by using a photolithography exposure technology, so that the patterned third metal layer 11 and the patterned fourth metal layer 12 are formed on the lower surface of the package cover plate 10, and the patterned fifth metal layer 31 and the patterned sixth metal layer 32 are formed on the upper surface of the package cover plate 10.
S20, providing a wafer 20, wherein the wafer 20 comprises a substrate 21 and pin ends 22, and the pin ends 22 completely wrap the two ends of the substrate 21.
Specifically, S20 further includes:
firstly, providing a substrate 21, wherein the substrate 21 is provided with a bonding pad part 201, a transition part 203 and an oscillating part 202, the bonding pad part 201 is connected with the oscillating part 202 through the transition part 203, and the thickness of the oscillating part 202 is smaller than that of the bonding pad part 201;
then, sequentially sputtering a chromium plating film and a gold plating film on the upper surface of the substrate 21, and simultaneously sequentially sputtering a chromium plating film and a gold plating film on the lower surface of the substrate 21;
finally, etching the chromium plating film layer and the gold plating film layer by adopting a photoetching exposure technology, so that a patterned first electrode 23 and a patterned first metal layer 24 are formed on the upper surface of the substrate 21, a patterned second electrode 25 and a patterned second metal layer 26 are formed on the lower surface of the substrate 21, and meanwhile, the two ends of the substrate 21 are formed into pin ends 22, and the pin ends 22 are in a full-wrapping form;
wherein, the pattern of the third metal layer 11 is the same as the pattern of the lead end 22 on the front surface of the wafer 20, and the pattern of the fourth metal layer 12 is the same as the pattern of the first metal layer 24 on the front surface of the wafer 20; the pattern of the fifth metal layer 31 is the same as the pattern of the lead terminals 22 on the front side of the wafer 20, and the pattern of the sixth metal layer 32 is the same as the pattern of the second metal layer 26 on the front side of the wafer 20.
S30, the packaging cover plate 10, the wafer 20 and the packaging bottom plate 30 are sequentially aligned and attached, so that orthographic projection of the pin end 22 on the packaging cover plate 10 is positioned outside the packaging cover plate 10, and orthographic projection of the pin end 22 on the packaging bottom plate 30 is positioned outside the packaging bottom plate 30.
Specifically, S30 further includes:
firstly, a plasma process is adopted to scan the lower surface of the packaging cover plate 10, the upper surface and the lower surface of the wafer 20 and the upper surface of the packaging bottom plate 30, so that the surface states of the chromium plating film layer and the gold plating film layer are improved, and the surface of the gold plating film layer obtains higher surface activation energy;
then, the packaging cover plate 10, the wafer 20 and the packaging bottom plate 30 are aligned in sequence in a vacuum reflow oven, certain pressure and temperature are selected according to the thickness and the area of the chromium plating film layer and the gold plating film layer, and then the steps of heating, boosting, cooling and depressurizing in the hot pressing process are reasonably regulated, and the packaging cover plate 10, the wafer 20 and the packaging bottom plate 30 are bonded together through hot pressing, so that the crystal resonator 100 is obtained, and the vacuum packaging requirement of the wafer-level crystal resonator 100 is realized;
wherein, two gold-plated film layers between the packaging cover plate 10 and the wafer 20 are bonded into one gold-plated film layer through hot pressing, and the bonded gold-plated film layer not only serves as a bonding sealing ring of the single crystal resonator 100, but also serves as a circuit led out by the first electrode 23 or the second electrode 25, other metal plating layers are not required to be added, and electrode circuits of the crystal resonator 100 are led out while vacuum packaging is realized, so that the problem of low packaging efficiency and high cost of the device-level resonator is solved.
Specifically, the process conditions of the hot-press bonding process adopted by the invention are as follows: in a vacuum environment, the reaction temperature ranges from 300 ℃ to 400 ℃, and the pressure of the reaction cavity ranges from 500kg/cm 2 To 600kg/cm 2 The thermocompression bonding time is between 1 hour and 2 hours.
Finally, after the wafer 20 is packaged, the lead terminals 22 are electrically connected to the printed circuit board 28 through the conductive paste 27, thereby obtaining the crystal resonator 100.
The crystal resonator 100 prepared by the invention is packaged by a hot-press bonding process, and the structure and the preparation method shorten the production process route of the product, improve the production efficiency and adapt to the development trend of miniaturization of the resonator.
Compared with the prior art, the crystal resonator 100 and the preparation method thereof provided by the invention have the following advantages:
the first packaging cover plate 10 and the packaging bottom plate 30 have the same structure, so that the working procedure and the production cost can be effectively reduced;
secondly, the two ends of the wafer 20 are provided with fully-wrapped pin ends 22, and pins do not need to be prepared on the packaging bottom plate 30, so that the packaged crystal resonator 100 has smaller external dimension;
thirdly, the packaging technology adopts a gold-gold hot-pressing bonding process, so that a better bonding effect can be realized, an electrode circuit is led out while vacuum packaging is realized, and the problem of low packaging efficiency and high cost is solved.
In summary, unlike the prior art, the present invention provides a crystal resonator 100 and a method for manufacturing the same, comprising a package cover 10, a package bottom 30, and a wafer 20 disposed between the package cover 10 and the package bottom 30, wherein the wafer 20 comprises a substrate 21 and a lead end 22, the lead end 22 completely wraps the two ends of the substrate 21, the orthographic projection of the lead end 22 on the package cover 10 is located outside the package cover 10, and the orthographic projection of the lead end 22 on the package bottom 30 is located outside the package bottom 30; according to the crystal resonator 100 provided by the invention, the fully-wrapped pin ends 22 are formed at the two ends of the substrate 21, so that the design that the pin ends 22 are arranged outside the base of the existing crystal resonator 100 is avoided, meanwhile, the wafer 20 is not required to be fixed by adopting the conductive adhesive 27, the corresponding dispensing process or wheel welding process is omitted, the external dimension of the crystal resonator 100 is reduced, and in addition, the front projection of the pin ends 22 on the packaging cover plate 10 is positioned outside the packaging cover plate 10, and the front projection of the pin ends 22 on the packaging bottom plate 30 is positioned outside the packaging bottom plate 30, so that the packaging cover plate 10, the wafer 20 and the packaging bottom plate 30 are integrated, the external dimension of the crystal resonator 100 is further reduced, and the production of the crystal resonator 100 product with ultrahigh frequency and small size can be further realized.
It should be noted that, the foregoing embodiments all belong to the same inventive concept, and the descriptions of the embodiments have emphasis, and where the descriptions of the individual embodiments are not exhaustive, reference may be made to the descriptions of the other embodiments. The foregoing examples merely illustrate embodiments of the invention and are described in more detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (7)
1. The crystal resonator is characterized by comprising a packaging cover plate, a packaging bottom plate and a wafer arranged between the packaging cover plate and the packaging bottom plate;
the chip comprises a substrate and pin ends, the pin ends completely wrap the two ends of the substrate, orthographic projection of the pin ends on the packaging cover plate is positioned outside the packaging cover plate, and orthographic projection of the pin ends on the packaging bottom plate is positioned outside the packaging bottom plate;
the substrate is provided with a bonding pad part, a transition part and an oscillating part, wherein the bonding pad part is connected with the oscillating part through the transition part, and the thickness of the oscillating part is smaller than that of the bonding pad part; the oscillation part is provided with a first electrode and a second electrode, the first electrode is positioned between the packaging cover plate and the substrate, and the second electrode is positioned between the packaging bottom plate and the substrate;
the pin end comprises a first pin arranged at one end of the bonding pad part and a second pin arranged at the other end of the bonding pad part; the bonding pad part is also provided with a first metal layer and a second metal layer, the first metal layer is positioned between the packaging cover plate and the substrate, and the second metal layer is positioned between the packaging bottom plate and the substrate; orthographic projection of the first metal layer on the second metal layer is overlapped with the second metal layer; the first pin is electrically connected with the first electrode through the first metal layer, and the second pin is electrically connected with the second electrode through the second metal layer.
2. The crystal resonator according to claim 1, wherein the first metal layer and the second metal layer are both disposed in a frame region of the pad portion, the first metal layer and a portion of the first pin form a first closed pattern, and the second metal layer and a portion of the second pin form a second closed pattern.
3. The crystal resonator according to claim 1, wherein a third metal layer is provided on a region of the package cover plate facing the pin terminal, and a fourth metal layer is provided on a region of the package cover plate facing the first metal layer; a fifth metal layer is arranged in the area, facing the pin end, of the packaging bottom plate, and a sixth metal layer is arranged in the area, facing the second metal layer, of the packaging bottom plate;
the orthographic projection of the third metal layer on the pin end is overlapped with the pin end, and the orthographic projection of the fourth metal layer on the first metal layer is overlapped with the first metal layer; and the orthographic projection of the fifth metal layer on the pin end is overlapped with the pin end, and the orthographic projection of the sixth metal layer on the second metal layer is overlapped with the second metal layer.
4. The crystal resonator according to claim 3, wherein the thicknesses of the first metal layer, the second metal layer, the third metal layer, the fourth metal layer, the fifth metal layer, and the sixth metal layer each comprise a chrome plating film and a gold plating film, the thickness of the chrome plating film ranges from 10nm to 50nm, and the thickness of the gold plating film ranges from 500nm to 1000 nm.
5. The crystal resonator according to claim 1, wherein a cavity is provided inside the oscillating portion, and one side wall of the cavity is the pad portion;
and an oscillation cavity is formed between the bonding pad part and the oscillation part, and the volume of the avoidance cavity is smaller than that of the oscillation cavity.
6. A method of manufacturing a crystal resonator, the method comprising:
providing a packaging cover plate and a packaging bottom plate;
providing a wafer, wherein the wafer comprises a substrate and pin ends, and the pin ends completely wrap the two ends of the substrate;
sequentially aligning and attaching the packaging cover plate, the wafer and the packaging bottom plate, so that orthographic projection of the pin end on the packaging cover plate is positioned outside the packaging cover plate, and orthographic projection of the pin end on the packaging bottom plate is positioned outside the packaging bottom plate;
wherein, the step of aligning and laminating the packaging cover plate, the wafer and the packaging bottom plate together in sequence further comprises:
depositing a third metal layer and a fourth metal layer on the same surface of the packaging cover plate;
depositing a fifth metal layer and a sixth metal layer on the same surface of the packaging bottom plate;
sequentially aligning and attaching the packaging cover plate, the wafer and the packaging bottom plate, wherein orthographic projection of the third metal layer on the pin end is overlapped with the pin end, orthographic projection of the fifth metal layer on the pin end is overlapped with the pin end, orthographic projection of the fourth metal layer on the first metal layer in the wafer is overlapped with the first metal layer, orthographic projection of the sixth metal layer on the second metal layer in the wafer is overlapped with the second metal layer;
and integrating the packaging cover plate, the wafer and the packaging bottom plate into a whole through a hot-press bonding process.
7. The method of manufacturing a crystal resonator according to claim 6, wherein the thermal compression bonding process has the following process conditions: in a vacuum environment, the reaction temperature ranges from 300 ℃ to 400 ℃, and the pressure of the reaction cavity ranges from 500kg/cm 2 To 600kg/cm 2 The thermocompression bonding time is between 1 hour and 2 hours.
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| JP2010074422A (en) * | 2008-09-17 | 2010-04-02 | Nippon Dempa Kogyo Co Ltd | Method for manufacturing crystal oscillation element, crystal oscillation element, crystal oscillator, and crystal controlled oscillator |
| JP2012090252A (en) * | 2010-09-22 | 2012-05-10 | Nippon Dempa Kogyo Co Ltd | Method for manufacturing piezoelectric device, and piezoelectric device |
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| JP2011091586A (en) * | 2009-10-21 | 2011-05-06 | Seiko Epson Corp | Piezoelectric vibrator, and electronic component |
| JP2012217111A (en) * | 2011-03-28 | 2012-11-08 | Nippon Dempa Kogyo Co Ltd | Piezoelectric device and manufacturing method of the same |
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