CN115955209A - Crystal resonator and preparation method thereof - Google Patents
Crystal resonator and preparation method thereof Download PDFInfo
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- CN115955209A CN115955209A CN202211548565.4A CN202211548565A CN115955209A CN 115955209 A CN115955209 A CN 115955209A CN 202211548565 A CN202211548565 A CN 202211548565A CN 115955209 A CN115955209 A CN 115955209A
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- 239000013078 crystal Substances 0.000 title claims abstract description 97
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 238000004806 packaging method and process Methods 0.000 claims abstract description 103
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 238000000034 method Methods 0.000 claims abstract description 37
- 230000008569 process Effects 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims description 160
- 239000002184 metal Substances 0.000 claims description 160
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 21
- 239000010931 gold Substances 0.000 claims description 21
- 229910052737 gold Inorganic materials 0.000 claims description 21
- 230000010355 oscillation Effects 0.000 claims description 19
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 230000007704 transition Effects 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims 1
- 239000000853 adhesive Substances 0.000 abstract description 7
- 230000001070 adhesive effect Effects 0.000 abstract description 7
- 238000013461 design Methods 0.000 abstract description 7
- 239000003292 glue Substances 0.000 abstract description 4
- 238000003466 welding Methods 0.000 abstract description 4
- 238000007747 plating Methods 0.000 description 37
- 229910052804 chromium Inorganic materials 0.000 description 16
- 239000011651 chromium Substances 0.000 description 16
- 239000010453 quartz Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 238000010586 diagram Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000007731 hot pressing Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000009461 vacuum packaging Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention provides a crystal resonator and a preparation method thereof, wherein the crystal resonator comprises a packaging cover plate, a packaging bottom plate and a wafer arranged between the packaging cover plate and the packaging bottom plate, the wafer comprises a substrate and pin ends, the pin ends completely wrap the two ends of the substrate, the orthographic projection of the pin ends on the packaging cover plate is positioned in the packaging cover plate, and the orthographic projection of the pin ends on the packaging bottom plate is positioned in the packaging bottom plate; the crystal resonator provided by the invention has the advantages that the pin ends which are completely wrapped are formed at the two ends of the substrate, the design that the pin ends are arranged outside the base of the existing crystal resonator is avoided, meanwhile, a wafer is not required to be fixed by adopting conductive adhesive, the corresponding glue dispensing process or wheel welding process is omitted, and the overall dimension of the crystal resonator is reduced.
Description
Technical Field
The invention relates to the technical field of crystal resonators, in particular to a crystal resonator and a preparation method thereof.
Background
The crystal resonator is generally composed of a piezoelectric quartz crystal wafer and a packaging shell, wherein the piezoelectric quartz crystal wafer is rectangular or circular, and the packaging shell is made of ceramics, glass, metal and the like. The electrodes are evaporated on the upper and lower surfaces of the piezoelectric quartz wafer and fixed in the packaging shell by conductive adhesive, and the electrodes are connected with the pins of the base of the packaging shell through the lead wires which are hermetically packaged. The alternating voltage is communicated with the upper electrode and the lower electrode of the quartz wafer through the pins, so that the quartz wafer generates an inverse piezoelectric effect, and oscillation is generated.
With the development of information technology, the quartz crystal devices for frequency generation and frequency control in the communication field are developed to be small in size, high in frequency and high in stability. In order to meet the requirements of intelligent wearing application, however, the mainstream of the current quartz crystal device is in a surface mounting device form, and the quartz crystal device mainly comprises an upper packaging cover, a kovar ring, a base and a wafer, wherein the overall external dimension range is between 1mm and 2mm, and the thickness range is between 0.3mm and 0.7 mm. The device requires that the size of the quartz wafer be below 1 mm. In the process of miniaturization of crystal resonators, the above design has not been able to meet the miniaturization requirements. For example, in the conventional process, a conductive adhesive is used to fix the quartz wafer and connect the electrode and the pin, and the size of the conductive adhesive is difficult to improve, which becomes a hindrance to miniaturization of the crystal resonator. To accommodate higher integration applications, further reductions in feature sizes are required, requiring technological adjustments to the structure composition and crystal processing.
Therefore, a crystal resonator and a method for fabricating the same are needed to solve the above-mentioned problems.
Disclosure of Invention
The invention aims to provide a crystal resonator and a preparation method thereof, which are used for solving the technical problem of overlarge external dimension of the crystal resonator in the prior art.
In order to solve the above technical problem, the present invention provides a crystal resonator, which includes a package cover plate, a package base plate, and a wafer disposed between the package cover plate and the package base plate;
the wafer comprises a substrate and pin ends, the pin ends completely wrap the two ends of the substrate, the orthographic projections of the pin ends on the packaging cover plate are positioned in the packaging cover plate, and the orthographic projections of the pin ends on the packaging bottom plate are positioned in the packaging bottom plate.
In the crystal resonator provided by the embodiment of the invention, the substrate is provided with the pad part, the transition part and the oscillation part, the pad part is connected with the oscillation part through the transition part, and the thickness of the oscillation part is smaller than that of the pad part;
the oscillating part is provided with a first electrode and a second electrode, the first electrode is positioned between the packaging cover plate and the substrate, and the second electrode is positioned between the packaging bottom plate and the substrate.
In the crystal resonator provided by the embodiment of the invention, the pin end comprises a first pin arranged at one end of the pad part and a second pin arranged at the other end of the pad part; the bonding pad part is also provided with a first metal layer and a second metal layer, the first metal layer is positioned between the packaging cover plate and the substrate, and the second metal layer is positioned between the packaging bottom plate and the substrate;
wherein, the orthographic projection of the first metal layer on the second metal layer is superposed with the second metal layer; the first pin is electrically connected with the first electrode through the first metal layer, and the second pin is electrically connected with the second electrode through the second metal layer.
In the crystal resonator provided by the embodiment of the invention, the first metal layer and the second metal layer are both arranged in the frame region of the pad part, the first metal layer and part of the first pins form a first closed pattern, and the second metal layer and part of the second pins form a second closed pattern.
In the crystal resonator provided by the embodiment of the invention, the region of the packaging cover plate, which is opposite to the pin end, is provided with the third metal layer, and the region of the packaging cover plate, which is opposite to the first metal layer, is provided with the fourth metal layer; a fifth metal layer is arranged in the region, opposite to the pin end, of the packaging bottom plate, and a sixth metal layer is arranged in the region, opposite to the second metal layer, of the packaging bottom plate;
wherein, the orthographic projection of the third metal layer on the pin end is superposed with the pin end, and the orthographic projection of the fourth metal layer on the first metal layer is superposed with the first metal layer; the orthographic projection of the fifth metal layer on the pin end is coincided with the pin end, and the orthographic projection of the sixth metal layer on the second metal layer is coincided with the second metal layer.
In the crystal resonator provided by the embodiment of the invention, the thicknesses of the first metal layer, the second metal layer, the third metal layer, the fourth metal layer, the fifth metal layer and the sixth metal layer all include a chromium plating film layer and a gold plating film layer, the thickness range of the chromium plating film layer is between 10nm and 50nm, and the thickness range of the gold plating film layer is between 500nm and 1000 nm.
In the crystal resonator provided by the embodiment of the invention, the oscillation part is internally provided with the cavity avoiding part, and one side wall of the cavity avoiding part is the pad part;
wherein, be formed with between pad portion and the portion of shaking and vibrate the chamber, keep away the volume of cavity and be less than the volume that vibrates the chamber.
Correspondingly, the embodiment of the invention also provides a preparation method of the crystal resonator, which comprises the following steps:
providing a packaging cover plate and a packaging bottom plate;
providing a wafer, wherein the wafer comprises a substrate and pin ends, and the pin ends completely wrap the two ends of the substrate;
the packaging cover plate, the wafer and the packaging bottom plate are aligned and attached in sequence, so that the orthographic projection of the pin end on the packaging cover plate is positioned in the packaging cover plate, and the orthographic projection of the pin end on the packaging bottom plate is positioned in the packaging bottom plate.
In the method for manufacturing a crystal resonator according to the embodiment of the present invention, the step of sequentially aligning and bonding the package cover plate, the wafer, and the package base plate further includes:
depositing a third metal layer and a fourth metal layer on the same surface of the packaging cover plate;
depositing a fifth metal layer and a sixth metal layer on the same surface of the packaging bottom plate;
aligning and attaching the packaging cover plate, the wafer and the packaging bottom plate in sequence, wherein the orthographic projection of the third metal layer on the pin end is superposed with the pin end, the orthographic projection of the fifth metal layer on the pin end is superposed with the pin end, the orthographic projection of the fourth metal layer on the first metal layer in the wafer is superposed with the first metal layer, and the orthographic projection of the sixth metal layer on the second metal layer in the wafer is superposed with the second metal layer;
the package cover plate, the wafer and the package base plate are combined into a whole through a hot-press bonding process.
In the crystal resonator provided by the embodiment of the invention, the process conditions of the hot-press bonding process are as follows: in a vacuum environment, the reaction temperature ranges from 300 to 400, and the pressure of the reaction cavity ranges from 500kg/cm 2 To 600kg/cm 2 Between 1 hour and 2 hours.
The invention has the beneficial effects that: the invention provides a crystal resonator and a preparation method thereof, which are different from the prior art, and the crystal resonator comprises a packaging cover plate, a packaging bottom plate and a wafer arranged between the packaging cover plate and the packaging bottom plate, wherein the wafer comprises a substrate and pin ends, the pin ends completely wrap the two ends of the substrate, the orthographic projection of the pin ends on the packaging cover plate is positioned in the packaging cover plate, and the orthographic projection of the pin ends on the packaging bottom plate is positioned in the packaging bottom plate; the crystal resonator provided by the invention has the advantages that the totally wrapped pin ends are formed at the two ends of the substrate, the design that the pin ends are arranged outside the base of the existing crystal resonator is avoided, meanwhile, a wafer is not required to be fixed by adopting conductive adhesive, the corresponding glue dispensing process or wheel welding process is omitted, the overall dimension of the crystal resonator is reduced, in addition, the orthographic projection of the pin ends on the packaging cover plate is positioned in the packaging cover plate, and the orthographic projection of the pin ends on the packaging bottom plate is positioned on the packaging bottom plate, so that the packaging cover plate, the wafer and the packaging bottom plate are combined into a whole, the overall dimension of the crystal resonator is further reduced, and the production of ultrahigh frequency and small size crystal resonator products can be further realized.
Drawings
FIG. 1 is an exploded view of a crystal resonator provided by an embodiment of the present invention;
FIG. 2A is a schematic diagram illustrating a front side view of a first wafer structure in a crystal resonator according to an embodiment of the invention;
FIG. 2B is a schematic diagram of a backside of a first wafer structure in a crystal resonator according to an embodiment of the invention;
FIG. 3 is a schematic diagram illustrating a front side of a second wafer structure in a crystal resonator in accordance with an embodiment of the invention;
FIG. 4 is a schematic structural diagram of a package cover plate in a crystal resonator according to an embodiment of the present invention;
FIG. 5 is a diagram illustrating a package substrate of a crystal resonator according to an embodiment of the present invention;
FIG. 6 is a cross-sectional schematic view of a crystal resonator provided by an embodiment of the invention;
FIG. 7 is a top view of a crystal resonator provided by an embodiment of the present invention;
fig. 8 is a flowchart of a method for manufacturing a crystal resonator according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art based on the embodiments of the present invention without any creative effort, fall within the protection scope of the present invention.
Referring to fig. 1 to 7, the present invention provides a crystal resonator 100, which includes a package cover plate 10, a package base plate 30, and a wafer 20 disposed between the package cover plate 10 and the package base plate 30, wherein the wafer 20 includes a substrate 21 and a lead end 22, the lead end 22 completely wraps two ends of the substrate 21, an orthographic projection of the lead end 22 on the package cover plate 10 is located in the package cover plate 10, and an orthographic projection of the lead end 22 on the package base plate 30 is located in the package base plate 30;
the crystal resonator 100 provided by the invention avoids the design that the pin ends 22 are arranged outside the base of the existing crystal resonator 100 by forming the fully-wrapped pin ends 22 at the two ends of the substrate 21, and simultaneously, the wafer 20 is not required to be fixed by adopting the conductive adhesive 27, so that the corresponding glue dispensing process or wheel welding process is omitted, the overall dimension of the crystal resonator 100 is reduced, in addition, because the orthographic projection of the pin ends 22 on the packaging cover plate 10 is positioned in the packaging cover plate 10, and the orthographic projection of the pin ends 22 on the packaging bottom plate 30 is positioned on the packaging bottom plate 30, the packaging cover plate 10, the wafer 20 and the packaging bottom plate 30 are combined into a whole, the overall dimension of the crystal resonator 100 is further reduced, and the production of ultrahigh frequency and small size crystal resonator 100 products can be further realized.
The technical solution of the present application will now be described with reference to specific embodiments.
Referring to fig. 1, fig. 1 is an exploded view of a crystal resonator 100 according to an embodiment of the invention; the crystal resonator 100 includes a package cover plate 10, a package base plate 30, and a wafer 20 disposed between the package cover plate 10 and the package base plate 30, where the wafer 20 includes a substrate 21 and a pin end 22, the pin end 22 completely wraps two ends of the substrate 21, an orthographic projection of the pin end 22 on the package cover plate 10 is located in the package cover plate 10, and an orthographic projection of the pin end 22 on the package base plate 30 is located in the package base plate 30.
Referring to fig. 2A and fig. 2B, fig. 2A is a schematic front view of a first chip 20 structure in a crystal resonator 100 according to an embodiment of the invention; FIG. 2B is a schematic diagram of the backside of the first wafer 20 structure in the crystal resonator 100 according to an embodiment of the invention; the wafer 20 includes a substrate 21, a pin terminal 22, a first electrode 23, and a second electrode 25, the substrate 21 has a pad portion 201, a transition portion 203, and an oscillation portion 202, the pad portion 201 is connected to the oscillation portion 202 through the transition portion 203, and a thickness of the oscillation portion 202 is smaller than a thickness of the pad portion 201. The thickness of the oscillating portion 202 is smaller than that of the pad portion 201 in order to provide a vibration space for the wafer 20.
Specifically, the oscillating portion 202 is disposed with a first electrode 23 and a second electrode 25, the first electrode 23 is disposed between the package cover 10 and the substrate 21 (i.e., the first electrode 23 is disposed on the front surface of the substrate 21), and the second electrode 25 is disposed between the package base 30 and the substrate 21 (i.e., the second electrode 25 is disposed on the back surface of the substrate 21).
Specifically, the lead terminal 22 includes a first lead 221 disposed at one end of the pad part 201 and a second lead 222 disposed at the other end of the pad part 201; the pad portion 201 is further provided with a first metal layer 24 and a second metal layer 26, the first metal layer 24 is located between the package cover plate 10 and the substrate 21, and the second metal layer 26 is located between the package base plate 30 and the substrate 21;
wherein, the orthographic projection of the first metal layer 24 on the second metal layer 26 is coincident with the second metal layer 26 (i.e. the front structure and the back structure of the wafer 20 are the same); the first lead 221 is electrically connected to the first electrode 23 through the first metal layer 24, and the second lead 222 is electrically connected to the second electrode 25 through the second metal layer 26.
Further, an external ac voltage is connected to the first electrode 23 of the wafer 20 through the first pin 221, and is connected to the second electrode 25 of the wafer 20 through the second pin 222, so that the wafer 20 generates an inverse piezoelectric effect, and thus the oscillation portion 202 of the wafer 20 generates an oscillation.
In the embodiment of the invention, the first metal layer 24 and the second metal layer 26 are disposed in three frame regions of the pad portion 201, the first metal layer 24 and a portion of the first leads 221 form a first closed pattern, and the second metal layer 26 and a portion of the second leads 222 form a second closed pattern. Wherein, the first closed pattern and the second closed pattern are both rectangular.
In the embodiment of the invention, an oscillation cavity 204 is formed between the pad portion 201 and the oscillation portion 202, and the oscillation cavity 204 is used for providing a vibration space for the wafer 20.
Referring to fig. 3, fig. 3 is a schematic diagram illustrating a second structure of a wafer 20 in a crystal resonator 100 according to an embodiment of the invention; the crystal resonator 100 in fig. 3 has substantially the same structure as the crystal resonator 100 in fig. 2A, except that a cavity avoiding portion 205 is disposed inside the oscillating portion 202, one sidewall of the cavity avoiding portion 205 is the pad portion 201, and a volume of the cavity avoiding portion 205 is smaller than a volume of the oscillating portion 204.
Specifically, cavity 205 is provided to reduce the impact on the crystal resonator 100 caused by the vibration of the wafer 20, since the energy of the vibration is lost in the cavity 205 when the crystal resonator 100 vibrates.
In the embodiment of the present invention, the structure of the package substrate 30 is the same as that of the package cover plate 10, so that the design can effectively reduce the process and production cost.
In an embodiment of the invention, when the materials of the package substrate 30 and the package substrate 10 are high molecular temperature-resistant resin materials, the package substrate 30, the chip 20 and the package substrate 10 are aligned and bonded in sequence, and the package substrate 30, the chip 20 and the package substrate 10 are integrated by a heating and pressurizing process to obtain the crystal resonator 100.
In another embodiment of the present invention, when the package substrate 30 and the package cover plate 10 are made of quartz, the package substrate 30, the wafer 20 and the package cover plate 10 are made of quartz, so that the mass production can be effectively performed, the processing precision is high, and the performance of the product is improved.
Specifically, referring to fig. 4 and fig. 5, fig. 4 is a schematic structural diagram of a package cover plate 10 in a crystal resonator 100 according to an embodiment of the present invention, and fig. 5 is a schematic structural diagram of a package base plate 30 in the crystal resonator 100 according to an embodiment of the present invention; a third metal layer 11 is arranged in the region of the package cover plate 10 opposite to the pin end 22, and a fourth metal layer 12 is arranged in the region of the package cover plate 10 opposite to the first metal layer 24; a fifth metal layer 31 is arranged in the region of the package base plate 30 opposite to the pin end 22, and a sixth metal layer 32 is arranged in the region of the package base plate 30 opposite to the second metal layer 26;
wherein, the orthographic projection of the third metal layer 11 on the pin end 22 is coincided with the pin end 22, and the orthographic projection of the fourth metal layer 12 on the first metal layer 24 is coincided with the first metal layer 24; the orthographic projection of the fifth metal layer 31 on the lead end 22 coincides with the lead end 22, and the orthographic projection of the sixth metal layer 32 on the second metal layer 26 coincides with the second metal layer 26. That is, the pattern of the third metal layer 11 is the same as the pattern of the lead terminal 22 on the front surface of the wafer 20, and the pattern of the fourth metal layer 12 is the same as the pattern of the first metal layer 24 on the front surface of the wafer 20; the pattern of the fifth metal layer 31 is the same as the pattern of the lead terminals 22 on the front side of the wafer 20, and the pattern of the sixth metal layer 32 is the same as the pattern of the second metal layer 26 on the front side of the wafer 20.
Specifically, in the crystal resonator 100 provided in the embodiment of the present invention, the thicknesses of the first metal layer 24, the second metal layer 26, the third metal layer 11, the fourth metal layer 12, the fifth metal layer 31, and the sixth metal layer 32 each include a chromium plating film layer and a gold plating film layer, the thickness of the chromium plating film layer ranges from 10nm to 50nm, and the thickness of the gold plating film layer ranges from 500nm to 1000 nm. The first electrode 23, the second electrode 25 and the lead terminal 22 also include a chrome plating film layer and a gold plating film layer.
In one embodiment of the present invention, the thicknesses of the first metal layer 24 and the second metal layer 26 are the same, and the thicknesses of the third metal layer 11, the fourth metal layer 12, the fifth metal layer 31 and the sixth metal layer 32 are all the same; wherein the thickness of the third metal layer 11 is greater than the thickness of the first metal layer 24. The design is that the thicker the thickness of the gold-plated film layer is, the better the bonding effect is; in addition, the package cover plate 10 and the package base plate 30 do not relate to the thickness of the electrode, and the thickness of the gold plating film layer can be properly increased to obtain a better bonding effect.
Referring to fig. 6 and 7, fig. 6 is a schematic cross-sectional view (schematic view on a PCB) of a crystal resonator 100 according to an embodiment of the present invention; FIG. 7 is a top view of a crystal resonator 100 provided by an embodiment of the present invention; in a direction from the package base plate 30 to the package cover plate 10 (a first direction D1), the first metal layer 24 includes a chromium plating film layer and a gold plating film layer stacked from bottom to top, the second metal layer 26 includes a gold plating film layer and a chromium plating film layer stacked from bottom to top, the third metal layer 11 and the fourth metal layer 12 include a gold plating film layer and a chromium plating film layer stacked from bottom to top, and the fifth metal layer 31 and the sixth metal layer 32 include a gold plating film layer and a chromium plating film layer stacked from bottom to top.
Specifically, the gold-plated film layer in the third metal layer 11 is integrated with the lead terminal 22 by a thermocompression bonding process, and the gold-plated film layer in the fourth metal layer 12 is integrated with the first metal layer 24 by a thermocompression bonding process; the gold-plated film layer of the fifth metal layer 31 is integrated with the lead terminal 22 by a thermocompression bonding process, and the gold-plated film layer of the sixth metal layer 32 is integrated with the second metal layer 26 by a thermocompression bonding process.
In the embodiment of the present invention, when the crystal resonator 100 is mounted on the printed circuit board 28, the conductive paste 27 is disposed at both ends of the crystal resonator 100, and the lead terminals 22 are electrically connected to the printed circuit board 28 through the conductive paste 27.
In the embodiment of the present invention, four corners of the package cover plate 10 and four corners of the package base plate 30 are rounded.
Correspondingly, the invention also provides a preparation method of the crystal resonator 100; referring to fig. 8, fig. 8 is a flowchart illustrating a method for manufacturing the crystal resonator 100 according to an embodiment of the invention.
Specifically, referring to fig. 1 to 8, the manufacturing method of the crystal resonator 100 is as follows (taking the materials of the package substrate 30, the chip 20 and the package cover plate 10 as quartz as an example):
s10, a package cover 10 and a package base 30 are provided.
Specifically, S10 further includes:
firstly, providing a package cover plate 10 and a package base plate 30; then, the package cover plate 10 and the package base plate 30 are preprocessed;
then, sequentially sputtering a chromium plating film layer and a gold plating film layer on the lower surface of the packaging cover plate 10, and sequentially sputtering a chromium plating film layer and a gold plating film layer on the upper surface of the packaging bottom plate 30;
finally, etching the chromium plating film layer and the gold plating film layer by using a photolithography exposure technique, so as to form a patterned third metal layer 11 and a patterned fourth metal layer 12 on the lower surface of the package cover plate 10, and simultaneously form a patterned fifth metal layer 31 and a patterned sixth metal layer 32 on the upper surface of the package cover plate 10.
S20, providing a chip 20, where the chip 20 includes a substrate 21 and a pin end 22, and the pin end 22 completely wraps two ends of the substrate 21.
Specifically, S20 further includes:
firstly, providing a substrate 21, wherein the substrate 21 is provided with a pad part 201, a transition part 203 and an oscillation part 202, the pad part 201 is connected with the oscillation part 202 through the transition part 203, and the thickness of the oscillation part 202 is smaller than that of the pad part 201;
then, sequentially sputtering a chromium plating film layer and a gold plating film layer on the upper surface of the substrate 21, and simultaneously sequentially sputtering the chromium plating film layer and the gold plating film layer on the lower surface of the substrate 21;
finally, etching the chromium plating film layer and the gold plating film layer by adopting a photoetching exposure technology, so that a patterned first electrode 23 and a patterned first metal layer 24 are formed on the upper surface of the substrate 21, a patterned second electrode 25 and a patterned second metal layer 26 are formed on the lower surface of the substrate 21, pin ends 22 are formed at two ends of the substrate 21, and the pin ends 22 are in a full wrapping form;
the pattern of the third metal layer 11 is the same as the pattern of the pin end 22 on the front surface of the wafer 20, and the pattern of the fourth metal layer 12 is the same as the pattern of the first metal layer 24 on the front surface of the wafer 20; the pattern of the fifth metal layer 31 is the same as the pattern of the lead terminals 22 on the front side of the wafer 20, and the pattern of the sixth metal layer 32 is the same as the pattern of the second metal layer 26 on the front side of the wafer 20.
S30, aligning and bonding the package cover 10, the chip 20 and the package base 30 in sequence, so that the orthographic projection of the lead end 22 on the package cover 10 is located in the package cover 10, and the orthographic projection of the lead end 22 on the package base 30 is located in the package base 30.
Specifically, S30 further includes:
firstly, scanning the lower surface of the packaging cover plate 10, the upper surface and the lower surface of the wafer 20 and the upper surface of the packaging bottom plate 30 by adopting a plasma process, improving the surface states of the chromium plating film layer and the gold plating film layer, and enabling the surface of the gold plating film layer to obtain higher surface activation energy;
then, aligning the packaging cover plate 10, the wafer 20 and the packaging bottom plate 30 in sequence in a vacuum reflow furnace, selecting certain pressure and temperature according to the thickness and area of the chromium plating film layer and the gold plating film layer, then reasonably adjusting the steps of heating, boosting, cooling and depressurizing in the hot-pressing process, and bonding the packaging cover plate 10, the wafer 20 and the packaging bottom plate 30 together through hot pressing to obtain the crystal resonator 100 of the invention, so as to realize the vacuum packaging requirement of the wafer-level crystal resonator 100;
two gold-plated film layers between the package cover plate 10 and the wafer 20 are combined into one gold-plated film layer through hot-press bonding, the bonded gold-plated film layer serves as a bonding sealing ring of a single crystal resonator 100 and also serves as a line led out by the first electrode 23 or the second electrode 25, other metal plating layers are not needed to be added, the electrode line of the crystal resonator 100 is led out while vacuum package is achieved, and the problem that the device-level resonator is low in package efficiency and high in cost is solved.
Specifically, the process conditions of the thermal compression bonding process adopted by the invention are as follows: in a vacuum environment, the reaction temperature ranges from 300 to 400, and the pressure of the reaction cavity ranges from 500kg/cm 2 To 600kg/cm 2 Between 1 hour and 2 hours.
Finally, after the chip 20 is packaged, the lead terminals 22 are electrically connected to the printed circuit board 28 through the conductive paste 27, thereby obtaining the crystal resonator 100.
The crystal resonator 100 prepared by the invention is packaged by a hot-pressing bonding process, and the structure and the preparation method shorten the production process route of products, improve the production efficiency and adapt to the development trend of miniaturization of resonators.
Compared with the prior art, the crystal resonator 100 and the preparation method thereof provided by the invention have the following advantages:
firstly, the structure of the packaging cover plate 10 is the same as that of the packaging bottom plate 30, so that the working procedure and the production cost can be effectively reduced;
secondly, the two ends of the wafer 20 are provided with the fully-wrapped pin ends 22, and pins do not need to be prepared on the packaging bottom plate 30, so that the external dimension of the packaged crystal resonator 100 is smaller;
and thirdly, the packaging technology adopts a gold hot-press bonding process, so that a good bonding effect can be realized, the electrode circuit is led out while vacuum packaging is realized, and the problems of low packaging efficiency and high cost are solved.
In summary, different from the situations in the prior art, the present invention provides a crystal resonator 100 and a method for manufacturing the same, including a package cover plate 10, a package base plate 30, and a wafer 20 disposed between the package cover plate 10 and the package base plate 30, wherein the wafer 20 includes a substrate 21 and a lead end 22, the lead end 22 completely wraps two ends of the substrate 21, an orthographic projection of the lead end 22 on the package cover plate 10 is located in the package cover plate 10, and an orthographic projection of the lead end 22 on the package base plate 30 is located in the package base plate 30; the crystal resonator 100 provided by the invention avoids the design that the pin ends 22 are arranged outside the base of the existing crystal resonator 100 by forming the fully-wrapped pin ends 22 at the two ends of the substrate 21, and simultaneously, the wafer 20 is not required to be fixed by adopting the conductive adhesive 27, so that the corresponding glue dispensing process or wheel welding process is omitted, the overall dimension of the crystal resonator 100 is reduced, in addition, because the orthographic projection of the pin ends 22 on the packaging cover plate 10 is positioned in the packaging cover plate 10, and the orthographic projection of the pin ends 22 on the packaging bottom plate 30 is positioned on the packaging bottom plate 30, the packaging cover plate 10, the wafer 20 and the packaging bottom plate 30 are combined into a whole, the overall dimension of the crystal resonator 100 is further reduced, and the production of ultrahigh frequency and small size crystal resonator 100 products can be further realized.
It should be noted that the above embodiments belong to the same inventive concept, and the description of each embodiment has a different emphasis, and reference may be made to the description in other embodiments where the description in individual embodiments is not detailed. The above examples only show the embodiments of the present invention, and the description thereof is specific and detailed, but not construed as limiting the scope of the invention. It should be noted that various changes and modifications can be made by those skilled in the art without departing from the spirit of the invention, and these changes and modifications are all within the scope of the invention. Therefore, the protection scope of the present patent should be subject to the appended claims.
Claims (10)
1. A crystal resonator is characterized by comprising a packaging cover plate, a packaging bottom plate and a wafer arranged between the packaging cover plate and the packaging bottom plate;
the wafer comprises a substrate and pin ends, the pin ends completely wrap two ends of the substrate, the orthographic projections of the pin ends on the packaging cover plate are located in the packaging cover plate, and the orthographic projections of the pin ends on the packaging bottom plate are located in the packaging bottom plate.
2. The crystal resonator according to claim 1, wherein the substrate has a pad portion, a transition portion, and an oscillation portion, the pad portion is connected to the oscillation portion through the transition portion, and the oscillation portion has a thickness smaller than that of the pad portion;
the oscillating part is provided with a first electrode and a second electrode, the first electrode is positioned between the packaging cover plate and the substrate, and the second electrode is positioned between the packaging bottom plate and the substrate.
3. The crystal resonator according to claim 2, wherein the pin terminals include a first pin provided at one end of the pad portion and a second pin provided at the other end of the pad portion; the bonding pad part is also provided with a first metal layer and a second metal layer, the first metal layer is positioned between the packaging cover plate and the substrate, and the second metal layer is positioned between the packaging bottom plate and the substrate;
wherein an orthographic projection of the first metal layer on the second metal layer is coincident with the second metal layer; the first pin is electrically connected with the first electrode through the first metal layer, and the second pin is electrically connected with the second electrode through the second metal layer.
4. The crystal resonator of claim 3, wherein the first metal layer and the second metal layer are disposed in a frame region of the pad portion, the first metal layer and a portion of the first lead form a first closed pattern, and the second metal layer and a portion of the second lead form a second closed pattern.
5. The crystal resonator of claim 3, wherein a region of the package cover plate opposite the lead end is provided with a third metal layer, and a region of the package cover plate opposite the first metal layer is provided with a fourth metal layer; a fifth metal layer is arranged in the area of the packaging bottom plate, which is opposite to the pin end, and a sixth metal layer is arranged in the area of the packaging bottom plate, which is opposite to the second metal layer;
wherein an orthographic projection of the third metal layer on the pin end coincides with the pin end, and an orthographic projection of the fourth metal layer on the first metal layer coincides with the first metal layer; the fifth metal layer is arranged on the pin end, the orthographic projection of the sixth metal layer on the second metal layer is coincided with the pin end, and the orthographic projection of the sixth metal layer on the second metal layer is coincided with the second metal layer.
6. The crystal resonator of claim 5, wherein the thicknesses of the first, second, third, fourth, fifth, and sixth metal layers each comprise a chrome plated film layer having a thickness ranging from 10nm to 50nm and a gold plated film layer having a thickness ranging from 500nm to 1000 nm.
7. The crystal resonator according to claim 2, wherein a cavity avoiding portion is provided inside the oscillating portion, and one sidewall of the cavity avoiding portion is the pad portion;
wherein, it vibrates the chamber to be formed with between pad portion with vibrate the portion, keep away the volume of cavity and be less than vibrate the volume in chamber.
8. A method of manufacturing a crystal resonator, the method comprising:
providing a packaging cover plate and a packaging bottom plate;
providing a wafer, wherein the wafer comprises a substrate and pin ends, and the pin ends completely wrap two ends of the substrate;
and aligning and laminating the packaging cover plate, the wafer and the packaging bottom plate in sequence to ensure that the orthographic projection of the pin end on the packaging cover plate is positioned in the packaging cover plate, and the orthographic projection of the pin end on the packaging bottom plate is positioned in the packaging bottom plate.
9. The method for manufacturing a crystal resonator according to claim 8, wherein the step of sequentially aligning and bonding the package cover plate, the wafer and the package base plate together further comprises:
depositing a third metal layer and a fourth metal layer on the same surface of the packaging cover plate;
depositing a fifth metal layer and a sixth metal layer on the same surface of the packaging bottom plate;
aligning and bonding the packaging cover plate, the wafer and the packaging bottom plate in sequence, wherein an orthographic projection of the third metal layer on the pin end is superposed with the pin end, an orthographic projection of the fifth metal layer on the pin end is superposed with the pin end, an orthographic projection of the fourth metal layer on the first metal layer in the wafer is superposed with the first metal layer, and an orthographic projection of the sixth metal layer on the second metal layer in the wafer is superposed with the second metal layer;
and combining the packaging cover plate, the wafer and the packaging bottom plate into a whole through a hot-press bonding process.
10. The method for manufacturing the crystal resonator according to claim 9, wherein the thermocompression bonding process has the process conditions: in a vacuum environment, the reaction temperature ranges from 300 to 400, and the pressure of the reaction cavity ranges from 500kg/cm 2 To 600kg/cm 2 And the thermocompression bonding time is between 1 hour and 2 hours.
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